CN105448439A - Method for interface treatment of extra-high voltage basin-type insulator - Google Patents
Method for interface treatment of extra-high voltage basin-type insulator Download PDFInfo
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- CN105448439A CN105448439A CN201510945065.8A CN201510945065A CN105448439A CN 105448439 A CN105448439 A CN 105448439A CN 201510945065 A CN201510945065 A CN 201510945065A CN 105448439 A CN105448439 A CN 105448439A
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- Prior art keywords
- interface
- disc insulator
- coating
- high voltage
- basin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
- H01B19/04—Treating the surfaces, e.g. applying coatings
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- Insulating Bodies (AREA)
Abstract
The invention discloses a method for interface treatment of an extra-high voltage basin-type insulator. According to the method, the side surface of a central conductor embedment element of the basin-type insulator is coated with a layer of an interface coating, and the basin-type insulator is placed in a die after being cured initially for pouring the basin-type insulator; the interface coating adopted by the invention is an epoxy-type or rubber-type material which can be initially cured at a room temperature, and the electrical resistivity of the basin-type insulator reaches 10<8> ohms.m to 10ohms.m by adding conductive particles in a substrate material; firstly, sand blasting is carried out on the central conductor embedment element until the surface roughness is Ra12.5 to Ra25, and then a semi-conduction cross-section coating material is uniformly applied, wherein the half of the coating thickness is less than 100 micrometers. The method and the coating which are used by the invention have effects of electric field uniformity and stress buffering, so that an interface effect can be effectively suppressed, the mechanical strength of an interface part is improved, and an electrical field shielding effect is exerted on the defect of the interface part.
Description
Technical field:
The invention belongs to power equipment and manufacture field, particularly a kind of method of ultra high voltage disc insulator interface processing.
Background technology:
Disc insulator is the significant components of gas-insulated gas insulated metal enclosed swit chgear equipment (GasInsulatedSwitchgear, GIS), and its reliability has material impact to the safety of electrical network, reliability service.The region that along with the raising of electric pressure, after particularly having arrived ultra high voltage, the boundary layer formed between center conductor inserts and epoxy composite material basin body becomes electric, heat, power problem are relatively concentrated, becomes a weak link of whole disc insulator.Therefore, need to suppress the interfacial effect at interface between center conductor and basin body, take certain measure to carry out evenly to electric field, thermal field, the counter stress place of concentrating carries out stress and releases slow.
Summary of the invention:
The object of the invention is to the above-mentioned defect overcoming prior art, provide a kind of method of ultra high voltage disc insulator interface processing.
For achieving the above object, the present invention adopts following technical scheme to realize:
A kind of method of ultra high voltage disc insulator interface processing, first even application one deck interface coating on the side of the center conductor inserts of disc insulator, then the center conductor inserts being coated with interface coating is put into disc insulator mould, cast obtains the disc insulator with basin body.
The present invention further improves and is, before the side of center conductor inserts applies one deck interface coating, first on the side of center conductor inserts, carry out blasting treatment, the surface roughness after blasting treatment is Ra12.5 ~ Ra25.
The present invention further improves and is, the thickness of interface coating is not more than 100 μm, and thickness is even.
The present invention further improves and is, the resistivity of interface coating is 10
8Ω m ~ 10 Ω m.
The present invention further improves and is, interface coating is coated on the center conductor inserts side of disc insulator by interfacial agents and is formed after solidification; Wherein, interfacial agents is by can the epoxy adhesive of room temperature primary solidification, conductive particle and solvent composition, or by can room temperature-vulcanized rubber, conductive particle and solvent composition, conductive particle adopts carbon black or metallic particles, filling proportion is 2% ~ 10%, solvent is that dimethylbenzene or acetone regulate, and the viscosity adding the agent of solvent rear interface is 1000mpas ~ 2500mpas.
Relative to prior art, the present invention has following advantage:
The present invention by applying one deck interface coating on the center conductor inserts side of disc insulator, improve the mechanical strength at the interface between center conductor and basin body on the one hand, thus improve the hydraulic pressure intensity of disc insulator, after using the present invention, hydraulic pressure intensity brings up to more than 3MPa from below 2MPa; On the other hand, the surface electric field intensity that the existence of interface coating greatly reduces caused by burr raises problem, to having, calculating result in Fig. 2 without insert surface field intensity change curve during boundary layer, the situation lower surface maximum field strength of interfacial TCO layer have decreased to less than 5kV/mm from close to 25kV/mm, and the value that never meets design requirement reaches designing requirement.The reliability of disc insulator is improved by above two aspects.
Further, basis material in interfacial agents adopts epoxy resin material or room temperture rubber vulcanization class material, at room temperature can primary solidification, and aluminium conductor has good adhesive strength, make interface coating can ensure certain elasticity below 150 DEG C, and do not decompose sex change.
