CN105429124A - Input overvoltage protection circuit used for high-voltage integrated circuit - Google Patents

Input overvoltage protection circuit used for high-voltage integrated circuit Download PDF

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Publication number
CN105429124A
CN105429124A CN201511031936.1A CN201511031936A CN105429124A CN 105429124 A CN105429124 A CN 105429124A CN 201511031936 A CN201511031936 A CN 201511031936A CN 105429124 A CN105429124 A CN 105429124A
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CN
China
Prior art keywords
zener diode
integrated circuit
diode group
high voltage
voltage integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201511031936.1A
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Chinese (zh)
Inventor
谢正开
叶东
程春云
梁盛林
张波
毕磊
毕超
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Fortior Technology Shenzhen Co Ltd
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Fortior Technology Shenzhen Co Ltd
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Priority to CN201511031936.1A priority Critical patent/CN105429124A/en
Publication of CN105429124A publication Critical patent/CN105429124A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention discloses an input overvoltage protection circuit used for a high-voltage integrated circuit. The input overvoltage protection circuit comprises the components of a first resistor, a second resistor, a first Zener diode set and a second Zener diode set. One end of the first resistor is connected with the anode of the first Zener diode set. The second resistor is connected with the anode of the second Zener diode set. The cathode of the first Zener diode set is connected with the HIN end of the high-voltage integrated circuit. The cathode of the second Zener diode set is connected with the LIN end of the high-voltage integrated circuit. The input overvoltage protection circuit has relatively simple integral circuit structure. Just through appropriately increasing or reducing Zener voltage and number of the Zener diodes, functions of input HIN/LIN overvoltage protection, input HIN/LIN overshoot filtering, input signal source HIN/LIN electrostatic discharge protection, etc. can be realized. Furthermore the input overvoltage protection circuit has stable performance.

