CN105390386A - Etching method of BCB material - Google Patents
Etching method of BCB material Download PDFInfo
- Publication number
- CN105390386A CN105390386A CN201510717421.0A CN201510717421A CN105390386A CN 105390386 A CN105390386 A CN 105390386A CN 201510717421 A CN201510717421 A CN 201510717421A CN 105390386 A CN105390386 A CN 105390386A
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- Prior art keywords
- bcb material
- etching
- bcb
- lithographic method
- stepb
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
The invention provides an etching method of a BCB material. The method comprises the steps of (a) providing a semiconductor chip whose surface is covered by a BCB material layer to be etched, (b) using an inductively coupled plasma to etch the BCB material, wherein the etching condition is that the etching temperature is 18 to 22 DEG C, the plasma etching power is 140 to 160W, the RF power is 12 to 15W, the chamber pressure is 0.4 to 0.6mT, and the gas flow ratio of SF6 to O2 is 1:1 to 1:1.2. According to the technical scheme of the invention, a dielectric pattern with flat surface and neat and complete graphic edge can be prepared, the loss of a microwave signal by circuit interconnection layer contact can be effectively reduced, and thus the interconnection performance of a microwave integrated circuit is improved.
Description
Technical field
The present invention relates to a kind of lithographic method in semiconductor technology, concrete, the present invention relates to a kind of lithographic method of BCB material.
Technical background
In radar transmitter system, satellite communication and various communication and navigation electronic warfare system, extensively adopt microwave integrated circuit chip.The raising of chip operation speed proposes high requirement to very high speed digital and mixed signal circuit.In these circuit application and development militarily, adopt material system at a high speed as far as possible.The electronic device of compound semiconductor materials especially phosphorus-containing compound semi-conducting material has excellent frequency characteristic; more and more be subject to people's attention, utilize the electronic device of phosphorus-containing compound semi-conducting material research and development ultrahigh speed digital-to-analogue mixed signal process chip and high frequency electronic devices to become the key playing the effect of high-frequency high-speed compound semiconductor in wireless telecommunications and national defense construction gradually.
In indium phosphide compound semiconductor chip technique, spacer medium many employings BCB (phenylpropyl alcohol cyclobutane) material of the interconnected wiring of multilayer, the patterning effect of BCB material to each circuit element interconnect cause ghost effect, coupling effect and microwave crosstalk have decisive role, also determine the integrated level of chip component simultaneously.Along with the raising of device frequency, interconnection line is also more and more large on the impact of circuit performance, Circuit theory is designed with actual gap of testing larger, microwave integrated circuit chip performance and circuit scale is caused to meet with bottleneck, be difficult to increase, how reduce the ghost effect between the interconnection line caused by spacer medium, coupling effect is current problem demanding prompt solution.Therefore, need a kind of lithographic method of BCB material badly, the spacer medium figure that smooth, the graphical neat in edge in surface is intact can be prepared.
Summary of the invention
For the problems referred to above, the present invention proposes a kind of lithographic method of BCB material, the medium figure that smooth, the graphical neat in edge in surface is intact can be prepared, the loss of circuit interconnects layer contact to microwave signal can be effectively reduced, thus improve the interconnected performance of microwave integrated circuit.
Concrete, the method comprises:
A. provide semiconductor chip, described chip surface covers BCB material layer to be etched;
B. inductively coupled plasma is adopted to etch described BCB material; Wherein, etching condition is:
Etching temperature is 18 ~ 22 DEG C;
Plasma etching power is 140 ~ 160W;
Radio-frequency power is 12 ~ 15W;
Chamber pressure is 0.4 ~ 0.6mT;
SF
6: O
2gas flow ratio is 1:1 ~ 1:1.2.
Wherein, in step a, described semiconductor chip is indium phosphide microwave monolithic integrated circuit.
Wherein, in stepb, preferably, described etching temperature is 20 DEG C.
Wherein, in stepb, preferably, described plasma etching power is 150W.
Wherein, in stepb, preferably, described radio-frequency power is 15W.
Wherein, in stepb, preferably, described chamber pressure is 0.5mT.
Wherein, in stepb, preferably, described SF
6: O
2gas flow ratio is 1:1.
Technical scheme of the present invention, when inductively coupled plasma (ICP) is to the BCB material side of etching, by the accurate control of the different capacity value to the flow of etching gas in etching, ratio, two kinds of radio frequency power sources, chamber pressure and cavity temperature, make smooth, the graphical neat in edge of the BCB material surface after having etched intact, the loss of circuit interconnects layer contact to microwave signal can be effectively reduced, thus improve circuit performance.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the step schematic diagram in an embodiment of BCB material etching method provided by the invention;
Fig. 2 (a)-Fig. 2 (g) is the BCB material etch process chart for indium phosphide compound semiconductor chip in an embodiment provided by the invention;
Fig. 3 (a)-Fig. 3 (b) is the etch topography figure for the BCB material of indium phosphide compound semiconductor chip in prior art and the present invention;
Fig. 4 completes the shape appearance figure after BCB material layer etching and the second metal level deposit for indium phosphide compound semiconductor chip in an embodiment provided by the invention in prior art;
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Embodiment
The invention provides the lithographic method that the present invention proposes a kind of BCB material, the medium figure that smooth, the graphical neat in edge in surface is intact can be prepared, the loss of circuit interconnects layer contact to microwave signal can be effectively reduced, thus improve the interconnected performance of microwave integrated circuit.
