CN105428384B - A kind of image sensor and its manufacturing method - Google Patents
A kind of image sensor and its manufacturing method Download PDFInfo
- Publication number
- CN105428384B CN105428384B CN201510999415.9A CN201510999415A CN105428384B CN 105428384 B CN105428384 B CN 105428384B CN 201510999415 A CN201510999415 A CN 201510999415A CN 105428384 B CN105428384 B CN 105428384B
- Authority
- CN
- China
- Prior art keywords
- image sensor
- semiconductor substrate
- hole
- metal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000010410 layer Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 230000005693 optoelectronics Effects 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 239000011229 interlayer Substances 0.000 claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 239000003086 colorant Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 34
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052794 bromium Inorganic materials 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- QUSNBJAOOMFDIB-UHFFFAOYSA-O ethylaminium Chemical compound CC[NH3+] QUSNBJAOOMFDIB-UHFFFAOYSA-O 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- 239000011630 iodine Substances 0.000 claims description 6
- 229910052740 iodine Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000000725 suspension Substances 0.000 claims 2
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention belongs to semiconductor integrated circuit manufacturing process technology field, a kind of image sensor and its manufacturing method are disclosed comprising semiconductor substrate, interlayer dielectric layer, contact electrode, perovskite optoelectronic film, passivation layer and three primary colours filter coating.The present invention makes photoelectric conversion unit be detached with other functional units by the introducing of perovskite optoelectronic film, and the two-dimension plane structure of conventional CMOS image sensor is optimized to three-dimensional laminated construction.Image sensor proposed by the present invention based on perovskite optoelectronic film can be with 100% fill factor, substantially reduce chip size simultaneously, in addition, chip need not take into account the technological requirement of the extremely low noise of silicon photoelectric diode again in the production process, technological requirement can be reduced and significantly reduce cost.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing process technology field, it is related to a kind of image sensor and its manufacturer
Method.
Background technology
Imaging sensor is the important component for forming digital camera.According to the difference of element, CCD can be divided into
(Charge Coupled Device, charge coupled cell) and CMOS (Complementary Metal-
OxideSemiconductor, metal oxide semiconductor device) two major classes.
The pixel sensitivity of one of the important performance indicator of cmos image sensor mainly by fill factor (photosensitive area with
The ratio between entire elemental area) it determines with the product of quantum efficiency (quantity of the electronics generated by the photon of bombardment screen).
In cmos image sensors, in order to realize the noise objective that may be compared favourably with CCD converter and level of sensitivity, cmos image
Active pixel is applied in sensor.Meanwhile cmos image sensor uses CMOS integrated circuit technology processing procedures, it can be by pixel battle array
Row photosensitive structure and other CMOS simulations, digital circuit are integrated on same chip, highly integrated not only to reduce complete machine chip
Quantity, reduces Overall Power Consumption and packaging cost, and the connection of chip interior direct signal also help signal transmission quality and
Speed, to improve the quality of image conversion.The higher sensitivity that is possessed due to cmos image sensor, shorter exposure time and
The Pixel Dimensions increasingly reduced, therefore, cmos image sensor are mainstream technologys currently on the market.
But in recent years, as solid state image sensor Pixel Dimensions are smaller and smaller, light absorption area also subtracts therewith
Small, due to the presence of active reading circuit, the fill factor of silicon photoelectric diode persistently reduces, device signal-to-noise ratio degradation.In addition,
Due to the influence of metal interconnection wire, only portions incident luminous energy enters photodiode area, further reduced image biography
The performance of sensor.
Meanwhile cmos image sensor is a kind of SoC chip of modulus mixing, because there is not different function units in chip
Same technology requirement reads analog circuit and needs larger scanning voltage if photodiode requires extremely low noise, and digital
Circuit then requires arithmetic speed quickly, it is difficult to meet being required for different function units on same technology platform.It can only
The performance of different units circuit is done into some choices, the cost of chip is also increased while reducing device performance.
Therefore, it is urgent to provide a kind of image sensor and its manufacturing methods by those skilled in the art, improve fill factor, contracting
Small chip size reduces technological requirement, while compatible with existing CMOS technology, improves the performance of image sensor.
Invention content
Technical problem to be solved by the invention is to provide a kind of image sensor and its manufacturing methods, improve filling system
Number reduces chip size, reduces technological requirement, while compatible with existing CMOS technology, improves the performance of image sensor.
