CN107359028A - A kind of nano silicon oxide insulator for being used to suppress VFTO - Google Patents
A kind of nano silicon oxide insulator for being used to suppress VFTO Download PDFInfo
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- CN107359028A CN107359028A CN201710778629.2A CN201710778629A CN107359028A CN 107359028 A CN107359028 A CN 107359028A CN 201710778629 A CN201710778629 A CN 201710778629A CN 107359028 A CN107359028 A CN 107359028A
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- silicon oxide
- nano silicon
- insulator
- vfto
- center insert
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/42—Means for obtaining improved distribution of voltage; Protection against arc discharges
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- Power Engineering (AREA)
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Abstract
The application is related to electrical equipment technical field, more particularly to a kind of nano silicon oxide insulator for being used to suppress VFTO.The insulator includes：Center insert, insulation layer, nano silicon oxide Pa electricity areas and mounting flange, wherein, the center insert is arranged at the top of a conulite, the cone is the insulation layer close to one end of the center insert, remainder is the nano silicon oxide Pa electricity areas, and the bottom in the nano silicon oxide Pa electricity areas is connected with the mounting flange.Substantial amounts of contact interface is formd between nano silicon oxide and matrix in the Pa electricity areas, when there is additional VFTO to act on insulator surface, the contact interface can improve VFTO number of turns, propagation of the VFTO in disc insulator is limited, suppresses it and normal electric field distribution is formed on disc insulator surface.So as to when VFTO ripples occur, substantially reduce the charge buildup in insulator side wall, keep the reliability of insulator.
Description
Technical field
The application is related to electrical equipment technical field, more particularly to a kind of nano silicon oxide insulation for being used to suppress VFTO
Son.
Background technology
GIS (Gas Insulated Switchgear, gas insulation metal seal combined electrical apparatus) have floor space with
Spatial volume is small, it is safe and reliable to operation, by natural environment influence is small, breaker break performance is good, the various features such as easy for installation,
Therefore it is widely used in AC Substation.Insulator is critically important insulating element in GIS, play fixed, insulation and
The effect such as sealing.
At present, the insulator commonly used in GIS device includes center abaculus, insulation layer and connecting seat.When there is VFTO (Very
Fast transient overvoltage, fast transient overvoltage) when acting on the insulator surface, the insulator can not make
Electric-charge-dissipating, so as to cause insulator to bear larger DC voltage, and then cause to bear at a relatively high transient voltage on insulator,
Serious harm is brought to insulator stable operation.In addition, in GIS runnings, in the presence of VFTO, insulator surface also will
Introduce electric charge, this will make bus section, busbar section insulator in the process of running Electric Field Distribution by serious distortion, it is easy to trigger along face
Flashover, and then cause electrical equipment damage or power system large-area power-cuts.
In recent years, surface charge accumulation retention problems in current GIS runnings are solved, are insulated in the presence of raising VFTO
Sub- operation stability, it will turn into and improve exchange GIS operation stabilities, and solve that not clear dodge occurs in exchange GIS runnings
The key of network problem, there is great significance of scientific research and application value.However, so far, most of correlative study remains in
Simulation analysis, and the study on the modification of small test product sample block, there is the insulator for being used to suppress VFTO of commercial Application potential still
So it is rarely reported.
The content of the invention
The application provides a kind of nano silicon oxide insulator for being used to suppress VFTO, to solve in the presence of VFTO, absolutely
Edge sublist surface charge is assembled, the problem of causing GIS device fluctuation of service.
A kind of nano silicon oxide insulator for being used to suppress VFTO, including：Center insert, insulation layer, nano silicon oxide are climbed
Electric area and mounting flange, wherein, the center insert is arranged at the top of a conulite, and the cone is close to the center
One end of inserts is the insulation layer, and remainder is the nano silicon oxide Pa electricity areas, the nano silicon oxide Pa electricity areas
Bottom is connected with the mounting flange.
