CN105428494A - Light emitting diode package structure - Google Patents
Light emitting diode package structure Download PDFInfo
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- CN105428494A CN105428494A CN201410442074.0A CN201410442074A CN105428494A CN 105428494 A CN105428494 A CN 105428494A CN 201410442074 A CN201410442074 A CN 201410442074A CN 105428494 A CN105428494 A CN 105428494A
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- electrode
- weld zone
- spacer region
- package structure
- emitting diode
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Abstract
A light emitting diode package structure comprises a substrate and a light emitting diode chip which is arranged on the substrate. A first weld zone and a second weld zone are separately arranged on the substrate. The light emitting diode chip comprises a first electrode and a second electrode which are separately arranged. The first electrode and the second electrode are symmetrically arranged, and furthermore the area of the first electrode is same with that of the second electrode. The first electrode and the second electrode are respectively welded with the first weld zone and the second weld zone correspondingly.
Description
Technical field
The present invention relates to a kind of semiconductor element, particularly relate to a kind of light-emitting diode.
Background technology
Traditional package structure for LED comprises substrate and is arranged on the light-emitting diode chip for backlight unit on substrate.Described substrate comprises the weld zone of welding light-emitting diode chip for backlight unit.Described light-emitting diode chip for backlight unit is easy to depart from weld zone when being soldered to the weld zone of substrate, causes the quality of whole package structure for LED to decline.
Summary of the invention
In view of this, the package structure for LED providing a kind of quality higher is necessary.
A kind of package structure for LED, comprise substrate and be arranged on the light-emitting diode chip for backlight unit on substrate, described substrate is arranged at intervals with the first weld zone and the second weld zone, described light-emitting diode chip for backlight unit comprises spaced first electrode and the second electrode, described first electrode and the second electrode are symmetrical arranged and area equation, and described first electrode and the second electrode are respectively with described first weld zone and the second weld zone is corresponding welds.
A kind of package structure for LED, comprise substrate and be arranged on the light-emitting diode chip for backlight unit on substrate, described substrate comprises the first weld zone, the second weld zone and the 3rd weld zone, described light-emitting diode chip for backlight unit comprises and described first, second and corresponding the first electrode, the second electrode and the third electrode welded in the 3rd weld zone, and described first electrode and third electrode are arranged on the relative both sides of the second electrode symmetrically and the area of described first electrode equals the area of described third electrode.
In package structure for LED of the present invention, electrode due to described light-emitting diode chip for backlight unit is symmetrical arranged and area equation, thus make light-emitting diode chip for backlight unit be soldered to light-emitting diode chip for backlight unit stress balance and equalising torque in the process of described substrate and not easily depart from from the weld zone of described substrate, improve the quality of package structure for LED.
Accompanying drawing explanation
Fig. 1 is the scheme of installation of the package structure for LED of first embodiment of the invention.
Fig. 2 is the vertical view of the substrate of the package structure for LED shown in Fig. 1.
Fig. 3 is the schematic bottom view of the light-emitting diode chip for backlight unit of the package structure for LED shown in Fig. 1.
Fig. 4 is the scheme of installation of the package structure for LED of second embodiment of the invention.
Fig. 5 is the vertical view of the substrate of the package structure for LED shown in Fig. 4.
Fig. 6 is the schematic bottom view of the light-emitting diode chip for backlight unit of the package structure for LED shown in Fig. 4.
Fig. 7 is the vertical view of another substrate of the package structure for LED shown in Fig. 4.
Fig. 8 is the vertical view of the substrate of the package structure for LED of the third embodiment of the present invention.
Fig. 9 is the schematic bottom view of the light-emitting diode chip for backlight unit of the package structure for LED of the third embodiment of the present invention.
