CN105428377A - CMOS image sensor - Google Patents

CMOS image sensor Download PDF

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Publication number
CN105428377A
CN105428377A CN201510765705.7A CN201510765705A CN105428377A CN 105428377 A CN105428377 A CN 105428377A CN 201510765705 A CN201510765705 A CN 201510765705A CN 105428377 A CN105428377 A CN 105428377A
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photodiode
layer
image sensor
substrate layer
cmos image
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王佳
何晓锋
黄建冬
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters

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Abstract

本发明涉及一种CMOS影像传感器,包括衬底层和位于衬底层上方的微透镜层和光过滤层;微透镜层包括若干个阵列分布的聚光透镜;光过滤层包括若干个阵列分布的透射光栅;衬底层包括若干个阵列分布的光电二极管组,光电二极管组包括依次排列的红色光电二极管、绿色光电二极管和蓝色光电二极管;透射光栅的出射面的下方均设置有一列光电二极管组,且其红色光电二极管对应于透射光栅的红光出射区,绿色光电二极管对应于透射光栅的绿光出射区,蓝色光电二极管对应于透射光栅的蓝光出射区。本发明用透射光栅取代彩色滤光片,波长范围宽,不存在光过滤损失,增加进入光电二极管的光强;提高CMOS影像传感器分辨率和色彩还原性,扩大其环境使用范围和应用领域。

The invention relates to a CMOS image sensor, comprising a substrate layer, a microlens layer and a light filter layer located above the substrate layer; the microlens layer includes several condenser lenses distributed in an array; the light filter layer includes a plurality of transmission gratings distributed in an array; The substrate layer includes several photodiode groups distributed in an array. The photodiode groups include red photodiodes, green photodiodes and blue photodiodes arranged in sequence; The photodiode corresponds to the red light emitting area of the transmission grating, the green photodiode corresponds to the green light emitting area of the transmission grating, and the blue photodiode corresponds to the blue light emitting area of the transmission grating. The invention replaces the color filter with a transmission grating, has a wide wavelength range, no light filtering loss, increases the light intensity entering the photodiode, improves the resolution and color reproduction of the CMOS image sensor, and expands its environmental use range and application field.

Description

一种CMOS影像传感器A CMOS image sensor

技术领域technical field

本发明涉及半导体技术领域,特别涉及一种CMOS影像传感器。The invention relates to the technical field of semiconductors, in particular to a CMOS image sensor.

背景技术Background technique

现有的CMOS影像传感器是通过感光元件上的彩色滤光片来获取及区分色彩。彩色滤光片主要有拜耳阵列和条纹阵列两种形式。但,由于彩色滤光片波长范围窄,易导致CMOS影像传感器分辨率差;且由于彩色滤光片具有一定的厚度,及仅允许部分波长光线通过,降低了进入探测器的光强,易导致CMOS影像传感器色彩还原性差。Existing CMOS image sensors acquire and distinguish colors through color filters on the photosensitive element. There are two main types of color filters: Bayer array and stripe array. However, due to the narrow wavelength range of the color filter, it is easy to cause poor resolution of the CMOS image sensor; and because the color filter has a certain thickness and only allows part of the wavelength of light to pass through, the light intensity entering the detector is reduced, which is easy to cause CMOS image sensors have poor color reproduction.

发明内容Contents of the invention

本发明目的是提供一种CMOS影像传感器,解决现有技术中存在的上述问题。The object of the present invention is to provide a CMOS image sensor to solve the above-mentioned problems in the prior art.