Optionally, the material in the nano silicon oxide Pa electricity areas is epoxy resin-matrix nano silicon oxide, wherein, the nanometer
The content of silica any value between 10%-15%.
Optionally, the material of the insulation layer is epoxy resin-matrix aluminum oxide, wherein, the content of aluminum oxide is 5%-10%
Between any value.
Optionally, the center insert includes abaculus, retainer ring and stay hook；The abaculus is column structure, described embedding
The side wall of block is provided with multiple grooves and projection, and the projection is provided with the retainer ring, and the retainer ring is provided with institute
State stay hook.
Optionally, the upper bottom surface of the abaculus and bottom surface centre are respectively equipped with a positioning hole；The upper bottom surface
Or bottom surface is provided with multiple bolt fixing holes.
Optionally, the drift angle of the cone is any value between 60 degree to 150 degree.
The technical scheme that the application provides includes following advantageous effects：
The insulator that the embodiment of the present application provides, provided with nano silicon oxide Pa electricity areas, the nano silicon oxide in the Pa electricity areas
Substantial amounts of contact interface is formd between matrix, when there is additional VFTO to act on insulator surface, the contact interface can
To improve VFTO number of turns, propagation of the limitation VFTO in disc insulator, suppress it and formed on disc insulator surface
Normal electric field is distributed.So as to when VFTO ripples occur, the charge buildup in insulator side wall is substantially reduced, keep insulator can
By property.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the application, letter will be made to the required accompanying drawing used in embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without having to pay creative labor,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of structural representation for being used to suppress VFTO nano silicon oxide insulator that the embodiment of the present application provides
Figure.
Fig. 2 is the structural representation for the center insert that the embodiment of the present application provides.
The VFTO oscillograms applied at the center insert that Fig. 3 the embodiment of the present application provides.
Fig. 4 is the potential energy diagram at the mounting flange that the embodiment of the present application provides.
Description of reference numerals：
1st, center insert；11st, abaculus；12nd, retainer ring；13rd, stay hook；14th, positioning hole；15th, bolt fixing hole；2nd, insulate
Area；3rd, nano silicon oxide Pa electricity areas；4th, mounting flange.
Embodiment
Accompanying drawing herein is merged in specification and forms the part of this specification, shows the implementation for meeting the application
Example, and be used to together with specification to explain the principle of the application.
, below will be to embodiment or existing in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, for those of ordinary skill in the art
Speech, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Embodiment 1
Fig. 1 is a kind of structural representation for being used to suppress VFTO nano silicon oxide insulator that the embodiment of the present application provides
Figure.Referring to Fig. 1, the insulator includes：Center insert 1, insulation layer 2, nano silicon oxide Pa electricity areas 3 and mounting flange 4.Wherein,
The center insert 1 is arranged at the top of a conulite, and the cone is divided into two parts, wherein one close to center insert 1
It is nano silicon oxide Pa electricity areas 3, the bottom in nano silicon oxide Pa electricity areas 3 and mounting flange 4 to hold as insulation layer 2, remainder
It is connected.That is, the longitudinal section of the insulator is " V " type structure.
Optionally, the insulation layer 2 that the embodiment of the present application provides is epoxy resin-matrix aluminum oxide edge area, and wherein aluminum oxide adds
Dosage can between 5%-10% any value, such as 8%.It should be noted that content described in the application refers both to matter
Measure percentage.
Nano silicon oxide Pa electricity areas 3 are epoxy resin-matrix nano silicon oxide Pa electricity areas, wherein, the addition of nano silicon oxide
Measure any value between 10%-15%, such as 12%.
Optionally, the drift angle for the cone that the present embodiment provides is any value between 60 degree to 150 degree, for example, the cone
Drift angle can be 90 degree.
