CN105428521A - 集成霍尔电流传感器的功率半导体模块 - Google Patents

集成霍尔电流传感器的功率半导体模块 Download PDF

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CN105428521A
CN105428521A CN201510781571.8A CN201510781571A CN105428521A CN 105428521 A CN105428521 A CN 105428521A CN 201510781571 A CN201510781571 A CN 201510781571A CN 105428521 A CN105428521 A CN 105428521A
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magnetic core
power semiconductor
output electrode
current sensor
hall element
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CN105428521B (zh
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王玉林
滕鹤松
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Yangzhou Guoyang Electronic Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

一种集成霍尔电流传感器的功率半导体模块,包括输出电极、采样控制端子、底板、陶瓷基板、外壳,所述输出电极连接有平行于底板方向设置的输出电极臂,所述输出电极臂与陶瓷基板相连,所述输出电极臂上套有传感器磁芯,所述传感器磁芯具有一个朝上的磁芯开口,所述磁芯开口处插有一个引脚朝上的霍尔元件;所述外壳在位于磁芯开口上方的对应位置处设有插孔,所述霍尔元件的引脚从插孔中穿出。本发明将电流传感器集成在功率半导体模块的内部,增加了控制系统的集成度、小型化程度以及稳定性,且降低了后续使用成本。

Description

集成霍尔电流传感器的功率半导体模块
技术领域
本发明涉及电力电子领域,具体涉及集成霍尔电流传感器的功率半导体模块。
背景技术
功率模块是功率电子电力器件如金属氧化物半导体(功率MOS管)、绝缘栅型场效应晶体管(IGBT),快恢复二极管(FRD)按一定的功能组合封装成的电力开关模块,其主要用于电动汽车,光伏发电,风力发电,工业变频等各种场合下的功率转换。功率半导体模块的拓扑结构为单管、两单元、六单元等,可以根据需要组合成半桥、三相全桥等电路形式。在实际使用过程中,常常需要获取输出电流值。
传统功率半导体模块存在的一个缺陷就是不具备电流采样功能,不能对输出电流的大小直接进行测量,这样造成的问题就是,在需要测量输出电流时,需要在与交流输出电极相连的母排上安装电流传感器。从而将采样到的电信号传输给控制部分。但是,在母排上安装电流传感器占用空间较大,有时甚至需要将母排折弯来配合电流传感器的安装,这种方式不仅不利于系统小型化,而且安装麻烦、成本较高,且响应速度较慢。
发明内容
发明目的:针对上述问题,本发明旨在提供集成霍尔电流传感器的功率半导体模块。
技术方案:一种集成霍尔电流传感器的功率半导体模块,包括输出电极、采样控制端子、底板、陶瓷基板、外壳,所述输出电极连接有平行于底板方向设置的输出电极臂,所述输出电极臂与陶瓷基板相连,所述输出电极臂上套有传感器磁芯,所述传感器磁芯具有一个朝上的磁芯开口,所述磁芯开口处插有一个引脚朝上的霍尔元件;所述外壳在位于磁芯开口上方的对应位置处设有插孔,所述霍尔元件的引脚从插孔中穿出。
进一步的,所述插孔的尺寸不大于磁芯开口的尺寸。
进一步的,所述霍尔元件的引脚与采样控制端子一起焊接在驱动PCB板上。
进一步的,所述霍尔元件在磁芯开口处使用环氧胶或者粘结胶固定。
进一步的,所述输出电极臂与陶瓷基板通过超声波焊接方式或者邦定铝线方式相连。
有益效果:本发明将霍尔电流传感器集成在功率半导体模块的内部,简化了电流传感器的安装方式,更有利于控制器的集成及功率半导体模块的保护。同时,霍尔电流传感器的测量精度较高、测量频率范围较广并具有良好的隔离效果,使用环氧胶或者粘结胶固定霍尔元件的位置既灵活方便,又保证了霍尔元件的牢固性。本发明增加了控制系统的集成度、小型化程度以及稳定性,且降低了后续使用成本。
附图说明
图1是本发明的第一种连接方式的内部结构示意图;
图2是本发明的第二种连接方式的内部结构示意图;
图3是本发明的第一种连接方式的结构示意图;
图4是本发明的第二种连接方式的结构示意图。
具体实施方式
如图1所示,一种集成霍尔电流传感器的功率半导体模块,包括输出电极1、负电极2、正电极3、采样控制端子4、底板5、陶瓷基板6、外壳7,所述输出电极1连接有平行于底板5方向设置的输出电极臂8,所述输出电极臂8与陶瓷基板6相连,所述输出电极臂8上套有传感器磁芯9,使每相交流输出电极1通过一个传感器磁芯9。所述传感器磁芯9具有一个朝上的磁芯开口,磁芯的开口处为后续霍尔元件10的插入位置,霍尔元件10的引脚朝上。
如图3所示,为了配合该霍尔元件10的插入,所述外壳7在位于磁芯开口上方的对应位置处设有插孔11,所述霍尔元件10的引脚从插孔11中穿出。插孔11的尺寸不大于磁芯开口的尺寸。使得整个霍尔元件10能从插孔11中穿过。
霍尔元件10可以在功率半导体模块组装时插入磁芯开口,再安装外壳;也可以在功率半导体模块组装完成后,在外壳7的插孔11处插入,此时霍尔元件10与传感器磁芯9便组成了霍尔电流传感器;还可以先将霍尔元件10焊接在后续安装的驱动PCB板上,然后在功率半导体模块上安装驱动PCB板时,使霍尔元件10插入到外壳7的插孔11处,与传感器磁芯9组成霍尔电流传感器。
为了防止霍尔元件10移位,霍尔元件10在磁芯开口处使用环氧胶或者粘结胶固定。环氧胶或者粘结胶可以在霍尔元件10插入插孔11后从插孔11注入外壳7凝固,也可以先向插孔11内注入未固化的环氧胶或者粘结胶,再将霍尔元件10插入插孔11,凝固后即可保证霍尔元件10的位置固定及后续连接的可靠性。
电流流经输出电极1并在输出电极1的周围产生磁场,霍尔元件10通过检测该磁场的磁感应强度得到对应的电流值,并转化为电压信号传输给控制电路,在电流异常时,由控制电路通过采样控制端子关断功率器件,从而保护功率器件。
霍尔元件10的引脚可直接与采样控制端子4一起焊接在驱动PCB板上,实现了快速采样及稳定可靠连接。
功率半导体模块的输出电极1与陶瓷基板6的连接可以如图1和图3所示,采用超声波焊接工艺连接;也可以如图2和图4所示,采用邦定粗铝线来实现连接。
本发明将霍尔电流传感器集成在功率半导体模块的内部,增加了控制系统的集成度、小型化程度、以及稳定性,且降低了后续使用成本。

Claims (5)

1.一种集成霍尔电流传感器的功率半导体模块,包括输出电极(1)、采样控制端子(4)、底板(5)、陶瓷基板(6)、外壳(7),所述输出电极(1)连接有平行于底板(5)方向设置的输出电极臂(8),所述输出电极臂(8)与陶瓷基板(6)相连,其特征在于:所述输出电极臂(8)上套有传感器磁芯(9),所述传感器磁芯(9)具有一个朝上的磁芯开口,所述磁芯开口处插有一个引脚朝上的霍尔元件(10);所述外壳(7)在位于磁芯开口上方的对应位置处设有插孔(11),所述霍尔元件(10)的引脚从插孔(11)中穿出。
2.根据权利要求1所述的集成霍尔电流传感器的功率半导体模块,其特征在于,所述插孔(11)的尺寸不大于磁芯开口的尺寸。
3.根据权利要求1所述的集成霍尔电流传感器的功率半导体模块,其特征在于,所述霍尔元件(10)的引脚与采样控制端子(4)一起焊接在驱动PCB板上。
4.根据权利要求1所述的集成霍尔电流传感器的功率半导体模块,其特征在于,所述霍尔元件(10)在磁芯开口处使用环氧胶或者粘结胶固定。
5.根据权利要求1所述的集成霍尔电流传感器的功率半导体模块,其特征在于,所述输出电极臂(8)与陶瓷基板(6)通过超声波焊接方式或者邦定铝线方式相连。
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Cited By (5)

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Publication number Priority date Publication date Assignee Title
CN105789192A (zh) * 2016-05-03 2016-07-20 扬州国扬电子有限公司 一种设有电极大臂的功率模块
CN108682667A (zh) * 2018-05-23 2018-10-19 杭州士兰微电子股份有限公司 半导体封装结构
CN108922871A (zh) * 2018-05-23 2018-11-30 杭州士兰微电子股份有限公司 半导体封装结构及其制造方法
CN111562435A (zh) * 2020-05-28 2020-08-21 南京国信能源有限公司 新型充电桩用直流电能表
CN112564476A (zh) * 2020-12-01 2021-03-26 复旦大学 集成电流采样与emi滤波的三相碳化硅功率半导体模块

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CN104134655A (zh) * 2013-05-03 2014-11-05 英飞凌科技股份有限公司 具有集成电流传感器的功率模块
CN205141028U (zh) * 2015-11-13 2016-04-06 扬州国扬电子有限公司 集成霍尔电流传感器的功率半导体模块

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CN104134655A (zh) * 2013-05-03 2014-11-05 英飞凌科技股份有限公司 具有集成电流传感器的功率模块
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Publication number Priority date Publication date Assignee Title
CN105789192A (zh) * 2016-05-03 2016-07-20 扬州国扬电子有限公司 一种设有电极大臂的功率模块
CN105789192B (zh) * 2016-05-03 2018-11-30 扬州国扬电子有限公司 一种设有电极大臂的功率模块
CN108682667A (zh) * 2018-05-23 2018-10-19 杭州士兰微电子股份有限公司 半导体封装结构
CN108922871A (zh) * 2018-05-23 2018-11-30 杭州士兰微电子股份有限公司 半导体封装结构及其制造方法
CN108682667B (zh) * 2018-05-23 2024-03-29 杭州士兰微电子股份有限公司 半导体封装结构
CN108922871B (zh) * 2018-05-23 2024-03-29 杭州士兰微电子股份有限公司 半导体封装结构及其制造方法
CN111562435A (zh) * 2020-05-28 2020-08-21 南京国信能源有限公司 新型充电桩用直流电能表
CN112564476A (zh) * 2020-12-01 2021-03-26 复旦大学 集成电流采样与emi滤波的三相碳化硅功率半导体模块

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Application publication date: 20160323

Assignee: No.55 Inst., China Electronic Science and Technology Group Corp.

Assignor: YANGZHOU GUOYANG ELECTRONIC CO., LTD.

Contract record no.: 2018320000201

Denomination of invention: Power semiconductor module integrated with Hall current sensor

Granted publication date: 20171027

License type: Common License

Record date: 20181012