CN105406349A - Recycle method of semiconductor laser drying tube - Google Patents
Recycle method of semiconductor laser drying tube Download PDFInfo
- Publication number
- CN105406349A CN105406349A CN201510915810.4A CN201510915810A CN105406349A CN 105406349 A CN105406349 A CN 105406349A CN 201510915810 A CN201510915810 A CN 201510915810A CN 105406349 A CN105406349 A CN 105406349A
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- drying
- drying box
- drying tube
- tube
- vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B9/00—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
- F26B9/06—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Drying Of Solid Materials (AREA)
Abstract
The invention aims at a preparation process of a thermal barrier coating, and relates to a recycle method of a semiconductor laser drying tube. The recycle method is characterized by comprising the following steps of cleaning objects in a drying box, separating the drying tube, dispersing a part containing drying powder and a drying tube outer sleeve in the vacuum-pumping drying box, carrying out vacuum pumping on the vacuum-pumping drying box by a vacuum pump until a vacuum meter shows (-0.01)-(-0.1)MPa, closing a valve of the drying box, closing the vacuum pump, adjusting the temperature of the vacuum-pumping drying box to be 50-60 DEG C, setting drying time to be 40-60 hours, turning off a power supply after completing a drying task, opening the valve so that the drying box is restored to be normal atmosphere, opening the drying box, taking out of the drying tube, and rapidly assembling the drying tube.
Description
Technical field
The invention belongs to semiconductor laser apparatus to humidity environment adaptability studying technological domain, relate to a kind of semiconductor laser drying tube recycling method.
Background technology
Semiconductor laser to be worked material and lasing device with certain semi-conducting material.Conventional operation material has GaAs (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulphide (ZnS) etc.The operation principle of semiconductor laser is by certain energisation mode, can be with between (conduction band and valence band) at semiconductor substance, or semiconductor substance can be with between impurity (acceptor or alms giver) energy level, realize the population inversion of non equilibrium carrier, when being in a large amount of electronics and the hole-recombination of population inversion state, just produce stimulated emission effect.The energisation mode of semiconductor laser mainly contains three kinds, i.e. electrical pumping formula, optical pumping formula and high-power electron beam Exciting-simulator system.
According to the band theory of solid, in semi-conducting material, the energy level of electronics is formed and can be with.High-octane is conduction band, and low-energy is valence band, and two bands are separated by forbidden band.Introduce the nonequilibrium electron-hole of semiconductor to compound tense, the energy of release is radiate with light emitting species, the recombination luminescence of Here it is charge carrier.Semi-conducting material generally used has two large classes, direct band gap material and indirect bandgap material, the radiative transistion probability that wherein direct gap semiconductor material is as more much higher in Si has than indirect bandgap material in GaAs (GaAs), luminous efficiency is also much higher.
The necessary condition that semiconductors coupling luminescence reaches stimulated emission (namely producing laser) is:
(1) gain condition, sets up the reversion distribution swashing and penetrate medium (active area) carriers.Represent in the semiconductors electron energy by a series of form close to continuous print energy level can be with, therefore population inversion will be realized in the semiconductors, must between two energy regions, the electron number be at the bottom of upper state conduction band is more much larger than the hole number being in lower state top of valence band, this is by adding forward bias to homojunction or heterojunction, the charge carrier noting people's necessity in active layer realizes, by electronics from the lower valence of energy to the higher conduction band of energy.When being in a large amount of electronics and the hole-recombination of population inversion state, just produce stimulated emission effect.
(2) want actual and obtain relevant stimulated radiation, stimulated radiation must be made repeatedly to be fed back in optical resonator and form laser generation, the resonant cavity of laser is formed as speculum by the natural cleavage plane of semiconductor crystal, usually plate high anti-multilayer dielectric film in that one end of not bright dipping, and exiting surface plates antireflective film.What can utilize crystal easily to F-P cavity (Fabry-Perot-type cavity) semiconductor laser forms F-P cavity with the natural cleavage plane of P-N junction plane being perpendicular.
(3) in order to form stable oscillation stationary vibration, laser medium must can provide enough large gain, to make up the light loss that resonant cavity causes and the loss caused from the Laser output etc. in face, chamber, constantly increases the light field in chamber.This just must have enough strong pulse current injectingt, namely has enough population inversion, and population inversion degree is higher, and the gain obtained is larger, and namely requirement must meet certain current threshold condition.When laser reaches threshold values, the light with specific wavelength just also can be exaggerated at chamber interior resonance, finally forms laser and exports continuously.Visible in semiconductor laser, the dipole transition in electronics and hole is that basic light is launched and light amplification process, for Semiconductor Laser, people generally acknowledge that quantum well is the fundamental driving force of semiconductor laser development at present, and semiconductor laser is a kind of high efficiency electron-photon switching device.
