CN105442040A - Polysilicon ingot casting method - Google Patents
Polysilicon ingot casting method Download PDFInfo
- Publication number
- CN105442040A CN105442040A CN201410414388.XA CN201410414388A CN105442040A CN 105442040 A CN105442040 A CN 105442040A CN 201410414388 A CN201410414388 A CN 201410414388A CN 105442040 A CN105442040 A CN 105442040A
- Authority
- CN
- China
- Prior art keywords
- forming core
- layer
- casting method
- ingot casting
- core source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a polysilicon ingot casting method. Two layers of silicon nitride are used for preventing the bottom from being adhered and protecting nucleation, a first layer of silicon nitride is mainly used for preventing excessive melt of partial nucleation sources, so that adhesion between the partial nucleation sources and a quartz crucible caused by excessive melt, and ingot crack caused by adhesion are prevented, a second layer of silicon nitride is mainly used for preventing nucleation sources in an interlayer between the two layers of silicon nitride from melting, in order to achieve effective nucleation. With the protection of the first layer of silicon nitride, types, granularity, weight and the like of nucleation sources can be continuously changed, in order to optimize initial nucleation at the bottom of the ingot, and adhesion to the quartz crucible and ingot crack in the research and development process of the nucleation sources and the melting technology are prevented.
Description
Technical field
The present invention relates to forming core source technology field, particularly a kind of polycrystalline silicon ingot casting method.
Background technology
Forming core source technology is the application foundation of high-efficiency polycrystalline ingot casting technology, mainly by laying some forming core materials in crucible bottom, after the fusing of silicon liquid on forming core material forming core, this forming core material can make homogeneity or heterogeneous silica-base material, and size can by the different granularity of 10-200 order.
The size of forming core source granularity has certain dependency to forming core technology, increases the roughness that granularity directly increases forming core source, bottom, improves crystal grain quality.
But in the ingot casting technology of existing crucible bottom forming core source, the ununiformity of forming core source granularity, adds sticky pot to a certain extent, splits the probability of ingot.
Summary of the invention
In view of this, the invention provides a kind of polycrystalline silicon ingot casting method, can avoid gluing pot because of the increasing of forming core source particle or ununiformity, split the situation of ingot and occur.
For achieving the above object, the invention provides following technical scheme:
A kind of polycrystalline silicon ingot casting method, comprise step S1 and lay the long crystalline substance of forming core material, S2 filler and S3 fusing, step S1 lays forming core material and comprises:
S11, at the bottom of light crucible bottom spraying the first layer releasing agent, then enter step S12;
S12, on the first layer releasing agent, evenly sprinkle forming core source material, then enter step S13;
S13, forming core source material spray caking agent solidification forming core source material and makes it reinforcement and be adsorbed on the first layer releasing agent, then entering step S14;
S14, on the forming core source material spraying caking agent, spray second layer remover again, then enter step S2.
Preferably, in step s 11, the first layer releasing agent is silicon nitride.
Preferably, in step S14, second layer remover is silicon nitride.
Preferably, in step s 13, forming core source material is one or more the mixing in silicon, silicon oxide or silicon carbide.
Preferably, in step s 13, forming core source material is the mixture of silica flour and quartz sand.
Preferably, in step s 13, the weight of forming core source material is 50-500g.
As can be seen from above-mentioned technical scheme; polycrystalline silicon ingot casting method provided by the invention; the sticky pot in bottom and forming core is protected by two-layer releasing agent; the main protection portion of the first layer releasing agent is divided the transition fusing of forming core source and splits ingot with quartz crucible adhesion, and second layer releasing agent is mainly used to protect the forming core source in double-deck releasing agent interlayer not to be melted and reaches effective forming core.Under the protection of the first layer releasing agent, initial forming core bottom crystal ingot can be optimized by the type, granularity, weight etc. constantly changing forming core source, avoid the sticky pot because bringing in forming core source and melting process R&D process, splitting ingot.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The schema of the polycrystalline silicon ingot casting method that Fig. 1 provides for the embodiment of the present invention.
Embodiment
The invention discloses a kind of polycrystalline silicon ingot casting method, can avoid gluing pot because of the increasing of forming core source particle or ununiformity, split the situation of ingot and occur.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Refer to Fig. 1, the schema of the polycrystalline silicon ingot casting method that Fig. 1 provides for the embodiment of the present invention.