本发明解决上述技术问题的技术方案如下:The technical scheme that the present invention solves the problems of the technologies described above is as follows:

一种CMOS影像传感器,包括衬底层和位于所述衬底层上方的微透镜层和光过滤层;A CMOS image sensor, comprising a substrate layer and a microlens layer and a light filter layer positioned above the substrate layer;

所述微透镜层包括若干个阵列分布的聚光透镜;The microlens layer includes several condenser lenses distributed in an array;

所述光过滤层包括若干个阵列分布的透射光栅;The light filtering layer includes several transmission gratings distributed in an array;

所述衬底层包括若干个阵列分布的光电二极管组,所述光电二极管组包括依次排列的红色光电二极管、绿色光电二极管和蓝色光电二极管;每个所述透射光栅的出射面的下方均设置有一列所述光电二极管组,且所述光电二极管组的红色光电二极管对应于所述透射光栅的红光出射区,所述光电二极管组的绿色光电二极管对应于所述透射光栅的绿光出射区,所述光电二极管组的蓝色光电二极管对应于所述透射光栅的蓝光出射区。The substrate layer includes several photodiode groups arranged in an array, and the photodiode groups include red photodiodes, green photodiodes and blue photodiodes arranged in sequence; The photodiode group is arranged, and the red photodiode of the photodiode group corresponds to the red light emission area of the transmission grating, and the green photodiode of the photodiode group corresponds to the green light emission area of the transmission grating, The blue photodiodes of the photodiode group correspond to the blue light emitting regions of the transmission grating.

本发明的有益效果是:利用透射光栅色散原理,使用三基色红、绿、蓝三色光电二极管分别接收来自透射光栅分解的红、绿、蓝三色光;用透射光栅取代现有的彩色滤光片,波长范围宽,且不存在光过滤损失,增加进入光电二极管的光强;提高CMOS影像传感器分辨率和色彩还原性,扩大其环境使用范围和应用领域。The beneficial effects of the present invention are: using the dispersion principle of the transmission grating, using the three primary colors of red, green and blue photodiodes to respectively receive the red, green and blue light from the decomposition of the transmission grating; replacing the existing color filter with the transmission grating The chip has a wide wavelength range, and there is no light filtering loss, which increases the light intensity entering the photodiode; improves the resolution and color reproduction of the CMOS image sensor, and expands its environmental use range and application field.

在上述技术方案的基础上,本发明还可以做如下改进。On the basis of the above technical solutions, the present invention can also be improved as follows.

进一步,所述光电二极管的口径均小于2um。Further, the apertures of the photodiodes are all less than 2um.

采用上述进一步方案的有益效果是,提高CMOS影像传感器分辨率,且有效减小CMOS影像传感器的尺寸。The beneficial effect of adopting the above further solution is to improve the resolution of the CMOS image sensor and effectively reduce the size of the CMOS image sensor.

进一步,所述微透镜层位于所述光过滤层和衬底层之间,且每个光电二极管上方均设置有一个所述聚光透镜,所述聚光透镜的口径为2um。Further, the microlens layer is located between the light filter layer and the substrate layer, and one condenser lens is arranged above each photodiode, and the diameter of the condenser lens is 2um.

采用上述进一步方案的有益效果是,聚光透镜将透射光栅分解的红、绿、蓝三色光高效耦合入对应的红、绿、蓝三色光电二极管,增加进入光电二极管的光强。The beneficial effect of adopting the above further solution is that the condensing lens efficiently couples the red, green, and blue light decomposed by the transmission grating into the corresponding red, green, and blue photodiodes, increasing the light intensity entering the photodiodes.

进一步,所述微透镜层还包括透光薄膜材料,所述透光薄膜材料涂覆与所述聚光透镜的上表面,获取平整的微透镜层上表面。Further, the microlens layer further includes a light-transmitting film material, and the light-transmitting film material is coated on the upper surface of the condenser lens to obtain a flat upper surface of the microlens layer.

采用上述进一步方案的有益效果是,便于在微透镜层上制备透射光栅。The beneficial effect of adopting the above further solution is that it is convenient to prepare a transmission grating on the microlens layer.

进一步,所述衬底层还包括金属栅格,所述金属栅格设置于相邻两个光电二极管之间,且所述金属栅格的上下两个表面分别与所述衬底层的上下两个表面处于同一水平面。Further, the substrate layer also includes a metal grid, the metal grid is arranged between two adjacent photodiodes, and the upper and lower surfaces of the metal grid are respectively connected to the upper and lower surfaces of the substrate layer. at the same level.

