CN105405967B - A kind of information memory cell and read-only storage - Google Patents
A kind of information memory cell and read-only storage Download PDFInfo
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- CN105405967B CN105405967B CN201510971655.8A CN201510971655A CN105405967B CN 105405967 B CN105405967 B CN 105405967B CN 201510971655 A CN201510971655 A CN 201510971655A CN 105405967 B CN105405967 B CN 105405967B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
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Abstract
The invention discloses a kind of information memory cell and read-only storage, the information memory cell includes beveling single crystalline substrate and ferromagnetic thin film；The beveling single crystalline substrate includes first crystal axle；The ferromagnetic thin film has multiple magnetic domains.Wherein, the normal of the contact surface of the beveling single crystalline substrate and the ferromagnetic thin film is the beveling offset direction of the beveling single crystalline substrate relative to the offset direction of the first crystal axle, and the direction is preset direction；The information memory cell controls the arrangement of neticdomain wall using the beveling offset direction of the single crystalline substrate.Based on above- mentioned information memory cell, the invention also discloses a kind of structure of read-only storage.Described information memory cell and read-only storage solve the problem of existing stage memory is damaged storage information by magnetic interference.
Description
Technical field
The present invention relates to technical field of information storage, more specifically to a kind of information memory cell and read-only deposit
Reservoir.
Background technology
The various electronic equipments with store function are widely used the daily of people with the development of science and technology
Life and work among, be daily life and work bring huge facility, as people's daily life with
The indispensable important tool of work.
General, read-only storage is a kind of conventional unit for realizing electronic equipment store function.Read-only storage one
As be loaded into before complete machine in advance finish writing be served only in data storage, whole working read data storage.Read-only storage institute
Deposit data is stable, and stored data will not also change after power-off；Its structure is simpler, and reading is more convenient, thus it is each to be usually used in storage
Plant fixed routine and data storage.
Traditional read-only storage damages storage information easily by magnetic interference, is unfavorable for being used for a long time.Therefore, how
There is provided it is a kind of is not easily susceptible to the read-only storage that magnetic interference damages storage information, be that one urgently in technical field of information storage
The problem of solution.
The content of the invention
To solve the above problems, the invention provides a kind of information memory cell and read-only storage, solving existing rank
The problem of segment memory is damaged storage information by magnetic interference.Above- mentioned information memory cell and read-only storage, its core feature
It is the ferromagnetic thin film for including chamferring single crystalline substrate and being grown in the beveling single crystalline substrate.Described information memory cell is not
It is same as being to control the row of the neticdomain wall in ferromagnetic thin film using the beveling direction of single crystalline substrate is chamfer in place of prior art
Row, above-mentioned magnetic domain arrangement can be influenceed and energy stable alignment by substrate miscut, it should with Exchange interaction energy, magnetocrystalline anisotropy
Synergy between energy and magnetic dipolar interaction energy is relevant.Its specific mechanism is selected beveling single crystalline substrate by answering
Change, which is acted on, causes the ferromagnetic thin film to have magnetic anisotropy outside face, but its easy axis deviates the ferromagnetic thin film
Normal to a surface direction and offset direction are identical with the offset direction of the beveling single crystalline substrate beveling, at the same easy magnetizing axis with
The angle of the ferromagnetic thin film normal is equal to the mis-cut angle of the beveling single crystalline substrate.The influence acted in magnetic dipole
Under, the magnetic momente interaction arranged along easy magnetizing axis offset direction can be lower, so that neticdomain wall is easier along easy magnetizing axis
Offset direction arrangement.In the case where external magnetic field is relatively strong, although the orientation of neticdomain wall can be disturbed.But magnetic except going
After, due to the influence of the free energy principle of the minimum, neticdomain wall arrangement can return to original state.Information of the present invention is deposited
Storage unit and read-only storage are the different ordered states using above-mentioned neticdomain wall to represent different information.Because the present invention is
The regulation and control to the neticdomain wall orientation, and the magnetic except going are realized using the beveling direction of the beveling single crystalline substrate
Or without external magnetic field under the influence of, the arrangement of the neticdomain wall can return to or be maintained at what is chamfer along the beveling single crystalline substrate
On offset direction, therefore information memory cell of the present invention and read-only storage have the ability of anti-magnetic interference.
To achieve these goals, the present invention provides following technical scheme：
A kind of information memory cell, for read-only storage, it is thin that the read-only storage includes ferromagnetism successively from top to bottom
Film, beveling single crystalline substrate；
Wherein, the lattice constant of the beveling single crystalline substrate is less than the lattice constant of the ferromagnetic thin film；It is described ferromagnetic
Property film can be in described miscut substrate Epitaxial growth；The ferromagnetic thin film and the contact surface of the beveling single crystalline substrate
Normal and the first crystal axle of the beveling single crystalline substrate are in predetermined angle, and the predetermined angle is the beveling single crystalline substrate
Mis-cut angle；The normal of contact surface is relative to the first crystal axle between the ferromagnetic thin film and the beveling single crystalline substrate
Offset direction is preset direction, and the offset direction is the beveling offset direction of the beveling single crystalline substrate；The ferromagnetism is thin
Film is made up of multiple magnetic domains, and its easy axis parallel to described by substrate strain controlling because being chamfer the first of single crystalline substrate
Crystal direction of principal axis；The domain wall of multiple magnetic domains of the ferromagnetic thin film is with the less parallel of teleblem face intersection so as on teleblem face
Form approximately parallel neticdomain wall pattern；Under the influence of without external magnetic field, the orientation of above-mentioned intersection or above-mentioned neticdomain wall is put down
Row is in the offset direction of the beveling single crystalline substrate beveling；When the neticdomain wall orientation is different, described information storage is single
The storage state that member is used to represent is different；The neticdomain wall arrangement pattern of the ferromagnetic thin film can be chamfer with single crystalline substrate to be offset
Direction is modulated into the neticdomain wall pattern of any orientation.
