CN105428377A - CMOS image sensor - Google Patents
CMOS image sensor Download PDFInfo
- Publication number
- CN105428377A CN105428377A CN201510765705.7A CN201510765705A CN105428377A CN 105428377 A CN105428377 A CN 105428377A CN 201510765705 A CN201510765705 A CN 201510765705A CN 105428377 A CN105428377 A CN 105428377A
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- photodiode
- substrate layer
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- collector lens
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- 230000005540 biological transmission Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000001914 filtration Methods 0.000 abstract 4
- 238000009833 condensation Methods 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention relates to a CMOS image sensor comprising a substrate layer, a microlens layer on the substrate layer and a light filtering layer. The microlens layer comprises a plurality of condensation lenses in array distribution. The light filtering layer comprises a plurality of transmission gratings in array distribution. The substrate layer comprises a plurality of photodiode groups in array distribution. Each of the photodiode groups comprises a red light photodiode, a green light photodiode, and a blue light photodiode which are arranged in order. A column of photodiode groups is arranged under the emitting surfaces of the transmission gratings, the red light photodiode is corresponding to the red light emission area of the transmission gratings, the green light photodiode is corresponding to the green light emission area of the transmission gratings, and the blue light photodiode is corresponding to the blue light emission area of the transmission gratings. According to the CMOS image sensor, the transmission gratings are used to replace colorful light filtering pieces, the wavelength range is wide, light filtering loss is zero, the light intensity of the light photodiodes is increased, the resolution and color reproduction of the CMOS image sensor are improved, and the environment use range and application field are enlarged.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of CMOS.
Background technology
Existing CMOS is obtained by the colored filter on photo-sensitive cell and distinguishes color.Colored filter mainly contains Bayer array and striped array two kinds of forms.But, because colored filter wave-length coverage is narrow, easily cause CMOS to differentiate rate variance; And there is certain thickness due to colored filter, and only allow part wavelength light to pass through, reduce the light intensity entering detector, easily cause CMOS color reducibility poor.
Summary of the invention
The object of the invention is to provide a kind of CMOS, solves the above-mentioned problems in the prior art.
The technical scheme that the present invention solves the problems of the technologies described above is as follows:
A kind of CMOS, comprises substrate layer and the microlens layer be positioned at above described substrate layer and light filter course;
Described microlens layer comprises the collector lens of several array distribution;
Described smooth filter course comprises the transmission grating of several array distribution;
Described substrate layer comprises the photodiode group of several array distribution, and described photodiode group comprises the red photodiode, green photodiode and the blue colour photodiode that are arranged in order; The below of the exit facet of each described transmission grating is provided with the described photodiode group of row, and the red photodiode of described photodiode group corresponds to the ruddiness outgoing district of described transmission grating, the green photodiode of described photodiode group corresponds to the green glow outgoing district of described transmission grating, and the blue colour photodiode of described photodiode group corresponds to the blue light outgoing district of described transmission grating.
The invention has the beneficial effects as follows: utilize transmission grating chromatic dispersion principle, use three primary colors red, green, blue three coloured light electric diode to receive red, green, blue three coloured light decomposed from transmission grating respectively; Replace existing colored filter with transmission grating, wave-length coverage is wide, and there is not light filter loss, increases the light intensity entering photodiode; Improve CMOS resolution and color reducibility, expand its environment scope of application and application.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the bore of described photodiode is all less than 2um.
The beneficial effect of above-mentioned further scheme is adopted to be improve CMOS resolution, and effectively reduce the size of CMOS.
Further, described microlens layer between described smooth filter course and substrate layer, and is provided with a described collector lens above each photodiode, and the bore of described collector lens is 2um.
Adopt the beneficial effect of above-mentioned further scheme to be that the red, green, blue three coloured light efficient coupling that transmission grating decomposes by collector lens enters corresponding red, green, blue three coloured light electric diode, increase the light intensity entering photodiode.
Further, described microlens layer also comprises light transmission film material, the upper surface of described light transmission film Material coating and described collector lens, obtains smooth microlens layer upper surface.
The beneficial effect of above-mentioned further scheme is adopted to be convenient to prepare transmission grating on microlens layer.
Further, described substrate layer also comprises metal grate, and described metal grate is arranged between adjacent two photodiodes, and two surfaces up and down of described metal grate are in same level with two surfaces up and down of described substrate layer respectively.
The beneficial effect of above-mentioned further scheme is adopted to be improve sensitivity and the anti-interference of CMOS.
Further, described smooth filter course is between described microlens layer and substrate layer, and the top of the plane of incidence of each transmission grating is provided with the described collector lens of row, and the bore of described collector lens is 6um.
Adopt the beneficial effect of above-mentioned further scheme to be that white light efficient coupling is entered transmission grating by collector lens, increase the light intensity entering photodiode.
Further, described substrate layer also comprises metal grate, and described metal grate is arranged between adjacent two photodiode groups, and two surfaces up and down of described metal grate are in same level with two surfaces up and down of described substrate layer respectively.
The beneficial effect of above-mentioned further scheme is adopted to be improve sensitivity and the anti-interference of CMOS.
Accompanying drawing explanation
Fig. 1 is the first embodiment schematic diagram of a kind of CMOS of the present invention;
Fig. 2 is the second embodiment schematic diagram of a kind of CMOS of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1, substrate layer, 11, photodiode group, 111, red photodiode, 112, green photodiode, 113, blue colour photodiode, 12, metal grate, 2, microlens layer, 21, collector lens, 3, light filter course, 31, transmission grating.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As depicted in figs. 1 and 2, a kind of CMOS, comprises substrate layer 1 and the microlens layer 2 be positioned at above described substrate layer 1 and light filter course 3;
Described microlens layer 2 comprises the collector lens 21 of several array distribution;
Described smooth filter course 3 comprises the transmission grating 31 of several array distribution;
Described substrate layer 1 comprises the photodiode group 11 of several array distribution, and described photodiode group 11 comprises the red photodiode 111, green photodiode 112 and the blue colour photodiode 113 that are arranged in order; The below of the exit facet of each described transmission grating 31 is provided with the described photodiode group 11 of row, and the red photodiode 111 of described photodiode group 11 corresponds to the ruddiness outgoing district of described transmission grating 31, the green photodiode 112 of described photodiode group 11 corresponds to the green glow outgoing district of described transmission grating 31, and the blue colour photodiode 113 of described photodiode group 11 corresponds to the blue light outgoing district of described transmission grating 31.
Preferably, the bore of described photodiode 111,112,113 is all less than 2um.
As shown in Figure 1, preferably, described microlens layer 2 between described smooth filter course 3 and substrate layer 1, and is provided with a described collector lens 21 to first embodiment above each photodiode 111,112,113, the bore of described collector lens 21 is 2um.
Preferably, described microlens layer 2 also comprises light transmission film material 22, and described light transmission film material 22 applies the upper surface with described collector lens 21, obtains smooth microlens layer 2 upper surface.
Preferably, described substrate layer 1 also comprises metal grate 12, described metal grate 12 is arranged between adjacent two photodiodes 111,112,113, and two surfaces up and down of described metal grate 12 are in same level with two surfaces up and down of described substrate layer 1 respectively.
As shown in Figure 2, preferably, described smooth filter course 3 is between described microlens layer 2 and substrate layer 1, and the top of the plane of incidence of each transmission grating 31 is provided with the described collector lens 21 of row, and the bore of described collector lens 21 is 6um for second embodiment.
Preferably, described substrate layer 1 also comprises metal grate 12, and described metal grate 12 is arranged between adjacent two photodiode groups 11, and two surfaces up and down of described metal grate 12 are in same level with two surfaces up and down of described substrate layer 1 respectively.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a CMOS, is characterized in that, comprise substrate layer (1) and be positioned at described substrate layer (1) top microlens layer (2) and light filter course (3);
Described microlens layer (2) comprises the collector lens (21) of several array distribution;
Described smooth filter course (3) comprises the transmission grating (31) of several array distribution;
Described substrate layer (1) comprises the photodiode group (11) of several array distribution, and described photodiode group (11) comprises the red photodiode (111), green photodiode (112) and the blue colour photodiode (113) that are arranged in order; The below of the exit facet of each described transmission grating (31) is provided with the described photodiode group (11) of row, and the red photodiode (111) of described photodiode group (11) is corresponding to the ruddiness outgoing district of described transmission grating (31), the green photodiode (112) of described photodiode group (11) is corresponding to the green glow outgoing district of described transmission grating (31), and the blue colour photodiode (113) of described photodiode group (11) is corresponding to the blue light outgoing district of described transmission grating (31).
2. a kind of CMOS according to claim 1, it is characterized in that, the bore of described photodiode (111,112,113) is all less than 2um.
3. a kind of CMOS according to claim 2, it is characterized in that, described microlens layer (2) is positioned between described smooth filter course (3) and substrate layer (1), and each photodiode (111,112,113) top is provided with a described collector lens (21), the bore of described collector lens (21) is 2um.
4. a kind of CMOS according to claim 3, it is characterized in that, described microlens layer (2) also comprises light transmission film material (22), described light transmission film material (22) coating and the upper surface of described collector lens (21), obtain smooth microlens layer (2) upper surface.
5. a kind of CMOS according to claim 3, it is characterized in that, described substrate layer (1) also comprises metal grate (12), described metal grate (12) is arranged between adjacent two photodiodes (111,112,113), and two surfaces up and down of described metal grate (12) are in same level with two surfaces up and down of described substrate layer (1) respectively.
6. a kind of CMOS according to claim 2, it is characterized in that, described smooth filter course (3) is positioned between described microlens layer (2) and substrate layer (1), and the top of the plane of incidence of each transmission grating (31) is provided with the described collector lens of row (21), the bore of described collector lens (21) is 6um.
7. a kind of CMOS according to claim 6, it is characterized in that, described substrate layer (1) also comprises metal grate (12), described metal grate (12) is arranged between adjacent two photodiode groups (11), and two surfaces up and down of described metal grate (12) are in same level with two surfaces up and down of described substrate layer (1) respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510765705.7A CN105428377A (en) | 2015-11-11 | 2015-11-11 | CMOS image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510765705.7A CN105428377A (en) | 2015-11-11 | 2015-11-11 | CMOS image sensor |
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| Publication Number | Publication Date |
|---|---|
| CN105428377A true CN105428377A (en) | 2016-03-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510765705.7A Pending CN105428377A (en) | 2015-11-11 | 2015-11-11 | CMOS image sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109713055A (en) * | 2017-10-20 | 2019-05-03 | 英飞凌科技德累斯顿公司 | Lenticule with DNAcarrier free optical interference filter |
| CN110446950A (en) * | 2017-03-29 | 2019-11-12 | 富士胶片株式会社 | Structural body and optical sensor |
| WO2020238576A1 (en) * | 2019-05-31 | 2020-12-03 | Oppo广东移动通信有限公司 | Complementary metal oxide image sensor, image processing method, and storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1862823A (en) * | 2005-05-10 | 2006-11-15 | 三星电子株式会社 | Image sensor having embedded lens |
| CN1971927A (en) * | 2005-07-21 | 2007-05-30 | 索尼株式会社 | Physical information acquiring method, physical information acquiring device and semiconductor device |
| CN102197486A (en) * | 2008-11-13 | 2011-09-21 | 全视科技有限公司 | Image sensors having gratings for color separation |
| CN104637968A (en) * | 2015-02-15 | 2015-05-20 | 格科微电子（上海）有限公司 | Image sensor adopting deep groove isolation and manufacturing method thereof |
| EP3147646A1 (en) * | 2015-09-23 | 2017-03-29 | Commissariat à l'énergie atomique et aux énergies alternatives | Imaging device with no lens and associated observation method |
-
2015
- 2015-11-11 CN CN201510765705.7A patent/CN105428377A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1862823A (en) * | 2005-05-10 | 2006-11-15 | 三星电子株式会社 | Image sensor having embedded lens |
| CN1971927A (en) * | 2005-07-21 | 2007-05-30 | 索尼株式会社 | Physical information acquiring method, physical information acquiring device and semiconductor device |
| CN102197486A (en) * | 2008-11-13 | 2011-09-21 | 全视科技有限公司 | Image sensors having gratings for color separation |
| CN104637968A (en) * | 2015-02-15 | 2015-05-20 | 格科微电子（上海）有限公司 | Image sensor adopting deep groove isolation and manufacturing method thereof |
| EP3147646A1 (en) * | 2015-09-23 | 2017-03-29 | Commissariat à l'énergie atomique et aux énergies alternatives | Imaging device with no lens and associated observation method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110446950A (en) * | 2017-03-29 | 2019-11-12 | 富士胶片株式会社 | Structural body and optical sensor |
| CN110446950B (en) * | 2017-03-29 | 2021-12-28 | 富士胶片株式会社 | Structure and optical sensor |
| US11550085B2 (en) | 2017-03-29 | 2023-01-10 | Fujifilm Corporation | Structure and optical sensor |
| CN109713055A (en) * | 2017-10-20 | 2019-05-03 | 英飞凌科技德累斯顿公司 | Lenticule with DNAcarrier free optical interference filter |
| WO2020238576A1 (en) * | 2019-05-31 | 2020-12-03 | Oppo广东移动通信有限公司 | Complementary metal oxide image sensor, image processing method, and storage medium |
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Application publication date: 20160323 |
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