Fig. 2 is the structural representation for the center insert 1 that the embodiment of the present application provides.Referring to Fig. 2, the center insert 1 includes
Abaculus 11, retainer ring 12 and stay hook 13.The abaculus 11 is column structure, and the column structure can be cylinder or cube
Aluminium block.The side wall of the column abaculus 11 is rough structure, provided with multiple grooves and projection.Wherein, part is raised
The retainer ring 12 is provided with, for example, being respectively equipped with one in equally distributed four projections on the column side wall sustained height line
Retainer ring 12.The retainer ring 12 is connected with raised interference, prevents retainer ring 12 from being come off from abaculus 11.The retainer ring 12 is any one
The side wall of side is provided with stay hook 13, and the stay hook 13 is arranged in the retainer ring 12 by bolt.Specifically, the bolt is successively
Through stay hook 13, the upper wall of retainer ring 12, projection, the lower wall of retainer ring 12, reuse during stay hook 13 is tightly fixed to by nut
On heart inserts 1.
It should be noted that in the embodiment of the present application, the above-mentioned projection being arranged at around abaculus 11, groove and stay hook
13, contribute to ensure insulator during manufacture, center insert 1 can be closely connected with insulation layer 2, avoid making
During, center insert 1 comes off from insulator.
Optionally, the upper bottom surface for the abaculus 11 that the embodiment of the present application provides and bottom surface centre are respectively equipped with one and determined
Position hole 14, for assigning alignment pin, ensure insulator during manufacture, the position of center insert 1 is without departing from default position
Put.
In addition, the upper bottom surface or bottom surface of the abaculus 11 are provided with multiple bolt fixing holes 15, for the insulator to be consolidated
Due in GIS device.Exemplary, the quantity of the bolt fixing hole 15 is 4, is uniformly arranged on the surrounding of the positioning hole 14.
Embodiment 2
The all parts for the insulator that the embodiment of the present application 1 provides, including center insert 1, insulation layer 2, nano silicon oxide
Pa electricity areas 3 and mounting flange 4, integrated attachment structure, rather than connected by modes such as bolt, screws.The present embodiment
Then mainly the preparation method of the insulator is illustrated.
The integrated insulator that the embodiment of the present application provides is prepared by the method for vacuum casting.In GIS operation
During, in the presence of VFTO, insulator surface can introduce electric charge.Compared to bolt connection, integrated attachment structure has
Beneficial to the resistance of insulator in itself is reduced, it is easy to be gathered in the electric-charge-dissipating of insulator surface.
Specifically, the integrated insulator preparation method that the embodiment of the present application provides is as follows：
(1) center insert 1 is prepared.Including preparing abaculus 11, in the raised installation retainer ring 12 of the side wall of abaculus 11, and use
Stay hook 13 is fixed in the retainer ring 12 by bolt；Also include preparing above-mentioned positioning hole 14 and bolt fixing hole 15.
(2) casting insulation area 2.Center insert 1 is placed in insulator mold, it is respectively that center is embedding using positioning hole 14
The upper bottom surface of part 1 is fixed in the upper and lower mould of mould, curing agent is added in epoxy resin-matrix aluminum oxide, using vacuum casting
Technique casting insulation area 2, makes the side wall of insulation layer 2 and center insert 1 combine closely.Projection, groove and the stay hook of the side wall
13 can promote the side wall brought close of insulation layer 2 and center insert 1, form a firm entirety.
(3) casting nano silicon oxide Pa electricity areas 3 and mounting flange 4.About four hours after the casting of insulation layer 2 terminates,
The material of insulation layer 2 has solidified, now on the basis of previous step, in epoxy resin-matrix silicon carbide filler, or asphalt mixtures modified by epoxy resin
Curing agent, casting nano silicon oxide Pa electricity areas 3 and mounting flange 4 are added in aliphatic radical Oxidation of SiC zinc compound.Treat the filler
After solidification, you can obtain the insulator that the embodiment of the present application provides.