It is preferred that, in above- mentioned information memory cell, the neticdomain wall arrangement pattern of the ferromagnetic thin film can be with described
The beveling offset direction of beveling single crystalline substrate is modulated into the neticdomain wall pattern of any orientation.
It is preferred that, in above- mentioned information memory cell, the coercivity of the ferromagnetic thin film is at least below 100 oersteds.
It is preferred that, in above- mentioned information memory cell, the beveling single crystalline substrate is the monocrystalline lining with cubic symmetry
Bottom；The lattice structure of the ferromagnetic thin film grown in the beveling single crystalline substrate has cubic lattice structure or counterfeit cubic lattice
Structure, and the lattice constant of the ferromagnetic thin film is less than the lattice constant for chamferring single crystalline substrate.
It is preferred that, in above- mentioned information memory cell, the beveling single crystalline substrate is beveling (001) monocrystal；Wherein,
(001) crystal axis is the first crystal axle for chamferring single crystalline substrate；It is described beveling single crystalline substrate (001) crystal axis with it is described
The angle chamfer between the surface normal of single crystalline substrate is mis-cut angle, and mis-cut angle is predetermined angle；The beveling single crystalline substrate
(001) crystal axis relative to it is described beveling single crystalline substrate surface normal offset direction for beveling offset direction, beveling skew
Direction is preset direction；The neticdomain wall arrangement pattern of the ferromagnetic thin film can be with the oblique of described beveling (001) single crystalline substrate
Cut the neticdomain wall pattern that offset direction is modulated into any orientation.
It is preferred that, in above- mentioned information memory cell, the domain wall arrangement pattern of the ferromagnetic thin film can be with described oblique
Singulation crystalline substance substrate miscut offset direction changes over two kinds of orthogonal domain wall patterns；When the beveling of the beveling single crystalline substrate is inclined
When shifting direction is approximately parallel to (010) crystal direction of principal axis of the beveling single crystalline substrate, the neticdomain wall in the ferromagnetic thin film
Orientation be also approximately parallel to (010) crystal direction of principal axis of the beveling single crystalline substrate, described information memory cell is deposited
Storage state representation is the first storage state；When the beveling single crystalline substrate beveling offset direction is approximately parallel to the beveling monocrystalline
During (100) crystal direction of principal axis of substrate, the orientation of the neticdomain wall is also approximately parallel to the beveling single crystalline substrate
(100) crystal direction of principal axis, the storage state of described information memory cell is expressed as the second storage state；Wherein, described first deposit
Storage state is vertical with the neticdomain wall orientation corresponding to the second storage state.
It is preferred that, in above- mentioned information memory cell, described beveling (001) single crystalline substrate is beveling (001) LaAlO3It is single
Crystal, its (001) crystal axis is LaAlO3The first crystal axle of monocrystal；Described beveling (001) LaAlO3The angle of chamfer of monocrystal
Degree or described beveling (001) LaAlO3(001) crystal axis of crystal and the LaAlO3The angle of the normal direction of single-crystal surface is pre-
If angle；Described beveling (001) LaAlO3The surface of monocrystal is optical polishing surface.
It is preferred that, in above- mentioned information memory cell, (001) LaAlO3The mis-cut angle of crystal or the beveling
(001)LaAlO3(001) crystal axis of crystal and the LaAlO3The angle of the normal direction of single-crystal surface is predetermined angle, and this is pre-
If angle is 5 °~15 °.
It is preferred that, in above- mentioned information memory cell, the ferromagnetic thin film is manganese-salt phosphating, the Mn oxide
Thin film composition is R(1-x)MxMnO3, wherein R is La, Nd, at least one of Sm or Pr elements, during M is Ba, Sr or Ca elements
At least one, wherein 0.1≤x≤0.6.
It is preferred that, in above- mentioned information memory cell, the manganese-salt phosphating composition is La(1-x)SrxMnO3, wherein
0.3≤x≤0.6 or La(1-x)BaxMnO3, wherein 0.2≤x≤0.3.
The present invention also provides a kind of read-only storage, and the read-only storage includes：Multiple information memory cells, firm banking
And for reading the information read device of described information memory cell storage state；Described information memory cell is above-mentioned implementation
Information memory cell described in any one of mode；The multiple information memory cell is fixed on same firm banking surface.
It is preferred that, in above-mentioned read-only storage, described information reading device is giant magnetoresistance effect or tunnel magneto resistance
The magnetic transducing probe or magnetic force microscopy magnetic transducing probe of effect.