In order to solve the above technical problem, the present invention provides a kind of image sensor, the image sensor includes：
Semiconductor substrate has flying capacitor and transistor in the semiconductor substrate；
Interlayer dielectric layer, the interlayer dielectric layer are set to the upper surface of the semiconductor substrate, and the interlayer dielectric layer
It is interior that there is multilayer interconnection line and the through-hole filled with metal；
Electrode is contacted, is distributed on the interlayer dielectric layer in array in the horizontal direction, and adjacent contact electrode
Between with predetermined width interval；
Perovskite optoelectronic film is covered on the contact electrode, to form the photosensitive area of imaging sensor；
Passivation layer is covered on the perovskite optoelectronic film, to completely cut off air and water；
Three primary colours filter coating is set to the upper surface of the passivation layer.
Preferably, the semiconductor substrate is integrated with reading circuit unit, analog signal amplifying unit, analog-to-digital conversion list
Member, digital processing element and control unit.
The present invention also provides a kind of methods of the above-mentioned image sensor of manufacture, which is characterized in that includes the following steps：
Step S01 is provided semi-conductive substrate, and is formed on the semiconductor substrate using the preceding road manufacture crafts of CMOS
Flying capacitor and transistor；
Step S02, interlayer dielectric layer on the semiconductor substrate, and make multilayer interconnection line and through-hole；
Step S03 fills metal in the through-hole, and removes the outer excess metal of through-hole；
Step S04, Deposit contact electrode, and it is electrode patterning to the contact, so that the contact electrode is in horizontal array
Column is distributed；
Step S05 deposits perovskite optoelectronic film on the contact electrode, and gone using lithography and etching technique unless
The perovskite optoelectronic film of photosensitive region；
Step S06, the deposit passivation layer on the perovskite optoelectronic film, and three primary colours filter is formed on the passivation layer
Light film.
Preferably, in step S02, the material of the interlayer dielectric layer is silica, fluorine-doped silica, carbon dope oxidation
Silicon, aluminium oxide, hafnium oxide, zirconium oxide or lanthana.
Preferably, in step S03, the material of the metal is tungsten, aluminium, titanium, titanium nitride, tantalum, tantalum nitride or copper.
Preferably, in step S04, the material of the contact electrode is the gold of high work function, tungsten, copper, tin indium oxide, fluorination
Tin oxide, the aluminium of titanium nitride or low work function, magnesium, tantalum nitride and include all or part to adjust specific work function
The compound of above-mentioned element.
Preferably, in step S05, the structure type of the perovskite optoelectronic film is AMX3；Wherein, A groups include first
The mixed group of base ammonium, ethyl ammonium, carbonamidine and its preset ratio, M groups include the mixed base of lead, tin, germanium and its preset ratio
Group, X group includes the mixed group of chlorine, bromine, iodine and its preset ratio.
Preferably, in step S06, the material of the passivation layer be silica, aluminium oxide, silicon nitride, phosphorosilicate glass or
Polyimides.
The present invention also provides a kind of image sensor, the image sensor includes：
Semiconductor substrate has flying capacitor and transistor in the semiconductor substrate；
Interlayer dielectric layer, the interlayer dielectric layer are set to the upper surface of the semiconductor substrate, and the interlayer dielectric layer
It is interior that there is multilayer interconnection line and the first through hole filled with metal；
Electrode is contacted, is distributed on the interlayer dielectric layer in array in vertical direction, and adjacent contact electrode
Between with predetermined width interval；
Perovskite optoelectronic film is covered on the contact electrode, to form the photosensitive area of imaging sensor；
Dielectric thin film layer is deposited on the both sides of the perovskite optoelectronic film, has second to lead in the dielectric thin film layer
Hole；
Top electrode, the top electrode are translucent material and by the second through-hole filled with metal and the semiconductor substrate
The metal of upper top layer connects；
Passivation layer is covered on the top electrode, to completely cut off air and water；
Three primary colours filter coating is set to the upper surface of the passivation layer.
The present invention also provides a kind of methods of the above-mentioned image sensor of manufacture, include the following steps：
Step S01 is provided semi-conductive substrate, and is formed on the semiconductor substrate using the preceding road manufacture crafts of CMOS
Flying capacitor and transistor；
Step S02, interlayer dielectric layer on the semiconductor substrate, and make multilayer interconnection line and first through hole；
Step S03 fills metal in the first through hole, and removes the outer excess metal of first through hole；
Step S04, Deposit contact electrode, and it is electrode patterning to the contact, so that the perpendicular battle array of the contact electrode
Column is distributed；Then deposition medium film layer, and form the second through-hole；
Step S05 deposits perovskite optoelectronic film on the contact electrode, and removes the calcium on the dielectric thin film layer
Titanium ore optoelectronic film；Then metal is filled in second through-hole, and removes the outer excess metal of the second through-hole；
Step S06 deposits top electrode and passivation layer, and forms three primary colours filter coating on the passivation layer.