Semiconductor laser operation principle is energisation mode, utilize semiconductor substance (namely utilizing electronics) luminous in energy band-to-band transition, two parallel reflective mirrors are formed as speculum by the cleavage surface of semiconductor crystal, composition resonant cavity, make light generation, feedback, the radiation producing light is amplified, Output of laser.Semiconductor laser advantage: volume is little, lightweight, running is reliable, little power consumption, efficiency are high.Due to these advantages, semiconductor diode laser is in laser communication, optical storage, optical circulator, laser printing, range finding and radar etc. and obtain a wide range of applications.
Because semiconductor laser is direct electron-photon transducer, inside modules is integrated with a large amount of electronic devices and components, and when semiconductor laser is operated in the larger environment of humidity, steam around can produce considerable influence to electronic device or circuit performance.Learning by consulting related data, under room temperature, when relative humidity is below 40%, thinking air oxygen detrition.When relative humidity higher than 80% time, think that air is moist.When relative humidity is greater than 65%, body surface will adhere to the moisture film that thick layer is 0.001 ~ 0.01 μm, and this moisture film be cannot see, be can not touch.When air is in saturation condition, moisture film can thicken 10 μm.
Higher steam noise spectra of semiconductor lasers mainly contains the impact of two aspects:
(1) stability of electrical property is endangered
Along with the development of semiconductor integrated technique, device integrated on wafer gets more and more, spacing in device between metallic conductor is also just more and more less, and the existence of steam just drastically influence the conductance of insulator surface between conductor, when devices function ambient temperature is lower, steam easily condenses at device or circuit surface, thus the leakage current of product is increased, parameter is deteriorated, or even is short-circuited, and causes product failure.
(2) reliability of product is reduced
The connection of semiconductor device and outer lead realizes interconnecting by the mode of micron-sized gold thread or aluminum wire bonding, and after steam enters sealing, aluminium is subject to its corrosion and causes fracture, can cause open circuit like this, causes properties of product to reduce or lost efficacy; When there is pollutant in device, enter sealing steam can with its generation chemical reaction, formed electrolyte, larger corrosion can be caused to device or circuit.According to the research of Bell Co. to semiconductor device reliability, the life-span of humidity to device has a significant effect, and humidity is larger, and device lifetime is shorter.And for semiconductor laser, when the operational environment of semiconductor laser is in more than 60%, semiconductor laser is malfunctioning.
In order to make semiconductor laser normally work and effectively maintain laser, laser machine installs drying tube, and the drying tube that frequent replacing had been lost efficacy, be that semiconductor laser can normally work.But the cost of drying tube is very high, so one can enable drying tube recycle, not only environmental protection but also the method reducing cost were very necessary.
Summary of the invention
The present invention is directed to the above-mentioned semiconductor laser manufacture that utilizes the effective operation of high cost drying tube is studied, be devoted to reduce the economic input using semiconductor laser enterprise.
The technical solution adopted in the present invention is that a kind of utilization vacuumizes drying box and make semiconductor laser drying tube recycling method.Technical scheme feature relates generally to following content: the thing in drying box is cleaned out by (1), drying tube is split, vacuumize on the drying frame 6 of drying box by interspersing among containing xeraphium part 1 and 2 points, drying tube overcoat, drying tube should not be placed on drying box inner drying for the rubber ring 3 sealed due to easy temperature influence distortion, shuts and vacuumizes drying box; (2) open the valve 1 vacuumizing drying box and be connected with vacuum pump, be evacuated to relative vacuum table 2 and be shown as-0.01MPa ~-0.1MPa, first valve-off 1, then close vacuum pump; (3) regulate the baking temperature adjusting knob 4 vacuumizing drying box to be set to 50 DEG C ~ 60 DEG C, regulate the drying time vacuumizing drying box that knob 5 is set and be set to 40h ~ 60h, start dry; (4) vacuumize after drying box completes dry task, powered-down, first opens valve 1, makes vacuum degree in drying box return to normal atmosphere (An), then opens drying box, takes out drying tube, assembles drying tube rapidly.
Accompanying drawing explanation
Fig. 1 is that the present invention vacuumizes drying box operation chart;
Fig. 2 is drying tube building block schematic diagram of the present invention;
Fig. 3 is the schematic diagram that lost efficacy after drying tube of the present invention uses;
Fig. 4 is the good schematic diagram of drying tube drying regime of the present invention;
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Example one:
(1) thing in drying box is cleaned out, drying tube is split, vacuumize on the drying frame 6 of drying box by interspersing among containing xeraphium part 1 and 2 points, drying tube overcoat, drying tube should not be placed on drying box inner drying for the rubber ring 3 sealed due to easy temperature influence distortion, shuts and vacuumizes drying box;
(2) open the valve 1 vacuumizing drying box and be connected with vacuum pump, be evacuated to relative vacuum table 2 and be shown as-0.02MPa, first valve-off 1, then close vacuum pump;
(3) regulate the baking temperature adjusting knob 4 vacuumizing drying box to be set to 50 DEG C, regulate the drying time vacuumizing drying box that knob 5 is set and be set to 60h, start dry;
(4) vacuumize after drying box completes the dry task of 60h, powered-down, first opens valve 1, makes vacuum degree in drying box return to standard atmospheric pressure, then opens drying box, takes out drying tube, assembles drying tube rapidly.