采用上述进一步方案的有益效果是,提高CMOS影像传感器的灵敏度和抗干扰性。The beneficial effect of adopting the above further solution is to improve the sensitivity and anti-interference performance of the CMOS image sensor.

进一步,所述光过滤层位于所述微透镜层和衬底层之间,且每个透射光栅的入射面的上方均设置有一列所述聚光透镜,所述聚光透镜的口径为6um。Further, the light filter layer is located between the microlens layer and the substrate layer, and a row of the condensing lenses is arranged above the incident surface of each transmission grating, and the diameter of the condensing lenses is 6um.

采用上述进一步方案的有益效果是,聚光透镜将白光高效耦合入透射光栅,增加进入光电二极管的光强。The beneficial effect of adopting the above further solution is that the condensing lens efficiently couples white light into the transmission grating, increasing the light intensity entering the photodiode.

进一步,所述衬底层还包括金属栅格,所述金属栅格设置于相邻两个光电二极管组之间,且所述金属栅格的上下两个表面分别与所述衬底层的上下两个表面处于同一水平面。Further, the substrate layer also includes a metal grid, the metal grid is arranged between two adjacent photodiode groups, and the upper and lower surfaces of the metal grid are respectively connected to the upper and lower surfaces of the substrate layer. surfaces are at the same level.

采用上述进一步方案的有益效果是,提高CMOS影像传感器的灵敏度和抗干扰性。The beneficial effect of adopting the above further solution is to improve the sensitivity and anti-interference performance of the CMOS image sensor.

附图说明Description of drawings

图1为本发明一种CMOS影像传感器的第一实施例示意图;1 is a schematic diagram of a first embodiment of a CMOS image sensor of the present invention;

图2为本发明一种CMOS影像传感器的第二实施例示意图。FIG. 2 is a schematic diagram of a second embodiment of a CMOS image sensor of the present invention.

附图中,各标号所代表的部件列表如下:In the accompanying drawings, the list of parts represented by each label is as follows:

1、衬底层,11、光电二极管组,111、红色光电二极管,112、绿色光电二极管,113、蓝色光电二极管,12、金属栅格,2、微透镜层,21、聚光透镜,3、光过滤层,31、透射光栅。1, substrate layer, 11, photodiode group, 111, red photodiode, 112, green photodiode, 113, blue photodiode, 12, metal grid, 2, microlens layer, 21, condenser lens, 3, Light filtering layer, 31. Transmission grating.

具体实施方式detailed description

以下结合附图对本发明的原理和特征进行描述,所举实例只用于解释本发明,并非用于限定本发明的范围。The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

如图1和图2所示,一种CMOS影像传感器,包括衬底层1和位于所述衬底层1上方的微透镜层2和光过滤层3;As shown in Figures 1 and 2, a CMOS image sensor includes a substrate layer 1 and a microlens layer 2 and an optical filter layer 3 positioned above the substrate layer 1;

所述微透镜层2包括若干个阵列分布的聚光透镜21;The microlens layer 2 includes several condenser lenses 21 distributed in an array;

所述光过滤层3包括若干个阵列分布的透射光栅31;The light filtering layer 3 includes several transmission gratings 31 distributed in an array;

所述衬底层1包括若干个阵列分布的光电二极管组11,所述光电二极管组11包括依次排列的红色光电二极管111、绿色光电二极管112和蓝色光电二极管113;每个所述透射光栅31的出射面的下方均设置有一列所述光电二极管组11,且所述光电二极管组11的红色光电二极管111对应于所述透射光栅31的红光出射区,所述光电二极管组11的绿色光电二极管112对应于所述透射光栅31的绿光出射区,所述光电二极管组11的蓝色光电二极管113对应于所述透射光栅31的蓝光出射区。The substrate layer 1 includes several photodiode groups 11 distributed in an array, and the photodiode group 11 includes red photodiodes 111, green photodiodes 112 and blue photodiodes 113 arranged in sequence; each of the transmission gratings 31 A row of the photodiode groups 11 is arranged below the exit surface, and the red photodiodes 111 of the photodiode groups 11 correspond to the red light emission area of the transmission grating 31, and the green photodiodes of the photodiode groups 11 112 corresponds to the green light emission area of the transmission grating 31 , and the blue photodiode 113 of the photodiode group 11 corresponds to the blue light emission area of the transmission grating 31 .

