CN105448886B - capacitor and preparation method - Google Patents
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- CN105448886B CN105448886B CN201410384052.3A CN201410384052A CN105448886B CN 105448886 B CN105448886 B CN 105448886B CN 201410384052 A CN201410384052 A CN 201410384052A CN 105448886 B CN105448886 B CN 105448886B
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Abstract
Present invention is disclosed a kind of capacitors, including the first electrode stacked gradually, layered dielectric and second electrode, wherein, the layered dielectric includes at least one the first dielectric film with first refractive index and at least one second dielectric film with the second refractive index, and the first refractive index is less than second refractive index.The present invention also provides the preparation methods of the capacitor.In the capacitor of the present invention and preparation method, first dielectric film can improve the breakdown voltage of the layered dielectric, second dielectric film can improve the time breakdown of the layered dielectric, so that the layered dielectric meets the requirement of breakdown voltage and time breakdown simultaneously.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of capacitor and preparation method.
Background technology
Capacitor is the common passive element in super large-scale integration, includes mainly that polycrystalline silicon-on-insulator-is more
Crystal silicon (PIP, Polysilicon-Insulator-Polysilicon), metal-insulator-silicon (MIS, Metal-
) and metal-insulator-metal type (MIM, Metal-Insulator-Metal) etc. Insulator-Silicon.Wherein, due to
MIM capacitor interferes minimum caused by transistor, and can provide the preferable linearity (Linearity) and symmetry
(Symmetry), therefore obtained more being widely applied, especially mixed signal (Mixed-signal) and radio frequency (RF,
Radio Frequency) field.
In the capacitor, insulator generally uses the dielectric substances such as silica or silicon nitride to be made.With product electricity
Appearance density is increasing, and the thickness of insulator must be very small, but if only uses silica as insulator, MIM capacitor
The breakdown voltage of device can drastically decline, and cannot meet the requirement of product.Therefore, it in the MIM capacitor of small size, often uses
Insulator of the higher silicon nitride of dielectric constant as MIM capacitor, to improve capacitor density.
In the prior art, when using insulator of the silicon nitride as MIM capacitor, relatively large thickness can be kept
And breakdown voltage.However, with insulator thickness it is thinning, the breakdown voltage and time breakdown of MIM capacitor (TDDB,
Time dependent dielectric breakdown, also known as with time correlation dielectric breakdown) tend not to meet simultaneously
It is required that so that the electrical property of MIM capacitor is not up to standard.
Invention content
The object of the present invention is to provide a kind of capacitor and preparation method, can meet simultaneously breakdown voltage and
The requirement of time breakdown.
In order to solve the above technical problems, the present invention provides a kind of capacitor, including stack gradually first electrode, stacking electricity
Medium and second electrode, wherein the layered dielectric includes at least one the first dielectric film with first refractive index
With at least one second dielectric film with the second refractive index, the first refractive index is less than second refractive index.
Optionally, in the capacitor, the layered dielectric includes first dielectric film and an institute
The second dielectric film is stated, first dielectric film is close to first electrode or second electrode.
Optionally, in the capacitor, the layered dielectric includes two first dielectric films and an institute
The second dielectric film is stated, second dielectric film is located between two first dielectric films.
Optionally, in the capacitor, the layered dielectric includes 2 or 2 the first dielectrics of the above
Film and 2 or 2 the second dielectric films of the above, first dielectric film and second dielectric film are spaced successively
It is stacked.
Optionally, in the capacitor, the layered dielectric is including described in first dielectric film, one
Second dielectric film and a third dielectric film, the third dielectric film have third reflect rate, the third
Refractive index is less than second refractive index, and first dielectric film, the second dielectric film and third dielectric film stack gradually
It is set between the first electrode and second electrode.
Optionally, in the capacitor, the material of the third dielectric film is silicon nitride.
Optionally, in the capacitor, the material of the first electrode and second electrode is metal.
Optionally, in the capacitor, the material of first dielectric film and second dielectric film is nitrogen
SiClx.
Optionally, in the capacitor, the first refractive index is less than 1.93.
Optionally, in the capacitor, second refractive index is more than or equal to 1.93.
Another side according to the present invention also provides a kind of preparation method of capacitor, including：
One first electrode is provided；
A layered dielectric is formed on the first electrode, wherein the layered dielectric, which includes at least one, to be had
First dielectric film of first refractive index and second dielectric film with the second refractive index, the first refractive index are less than
Second refractive index；And
A second electrode is formed on the layered dielectric.