Main element symbol description
| Package structure for LED | 100，100a |
| Substrate | 10，10a |
| First weld zone | 11，11a |
| Second weld zone | 12，12a |
| 3rd weld zone | 13，13a |
| First spacer region | 111，111a |
| Second spacer region | 112，112a |
| 3rd spacer region | 113a |
| Insulating material | 120 |
| Light-emitting diode chip for backlight unit | 20，20a |
| First electrode | 21，21a |
| Second electrode | 22，22a |
| Third electrode | 23，23a |
| First interval trough | 221，221a |
| Second interval trough | 222，222a |
| 3rd interval trough | 223a |
| First anti-welding zone | 201a |
| Second anti-welding zone | 202a |
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
First embodiment
Refer to Fig. 1, the package structure for LED 100 of the present embodiment comprises substrate 10 and setting light-emitting diode chip for backlight unit 20 on the substrate 10, described substrate 10 is arranged at intervals with the first weld zone 11 and the second weld zone 12, described light-emitting diode chip for backlight unit 20 comprises spaced first electrode 21 and the second electrode 22, described first electrode 21 and the second electrode 22 are symmetrical arranged and area equation, and described first electrode 21 and the second electrode 22 are respectively with described first weld zone 11 and the second weld zone 12 is corresponding welds.
Described substrate 10 can be any one can carry out wires design plate body on its surface or inside.In the present embodiment, described substrate 10 can be common printed circuit board (PCB), flexible PCB, PLCC (PlasticLeadedChipCarrier) or ceramic substrate.
Described substrate 10 comprises solder side 101 and the bottom surface 102 relative with this solder side 101.Described first weld zone 12, weld zone 11, second is separately positioned on the solder side 101 of substrate 10.Preferably, described first weld zone 11 and the second weld zone 12 are symmetrical arranged, and the area of the first weld zone 11 equals the area of described second weld zone 12.
Refer to Fig. 2, between described first weld zone 11 and the second weld zone 12, form the first spacer region 111.Insulating material 120 can be filled with in described first spacer region 111.Described insulating material 120 can be made up of anti-welding or that repellency is high material.
Refer to Fig. 1 and Fig. 3, the first electrode 21 of described light-emitting diode chip for backlight unit 20 and the second electrode 22 are arranged with the first weld zone 11 of described substrate 10 and the second weld zone 12 one_to_one corresponding respectively.The size of the size of described first electrode 21 and the second electrode 22 and the first weld zone 11 of described substrate 10 and the second weld zone 12 is suitable.
The first interval trough 221 is formed between described first electrode 21 and described second electrode 22.Insulating material 120 can be filled with in described first interval trough 221.Described first interval trough 221 is corresponding with the first spacer region 111 on substrate 10 to be arranged.
Described light-emitting diode chip for backlight unit 20 is soldered in the process of described substrate 10, the solder of melting can be subject to the first weld zone 12, weld zone 11, second on substrate 10 and the first electrode 21 of light-emitting diode chip for backlight unit 20 and the attraction of the second electrode 22, and is subject to the repulsion of the first spacer region 111 and the first interval trough 221.Because the first electrode 21 of light-emitting diode chip for backlight unit 20 and the second electrode 22 are arranged on the relative both sides of the first interval trough 221 and area equation symmetrically, thus make light-emitting diode chip for backlight unit 20 stress balance and equalising torque in the process of welding, and then make light-emitting diode chip for backlight unit 20 can not from described first weld zone 11, second weld zone 12 departs from, also be, first electrode 21 of light-emitting diode chip for backlight unit 20, second electrode 22 can be soldered on the first corresponding weld zone 11 and the second weld zone 12 just over the ground, improve the quality of whole package structure for LED 100.
Second embodiment
Refer to Fig. 4, in package structure for LED 100a in the present embodiment, described light-emitting diode chip for backlight unit 20a comprises the first electrode 21a, the second electrode 22a and third electrode 23a, described first electrode 21a and third electrode 23a is arranged on the relative both sides of described second electrode 22a symmetrically, and the area of described first electrode 21a equals the area of described third electrode 23a.
Refer to Fig. 6, between described first electrode 21a and described second electrode 22a, form the first interval trough 221a.The second interval trough 222a is formed between described second electrode 22a and described third electrode 23a.Insulating material 120 can be filled with in described first interval trough 221a and described second interval trough 222a.
Correspondingly, refer to Fig. 5, the solder side 101a of described substrate 10a is provided with the first weld zone 11a, the second weld zone 12a and the 3rd weld zone 13a.Described first weld zone 11a, the second weld zone 12a and the 3rd weld zone 13a respectively with described first electrode 21a, the second electrode 22a and third electrode 23a is corresponding arranges.The size of the size of described first weld zone 11a, the second weld zone 12a and the 3rd weld zone 13a and described first electrode 21a, the second electrode 22a and third electrode 23a is suitable.