A kind of method to set up of storage state in above-mentioned read-only storage is provided, steps of the method are：First in selection
State the information memory cell for needing to rewrite in read-only storage；Then, change and single crystalline substrate is chamfer in the information memory cell
The monocrystalline of beveling offset direction or the different beveling offset directions of selection makees substrate；Subsequently, growth ferromagnetism is thin over the substrate
Neticdomain wall orientation in film, the ferromagnetic thin film of gained is controlled by the beveling offset direction of the beveling single crystalline substrate；Most
Afterwards, the neticdomain wall arranged using this different directions represents different storage states.It is preferred that, it is respectively adopted two kinds and is mutually perpendicular to
Neticdomain wall arrangement pattern represent logic state " 0 " and " 1 ".Wherein, the beveling single crystalline substrate and ferromagnetic thin film are above-mentioned
Beveling single crystalline substrate and ferromagnetic thin film described in any one of embodiment.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
A kind of structural representation for information memory cell that Fig. 1 provides for the embodiment of the present application；
Fig. 2 is the structure top view of ferromagnetic thin film in Fig. 1；
The structural representation for another information memory cell that Fig. 3 provides for the embodiment of the present application；
Fig. 4 is the structure top view of ferromagnetic thin film in Fig. 3；
A kind of schematic diagram for reading information memory cell magnetic domain arrangement that Fig. 5 provides for the application；
A kind of structural representation for read-only storage that Fig. 6 provides for the embodiment of the present application；
A kind of beveling (001) LaAlO that Fig. 7 provides for the embodiment of the present application3Grown in single crystalline substrate
La0.67Sr0.33MnO3The magnetic domain figure of film, wherein, (a) is LSMO/LAO-5X Surface Ls a0.67Sr0.33MnO3The magnetic domain of film
Figure, (b) is the magnetic domain figure that LSMO/LAO-5X surfaces are measured after 1T magnetic fields are handled, and (c) is that LSMO/LAO-5X information is deposited
Storage unit is in the magnetic domain figure without the LSMO/LAO-5X surfaces after being placed 15 days under magnetic field environment；
Another beveling (001) LaAlO that Fig. 8 provides for the embodiment of the present application3Grown in single crystalline substrate
La0.67Sr0.33MnO3The magnetic domain figure of film, wherein, (a) is the magnetic domain figure on LSMO/LAO-5Y surfaces, and (b) is by 1T magnetic fields
The magnetic domain figure on the LSMO/LAO-5Y surfaces after reason, (c) is the magnetic on the LSMO/LAO-5Y surfaces after the placement of about 15 days
Farmland figure.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
As described in the background art, traditional read-only storage damages storage information, is unfavorable for easily by magnetic interference
It is used for a long time.Therefore, how a kind of read-only storage for being not easily susceptible to magnetic interference damage storage information is provided, is information storage
A urgent problem to be solved in technical field.In order to solve the problem, the embodiment of the present application provides a kind of information and stores single
Member and read-only storage, can be damaged storage information by magnetic interference with the significantly more efficient existing stage memory of solution and be asked
Topic.
With reference to Fig. 1, a kind of information memory cell structural representation that Fig. 1 provides for the embodiment of the present application.The information is stored
Unit, for read-only storage, includes ferromagnetic thin film 11 and single crystalline substrate 12 successively from top to bottom；Wherein, the beveling is single
The lattice constant of brilliant substrate 12 is less than the lattice constant of the ferromagnetic thin film 11；The ferromagnetic thin film 11 can be described oblique
Cut the Epitaxial growth of single crystalline substrate 12.In the information memory cell shown in Fig. 1, the beveling single crystalline substrate 12 is preferably to chamfer
Cube monocrystal, is chosen as chamferring cube (001) LaAlO3Monocrystal, wherein (001) crystal axis is the LaAlO3The monocrystal
First crystal axle；Described beveling (001) LaAlO3Single crystalline substrate 12 can as a variety of ferromagnetic oxide films substrate；It is described
Chamfer (001) LaAlO3The surface of single crystalline substrate 12 is optical polishing surface, and its surface average roughness is less than 4 angstroms, to ensure
Ferromagnetic oxide film can the high-quality epitaxial growth in the single crystalline substrate.It is LaAlO in the single crystalline substrate 123Crystal
On the premise of, the composition of the ferromagnetic thin film 11 is R(1-x)MxMnO3(0.1≤x≤0.6), wherein, R is La, Nd, Sm or Pr
At least one of element, M is at least one of Ba, Sr or Ca elements, and the manganese-salt phosphating described in these can be in beveling
LaAlO3The Epitaxial growth of single crystalline substrate 12, and the Mn oxide cube or counterfeit cubic lattice constant be less than LaAlO3It is single
Brilliant lattice constant；Preferably La(1-x)SrxMnO3, wherein 0.3≤x≤0.6, or La(1-x)BaxMnO3, wherein 0.2≤x≤
0.3, these preferred components have ferromagnetism at room temperature.
Z axis in Fig. 1 Cartesian coordinates represents described beveling (001) LaAlO3The normal to a surface side of single crystalline substrate 12
To.In the information memory cell shown in Fig. 1, the ferromagnetism manganese oxide film 11 and beveling (001) LaAlO3Single crystalline substrate
The normal of 12 contact surface is beveling (001) LaAlO3The normal (i.e. above-mentioned Z-direction) of single crystalline substrate surface burnishing surface, institute
State normal and described beveling (001) LaAlO3The first crystal axle of single crystalline substrate 12 is that the angle of (001) crystal between centers is institute
State beveling (001) LaAlO3The mis-cut angle of single crystalline substrate 12, the mis-cut angle is predetermined angle；Described beveling (001) LaAlO3
(001) crystal axis of single crystalline substrate 12 is relative to described beveling (001) LaAlO3The offset direction of the surface normal of single crystalline substrate 12
As described beveling (001) LaAlO3The beveling offset direction (or skew is pointed to) of single crystalline substrate 12, the offset direction is default
Direction.(001) LaAlO is chamfer with reference to described in Fig. 13(001) crystal axis of single crystalline substrate 12 deviates Z axis, and flute card is pointed in skew
The X-direction of youngster's coordinate system, in other words described beveling (001) LaAlO3The beveling offset direction of single crystalline substrate is sat for the cartesian
The X-direction of mark system (is approximately parallel to the LaAlO3(100) crystal direction of principal axis of monocrystalline).Therefore, the beveling (001)
LaAlO3(001) crystal axis and (100) crystal axis of single crystalline substrate 12 are flat at one with the X of the Cartesian coordinates, Z axis
Face, the Y-axis of Cartesian coordinates then with described beveling (001) LaAlO3(010) crystal overlapping of axles of single crystalline substrate 12.The iron
Magnetic manganese-salt phosphating 11 is made up of multiple magnetic domains, and its easy axis is because by beveling (001) LaAlO3Single crystalline substrate 12
Biaxial Compressive strain controlling and parallel to (001) crystal direction of principal axis of the single crystalline substrate 12；The ferromagnetism Mn oxide is thin
The domain wall of multiple magnetic domains of film 11 is with the less parallel of teleblem face intersection so as to form approximately parallel neticdomain wall on teleblem face
Pattern；Under the influence of without external magnetic field, the arrangement of magnetic moment in above-mentioned ferromagnetism manganese-salt phosphating it is main by Exchange interaction energy,
The influence of magnetocrystalline anisotropy energy and magnetic dipolar interaction energy, wherein the orientation of neticdomain wall is parallel to the beveling
(001)LaAlO3The beveling offset direction of single crystalline substrate, i.e., the X-direction shown in Fig. 1.
Fig. 2 is the top view of ferromagnetic thin film in figure 1 above, and Fig. 2 shows that neticdomain wall arrangement is (right along the horizontal direction on paper
Answer X-direction).The different magnetic domain of black and white Regional Representative in Fig. 1, Fig. 2, the intersection of magnetic domain is neticdomain wall.
It should be noted that information memory cell shown in Fig. 1, Fig. 2 is in the first described storage state.
With reference to the structural representation of Fig. 3 another information memory cells provided for the embodiment of the present application.It is with above-mentioned
A kind of difference of information memory cell is described beveling (001) LaAlO3Point to the flute in the beveling offset direction of single crystalline substrate 12
The Y direction of card youngster's coordinate system (is approximately parallel to (001) LaAlO3(010) crystal direction of principal axis of single crystalline substrate), therefore institute
State beveling (001) LaAlO3(100) crystal of single crystalline substrate 12 is overlapped with the X-axis of Cartesian coordinates, the beveling (001)
LaAlO3(001) crystal axis and (010) crystal axis of single crystalline substrate 12 Y then with Cartesian coordinates, Z axis in a plane,
The Z axis of Cartesian coordinates is still beveling (001) LaAlO3The surface normal direction of single crystalline substrate 12.Because magnetic moment arrangement is by magnetic
The influence of exchange energy, magnetocrystalline anisotropy energy and magnetic dipolar interaction energy, the neticdomain wall orientation shown in Fig. 3 is put down
Row is in above-mentioned beveling (001) LaAlO3The beveling offset direction of single crystalline substrate is the Y direction in the Cartesian coordinates.
Fig. 4 is the top view of ferromagnetic thin film in Fig. 3, and Fig. 4 shows neticdomain wall arrangement along the longitudinal direction (correspondence on paper
Y direction).Information memory cell shown in Fig. 3, Fig. 4 is in the second described storage state.Black and white in Fig. 3, Fig. 4
The different magnetic domain of Regional Representative, the intersection of magnetic domain is neticdomain wall.
The embodiment of the present application utilizes this beveling (001) LaAlO3The magnetic domain of the beveling offset direction control of single crystalline substrate 12
Wall ordered state records logical message, for example, represented using above-mentioned first storage state (corresponding neticdomain wall is transversely arranged)
Logic state " 0 ", it is " 1 " to represent logic state using above-mentioned second storage state (corresponding neticdomain wall longitudinal arrangement), can
To realize the information storage function of information memory cell.It is mutually perpendicular that certain above-mentioned neticdomain wall pattern is not limited to above two
State, multi-mode letter can be realized by being arranged for example with the neticdomain wall that 30 degree, 60 degree, 90 degree etc. are arranged in initial neticdomain wall
Breath storage, the orientation of the neticdomain wall is by selecting the single crystalline substrate of specific beveling offset direction to realize.
In the information memory cell, the influence arranged for reduction defect pinning magnetic moment, the ferromagnetism manganese film 11
Coercivity should be sufficiently small, with the main strained control of the direction of easy axis for ensureing the ferromagnetic thin film 11 parallel to described
Chamfer the first crystal direction of principal axis of single crystalline substrate.It is preferred that, the coercivity of above-mentioned ferromagnetic thin film 11 it is difficult to understand at least below 100 this
Spy, such as in beveling (001) LaAlO3The La of single crystalline substrate Epitaxial growth(1-x)SrxMnO3Film, its coercivity is about 25
Between~100Oe (0.3≤x≤0.6 herein), the now La(1-x)SrxMnO3The direction of easy axis of film is parallel to beveling
(001)LaAlO3(001) crystal direction of principal axis of single crystalline substrate.In the case where being influenceed without external magnetic field, above-mentioned ferromagnetism manganese oxidation
The arrangement of magnetic moment can mainly be determined by Exchange interaction energy, magnetocrystalline anisotropy energy and magnetic dipolar interaction in thing film
Fixed, the orientation of its neticdomain wall is parallel to beveling (001) LaAlO3The beveling offset direction of single crystalline substrate.