优选,所述光电二极管111、112、113的口径均小于2um。Preferably, the apertures of the photodiodes 111, 112, 113 are all less than 2um.

第一实施例如图1所示,优选,所述微透镜层2位于所述光过滤层3和衬底层1之间,且每个光电二极管111、112、113上方均设置有一个所述聚光透镜21,所述聚光透镜21的口径为2um。The first embodiment is shown in FIG. 1. Preferably, the microlens layer 2 is located between the light filter layer 3 and the substrate layer 1, and one of the light concentrators is arranged above each photodiode 111, 112, 113. The lens 21, the diameter of the condenser lens 21 is 2um.

优选,所述微透镜层2还包括透光薄膜材料22,所述透光薄膜材料22涂覆与所述聚光透镜21的上表面,获取平整的微透镜层2上表面。Preferably, the microlens layer 2 further includes a light-transmitting film material 22 , and the light-transmitting film material 22 is coated with the upper surface of the condenser lens 21 to obtain a flat upper surface of the microlens layer 2 .

优选,所述衬底层1还包括金属栅格12,所述金属栅格12设置于相邻两个光电二极管111、112、113之间,且所述金属栅格12的上下两个表面分别与所述衬底层1的上下两个表面处于同一水平面。Preferably, the substrate layer 1 further includes a metal grid 12, the metal grid 12 is arranged between two adjacent photodiodes 111, 112, 113, and the upper and lower surfaces of the metal grid 12 are respectively connected to The upper and lower surfaces of the substrate layer 1 are at the same level.

第二实施例如图2所示,优选,所述光过滤层3位于所述微透镜层2和衬底层1之间,且每个透射光栅31的入射面的上方均设置有一列所述聚光透镜21,所述聚光透镜21的口径为6um。The second embodiment is shown in FIG. 2 . Preferably, the light filter layer 3 is located between the microlens layer 2 and the substrate layer 1, and a column of the light-concentrating light is arranged above the incident surface of each transmission grating 31. The lens 21, the diameter of the condenser lens 21 is 6um.

优选,所述衬底层1还包括金属栅格12,所述金属栅格12设置于相邻两个光电二极管组11之间,且所述金属栅格12的上下两个表面分别与所述衬底层1的上下两个表面处于同一水平面。Preferably, the substrate layer 1 further includes a metal grid 12, the metal grid 12 is arranged between two adjacent photodiode groups 11, and the upper and lower surfaces of the metal grid 12 are respectively connected to the substrate The upper and lower surfaces of the bottom layer 1 are on the same horizontal plane.

以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within range.

Claims (7)

1.一种CMOS影像传感器,其特征在于,包括衬底层(1)和位于所述衬底层(1)上方的微透镜层(2)和光过滤层(3);1. A CMOS image sensor, characterized in that, comprises a substrate layer (1) and a microlens layer (2) and a light filter layer (3) positioned above the substrate layer (1); 所述微透镜层(2)包括若干个阵列分布的聚光透镜(21);The microlens layer (2) includes several condenser lenses (21) distributed in an array; 所述光过滤层(3)包括若干个阵列分布的透射光栅(31);The light filtering layer (3) includes several transmission gratings (31) distributed in an array; 所述衬底层(1)包括若干个阵列分布的光电二极管组(11),所述光电二极管组(11)包括依次排列的红色光电二极管(111)、绿色光电二极管(112)和蓝色光电二极管(113);每个所述透射光栅(31)的出射面的下方均设置有一列所述光电二极管组(11),且所述光电二极管组(11)的红色光电二极管(111)对应于所述透射光栅(31)的红光出射区,所述光电二极管组(11)的绿色光电二极管(112)对应于所述透射光栅(31)的绿光出射区,所述光电二极管组(11)的蓝色光电二极管(113)对应于所述透射光栅(31)的蓝光出射区。The substrate layer (1) includes several photodiode groups (11) distributed in an array, and the photodiode group (11) includes red photodiodes (111), green photodiodes (112) and blue photodiodes arranged in sequence (113); a column of photodiode groups (11) is arranged below the exit surface of each transmission grating (31), and the red photodiodes (111) of the photodiode groups (11) correspond to the The red light emission area of the transmission grating (31), the green photodiode (112) of the photodiode group (11) corresponds to the green light emission area of the transmission grating (31), and the photodiode group (11) The blue photodiode (113) corresponds to the blue light emission area of the transmission grating (31). 2.根据权利要求1所述一种CMOS影像传感器,其特征在于,所述光电二极管(111、112、113)的口径均小于2um。2. A CMOS image sensor according to claim 1, characterized in that the apertures of the photodiodes (111, 112, 113) are all smaller than 2um. 3.根据权利要求2所述一种CMOS影像传感器,其特征在于,所述微透镜层(2)位于所述光过滤层(3)和衬底层(1)之间,且每个光电二极管(111、112、113)上方均设置有一个所述聚光透镜(21),所述聚光透镜(21)的口径为2um。3. a kind of CMOS image sensor according to claim 2, is characterized in that, described microlens layer (2) is positioned between described light filtering layer (3) and substrate layer (1), and each photodiode ( 111, 112, 113) above are all provided with a said condenser lens (21), the aperture of said condenser lens (21) is 2um. 4.根据权利要求3所述一种CMOS影像传感器,其特征在于,所述微透镜层(2)还包括透光薄膜材料(22),所述透光薄膜材料(22)涂覆与所述聚光透镜(21)的上表面,获取平整的微透镜层(2)上表面。4. A kind of CMOS image sensor according to claim 3, is characterized in that, described microlens layer (2) also comprises light-transmitting film material (22), and described light-transmitting film material (22) is coated with described The upper surface of the condensing lens (21) obtains a smooth upper surface of the microlens layer (2). 5.根据权利要求3所述一种CMOS影像传感器,其特征在于,所述衬底层(1)还包括金属栅格(12),所述金属栅格(12)设置于相邻两个光电二极管(111、112、113)之间,且所述金属栅格(12)的上下两个表面分别与所述衬底层(1)的上下两个表面处于同一水平面。5. A CMOS image sensor according to claim 3, characterized in that, the substrate layer (1) further comprises a metal grid (12), and the metal grid (12) is arranged between two adjacent photodiodes (111, 112, 113), and the upper and lower surfaces of the metal grid (12) are respectively at the same level as the upper and lower surfaces of the substrate layer (1). 6.根据权利要求2所述一种CMOS影像传感器,其特征在于,所述光过滤层(3)位于所述微透镜层(2)和衬底层(1)之间,且每个透射光栅(31)的入射面的上方均设置有一列所述聚光透镜(21),所述聚光透镜(21)的口径为6um。6. a kind of CMOS image sensor according to claim 2, is characterized in that, described light filtering layer (3) is positioned between described microlens layer (2) and substrate layer (1), and each transmission grating ( 31) above the incident surface is provided with a row of the condenser lens (21), the diameter of the condenser lens (21) is 6um. 7.根据权利要求6所述一种CMOS影像传感器,其特征在于,所述衬底层(1)还包括金属栅格(12),所述金属栅格(12)设置于相邻两个光电二极管组(11)之间,且所述金属栅格(12)的上下两个表面分别与所述衬底层(1)的上下两个表面处于同一水平面。7. A CMOS image sensor according to claim 6, characterized in that, the substrate layer (1) further comprises a metal grid (12), and the metal grid (12) is arranged between two adjacent photodiodes between the groups (11), and the upper and lower surfaces of the metal grid (12) are respectively at the same level as the upper and lower surfaces of the substrate layer (1).
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