Description

For the protection circuit against input over-voltage of high voltage integrated circuit
Technical field
The present invention relates to a kind of high voltage integrated circuit technical field, be specifically related to a kind of protection circuit against input over-voltage for high voltage integrated circuit.
Background technology
High voltage integrated circuit (HVIC) is a kind of gate driver circuit with the function such as under-voltage protection, logic control; power electronics combines with semiconductor technology by it; replace traditional discrete component gradually, be used in the driving such as high-power IGBT, MOSFET field more and more.
High voltage integrated circuit application system is made up of high voltage integrated circuit, power device, peripheral resistance capacitance inductance etc. usually.In high voltage integrated circuit, the physical characteristic of metal-oxide-semiconductor determines the normal work of its ability in suitable voltage range.But because the factors such as signal source instability there will be the overshoot phenomenon that input voltage reaches circuit voltage extreme value in practical application.In addition, extraneous static effect can produce high instantaneous voltage at circuit input end, and discharges transient high-current, produces impact greatly circuit.In order to prevent input signal source HIN or LIN voltage magnitude excessive and cause the damage of high voltage integrated circuit, the inefficacy of system; need to increase overvoltage crowbar at the input of circuit; guarantee that input signal source HIN or LIN can not exceed predetermined value; and the protection circuit against input over-voltage work of high voltage integrated circuit is made when input signal source HIN or LIN reaches certain value; to provide the mode of heavy-current discharge passage; reduce HIN or LIN voltage; high voltage integrated circuit is normally worked, guarantees the safe operation of system.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of protection circuit against input over-voltage for high voltage integrated circuit.
For achieving the above object, technical scheme of the present invention is achieved in that
The embodiment of the present invention provides a kind of protection circuit against input over-voltage for high voltage integrated circuit; this circuit comprises: the first resistance, the second resistance, the first Zener diode group, the second Zener diode group; one end of described first resistance is connected with the anode of the first Zener diode group; described second resistance is connected with the anode of the second Zener diode group; the described negative electrode of the first Zener diode group is held with the HIN of high voltage integrated circuit and is connected, and the described negative electrode of the second Zener diode group is held with the LIN of high voltage integrated circuit and is connected.
In such scheme, described first Zener diode group, the second Zener diode group are connected in series in turn in the same way by least one Zener diode and form.
In such scheme, described first Zener diode group, the second Zener diode group are by when being made up of plural Zener diode, and the negative electrode of a Zener diode is connected with the anode of previous Zener diode thereafter.
In such scheme, the equal ground connection of the other end of described first resistance, the second resistance or the pin of high voltage integrated circuit.
In such scheme, the equal ground connection of anode of described first Zener diode group, the second Zener diode group.
The embodiment of the present invention also provides a kind of protection circuit against input over-voltage for high voltage integrated circuit, and this circuit includes the first resistance, the second resistance, the first Zener diode group, the second Zener diode group; The ground of one terminating systems of wherein said first resistance, the HIN pin of another termination first high voltage integrated circuit and the negative electrode of the first Zener diode group, the ground of the other end welding system of described first Zener diode.The ground of one terminating systems of described second resistance, the LIN pin of another termination first high voltage integrated circuit and the negative electrode of the second Zener diode group, the ground of the other end welding system of described second Zener diode group.
The embodiment of the present invention also provides a kind of protection circuit against input over-voltage for high voltage integrated circuit, and this circuit includes the first resistance, the second resistance, the first Zener diode group, the second Zener diode group; Wherein, the COM of termination second high voltage integrated circuit of described first resistance, the HIN pin of another termination second high voltage integrated circuit and the negative electrode of the first Zener diode group, the COM of another termination second high voltage integrated circuit of described first Zener diode group; The COM of one termination second high voltage integrated circuit of described second resistance, the LIN pin of another termination second high voltage integrated circuit and the negative electrode of the second Zener diode group, the COM of another termination second high voltage integrated circuit of described second Zener diode group.
Compared with prior art, beneficial effect of the present invention:
(1) integrated circuit structure of the present invention is comparatively simple; only need Zener voltage and the number of suitable increase or minimizing Zener diode; just can realize the function such as electrostatic discharge protection of the input HIN/LIN overvoltage protection of high voltage integrated circuit, input HIN/LIN overshoot filtering, input signal source HIN/LIN, and performance is highly stable.
(2) the present invention effectively can filter input signal source HIN/LIN overshoot voltage by resistance and Zener diode group, thus carrys out filtering input signal source HIN/LIN overshoot voltage without the need to additionally increasing filter circuit, enormously simplify high voltage integrated circuit.
(3) the present invention constitutes effective input signal static release protection circuit by resistance and Zener diode group, thus just can monitor the overpressure situation of input power without the need to additionally increasing static release protection circuit, enormously simplify high voltage integrated circuit.
Accompanying drawing explanation
Fig. 1 provides a kind of protection circuit against input over-voltage for high voltage integrated circuit for the embodiment of the present invention 1;
Fig. 2 provides a kind of protection circuit against input over-voltage for high voltage integrated circuit for the embodiment of the present invention 2;
Fig. 3 is input signal HIN/LIN overvoltage protection schematic diagram of the present invention;
Fig. 4 is input signal HIN/LIN overshoot filter circuit schematic diagram of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The embodiment of the present invention provides a kind of protection circuit against input over-voltage for high voltage integrated circuit; this circuit comprises: the first resistance, the second resistance, the first Zener diode group, the second Zener diode group; one end of described first resistance is connected with the anode of the first Zener diode group; described second resistance is connected with the anode of the second Zener diode group; the described negative electrode of the first Zener diode group is held with the HIN of high voltage integrated circuit and is connected, and the described negative electrode of the second Zener diode group is held with the LIN of high voltage integrated circuit and is connected.
Described first Zener diode group, the second Zener diode group are connected in series in turn in the same way by least one Zener diode and form.
Described first Zener diode group, the second Zener diode group are by when being made up of plural Zener diode, and the negative electrode of a Zener diode will be connected with the anode of previous Zener diode thereafter.
The equal ground connection of the other end of described first resistance, the second resistance or the pin of high voltage integrated circuit.
Embodiment 1
The embodiment of the present invention provides a kind of protection circuit against input over-voltage for high voltage integrated circuit, and as shown in Figure 1, this circuit includes the first resistance 1, second resistance 2, first Zener diode group 3, second Zener diode group 4; The ground of one terminating systems of wherein said first resistance 1, the HIN pin of another termination first high voltage integrated circuit 5 and the negative electrode of the first Zener diode group 3, the ground of the other end welding system of described first Zener diode 3.The ground of one terminating systems of described second resistance 2, the LIN pin of another termination first high voltage integrated circuit 5 and the negative electrode of the second Zener diode group 3, the ground of the other end welding system of described second Zener diode group 3.
Embodiment 2
The embodiment of the present invention provides a kind of protection circuit against input over-voltage for high voltage integrated circuit, and as shown in Figure 2, this circuit includes the first resistance 1, second resistance 2, first Zener diode group 3, second Zener diode group 4; Wherein, the COM of one termination second high voltage integrated circuit 6 of described first resistance 1, the HIN pin of another termination second high voltage integrated circuit 6 and the negative electrode of the first Zener diode group 3, the COM of another termination second high voltage integrated circuit 6 of described first Zener diode group 3; The COM of one termination second high voltage integrated circuit 6 of described second resistance 2, the LIN pin of another termination second high voltage integrated circuit 6 and the negative electrode of the second Zener diode group 4, the COM of another termination second high voltage integrated circuit 6 of described second Zener diode group 4.
The present invention effectively can filter input signal source HIN/LIN overshoot voltage, replaces the correlation filtering function of traditional filter circuit.
The first Zener diode group 3, second Zener diode group 4 in embodiment 1 and 2 plays very important effect in the present invention, and it is connected in series in turn in the same way by one and above Zener diode and forms.During serial connection, when being made up of plural Zener diode, thereafter the negative electrode of a Zener diode will be connected with the anode of previous Zener diode, anode and the negative electrode of whole first Zener diode group 3, second Zener diode group 4 is just defined after serial connection, the negative electrode of described first Zener diode group 3, second Zener diode group 4 is connected with HIN or LIN of high voltage integrated circuit respectively, and the plus earth of described first Zener diode group 3, second Zener diode group 4.
As shown in Figure 3, when the voltage amplitude of input signal is higher than overvoltage protection threshold voltage VTH, the voltage amplitude of input signal by clamper in VTH, can be protected internal circuit by the present invention.
As shown in Figure 4, the interference noise of input signal can filter by the present invention, and the pulse duration of filtering is determined by the resistance of resistance R and the area of Zener diode group.
The above, be only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.

Claims (7)

1. the protection circuit against input over-voltage for high voltage integrated circuit; it is characterized in that; this circuit comprises: the first resistance, the second resistance, the first Zener diode group, the second Zener diode group; one end of described first resistance is connected with the anode of the first Zener diode group; described second resistance is connected with the anode of the second Zener diode group; the described negative electrode of the first Zener diode group is held with the HIN of high voltage integrated circuit and is connected, and the described negative electrode of the second Zener diode group is held with the LIN of high voltage integrated circuit and is connected.
2. the protection circuit against input over-voltage for high voltage integrated circuit according to claim 1, is characterized in that: described first Zener diode group, the second Zener diode group are connected in series in turn in the same way by least one Zener diode and form.
3. the protection circuit against input over-voltage for high voltage integrated circuit according to claim 1 and 2; it is characterized in that: described first Zener diode group, the second Zener diode group are by when being made up of plural Zener diode, and the negative electrode of a Zener diode is connected with the anode of previous Zener diode thereafter.
4. the protection circuit against input over-voltage for high voltage integrated circuit according to claim 1, is characterized in that: the equal ground connection of the other end of described first resistance, the second resistance or the pin of high voltage integrated circuit.
5. the protection circuit against input over-voltage for high voltage integrated circuit according to claim 1, is characterized in that: the equal ground connection of anode of described first Zener diode group, the second Zener diode group.
6. for a protection circuit against input over-voltage for high voltage integrated circuit, it is characterized in that, this circuit includes the first resistance, the second resistance, the first Zener diode group, the second Zener diode group; The ground of one terminating systems of wherein said first resistance, the HIN pin of another termination first high voltage integrated circuit and the negative electrode of the first Zener diode group, the ground of the other end welding system of described first Zener diode.The ground of one terminating systems of described second resistance, the LIN pin of another termination first high voltage integrated circuit and the negative electrode of the second Zener diode group, the ground of the other end welding system of described second Zener diode group.
7. for a protection circuit against input over-voltage for high voltage integrated circuit, it is characterized in that, this circuit includes the first resistance, the second resistance, the first Zener diode group, the second Zener diode group; Wherein, the COM of termination second high voltage integrated circuit of described first resistance, the HIN pin of another termination second high voltage integrated circuit and the negative electrode of the first Zener diode group, the COM of another termination second high voltage integrated circuit of described first Zener diode group; The COM of one termination second high voltage integrated circuit of described second resistance, the LIN pin of another termination second high voltage integrated circuit and the negative electrode of the second Zener diode group, the COM of another termination second high voltage integrated circuit of described second Zener diode group.
CN201511031936.1A 2015-12-31 2015-12-31 Input overvoltage protection circuit used for high-voltage integrated circuit Pending CN105429124A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201511031936.1A CN105429124A (en) 2015-12-31 2015-12-31 Input overvoltage protection circuit used for high-voltage integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201511031936.1A CN105429124A (en) 2015-12-31 2015-12-31 Input overvoltage protection circuit used for high-voltage integrated circuit

Publications (1)

Publication Number Publication Date
CN105429124A true CN105429124A (en) 2016-03-23

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834436A (en) * 2010-05-06 2010-09-15 日银Imp微电子有限公司 Overvoltage protection circuit for integrated circuit
CN202034777U (en) * 2011-05-12 2011-11-09 昂纳信息技术(深圳)有限公司 ESD (electrostatic discharge) protective circuit used for capacitive load
US20140002100A1 (en) * 2011-02-24 2014-01-02 Thomas Feucht Surge protection circuit and method for testing a surge protection circuit
CN203607841U (en) * 2013-10-17 2014-05-21 峰岹科技(深圳)有限公司 Overvoltage protection circuit used for high-voltage integrated circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834436A (en) * 2010-05-06 2010-09-15 日银Imp微电子有限公司 Overvoltage protection circuit for integrated circuit
US20140002100A1 (en) * 2011-02-24 2014-01-02 Thomas Feucht Surge protection circuit and method for testing a surge protection circuit
CN202034777U (en) * 2011-05-12 2011-11-09 昂纳信息技术(深圳)有限公司 ESD (electrostatic discharge) protective circuit used for capacitive load
CN203607841U (en) * 2013-10-17 2014-05-21 峰岹科技(深圳)有限公司 Overvoltage protection circuit used for high-voltage integrated circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
邱环宇,虞海燕,林争辉: "半桥栅驱动600V高压驱动芯片设计", 《集成电路应用》 *

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Application publication date: 20160323