In the information memory cell, described beveling (001) LaAlO3The surface normal of single crystalline substrate 12 is served as a contrast with the monocrystalline
The first crystal axle at bottom is that the default angle of (001) crystal axis can not be excessive, can be described ferromagnetic with utility prior art
Property the surface of manganese-salt phosphating 11 on observe clearly magnetic domain, if the predetermined angle is excessive and during close to 90 °, in film
Magnetic moment will be lain in the surface of ferromagnetic thin film 11, will so cause magnetic domain to be contrasted under the display of magnetic force microscopy not clear
It is aobvious, it is unfavorable for observation；In addition, the predetermined angle can not be too small, to ensure the neticdomain wall arrangement along single crystalline substrate 12
When chamferring offset direction arrangement, the total magnetic interaction of system can be minimum, if the predetermined angle is close to 0 °, in same magnetic
Magnetic dipolar interaction energy and total magnetic interaction inside farmland between neighboring magnetic moments will have rotational symmetry, so that
The arrangement of magnetic domain and neticdomain wall in the surface of ferromagnetic thin film 11 is obtained without specific preferred orientations.Store single in above- mentioned information
In member, the surface normal of described beveling (001) LaAlO3 single crystalline substrates 12 and presetting for (001) crystal between centers of the single crystalline substrate
Angle is preferably 5 ° -15 °.
It should be strongly noted that the important characteristic that the information memory cell that the present invention is provided has is exactly to record
Information be resistant to magnetic interference, information and can restore.By taking the embodiment shown in Fig. 1-Fig. 4 as an example, when external magnetic field is more than ferromagnetism manganese
During the coercivity of sull 11, the arrangement of the neticdomain wall of the ferromagnetic thin film 11 will be disturbed.After external magnetic field is removed,
Because the influence of free energy minimal principle is (mainly by Exchange interaction energy, magnetocrystalline anisotropy energy and magnetic dipole phase interaction
With can determine), the magnetic moment arrangement in ferromagnetic thin film 11 returns to spontaneous relaxation initial stable state, and wherein neticdomain wall is arranged
Returned to spontaneous along the direction that the original beveling along beveling single crystalline substrate 12 is offset.The information storage of technical scheme is single
Member records logical message using the neticdomain wall ordered state of this beveling offset direction control by beveling single crystalline substrate 12, because
This its there is the ability that anti-magnetic interference, information state (corresponding neticdomain wall ordered state) can restore, and can solve to pass
The problem of data of memory cell are easily damaged by external magnetic field in system read-only storage.
In above-mentioned information memory cell, the ordered state of neticdomain wall can use giant magnetoresistance effect or tunnel magneto resistance
The magnetic transducing probe of effect or the magnetic transducing probe of magnetic force microscopy are read, for example, hung down mutually with two kinds when in neticdomain wall
During straight state, signal of the magnetic transducing probe measured by different scanning scanning direction can be differed, and thus be judged
The orientation of neticdomain wall is along the parallel direction with paper or vertical direction with paper and determines that its is corresponding according to this
Logic state.
A kind of reading manner schematic diagram for information storage unit storage state that Fig. 5 provides for the embodiment of the present application.In Fig. 5
Information read device 52 include magnetic transducing probe 51 and terminal 53.The magnetic transducing probe 51 preferably uses huge magnetoelectricity
The magnetic transducing probe of inhibition effect or tunneling magnetoresistance or the magnetic transducing probe of magnetic force microscopy；The terminal 53 is used for
Analyze the unlike signal and and then determination logic state, display storage letter measured by the magnetic force microscopy magnetic transducing probe 51
Breath.
Based on above-described embodiment, the embodiment of the present application additionally provides a kind of read-only storage, the knot of the read-only storage
Structure is as shown in Figure 6.The read-only storage includes multiple information memory cells 61, a firm banking 60, and for reading
The information read device 52 of information memory cell storage state；The multiple information memory cell 61 is fixed on same firm banking
60 surface；The described material of firm banking 60 can select the smooth sheet metal or insulating materials in surface, pass through the methods such as bonding
It is fixed.The storage state of described read-only storage can be read by information read device 52；Described information read device 52
Including magnetic transducing probe 51 and terminal 53.
The read-only storage enters row information storage, the spy with strong antijamming capability using above- mentioned information memory cell
Point, data storage will not be damaged by external magnetic field.
