CN105428964B - Graphene terahertz transmitter and preparation method thereof - Google Patents
Graphene terahertz transmitter and preparation method thereof Download PDFInfo
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- CN105428964B CN105428964B CN201510767570.8A CN201510767570A CN105428964B CN 105428964 B CN105428964 B CN 105428964B CN 201510767570 A CN201510767570 A CN 201510767570A CN 105428964 B CN105428964 B CN 105428964B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
Abstract
The present invention provides a kind of graphene terahertz transmitter and preparation method thereof, comprising: substrate and the graphene nanobelt being successively set in substrate, first electrode, insulating layer and second electrode；The graphene nanobelt is located in the substrate；The first electrode is located on the graphene nanobelt partial region；The insulating layer is located in the graphene nanobelt and the first electrode；The second electrode is located on insulating layer corresponding with the graphene nanobelt；The middle part width of the graphene nanobelt is greater than the width on both sides.The present invention effectively improves the emission effciency of Terahertz, while reducing equipment volume, can generate THz wave under normal temperature conditions.
Description
Technical field
The present invention relates to field of photoelectric devices more particularly to a kind of graphene terahertz transmitter and preparation method thereof.
Background technique
In recent years, Terahertz science and technology has obtained the very big concern and research extensively of countries in the world, and achieves order
The achievement that people attractes attention.THz wave is in medical imaging, material tests, environmental monitoring, mobile communication, satellite communication and military radar
Equal Applied research fields have extensive scientific research value and huge application potential.
Existing terahertz transmitter mainly has: quantum cascade laser, photoconductive antenna, non-linear frequency mixing and vacuum
Electronics surges pipe.Wherein, photoconductive antenna can emit milliwatt THz wave, but its postposition ancillary equipment is huge, it is difficult to realize
The miniaturization of terahertz transmitter.Similarly, non-linear frequency mixing and vacuum electronic surge pipe be also difficult to realize miniaturization production.
Quantum cascade laser can overcome the tuning of disadvantage mentioned above realization THz wave, but its emission effciency is low and needs in ultralow temperature
It works under environment.Therefore, terahertz transmitter efficiency how is improved, while reducing equipment volume as urgent problem to be solved.
Summary of the invention
For the defects in the prior art, the present invention provides a kind of graphene terahertz transmitter and preparation method thereof, has
The emission effciency of Terahertz is improved to effect, while reducing equipment volume, THz wave can be generated under normal temperature conditions.
In a first aspect, the present invention provides a kind of graphene terahertz transmitter, comprising:
Substrate and the graphene nanobelt being successively set in substrate, first electrode, insulating layer and second electrode；
The graphene nanobelt is located in the substrate；The first electrode is located at graphene nano band part area
On domain；The insulating layer is located in the graphene nanobelt and the first electrode；The second electrode is located at and the stone
On the corresponding insulating layer of black alkene nanobelt；
The middle part width of the graphene nanobelt is greater than the width on both sides.
Preferably, the graphene terahertz transmitter, further includes: encapsulated layer；
The encapsulated layer is located on the second electrode and the insulating layer.
Preferably, the graphene nanobelt is single-layer graphene structure.
Preferably, the second electrode is doped electrode.
Preferably, width is less than predetermined width in the middle part of the graphene nanobelt.
Second aspect, the present invention provide a kind of graphene terahertz transmitter production method, comprising:
Graphene nanobelt is transferred in substrate, and makes the graphene nanobelt absorption on the substrate；
First electrode is formed on the partial region of the graphene nanobelt；
Insulating layer is formed on the graphene nanobelt and the first electrode；
Second electrode is formed on the partial region of the insulating layer.
Preferably, the method also includes:
Encapsulated layer is formed in the second electrode and the insulating layer.
Preferably, described that graphene nanobelt is transferred in substrate, and it is described to be adsorbed on the graphene nanobelt
In substrate, specifically include:
The graphene nanobelt is transferred in the substrate using mechanical stripping method；
On the substrate by graphene nanobelt absorption.
Preferably, described to form first electrode on the partial region of the graphene nanobelt, it specifically includes:
The spin coating photoresist on the graphene nano band, and electron beam exposure development treatment, removal are carried out to photoresist
Form the photoresist that the first electrode corresponds to region；
The first metal layer is deposited on the photoresist after electron beam exposure development treatment；
Photoresist and the first metal layer on photoresist are removed, to form the first electrode.