Optionally, in the preparation method of the capacitor, the layered dielectric includes first dielectric
Film and second dielectric film, first dielectric film is close to first electrode or second electrode.
Optionally, in the preparation method of the capacitor, the layered dielectric includes two first dielectrics
Film and second dielectric film, second dielectric film are located between two first dielectric films.
Optionally, in the preparation method of the capacitor, the layered dielectric includes 2 or 2 the above
First dielectric film and 2 or 2 the second dielectric films of the above, first dielectric film and second dielectric
Film is spaced is stacked successively.
Optionally, in the preparation method of the capacitor, the layered dielectric includes first dielectric
Film, second dielectric film and a third dielectric film, the third dielectric film have third reflect
Rate, the third reflect rate are less than second refractive index, first dielectric film, the second dielectric film and third dielectric
Film is cascadingly set between the first electrode and second electrode.
Optionally, in the preparation method of the capacitor, the material of the third dielectric film is silicon nitride.
Optionally, in the preparation method of the capacitor, the third is prepared using the first chemical vapor deposition method
Dielectric film, the reaction source of first chemical vapor deposition method include the first silicon source and the first nitrogen source, the first silicon source and the
The gas flow ratio of one nitrogen source is 0.5:1~1.5:1.
Optionally, in the preparation method of the capacitor, first silicon source is silane, and first nitrogen source is ammonia
Gas.
Optionally, in the preparation method of the capacitor, first dielectric film and second dielectric film
Material is silicon nitride.
Optionally, in the preparation method of the capacitor, described first is prepared using the second chemical vapor deposition method
Dielectric film, the reaction source of second chemical vapor deposition method include the second silicon source and the second nitrogen source, the second silicon source and the
The gas flow ratio of two nitrogen sources is 0.5:1~1.5:1.
Optionally, in the preparation method of the capacitor, second silicon source is silane, and second nitrogen source is ammonia
Gas.
Optionally, in the preparation method of the capacitor, described second is prepared using third chemical vapor deposition method
Dielectric film, the reaction source of the third chemical vapor deposition method include third silicon source and third nitrogen source, third silicon source and the
The gas flow ratio of three nitrogen sources is 2:1~4:1.
Optionally, in the preparation method of the capacitor, the third silicon source is silane, and the third nitrogen source is ammonia
Gas.
Optionally, in the preparation method of the capacitor, the first refractive index is less than 1.93.
Optionally, in the preparation method of the capacitor, second refractive index is more than or equal to 1.93.
Compared with prior art, in capacitor provided by the invention and preparation method, the layered dielectric is set to
Between first electrode and second electrode, wherein the layered dielectric includes at least first electricity with first refractive index
Deielectric-coating and second dielectric film with the second refractive index, the first refractive index are less than second refractive index, institute
The breakdown voltage of the layered dielectric can be improved by stating the first dielectric film, and second dielectric film can improve the layer
Dielectric time breakdown is folded, so that the layered dielectric meets the requirement of breakdown voltage and time breakdown simultaneously.
Description of the drawings
Fig. 1 is the flow chart of the preparation method of capacitor in one embodiment of the invention；
Fig. 2 to Fig. 5 is the schematic diagram of device architecture of the capacitor in preparation process in first embodiment of the invention；
Fig. 6 is the schematic diagram of capacitor in second embodiment of the invention；
Fig. 7 is the schematic diagram of capacitor in third embodiment of the invention；
Fig. 8 is the schematic diagram of capacitor in fourth embodiment of the invention.
Specific implementation mode
There is the defect for the requirement that can meet breakdown voltage and time breakdown simultaneously in the MIM capacitor of the prior art.Hair
A person of good sense carries out further investigation discovery to MIM capacitor, for film layer prepared by dielectric substance, especially silicon nitride material system
Standby film layer, the refractive index (RI) of film layer directly affect the breakdown voltage and time breakdown of film layer：When the refractive index of film layer
When higher, breakdown voltage is lower, while the time of time breakdown is longer.Inventor further study show that, if by MIM capacitor
The insulating layer of device is arranged to the dielectric of stacking so that insulating layer with multiple film layers with different refractivity, including
The film layer of film layer with a high refractive index and low-refraction, the film layer of high refractive index is used for improving the time of time breakdown, low
The film layer of refractive index be used for improve breakdown voltage so that layered dielectric simultaneously meet breakdown voltage and through when hit
The requirement worn.