Preferably, in step S02, the material of the interlayer dielectric layer is silica, fluorine-doped silica, carbon dope oxidation
Silicon, aluminium oxide, hafnium oxide, zirconium oxide or lanthana；In step S03, the material of the metal be tungsten, aluminium, titanium, titanium nitride, tantalum,
Tantalum nitride or copper.
Preferably, in step S04, the material of the contact electrode is the gold of high work function, tungsten, copper, tin indium oxide, fluorination
Tin oxide, the aluminium of titanium nitride or low work function, magnesium, tantalum nitride and include all or part to adjust specific work function
The compound of above-mentioned element.
Preferably, in step S05, the structure type of the perovskite optoelectronic film is AMX3；Wherein, A groups include first
The mixed group of base ammonium, ethyl ammonium, carbonamidine and its preset ratio, M groups include the mixed base of lead, tin, germanium and its preset ratio
Group, X group includes the mixed group of chlorine, bromine, iodine and its preset ratio.
The present invention provides a kind of image sensor and its manufacturing methods, are used as by introducing perovskite optoelectronic film photosensitive
Layer, and optimize the material and structure of contact electrode, to form novel photo-sensing device, passed to substitute conventional cmos image
Silicon photoelectric diode in sensor；It, can be in CMOS readings and signal processing since the film-forming temperature of perovskite optoelectronic film is low
Circuit production is grown in the surface of chip after completing, light can shine directly into photo-sensing device without road after by silicon processing procedure
The influence of metal wire is interconnected, therefore the image sensor based on perovskite optoelectronic film can be with 100% fill factor；Together
When, since the maximum photodiode battle array of area occupied in conventional CMOS image sensor is substituted in perovskite photo-sensing device
Row, therefore substantially reduce entire chip size；In addition, chip need not take into account silicon photoelectric diode pole again in the production process
The technological requirement of low noise can reduce technological requirement and significantly reduce cost.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the structural schematic diagram of image sensor in embodiment one proposed by the present invention；
Fig. 2 is the structural schematic diagram of the contact electrode of image sensor in embodiment one proposed by the present invention；
Fig. 3 is the flow diagram of the manufacturing method of image sensor in embodiment one proposed by the present invention；
Fig. 4 is the structural schematic diagram of image sensor in embodiment two proposed by the present invention；
Fig. 5 is the structural schematic diagram for the contact electrode that the present invention proposes image sensor in embodiment two；
Fig. 6 is the flow diagram of the manufacturing method of image sensor in embodiment two proposed by the present invention；
Fig. 7 a- Fig. 7 c are the structural schematic diagram of the 3T reading circuits of image sensor proposed by the present invention；
Fig. 8 is the structural schematic diagram of the 4T reading circuits of image sensor proposed by the present invention；
Fig. 9 is the structural schematic diagram of the 5T reading circuits of image sensor proposed by the present invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, the implementation below in conjunction with attached drawing to the present invention
Mode is described in further detail.Those skilled in the art can understand the present invention easily by the content disclosed by this specification
Other advantages and effect.The present invention can also be embodied or applied by other different embodiments, this explanation
Every details in book can also be based on different viewpoints and application, without departing from the spirit of the present invention carry out various modifications or
Change.
Above and other technical characteristic and advantageous effect, will in conjunction with the embodiments and attached drawing is to graphical sensory proposed by the present invention
Device and its manufacturing method are described in detail.
Embodiment one
As shown in Figure 1, the present invention provides a kind of image sensors comprising semiconductor substrate 101, interlayer dielectric layer
104, interconnection line 103, through-hole 105, contact electrode 201, perovskite optoelectronic film 203, passivation layer 204 and three primary colours filter coating
301, wherein there is flying capacitor and transistor 102, interlayer dielectric layer 104 to be set to semiconductor substrate in semiconductor substrate 101
101 upper surface, and there is multilayer interconnection line 103 and the through-hole 105 filled with metal in interlayer dielectric layer 104, please refer to figure
2, contact electrode 201 is distributed in array on interlayer dielectric layer 104 in the horizontal direction, and is had between adjacent contact electrode
There is the interval of predetermined width, perovskite optoelectronic film 203 is covered on contact electrode 201, to form the photosensitive of imaging sensor
Area, passivation layer 204 are covered on perovskite optoelectronic film 203 to completely cut off air and water, and three primary colours filter coating 301 is set to passivation
The upper surface of layer 204.