Accompanying drawing illustrates:
Fig. 1 is the structural representation of disc insulator.
In figure: conductor inserts centered by 1,2 is interface coating, and 3 is basin body.
Centered by Fig. 2 in the jagged situation of conductor insert surface, have, without surface field strength distribution curve during boundary layer.
Embodiment:
The following example is further explanation of the present invention, does not constitute any limitation the present invention.
As shown in Figure 1, the method of a kind of ultra high voltage disc insulator of the present invention interface processing, first even application one deck interface coating 2 on the side of the center conductor inserts 1 of disc insulator, then the center conductor inserts 1 being coated with interface coating 2 is put into disc insulator mould, cast can obtain the disc insulator with basin body 3.
Embodiment 1:
It is Ra25 that blasting treatment is carried out to surface roughness in the surface that 1, need be coated with interfacial agents to center conductor inserts, blocks the position not needing to apply;
2, take out 200g semiconductive room temperature vulcanization neoprene semi-conductive rubber, add solvent xylene and adjust its viscosity to 1800mpas;
3, using soft brush to pick semi-conductive adhesive to brush in center conductor insert surface, requiring brushing evenly without showing money or valuables one carries unintentionally situation; Place at about 25 DEG C and make boundary layer solvent evaporates and preliminary sulfuration, the later half conductive layer thickness of sulfuration is about 90 μm.
4, conductor is loaded in mould, according to normal pouring technology cast disc insulator.
5, measure the hydraulic pressure intensity of disc insulator, its hydraulic pressure intensity brings up to about 3.3MPa by below 2.0MPa, and office is high-volume all normal with other result of the tests.
Embodiment 2:
It is Ra25 that blasting treatment is carried out to surface roughness in the surface that 1, need be coated with interfacial agents to center conductor inserts, blocks the position not needing to apply.
2, take out 200g semiconductive room temperature vulcanized silicone rubber, add solvent xylene and adjust its viscosity to below 1000mpas, add 10g carbon black, add 10g vulcanizing agent, fully mix, then solvent flashing reaches between 1500mpas ~ 2500mpas to colloid viscosity.
3, using soft brush to pick semi-conductive adhesive to brush in center conductor insert surface, requiring brushing evenly without showing money or valuables one carries unintentionally situation; Place at about 25 DEG C and within 24 hours, make boundary layer solvent evaporates and preliminary sulfuration, the later half conductive layer thickness of sulfuration is about 60 μm.
4, conductor is loaded in mould, according to normal pouring technology cast disc insulator.
5, measure the hydraulic pressure intensity of disc insulator, its hydraulic pressure intensity brings up to about 3.1MPa by below 2.0MPa, and office is high-volume all normal with other result of the tests.
Embodiment 3:
It is Ra12.5 that blasting treatment is carried out to surface roughness in the surface that 1, need be coated with interfacial agents to center conductor inserts, blocks the position not needing to apply.
2, take out 200g bisphenol A type epoxy resin, epoxide number, at about 180g/eq, after adding 10g flexibilizer, then adds solvent xylene and adjusts its viscosity to below 1000mpas, add 15g carbon black, fully mix, then add the curing agent of cold curing.
3, glue being uniformly sprayed in center conductor inserts side, requiring without showing money or valuables one carries unintentionally situation; Within 24 hours, make boundary layer solvent evaporates and primary solidification about 25 DEG C placements, solidifying later half conductive layer thickness is about 40 μm.
4, conductor is loaded in mould, according to normal pouring technology cast disc insulator.
5, measure the hydraulic pressure intensity of disc insulator, its hydraulic pressure intensity brings up to about 3.7MPa by below 2.0MPa, and office is high-volume all normal with other result of the tests.
Embodiment 4:
It is Ra12.5 that blasting treatment is carried out to surface roughness in the surface that 1, need be coated with interfacial agents to center conductor inserts, blocks the position not needing to apply.
2, take out 200g bisphenol F epoxy resin, epoxide equivalent at 160 ~ 180g/eq, then adds solvent acetone and adjusts its viscosity to below 1000mpas, adds 10g carbon black and 1g copper powder, fully mixes, then add the curing agent of cold curing.
3, glue banister brush being brushed in center conductor insert surface uniformly, requiring without showing money or valuables one carries unintentionally situation; Within 12 hours, make boundary layer solvent evaporates about 25 DEG C placements, be then warming up to 120 degree and be cured, solidifying later half conductive layer thickness is about 40 μm.
4, conductor is loaded in mould, according to normal pouring technology cast disc insulator.
5, measure the hydraulic pressure intensity of disc insulator, its hydraulic pressure intensity brings up to about 3.5MPa by below 2.0MPa, and office is high-volume all normal with other result of the tests.
As shown in Figure 2, centered by the jagged situation of conductor insert surface, have, without surface field intensity distributions situation map during boundary layer, as can be seen from accompanying drawing, reach 25kV/mm without center conductor insert surface maximum field strength in boundary layer situation, exceed designing requirement.When Presence of an interface layer, center conductor insert surface maximum field intensity values is reduced to 5kV/mm, lower than the maximum field intensity values of designing requirement.Interface coating serves good shield effectiveness to center conductive surface defect, improves the reliability of disc insulator.
Claims (5)
1. the method for a ultra high voltage disc insulator interface processing, it is characterized in that, first even application one deck interface coating (2) on the side of the center conductor inserts (1) of disc insulator, then the center conductor inserts (1) being coated with interface coating (2) is put into disc insulator mould, cast obtains the disc insulator with basin body (3).
2. the method for a kind of ultra high voltage disc insulator interface processing according to claim 1, it is characterized in that, the side of center conductor inserts (1) applies one deck interface coating (2) front, first on the side of center conductor inserts (1), carry out blasting treatment, the surface roughness after blasting treatment is Ra12.5 ~ Ra25.
3. the method for a kind of ultra high voltage disc insulator interface processing according to claim 1, it is characterized in that, the thickness of interface coating (2) is not more than 100 μm, and thickness is even.
4. the method for a kind of ultra high voltage disc insulator interface processing according to claim 1, is characterized in that, the resistivity of interface coating (2) is 10
8Ω m ~ 10 Ω m.
5. the method for a kind of ultra high voltage disc insulator interface processing according to claim 1, is characterized in that, interface coating (2) is coated on center conductor inserts (1) side of disc insulator by interfacial agents and is formed after solidification; Wherein, interfacial agents is by can the epoxy adhesive of room temperature primary solidification, conductive particle and solvent composition, or by can room temperature-vulcanized rubber, conductive particle and solvent composition, conductive particle adopts carbon black or metallic particles, filling proportion is 2% ~ 10%, solvent is that dimethylbenzene or acetone regulate, and the viscosity adding the agent of solvent rear interface is 1000mpas ~ 2500mpas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510945065.8A CN105448439A (en) | 2015-12-16 | 2015-12-16 | Method for interface treatment of extra-high voltage basin-type insulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510945065.8A CN105448439A (en) | 2015-12-16 | 2015-12-16 | Method for interface treatment of extra-high voltage basin-type insulator |
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| Publication Number | Publication Date |
|---|---|
| CN105448439A true CN105448439A (en) | 2016-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510945065.8A Pending CN105448439A (en) | 2015-12-16 | 2015-12-16 | Method for interface treatment of extra-high voltage basin-type insulator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359028A (en) * | 2017-09-01 | 2017-11-17 | 云南电网有限责任公司电力科学研究院 | A kind of nano silicon oxide insulator for being used to suppress VFTO |
| CN115008657A (en) * | 2022-06-15 | 2022-09-06 | 山东达驰高压开关有限公司 | Novel epoxy resin pouring method for basin-type insulator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1659669A2 (en) * | 2004-11-18 | 2006-05-24 | Siemens Aktiengesellschaft | Insulation disc |
| CN102814892A (en) * | 2012-08-09 | 2012-12-12 | 河南平高电气股份有限公司 | Epoxy casting part manufacturing method and epoxy casting insulator manufacturing method |
-
2015
- 2015-12-16 CN CN201510945065.8A patent/CN105448439A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1659669A2 (en) * | 2004-11-18 | 2006-05-24 | Siemens Aktiengesellschaft | Insulation disc |
| CN102814892A (en) * | 2012-08-09 | 2012-12-12 | 河南平高电气股份有限公司 | Epoxy casting part manufacturing method and epoxy casting insulator manufacturing method |
Non-Patent Citations (2)
| Title |
|---|
| 赵颖等: "环氧浇注体与嵌件间粘接强度的研究", 《高压电器》 * |
| 陈允等: "1100KV盆式绝缘子界面处理工艺及质量管控措施", 《绝缘材料》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359028A (en) * | 2017-09-01 | 2017-11-17 | 云南电网有限责任公司电力科学研究院 | A kind of nano silicon oxide insulator for being used to suppress VFTO |
| CN115008657A (en) * | 2022-06-15 | 2022-09-06 | 山东达驰高压开关有限公司 | Novel epoxy resin pouring method for basin-type insulator |
| CN115008657B (en) * | 2022-06-15 | 2023-12-29 | 山东达驰高压开关有限公司 | Novel epoxy resin pouring method for basin-type insulator |
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Application publication date: 20160330 |
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