Example two:
(1) thing in drying box is cleaned out, drying tube is split, vacuumize on the drying frame 6 of drying box by interspersing among containing xeraphium part 1 and 2 points, drying tube overcoat, drying tube should not be placed on drying box inner drying for the rubber ring 3 sealed due to easy temperature influence distortion, shuts and vacuumizes drying box;
(2) open the valve 1 vacuumizing drying box and be connected with vacuum pump, be evacuated to relative vacuum table 2 and be shown as-0.1MPa, first valve-off 1, then close vacuum pump;
(3) regulate the baking temperature adjusting knob 4 vacuumizing drying box to be set to 55 DEG C, regulate the drying time vacuumizing drying box that knob 5 is set and be set to 48h, start dry;
(4) vacuumize after drying box completes the dry task of 48h, powered-down, first opens valve 1, makes vacuum degree in drying box return to standard atmospheric pressure, then opens drying box, takes out drying tube, assembles drying tube rapidly.
Claims (2)
1. a semiconductor laser drying tube recycling method, it is characterized in that: utilize and vacuumize drying box, first carry out being evacuated to adjustment and vacuumize-0.1MPa, arranging drying box temperature is 55 DEG C, drying time is set to 48h, assembles drying tube in time after completing drying.
2. first the thing in drying box is cleaned out by described in claim 1, drying tube is split, to divide to intersperse among containing xeraphium part and drying tube overcoat vacuumizes in drying box, utilize vacuum pump drying box to be evacuated to relative vacuum table and be shown as-0.1MPa, first close drying box valve, close vacuum pump again, adjustment vacuumizes drying box temperature 55 DEG C and time 48h, after completing dry task, powered-down, first opens valve and makes drying box return to normal atmosphere (An), then open drying box, take out drying tube, assemble drying tube rapidly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510915810.4A CN105406349A (en) | 2015-12-10 | 2015-12-10 | Recycle method of semiconductor laser drying tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510915810.4A CN105406349A (en) | 2015-12-10 | 2015-12-10 | Recycle method of semiconductor laser drying tube |
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| CN105406349A true CN105406349A (en) | 2016-03-16 |
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| CN201510915810.4A Pending CN105406349A (en) | 2015-12-10 | 2015-12-10 | Recycle method of semiconductor laser drying tube |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102147185A (en) * | 2010-12-10 | 2011-08-10 | 奇瑞汽车股份有限公司 | Drying method of pole pieces of lithium-ion secondary battery |
| CN102997618A (en) * | 2012-12-17 | 2013-03-27 | 四川省晶源电气设备制造有限公司 | Drying process for preventing dried iron core from rusting |
| CN103322776A (en) * | 2013-06-05 | 2013-09-25 | 奇瑞汽车股份有限公司 | Drying method of lithium ion battery pole pieces |
| CN103344097A (en) * | 2013-06-03 | 2013-10-09 | 奇瑞汽车股份有限公司 | Lithium ion battery cell drying method and lithium ion battery |
| CN104764302A (en) * | 2014-01-02 | 2015-07-08 | 台湾神户电池股份有限公司 | Drying equipment of accumulator pole plate and method thereof |
| CN105021024A (en) * | 2015-07-28 | 2015-11-04 | 深圳市贝特瑞新能源材料股份有限公司 | Microporous container used for deeply drying lithium ion battery powder materials and deep drying method |
-
2015
- 2015-12-10 CN CN201510915810.4A patent/CN105406349A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102147185A (en) * | 2010-12-10 | 2011-08-10 | 奇瑞汽车股份有限公司 | Drying method of pole pieces of lithium-ion secondary battery |
| CN102997618A (en) * | 2012-12-17 | 2013-03-27 | 四川省晶源电气设备制造有限公司 | Drying process for preventing dried iron core from rusting |
| CN103344097A (en) * | 2013-06-03 | 2013-10-09 | 奇瑞汽车股份有限公司 | Lithium ion battery cell drying method and lithium ion battery |
| CN103322776A (en) * | 2013-06-05 | 2013-09-25 | 奇瑞汽车股份有限公司 | Drying method of lithium ion battery pole pieces |
| CN104764302A (en) * | 2014-01-02 | 2015-07-08 | 台湾神户电池股份有限公司 | Drying equipment of accumulator pole plate and method thereof |
| CN105021024A (en) * | 2015-07-28 | 2015-11-04 | 深圳市贝特瑞新能源材料股份有限公司 | Microporous container used for deeply drying lithium ion battery powder materials and deep drying method |
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