A kind of method to set up of storage state in above-mentioned read-only storage is provided, steps of the method are：First in selection
The information memory cell for needing to rewrite in read-only storage is stated, for example, selects information memory cell 61 as shown in Figure 6；So
Afterwards, the list of the beveling offset direction that single crystalline substrate is chamfer in the information memory cell 61 or the different beveling offset directions of selection is changed
Crystalline substance makees substrate, for example, select beveling single crystalline substrate or selection beveling single crystalline substrate as shown in Figure 3 as shown in Figure 1；Subsequently,
The neticdomain wall orientation in ferromagnetic thin film, the ferromagnetic thin film of gained is grown over the substrate by the beveling single crystalline substrate
Beveling offset direction control, for example：In beveling (001) LaAlO as shown in Figure 13The ferromagnetism manganese grown in single crystalline substrate
Sull, its thin film magnetic domains structure is transversely arranged as shown in Figure 2, and corresponding information memory cell 61 is in first
Storage state；In beveling (001) LaAlO as shown in Figure 33Ferromagnetism manganese-salt phosphating, its film are grown in single crystalline substrate
Domain structure is vertical array as shown in Figure 4, and corresponding information memory cell 61 is in the second storage state；Finally, it is sharp
Different logic states is represented with the magnetic domain wall construction of different directions arrangement in above-mentioned information memory cell, such as from information
First storage state of memory cell 61 represents that logic state " 0 " or the second storage state from information memory cell 61 carry out table
Show logic state " 1 ".By above-mentioned steps, setting for information memory cell storage state in the read-only storage is completed one by one
Put.
Ferromagnetism manganese-salt phosphating 11 of the present invention be formed by using pulsed laser deposition mode oblique
Cut (001) LaAlO3What the Epitaxial growth of single crystalline substrate 12 was completed, had well to prepare using the purpose of epitaxial growth
The manganese-salt phosphating of crystal mass and surface smoothness.The growth of manganese-salt phosphating is an extremely complex process, outside
Substrate and the distance of target (target is consistent with the chemical composition of film), the form and dimension of LASER SPECKLE, plumage brightness in epitaxial growth
Form and dimension, substrate is relative to the position of plumage brightness, substrate temperature, oxygen pressure, and the parameter such as growth rate all can be to film
Crystal mass and surface smoothness cause very big influence.To prepare the epitaxial film that quality is higher, the beveling (001)
LaAlO3The underlayer temperature of single crystalline substrate 12 uses 780~790 DEG C, preferably 780 DEG C, 790 DEG C；Laser energy using 160~
180mJ, preferably 160mJ, 170mJ, 180mJ；Described beveling (001) LaAlO3The distance of the substrate of single crystalline substrate 12 and target is
4.1~4.5cm, preferably 4.1cm, 4.5cm；Frequency is 2~5Hz, preferably 2Hz, 3Hz, 4Hz, 5Hz；The beveling (001)
LaAlO3 single crystalline substrates 12 may be at Yu Hui centers with respect to the position of plumage brightness or deviate Yu Hui centers, be preferably in plumage brightness
The heart.The oxygen pressure of the preparation process of ferromagnetism manganese-salt phosphating 11 is 40~60Pa, preferably 40Pa, 50Pa, 60Pa.Institute
State the epitaxial growth of ferromagnetism manganese-salt phosphating 11 it is complete after, temperature setting at 650~700 DEG C, to the film in-situ annealing 10
~20 minutes, oxygen pressure was 3 × 104~5 × 104Pa during annealing.Annealing temperature is preferably 650 DEG C, 700 DEG C；Annealing time is excellent
Elect as 10 minutes, 15 minutes, 20 minutes；Oxygen pressure of annealing is preferably 3 × 104Pa、4×104Pa、5×104Pa。
Pass through embodiment 1 and the specific preparation method for introducing the embodiment of the present application described information memory cell of embodiment 2.
Embodiment 1：
Using pulsed laser deposition technique, in beveling (001) LaAlO of optical polish3Extension life is prepared in single crystalline substrate
Long La0.67Sr0.33MnO3Film；Selected beveling (001) LaAlO3The mis-cut angle of single crystalline substrate is 5 degree, chamfers skew side
(or beveling (001) LaAlO is approximately parallel to the X-direction pointed to as shown in Fig. 1 or Fig. 23(100) of single crystalline substrate
Crystal direction of principal axis), i.e. the X-direction as shown in Fig. 1 or Fig. 2.The LaAlO of this in membrane-film preparation process3The temperature of single crystalline substrate
For 780 DEG C, oxygen pressure is 50Pa, and laser energy is 170mJ, and frequency is 3Hz, and the distance between substrate and target are 4.1cm.Plating
15 minutes film time.After having prepared, in-situ annealing is carried out to film at 700 DEG C, oxygen pressure is 4 × 10 during annealing4Pa, during annealing
Between 10 minutes, then Temperature fall.Gained La0.67Sr0.33MnO3Thickness is about 100nm.The sample is labeled as LSMO/LAO-
5X, the LSMO/LAO-5X are to constitute an information memory cell.
On above- mentioned information memory cell LSMO/LAO-5X surface, i.e. La0.67Sr0.33MnO3Film surface, any selection
The region that one size is 1.5um × 1.5um, using magnetic force microscopy (MFM), scans its magnetic domain figure, magnetic force microscopy
Needle point used is magnetic the needle point of Co-Cr coating for the plating of commercialization, the vertical manganese-salt phosphating table of the needle point direction of magnetization
Face.
The magnetic domain figure that scanning is obtained shows the domain structure as shown in (a) in Fig. 7.It is wherein black, white to represent different
Magnetic moment orientation is different in magnetic domain, magnetic domain, and black represents magnetic moment and pointed to outside paper, and white represents the vertical film surface of magnetic moment and pointed in paper, black
White intersection is the neticdomain wall less parallel shown in (a) in neticdomain wall, also, Fig. 7, and its orientation is along paper horizontal direction
(X-direction i.e. as shown in Fig. 1,2), the direction and beveling (001) LaAlO used in above-mentioned LSMO/LAO-5X3Substrate
Beveling offset direction it is identical.