Preferably, described to form second electrode on the partial region of the insulating layer, it specifically includes:
The spin coating photoresist on the insulating layer, and electron beam exposure development treatment is carried out to photoresist, removal forms institute
State the photoresist of second electrode corresponding region；
The depositing second metal layer on the photoresist after electron beam exposure development treatment；
Photoresist and the second metal layer on photoresist are removed, to form the second electrode.
As shown from the above technical solution, graphene terahertz transmitter and preparation method thereof of the invention, by by graphite
Alkene nanobelt is transferred in substrate, and sequentially forms first electrode and the second pole production graphene terahertz transmitter.Have as a result,
The emission effciency of Terahertz is improved to effect, while reducing equipment volume, THz wave can be generated under normal temperature conditions.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the graphene terahertz transmitter that one embodiment of the invention provides；
Fig. 2 is graphene terahertz transmitter preferred structure schematic diagram provided in an embodiment of the present invention；
Fig. 3 is the top view of the graphene nanobelt of graphene terahertz transmitter provided in an embodiment of the present invention；
Fig. 4 is the flow diagram for the graphene terahertz transmitter production method that one embodiment of the invention provides；
Fig. 5 is the flow diagram of graphene terahertz transmitter production method provided in an embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, the technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiment of the present invention, ordinary skill people
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Fig. 1 shows the structural schematic diagram of the graphene terahertz transmitter of one embodiment of the invention offer, such as Fig. 1 institute
Show, the graphene terahertz transmitter of the present embodiment, comprising: substrate 11 and the graphene nanobelt being successively set in substrate
12, first electrode 13, insulating layer 14 and second electrode 15；
The graphene nanobelt 12 is located in the substrate 11；The first electrode 13 is located at the graphene nanobelt
On 12 partial regions；The insulating layer 14 is located in the graphene nanobelt 12 and the first electrode 13；Second electricity
Pole 15 is located on insulating layer 14 corresponding with the graphene nanobelt.
Preferably, graphene terahertz transmitter, further includes: encapsulated layer 16；
The encapsulated layer 16 is located on the second electrode 15 and the insulating layer 14, as shown in Figure 2.
Encapsulated layer 16 can protect first electrode 13 and second electrode 15 not to be corroded, to extend emitter lifetime.
Width in the middle part of the graphene nanobelt of the graphene terahertz transmitter of the present embodiment is greater than the width on both sides,
It is preferred that figure is as shown in Figure 3.
Preferably, the middle part width of graphene nanobelt is less than 100nm, can be by adjusting graphene in practical operation
Width in the middle part of nanobelt changes the launch wavelength of transmitter.
Preferably, the graphene nanobelt of the present embodiment is single-layer graphene structure.
It should be noted that the graphene nanobelt of the present embodiment is set as the narrow structure in the wide both sides in middle part, and will be above-mentioned
Second electrode 15 be set to the corresponding surface of graphene nano bandwidth smaller area.By opening certain energy gap, make not
It is combined into double-heterostructure with width nanobelt, is adulterated by the electroluminescent PN to graphene, PN junction is formed, emits Terahertz
Wave.
The graphene terahertz transmitter of the present embodiment, by the way that graphene nanobelt is transferred in substrate, and successively shape
Graphene terahertz transmitter is made at first electrode and the second pole.The emission effciency of Terahertz is effectively improved as a result, together
When reduce equipment volume, THz wave can be generated under normal temperature conditions.
The present invention also provides a kind of graphene THz source transmitter production methods, as shown in Figure 4, comprising:
401, graphene nanobelt is transferred in substrate, and makes the graphene nanobelt absorption on the substrate.
During actual fabrication, above-mentioned graphene nanobelt is fabricated to the wide two sides narrow structure in middle part, such as Fig. 3 institute
Show, to form first electrode and second electrode in two sides.Above-mentioned substrate can be SiO2Substrate, in practice can also be as needed
The base material of better effect is replaced, the present embodiment is not limited thereof.
402, first electrode is formed on the partial region of the graphene nanobelt.
