CN105376932A - Manufacturing method for high-precision isolated boss-shaped structure HTCC substrate - Google Patents
Manufacturing method for high-precision isolated boss-shaped structure HTCC substrate Download PDFInfo
- Publication number
- CN105376932A CN105376932A CN201510802375.4A CN201510802375A CN105376932A CN 105376932 A CN105376932 A CN 105376932A CN 201510802375 A CN201510802375 A CN 201510802375A CN 105376932 A CN105376932 A CN 105376932A
- Authority
- CN
- China
- Prior art keywords
- band
- kalimeris
- whole
- film
- htcc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Abstract
The invention discloses a manufacturing method for a high-precision isolated boss-shaped structure HTCC (high temperature co-fired ceramic) substrate. A multi-layered ceramic co-firing technology is adopted; a green tape suitable for the HTCC technology is taken as the base material; wolfram is taken as the metallization material; a shock insulator indian kalimeris herb film and a seamless spliced laminating method are adopted; according to the manufactured isolated boss-shaped structure HTCC substrate, the processing precision for the outer boss can achieve plus and minus 0.10 mm; the position offset of an upper layer and a lower layer is less than 0.20 mm; an interconnection wiring relation is ensured among the layers, and the HTCC substrate can meet all the electrical property index requirements of the national military standard.
Description
Technical field
The present invention is that a kind of high accuracy isolates boss type structure HTCC manufacture of substrates, is for special-shaped manufacture of substrates, belongs to HTCC multi-layer ceramics technical field.
Background technology
High Temperature Co Fired Ceramic (HTCC) technology is that the refractory metal slurries such as tungsten are printed on the aluminium oxide curtain coating green band of 92-96% by a kind of employing, then through lamination, after lamination, burns the technology be integrated under the high temperature of 1500-1600 DEG C altogether.The advantages such as it is high that High Temperature Co Fired Ceramic (HTCC) has mechanical strength compared with LTCC (LTCC), stable chemical nature, and coefficient of heat transfer is high and the cost of material is low.
HTCC substrate is the pdm substrate made based on high temperature co-firing multi-layer ceramics technology, for various Electronic Packaging field.In order to adapt to the needs of different packing forms, the contour structures of substrate varies.Due to the limitation of HTCC technology, its shaping substrate mostly is inner concave shape structure, cannot obtain isolated male type structure by common lamination layer compression technology.Thus limit the high-dimensional application of substrate.
Summary of the invention
The present invention proposes a kind of high accuracy and isolates boss type structure HTCC manufacture of substrates, its objective is that obtaining a kind of high accuracy isolates boss type structure HTCC substrate, solves the machine-shaping problem of high-precision section substrate.
Technical solution of the present invention: a kind of high accuracy isolates boss type structure HTCC manufacture of substrates, comprises following processing step:
1) adopt the curtain coating green band being applicable to HTCC technique, successively punch according to resultant metal cabling requirement, filling perforation, the operations such as printing;
2) the green band completing metallization pattern filling perforation and printing is carried out lamination and hot pressing respectively according to projection section and base part, hot pressing pressure is 100-300psi;
3) by through hot pressing projection section green band adopt laser ablation technology, by porcelain piece projection section according to product requirement dimensioned out, in the course of processing, whole folded cavity green band and independent boss porcelain piece all retain;
4) the whole storied porcelain band of projection section is after Laser ablation terminates, and remains in the dust of independent boss porcelain piece and whole folded cavity porcelain belt surface after adopting binding dust roller or hairbrush cleaning laser ablation;
5) adopt laser ablation technology to process the kalimeris film that there is cavity an inside, after processing, remove the chamber portion in kalimeris film, retain the kalimeris film of whole band cavity;
6) by whole storied porcelain band base part, the kalimeris film of whole of processing band cavity, whole storied porcelain band and the boss porcelain piece of band cavity are stacked on stacked plate successively, and carry out hot pressing, hot compression parameters is 500-1000psi;
7), after hot pressing terminates, the boss clout on whole storied porcelain upper strata and kalimeris film are together taken out, obtains the whole storied porcelain of boss type structural substrate;
8) cut through raw by the whole storied porcelain of boss type structural substrate, sintering, obtains boss type HTCC substrate.
