CN105431953A - 基于固态荧光材料的嵌入式白光led封装结构及其制作方法 - Google Patents
基于固态荧光材料的嵌入式白光led封装结构及其制作方法 Download PDFInfo
- Publication number
- CN105431953A CN105431953A CN201480000543.1A CN201480000543A CN105431953A CN 105431953 A CN105431953 A CN 105431953A CN 201480000543 A CN201480000543 A CN 201480000543A CN 105431953 A CN105431953 A CN 105431953A
- Authority
- CN
- China
- Prior art keywords
- fluorescent material
- solid
- yag
- blue light
- state fluorescent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 53
- 239000007787 solid Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
本发明公开了基于固态荧光材料的嵌入式白光LED封装结构,包括蓝光芯片和Ce:YAG固态荧光材料,Ce:YAG固态荧光材料上设有与蓝光芯片相匹配的凹槽,蓝光芯片嵌入凹槽内。本发明的大功率蓝光芯片直接嵌入贴合于固态荧光材料的凹槽内,利用透镜原理将芯片发出的蓝光和固态荧光材料转化发出的黄绿光并予以混合,得到白光。该基于固态荧光材料的嵌入式白光LED封装结构工艺简单、成本低;具有高荧光效率,蓝光不泄露;可以直接通过固态荧光材料散热,散热性能好;节能环保并且大幅提高LED照明设备的使用寿命。
Description
PCT国内申请,说明书已公开。
Claims (10)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2014/079253 WO2015184618A1 (zh) | 2014-06-05 | 2014-06-05 | 基于固态荧光材料的嵌入式白光led封装结构及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105431953A true CN105431953A (zh) | 2016-03-23 |
CN105431953B CN105431953B (zh) | 2018-03-16 |
Family
ID=54765956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480000543.1A Active CN105431953B (zh) | 2014-06-05 | 2014-06-05 | 基于固态荧光材料的嵌入式白光led封装结构及其制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9537058B2 (zh) |
CN (1) | CN105431953B (zh) |
WO (1) | WO2015184618A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106746687A (zh) * | 2017-01-25 | 2017-05-31 | 上海应用技术大学 | 一种采用丝网印刷法制备led封装用荧光玻璃片的方法 |
CN112266239A (zh) * | 2020-10-19 | 2021-01-26 | 徐州凹凸光电科技有限公司 | 一种白光led/ld用高热稳定性高显色指数荧光陶瓷及其制备方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298754B (zh) * | 2016-09-30 | 2019-09-06 | 鸿利智汇集团股份有限公司 | 一种csp灯珠的制作方法及csp灯珠 |
CN112599509A (zh) * | 2020-11-09 | 2021-04-02 | 新沂市锡沂高新材料产业技术研究院有限公司 | 一种高亮度、色温可调的固态照明光源 |
CN112537953B (zh) * | 2020-12-16 | 2022-03-08 | 中国科学院上海硅酸盐研究所 | 一种复合荧光陶瓷及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101173251B1 (ko) * | 2011-07-01 | 2012-08-10 | 한국광기술원 | 프리폼 형광체 시트가 사용된 백색 엘이디 소자 제조 방법 |
US20120294025A1 (en) * | 2011-05-18 | 2012-11-22 | Samsung Electronics Co., Ltd. | Light emitting device assembly and headlamp including the same |
CN103258938A (zh) * | 2013-05-03 | 2013-08-21 | 杭州耀迪科技有限公司 | 一种含荧光粉的导热led灯条封装基板的制作方法 |
CN103840063A (zh) * | 2013-11-15 | 2014-06-04 | 芜湖德豪润达光电科技有限公司 | Led封装基板及其制作方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000228170A (ja) * | 1998-12-04 | 2000-08-15 | Toshiba Lighting & Technology Corp | 高圧放電ランプ、高圧放電ランプ装置、高圧放電ランプ点灯装置および照明装置 |
JP3749243B2 (ja) * | 2001-09-03 | 2006-02-22 | 松下電器産業株式会社 | 半導体発光デバイス,発光装置及び半導体発光デバイスの製造方法 |
CA2427559A1 (en) * | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
US20060171152A1 (en) * | 2005-01-20 | 2006-08-03 | Toyoda Gosei Co., Ltd. | Light emitting device and method of making the same |
US20070131940A1 (en) * | 2005-12-08 | 2007-06-14 | Unity Opto Technology Co., Ltd. | Color-mixing LED |
US8441179B2 (en) * | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
JP5089212B2 (ja) * | 2007-03-23 | 2012-12-05 | シャープ株式会社 | 発光装置およびそれを用いたledランプ、発光装置の製造方法 |
US8314438B2 (en) * | 2008-03-25 | 2012-11-20 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bump/base heat spreader and cavity in bump |
US8212279B2 (en) * | 2008-03-25 | 2012-07-03 | Bridge Semiconductor Corporation | Semiconductor chip assembly with post/base heat spreader, signal post and cavity |
JP5345363B2 (ja) * | 2008-06-24 | 2013-11-20 | シャープ株式会社 | 発光装置 |
KR20100030470A (ko) * | 2008-09-10 | 2010-03-18 | 삼성전자주식회사 | 다양한 색 온도의 백색광을 제공할 수 있는 발광 장치 및 발광 시스템 |
TWI408831B (zh) * | 2008-12-05 | 2013-09-11 | 私立中原大學 | 發光二極體及其製程 |
US8410679B2 (en) * | 2010-09-21 | 2013-04-02 | Cree, Inc. | Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface |
JP5864367B2 (ja) * | 2011-06-16 | 2016-02-17 | 日東電工株式会社 | 蛍光接着シート、蛍光体層付発光ダイオード素子、発光ダイオード装置およびそれらの製造方法 |
CN103022325B (zh) * | 2012-12-24 | 2016-01-20 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | 应用远距式荧光粉层的led封装结构及其制成方法 |
US9423083B2 (en) * | 2013-03-07 | 2016-08-23 | Pacific Light Technologies, Corp. | Multiple quantum dot (QD) device |
CN103700753A (zh) * | 2013-12-13 | 2014-04-02 | 张晓峰 | 一种360度发光的柔性led发光条 |
-
2014
- 2014-06-05 CN CN201480000543.1A patent/CN105431953B/zh active Active
- 2014-06-05 US US14/761,954 patent/US9537058B2/en not_active Expired - Fee Related
- 2014-06-05 WO PCT/CN2014/079253 patent/WO2015184618A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120294025A1 (en) * | 2011-05-18 | 2012-11-22 | Samsung Electronics Co., Ltd. | Light emitting device assembly and headlamp including the same |
KR101173251B1 (ko) * | 2011-07-01 | 2012-08-10 | 한국광기술원 | 프리폼 형광체 시트가 사용된 백색 엘이디 소자 제조 방법 |
CN103258938A (zh) * | 2013-05-03 | 2013-08-21 | 杭州耀迪科技有限公司 | 一种含荧光粉的导热led灯条封装基板的制作方法 |
CN103840063A (zh) * | 2013-11-15 | 2014-06-04 | 芜湖德豪润达光电科技有限公司 | Led封装基板及其制作方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106746687A (zh) * | 2017-01-25 | 2017-05-31 | 上海应用技术大学 | 一种采用丝网印刷法制备led封装用荧光玻璃片的方法 |
CN106746687B (zh) * | 2017-01-25 | 2019-10-01 | 上海应用技术大学 | 一种采用丝网印刷法制备led封装用荧光玻璃片的方法 |
CN112266239A (zh) * | 2020-10-19 | 2021-01-26 | 徐州凹凸光电科技有限公司 | 一种白光led/ld用高热稳定性高显色指数荧光陶瓷及其制备方法 |
CN112266239B (zh) * | 2020-10-19 | 2022-11-25 | 徐州凹凸光电科技有限公司 | 一种白光led/ld用高热稳定性高显色指数荧光陶瓷及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US9537058B2 (en) | 2017-01-03 |
WO2015184618A1 (zh) | 2015-12-10 |
CN105431953B (zh) | 2018-03-16 |
US20160268482A1 (en) | 2016-09-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN204289503U (zh) | 基于固态荧光材料的嵌入式白光led封装结构 | |
CN105431953A (zh) | 基于固态荧光材料的嵌入式白光led封装结构及其制作方法 | |
TW200525781A (en) | White light LED | |
CN106486471A (zh) | 发光装置 | |
CN103050615B (zh) | 一种高显色性白光led器件 | |
WO2014040412A1 (zh) | 一种led封装结构 | |
CN106986626B (zh) | 一种羟基磷灰石基荧光陶瓷材料及其制备方法 | |
CN105431503A (zh) | 大功率高温白光led封装及其制作方法 | |
CN202839748U (zh) | 一种基于倒装led芯片的白光光源模组 | |
CN204289523U (zh) | 大功率高温白光led封装 | |
CN102454945A (zh) | 一种获得高显色性暖白光的方法及其封装结构 | |
KR20080041818A (ko) | 렌즈 및 이를 포함하는 발광 소자 패키지 | |
CN103915551A (zh) | 一种新型白光led封装结构及制作方法 | |
CN201936915U (zh) | 一种led封装结构及其led模组 | |
CN204403826U (zh) | 使用寿命长的无极灯 | |
CN205282499U (zh) | 一种陶瓷荧光基板及发光装置 | |
CN103727438A (zh) | Led灯具及制作方法 | |
CN206036806U (zh) | 一种led铁路信号灯光源 | |
CN203415624U (zh) | 一种高显色性白光led器件 | |
CN202394970U (zh) | 一种led芯片和应用了该led芯片的光源模块 | |
CN201838590U (zh) | 双晶片高显色性暖白光封装结构 | |
CN204927325U (zh) | 发光二极管封装结构 | |
CN206211262U (zh) | 基于氮化铝陶瓷的激光光源封装结构、白光光源、照明灯具及投影装置 | |
CN204361095U (zh) | 一种基于远程荧光粉激发的hv-cob led光源 | |
Hou et al. | Development of the research on high-power WLEDs |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220915 Address after: East side of Weimeng Road, Dianshanhu Town, Kunshan City, Suzhou City, Jiangsu Province 215000 Patentee after: KUNSHAN KAIWEI ELECTRONIC Co.,Ltd. Address before: No. 3301 Huqingping Road, Qingpu District, Shanghai, 201701 Patentee before: SHANGHAI FUDI LIGHTING ELECTRONIC. Co.,Ltd. |
|
TR01 | Transfer of patent right |