The polycrystalline silicon ingot casting method that the embodiment of the present invention provides, comprise step S1 and lay the subsequent steps such as the long crystalline substance of forming core material, S2 filler and S3 fusing, its core improvement is, step S1 lays forming core material and specifically comprises:
S11, at the bottom of light crucible bottom spraying the first layer releasing agent, then enter step S12;
S12, on the first layer releasing agent, evenly sprinkle forming core source material, then enter step S13;
S13, forming core source material spray the special caking agent solidification forming core source material of one deck and makes it reinforcement and be adsorbed on the first layer releasing agent, then entering step S14;
S14, on the forming core source material spraying caking agent, spray second layer remover again, then enter step S2.
As can be seen from above-mentioned technical scheme; the polycrystalline silicon ingot casting method that the embodiment of the present invention provides; the sticky pot in bottom and forming core is protected by two-layer releasing agent; the main protection portion of the first layer releasing agent is divided the transition fusing of forming core source and splits ingot with quartz crucible adhesion, and second layer releasing agent is mainly used to protect the forming core source in double-deck releasing agent interlayer not to be melted and reaches effective forming core.Under the protection of the first layer releasing agent, initial forming core bottom crystal ingot can be optimized by the type, granularity, weight etc. constantly changing forming core source, avoid the sticky pot because bringing in forming core source and melting process R&D process, splitting ingot.
As preferably, in step s 11, the first layer releasing agent is silicon nitride, has the features such as thermostability is high, resistance of oxidation is strong.Similar, in step S14, second layer remover is silicon nitride.
The polycrystalline silicon ingot casting method that the embodiment of the present invention provides, forming core source material is one or more the mixing in silicon, silicon oxide or silicon carbide.Concrete, forming core source material is the mixture of silica flour and quartz sand.Forming core source material can be spread by sieve or spray, brush or the mode of spreading (by vibration) is dispersed on the first layer releasing agent uniformly.
Further, in step s 13, the weight of forming core source material is 50-500g.Under the prerequisite ensureing coat-thickness, those skilled in the art can select suitable consumption according to actual needs.
In sum, the polycrystalline silicon ingot casting method that the embodiment of the present invention provides comprises the steps:
S11, at the bottom of light the releasing agent such as crucible bottom spraying the first layer silicon nitride;
S12, on the releasing agents such as the first layer silicon nitride, sprinkle the forming core source materials such as 50-500g silica flour, quartz sand, be dispersed on the first layer silicon nitride coating uniformly;
S13, forming core source is sprayed the special caking agent solidification forming core source material of one deck and makes it reinforcement and be adsorbed on silicon nitride coating;
S14, on forming core source, spray the removers such as one deck silicon nitride again;
S2-S3, carry out filler and the subsequent step such as fusing is long brilliant afterwards.
Present solution provides the protected mode of the releasing agents such as two silicon nitride coatings; the nucleation mode in dinitrogen SiClx interlayer forming core source; under the duplicate protection of the first layer silicon nitride, can avoid gluing pot because of the increasing of forming core source particle or ununiformity, split the situation of ingot and occur.The present invention increases the first layer silicon nitride coating, solves the bottom caused because penetrating second layer silicon nitride coating with upper part forming core source point position and glues pot, avoid causing silicon ingot implosion.Mainly in solution high-efficiency polycrystalline ingot casting, on forming core source, silicon nitride protective layer penetrates rear sticky pot problem, protects forming core source by second layer silicon nitride coating, solves failpoint position, part forming core source simultaneously and solves sticky pot problem.
In this specification sheets, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (6)
1. a polycrystalline silicon ingot casting method, comprise step S1 and lay the long crystalline substance of forming core material, S2 filler and S3 fusing, it is characterized in that, step S1 lays forming core material and comprises:
S11, at the bottom of light crucible bottom spraying the first layer releasing agent, then enter step S12;
S12, on the first layer releasing agent, evenly sprinkle forming core source material, then enter step S13;
S13, forming core source material spray caking agent solidification forming core source material and makes it reinforcement and be adsorbed on the first layer releasing agent, then entering step S14;
S14, on the forming core source material spraying caking agent, spray second layer remover again, then enter step S2.
2. polycrystalline silicon ingot casting method according to claim 1, is characterized in that, in step s 11, the first layer releasing agent is silicon nitride.
3. polycrystalline silicon ingot casting method according to claim 2, is characterized in that, in step S14, second layer remover is silicon nitride.
4. polycrystalline silicon ingot casting method according to claim 3, is characterized in that, in step s 13, forming core source material is one or more the mixing in silicon, silicon oxide or silicon carbide.
5. polycrystalline silicon ingot casting method according to claim 4, is characterized in that, in step s 13, forming core source material is the mixture of silica flour and quartz sand.
6. polycrystalline silicon ingot casting method according to claim 5, is characterized in that, in step s 13, the weight of forming core source material is 50-500g.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410414388.XA CN105442040A (en) | 2014-08-21 | 2014-08-21 | Polysilicon ingot casting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410414388.XA CN105442040A (en) | 2014-08-21 | 2014-08-21 | Polysilicon ingot casting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105442040A true CN105442040A (en) | 2016-03-30 |
Family
ID=55552657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410414388.XA Pending CN105442040A (en) | 2014-08-21 | 2014-08-21 | Polysilicon ingot casting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105442040A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102644108A (en) * | 2012-04-18 | 2012-08-22 | 浙江碧晶科技有限公司 | Charging method for growing silicon crystal by using casting process and process for growing silicon crystal |
| CN202913087U (en) * | 2012-10-30 | 2013-05-01 | 烟台核晶陶瓷新材料有限公司 | Ceramic crucible for polycrystalline silicon ingot |
| CN203485502U (en) * | 2013-07-30 | 2014-03-19 | 东海晶澳太阳能科技有限公司 | Quartz crucible coating for producing high-performance polycrystalline silicon ingot |
| CN103966664A (en) * | 2014-04-10 | 2014-08-06 | 晶海洋半导体材料（东海）有限公司 | Heterogenous coating crucible for polycrystal ingotting and preparation method of heterogenous coating crucible |
-
2014
- 2014-08-21 CN CN201410414388.XA patent/CN105442040A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102644108A (en) * | 2012-04-18 | 2012-08-22 | 浙江碧晶科技有限公司 | Charging method for growing silicon crystal by using casting process and process for growing silicon crystal |
| CN202913087U (en) * | 2012-10-30 | 2013-05-01 | 烟台核晶陶瓷新材料有限公司 | Ceramic crucible for polycrystalline silicon ingot |
| CN203485502U (en) * | 2013-07-30 | 2014-03-19 | 东海晶澳太阳能科技有限公司 | Quartz crucible coating for producing high-performance polycrystalline silicon ingot |
| CN103966664A (en) * | 2014-04-10 | 2014-08-06 | 晶海洋半导体材料（东海）有限公司 | Heterogenous coating crucible for polycrystal ingotting and preparation method of heterogenous coating crucible |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2012045302A3 (en) | Method for producing zirconia-reinforced alumina grains and grains, in particular abrasive grains, produced by said method | |
| WO2008103417B1 (en) | Multi-layer encapsulation of diamond grit for use in earth-boring bits | |
| KR101748254B1 (en) | Melting-type paint composition for road marker and method for forming road marker using the same | |
| WO2014120475A3 (en) | Deposition of superalloys using powdered flux and metal | |
| JP2017125837A5 (en) | ||
| WO2019210666A1 (en) | Display panel and method for cutting panel body | |
| EP3950640A4 (en) | Coating layer-attached continuous ceramic fiber and method for producing same, and ceramic matrix composite material and method for producing same | |
| CN108659726A (en) | A kind of height for CNC cuttings glues PE protective films and preparation method thereof | |
| CN105442040A (en) | Polysilicon ingot casting method | |
| CN109868685A (en) | A kind of laser transfer paper and its production method | |
| CN103537993B (en) | A kind of production method of big thin-walled domain vitrified abrasive | |
| JP2003231063A (en) | Saw wire | |
| CN109023503A (en) | A kind of loading method reducing casting single crystal seed crystal ontology dislocation | |
| WO2017207898A3 (en) | Nanowire photocathode and method for producing such a photocathode | |
| CN102519318A (en) | Molding method for reducing debonding phenomena of composite structure cabin | |
| CN105236744A (en) | Flexible welding lining pad and production method thereof | |
| CA2395366A1 (en) | Treatment of rock surfaces | |
| KR101629242B1 (en) | Manufacturing Method of ladle for transferring molten metal | |
| CN104928755A (en) | Polysilicon ingot casting method | |
| CN105442041A (en) | High efficiency polycrystalline ingot casting crystal growth method | |
| RU2013150678A (en) | METHOD OF METALIZATION IN THE FORM OF COMPOSITE STRUCTURES | |
| CN102225599B (en) | Method for bonding polysilicon ingot and tray | |
| JP2016005867A5 (en) | ||
| CN105063751A (en) | Cast ingot manufacturing method | |
| WO2019135180A3 (en) | Polishing sheet and polishing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160330 |
|
| RJ01 | Rejection of invention patent application after publication |