Transversely arranged neticdomain wall in Fig. 7 shown in (a) represents a kind of storage state, such as herein described
The first storing state.Then, a 1T magnetic fields are added to above-mentioned LSMO/LAO-5X information memory cells (magnetic field is much larger than
La0.67Sr0.33MnO3The coercivity of film, the parallel horizontal direction with paper of magnetic direction), several seconds recession demagnetizing field is measured again
The domain structure of LSMO/LAO-5X film surfaces, scanning area is identical with the measured zone of (a) in above-mentioned Fig. 7, measures MFM figures
As shown in (b) in Fig. 7.
(b) be can be seen from Fig. 7, and original transversely arranged neticdomain wall is disturbed in LSMO/LAO-5X, illustrates original
First storage state is by brokenization.External magnetic field is removed again, above-mentioned LSMO/LAO-5X information memory cells under without magnetic field environment
Place 15 days, remeasure the magnetic domain figure on LSMO/LAO-5X surfaces again afterwards, (c) display in measurement result such as Fig. 7.From Fig. 7
In (c) it is visible, the arrangement of the neticdomain wall of above-mentioned LSMO/LAO-5X film surface comes back to original transversely arranged state and (swept
Retouch interval identical with Fig. 7 (a)).
It should be noted that in the embodiment shown in figure 7, beveling (001) LaAlO used in film3Single crystalline substrate
Mis-cut angle is 5 degree, and beveling offset direction is approximately parallel to beveling (001) LaAlO3(100) crystal direction of principal axis of single crystalline substrate,
X-direction i.e. as shown in Fig. 1 or Fig. 2.
Embodiment 2：
We also select that the Y direction that beveling offset direction is pointed to as shown in Figure 3 or Figure 4 (or is approximately parallel to beveling
(001)LaAlO3(010) crystal direction of principal axis of single crystalline substrate) beveling (001) LaAlO3Monocrystalline is used as La0.67Sr0.33MnO3It is thin
The substrate of film, beveling (001) LaAlO3The mis-cut angle of monocrystalline is still 5 degree, and La is prepared over the substrate0.67Sr0.33MnO3It is thin
The method of film is identical with LSMO/LAO-5X, and the sample of gained is designated as LSMO/LAO-5Y.To the magnetic domain on LSMO/LAO-Y surfaces
And its change behavior is measured in magnetic field, measuring process is identical with LSMO/LAO-5X's.
(a) shows that LSMO/LAO-5Y magnetic domain is vertical array in Fig. 8, with (001) LaAlO3The beveling of single crystalline substrate
Offset direction is consistent.After the processing in 1T magnetic fields, the original domain structures of LSMO/LAO-5Y are destroyed (in Fig. 8 (b)), but
After the placement of about 15 days, LSMO/LAO-5Y domain structure returns to the vertical array shape as shown in (a) in Fig. 8 again
State, as a result as shown in (c) in Fig. 8.Above-mentioned experiment shows, information memory cell LSMO/LAO-5X and LSMO/ that we design
LAO-5Y has the performance that anti-magnetic interference, information can restore.
It should be noted that in the embodiment shown in fig. 8, beveling (001) LaAlO used in the film3Single crystalline substrate
Mis-cut angle be 5 degree, chamfer offset direction be approximately parallel to beveling (001) LaAlO3(010) crystal axis side of single crystalline substrate
To the i.e. Y direction as shown in Fig. 3 or Fig. 4.
It should also be noted that, less parallel described in the embodiment of the present application refers to that both direction is parallel or angle is less than and set
Determine threshold value.The threshold value can be no more than 5 ° of angle.
We also select beveling (001) LaAlO that other two mis-cut angle is 10 degree3Monocrystalline conduct
La0.67Sr0.33MnO3The substrate of film, beveling offset direction is respectively directed to X-direction as shown in Figure 1 and Y as shown in Figure 3
Direction of principal axis, is denoted as LSMO/LAO-10X and LSMO/LAO-10Y respectively, measures its domain structure, has obtained and Fig. 7, and 8 is similar
Result.
Above-described embodiment shows that the technical scheme provided according to the present invention can obtain a kind of anti-magnetic interference, information energy
The information memory cell or read only memory device of recovery.In addition, information memory cell and read-only storage that the present invention is provided can
So that oxide is fully utilized as constituent therein, such as manganese-salt phosphating and LaAlO in the embodiment of the present application3Lining
Bottom, and oxide has the characteristic that air-prevention is aoxidized in itself, therefore the present invention is the read only memory device of the anti-magnetic interference of development
Open a new way.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (12)
1. a kind of information memory cell, for read-only storage, it is characterised in that its core cell includes iron successively from top to bottom
Thin magnetic film, beveling single crystalline substrate；
Wherein, the ferromagnetic thin film has ferromagnetism at room temperature；The lattice constant of the beveling single crystalline substrate is less than described
The lattice constant of ferromagnetic thin film；The ferromagnetic thin film can be in the beveling single crystalline substrate Epitaxial growth；The ferromagnetism
The normal and the first crystal axle of the beveling single crystalline substrate of film and the contact surface of the beveling single crystalline substrate are in predetermined angle,
The predetermined angle is the mis-cut angle of the beveling single crystalline substrate；The first crystal axle of the beveling single crystalline substrate is relative to upper
The offset direction for stating the normal of contact surface between ferromagnetic thin film and single crystalline substrate is preset direction, and the offset direction is described oblique
Cut the beveling offset direction of single crystalline substrate；The ferromagnetic thin film is made up of multiple magnetic domains, and its easy axis is because by substrate
Strain controlling and parallel to the first crystal direction of principal axis of the single crystalline substrate, and with the folder of the ferromagnetic thin film normal direction
Angle is equal to the mis-cut angle of the beveling single crystalline substrate, while skew of the easy magnetizing axis relative to the ferromagnetic thin film normal
Direction is identical with the beveling offset direction of the beveling single crystalline substrate；The domain wall and teleblem of multiple magnetic domains of the ferromagnetic thin film
The less parallel of face intersection on teleblem face so that form approximately parallel neticdomain wall pattern；Under the influence of without external magnetic field, on
The orientation of intersection or above-mentioned neticdomain wall is stated parallel to the offset direction for chamferring single crystalline substrate beveling；When the neticdomain wall
When orientation is different, the storage state that described information memory cell is used to represent is different.
2. information memory cell according to claim 1, it is characterised in that the neticdomain wall arrangement figure of the ferromagnetic thin film
Case can be modulated into the neticdomain wall pattern of any orientation with the beveling offset direction of the beveling single crystalline substrate.
3. information memory cell according to claim 1, it is characterised in that the coercivity of the ferromagnetic thin film is to when young
In 100 oersteds.
4. information memory cell according to claim 1, it is characterised in that the beveling single crystalline substrate be have it is cube right
The single crystalline substrate of title property；The lattice structure of the ferromagnetic thin film grown in the beveling single crystalline substrate has cubic lattice structure
Or counterfeit cubic lattice structure, and the lattice constant of the ferromagnetic thin film is less than the lattice constant for chamferring single crystalline substrate.
5. information memory cell according to claim 4, it is characterised in that the beveling single crystalline substrate is beveling (001)
Cubic crystal, wherein first crystal axle of (001) crystal axis for the beveling single crystalline substrate；The beveling single crystalline substrate
(001) angle between the surface normal of crystal axis and the beveling single crystalline substrate is mis-cut angle, and mis-cut angle is predetermined angle；
(001) crystal axis of the beveling single crystalline substrate is inclined for beveling relative to the offset direction of the beveling single crystalline substrate surface normal
Direction is moved, beveling offset direction is preset direction；The neticdomain wall arrangement pattern of the ferromagnetic thin film can be with the beveling
(001) the beveling offset direction of single crystalline substrate is modulated into the neticdomain wall pattern of any orientation.
6. information memory cell according to claim 5, it is characterised in that the domain wall arrangement pattern of the ferromagnetic thin film
Two kinds of orthogonal domain wall patterns can be changed over beveling (001) single crystalline substrate beveling offset direction；When described oblique
When the beveling offset direction for cutting (001) single crystalline substrate is approximately parallel to (010) crystal direction of principal axis of the beveling single crystalline substrate, institute
The orientation for stating neticdomain wall is also approximately parallel to (010) crystal direction of principal axis of the beveling single crystalline substrate, described information storage
The state representation of unit storage is the first storage state；When the beveling offset direction of described beveling (001) single crystalline substrate is approximately put down
Row is when (100) crystal direction of principal axis of the beveling single crystalline substrate, and the orientation of the neticdomain wall is also approximately parallel to described
(100) crystal direction of principal axis of single crystalline substrate is chamfer, the state representation of described information memory cell storage is the second storage state；Institute
State the first storage state vertical with the neticdomain wall orientation corresponding to the second storage state.
7. information memory cell according to claim 6, it is characterised in that beveling (001) single crystalline substrate is beveling
(001)LaAlO3Monocrystal, its (001) crystal axis is LaAlO3The first crystal axle of monocrystal；Described beveling (001) LaAlO3
The mis-cut angle of monocrystal or the beveling (001) LaAlO3(001) crystal axis of crystal and the LaAlO3The normal of single-crystal surface
The angle in direction is predetermined angle；Described beveling (001) LaAlO3The surface of monocrystal is optical polishing surface.
8. information memory cell according to claim 7, it is characterised in that (001) LaAlO3The mis-cut angle of crystal
Or described beveling (001) LaAlO3(001) crystal axis of crystal and the LaAlO3The angle of the normal direction of single-crystal surface is default
Angle, the predetermined angle is 5 °~15 °.
9. information memory cell according to claim 7, it is characterised in that the ferromagnetic thin film is that Mn oxide is thin
Film, the manganese-salt phosphating composition is R(1-x)MxMnO3, wherein R is La, Nd, at least one of Sm or Pr elements, and M is
At least one of Ba, Sr or Ca element, wherein 0.1≤x≤0.6.
10. information memory cell according to claim 9, the manganese-salt phosphating composition is La(1-x)SrxMnO3, wherein
0.3≤x≤0.6 or La(1-x)BaxMnO3, wherein 0.2≤x≤0.3.
11. a kind of read-only storage, it is characterised in that including：Multiple information memory cells, firm banking and for reading
State the information read device of information memory cell storage state；
Described information memory cell is the information memory cell described in claim any one of 1-10；Described information memory cell is all
It is fixed in same susceptor surface.
12. read-only storage according to claim 11, it is characterised in that described information reading device includes giant magnetoresistance
The magnetic transducing probe or magnetic force microscopy magnetic transducing probe of effect or tunneling magnetoresistance.
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