CN105425537A - Mask and manufacturing method therefor - Google Patents
Mask and manufacturing method therefor Download PDFInfo
- Publication number
- CN105425537A CN105425537A CN201510976247.1A CN201510976247A CN105425537A CN 105425537 A CN105425537 A CN 105425537A CN 201510976247 A CN201510976247 A CN 201510976247A CN 105425537 A CN105425537 A CN 105425537A
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- CN
- China
- Prior art keywords
- opening
- openings
- mask plate
- mask
- graphene layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Abstract
The invention provides a mask. The mask comprises a skeleton layer, a binder layer and a graphene layer that are arranged in a laminated manner; a plurality of pass-through first openings, second openings and third openings are formed in the skeleton layer, the binder layer and the graphene layer respectively; and the first openings, second openings and third openings are formed in a pass-through manner in a direction perpendicular to the plane of the mask. The graphene layer is adhered to the skeleton layer through the binder layer; the mask is light in mass, high in intensity, low in raw material cost, and is not damaged easily in use and cleaning processes, so that the use cost of the mask is effectively reduced; the size of the opening of the mask is controlled by the third openings; the mask is large in opening area, accurate in positioning and high in resolution; according to the manufacturing method for the mask, the graphene layer is formed on the binder layer through a laminating process; the first openings are formed through an etching process or an electroforming process; and the second openings are formed through a photoetching process. The manufacturing method is simple in process and low in precision requirements, and the production cost is effectively reduced.
Description
Technical field
The present invention relates to organic photoelectric field, be specifically related to a kind of compound mask plate and preparation method thereof.
Background technology
Organic electroluminescence device (English full name OrganicLight-EmittingDevice is called for short OLED) is active illuminating device, has the advantages such as low-power consumption, colour gamut is wide, volume is thinner, is expected to become main flow of future generation illumination and flat panel display.The need of production of the OLED display panel of current high pixel density adopts very thin thickness, fine metal mask plate (FineMetalMask that thermal expansivity is little, FMM) mask plate (or claiming planar mask) is used as, the organic luminorphor be used in evaporation OLED display panel pixel cell.
OLED fine metal mask plate uses invar alloy (INVAR usually, also known as invar) generally prepared by the method for wet etching, first at invar alloy surface coating light-sensitive surface, by the mode of exposure, the fine pattern of mask plate is shifted on light-sensitive surface, more finally make fine metal mask plate by the mode of development and wet etching.
Because the perforate on the mask plate of Invar material is all very little, the positioning accurate accuracy of wet etching is poor, easily causes the position of the perforate finally obtained and size to have relatively large deviation.In addition, the mask plate of invar alloy material is heavier, and it is fixed on along with Applicative time is more and more longer on stainless steel frame, and also worse and worse, the perforate therefore on mask plate also may offset relative to the position of substrate fastness; Add installation deviation, very easily cause FMM method cannot realize the evaporation of high resolving power screen body, the highest resolution of the screen body that FMM method is prepared is only 320PPI (PixelsPerInch, the number of pixels that per inch has) left and right.
In addition, in the preparation process of OLED, at set intervals just must by cleaning the defect stoping the pattern in fine metal mask plate to cause because of residuals, cleaning course very easily causes the damage of some elementary area in fine metal mask plate, therefore fine metal mask plate just must be changed, for the costs rather expensive of fine metal mask plate for approximately every two months.
For this reason, how to improve the resolution of fine metal mask plate, improving its intensity simultaneously, reducing manufacturing cost is industry problem demanding prompt solution.
Summary of the invention
For this reason, to be solved by this invention is the problem that in prior art, fine metal mask plate resolution is low, intensity is low, cost is high, and then provides a kind of resolution is high, intensity is large, cost is low compound mask plate and preparation method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of mask plate of the present invention, comprises the casing play of stacked setting, adhesive phase and graphene layer; Offer some the first through openings in described casing play, in described adhesive phase, offer some the second through openings, in described graphene layer, offer some the 3rd through openings; Described first opening, described second opening, described 3rd opening are perpendicular to the through setting in the in-plane direction of described mask plate.
The aperture area of described first opening is more than or equal to the aperture area of described second opening.
The aperture area of described second opening is greater than the aperture area of described 3rd opening.
Described graphene layer thickness is 0.01 μm ~ 5 μm.
Described casing play is invar alloy-layer, and thickness is 10 μm ~ 30 μm.
Described adhesive phase is photoresist layer, and thickness is 0.5 μm ~ 15 μm.
The preparation method of mask plate of the present invention, comprises the steps:
S1, prepare casing play, and in described casing play, offer some its first openings through;
S2, on described casing play, form adhesive phase, and in described adhesive phase, offer some its second openings through, described second opening is arranged on the vertical direction of described first opening;
S3, on described adhesive phase, form graphene layer, and in described graphene layer, offer some its 3rd openings through, described 3rd opening is arranged on the vertical direction of described second opening.
In described step S3, described graphene layer is formed on described adhesive phase by process for pressing.
In described step S1, described first opening is formed by etching technics or electroforming process.
In described step S2, described second opening is formed by photoetching process.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of mask plate of the present invention, comprises the casing play of stacked setting, adhesive phase and graphene layer; Offer some the first through openings in described casing play, in described adhesive phase, offer some the second through openings, in described graphene layer, offer some the 3rd through openings; Described first opening, described second opening, described 3rd opening are perpendicular to the through setting in the in-plane direction of described mask plate.Described graphene layer sticks on described casing play by described adhesive phase, and quality is light, intensity is large, raw materials cost is low, use and cleaning process in not fragile, effectively reduce the use cost of described mask plate.The openings of sizes of described mask plate is controlled by the 3rd opening be arranged in described graphene layer, and aperture area is large, registration, resolution are high.
2, a kind of mask plate of the present invention, the aperture area of described first opening is more than or equal to the aperture area of described second opening, and the aperture area of described second opening is greater than the aperture area of described 3rd opening; Described first opening, described second aperture area are large, preparation accuracy requirement is low, effectively improve product yield, reduce production cost simultaneously.
3, a kind of mask plate of the present invention, described casing play is invar alloy-layer, and thickness is 10 μm ~ 30 μm, described graphene layer thickness is 0.01 μm ~ 5 μm, described adhesive phase is photoresist layer, and thickness is 0.5 μm ~ 15 μm, for described mask plate provides effective working strength.
4, the preparation method of mask plate of the present invention, described graphene layer is formed on described adhesive phase by process for pressing, described first opening is formed by etching technics or electroforming process, described second opening is formed by photoetching process, technique is simple, accuracy requirement is low, effectively reduces production cost.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is mask structure being schematic diagram of the present invention;
Fig. 2 is the process flow diagram of the preparation method of mask plate of the present invention;
In figure, Reference numeral is expressed as: 1-casing play, 2-adhesive phase, 3-graphene layer, 4-first opening, 5-second opening, 6-the 3rd opening.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.
Below in conjunction with Fig. 1 and Fig. 2 detailed description according to a kind of mask plate of the embodiment of the present invention and preparation method thereof.
As shown in Figure 1, the mask plate described in the present embodiment, comprises the casing play 1 of stacked setting, adhesive phase 2 and graphene layer 3.Graphene thermal stability is very good, is not easy to occur thermal-induced deformation, can keep the stability of self structure in the pyroprocess of evaporation process, and preferably, described graphene layer 3 thickness is 0.01 μm ~ 5 μm.Described casing play 1 is invar alloy-layer, and thickness is 10 μm ~ 30 μm; Invar alloy (invar, also referred to as invar), be a kind of Rhometal, its composition is nickel 36wt%, iron 63.8wt%, carbon 0.2wt%, its thermal expansivity is extremely low, can keep regular length in very wide temperature range, even close to zero expansion coefficient, the stability of self structure can be kept in the pyroprocess of evaporation process, effectively increase the service precision of described mask plate.Described adhesive phase 2 is photoresist layer, and thickness is 5 μm ~ 15 μm.As the preferred embodiments of the present invention, in the present embodiment, described graphene layer 3 thickness is 0.05 μm; Described casing play 1 thickness is 15 μm; Described adhesive phase 2 thickness is 2 μm.
Offer some the first through openings 4 in described casing play 1, in described adhesive phase 2, offer some the second through openings 5, in described graphene layer 3, offer some the 3rd through openings 6; Described first opening 4, described second opening 5, described 3rd opening 6 are perpendicular to described mask plate institute through mask plate in the in-plane direction.The aperture area of described first opening 4 is more than or equal to the aperture area of described second opening 5; The aperture area of described second opening 5 is greater than the aperture area of described 3rd opening 6.Shape and the size of described first opening 4, described second opening 5, described 3rd opening 6 are determined according to demand during actual evaporation; its shape is selected from arbitrary shapes such as being not limited to square, rectangle, circle; all can realize object of the present invention, belong to protection scope of the present invention.
The preparation method of described mask plate, as shown in Figure 2, comprises the steps:
S1, prepare casing play 1, and in described casing play 1, offer some its first openings 4 through; Described first opening 4 is formed by etching technics or electroforming process, and the present embodiment is formed preferably by etching technics.
S2, form adhesive phase 2 at described casing play 1, and in described adhesive phase 2, offer some its second openings 5 through, described second opening 5 is arranged on the vertical direction of described first opening 4; In the present embodiment, shown adhesive phase 4 is preferably photoresist layer, and can pass through photoetching process Subgraph patterning, therefore, described second opening 5 is formed preferably by photoetching process.
S3, on described adhesive phase 2, form graphene layer 3, and in described graphene layer 3, offer some its 3rd openings 6 through, described 3rd opening 6 is arranged on the vertical direction of described second opening 5.Preferably, in the present embodiment, described graphene layer 3 is formed on described adhesive phase 2 by process for pressing, effectively enhances the adhesive strength of described graphene layer 3 on described casing play 1.Described 3rd opening 6 is formed by laser boring, forms described mask plate opening, because Graphene has splendid thermal stability, in drill process, not easily occurs thermal-induced deformation, effectively ensure that opening rule degree and the precision of described mask plate.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (10)
1. a mask plate, is characterized in that, comprises the casing play (1) of stacked setting, adhesive phase (2) and graphene layer (3); Some through the first openings (4) are offered in described casing play (1), offer some through the second openings (5) in described adhesive phase (2), in described graphene layer (3), offer some the 3rd through openings (6); Described first opening (4), described second opening (5), described 3rd opening (6) are perpendicular to the through setting in the in-plane direction of described mask plate.
2. mask plate according to claim 1, is characterized in that, the aperture area of described first opening (4) is more than or equal to the aperture area of described second opening (5).
3. mask plate according to claim 1 and 2, is characterized in that, the aperture area of described second opening (5) is greater than the aperture area of described 3rd opening (6).
4. the mask plate according to any one of claim 1-3, is characterized in that, described graphene layer (3) thickness is 0.01 μm ~ 5 μm.
5. the mask plate according to any one of claim 1-4, is characterized in that, described casing play (1) is invar (invar) alloy-layer, and thickness is 10 μm ~ 30 μm.
6. the mask plate according to any one of claim 1-5, is characterized in that, described adhesive phase (2) is photoresist layer, and thickness is 0.5 μm ~ 15 μm.
7. a preparation method for the mask plate described in any one of claim 1-6, is characterized in that, comprises the steps:
S1, prepare casing play (1), and in described casing play (1), offer some its first openings (4) through;
S2, on described casing play (1), form adhesive phase (2), and in described adhesive phase (2), offer some its second openings (5) through, described second opening (5) is arranged on the vertical direction of described first opening (4);
S3, on described adhesive phase (2), form graphene layer (3), and in described graphene layer (3), offer some its 3rd openings (6) through, described 3rd opening (6) is arranged on the vertical direction of described second opening (5).
8. the preparation method of mask plate according to claim 7, is characterized in that, in described step S3, described graphene layer (3) is formed on described adhesive phase (2) by process for pressing.
9. the preparation method of the mask plate according to claim 7 or 8, is characterized in that, in described step S1, described first opening (4) is formed by etching technics or electroforming process.
10. the preparation method of the mask plate according to any one of claim 7-9, is characterized in that, in described step S2, described second opening (5) is formed by photoetching process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510976247.1A CN105425537B (en) | 2015-12-23 | A kind of mask plate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510976247.1A CN105425537B (en) | 2015-12-23 | A kind of mask plate and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105425537A true CN105425537A (en) | 2016-03-23 |
| CN105425537B CN105425537B (en) | 2019-07-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108531855A (en) * | 2018-05-31 | 2018-09-14 | 昆山国显光电有限公司 | The manufacturing method of mask plate, evaporation coating device and display device |
| WO2023005845A1 (en) * | 2021-07-30 | 2023-02-02 | 合肥本源量子计算科技有限责任公司 | Hard mask and preparation method therefor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856354A (en) * | 2011-06-27 | 2013-01-02 | 三星电子株式会社 | Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device |
| CN103124927A (en) * | 2010-09-29 | 2013-05-29 | 英派尔科技开发有限公司 | Optical lithography using graphene contrast enhancement layer |
| CN103757588A (en) * | 2013-12-30 | 2014-04-30 | 昆山工研院新型平板显示技术中心有限公司 | Mask and preparation method and application of mask |
| US20140220481A1 (en) * | 2013-02-01 | 2014-08-07 | Samsung Electronics Co., Ltd. | Photomasks and methods of fabricating semiconductor devices using the same |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103124927A (en) * | 2010-09-29 | 2013-05-29 | 英派尔科技开发有限公司 | Optical lithography using graphene contrast enhancement layer |
| CN102856354A (en) * | 2011-06-27 | 2013-01-02 | 三星电子株式会社 | Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device |
| US20140220481A1 (en) * | 2013-02-01 | 2014-08-07 | Samsung Electronics Co., Ltd. | Photomasks and methods of fabricating semiconductor devices using the same |
| CN103757588A (en) * | 2013-12-30 | 2014-04-30 | 昆山工研院新型平板显示技术中心有限公司 | Mask and preparation method and application of mask |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108531855A (en) * | 2018-05-31 | 2018-09-14 | 昆山国显光电有限公司 | The manufacturing method of mask plate, evaporation coating device and display device |
| WO2023005845A1 (en) * | 2021-07-30 | 2023-02-02 | 合肥本源量子计算科技有限责任公司 | Hard mask and preparation method therefor |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: The invention relates to a mask plate and a preparation method thereof Effective date of registration: 20201221 Granted publication date: 20190716 Pledgee: Xin Xin Finance Leasing Co.,Ltd. Pledgor: KunShan Go-Visionox Opto-Electronics Co.,Ltd. Registration number: Y2020980009652 |
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