Beneficial effect of the present invention: adopt technology of the present invention can make high accuracy and isolate boss type structure HTCC substrate, can realize isolated outer lug boss machining accuracy is
0.10mm, and guarantee that the skew of levels position is less than 0.20mm, guarantee interconnection wiring relation between layers, guarantee that HTCC substrate meets every requirement on electric performance of national military standard, conduction band resistance is less than 1 Ω, and between conduction band, insulation resistance is greater than 1 × 10
10Ω (500V).The present invention opens new technical method in different in nature HTCC substrate processing technique field, can meet the requirement of all kinds of substrate various dimensions encapsulation.
Accompanying drawing explanation
Accompanying drawing 1 is the front view that high accuracy isolates boss type structure HTCC substrate.
Embodiment
High accuracy isolates a manufacture method for boss type structure HTCC substrate, comprises following processing step:
1) adopt the curtain coating green band being applicable to HTCC technique, successively punch according to resultant metal cabling requirement, filling perforation, printing operation;
2) the green band completing metallization pattern filling perforation and printing is carried out first time lamination and hot pressing respectively according to projection section and base part on stacked plate, hot pressing pressure is 100-300psi;
3) by through hot pressing projection section green band adopt laser ablation technology, by porcelain piece projection section according to product requirement dimensioned out, in the course of processing, whole folded cavity green band and independent boss porcelain piece all retain;
4) the whole storied porcelain band of projection section is after Laser ablation terminates, and remains in the dust of independent boss porcelain piece and whole folded cavity porcelain belt surface after adopting binding dust roller or hairbrush cleaning laser ablation;
5) adopt laser ablation technology to process the kalimeris film that there is cavity an inside, remove the chamber portion in kalimeris film, retain the kalimeris film of whole band cavity;
6) by whole storied porcelain band base part, the kalimeris film of whole of processing band cavity, whole storied porcelain band and the boss porcelain piece of band cavity carry out second time lamination and hot pressing on stacked plate, and hot compression parameters is 500-1000psi;
7), after hot pressing terminates, the boss clout on whole storied porcelain upper strata and kalimeris film are together taken out, obtains the whole storied porcelain of boss type structural substrate;
8) cut through raw by the whole storied porcelain of boss type structural substrate, sintering, obtains boss type HTCC substrate.
The curtain coating green band of described applicable HTCC processing, selects green band book size can be 4 inches, 6 inches, 8 inches, gauge is 0.10-0.40mm, and as this processing object substrate, described metallized traces requires successively to punch, filling perforation, printing operation, is using tungsten filling perforation slurry and tungsten printing slurry as common burning Metal slurry, utilizes multi-layer ceramics technique to punch to green band, filling perforation, printing operation.
The described chamber portion removed in kalimeris film, retain the kalimeris film of whole band cavity, remove the dottle pin layer that the kalimeris film of chamber portion is substrate chamber body periphery, kalimeris film cavity figure with green part cavity size for benchmark, 0.10-0.20mm larger than green part cavity size.
Described kalimeris film, after Laser ablation, obtains a kalimeris film with cavity, with erasing rubber wiping kalimeris film internal cavities edge gently, smooths the melted edge that laser ablation causes.
Described stacked plate surrounding is provided with at least 4 fixing lamination posts, the position dimension of these lamination posts and the lamination apertures one_to_one corresponding of green band surrounding.
Described second time lamination order is: first just whole storied porcelain band base part is stacked on stacked plate according to reference column, secondly the kalimeris film of whole that processes band cavity is stacked on green band pedestal with the prone direction of silicone grease, then the whole storied porcelain band of band cavity is stacked on kalimeris film, finally boss porcelain piece is embedded in the cavity of whole stacked strips cavity green band one by one according to cavity size.
Described whole storied porcelain band is after hot pressing, and fractionation order is: with the kalimeris film of middle separation pad for boundary layer, is first taken out by the whole folded cavity green band above kalimeris film, then takes out kalimeris film, finally take out the whole folded product green band of band boss.
The evagination bench-type structure HTCC substrate of described making, can realize isolated outer lug boss machining accuracy is
0.10mm, and guarantee that the skew of levels position is less than 0.20mm, guarantee interconnection wiring relation between layers, guarantee that HTCC substrate meets every requirement on electric performance of national military standard, conduction band resistance is less than 1 Ω, and between conduction band, insulation resistance is greater than 1 × 10
10Ω (500V).
Claims (8)
1. high accuracy isolates a manufacture method for boss type structure HTCC substrate, it is characterized in that comprising following processing step:
1) adopt the curtain coating green band being applicable to HTCC technique, successively punch according to resultant metal cabling requirement, filling perforation, printing operation;
2) the green band completing metallization pattern filling perforation and printing is carried out first time lamination and hot pressing respectively according to projection section and base part on stacked plate, hot pressing pressure is 100-300psi;
3) by through hot pressing projection section green band adopt laser ablation technology, by porcelain piece projection section according to product requirement dimensioned out, in the course of processing, whole folded cavity green band and independent boss porcelain piece all retain;
4) the whole storied porcelain band of projection section is after Laser ablation terminates, and remains in the dust of independent boss porcelain piece and whole folded cavity porcelain belt surface after adopting binding dust roller or hairbrush cleaning laser ablation;
5) adopt laser ablation technology to process the kalimeris film that there is cavity an inside, remove the chamber portion in kalimeris film, retain the kalimeris film of whole band cavity;
6) by whole storied porcelain band base part, the kalimeris film of whole of processing band cavity, whole storied porcelain band and the boss porcelain piece of band cavity carry out second time lamination and hot pressing on stacked plate, and hot compression parameters is 500-1000psi;
7), after hot pressing terminates, the boss clout on whole storied porcelain upper strata and kalimeris film are together taken out, obtains the whole storied porcelain of boss type structural substrate;
8) cut through raw by the whole storied porcelain of boss type structural substrate, sintering, obtains boss type HTCC substrate.
2. a kind of high accuracy according to claim 1 isolates the manufacture method of boss type structure HTCC substrate, it is characterized in that the curtain coating green band of described applicable HTCC processing, select green band book size can be 4 inches, 6 inches, 8 inches, gauge is 0.10-0.40mm, as this processing object substrate, described metallized traces requires successively to punch, filling perforation, printing operation, using tungsten filling perforation slurry and tungsten printing slurry as common burning Metal slurry, multi-layer ceramics technique is utilized to punch to green band, filling perforation, printing operation.
3. a kind of high accuracy according to claim 1 isolates boss type structure HTCC manufacture of substrates, it is characterized in that the described chamber portion removed in kalimeris film, retain the kalimeris film of whole band cavity, remove the dottle pin layer that the kalimeris film of chamber portion is substrate chamber body periphery, kalimeris film cavity figure with green part cavity size for benchmark, 0.10-0.20mm larger than green part cavity size.
4. a kind of high accuracy according to claim 1 isolates boss type structure HTCC manufacture of substrates, it is characterized in that described kalimeris film is after Laser ablation, obtain a kalimeris film with cavity, with erasing rubber wiping kalimeris film internal cavities edge gently, smooth the melted edge that laser ablation causes.
5. a kind of high accuracy according to claim 1 isolates boss type structure HTCC manufacture of substrates, it is characterized in that described stacked plate surrounding is provided with at least 4 fixing lamination post, the position dimension of these lamination posts and lamination apertures one_to_one corresponding of green band surrounding.
6. a kind of high accuracy according to claim 1 isolates boss type structure HTCC manufacture of substrates, it is characterized in that described second time lamination order is: first just whole storied porcelain band base part is stacked on stacked plate according to reference column, secondly the kalimeris film of whole that processes band cavity is stacked on green band pedestal with the prone direction of silicone grease, then the whole storied porcelain band of band cavity is stacked on kalimeris film, finally boss porcelain piece is embedded in the cavity of whole stacked strips cavity green band one by one according to cavity size.
7. a kind of high accuracy according to claim 1 isolates boss type structure HTCC manufacture of substrates, it is characterized in that described whole storied porcelain band is after hot pressing, fractionation order is: with the kalimeris film of middle separation pad for boundary layer, first the whole folded cavity green band above kalimeris film is taken out, then take out kalimeris film, finally take out the whole folded product green band of band boss.
8. a kind of high accuracy according to claim 1 isolates boss type structure HTCC manufacture of substrates, it is characterized in that the evagination bench-type structure HTCC substrate of described making, and can realize isolated outer lug boss machining accuracy is
0.10mm, and guarantee that the skew of levels position is less than 0.20mm, guarantee interconnection wiring relation between layers, guarantee that HTCC substrate meets every requirement on electric performance of national military standard, conduction band resistance is less than 1 Ω, and between conduction band, insulation resistance is greater than 1 × 10
10Ω (500V).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510802375.4A CN105376932B (en) | 2015-11-19 | 2015-11-19 | A kind of high accuracy isolates boss type structure HTCC manufacture of substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510802375.4A CN105376932B (en) | 2015-11-19 | 2015-11-19 | A kind of high accuracy isolates boss type structure HTCC manufacture of substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105376932A true CN105376932A (en) | 2016-03-02 |
| CN105376932B CN105376932B (en) | 2018-01-16 |
Family
ID=55378612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510802375.4A Active CN105376932B (en) | 2015-11-19 | 2015-11-19 | A kind of high accuracy isolates boss type structure HTCC manufacture of substrates |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105376932B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108177422A (en) * | 2017-11-29 | 2018-06-19 | 中国电子科技集团公司第五十五研究所 | The two-sided isolated boss structure forming method of multi-layer ceramics |
| CN113286436A (en) * | 2021-05-26 | 2021-08-20 | 中国电子科技集团公司第五十四研究所 | Manufacturing method of low-cost island structure LTCC substrate |
| CN114043606A (en) * | 2021-12-09 | 2022-02-15 | 中国振华集团云科电子有限公司 | Preparation method of ceramic substrate with island structure |
| CN114195527A (en) * | 2021-11-15 | 2022-03-18 | 中国电子科技集团公司第五十五研究所 | Sintering method of step-structured high-temperature co-fired ceramic |
| CN116598207A (en) * | 2023-04-14 | 2023-08-15 | 株洲艾森达新材料科技有限公司 | Manufacturing method of high-precision HTCC substrate with isolated boss structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040108058A1 (en) * | 2002-12-06 | 2004-06-10 | Jen-I Kuo | Lamination process of packaging substrate |
| US20090148667A1 (en) * | 2007-12-07 | 2009-06-11 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing ceramic laminated substrate and ceramic laminated substrate manufactured using the same |
| CN102724822A (en) * | 2012-06-25 | 2012-10-10 | 中国航天科工集团第二研究院二十三所 | Control technological method for planeness of surface of LTCC substrate |
| CN104103525A (en) * | 2014-06-24 | 2014-10-15 | 中国电子科技集团公司第十研究所 | Control method for defects of cavity structure of LTCC (Low Temperature Co-fired Ceramic) substrate |
| CN104284534A (en) * | 2014-10-29 | 2015-01-14 | 中国兵器工业集团第二一四研究所苏州研发中心 | Ultra-multi-layer ultra-deep-cavity LTCC substrate manufacturing technology |
-
2015
- 2015-11-19 CN CN201510802375.4A patent/CN105376932B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040108058A1 (en) * | 2002-12-06 | 2004-06-10 | Jen-I Kuo | Lamination process of packaging substrate |
| US20090148667A1 (en) * | 2007-12-07 | 2009-06-11 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing ceramic laminated substrate and ceramic laminated substrate manufactured using the same |
| CN102724822A (en) * | 2012-06-25 | 2012-10-10 | 中国航天科工集团第二研究院二十三所 | Control technological method for planeness of surface of LTCC substrate |
| CN104103525A (en) * | 2014-06-24 | 2014-10-15 | 中国电子科技集团公司第十研究所 | Control method for defects of cavity structure of LTCC (Low Temperature Co-fired Ceramic) substrate |
| CN104284534A (en) * | 2014-10-29 | 2015-01-14 | 中国兵器工业集团第二一四研究所苏州研发中心 | Ultra-multi-layer ultra-deep-cavity LTCC substrate manufacturing technology |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108177422A (en) * | 2017-11-29 | 2018-06-19 | 中国电子科技集团公司第五十五研究所 | The two-sided isolated boss structure forming method of multi-layer ceramics |
| CN113286436A (en) * | 2021-05-26 | 2021-08-20 | 中国电子科技集团公司第五十四研究所 | Manufacturing method of low-cost island structure LTCC substrate |
| CN114195527A (en) * | 2021-11-15 | 2022-03-18 | 中国电子科技集团公司第五十五研究所 | Sintering method of step-structured high-temperature co-fired ceramic |
| CN114043606A (en) * | 2021-12-09 | 2022-02-15 | 中国振华集团云科电子有限公司 | Preparation method of ceramic substrate with island structure |
| CN114043606B (en) * | 2021-12-09 | 2023-08-15 | 中国振华集团云科电子有限公司 | Preparation method of ceramic substrate with island structure |
| CN116598207A (en) * | 2023-04-14 | 2023-08-15 | 株洲艾森达新材料科技有限公司 | Manufacturing method of high-precision HTCC substrate with isolated boss structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105376932B (en) | 2018-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105376932A (en) | Manufacturing method for high-precision isolated boss-shaped structure HTCC substrate | |
| CN102668271B (en) | Wiring method of attachment and function element | |
| CN103601501B (en) | Low temperature co-fired ceramic method by mixed conductor structure | |
| JP3547327B2 (en) | Manufacturing method of ceramic multilayer substrate | |
| JP5971447B2 (en) | Manufacturing method of ceramic substrate and module component | |
| CN105021326A (en) | One-piece ceramic capacitance pressure transducer and manufacture method | |
| JP4508488B2 (en) | Manufacturing method of ceramic circuit board | |
| JP2004214573A (en) | Manufacturing method for multilayered ceramic substrate | |
| KR102166591B1 (en) | Method for manufacturing multilayer ceramic electronic component | |
| CN106206012B (en) | The manufacturing method of monolithic ceramic electronic component | |
| CN109585162B (en) | Low-stress single-layer chip capacitor and preparation method thereof | |
| US20090148667A1 (en) | Method of manufacturing ceramic laminated substrate and ceramic laminated substrate manufactured using the same | |
| CN107117987A (en) | A kind of glass-ceramic group and preparation method thereof | |
| JP4606115B2 (en) | Multilayer substrate and manufacturing method thereof | |
| CN106465536A (en) | Mother ceramic substrate, ceramic substrate, mother module component, module component, and manufacturing method for mother ceramic substrate | |
| KR101108823B1 (en) | Method of manufacturing ceramic substrate | |
| TWI713278B (en) | Arrester and method for fabricating the same | |
| CN114710847B (en) | Electronic ceramic heater for semiconductor chip sealing and testing and preparation method thereof | |
| TWI328993B (en) | ||
| CN106032327B (en) | Ceramic-based metamaterial and manufacturing method thereof | |
| JP2000036665A (en) | Manufacture of multilayer ceramic board | |
| JP6362384B2 (en) | Manufacturing method of multilayer ceramic substrate | |
| JP4391284B2 (en) | Multilayer substrate manufacturing method | |
| JP2005085995A (en) | Manufacturing method of ceramic substrate | |
| TW555721B (en) | Manufacturing method of low temperature cofired ceramic |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |