CN105334367A - 集成电流传感器磁芯的功率半导体模块 - Google Patents

集成电流传感器磁芯的功率半导体模块 Download PDF

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CN105334367A
CN105334367A CN201510781350.0A CN201510781350A CN105334367A CN 105334367 A CN105334367 A CN 105334367A CN 201510781350 A CN201510781350 A CN 201510781350A CN 105334367 A CN105334367 A CN 105334367A
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magnetic core
power semiconductor
output electrode
current sensor
semiconductor modular
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CN105334367B (zh
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王玉林
滕鹤松
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Yangzhou Guoyang Electronic Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires

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Abstract

一种集成电流传感器磁芯的功率半导体模块，包括输出电极、采样控制端子、底板、陶瓷基板、外壳，所述输出电极连接有平行于底板方向设置的输出电极臂，所述输出电极臂与陶瓷基板相连，所述输出电极臂上套有传感器磁芯，所述传感器磁芯具有一个朝上的磁芯开口，所述外壳在位于磁芯开口上方的对应位置处设有插孔。本发明将电流传感器磁芯集成在功率半导体模块的内部，在需要进行电流采样时，仅需在磁芯开口处插入霍尔元件即可，省略了现有技术中在功率半导体模块外部安装电流传感器的步骤，增加了控制系统的集成度、小型化程度以及稳定性，且降低了后续使用成本。

Description

集成电流传感器磁芯的功率半导体模块
技术领域
本发明涉及电力电子领域，具体涉及集成电流传感器磁芯的功率半导体模块。
背景技术
功率半导体模块的拓扑结构为单管、两单元、六单元等，可以根据需要组合成半桥、三相全桥等电路形式。在实际使用过程中，常常需要获取输出电流值。
传统功率半导体模块不具备电流采样功能，因此，在需要测量输出电流时，需要将功率半导体模块的交流输出电极与母排相连，并在母排上安装电流传感器，从而将采样到的电信号传输给控制部分。
这种方案存在的缺陷是：在母排上安装电流传感器占用空间较大，有时甚至需要将母排折弯来配合电流传感器的安装，在不需要测量电流值的时候又需要繁琐的拆除线路，这种方式不仅不利于系统小型化，而且安装麻烦、成本较高，且响应速度较慢。
发明内容
发明目的：针对上述问题，本发明旨在提供一种集成电流传感器磁芯的功率半导体模块。
技术方案：一种集成电流传感器磁芯的功率半导体模块，包括输出电极、采样控制端子、底板、陶瓷基板、外壳，所述输出电极连接有平行于底板方向设置的输出电极臂，所述输出电极臂与陶瓷基板相连，所述输出电极臂上套有传感器磁芯，所述传感器磁芯具有一个朝上的磁芯开口，所述外壳在位于磁芯开口上方的对应位置处设有插孔。
进一步的，所述输出电极臂与陶瓷基板通过超声波焊接方式或者邦定铝线方式相连。
进一步的，所述插孔的尺寸不大于磁芯开口的尺寸。
进一步的，所述传感器磁芯为霍尔电流传感器磁芯。
进一步的，所述传感器磁芯为开环霍尔电流传感器磁芯。
有益效果：本发明将电流传感器磁芯集成在功率半导体模块的内部，在需要进行电流采样时，仅需在磁芯开口处插入霍尔元件即可，省略了现有技术中在功率半导体模块外部安装电流传感器的步骤，更有利于控制器的集成及功率半导体模块的保护。同时，霍尔电流传感器的测量精度较高、测量频率范围较广并具有良好的隔离效果，开环霍尔电流传感器能够满足较大电流的测量需求。在无需进行电流采样时，可以实现功率半导体模块的正常使用并且不影响外形美观。本发明增加了控制系统的集成度、小型化程度以及稳定性，且降低了后续使用成本。
附图说明
图1是本发明的第一种连接方式的内部结构示意图；
图2是本发明的第二种连接方式的内部结构示意图；
图3是本发明的第一种连接方式的结构示意图；
图4是本发明的第二种连接方式的结构示意图；
图5是本发明实施例的结构示意图。
具体实施方式
如图1所示，一种集成电流传感器磁芯的功率半导体模块，包括输出电极1、负电极2、正电极3、采样控制端子4、底板5、陶瓷基板6、外壳7，所述输出电极1连接有平行于底板5方向设置的输出电极臂8，所述输出电极臂8与陶瓷基板6相连，所述输出电极臂8上套有传感器磁芯9，所述传感器磁芯9为开环霍尔电流传感器磁芯。使每相交流输出电极1通过一个传感器磁芯9。所述传感器磁芯9具有一个朝上的磁芯开口。
如图5所示，当需要进行电流采样时，在磁芯的开口处插入相匹配的霍尔元件11，霍尔元件11的引脚朝上。
如图3所示，为了配合后续霍尔元件11的插入，所述外壳7在位于磁芯开口上方的对应位置处设有插孔10，所述霍尔元件11的引脚从插孔10中穿出。插孔10的尺寸不大于磁芯开口的尺寸。使得整个霍尔元件11能从插孔10中穿过。
霍尔元件11可以在功率半导体模块组装时插入磁芯开口，再安装外壳；也可以在功率半导体模块组装完成后，在外壳7的插孔10处插入，此时霍尔元件11与传感器磁芯9便组成了霍尔电流传感器；还可以先将霍尔元件11焊接在后续安装的驱动PCB板上，然后在功率半导体模块上安装驱动PCB板时，使霍尔元件11插入到外壳7的插孔10处，与传感器磁芯9组成霍尔电流传感器。
为了防止霍尔元件11移位，霍尔元件11在磁芯开口处使用环氧胶或者粘结胶固定。环氧胶或者粘结胶可以在霍尔元件11插入插孔10后从插孔10注入外壳7凝固，也可以先向插孔10内注入未固化的环氧胶或者粘结胶，再将霍尔元件11插入插孔10，凝固后即可保证霍尔元件11的位置固定及后续连接的可靠性。
电流流经输出电极1并在输出电极1的周围产生磁场，霍尔元件11通过检测该磁场的磁感应强度得到对应的电流值，并转化为电压信号传输给控制电路，在电流异常时，由控制电路通过采样控制端子4关断功率器件，从而保护功率器件。
霍尔元件11的引脚可直接与采样控制端子4一起焊接在驱动PCB板上，实现了快速采样及稳定可靠连接。
功率半导体模块的输出电极1与陶瓷基板6的连接可以如图1和图3所示，采用超声波焊接工艺连接；也可以如图2和图4所示，采用邦定粗铝线来实现连接。
在无需进行电流采样时，本发明可以实现功率半导体模块的正常使用并且不影响外形美观。
本发明将电流传感器磁芯集成在功率半导体模块的内部，在需要进行电流采样时，仅需在磁芯开口处插入霍尔元件即可，省略了现有技术中在功率半导体模块外部安装电流传感器的步骤，增加了控制系统的集成度、小型化程度、以及稳定性，且降低了后续使用成本。

Claims (5)

1.一种集成电流传感器磁芯的功率半导体模块，包括输出电极(1)、采样控制端子(4)、底板(5)、陶瓷基板(6)、外壳(7)，所述输出电极(1)连接有平行于底板(5)方向设置的输出电极臂(8)，所述输出电极臂(8)与陶瓷基板(6)相连，其特征在于：所述输出电极臂(8)上套有传感器磁芯(9)，所述传感器磁芯(9)具有一个朝上的磁芯开口，所述外壳(7)在位于磁芯开口上方的对应位置处设有插孔(10)。
2.根据权利要求1所述的集成电流传感器的功率半导体模块，其特征在于，所述输出电极臂(8)与陶瓷基板(6)通过超声波焊接方式或者邦定铝线方式相连。
3.根据权利要求1所述的集成电流传感器磁芯的功率半导体模块，其特征在于，所述插孔(10)的尺寸不大于磁芯开口的尺寸。
4.根据权利要求1所述的集成电流传感器磁芯的功率半导体模块，其特征在于，所述传感器磁芯(9)为霍尔电流传感器磁芯。
5.根据权利要求1所述的集成电流传感器磁芯的功率半导体模块，其特征在于，所述传感器磁芯(9)为开环霍尔电流传感器磁芯。
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CN105789160A (zh) * 2016-05-03 2016-07-20 扬州国扬电子有限公司 一种组合式电极及其三电平大功率模块
CN109888523A (zh) * 2017-12-06 2019-06-14 Zf 腓德烈斯哈芬股份公司 连接机构、功率电子设备和制造功率电子设备的方法
CN112564476A (zh) * 2020-12-01 2021-03-26 复旦大学 集成电流采样与emi滤波的三相碳化硅功率半导体模块

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CN105789160A (zh) * 2016-05-03 2016-07-20 扬州国扬电子有限公司 一种组合式电极及其三电平大功率模块
CN109888523A (zh) * 2017-12-06 2019-06-14 Zf 腓德烈斯哈芬股份公司 连接机构、功率电子设备和制造功率电子设备的方法
CN109888523B (zh) * 2017-12-06 2021-12-31 Zf 腓德烈斯哈芬股份公司 连接机构、功率电子设备和制造功率电子设备的方法
CN112564476A (zh) * 2020-12-01 2021-03-26 复旦大学 集成电流采样与emi滤波的三相碳化硅功率半导体模块

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