According to the studies above, inventor proposes the present invention.Below in conjunction with schematic diagram to the capacitor and system of the present invention
Preparation Method is described in more detail, and which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can
To change invention described herein, and still realize the advantageous effects of the present invention.Therefore, following description should be understood as pair
In the widely known of those skilled in the art, and it is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail well known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to related system or related business
Limitation, another embodiment is changed by one embodiment.Additionally, it should think that this development may be complicated and expend
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example with reference to attached drawing in the following passage.It is wanted according to following explanation and right
Ask book, advantages and features of the invention that will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Core of the invention thought is a kind of capacitor, including stack gradually first electrode, layered dielectric and
Second electrode, wherein the layered dielectric includes at least first dielectric film and a tool with first refractive index
There are the second dielectric film of the second refractive index, the first refractive index to be less than second refractive index.First dielectric film
Can improve the breakdown voltage of the layered dielectric, second dielectric film can improve the layered dielectric through when
Breakdown, so that the layered dielectric meets the requirement of breakdown voltage and time breakdown simultaneously.
According to above-mentioned core concept, the present invention also provides a kind of preparation methods of capacitor, include the following steps：
Step S11 provides a first electrode；
Step S12 forms a layered dielectric on the first electrode, wherein the layered dielectric includes at least
One the first dielectric film and second dielectric film with the second refractive index with first refractive index, first folding
It penetrates rate and is less than second refractive index；
Step S13 forms a second electrode on the layered dielectric.
The several embodiments for being exemplified below the capacitor and preparation method are answered with clearly illustrating present disclosure
When it is clear that, present disclosure is not restricted to following embodiment, other pass through the routine of those of ordinary skill in the art
The improvement of technological means is also within the thought range of the present invention.
First embodiment
Below in conjunction with Fig. 1 to Fig. 5, the capacitor and preparation method of the present invention are illustrated, it is in the present embodiment, described
Capacitor is illustrated by taking MIM capacitor as an example.Wherein, Fig. 1 is the stream of the preparation method of capacitor in one embodiment of the invention
Cheng Tu；Fig. 2 to Fig. 5 is the schematic diagram of device architecture of the capacitor in preparation process in first embodiment of the invention.In this reality
It applies in example, the layered dielectric includes first dielectric film and second dielectric film.
First, step S11 is carried out, as shown in Fig. 2, providing a first electrode 100, the capacitor in the present embodiment is
MIM capacitor, so, the material of the first electrode 100 is metal, such as copper metal etc..In general, the first electrode
100 are formed in substrate, and the base material is silica, silicon nitride, low-K dielectric material or super low-K dielectric material.The base
Bottom can also be multilayer packed structures, including semiconductor substrate and at least one layer of interlayer dielectric layer in semiconductor substrate,
In the semiconductor substrate, the material of the semiconductor substrate can be monocrystalline silicon (Si), monocrystalline germanium (Ge), SiGe (GeSi),
Or silicon carbide (SiC)；Can also be silicon-on-insulator (SOI) or germanium on insulator (GOI)；Or can also be other materials
Material, such as III-V compounds of group such as GaAs.It could be formed with semiconductor devices, such as MOS crystal in the semiconductor substrate
Pipe etc..In general, the first electrode 100 is located in the interlayer dielectric layer of the semiconductor substrate, in the interlayer dielectric layer
Passive device, such as inductance, capacitance etc. can also be formed.In the particular embodiment, the first electrode 100 can with partly lead
Body device or passive device electrical connection.The substrate be it will be understood by those skilled in the art that, in fig. 2 be tool
Body is shown.
Then step S12 is carried out, forms a layered dielectric in the first electrode 100, it is in the present embodiment, described
Layered dielectric includes first dielectric film and second dielectric film, so in step s 12, successively
Prepare first dielectric film and second dielectric film.For example, first as shown in figure 3, being made in the first electrode 100
Standby one first dielectric film 121；Again as shown in figure 4, preparing one second dielectric film 122 on first dielectric film 121.
So that in the layered dielectric 120, first dielectric film 121 is close to the first electrode 100.
Preferably, the material of first dielectric film 121 and second dielectric film 122 is silicon nitride, nitridation
Silicon has preferable electrical insulating property.Wherein, first dielectric film 121 and second dielectric film 122 may be used
Prepared by chemical vapor deposition method, the reaction source of chemical vapor deposition method may include silicon source and nitrogen source, and the silicon source can be with
For silicon-containing gas such as silane, the nitrogen source is ammonia silicon-containing gas.
When preparing first dielectric film 121 using chemical vapor deposition method, the gas of the silicon source and nitrogen source
Flow-rate ratio is 0.5:1~1.5:1, for example, 1:1；Second dielectric film 122 is being prepared using chemical vapor deposition method
When, the gas flow ratio of the silicon source and nitrogen source is 2:1~4:1, for example, 3:1.Using above-mentioned technique, it can make described
The first refractive index of one dielectric film 121 is less than the second refractive index of second dielectric film 122.But first electricity
The preparation of deielectric-coating 121 and second dielectric film 122 is conveniently not limited to above-mentioned technique, as long as so that the first refractive
Rate is less than the second refractive index, also within the thought range of the present invention.Preferably, the first refractive index is less than 1.93, example
Such as 1.85,1.90, second refractive index is more than or equal to 1.93 such as 1.95,1.99 etc..
Then step S13 is carried out, as shown in figure 5, forming a second electrode 130 on the layered dielectric 120.It is described
The material of first electrode 100 is metal, such as copper metal etc..Into step S11~step S13 is crossed, electricity as shown in Figure 5 is formd
Container 1, the capacitor 1 include the first electrode 100, layered dielectric 120 and the second electrode 130 stacked gradually.
The layered dielectric 120 is located in the first electrode 100, and the second electrode is located on the layered dielectric 120.
In Figure 5, first dielectric 121 is close to the first electrode 100, i.e., described the 100, first electricity of first electrode
Medium 121, the second dielectric film 122 and second electrode 130 are cascading.In other embodiments of the invention, institute
State the first dielectric film 121 can also close to the second electrode 130, i.e., the described first electrode 100, the second dielectric film 122,
First dielectric 121 and second electrode 130 are cascading.
In the capacitor 1, first dielectric film 121 can improve the breakdown potential of the layered dielectric 120
Pressure, second dielectric film 122 can improve the time breakdown of the layered dielectric 120, so that the stacking is electric
Medium 120 meets the requirement of breakdown voltage and time breakdown simultaneously.
Second embodiment
Referring to Fig. 6, wherein, Fig. 6 is the schematic diagram of capacitor in second embodiment of the invention.In figure 6, reference label
Indicate statement structure same as the first embodiment identical with Fig. 2-Fig. 5.The capacitor 2 of the second embodiment with it is described
The capacitor 1 of first embodiment is essentially identical, difference lies in：The layered dielectric 220 includes that two first electricity are situated between
Plasma membrane 121 and second dielectric film 122, second dielectric film 122 are located at two first dielectric films
Between 121, first dielectric film 121 is another between second dielectric film 122 and first electrode 100
A first dielectric film 121 is between second dielectric film 122 and second electrode 130.
In the present embodiment, the preparation process of first dielectric film 121 and second dielectric film 122 with it is described
First embodiment is identical, according to the description of the first embodiment, first dielectric film 121 and second dielectric film
122 be prepared as it will be understood by those skilled in the art that, therefore not to repeat here.
In the capacitor 2, there are first dielectric film 121 in the both sides of second dielectric film 122 no matter
Apply high voltage from the first electrode 100, or applies high voltage, the layered dielectric 220 from the second electrode 130
Breakdown voltage and time breakdown can be improved well, to further increase the electrical property of the capacitor 2.
3rd embodiment
Referring to Fig. 7, wherein, Fig. 7 is the schematic diagram of capacitor in third embodiment of the invention.In the figure 7, reference label
Indicate statement structure same as the first embodiment identical with Fig. 2-Fig. 5.The capacitor 2 of the 3rd embodiment with it is described
The capacitor 1 of first embodiment is essentially identical, difference lies in：The layered dielectric 230 includes 2 or 2 or more institutes
State the first dielectric film 121 and 2 or 2 the second dielectric films of the above 122, first dielectric film 121 and institute
State the second dielectric film 122 be spaced successively stacking be set between the first electrode 100 and second electrode 130.
In the figure 7, the layered dielectric 230 includes two first dielectric films 121 and two second electricity
Deielectric-coating 122, in other embodiments of the invention, the layered dielectric 230 can also include 3 first dielectrics
Film 121 and two second dielectric films, 122, two first dielectric films 121 and 3 second dielectric films
122,122,4 first dielectric films 121 and 5 of 3 first dielectric films 121 and 3 second dielectric films
A described second dielectric film 122 etc..
In the present embodiment, the preparation process of first dielectric film 121 and second dielectric film 122 with it is described
First embodiment is identical, according to the description of the first embodiment, first dielectric film 121 and second dielectric film
122 be prepared as it will be understood by those skilled in the art that, therefore not to repeat here.
In the capacitor 3, first dielectric film 121 can improve the breakdown potential of the layered dielectric 120
Pressure, second dielectric film 122 can improve the time breakdown of the layered dielectric 120, so that the stacking is electric
Medium 120 meets the requirement of breakdown voltage and time breakdown simultaneously.
Fourth embodiment
Referring to Fig. 8, wherein, Fig. 8 is the schematic diagram of capacitor in fourth embodiment of the invention.In Fig. 4-Fig. 8, reference
Label indicates statement structure same as the first embodiment identical with Fig. 2-Fig. 5.The capacitor 4 of the fourth embodiment with
The capacitor 1 of the first embodiment is essentially identical, difference lies in：The layered dielectric 420 includes one described first
121, second dielectric films 122 of dielectric film and a third dielectric film 123, the third dielectric
There is film 123 third reflect rate, the third reflect rate to be less than second refractive index, first dielectric film 121, second
Dielectric film 122 and third dielectric film 123 are cascadingly set between the first electrode 100 and second electrode 130.
In Fig. 8, first dielectric film 121 is close to the first electrode 100, i.e., the described first electrode 100, the first dielectric film
121, the second dielectric film 122, third dielectric film 123 and second electrode 130 are arranged in order.In other embodiments of the invention
In, first dielectric film 121 can also be close to the second electrode 130, i.e., the described first electrode 100, third dielectric
Film 123, the second dielectric film 122, the first dielectric film 121 and second electrode 130 are arranged in order.
In the present embodiment, the preparation process of first dielectric film 121 and second dielectric film 122 with it is described
First embodiment is identical, according to the description of the first embodiment, first dielectric film 121 and second dielectric film
122 be prepared as it will be understood by those skilled in the art that, therefore not to repeat here.
Preferably, the material of the third dielectric film 123 is silicon nitride, silicon nitride has preferable electrical insulating property.Its
In, chemical vapor deposition method preparation may be used in the third dielectric film 123, and the reaction source of chemical vapor deposition method can
To include silicon source and nitrogen source, the silicon source can be the silicon-containing gas such as silane, and the nitrogen source is ammonia silicon-containing gas.In useization
When gas-phase deposition prepares the third dielectric film 123, the gas flow ratio of the silicon source and nitrogen source is 0.5:1~
1.5:1, for example, 1:1.The third reflect rate of the third dielectric film 123 can be made to be less than second refractive index, preferably
, the third reflect rate is less than 1.93 such as 1.9,2.0,2.1 etc..
In the capacitor 4, the both sides of second dielectric film 122 are respectively arranged with first dielectric film
121 and third dielectric film 123, first dielectric film 121 and third dielectric film 123 can improve the stacking electricity and be situated between
The breakdown voltage of matter 120, second dielectric film 122 can improve the time breakdown of the layered dielectric 120, to make
Obtain the requirement that the layered dielectric 120 meets breakdown voltage and time breakdown simultaneously.No matter applied from the first electrode 100
High voltage, or from the second electrode 130 apply high voltage, the breakdown voltage of the layered dielectric 420 and through when
Breakdown can be improved well, to further increase the electrical property of the capacitor 4.
Presently preferred embodiments of the present invention is as described above, still the present invention is not limited to ranges disclosed above, for example, described
Layered dielectric can also include first dielectric film stacked gradually, the second dielectric film, third dielectric film, second
Dielectric film, first dielectric film, etc.；Also, the capacitor is not limited to MIM capacitor, can also be PIP capacitor device
Or MIS capacitors etc.；In addition, the material of the layered dielectric is not limited to silicon nitride, as long as dielectric substance institute shape
The refractive index of film forming layer can directly affect the breakdown voltage and time breakdown of film layer,
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (15)
1. a kind of capacitor, including the first electrode, layered dielectric and the second electrode that stack gradually, wherein the stacking
Dielectric includes the second electricity of 2 or more the first dielectric films with first refractive index and 2 or more with the second refractive index
Deielectric-coating, first dielectric film and second dielectric film are spaced are stacked successively；Alternatively, the layered dielectric
Including first dielectric film with first refractive index, one with the second dielectric film of the second refractive index and one
Third dielectric film with third reflect rate, first dielectric film, the second dielectric film and third dielectric film are successively
It is stacked between the first electrode and second electrode；And the first refractive index is less than second refractive index, it is described
Third reflect rate is less than second refractive index, and the material of first dielectric film and second dielectric film is nitridation
Silicon.
2. capacitor as described in claim 1, which is characterized in that the material of the third dielectric film is silicon nitride.
3. the capacitor as described in any one of claim 1-2, which is characterized in that the first electrode and second electrode
Material is metal.
4. the capacitor as described in any one of claim 1-2, which is characterized in that the first refractive index be less than
1.93。
5. the capacitor as described in any one of claim 1-2, which is characterized in that second refractive index be more than or equal to
1.93。
6. a kind of preparation method of capacitor, including：
One first electrode is provided；
A layered dielectric is formed on the first electrode, wherein the layered dielectric, which includes 2 or more, has the first folding
Penetrate the first dielectric film and 2 or more the second dielectric films with the second refractive index, first dielectric film and the institute of rate
It states the second dielectric film and is spaced successively and be stacked；Alternatively, the layered dielectric includes the with first refractive index
One dielectric film, one with the second dielectric film of the second refractive index and a third dielectric with third reflect rate
Film, first dielectric film, the second dielectric film and third dielectric film are cascadingly set on the first electrode and
Between two electrodes；And the first refractive index is less than second refractive index, the third reflect rate is less than described second and reflects
The material of rate, first dielectric film and second dielectric film is silicon nitride；And
A second electrode is formed on the layered dielectric.
7. the preparation method of capacitor as claimed in claim 6, which is characterized in that the material of the third dielectric film is nitrogen
SiClx.
8. the preparation method of capacitor as claimed in claim 7, which is characterized in that use the first chemical vapor deposition method system
The reaction source of the standby third dielectric film, first chemical vapor deposition method includes the first silicon source and the first nitrogen source, the
The gas flow ratio of one silicon source and the first nitrogen source is 0.5:1~1.5:1.
9. the preparation method of capacitor as claimed in claim 8, which is characterized in that first silicon source is silane, described the
One nitrogen source is ammonia.
10. the preparation method of the capacitor as described in any one of claim 6~9, which is characterized in that using the second chemistry
Gas-phase deposition prepares first dielectric film, and the reaction source of second chemical vapor deposition method includes the second silicon source
With the second nitrogen source, the gas flow ratio of the second silicon source and the second nitrogen source is 0.5:1~1.5:1.
11. the preparation method of capacitor as claimed in claim 10, which is characterized in that second silicon source is silane, described
Second nitrogen source is ammonia.
12. the preparation method of the capacitor as described in any one of claim 6~9, which is characterized in that using third chemistry
Gas-phase deposition prepares second dielectric film, and the reaction source of the third chemical vapor deposition method includes third silicon source
With third nitrogen source, the gas flow ratio of third silicon source and third nitrogen source is 2:1~4:1.
13. the preparation method of capacitor as claimed in claim 12, which is characterized in that the third silicon source is silane, described
Third nitrogen source is ammonia.
14. the preparation method of capacitor as claimed in claim 6, which is characterized in that the first refractive index is less than 1.93.
15. the preparation method of capacitor as claimed in claim 6, which is characterized in that second refractive index be more than or equal to
1.93。
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| CN113903857B (en) * | 2021-12-06 | 2023-03-24 | 北京芯可鉴科技有限公司 | Capacitor, chip and preparation method of capacitor |
| CN115955913A (en) * | 2023-02-13 | 2023-04-11 | 广州粤芯半导体技术有限公司 | Capacitor structure, preparation method thereof and semiconductor structure |
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| EP3948950A4 (en) * | 2019-03-29 | 2022-05-25 | Texas Instruments Incorporated | Process and method for achieving high immunity to ultrafast high voltage transients across inorganic galvanic isolation barriers |
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| CN105448886A (en) | 2016-03-30 |
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