Form the first spacer region 111a between described first weld zone 11a and the second weld zone 12a, between described second weld zone 12a and described 3rd weld zone 13a, form the second spacer region 112a.Described first spacer region 111a and described second spacer region 112a are respectively with described first interval trough 221a and the second interval trough 222a is corresponding arranges.
Described light-emitting diode chip for backlight unit 20a is soldered in the process of substrate 10a, the solder of melting can be subject to the first weld zone 11a, second weld zone 12a, 3rd weld zone 13a and the first electrode 21a, the attraction of the second electrode 22a and third electrode 23a, and be subject to the first spacer region 111a, second spacer region 112a and the first interval trough 221a, the repulsion of the second interval trough 222a, because the first electrode 21a of described light-emitting diode chip for backlight unit 20 and third electrode 23a is arranged on the relative both sides of the second electrode 22a symmetrically, and the area equation of the first electrode 21a and third electrode 23a, thus make described light-emitting diode chip for backlight unit 20a stress balance in the process being soldered to substrate 10a, the first weld zone 11a not easily on substrate 10a, second weld zone 12a and the 3rd weld zone 13a departs from, namely light-emitting diode chip for backlight unit 20a is made to be soldered to just over the ground on substrate 10a.
Refer to Fig. 7, be not easy to other regions flowed to from the first weld zone 11a and the 3rd weld zone 13a on substrate 10a to make the solder of melting, the edge away from light-emitting diode chip for backlight unit 20a of described first weld zone 11a and the 3rd weld zone 13a arranges the first anti-welding zone 201a and the second anti-welding zone 202a respectively.The solder of melting is subject to the effect of the repulsion of the first anti-welding zone 201a and the first spacer region 111a and concentrates in the first weld zone 11a, and the solder of melting is subject to the effect of the repulsion of the second anti-welding zone 202a and the second spacer region 112a and concentrates in the 3rd weld zone 13a.In the present embodiment, because described first weld zone 11a and the 3rd weld zone 13a is rectangle, therefore, described first anti-welding zone 201a and the second anti-welding zone 202a can be arranged to L shape, to coordinate with the corner of the first weld zone 11a and the 3rd weld zone 13a.
3rd embodiment
Refer to Fig. 8, in the present embodiment, described substrate 10a comprises the 3rd spacer region 113a further.Described 3rd spacer region 113a runs through described first weld zone 11a, the second weld zone 12a and the 3rd weld zone 13a to be divided equally along the middle part of described first weld zone 11a, the second weld zone 12a and the 3rd weld zone 13a.
Refer to Fig. 9, correspondingly, described light-emitting diode chip for backlight unit 20a comprises the three interval trough 223a corresponding to the 3rd spacer region 113a of described substrate 10a further.Described 3rd interval trough 223a runs through described first electrode 21a, the second electrode 22a and third electrode 23a to be divided equally along the middle part of described first electrode 21a, the second electrode 22a and third electrode 23a.
Be understandable that, for the person of ordinary skill of the art, other various corresponding change and distortion can be made by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (10)
1. a package structure for LED, comprise substrate and be arranged on the light-emitting diode chip for backlight unit on substrate, described substrate is arranged at intervals with the first weld zone and the second weld zone, described light-emitting diode chip for backlight unit comprises spaced first electrode and the second electrode, described first electrode and the second electrode are symmetrical arranged and area equation, and described first electrode and the second electrode are respectively with described first weld zone and the second weld zone is corresponding welds.
2. package structure for LED as claimed in claim 1, is characterized in that: form the first interval trough between described first electrode and the second electrode, is filled with insulating material in described first interval trough.
3. package structure for LED as claimed in claim 2, it is characterized in that: form the first spacer region between described first weld zone and the second weld zone, described first spacer region is corresponding with described first interval trough to be arranged.
4. package structure for LED as claimed in claim 3, is characterized in that: be filled with insulating material in described first spacer region.
5. a package structure for LED, comprise substrate and be arranged on the light-emitting diode chip for backlight unit on substrate, described substrate comprises the first weld zone, the second weld zone and the 3rd weld zone, described light-emitting diode chip for backlight unit comprises and described first, second and corresponding the first electrode, the second electrode and the third electrode welded in the 3rd weld zone, and described first electrode and third electrode are arranged on the relative both sides of the second electrode symmetrically and the area of described first electrode equals the area of described third electrode.
6. package structure for LED as claimed in claim 5, it is characterized in that: between described first electrode and the second electrode, form the first interval trough, form the second interval trough between described second electrode and third electrode, between described first interval trough and the second interval trough, be filled with insulating material.
7. package structure for LED as claimed in claim 6, it is characterized in that: between described first weld zone and the second weld zone, form the first spacer region, form the second spacer region between described second weld zone and the 3rd weld zone, in described first spacer region and the second spacer region, be filled with insulating material.
8. package structure for LED as claimed in claim 5, is characterized in that: described first weld zone and the 3rd weld zone form the first anti-welding zone and the second anti-welding zone respectively away from the edge of described light-emitting diode chip for backlight unit.
9. package structure for LED as claimed in claim 6, is characterized in that: described first spacer region and the 3rd weld zone rectangular, described first anti-welding zone and the second anti-welding zone L-shaped.
10. the package structure for LED as described in claim 4 or 6, it is characterized in that: described substrate comprises the 3rd spacer region further, described 3rd spacer region is perpendicular to described first spacer region and the second spacer region and run through along the middle part of described first spacer region and the middle part of the second spacer region and divide described first weld zone equally, second weld zone and the 3rd weld zone, described light-emitting diode chip for backlight unit comprises three interval trough corresponding to the 3rd spacer region of described substrate further, described 3rd interval trough is perpendicular to described first interval trough and the second interval trough, and run through along the middle part of described first interval trough and the middle part of the second interval trough and divide described first weld part equally, second weld part and the 3rd weld part.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410442074.0A CN105428494A (en) | 2014-09-02 | 2014-09-02 | Light emitting diode package structure |
| TW103133021A TW201611345A (en) | 2014-09-02 | 2014-09-24 | Light emitting diode package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410442074.0A CN105428494A (en) | 2014-09-02 | 2014-09-02 | Light emitting diode package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105428494A true CN105428494A (en) | 2016-03-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410442074.0A Pending CN105428494A (en) | 2014-09-02 | 2014-09-02 | Light emitting diode package structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105428494A (en) |
| TW (1) | TW201611345A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980077A (en) * | 2017-12-25 | 2019-07-05 | 晶元光电股份有限公司 | A kind of light-emitting component and its light emitting device |
| US11355723B2 (en) | 2017-12-25 | 2022-06-07 | Epistar Corporation | Light-emitting element and light-emitting device comprising the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101331622A (en) * | 2005-12-19 | 2008-12-24 | 昭和电工株式会社 | Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting d |
| US20100117114A1 (en) * | 2008-11-13 | 2010-05-13 | Ryo Suzuki | Semiconductor light-emitting apparatus and method of fabricating the same |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN103606613A (en) * | 2013-11-12 | 2014-02-26 | 华灿光电(苏州）有限公司 | Flip-chip light emitting diode with symmetrical electrodes, and preparation method thereof |
-
2014
- 2014-09-02 CN CN201410442074.0A patent/CN105428494A/en active Pending
- 2014-09-24 TW TW103133021A patent/TW201611345A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101331622A (en) * | 2005-12-19 | 2008-12-24 | 昭和电工株式会社 | Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting d |
| US20100117114A1 (en) * | 2008-11-13 | 2010-05-13 | Ryo Suzuki | Semiconductor light-emitting apparatus and method of fabricating the same |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN103606613A (en) * | 2013-11-12 | 2014-02-26 | 华灿光电(苏州）有限公司 | Flip-chip light emitting diode with symmetrical electrodes, and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980077A (en) * | 2017-12-25 | 2019-07-05 | 晶元光电股份有限公司 | A kind of light-emitting component and its light emitting device |
| US11355723B2 (en) | 2017-12-25 | 2022-06-07 | Epistar Corporation | Light-emitting element and light-emitting device comprising the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201611345A (en) | 2016-03-16 |
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Application publication date: 20160323 |
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