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the invention are described in detail.
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.In addition, the present invention can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the invention provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.It should be noted that parts illustrated in the accompanying drawings are not necessarily drawn in proportion.Present invention omits the description of known assemblies and treatment technology and process to avoid unnecessarily limiting the present invention.
First, Fig. 1 shows the lithographic method of a kind of BCB material in one embodiment of the present of invention, and concrete, the method comprises the following steps:
First, carry out step S101: provide semiconductor chip, described chip surface covers BCB material layer to be etched.Concrete, described chip is indium phosphide microwave monolithic integrated circuit.Wherein, BCB material at this chip when carrying out multilayer wiring, as the spacer medium layer between interconnection line.The object of this step is, etches covering the BCB material of whole chip surface, makes it fill region between interconnection line, forms the contact hole be communicated with upper strata interconnection line simultaneously above interconnection line.
Secondly, step S102 is carried out: adopt inductively coupled plasma to etch described BCB material.Wherein, etching condition is: etching temperature is 18 ~ 22 DEG C; Plasma etching power is 140 ~ 160W; Radio-frequency power is 12 ~ 15W; Chamber pressure is 0.4 ~ 0.6mT; SF
6: O
2gas flow ratio is 1:1 ~ 1:1.2.Wherein, preferably, described etching temperature is 20 DEG C, and described plasma etching power is 150W, and described radio-frequency power is 15W, and described chamber pressure is 0.5mT, described SF
6: O
2gas flow ratio is 1:1.
Solidify because BCB is difficult, etch rate is fast, poor flatness, so need low temperature, small-power to realize.The etching condition provided in the present invention is more conducive to the etching of BCB material.As shown in Figure 3, wherein, the metal surface pictorial diagram that Fig. 3 (a) is formed for adopting lithographic method of the prior art, metal surface pictorial diagram after the lithographic method that Fig. 3 (b) proposes for the present invention, can find out, adopt in prior art and not only can not effectively etch BCB material, and owing to etching the paste glue phenomenon that power causes greatly; And more smooth, the graphical edge, spacer medium figure surface adopting the present invention to be formed is more neatly intact.
Below, by composition graphs 2, an alternative embodiment of the invention is described in detail.
Fig. 2 shows the BCB material etch process chart in indium phosphide compound semiconductor chip.First, see Fig. 2 (a), indium phosphide compound semiconductor chip 100 grows underlying metal 101.Described underlying metal 101 can be one or more in copper, aluminium, gold or other metals, and the method forming described underlying metal 101 can be evaporation, sputtering etc.The method of formation underlying metal 101 is the common practise in this area, does not repeat them here.
Next, as shown in Fig. 2 (b), above underlying metal 101, grow binding post 102.In order to reduce the coupling effect between interconnection line, the height of described binding post 102 is greater than the height of underlying metal 101, and preferably, the height of described binding post 102 is 3 ~ 5 times of underlying metal 101 height.Described binding post 102 can be one or more in copper, aluminium, gold or other metals, and the method forming described binding post 102 can be evaporation, sputtering etc.The method of formation binding post 102 is the common practise in this area, does not repeat them here.
Next, as shown in Fig. 2 (c), form BCB material layer 103, cover described indium phosphide compound semiconductor chip 100, underlying metal 101 and binding post 102, now the thickness of BCB material 103 is H1.Concrete, the method forming BCB material is: on substrate, apply BCB material, and at low temperature 580 DEG C and N
2dry 12 hours in atmosphere.
Next, as shown in Fig. 2 (d), planarization is carried out to described BCB material 103, makes its thickness be decreased to H2; Wherein, H2<H1.Due to BCB (chemical name: benzocyclobutene) material, it has very high vitrification point and heat decomposition temperature (namely has excellent hot properties, also more stable at relatively high temperatures), its dielectric property of also having had in addition, therefore we also use it as dielectric isolation layer, the planarization that certain thickness can realize surface must be reached, therefore, need the BCB material layer first forming thicker (H1), carrying out thinning by etching to it, obtaining thickness (H2) required in subsequent technique.Concrete, described planarization has been etched by inductively coupled plasma (ICP).Herein, the equipment adopted is: SENTECHSI500PTSA plasma etching machine.Technological parameter in described etching process is: etching temperature is 20 DEG C, and plasma etching power is 150W, and radio-frequency power is 15W, and chamber pressure is 0.5mT, described SF
6: O
2the equal 30SCCM of gas flow, namely its gas flow ratio is than being 1:1.
Next, as shown in Fig. 2 (e), form photoresist 104 on BCB material layer 103 surface, and described photoresist 104 is graphical, make it expose to be positioned at the surface of the BCB material layer 103 above binding post 102.Coating photoresist also makes its patterned process be the known contents of those of skill in the art, does not repeat them here.
Next, as shown in Fig. 2 (f), with photoresist 104 for mask, by patterned for described BCB, above binding post 102, form opening 105, expose binding post 102 top.The method of etching opening 105 is similarly inductively coupled plasma (ICP) etching, and etching process, with to carry out the etching process of planarization to BCB material in Fig. 2 (d) identical, no longer repeats at this.After (etch period can according to thickness difference add-subtract time) have etched, remove photoresist 104.
Finally, as shown in Fig. 2 (g), above described BCB material layer 103, form the second metal level 106.Described second metal level 106 is positioned at above BCB material layer, is communicated with, realizes interconnected by binding post 102 with opening 105 with underlying metal 101.The process forming the second metal level 106 is similar with the process forming underlying metal 101, no longer repeats at this.After second metal level 106 is formed, electron microscope scanning is carried out to described chip, its pattern as shown in Figure 4, can find out, smooth, the graphical neat in edge of the BCB material surface etched by method of the present invention is intact, thus can effectively reduce the loss of circuit interconnects layer contact to microwave signal, thus improve circuit performance.
Although describe in detail about example embodiment and advantage thereof, being to be understood that when not departing from the protection range of spirit of the present invention and claims restriction, various change, substitutions and modifications can being carried out to these embodiments.For other examples, those of ordinary skill in the art should easy understand maintenance scope in while, the order of processing step can change.
In addition, range of application of the present invention is not limited to the technique of the specific embodiment described in specification, mechanism, manufacture, material composition, means, method and step.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technique existed at present or be about to develop, mechanism, manufacture, material composition, means, method or step later, wherein their perform the identical function of the corresponding embodiment cardinal principle that describes with the present invention or obtain the identical result of cardinal principle, can apply according to the present invention to them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection range.
Claims (7)
1. a lithographic method for BCB material, is characterized in that, comprising:
A. provide semiconductor chip, described chip surface covers BCB material layer to be etched;
B. inductively coupled plasma is adopted to etch described BCB material; Wherein, etching condition is:
Etching temperature is 18 ~ 22 DEG C;
Plasma etching power is 140 ~ 160W;
Radio-frequency power is 12 ~ 15W;
Chamber pressure is 0.4 ~ 0.6mT;
SF
6: O
2gas flow ratio is 1:1 ~ 1:1.2.
2. the lithographic method of BCB material according to claim 1, is characterized in that, in step a, described semiconductor chip is indium phosphide microwave monolithic integrated circuit.
3. the lithographic method of BCB material according to claim 1, is characterized in that, in stepb, preferably, described etching temperature is 20 DEG C.
4. the lithographic method of BCB material according to claim 1, is characterized in that, in stepb, preferably, described plasma etching power is 150W.
5. the lithographic method of BCB material according to claim 1, is characterized in that, in stepb, preferably, described radio-frequency power is 15W.
6. the lithographic method of BCB material according to claim 1, is characterized in that, in stepb, preferably, described chamber pressure is 0.5mT.
7. the lithographic method of BCB material according to claim 1, is characterized in that, in stepb, preferably, and described SF
6: O
2gas flow ratio is 1:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510717421.0A CN105390386A (en) | 2015-10-28 | 2015-10-28 | Etching method of BCB material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510717421.0A CN105390386A (en) | 2015-10-28 | 2015-10-28 | Etching method of BCB material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105390386A true CN105390386A (en) | 2016-03-09 |
Family
ID=55422541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510717421.0A Pending CN105390386A (en) | 2015-10-28 | 2015-10-28 | Etching method of BCB material |
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| Country | Link |
|---|---|
| CN (1) | CN105390386A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050153477A1 (en) * | 2004-01-08 | 2005-07-14 | Ammlung Richard L. | Fabricating a semiconductor device using fully cured bisbenzocyclobutene |
| CN102963864A (en) * | 2012-12-11 | 2013-03-13 | 北京大学 | Method for sealing wafer-level micro-cavity based on BCB (benzocyclobutene) glue |
-
2015
- 2015-10-28 CN CN201510717421.0A patent/CN105390386A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050153477A1 (en) * | 2004-01-08 | 2005-07-14 | Ammlung Richard L. | Fabricating a semiconductor device using fully cured bisbenzocyclobutene |
| CN102963864A (en) * | 2012-12-11 | 2013-03-13 | 北京大学 | Method for sealing wafer-level micro-cavity based on BCB (benzocyclobutene) glue |
Non-Patent Citations (1)
| Title |
|---|
| E. A. DOUGLAS, ET AL.: "Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry", 《JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B》 * |
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Application publication date: 20160309 |