Embodiment 3
The present embodiment is respectively respectively 0%, 5% and using the addition of the nano silicon oxide in nano silicon oxide Pa electricity areas 3
10% insulator carries out VFTO ripples and applies experiment, to detect dissipation effect of the insulator to surface charge, institute specific as follows
Show.
The VFTO oscillograms applied at the center insert 1 that Fig. 3 the embodiment of the present application provides.In each above-mentioned insulator
Apply the VFTO ripples at center insert 1, and gather high-field electrode to the surface potential number of each insulator surface mounting flange 4
According to obtaining high-field electrode as shown in Figure 4 to the potential energy diagram of the mounting flange 4 of insulator.
From fig. 4, it can be seen that in nano silicon oxide Pa electricity areas 3 nano silicon oxide addition be 0% insulator table
Face potential highest, secondly it is the insulator that addition is 5%, and addition is minimum for the surface potential of 10% insulator, and
And rejection ability increases as doping content increases.As can be seen here, the insulator, which substantially serves, suppresses VFTO effect insulation
The effect of sub- lower surface charge buildup.
This is due to that substantial amounts of contact interface is formd between nano silicon oxide and matrix in the Pa electricity areas, additional when having
VFTO when acting on insulator surface, the contact interface can improve VFTO number of turns, and limitation VFTO insulate in benzvalene form
Propagation in son, suppress it and normal electric field distribution is formed on disc insulator surface.So as to when VFTO ripples occur, substantially reduce
Charge buildup in insulator side wall, keep the reliability of insulator.
It should be noted that term " comprising ", "comprising" or its any other variant are intended to the bag of nonexcludability
Contain, so that article or equipment including a series of elements not only include those key elements, but also including not arranging clearly
The other element gone out, or also include for this process, method, article or the intrinsic key element of equipment.Not more
In the case of limitation, the key element that is limited by sentence "including a ...", it is not excluded that in the process including the key element, side
Other identical element in method, article or equipment also be present.
Described above is only the embodiment of the application, is made skilled artisans appreciate that or realizing this Shen
Please.A variety of modifications to these embodiments will be apparent to one skilled in the art, as defined herein
General Principle can be realized in other embodiments in the case where not departing from spirit herein or scope.Therefore, the application
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
It should be appreciated that the content that the application is not limited to be described above and is shown in the drawings, and can
To carry out various modifications and changes without departing from the scope.Scope of the present application is only limited by appended claim.
Claims (6)
- A kind of 1. nano silicon oxide insulator for being used to suppress VFTO, it is characterised in that including：Center insert (1), insulation layer (2), nano silicon oxide Pa electricity areas (3) and mounting flange (4), wherein, the center insert (1) is arranged at a conulite Top, the cone are the insulation layer (2) close to one end of the center insert (1), and remainder is described nano oxidized Gui Pa electricity areas (3), the bottom of the nano silicon oxide Pa electricity areas (3) are connected with the mounting flange (4).
- 2. the nano silicon oxide insulator according to claim 1 for being used to suppress VFTO, it is characterised in that the nano oxygen The material in SiClx Pa electricity areas (3) is epoxy resin-matrix nano silicon oxide, wherein, the content of the nano silicon oxide is 10%- Any value between 15%.
- 3. the nano silicon oxide insulator according to claim 1 for being used to suppress VFTO, it is characterised in that the insulation layer (2) material is epoxy resin-matrix aluminum oxide, wherein, the content of the aluminum oxide any value between 5%-10%.
- 4. the nano silicon oxide insulator according to claim 1 for being used to suppress VFTO, it is characterised in that the center is embedding Part (1) includes abaculus (11), retainer ring (12) and stay hook (13)；The abaculus (11) is column structure, the abaculus (11) Side wall be provided with multiple grooves and projection, the projection is provided with the retainer ring (12), set on the retainer ring (12) There is the stay hook (13).
- 5. the nano silicon oxide insulator according to claim 4 for being used to suppress VFTO, it is characterised in that the abaculus (11) upper bottom surface and bottom surface centre is respectively equipped with a positioning hole (14)；The upper bottom surface or bottom surface are provided with more Individual bolt fixing hole (15).
- 6. the nano silicon oxide insulator according to claim 1 for being used to suppress VFTO, it is characterised in that the cone Drift angle is any value between 60 degree to 150 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710778629.2A CN107359028B (en) | 2017-09-01 | 2017-09-01 | It is a kind of for inhibiting the nano silicon oxide insulator of VFTO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710778629.2A CN107359028B (en) | 2017-09-01 | 2017-09-01 | It is a kind of for inhibiting the nano silicon oxide insulator of VFTO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107359028A true CN107359028A (en) | 2017-11-17 |
| CN107359028B CN107359028B (en) | 2019-03-15 |
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ID=60290647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710778629.2A Active CN107359028B (en) | 2017-09-01 | 2017-09-01 | It is a kind of for inhibiting the nano silicon oxide insulator of VFTO |
Country Status (1)
| Country | Link |
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| CN (1) | CN107359028B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019148758A1 (en) * | 2018-02-01 | 2019-08-08 | 清华大学 | Direct-current basin type insulator |
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| US20110102960A1 (en) * | 2008-03-27 | 2011-05-05 | Otkrytoe Aktsionernoe Obschestvo "NPO STREAMER" | High-voltage insulator and a high-voltage electric power line using said insulator |
| CN204019828U (en) * | 2014-05-23 | 2014-12-17 | 山东泰开电器绝缘有限公司 | The casting mold of epoxy resin disc insulator |
| CN104371133A (en) * | 2014-11-04 | 2015-02-25 | 天津学子电力设备科技有限公司 | Method for eliminating electrostatic charges on surface of basin-type insulator in GIS |
| CN205050649U (en) * | 2015-10-22 | 2016-02-24 | 泰安泰山高压开关有限公司 | 220kV benzvalene form insulator |
| CN105448439A (en) * | 2015-12-16 | 2016-03-30 | 西安交通大学 | Method for interface treatment of extra-high voltage basin-type insulator |
| CN105513723A (en) * | 2016-01-29 | 2016-04-20 | 麦克奥迪（厦门）电气股份有限公司 | Basin-type insulator and manufacturing process thereof |
| CN106847430A (en) * | 2017-01-24 | 2017-06-13 | 清华大学 | A kind of electric charge self adaptation dissipation disc insulator |
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- 2017-09-01 CN CN201710778629.2A patent/CN107359028B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110102960A1 (en) * | 2008-03-27 | 2011-05-05 | Otkrytoe Aktsionernoe Obschestvo "NPO STREAMER" | High-voltage insulator and a high-voltage electric power line using said insulator |
| CN204019828U (en) * | 2014-05-23 | 2014-12-17 | 山东泰开电器绝缘有限公司 | The casting mold of epoxy resin disc insulator |
| CN104371133A (en) * | 2014-11-04 | 2015-02-25 | 天津学子电力设备科技有限公司 | Method for eliminating electrostatic charges on surface of basin-type insulator in GIS |
| CN205050649U (en) * | 2015-10-22 | 2016-02-24 | 泰安泰山高压开关有限公司 | 220kV benzvalene form insulator |
| CN105448439A (en) * | 2015-12-16 | 2016-03-30 | 西安交通大学 | Method for interface treatment of extra-high voltage basin-type insulator |
| CN105513723A (en) * | 2016-01-29 | 2016-04-20 | 麦克奥迪（厦门）电气股份有限公司 | Basin-type insulator and manufacturing process thereof |
| CN106847430A (en) * | 2017-01-24 | 2017-06-13 | 清华大学 | A kind of electric charge self adaptation dissipation disc insulator |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019148758A1 (en) * | 2018-02-01 | 2019-08-08 | 清华大学 | Direct-current basin type insulator |
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| Publication number | Publication date |
|---|---|
| CN107359028B (en) | 2019-03-15 |
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