CN105374932B - 一种通过极化方向调控霍尔效应的结构 - Google Patents
一种通过极化方向调控霍尔效应的结构 Download PDFInfo
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- CN105374932B CN105374932B CN201510689015.8A CN201510689015A CN105374932B CN 105374932 B CN105374932 B CN 105374932B CN 201510689015 A CN201510689015 A CN 201510689015A CN 105374932 B CN105374932 B CN 105374932B
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- 230000005355 Hall effect Effects 0.000 title claims abstract description 46
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 17
- 230000001276 controlling effect Effects 0.000 title claims abstract description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 129
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 65
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 36
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 8
- 229910002244 LaAlO3 Inorganic materials 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 229910019828 La0.7Sr0.3CoO3 Inorganic materials 0.000 claims description 3
- 229910002182 La0.7Sr0.3MnO3 Inorganic materials 0.000 claims description 3
- 229910003200 NdGaO3 Inorganic materials 0.000 claims description 3
- 229910002353 SrRuO3 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 230000005291 magnetic effect Effects 0.000 abstract description 34
- 229910052709 silver Inorganic materials 0.000 abstract description 14
- 239000004332 silver Substances 0.000 abstract description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052742 iron Inorganic materials 0.000 abstract description 10
- 230000010287 polarization Effects 0.000 abstract description 8
- 238000011160 research Methods 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 7
- 230000007246 mechanism Effects 0.000 abstract description 4
- 230000005856 abnormality Effects 0.000 abstract description 3
- 238000004458 analytical method Methods 0.000 abstract description 3
- 230000005621 ferroelectricity Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 229910002075 lanthanum strontium manganite Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007775 ferroic material Substances 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910002902 BiFeO3 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003121 nonmonotonic effect Effects 0.000 description 1
- 229920000314 poly p-methyl styrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 206010063401 primary progressive multiple sclerosis Diseases 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
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- Hall/Mr Elements (AREA)
Abstract
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CN105374932A CN105374932A (zh) | 2016-03-02 |
CN105374932B true CN105374932B (zh) | 2017-11-10 |
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CN105552216B (zh) * | 2016-01-26 | 2018-02-02 | 郑州工商学院 | 一种增强反常霍尔效应的方法 |
CN107132497B (zh) * | 2017-04-28 | 2020-05-12 | 西安工业大学 | 用于无损检测半导体薄膜霍尔效应的基片及其制备方法 |
CN110880927A (zh) * | 2019-11-04 | 2020-03-13 | 中国科学院西安光学精密机械研究所 | 一种集成式接近开关、接近开关系统及接近开关制造方法 |
CN114487941B (zh) * | 2022-04-06 | 2022-07-12 | 南方电网数字电网研究院有限公司 | 磁传感器、磁场测量方法及磁传感器的制备方法 |
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CN100555698C (zh) * | 2006-11-24 | 2009-10-28 | 中国科学院物理研究所 | 一种金属多层膜霍尔器件及其制备方法 |
CN102447055A (zh) * | 2010-10-09 | 2012-05-09 | 中国科学院物理研究所 | 一种磁性金属薄膜型霍尔器件及其制备方法 |
CN103137850B (zh) * | 2013-02-21 | 2017-05-31 | 中国科学院物理研究所 | 磁性多层膜霍尔元件及其制备方法 |
CN104752604B (zh) * | 2015-03-09 | 2017-10-03 | 清华大学 | 一种电场调控的反铁磁基霍尔器件及其制备方法 |
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