CN105390394A - Vulcanization process of ordinary rectifier diode chip - Google Patents
Vulcanization process of ordinary rectifier diode chip Download PDFInfo
- Publication number
- CN105390394A CN105390394A CN201510708003.5A CN201510708003A CN105390394A CN 105390394 A CN105390394 A CN 105390394A CN 201510708003 A CN201510708003 A CN 201510708003A CN 105390394 A CN105390394 A CN 105390394A
- Authority
- CN
- China
- Prior art keywords
- argon gas
- reactor
- diode chip
- rectifier diode
- sulfuration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004073 vulcanization Methods 0.000 title claims abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000007789 gas Substances 0.000 claims abstract description 43
- 229910052786 argon Inorganic materials 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 238000005987 sulfurization reaction Methods 0.000 claims description 29
- 238000007664 blowing Methods 0.000 claims description 8
- 238000011549 displacement method Methods 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000005864 Sulphur Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Abstract
In order to overcome the disadvantages in the prior art, the invention aims to provide vulcanization process of an ordinary rectifier diode chip. A vulcanized reactor is employed, under an argon condition, the temperature is rapidly raised to 220 DEG C to 260 DEG C, the vulcanization is carried out for 20 minutes to 30 minutes, at the moment, the reactor internal gas and argon equivalent replacement method is used, the input flow rate of the argon and the output flow rate of reactor gas are controlled, the temperature is controlled to decrease to 150 DEG C to 180 DEG C, then the temperature is gradiently reduced to 80 DEG C to 100 DEG C in 5 to 10 DEG C of every 20 minutes, the vulcanization is carried out for 2 hours to 3 hours, and then the cooling and discharging are carried out. According to the vulcanization process, the sulfide on the chip can be effectively removed, in an argon environment, the method of rapid heating and gradient cooling is used, the burning of the edge of attached sulfide close to a hot plate can be effectively reduced, and at the same time, the flatness of the chip is not affected.
Description
Technical field
The invention belongs to the production technology field of common rectifier diode chip, especially, relate to a kind of sulfuration process of common rectifier diode chip.
Background technology
The termination electrode adopting most of diode chip for backlight unit is in the market made up of silver based cermets.Argent has some favourable attributes, comprise high conductivity and when firing silver based cermets in atmosphere to oxidation fabulous immunity.Argent also has it not enough regrettably, and a kind of deficiency is like this exactly that the Compound Phase of argent to sulphur and sulphur is worked as responsive.And silver forms nonconducting silver sulfide, money base chip is caused to occur open circuit.In order to solve this technical barrier, document has been had to propose employing jet molding, jet molding technique is a little higher than the evenness of nitrogen sulfuration method finished product, press through in journey at note, the heat that heated die plate provides is only for maintaining sulfuration, and it the composition of very fast sulfur-bearing can be heated to 190 DEG C-220 DEG C.In mold process, first the heat provided by heating will be used for the sulfide that preheating chip itself carries, and due to these sulfide, such as the heat conductivility of rubber, glue goods is poor, if the sulfide of attachment is very thick, the sulphide centres that heat will be transmitted to attachment needs the longer time.Adopt and high temperature vulcanizedly also can shorten the operating time to a certain extent, but often cause the sulfide edge of the attachment near hot plate to occur incipient scorch.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of sulfuration process of common rectifier diode chip, adopt vulcanization reaction still, under argon gas condition, be rapidly heated to 220 DEG C ~ 260 DEG C, sulfuration 20min ~ 30min, now, adopt reaction gas reactor and the equal displacement method of argon gas, control input flow velocity and the reactor gas outflow speed of argon gas, be cooled to 150 DEG C ~ 180 DEG C, then every 20min is cooled to 80 DEG C ~ 100 DEG C with 5 DEG C ~ 10 DEG C gradient types, sulfuration 2h ~ 3h, blowing of then lowering the temperature.
Technique as above, the input flow velocity of described argon gas and reactor gas outflow speed 8 ~ 10L/min, the argon gas of input is preheated to 120 DEG C in advance.
Technique as above, reduces by 5 DEG C with every 20min and carries out gradient type cooling.
Technique as above, the maximum temperature be rapidly heated is 230 DEG C, and gradient type cooling minimum temperature is 100 DEG C.
Technique as above, purity of argon is 99.99%, and the input flow velocity of argon gas is 8L/min.
The present invention effectively can remove the sulfide on chip, this sulfuration process, in the environment of argon gas, have employed the method for the then gradient type cooling that is rapidly heated, can effectively reduce and cause the sulfide edge of the attachment near hot plate to occur incipient scorch, meanwhile, not affect the evenness of chip.
Embodiment
The present invention is described in further detail below.
A kind of sulfuration process of common rectifier diode chip, adopt vulcanization reaction still, under argon gas condition, be rapidly heated to 220 DEG C ~ 260 DEG C, sulfuration 20min ~ 30min, now, adopt reaction gas reactor and the equal displacement method of argon gas, control input flow velocity and the reactor gas outflow speed of argon gas, be cooled to 150 DEG C ~ 180 DEG C, then every 20min is cooled to 80 DEG C ~ 100 DEG C, sulfuration 2h ~ 3h with 5 DEG C ~ 10 DEG C gradient types, blowing of then lowering the temperature.
Technique as above, the input flow velocity of described argon gas and reactor gas outflow speed 8 ~ 10L/min, the argon gas of input is preheated to 120 DEG C in advance.
Technique as above, reduces by 5 DEG C with every 20min and carries out gradient type cooling.
Technique as above, the maximum temperature be rapidly heated is 230 DEG C, and gradient type cooling minimum temperature is 100 DEG C.
Technique as above, purity of argon is 99.99%, and the input flow velocity of argon gas is 8L/min.
Embodiment 1
Adopt following temperature control scheme:
Be rapidly heated to 220 DEG C, sulfuration 20min ~ 30min, now, adopt reaction gas reactor and the equal displacement method of argon gas, control input flow velocity and the reactor gas outflow speed of argon gas, be cooled to 150 DEG C, then every 20min is cooled to 80 DEG C with 5 DEG C of gradient types, sulfuration 2h ~ 3h, blowing of then lowering the temperature.
Embodiment 2
Adopt following temperature control scheme:
Be rapidly heated to 260 DEG C, sulfuration 20min ~ 30min, now, adopt reaction gas reactor and the equal displacement method of argon gas, control input flow velocity and the reactor gas outflow speed of argon gas, be cooled to 150 DEG C, then every 20min is cooled to 80 DEG C with 5 DEG C of gradient types, sulfuration 2h ~ 3h, blowing of then lowering the temperature.
Embodiment 3
Adopt following temperature control scheme:
Be rapidly heated to 230 DEG C, sulfuration 20min ~ 30min, now, adopt reaction gas reactor and the equal displacement method of argon gas, control input flow velocity and the reactor gas outflow speed of argon gas, be cooled to 180 DEG C, then every 20min is cooled to 100 DEG C with 10 DEG C of gradient types, sulfuration 2h ~ 3h, blowing of then lowering the temperature.
Embodiment 4
Adopt following temperature control scheme:
Be rapidly heated to 240 DEG C, sulfuration 20min ~ 30min, now, adopt reaction gas reactor and the equal displacement method of argon gas, control input flow velocity and the reactor gas outflow speed of argon gas, be cooled to 150 DEG C, then every 20min is cooled to 80 DEG C with 5 DEG C of gradient types, sulfuration 2h ~ 3h, blowing of then lowering the temperature.
Embodiment 5
Adopt following temperature control scheme:
Be rapidly heated to 220 DEG C, sulfuration 20min ~ 30min, now, adopt reaction gas reactor and the equal displacement method of argon gas, control input flow velocity and the reactor gas outflow speed of argon gas, be cooled to 180 DEG C, then every 20min is cooled to 100 DEG C with 10 DEG C of gradient types, sulfuration 2h ~ 3h, blowing of then lowering the temperature.
Result: adopt the qualified rate of finished products 97% of embodiment 1, adopts the 2-in-1 lattice rate of finished products 76% of embodiment, adopts the qualified rate of finished products 94% of embodiment 3, adopts the qualified rate of finished products 88% of embodiment 4, adopts the qualified rate of finished products 95% of embodiment 5.
In addition, the argon gas in the technical program also can change nitrogen into, also may be used for the sulfuration of other chips, and just temperature controls different.
Certain above-described embodiment is just exemplifying of illustrating that technical conceive of the present invention and feature do and non exhaustive, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.All modifications done according to the Spirit Essence of main technical schemes of the present invention, all should be encompassed within protection scope of the present invention.
Claims (5)
1. the sulfuration process of common rectifier diode chip, it is characterized in that: adopt vulcanization reaction still, under argon gas condition, be rapidly heated to 220 DEG C ~ 260 DEG C, sulfuration 20min ~ 30min, now, adopt reaction gas reactor and the equal displacement method of argon gas, control input flow velocity and the reactor gas outflow speed of argon gas, be cooled to 150 DEG C ~ 180 DEG C, then every 20min is cooled to 80 DEG C ~ 100 DEG C, sulfuration 2h ~ 3h with 5 DEG C ~ 10 DEG C gradient types, blowing of then lowering the temperature.
2. the sulfuration process of common rectifier diode chip according to claim 1, is characterized in that: the input flow velocity of described argon gas and reactor gas outflow speed 8 ~ 10L/min, the argon gas of input is preheated to 120 DEG C in advance.
3. the sulfuration process of common rectifier diode chip according to claim 1, is characterized in that: reduce by 5 DEG C with every 20min and carry out gradient type cooling.
4. the sulfuration process of common rectifier diode chip according to claim 1, is characterized in that: the maximum temperature be rapidly heated is 230 DEG C, and gradient type cooling minimum temperature is 100 DEG C.
5. the sulfuration process of common rectifier diode chip according to claim 1 and 2, is characterized in that: purity of argon is 99.99%, and the input flow velocity of argon gas is 8L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510708003.5A CN105390394A (en) | 2015-10-28 | 2015-10-28 | Vulcanization process of ordinary rectifier diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510708003.5A CN105390394A (en) | 2015-10-28 | 2015-10-28 | Vulcanization process of ordinary rectifier diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105390394A true CN105390394A (en) | 2016-03-09 |
Family
ID=55422543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510708003.5A Pending CN105390394A (en) | 2015-10-28 | 2015-10-28 | Vulcanization process of ordinary rectifier diode chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105390394A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11253805A (en) * | 1998-03-11 | 1999-09-21 | Dainippon Ink & Chem Inc | Production of presulfurized catalyst |
| US20080036111A1 (en) * | 2006-08-09 | 2008-02-14 | Dehchuan Sun | Non-oxidizing thermally crosslinked polymeric material and medical implant |
| CN102634046A (en) * | 2012-04-26 | 2012-08-15 | 邹德荣 | Vulcanization method for improving bonding quality of adhesive |
| CN103612352A (en) * | 2013-11-15 | 2014-03-05 | 陕西特种橡胶制品有限公司 | Method for controlling geometric dimension of rubber product of nuclear power plant through temperature gradient |
-
2015
- 2015-10-28 CN CN201510708003.5A patent/CN105390394A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11253805A (en) * | 1998-03-11 | 1999-09-21 | Dainippon Ink & Chem Inc | Production of presulfurized catalyst |
| US20080036111A1 (en) * | 2006-08-09 | 2008-02-14 | Dehchuan Sun | Non-oxidizing thermally crosslinked polymeric material and medical implant |
| CN102634046A (en) * | 2012-04-26 | 2012-08-15 | 邹德荣 | Vulcanization method for improving bonding quality of adhesive |
| CN103612352A (en) * | 2013-11-15 | 2014-03-05 | 陕西特种橡胶制品有限公司 | Method for controlling geometric dimension of rubber product of nuclear power plant through temperature gradient |
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| C06 | Publication | ||
| PB01 | Publication | ||
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Application publication date: 20160309 |