Semiconductor substrate 101 in the present embodiment is integrated with reading circuit unit, analog signal amplifying unit, analog-to-digital conversion
Unit, digital processing element and control unit.
Image sensor disclosed in this invention can be made by many methods, and as described below, which is that this law is bright, is proposed
Manufacture one embodiment as shown in Figure 3 technological process.As shown in figure 3, the embodiment of the present invention provides a kind of manufacture figure biography
The method of sensor, includes the following steps：
Step S01 provides semi-conductive substrate 101, and uses the preceding road manufacture crafts of CMOS shape in semiconductor substrate 101
At flying capacitor and transistor 102.
Specifically, in this step, semiconductor substrate 101 is made of standard CMOS process, be integrated with reading circuit unit,
Analog signal amplifying unit, AD conversion unit, digital processing element and control unit.
Step S02, the interlayer dielectric layer 104 in semiconductor substrate 101, and make multilayer interconnection line 103 and through-hole
105。
Specifically, in this step, the material of interlayer dielectric layer 104 includes but not limited to silica, fluorine-doped silica, mixes
Silicon oxide carbide, aluminium oxide, hafnium oxide, zirconium oxide or lanthana.
Step S03 fills metal in through-hole 105, and removes 105 outer excess metal of through-hole.
Specifically, in this step, the material of metal includes but not limited to tungsten, aluminium, titanium, titanium nitride, tantalum, tantalum nitride or copper；
It is preferred that removing 105 outer excess metal of through-hole using CMP process.
Step S04, Deposit contact electrode 201, and dock touched electrode 201 graphically, so that contact electrode 201 is in horizontal array
Column is distributed.
Specifically, in this step, contact electrode 201 contacts with via metal and is graphically formed array, contacts electrode 201
Material include but not limited to high work function gold, tungsten, copper, tin indium oxide, fluorinated tin, titanium nitride or low work function
Aluminium, magnesium, tantalum nitride and in order to adjust specific work function include all or part of above-mentioned element compound.
Contact electrode 201 in this step is plane, the contact electrode 201 of plane be two electrodes in the horizontal direction
It is isolated from each other, two contact electrodes can be material similar in identical material or work function, can also be that work function is mutually far short of what is expected
Material.
Step S05, the deposition perovskite optoelectronic film 203 on contact electrode 201, and removed using lithography and etching technique
The perovskite optoelectronic film in non-photo-sensing region.
Specifically, in this step, the structure type of perovskite optoelectronic film 203 is preferably AMX3；Wherein, A groups include
But be not limited to the mixed group of methyl ammonium, ethyl ammonium, carbonamidine and its preset ratio, M groups include but not limited to lead, tin, germanium and
The mixed group of its preset ratio, X group include but not limited to the mixed group of chlorine, bromine, iodine and its preset ratio.
Step S06, the deposit passivation layer 204 on perovskite optoelectronic film 203, and form three primary colours on passivation layer 204
Filter coating 301.
Specifically, in this step, the material of passivation layer 204 includes but not limited to silica, aluminium oxide, silicon nitride, phosphorus
Silica glass or polyimides.
Embodiment two
As shown in figure 4, the present invention provides a kind of image sensors comprising semiconductor substrate 101, interlayer dielectric layer
104, multilayer interconnection line 103, first through hole 105, contact electrode 201, perovskite optoelectronic film 203, dielectric thin film layer 205, top
Electrode 202, passivation layer 204 and three primary colours filter coating 301；Wherein, there is flying capacitor and transistor in semiconductor substrate 101
102, interlayer dielectric layer 104 is set to the upper surface of semiconductor substrate 101, and has multilayer interconnection line 103 in interlayer dielectric layer 104
With the first through hole 105 filled with metal, referring to Fig. 5, contact electrode 201 be distributed in interlayer in array in vertical direction
On dielectric layer, and the interval with predetermined width between adjacent contact electrode 201；Perovskite optoelectronic film 203, which is covered in, to be connect
In touched electrode 201, to form the photosensitive area of imaging sensor, dielectric thin film layer 205 is deposited on the two of perovskite optoelectronic film 203
Side, has the second through-hole 206 in dielectric thin film layer 205, and top electrode 202 is translucent material and logical by second filled with metal
Hole 206 is connect with the metal of top layer in semiconductor substrate, and passivation layer 204 is covered on top electrode 202, with completely cut off air and
Water, three primary colours filter coating 301 are set to the upper surface of passivation layer 204.
Semiconductor substrate 101 in the present embodiment is integrated with reading circuit unit, analog signal amplifying unit, analog-to-digital conversion
Unit, digital processing element and control unit.
Image sensor disclosed in this invention can be made by many methods, and as described below, which is that this law is bright, is proposed
Manufacture one embodiment as shown in Figure 6 technological process.As shown in fig. 6, the embodiment of the present invention provides a kind of manufacture figure biography
The method of sensor, includes the following steps：
Step S01 provides semi-conductive substrate 101, and uses the preceding road manufacture crafts of CMOS shape in semiconductor substrate 101
At flying capacitor and transistor 102.
Specifically, in this step, semiconductor substrate 101 is made of standard CMOS process, be integrated with reading circuit unit,
Analog signal amplifying unit, AD conversion unit, digital processing element and control unit.
Step S02, the interlayer dielectric layer 104 in semiconductor substrate 101, and make multilayer interconnection line 103 and first
Through-hole 105.
Specifically, in this step, the material of interlayer dielectric layer 104 includes but not limited to silica, fluorine-doped silica, mixes
Silicon oxide carbide, aluminium oxide, hafnium oxide, zirconium oxide or lanthana.
Step S03 fills metal in first through hole 105, and removes 105 outer excess metal of first through hole.
Specifically, in this step, the material of metal includes but not limited to tungsten, aluminium, titanium, titanium nitride, tantalum, tantalum nitride or copper；
It is preferred that removing 105 outer excess metal of first through hole using CMP process.
Step S04, Deposit contact electrode 201, and dock touched electrode 201 graphically, so that contact 201 perpendicular battle array of electrode
Column is distributed；Then deposition medium film layer 205, and form the second through-hole 206.
Specifically, in this step, contact electrode 201 contacts with via metal and is graphically formed array, contacts electrode 201
Material include but not limited to high work function gold, tungsten, copper, tin indium oxide, fluorinated tin, titanium nitride or low work function
Aluminium, magnesium, tantalum nitride and in order to adjust specific work function include all or part of above-mentioned element compound.
Contact electrode 201 in this step is vertical-type, and the contact electrode 201 of vertical-type is two electrodes in vertical direction
It is isolated from each other and top electrode 202 need to be translucent material, two contact electrodes 201 can be material similar in identical material or work function
Material, can also be work function material mutually far short of what is expected.
Step S05, the deposition perovskite optoelectronic film 203 on contact electrode 201, and remove on dielectric thin film layer 205
Perovskite optoelectronic film 203；Then metal is filled in the second through-hole 206, and removes 206 outer excess metal of the second through-hole.
Specifically, in this step, the structure type of perovskite optoelectronic film 203 is preferably AMX3；Wherein, A groups include
But be not limited to the mixed group of methyl ammonium, ethyl ammonium, carbonamidine and its preset ratio, M groups include but not limited to lead, tin, germanium and
The mixed group of its preset ratio, X group include but not limited to the mixed group of chlorine, bromine, iodine and its preset ratio.
Step S06 deposits top electrode 202 and passivation layer 204, and forms three primary colours filter coating on passivation layer 204
301。
Specifically, in this step, the material of passivation layer 204 includes but not limited to silica, aluminium oxide, silicon nitride, phosphorus
Silica glass or polyimides.
As shown in Figure 7a, the imaging sensor based on perovskite optoelectronic film is made of 3 transistors, and respectively resetting is brilliant
Body pipe T1, source follower T2 and selection transistor T3.When work, T1 is first turned on, and sensor is biased on reset voltage；Later
T1 is closed, and the charging charge on sensor will be reduced with different intensities of illumination with different current strength；By source follower T2,
Voltage change on sensor is converted into output voltage variation；Later, T3 is opened, and output voltage signal is transferred to bus
On, complete exposing operation.Charging charge by the limitations such as graphics area and membrane structure, single-sensor accumulation may not be able to be abundant
The variation for reflecting light intensity, as shown in Fig. 7 b and 7c, the electricity in parallel or series of the imaging sensor based on perovskite optoelectronic film
Hold to increase the quantity of detectable stored charge, which can make formation flying capacitor on a silicon substrate or be produced on rear road
MIM capacitor is formed in interconnection line.
The 3T reading circuits as shown in Fig. 7a-7c cannot complete global exposing operation, need to increase by a transmission on this basis
Door T4 can reset the voltage of each sensor simultaneously as shown in figure 8, in exposure；After a while, it opens simultaneously
Charge is transferred on flying capacitor by transmission gate T4 simultaneously；Sequentially read the data of each sensor again later.In addition, may be used also
To increase direct reset transistor T5 directly to reset sensor, as shown in figure 9, reset voltage at this time can in a certain range into
Row selection.
In conclusion the present invention provides a kind of image sensor and its manufacturing method, it is thin by introducing perovskite photoelectricity
Film optimizes the material and structure of contact electrode as photosensitive layer, to form novel photo-sensing device, to substitute routine
Silicon photoelectric diode in cmos image sensor；Since the film-forming temperature of perovskite optoelectronic film is low, can be read in CMOS
Be grown in the surface of chip after completing with signal processing circuit, light can shine directly into photo-sensing device without by
The influence of road interconnection metal wire after silicon processing procedure, therefore image sensor based on perovskite optoelectronic film can be filled out with 100%
Fill coefficient；Simultaneously as the maximum photoelectricity of area occupied in conventional CMOS image sensor is substituted in perovskite photo-sensing device
Diode array, therefore substantially reduce entire chip size；In addition, chip need not take into account silicon photoelectricity again in the production process
The technological requirement of the extremely low noise of diode can reduce technological requirement and significantly reduce cost.
Several preferred embodiments of the present invention have shown and described in above description, but as previously described, it should be understood that the present invention
Be not limited to form disclosed herein, be not to be taken as excluding other embodiments, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in the scope of the invention is set forth herein
It is modified.And changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention, then it all should be in this hair
In the protection domain of bright appended claims.
Claims (10)
1. a kind of image sensor, which is characterized in that the image sensor includes：
Semiconductor substrate has flying capacitor and transistor in the semiconductor substrate；
Interlayer dielectric layer, the interlayer dielectric layer are set to the upper surface of the semiconductor substrate, and tool in the interlayer dielectric layer
There are multilayer interconnection line and the through-hole filled with metal；
Electrode is contacted, is distributed on the interlayer dielectric layer in array in the horizontal direction, and between adjacent contact electrode
Interval with predetermined width；
Perovskite optoelectronic film is covered on the contact electrode, to form the photosensitive area of imaging sensor；
Passivation layer is covered on the perovskite optoelectronic film, to completely cut off air and water；
Three primary colours filter coating is set to the upper surface of the passivation layer.
2. a kind of method of manufacture image sensor as described in claim 1, which is characterized in that include the following steps：
Step S01 provides semi-conductive substrate, and forms suspension on the semiconductor substrate using the preceding road manufacture crafts of CMOS
Capacitance and transistor；
Step S02, interlayer dielectric layer on the semiconductor substrate, and make multilayer interconnection line and through-hole；
Step S03 fills metal in the through-hole, and removes the outer excess metal of through-hole；
Step S04, Deposit contact electrode, and it is electrode patterning to the contact, so that the contact electrode is in horizontal array column
Distribution；
Step S05 deposits perovskite optoelectronic film on the contact electrode, and removes non-photo-sensing using lithography and etching technique
The perovskite optoelectronic film in region；
Step S06, the deposit passivation layer on the perovskite optoelectronic film, and form three primary colours on the passivation layer and filter
Film.
3. the manufacturing method of image sensor according to claim 2, which is characterized in that in step S02, the interlayer is situated between
The material of matter layer is silica, fluorine-doped silica, carbon doped silicon oxide, aluminium oxide, hafnium oxide, zirconium oxide or lanthana；Step
In S03, the material of the metal is tungsten, aluminium, titanium, titanium nitride, tantalum, tantalum nitride or copper.
4. the manufacturing method of image sensor according to claim 2, which is characterized in that in step S04, the contact electricity
The material of pole is aluminium, magnesium, the nitrogen of the gold of high work function, tungsten, copper, tin indium oxide, fluorinated tin, titanium nitride or low work function
Change tantalum and includes the compound of all or part of above-mentioned high work function and low workfunction elemental in order to adjust specific work function.
5. the manufacturing method of image sensor according to claim 2, which is characterized in that in step S05, the perovskite
The structure type of optoelectronic film is AMX3；Wherein, A groups include the mixed base of methyl ammonium, ethyl ammonium, carbonamidine and its preset ratio
Group, M groups include the mixed group of lead, tin, germanium and its preset ratio, and X group includes the mixed of chlorine, bromine, iodine and its preset ratio
Close group.
6. a kind of image sensor, which is characterized in that the image sensor includes：
Semiconductor substrate has flying capacitor and transistor in the semiconductor substrate；
Interlayer dielectric layer, the interlayer dielectric layer are set to the upper surface of the semiconductor substrate, and tool in the interlayer dielectric layer
There are multilayer interconnection line and the first through hole filled with metal；
Electrode is contacted, is distributed on the interlayer dielectric layer in array in vertical direction, and between adjacent contact electrode
Interval with predetermined width；
Perovskite optoelectronic film is covered on the contact electrode, to form the photosensitive area of imaging sensor；
Dielectric thin film layer is deposited on the both sides of the perovskite optoelectronic film, has the second through-hole in the dielectric thin film layer；
Top electrode, the top electrode be translucent material and by the second through-hole filled with metal in the semiconductor substrate most
The metal on upper layer connects；
Passivation layer is covered on the top electrode, to completely cut off air and water；
Three primary colours filter coating is set to the upper surface of the passivation layer.
7. a kind of method of manufacture image sensor as claimed in claim 6, which is characterized in that include the following steps：
Step S01 provides semi-conductive substrate, and forms suspension on the semiconductor substrate using the preceding road manufacture crafts of CMOS
Capacitance and transistor；
Step S02, interlayer dielectric layer on the semiconductor substrate, and make multilayer interconnection line and first through hole；
Step S03 fills metal in the first through hole, and removes the outer excess metal of first through hole；
Step S04, Deposit contact electrode, and it is electrode patterning to the contact, so that the perpendicular array of the contact electrode
Distribution；Then deposition medium film layer, and form the second through-hole；
Step S05 deposits perovskite optoelectronic film on the contact electrode, and removes the perovskite on the dielectric thin film layer
Optoelectronic film；Then metal is filled in second through-hole, and removes the outer excess metal of the second through-hole；
Step S06 deposits top electrode and passivation layer, and forms three primary colours filter coating on the passivation layer.
8. the manufacturing method of image sensor according to claim 7, which is characterized in that in step S02, the interlayer is situated between
The material of matter layer is silica, fluorine-doped silica, carbon doped silicon oxide, aluminium oxide, hafnium oxide, zirconium oxide or lanthana；Step
In S03, the material of the metal is tungsten, aluminium, titanium, titanium nitride, tantalum, tantalum nitride or copper.
9. the manufacturing method of image sensor according to claim 7, which is characterized in that in step S04, the contact electricity
The material of pole is aluminium, magnesium, the nitrogen of the gold of high work function, tungsten, copper, tin indium oxide, fluorinated tin, titanium nitride or low work function
Change tantalum and includes the compound of all or part of above-mentioned high work function and low workfunction elemental in order to adjust specific work function.
10. the manufacturing method of image sensor according to claim 7, which is characterized in that in step S05, the calcium titanium
The structure type of mine optoelectronic film is AMX3；Wherein, A groups include the mixing of methyl ammonium, ethyl ammonium, carbonamidine and its preset ratio
Group, M groups include the mixed group of lead, tin, germanium and its preset ratio, and X group includes chlorine, bromine, iodine and its preset ratio
Mixed group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510999415.9A CN105428384B (en) | 2015-12-28 | 2015-12-28 | A kind of image sensor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510999415.9A CN105428384B (en) | 2015-12-28 | 2015-12-28 | A kind of image sensor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105428384A CN105428384A (en) | 2016-03-23 |
| CN105428384B true CN105428384B (en) | 2018-08-10 |
Family
ID=55506463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510999415.9A Active CN105428384B (en) | 2015-12-28 | 2015-12-28 | A kind of image sensor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105428384B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10038019B2 (en) | 2015-12-29 | 2018-07-31 | Industrial Technology Research Institute | Image sensor and manufacturing method thereof |
| CN105914216B (en) * | 2016-05-05 | 2019-01-18 | 上海集成电路研发中心有限公司 | A kind of image sensor structure and preparation method thereof |
| CN106206634A (en) * | 2016-07-27 | 2016-12-07 | 上海集成电路研发中心有限公司 | A kind of image sensor architecture and preparation method thereof |
| WO2018039962A1 (en) | 2016-08-31 | 2018-03-08 | Boe Technology Group Co., Ltd. | Radiation detector and fabricating method thereof |
| TWI649865B (en) | 2017-09-06 | 2019-02-01 | 財團法人工業技術研究院 | Image sensor and manufacturing method thereof |
| CN107634079B (en) * | 2017-09-19 | 2020-05-08 | 中山晟欣信息科技有限公司 | Photoelectric sensor and manufacturing method thereof |
| US10256306B1 (en) * | 2017-11-30 | 2019-04-09 | International Business Machines Corporation | Vertically integrated multispectral imaging sensor with graphene as electrode and diffusion barrier |
| DE112018006813T5 (en) | 2018-01-10 | 2020-09-17 | Sony Corporation | IMAGE SENSOR AND ELECTRONIC DEVICE |
| CN110010635A (en) * | 2019-04-12 | 2019-07-12 | 上海集成电路研发中心有限公司 | Imaging sensor and preparation method thereof |
| CN113097237B (en) * | 2020-01-09 | 2023-08-29 | 张志峰 | Perovskite-based image sensor chip and preparation method thereof |
| CN116504783A (en) * | 2022-01-21 | 2023-07-28 | 长鑫存储技术有限公司 | Semiconductor device and preparation method thereof |
| CN115028196A (en) * | 2022-07-28 | 2022-09-09 | 广州粤芯半导体技术有限公司 | Preparation method of perovskite quantum dot, nanosheet and semiconductor sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6080987A (en) * | 1997-10-28 | 2000-06-27 | Raytheon Company | Infrared-sensitive conductive-polymer coating |
| CN101546777A (en) * | 2009-05-08 | 2009-09-30 | 北京思比科微电子技术有限公司 | Soi cmos image sensor structure and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6392257B1 (en) * | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US20080099681A1 (en) * | 2004-02-17 | 2008-05-01 | Yasuhiro Shimada | Infrared Detector and Process for Fabricating the Same |
-
2015
- 2015-12-28 CN CN201510999415.9A patent/CN105428384B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6080987A (en) * | 1997-10-28 | 2000-06-27 | Raytheon Company | Infrared-sensitive conductive-polymer coating |
| CN101546777A (en) * | 2009-05-08 | 2009-09-30 | 北京思比科微电子技术有限公司 | Soi cmos image sensor structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105428384A (en) | 2016-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105428384B (en) | A kind of image sensor and its manufacturing method | |
| JP7467587B2 (en) | Imaging device and electronic device | |
| CN101964352B (en) | Solid-state imaging device, method of manufacturing the same, and electronic apparatus | |
| JP7466720B2 (en) | Imaging device and electronic device | |
| WO2018215882A1 (en) | Imaging device and electronic apparatus | |
| CN107039476A (en) | Imaging sensor and the method for forming imaging sensor | |
| US6995442B2 (en) | Total internal reflection (TIR) CMOS imager | |
| WO2017098779A1 (en) | Solid-state imaging element, imaging device, and method for producing solid-state imaging element | |
| CN109155324A (en) | Stacking back-illuminated type quantum imaging sensor with cluster parallel read-out | |
| WO2019012369A1 (en) | Imaging device, and electronic apparatus | |
| Fontaine | Recent innovations in CMOS image sensors | |
| KR20220035919A (en) | imaging devices and electronic devices | |
| CN108987420A (en) | Photographic device | |
| CN109585474A (en) | Semiconductor device and equipment | |
| JP2006294765A (en) | Solid state imaging device and its manufacturing method | |
| WO2022023859A1 (en) | Imaging device, electronic equipment, and moving body | |
| US8815630B1 (en) | Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods | |
| CN105914216B (en) | A kind of image sensor structure and preparation method thereof | |
| WO2020222059A1 (en) | Imaging device, method for operating same, and electronic apparatus | |
| WO2021191719A1 (en) | Imaging device and electronic device | |
| KR20220051350A (en) | imaging devices and electronic devices | |
| KR20220020259A (en) | imaging devices and electronic devices | |
| US20230326949A1 (en) | Image sensors including nanorod pixel array, methods of manufacturing image sensors, and electronic devices including image sensors | |
| CN101308815A (en) | Image sensor construction and method for making the same | |
| KR20200072855A (en) | Image Sensing Device Having an Organic Pixel Array and an Inorganic Pixel Array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |