CN105420672A - Method for preparing Bi1.5MgNb1.5O7 (BMN) thin film - Google Patents
Method for preparing Bi1.5MgNb1.5O7 (BMN) thin film Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
The invention discloses a method for preparing a Bi1.5MgNb1.5O7 (BMN) thin film. The method includes the steps that a pre-treated substrate is fixed to a base plate support, and a molecular pump is started to perform vacuum pumping on a sputtering cavity; when the cavity reaches base pressure, argon gas is fed into the sputtering cavity, and the substrate is cleaned through high pressure; the high pressure is closed, a substrate rotating motor is started, and the rotating speed of the substrate is adjusted to 30rpm; when the substrate temperature reaches the experiment temperature, a baffle of a target material is closed, and the radio-frequency power is adjusted; high-purity oxygen is fed, a flowmeter is adjusted, the Ar/O2 volume ratio is set, and the air pressure of the cavity is made to reach the sputtering pressure which is 4.0Pa; the substrate voltage is adjusted to 80-150V, the baffle is opened, and film plating is started; and annealing is performed for 30min under the 700-DEG C oxygen atmosphere so as to obtain the crystallized thin film. The BMN thin film prepared through the method is high in preferred orientation tendency, the surface roughness is 3.53nm, and the maximum dielectric constant and the minimum dielectric loss of the thin film are achieved.
Description
Technical field
The invention belongs to sputter coating, particularly relate to a kind of preparation method of BMN film.
Background technology
Target is the sputtering source of magnetron sputtering plating, the performance of quality to film of target plays vital effect, therefore the target of high-quality is the prerequisite and the basis that ensure film quality, large quantity research shows, affect target product qualitative factor to mainly contain: purity, density, structural approach, grain size and distribution, size, shape etc., wherein weigh the homogeneity of relative density, purity, crystalline orientation and the microtexture thereof that the most important index of target quality is target.Sputter procedure is very high to the requirement of the density of target, if the compactness of target material structure is poor, has the Ar of high-energy-density
+during bombardment target, peeling off of target surface bulk matter can be caused, thus make film surface have more macrobead.This will have a strong impact on the planeness of film surface, finally cause the deterioration of film performance.In addition, the Ar of high-energy-density in magnetron sputtering process
+bombardment, also can cause the intensification of target, in order to bear the thermal stresses of target inside better, therefore needs the target obtaining high-density and high strength.The purity of target is one of main performance index of target quality.The quality of film performance is to a great extent by the impact of target purity.The primary pollution source of sputter-deposited thin films is the impurity in target and the oxygen G&W in target pore.In practical application, the purposes of target has different requirements to its impurities content.The homogeneity of target microtexture is also one of performance index of the quality critical of magnetron sputtering plating.Target microtexture is even, grain-size difference is less, and the film thickness that so magnetron sputtering is obtained is more even.In addition, the target that crystal grain is tiny, its sputter rate is generally fast than the sputter rate of the target of coarse grains.During spatter film forming, the atom of target easily sputters out along cube the most compact arranged orientation preferentially for atom, for reaching higher sputter rate, can increase sputter rate by the crystalline texture changing target.In addition, the homogeneity of crystallization direction to sputtered film thickness of target also has a significant impact.Therefore, it is vital for controlling the crystalline orientation of target by process adjustments.Therefore, sputtering method is adopted to prepare Bi
1.5mgNb
1.5o
7first film, must prepare high-quality target.
In sputter coating process, the energy of sputtering particle is except being subject to sputtering pressure and the impact of sputtering atmosphere ratio, also relevant with sputtering power, in general, the increase that the increase of sputtering power will cause argon molecules to be provoked into the amount of Ar+, the raising of plasma density makes the bombardment effect of ion pair target strengthen, and so will have more atom or small cluster is spilt; The speed of sputtering particle also can increase, thus the energy had when arriving substrate increases, and is conducive to the nucleating growth of ceramic membrane, the final degree of crystallinity improving film.In prior art under room temperature environment, adopt magnetron sputtering method to prepare BMN film on Pt (111)/Ti/SiO2/Si substrate, study and also there is no relevant report from the impact of Substrate negative bias voltage condition on the thing phase composite of BMN film, chemical composition, microscopic appearance and dielectric properties.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of BMN film, be intended to study from the problem of Substrate negative bias voltage condition on the impact of the thing phase composite of BMN film, chemical composition, microscopic appearance and dielectric properties.
The present invention is achieved in that a kind of preparation method of BMN film, and the preparation method of this BMN film comprises:
Cathode target position is installed BMN ceramic target, pretreated substrate is fixed on substrate holder, open molecular pump and sputtering chamber is vacuumized;
Arrive after background vacuum, in sputtering chamber, pass into high-purity argon gas, adjust flux meter makes air pressure, adds high pressure again to clean substrate;
Close high pressure, open substrate rotating machine, regulate substrate rotating speed to be 30rpm;
Underlayer temperature raises, and closes target plate washer, regulates radio frequency power, pre-sputtering 3-5min;
Pass into high purity oxygen gas, adjust flux meter, setting Ar/O
2volume ratio, and make chamber pressure reach the sputtering pressure 4.0Pa of experiment;
Adjustment substrate voltage is 80-150V, opens plate washer, starts plated film;
The 30min that anneals under 700 DEG C of oxygen atmospheres obtains crystallization thin film.
Further, background vacuum is 2.0 × 10
-4pa.
Further, described purity of argon is 99.999%.
Further, described adjust flux meter makes air pressure control at 1.8-2.0Pa, adds high pressure again to carry out cleaning 5-10min to substrate.
Further, described adjustment radio frequency power to 150W, pre-sputtering 3-5min.
Further, described oxygen purity 99.999%.
Further, described Ar/O
2volume ratio is 2:1.
Preparation method's positively effect of BMN film provided by the invention and advantage: 1) under substrates of different negative bias condition, the BMN film of deposition is cubic pyrochlore phase structure.Along with Substrate negative bias voltage is elevated to 120V from 80V, BMN film (222) preferred orientation trend strengthens gradually; But when Substrate negative bias voltage reaches 150V, BMN film is without preferred orientation structure from (222) preferred orientation structural transformation.2) along with the increase of Substrate negative bias voltage, the component of BMN film has almost no change, but the sedimentation rate of film reduces rapidly; The surfaceness of film first reduces rear increase, and when substrate bias is 120V, the surfaceness of BMN film is minimum, is 3.53nm.3) when Substrate negative bias voltage is elevated to 120V from 80V, the dielectric properties of BMN film are improved gradually, when substrate bias is 120V, the specific inductivity of film is maximum (166.4), dielectric loss minimum (0.0038), under the extra electric field of 628kV/cm, its tuning rate is 24.83%.When Substrate negative bias voltage increases to 150V, the dielectric properties of BMN film worsen.
Accompanying drawing explanation
Fig. 1 is preparation method's schema of the BMN film that the embodiment of the present invention provides;
Fig. 2 is the XRD figure of deposition sputtering BMN film under preparation method's substrates of different negative bias of the BMN film that the embodiment of the present invention provides;
In figure: (a) 80V, (b) 100V, (c) 120V, (d) 150V.
Fig. 3 is cation mole ratio (dotted line the represents 1.5 and 3 respectively) figure of deposit film under preparation method's substrates of different negative bias of the BMN film that the embodiment of the present invention provides;
Fig. 4 is the section secondary electron image figure depositing BMN film under preparation method's substrates of different negative bias of the BMN film that the embodiment of the present invention provides;
In figure: (a) 80V, (b) 100V, (c) 120V, (d) 150V.
Fig. 5 is the change curve of sedimentation rate with Substrate negative bias voltage of the preparation method BMN film of the BMN film that the embodiment of the present invention provides;
Fig. 6 is the AFM figure depositing BMN film under preparation method's substrates of different negative bias of the BMN film that the embodiment of the present invention provides;
In figure: (a) 80V, (b) 100V, (c) 120V, (d) 150V.
Fig. 7 is the change curve of rootmean-square with Substrate negative bias voltage of preparation method's roughness of film of the BMN film that the embodiment of the present invention provides;
Fig. 8 is the leakage current density graphic representation depositing BMN film under preparation method's substrates of different negative bias of the BMN film that the embodiment of the present invention provides;
Fig. 9 deposits the specific inductivity of BMN film and the dielectric loss change curve with frequency under preparation method's substrates of different negative bias of the BMN film that the embodiment of the present invention provides; In figure: (a) 10kHz-1MHz, (b) 1MHz-10MHz.
Figure 10 is the specific inductivity of BMN film under 1MHz in the preparation method of the BMN film that the embodiment of the present invention provides and the dielectric loss variation relation figure with Substrate negative bias voltage;
Figure 11 deposits the specific inductivity of BMN film and the dielectric loss change curve with direct current (DC) bias under substrates of different negative bias under 1MHz in the preparation method of the BMN film that the embodiment of the present invention provides.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Below in conjunction with accompanying drawing, application principle of the present invention is described in detail.
As shown in Figure 1, the preparation method of the BMN film of the embodiment of the present invention comprises the following steps:
S101: install BMN ceramic target on cathode target position, is fixed on substrate holder by pretreated substrate, opens molecular pump and vacuumizes sputtering chamber, and background vacuum is 2.0 × 10
-4pa;
S102: after arriving background vacuum, in sputtering chamber, pass into high-purity argon gas, purity is 99.999%, and adjust flux meter makes air pressure control at 1.8-2.0Pa, add high pressure and again cleaning 5-10min is carried out to substrate, the impurity of its surface adsorption during to remove mounting substrates;
S103: close high pressure, open substrate rotating machine, regulates substrate rotating speed to be 30rpm;
S104: after underlayer temperature reaches experimental temperature, first closes target plate washer, regulates radio frequency power to 100W, pre-sputtering 3-5min, to remove the pollutent of target material surface, reaches the object of purification target material surface;
S105: pass into high purity oxygen gas, purity 99.999%, adjust flux meter, setting Ar/O
2volume ratio is 2:1, and makes chamber pressure reach the sputtering pressure 4.0Pa of experiment;
S106: adjustment substrate voltage is 80-150V, opens plate washer, starts plated film;
S107: the 30min that anneals under 700 DEG C of oxygen atmospheres obtains crystallization thin film, and the gauge control of BMN film is within 300nm.
Below in conjunction with test, application principle of the present invention is further described.
In the process of magnetron sputtering plating, heating region is because being subject to the effect in magnetic field, by in the strong region be strapped near target material surface, if the particle be sputtered out is deposited directly to the surface of matrix, then energy is lower because speed is little for particle, and the bonding strength between the film of deposition and substrate is poor, and low energy particle is lower at the transfer ability of substrate surface, easily grow into the film that porous is coarse, the performance of its film must be affected.Addressing this problem the most direct method is apply certain negative bias to substrate.After applying negative bias to substrate, the positively charged ion gone out from target as sputter accelerates to fly to substrate under the effect of electric field, obtains larger surface transport energy; Part Ar+ simultaneously in aura also flies to substrate under the effect of electric field, with film forming atomic interchange energy, and bombards interaction energy and raises substrate temperature to a certain extent, thus be conducive to the growth of film.The experiment of this group, by changing the size of the Substrate negative bias voltage in film deposition process, studies its impact on film phase composite, microscopic appearance and electrical property.Experiment parameter is in table 2.
The preparation parameter of BMN film under table 2 substrates of different negative bias
Test method specifically comprises:
Step one, Substrate negative bias voltage is on the impact of BMN film phase structure:
Fig. 2 be prepare under substrates of different negative bias BMN film annealed after XRD figure.The BMN film deposited under each Substrate negative bias voltage condition is cubic pyrochlore phase structure.When Substrate negative bias voltage is less than 120V, along with the increase of Substrate negative bias voltage, BMN film (222) preferred orientation trend strengthens gradually.But, when Substrate negative bias voltage reaches 150V, the oriented structure generation considerable change of BMN film, stronger (511) peak has been there is in XRD figure, show the increase along with Substrate negative bias voltage, the preferred texture of BMN film changes, this is because and Substrate negative bias voltage is excessive causes Ar+ excessive bombardment substrate, destroy the original degree of alignment of film forming particle, that is the continuous bombardment of high energy particle causes grain orientation to be destroyed, and thus causes BMN film to present without preferred orientation structure.This structure is unfavorable for the increase of BMN thin-film dielectric tuning rate, and therefore, magnetron sputtering method is prepared in the process of BMN film, and the setting of Substrate negative bias voltage is also unsuitable excessive.
Step 2, the impact that Substrate negative bias voltage forms BMN film:
The mol ratio of each element of BMN film is deposited as shown in Figure 3 under substrates of different negative bias condition.In experiment, in the BMN film deposited under each Substrate negative bias voltage condition, change of component is very little, therefore can think that the impact of Substrate negative bias voltage on BMN film composition is little.
Step 3, Substrate negative bias voltage is on the impact of BMN film deposition rate:
Fig. 4 (a)-(d) is for depositing the section secondary electron image of BMN film under substrates of different negative bias, the thickness of BMN film prepared by each Substrate negative bias voltage all controls at about 300nm.Calculate the sedimentation rate of BMN film under substrates of different negative bias, as shown in Figure 5, along with the increase of Substrate negative bias voltage, the sedimentation rate of BMN film continues to reduce, this is because the increase of Substrate negative bias voltage causes Ar+ to fly to substrate under electric field action, the Ar+ quantity of therefore bombarding target reduces relatively, and directly cause the sputtering productive rate of target to reduce, the sedimentation rate of BMN film reduces rapidly.In experiment, we also observe simultaneously, and when not applying bias voltage to substrate, the plasma glow brightness in sputtering chamber is very strong; Once after applying bias voltage to substrate, the brightness of plasma glow obviously weakens.After showing to apply bias voltage to substrate, the Ar+ quantity of bombardment target reduces, and the secondary electron number of so overflowing from target reduces, and cause the Ar+ concentration ionized also to reduce, such vicious cycle finally causes the sedimentation rate of film significantly to reduce thereupon.
Step 4, Substrate negative bias voltage is on the impact of BMN film surface appearance:
Fig. 6 is surface topography after the BMN Thin-film anneal deposited under substrates of different voltage and roughness rootmean-square thereof.When Substrate negative bias voltage increases to 100V from 80V, the surface topography of BMN film changes obvious elongated fibrous structure into from random sheet.When Substrate negative bias voltage is 80V, film forming particle energy is lower, limited at the transfer ability of substrate surface; And now the sedimentation rate of BMN film quickly (as shown in Figure 4,5), make the film forming particle arriving substrate not have time enough to be diffused into the lower position of energy, add the impact of shade influence, film forming particle is piled into sheet gradually.When Substrate negative bias voltage increases to 100V, the refinement of film surface crystal grain is because Ar+ can be introduced [11-13] among surface imperfection by Substrate negative bias voltage, and the Ar+ defective locations introduced will become " trap center ", be easy to " catching " atomic group thus form nucleus; The increase of Substrate negative bias voltage causes Ar+ defective locations to increase, and its nucleation rate also just increases, therefore grain refining.When Substrate negative bias voltage increases to 150V gradually from 100V, BMN film surface is still filamentary structure, but is not difficult to find out that fiber surrounding cavity reduces gradually.This is because along with the further increase of Substrate negative bias voltage, the film forming particle exchange energy of Ar+ and substrate surface, its dispersion surface energy of film forming particle now obtaining energy is very strong; And the now reduction of sedimentation rate, also for film forming particle provides longer transition time, therefore the film forming particle fiberfill fibers shape space of organizing ambient energy lower gradually, makes film closely knit gradually.The surfaceness of BMN film first reduces the variation tendency (as shown in Figure 7) that increases afterwards along with the increase performance of Substrate negative bias voltage.This is due in film deposition process, certain negative bias is applied to substrate, Ar+ is made to fly to substrate surface under electric field action, some of so substrate surface stain particle due to the sticking power with substrate not strong, the impact being subject to Ar+ is departed from substrate, thus improve the surface clearness of substrate, be conducive to the planeness improving film.When substrate bias is 120V, the surfaceness of the BMN film of deposition is minimum, is 3.53nm.When Substrate negative bias voltage increases to 150V, the roughness of film increases on the contrary, and this is because Ar+ is under the acceleration of electric field, energy is excessive, and Ar+, to the excessive bombardment of film surface, destroys the film surface grown, produce etching action, thus cause the increase of BMN Film roughness.
Step 5, Substrate negative bias voltage is on the impact of BMN thin-film electro performance:
Fig. 8 is the leakage current density curve of the BMN film deposited under substrates of different negative bias.Along with the increase of additional Substrate negative bias voltage, the leakage current density of BMN film roughly presents the variation tendency first reducing to increase afterwards.This is because along with the introducing of substrate bias electric field, the surface finish of BMN film is improved, and this is favourable to the preparation of BMN film top electrode, the therefore corresponding reduction of the leakage current density of BMN film.But when Substrate negative bias voltage reaches 150V, Ar+ causes again the corresponding increase of the leakage current density of BMN film to the etching action of film surface.Under the extra electric field of 300kV/cm, the leakage current density size of BMN film is all at 10-6 ~ 10-5A/cm2 order of magnitude.
Fig. 9 is the specific inductivity of the BMN film deposited under substrates of different negative bias condition and the dielectric dielectric loss change curve with frequency.Within the scope of the test frequency of 10kHz – 1MHz, Substrate negative bias voltage is that the specific inductivity of the BMN film deposited under the condition of 80-120V changes with the change of frequency hardly, and the specific inductivity of the BMN film that substrate bias deposits when being 150V linearly reduces along with the increase of test frequency, but this reduction amplitude little (as Suo Shi Fig. 9 (a)).And when test frequency is elevated to 1MHz – 10MHz, the specific inductivity of the BMN film that substrate bias deposits when being 150V reduces rapidly along with the increase of test frequency, particularly in the range of frequency of 1MHz – 5MHz, its dielectric constant values is reduced to 70 rapidly from 137, reduces nearly 50%; And after 5MHz, its dielectric constant values tends towards stability (as Suo Shi Fig. 9 (b)), occur that the reason of this phenomenon probably changes relevant with the crystalline orientation of the BMN film deposited during 150V.
Figure 10 is the specific inductivity of BMN film under 1MHz and the dielectric loss variation relation curve with Substrate negative bias voltage.Substrate negative bias voltage is in the scope of 80V – 120V, and the specific inductivity of the BMN film of deposition and dielectric loss size differ very little, and when substrate bias is 120V, the specific inductivity of film is 166.4, and dielectric loss is 0.0038; And after Substrate negative bias voltage is elevated to 150V, the specific inductivity of BMN film is reduced to 132, dielectric loss increases to 0.011.The change of hint BMN thin film crystallization orientation causes the deterioration of its dielectric properties.
Figure 11 deposits the specific inductivity of BMN film and the dielectric loss change curve with direct current (DC) bias field under substrates of different negative bias under 1MHz.Within the scope of the Substrate negative bias voltage of 80V-150V, the withstand voltage field intensity change of BMN film is very little, but the change of its dielectric tuning rate is very large, and the adjustable rate of dielectric of film presents the trend of first increases and then decreases along with the increase of Substrate negative bias voltage.When Substrate negative bias voltage is 80V, 100V, 120V, the dielectric of deposit film under its breaking down field strength is adjustable, and rate is respectively 8.89%, 21.38% and 24.83%, but when Substrate negative bias voltage increases to 150V, the adjustable rate maximum value of dielectric of BMN film is reduced to 2.63% rapidly.Prove that certain Substrate negative bias voltage is conducive to improving the dielectric tuning rate of BMN film, but too high Substrate negative bias voltage also can cause the deterioration of BMN thin-film dielectric performance.
Clean the carrying out of substrate in this test, concrete steps are as follows:
First substrate is put into acetone soln, removed the organism remaining in substrate surface by ultrasonic cleaning 20min; Then take out substrate with tweezers and put into ethanolic soln, by ultrasonic cleaning 15min to remove residual acetone; Finally substrate is put into deionized water, same ultrasonic cleaning 15min.Washed substrate dry for standby.
Plate capacitor structure (Metal-Insulator-Metal, MIM) is adopted to carry out electric performance test to film in this test.Pt bottom electrode is directly provided by purchased substrate, and upper current conducting cap is by the preparation of JFC-1600 type ion sputtering instrument.The mask plate being covered with certain size aperture is covered on BMN film, utilizes ion sputtering instrument that Pt is deposited to film surface, take off the point-like upper current conducting cap Pt (being of a size of 100 μm × 100 μm) that mask plate can obtain separation.Anneal film in 330 DEG C of retort furnaces after making electrode 30min, to eliminate the stress between electrode and BMN film.
Characterizing method adopts X-ray diffractometer (ARLX'TRA, ThermoElectronCo., Switzerland) thing of BMN film is identified mutually, x-ray source adopts Cu target K α line, wavelength X=0.15406nm, the working parameter of instrument is: acceleration voltage is 40kV, and working current is 35mA, sweep velocity is 10 °/min, and scanning angle scope is 10 ° ~ 60 °.Analyzed by atomic force microscope (AFM, AutoCPReaserch, the America) surface topography to BMN film sample, scan mode is tapping-mode, and sweep limit is 5 μm × 5 μm, and sweep rate is 2Hz; Needle point adopts Si
3n
4material, needle type radius is 40nm.Xray fluorescence spectrometer (XRF, ARL9900XRF, ThermoScientific, the Switzerland) elemental composition to film is adopted to analyze.The leakage current characteristic of BMN film sample is obtained by ferroelectric test macro (PremierIIRadiant, SIOSMe β technikGmbh, America) test.Tested by the dielectric properties of precise impedance analyser (Agilent4294A, America) to BMN film sample.The dielectric loss recorded is the tangent value (tan δ) of effective loss, represents with following formula:
In formula, ε ' and ε " represents real part and the imaginary part of effective dielectric constant respectively.Here tan δ include dielectric loss and conductance loss, be referred to as dielectric loss.
By testing its tuning capability of C-V curve assessment obtained, calculation formula is as follows:
In formula, τ is the dielectric tuning rate of film, C
0for the capacitance of film when extra electric field is zero, C
vfor extra electric field value maximum time film capacitance.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a preparation method for BMN film, is characterized in that, the preparation method of this BMN film comprises:
Cathode target position is installed BMN ceramic target, pretreated substrate is fixed on substrate holder, open molecular pump and sputtering chamber is vacuumized;
Arrive after background vacuum, in sputtering chamber, pass into high-purity argon gas, adjust flux meter makes air pressure, adds high pressure again to clean substrate;
Close high pressure, open substrate rotating machine, regulate substrate rotating speed to be 30rpm;
Underlayer temperature raises, and closes target plate washer, regulates radio frequency power, pre-sputtering 3-5min;
Pass into high purity oxygen gas, adjust flux meter, setting Ar/O
2volume ratio, and make chamber pressure reach the sputtering pressure 4.0Pa of experiment;
Adjustment substrate voltage is 80-150V, opens plate washer, starts plated film;
The 30min that anneals under 700 DEG C of oxygen atmospheres obtains crystallization thin film.
2. the preparation method of BMN film as claimed in claim 1, it is characterized in that, background vacuum is 2.0 × 10
-4pa.
3. the preparation method of BMN film as claimed in claim 1, it is characterized in that, described purity of argon is 99.999%.
4. the preparation method of BMN film as claimed in claim 1, it is characterized in that, described adjust flux meter makes air pressure control at 1.8-2.0Pa, adds high pressure again to carry out cleaning 5-10min to substrate.
5. the preparation method of BMN film as claimed in claim 1, is characterized in that, described adjustment radio frequency power to 150W, pre-sputtering 3-5min.
6. the preparation method of BMN film as claimed in claim 1, is characterized in that, described oxygen purity 99.999%.
7. the preparation method of BMN film as claimed in claim 1, is characterized in that, described Ar/O
2volume ratio is 2:1.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111876755A (en) * | 2020-07-15 | 2020-11-03 | 齐鲁工业大学 | BMN multilayer dielectric film and preparation method thereof |
| CN111876756A (en) * | 2020-07-15 | 2020-11-03 | 齐鲁工业大学 | BMN multilayer dielectric film and preparation method thereof |
| CN114686825A (en) * | 2020-12-30 | 2022-07-01 | 富联裕展科技(深圳)有限公司 | Method for controlling PVD coating |
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| CN111876756B (en) * | 2020-07-15 | 2022-02-11 | 齐鲁工业大学 | BMN multilayer dielectric film and preparation method thereof |
| CN111876755B (en) * | 2020-07-15 | 2022-02-18 | 齐鲁工业大学 | BMN multilayer dielectric film and preparation method thereof |
| CN114686825A (en) * | 2020-12-30 | 2022-07-01 | 富联裕展科技(深圳)有限公司 | Method for controlling PVD coating |
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