For example, above-mentioned first electrode can be copper electrode or aluminium electrode, and other materials production also can be used in practice
Above-mentioned first electrode, the present embodiment are not limited thereof.
403, insulating layer is formed on the graphene nanobelt and the substrate.
In a kind of enforceable mode, it can be deposited on above-mentioned graphene nano band and in the substrate of remainder
Insulating layer, the preferred thickness of insulating layer can be 100nm.The thickness of insulating layer can be adjusted according to the actual situation in actual fabrication,
The present embodiment is not limited thereof.
404, second electrode is formed on the partial region of the insulating layer.
It should be noted that above-mentioned second electrode is doped electrode, i.e., physical doping is carried out to above-mentioned second electrode,
To improve its carrier concentration.
The graphene terahertz transmitter production method of the present embodiment, by the way that graphene nanobelt is transferred in substrate,
And sequentially form first electrode and the second pole production graphene terahertz transmitter.The hair of Terahertz is effectively improved as a result,
Efficiency is penetrated, while reducing equipment volume, THz wave can be generated under normal temperature conditions.
For the manufacturing process that any of the above-described graphene terahertz transmitter is described in detail, to each step in Fig. 4 carry out with
Lower explanation.
Fig. 5 shows the flow diagram of graphene terahertz transmitter production method provided in an embodiment of the present invention, such as
Shown in Fig. 5, the graphene terahertz transmitter production method of the present embodiment, comprising:
501, the graphene nanobelt is transferred in the substrate using mechanical stripping method.
502, on the substrate by graphene nanobelt absorption.
For example, mechanical system can be used and press the graphene nanobelt, be adsorbed on it in substrate.
In a kind of enforceable mode, before carrying out above-mentioned step 501 and step 502, first graphene should be received
The position of rice band is positioned.For example, initial mark can be deposited first in the substrate, and initial mark is determined under microscope auxiliary
The positional relationship of will and target point can be accurately positioned out the relative position of single-layer graphene and label after repeatedly marking,
It plays an important role to the positioning of electron beam exposure from now on.
503, the spin coating photoresist on the graphene nano band, and electron beam exposure development treatment is carried out to photoresist,
Removal forms the photoresist that the first electrode corresponds to region.
For example, the mode that electron beam exposure can be used is exposed photoresist, etches away to form the first region
Photoresist on domain.
504, the first metal layer is deposited on the photoresist after electron beam exposure development treatment.
Specifically, the first metal layer is deposited on the coating of the photoresist above-mentioned after over etching.First electrode is just
Pole and cathode can be used not same material and be respectively deposited on corresponding position.
505, photoresist and the first metal layer on photoresist are removed, to form the first electrode.
In actual fabrication, chemical solution can be used and remove remaining photoresist, and remove and be deposited on remaining photoresist
First electrode metal layer, to form above-mentioned first electrode.
506, insulating layer is formed on the graphene nanobelt and the first electrode.
For example, the SiO of 100nm can be deposited on above-mentioned graphene nanobelt and first electrode2As insulating layer.
507, the spin coating photoresist on the insulating layer, and electron beam exposure development treatment is carried out to photoresist, remove shape
At the photoresist of the second electrode corresponding region.
For example, the mode that electron beam exposure can be used is exposed photoresist, etches away to form second electrode area
Photoresist on domain.
508, the depositing second metal layer on the photoresist after electron beam exposure development treatment.
Specifically, can on the coating of the above-mentioned photoresist after over etching depositing second metal layer.
509, photoresist and the second metal layer on photoresist are removed, to form the second electrode.
Above-mentioned second electrode forms double-heterostructure as doped electrode and above-mentioned first electrode.
510, encapsulated layer is formed in the second electrode and the insulating layer.
For example, SiO can be deposited in above-mentioned second electrode and insulating layer2As encapsulated layer, graphene is protected too
The device architecture of hertz transmitter.
The graphene terahertz transmitter production method of the present embodiment, by the way that graphene nanobelt is transferred in substrate,
And sequentially form first electrode and the second pole production graphene terahertz transmitter.The hair of Terahertz is effectively improved as a result,
Efficiency is penetrated, while reducing equipment volume, THz wave can be generated under normal temperature conditions.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, it does not separate the essence of the corresponding technical solution, and the claims in the present invention are limited
Fixed range.
Claims (10)
1. a kind of graphene terahertz transmitter characterized by comprising
Substrate and the graphene nanobelt being arranged in substrate, first electrode, insulating layer and second electrode；
The graphene nanobelt is located in the substrate；The first electrode is located at the graphene nanobelt partial region
On；The insulating layer is located on the graphene nanobelt target area, and the target area is the area of not set first electrode
Domain；The second electrode is located on partial insulative layer corresponding with the graphene nanobelt；
The middle part width of the graphene nanobelt is greater than the width on both sides.
2. graphene terahertz transmitter according to claim 1, which is characterized in that the graphene terahertz sources
Device, further includes: encapsulated layer；
The encapsulated layer is located on the second electrode and the insulating layer.
3. graphene terahertz transmitter according to claim 1 or 2, which is characterized in that the graphene nanobelt is
Single-layer graphene structure.
4. graphene terahertz transmitter according to claim 1, which is characterized in that
The second electrode is doped electrode.
5. graphene terahertz transmitter according to claim 1, which is characterized in that
Width is less than predetermined width in the middle part of the graphene nanobelt.
6. a kind of graphene terahertz transmitter production method, which is characterized in that the described method includes:
Graphene nanobelt is transferred in substrate, and makes the graphene nanobelt absorption on the substrate；
First electrode is formed on the partial region of the graphene nanobelt；
Insulating layer is formed on graphene nanobelt target area, the target area is the region of not set first electrode；
Second electrode is formed on the partial region of the insulating layer.
7. according to the method described in claim 6, it is characterized in that, the method also includes:
Encapsulated layer is formed in the second electrode and the insulating layer.
8. according to the method described in claim 6, it is characterized in that, described be transferred to graphene nanobelt in substrate, and making
The graphene nanobelt absorption on the substrate, specifically includes:
The graphene nanobelt is transferred in the substrate using mechanical stripping method；
On the substrate by graphene nanobelt absorption.
9. according to the method described in claim 6, it is characterized in that, the shape on the partial region of the graphene nanobelt
At first electrode, specifically include:
The spin coating photoresist on the graphene nano band, and electron beam exposure development treatment is carried out to photoresist, removal is formed
The first electrode corresponds to the photoresist in region；
The first metal layer is deposited on the photoresist after electron beam exposure development treatment；
Photoresist and the first metal layer on photoresist are removed, to form the first electrode.
10. according to the method described in claim 6, it is characterized in that, described form on the partial region of the insulating layer
Two electrodes, specifically include:
The spin coating photoresist on the insulating layer, and electron beam exposure development treatment is carried out to photoresist, removal forms described the
The photoresist of two electrode corresponding regions；
The depositing second metal layer on the photoresist after electron beam exposure development treatment；
Photoresist and the second metal layer on photoresist are removed, to form the second electrode.
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| CN108736980B (en) * | 2017-04-20 | 2020-09-08 | 清华大学 | Terahertz wave communication method |
| CN108281875A (en) * | 2017-12-20 | 2018-07-13 | 贵州民族大学 | A kind of light emitting diode of terahertz wave band |
| CN113451864A (en) * | 2021-06-25 | 2021-09-28 | 泉州慈光科技有限公司 | Terahertz emitter and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2602821A1 (en) * | 2011-12-07 | 2013-06-12 | Universität Augsburg | Graphene-based nanodevices for terahertz electronics |
| CN103337772A (en) * | 2013-07-03 | 2013-10-02 | 中国科学院上海微系统与信息技术研究所 | Terahertz wave generator based on graphene nanoribbon |
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| DE102008055100A1 (en) * | 2008-12-22 | 2010-07-01 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Unipolar heterojunction junction transistor |
| EP2807675B1 (en) * | 2012-01-23 | 2018-09-05 | The Regents of The University of Michigan | Photoconductive device with plasmonic electrodes |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2602821A1 (en) * | 2011-12-07 | 2013-06-12 | Universität Augsburg | Graphene-based nanodevices for terahertz electronics |
| CN103337772A (en) * | 2013-07-03 | 2013-10-02 | 中国科学院上海微系统与信息技术研究所 | Terahertz wave generator based on graphene nanoribbon |
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