CN105369211A - Chemical vapor deposition system, arrangement of chemical vapor deposition systems, and chemical vapor deposition method - Google Patents

Chemical vapor deposition system, arrangement of chemical vapor deposition systems, and chemical vapor deposition method Download PDF

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Publication number
CN105369211A
CN105369211A CN201510512203.3A CN201510512203A CN105369211A CN 105369211 A CN105369211 A CN 105369211A CN 201510512203 A CN201510512203 A CN 201510512203A CN 105369211 A CN105369211 A CN 105369211A
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China
Prior art keywords
phase deposition
coating chamber
chemical gas
fluid
deposition system
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Pending
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CN201510512203.3A
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Chinese (zh)
Inventor
N·P·德斯科维奇
W·D·格罗夫
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Silcotek Corp
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Silcotek Corp
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Publication of CN105369211A publication Critical patent/CN105369211A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

A chemical vapor deposition system, method and arrangement of systems are disclosed. The system includes a coating chamber, a fluid introduction system, and an arrangement of radiant heating elements. The coating chamber has an enclosing border extending around a coating region and an access portion positioned in an axial orientation relative to the enclosing border, the coating chamber being in a fixed and horizontal position. The fluid introduction system includes a vacuum pump and a fluid introduction arrangement arranged and disposed to introduce a fluid to the coating chamber for chemical vapor deposition coating of an article in the coating chamber. The arrangement of radiant heating elements is positioned outside of the coating chamber and is thermally connected with the enclosing border of the coating chamber to heat zones within the coating chamber. The method uses the system. The arrangement includes more than one of the chemical vapor deposition systems.

Description

The device of chemical gas-phase deposition system, chemical gas-phase deposition system and chemical gaseous phase depositing process
Technical field
The present invention relates to the method for system and the manipulation room with treatment chamber.More particularly, the present invention relates to the apparatus and method of chemical gas-phase deposition system, system.
Background technology
Traditionally, due to the handiness of operating parameters, chemical vapour deposition is the Perfected process for coated substrate always.Chemical vapour deposition relative uniformity can produce coated goods, and its cost is lower than the system of operation under more high-precision parameter (such as temperature range and pressure range).But people experience for a long time needs the process of more narrow temperature scope and pressure range and coating method to be not suitable for chemical gas-phase deposition system always, this is because chemical gas-phase deposition system can not keep accurate temperature and/or pressure range.
Many known chemical gas phase systems operate being greater than under the temperature difference of 50 DEG C.Because passage portion is positioned in the vertical position relative to coating chamber, multiple known chemical gas-phase deposition system is subjected to thermosteresis and/or other unexpected operational effect.And other known chemical gas-phase deposition systems depend on convection heat while rotary coating room, this brings restriction can to the ability of some material of coating and the mechanical features formed may be out of order or introduce additional discordance during operation.
Known chemical gas-phase deposition system also cannot walk abreast in conjunction with other or sequence system operates.Because hope once keeps one group of parameter, and perform this operation separately always.But this independent manipulation require repeats some part of chemical gas-phase deposition system, and do not allow the beneficial effect obtaining operating by operating multiple chemical gas-phase deposition system together.Such as, the parallel work-flow (compared to sequential operation) of multiple system can cause larger consumption to energy net.This consumption may due to power consumption rate costly and/or the total stress approach of shear strength that may unnecessarily increase energy net.
The trial that initial production can overcome the system of all above-mentioned shortcomings is unsuccessful.Such as, some configuration comprising diaphragm valve causes dust to enter in valve, and this adversely can affect operation.In addition, adopt the operation of vacuumometer (it operates based on the thermosteresis caused by the convection current under elevated pressures) that unexpected result can be obtained.
Compared with prior art demonstrating chemical gas-phase deposition systems of one or more improvement, the device of chemical gas-phase deposition system and chemical gaseous phase depositing process will be needed for this area.
Summary of the invention
In one embodiment, chemical gas-phase deposition system comprises the device of coating chamber, fluid drawing-in system and radiant heater element.Coating chamber has around the closed boundary of coating zone extension and with the passage portion of locating relative to the axial orientation of closed boundary, and described coating chamber is in be fixed and the position of level.Fluid drawing-in system comprises vacuum pump and fluid introducing device, and described fluid drawing-in system is arranged and is arranged to fluid is introduced coating chamber and covers to carry out chemical vapour phase deposition coating to goods in coating chamber.The device of radiant heater element to be positioned at outside coating chamber and with the closed boundary of coating chamber to the heating zone hot tie-in in coating chamber.Radiant heater element is arranged and makes during being arranged in chemical vapour deposition the temperature difference keeping being less than 50 DEG C in coating chamber.
In another embodiment, the device of chemical gas-phase deposition system comprise there is the first coating chamber the first chemical gas-phase deposition system, there is the second chemical gas-phase deposition system of the second coating chamber and there is the fluid drawing-in system of vacuum pump and fluid introducing device, described fluid drawing-in system is arranged and is arranged to the one or both introduced by fluid in the first coating chamber and the second coating chamber and covers to carry out chemical vapour phase deposition coating.Being arranged at least partially of fluid drawing-in system operates together with the second chemical gas-phase deposition system with the first chemical gas-phase deposition system.
In another embodiment, chemical gaseous phase depositing process comprises the first chemical gas-phase deposition system of providing and comprising the first coating chamber and provides the fluid drawing-in system comprising vacuum pump and fluid introducing device, and described fluid drawing-in system is arranged and is arranged to fluid is introduced the first coating chamber.One or both during described method also comprises the steps: (1) is arranged and is arranged to keep the radiant heater element of temperature by optionally operation, make to keep in the first coating chamber being less than during chemical vapour deposition the second chemical gas-phase deposition system that the temperature difference of 50 DEG C and (2) make to comprise the second coating chamber and fluid drawing-in system at least partially together with operate.
By the more detailed description made below in conjunction with accompanying drawing, other features and advantages of the present invention will be apparent, and wherein accompanying drawing describes principle of the present invention by way of example.
Accompanying drawing explanation
Fig. 1 is the skeleton view of the chemical gas-phase deposition system according to a disclosure embodiment, shows coating chamber and passage portion.
Fig. 2 is the skeleton view of the chemical gas-phase deposition system according to a disclosure embodiment, shows the fluid drawing-in system comprising vacuum pump and fluid introducing device.
Fig. 3 is the schematic diagram with the coating chamber Zhong Ge district of the chemical gas-phase deposition system of 12 prism geometry according to a disclosure embodiment.
Fig. 4 is the schematic diagram of the device of chemical gas-phase deposition system, wherein fluid drawing-in system be arranged at least partially operate together with two or more chemical gas-phase deposition systems.
Whenever possible, the identical reference number of use is all represented identical parts by institute's drawings attached.
Embodiment
Present disclose provides chemical gas-phase deposition system, the device of chemical gas-phase deposition system and chemical gaseous phase depositing process.Such as with fail to comprise compared with one or more the concept in feature disclosed herein, embodiment of the present disclosure to allow when being less than the discernible temperature difference evenly or homogeneous heating is (such as substantially, well heater is not had at coating zone, reverberator, when water-cooled element and/or heat dissipation element), reduce or eliminate indoor focus or cold spot, allow the geometrical shape of more wide region (such as, narrow passage/pipe, three-dimensional complex geometric shapes and/or to hide or not in the geometrical shape of visual line of sight, such as be positioned at pin, pipe, probe, within stationary installation etc.) coating, allow the coating of bulk article, allow the energy management carried out based on the multiple system of operation, allow resource management (such as, by one or more parts are used for two or more systems), or allow their combination.
Fig. 1 shows chemical gas-phase deposition system 100.Chemical gas-phase deposition system 100 can under multiple operating parameters manner of execution.These parameters are kept: such as carry out measuring, monitor, regulate and/or modeling with on-the-spot and/or long-range mode (such as, passing through internet) about the data of system or other information by operating as follows.Suitable parameter includes but not limited to the composition of energy use/consumption, pressure, temperature, flow velocity and/or flow time length and one or more fluids.Such as, in one embodiment, by operating multiple chemical gas-phase deposition system 100 under the consumption lower than suitable energy consumption such as 30kw, 35kw and/or 40kw, energy management is performed.
By any suitable device monitor force value.In one embodiment, by capacitance manometer monitor force.Suitable pressure include but not limited between about 0.01psia and about between 200psia, between about 1.0psia and about between 100psia, between about 5psia and about between 40psia, between about 20psia and about between 25psia, about 1.0psia, about 5psia, about 20psia, about 23psia, about 25psia, about 40psia, about 100psia, 200psia or any appropriate combination, sub-portfolio, scope or subrange wherein.
By any suitable device monitoring temperature value.In one embodiment, by thermal measurement device 135 such as thermopair monitoring temperature as shown in Figure 1.Suitable temperature includes but not limited between about 100 DEG C and about 700 DEG C, between about 100 DEG C and about 450 DEG C, between about 100 DEG C and about 300 DEG C, between about 200 DEG C and about 500 DEG C, between about 300 DEG C and about 600 DEG C, between about 450 DEG C and about 700 DEG C, about 700 DEG C, about 450 DEG C, about 100 DEG C, between about 200 DEG C and 600 DEG C, between about 300 DEG C and 600 DEG C, between about 400 DEG C and about 500 DEG C, about 300 DEG C, about 400 DEG C, about 500 DEG C, about 600 DEG C, or its any suitable combination, sub-portfolio, scope or subrange.
In one embodiment, monitor, calculate or measure flow velocity.Suitable flow velocity include but not limited to based on the flowing time length between about 30 minutes and 6 hours, between about 30 minutes and about 4 hours, between about 1 hour and about 4 hours, most as many as 10 hours, most as many as about 4 hours, most as many as about 2 hours, most as many as about 30 minutes, 10 minutes to about 24 hours, about 30 minutes to about 24 hours, about 10 minutes, about 30 minutes, about 15 hours, about 24 hours or its any combination, sub-portfolio, scope or subrange.
The appropriate combination thing flowing to system 100 includes but not limited to that dimethylsilane (such as, gaseous form), trimethyl silane, dialkyl silyl dihydride, aIkylsilyl groups Trihydride, nonflammable material (such as, dialkyl silyl dihydride and/or aIkylsilyl groups Trihydride), rare gas element (such as, nitrogen, helium and/or argon gas, as dividing potential drop thinner), thermal cracking material (such as, carbon silane, such as decolorizing carbon silane), the material of carbon silyl (dimethyl silanyl or trimethylsilyl fragment) compound can be carried out, water (is used alone, use together with zero air, or use together with rare gas element), oxygen, air (is used alone, be not used alone and/or use as zero air), Nitrous Oxide, ozone, superoxide or their combination.As used herein, term " zero air " refers to the air having and be less than about 0.1ppm total hydrocarbon.
System 100 comprises coating chamber 101 and fluid drawing-in system 201, as explained in connection with fig.2 with described.Coating chamber 101 is in be fixed and the position of level.As used herein, the direction term of such as " level " refer to relative to or substantially relative to the direction of gravity direction.Such as, term " level " should be considered as perpendicular to or be substantially perpendicular to gravity direction.
Refer again to Fig. 1, in one embodiment, coating chamber 101 comprises passage portion 107, such as, have the salable assembly 131 of door 133, packing ring 123, pivot feature 125, force lock-in feature 127, interlocking features 129, for providing any other suitable characteristics to the sealing of passage portion or their combination.Door 133 is by comprising internal heating element to heat, or single material, such as steel.In one embodiment, passage portion 107 is flatly located and/or is located on the axial orientation relative to closed boundary 103.Second in closed boundary 103 or rear wall also can be included.
Coating chamber 101 is symmetrical, substantial symmetry or asymmetrical.In one embodiment, coating chamber 101 is symmetrical or substantial symmetry along at least 1 plane, along at least 2 planes, along at least 3 planes, along at least 4 planes, along at least 6 planes, along a unlimited amount plane, along one or more sagittal plane, along one or more axis plane, along horizontal plane, along vertical plane or its any suitable combination or sub-portfolio.
Coating chamber 101 comprises any suitable dimension allowing coating goods or multiple goods.Suitable size includes but not limited to that the minimum width of closed boundary 103 is for being greater than 10cm, being greater than 20cm, being greater than 30cm, being greater than 100cm, being greater than 300cm, being greater than 1,000cm, between 10cm and 100cm, between 100cm and 300cm, between 100cm and 1, between 000cm, between 300cm and 1,000cm, can evenly or substantially any other minimum width of homogeneous heating or any appropriate combination, sub-portfolio, scope or subrange wherein.Suitable volume includes but not limited to be greater than 3,000cm 3, be greater than 5,000cm 3, be greater than 10,000cm 3, be greater than 20,000cm 3, between 3,000cm 3with 5,000cm 3between, between 5,000cm 3with 10,000cm 3between, between 5,000cm 3with 20,000cm 3between, between 10,000cm 3with 20,000cm 3between, can evenly or substantially any other volume of homogeneous heating or any appropriate combination, sub-portfolio, scope or subrange wherein.
In one embodiment, coating chamber 101 comprises the closed boundary 103 extended around coating zone 105.Closed boundary 103 is or comprises metallic substance (such as, stainless steel or steel), metal-containing material, pottery or their combination, and limits coating zone 105 also for goods are provided in the region of coating in coating chamber 101.In one embodiment, closed boundary 103 comprises multiple surperficial 113, such as equidimension or the not substantially smooth surface of equidimension, arcuate surface, irregular surface, component or their combination.Surface 113 is by being fixed to one another (such as with coating zone 105, linked by welding, mechanical connection and/or tackiness agent) and the sealing to coating zone 105 is provided, or fixed by one or more intermediate (not shown) such as packing ring.The surface 113 of any suitable quantity is included in closed boundary 103, such as, surface 113,113, at least ten two, surface, 113, at least ten one, surface, 113, at least ten, surface, 113, at least nine, surface, 113, at least eight, surface, 113, at least seven, surface, 113, at least six, surface, 113, at least five, surface, 113, at least four, surface, at least two 113, at least three, surfaces or any appropriate combination, sub-portfolio, scope or subrange wherein.In one embodiment, one or more surperficial 113 be described goods, multiple described goods, for keeping the stationary installation of described one or more goods or multiple described stationary installation to provide quiescent centre or stable region.In one embodiment, surface 113 forms 12 prisms, and this and the shape shown in Fig. 3 are similar.
Closed boundary 103 and be positioned at coating chamber 101 and coating chamber 101 closed boundary 103 outside radiant heater element 109 hot tie-in.In one embodiment, thermal steering hood 121 shields extraneous reception heat and/or is inwardly guided towards coating chamber 101 by heat, such as, enter coating chamber 101 so that heat is directed across closed boundary 103 from radiant heater element 109.Radiant heater element 109 is positioned at the distally on surface 113 or is delivered to surface at permission heat and 113 then enters within the scope of the nearside in coating chamber 101, with closed boundary 103 physical contact.The heat being delivered to coating chamber 101 from radiant heater element 109 allows heating zone 300 (such as Fig. 3 those) to keep being less than a fixed difference difference.
Such as, as shown in Figure 3, heating zone 300 comprises radial zone 313 (radial section along coating zone 105 extends) and axial heating zone 316 (extending axially through coating zone 105).It will be appreciated by those skilled in the art that in radiant heater element 109 each affect heating zone 300 in coating zone 105 by different way.Radiant heater element 109 comprises one or more well heater (such as separately, the well heater 119 that the well heater 115 of passage portion nearside location, the well heater 117 of interfix and passage portion distally are located), they are other well heaters that resistance heater maybe can provide radiant heat (and/or can produce the heat of non-convection heat).In one embodiment, well heater is not printed wiring well heater and/or can not produces convection heat.
Well heater be smooth, substantially smooth, coiling, (such as, axially or radially the separating) that separate, there is any other suitable configuration or their combination, to keep heat distribution.The temperature in coating zone 105 is kept: the radiant heater element 109 of any suitable quantity being less than the described temperature difference and/or well heater can be kept (such as by following heating unit and/or well heater, at least three independent well heaters, at least four independent well heaters, at least six independent well heaters, at least two radiant heater elements 109, at least three radiant heater elements 109, at least four radiant heater elements 109, at least six radiant heater elements 109, at least nine radiant heater elements 109, at least ten two radiant heater elements 109, or its any suitable combination or sub-portfolio).Such as, be in the embodiment of 12 prisms at coating zone 105,12 radiant heater elements 109 are partially located around coating zone 105, wherein each radiant heater element 109 comprises three well heaters, i.e. the well heater 119 of the well heater 115 of passage portion nearside location, the well heater 117 of interfix and location, passage portion distally.
To the well heater 115 of the passage portion nearside location in radiant heater element 109 and/or radiant heater element 109, the well heater 117 of interfix, the adjustment of one or more the temperature in the well heater 119 of location, passage portion distally, allow radial zone 315 such as the first radial zone 315, in second radial zone 317 and the 3rd radial zone 319, temperature keeps being less than the described temperature difference, wherein the first radial zone 315 is positioned at the nearside of passage portion 107, 3rd radial zone 319 is positioned at the distally of passage portion, and the second radial zone 317 is positioned between the first radial zone 315 and the 3rd radial zone 319.
Similarly, to the well heater 115 of the passage portion nearside location in radiant heater element 109 and/or radiant heater element 109, the well heater 117 of interfix, the adjustment of one or more the temperature in the well heater 119 of location, passage portion distally, such as the first axial area 301 is (such as to allow axial heating zone 316, roughly corresponding with 1 o'clock of clock), second axial area 302 (such as, roughly corresponding with 2 o'clock of clock), 3rd axial area 303 (such as, roughly corresponding with 3 o'clock of clock), four-axial district 304 (such as, roughly corresponding with 4 o'clock of clock), 5th axial area 305 (such as, roughly corresponding with 5 o'clock of clock), 6th axial area 306 (such as, roughly corresponding with 6 o'clock of clock), 7th axial area 307 (such as, roughly corresponding with 7 o'clock of clock), 8th axial area 308 (such as, roughly corresponding with 8 o'clock of clock), 9th axial area 309 (such as, roughly corresponding with 9 o'clock of clock), tenth axial area 310 (such as, roughly corresponding with 10 o'clock of clock), 11 axial area 311 (such as, roughly corresponding with 11 o'clock of clock), 12 axial area 312 (such as, roughly corresponding with 12 o'clock of clock) interior temperature keeps being less than the described temperature difference.
In one embodiment, the temperature difference during chemical gaseous phase depositing process is be less than 50 DEG C, be less than 40 DEG C, be less than 30 DEG C, be less than 20 DEG C, be less than 10 DEG C, any appropriate combination, sub-portfolio, scope or subrange between 10 DEG C and 50 DEG C, between 10 DEG C and 30 DEG C, between 10 DEG C and 20 DEG C, between 20 DEG C and 50 DEG C, between 20 DEG C and 30 DEG C, between 30 DEG C and 50 DEG C or wherein.Occasionally the temperature difference is monitored in response to thermal measurement device 135 such as thermoelectricity and/or regulate, described thermal measurement device 135 is positioned in chemical gas-phase deposition system 100, such as outside coating chamber 101 but with surperficial 113 thermo-contacts (as shown in Figure 1), at radiant heater element 109 nearside, in coating chamber 101, or can provide in any other region with the complete of the temperature correlation in coating chamber 101 or substantially complete data.In one embodiment, thermocouple junction hop controller 137 such as programmable logic controller and/or temperature regulator operate, to realize each side of chemical gaseous phase depositing process disclosed herein.
See Fig. 2, fluid drawing-in system 201 comprises any suitable feature on the coating zone 105 of the coating chamber 101 for chemical vapour deposition fluid (not shown) being applied to chemical gas-phase deposition system 100.Fluid drawing-in system 201 comprises vacuum pump 203 and fluid introducing device 205, and described fluid drawing-in system 201 is arranged and is arranged to introduce chemical vapour deposition fluid and covers to carry out chemical vapour phase deposition coating to goods in coating chamber 101.Chemical vapour deposition fluid comprises one or more materials being assigned to fluid drawing-in system 201 from manifold 207.Other suitable components of fluid drawing-in system 201 include but not limited to one or more inlet flow rate valve 209, inlet flow paths 211, flow divider valve 213 (such as, in manifold 207), assignment of traffic path 215 (such as, in manifold 207), one or more waste streams 217 (such as, extending from coating chamber 101) or stabilization structure 219.In one embodiment, flow divider valve 213 has 10 -6the specified vacuum of holder, comprising synthesis fluoropolymer seal part, comprising ball valve, operate when there is particle, or their combination.In one embodiment, assignment of traffic path 215 comprises transverter, the transverter such as sealed airtightly and corrosion resistant transverter.
In one embodiment, being arranged at least partially of fluid drawing-in system 201 operates together with a more than chemical gas-phase deposition system 100, such as, and sequential operation or simultaneously operate.Such as, see Fig. 4, in one embodiment, multiple chemical gas-phase deposition system 100 comprises first chemical gas-phase deposition system 401 with the first coating chamber 403 and second chemical gas-phase deposition system 405 with the second coating chamber 407.In this embodiment, fluid drawing-in system 201 be arranged at least partially operate together with the second chemical gas-phase deposition system 405 with the first chemical gas-phase deposition system 401.First coating chamber 403 and the second coating chamber 407 separate.
In another embodiment, fluid drawing-in system 201 be arranged to operate together with a more than chemical gas-phase deposition system 100 except all parts of one or more inlet flow rate valve 209 except one or more inlet flow paths 211.In one embodiment, chemical vapour deposition fluid is only incorporated into chemical gas-phase deposition system 100 by fluid introducing device 205.In another embodiment, chemical vapour deposition fluid is incorporated into three, four, five, six, seven, eight or more chemical gas-phase deposition systems 101 by fluid drawing-in system 201.Can similarly for other suitable components of the fluid drawing-in system 201 operating one or more chemical gas-phase deposition system 100 include but not limited to one or more vacuum pump 203, one or more manifold 207, one or more flow divider valve 213, one or more assignment of traffic path 215, one or more waste streams 217 (such as, exhaust-valve), one or more stabilization structure 219 or can with a more than chemical gas-phase deposition system 100 order or any other suitable components simultaneously operated.
The part shared in chemical gas-phase deposition system 100 is corresponding with any suitable operating characteristics.Suitable operating characteristics includes but not limited to working pressure scope (such as, separate confinement based on above-mentioned), operating temperature range (such as, separate confinement based on above-mentioned), operation flow rates (such as, separate confinement based on above-mentioned), array of fluid (such as, pyrophoric gas or nonflammable gas), reaction profile (such as, if the first gas and the second gas will react each other, then they are separated), one group of chemical substance (as based on valency identify), flow out refuse processing requirements (such as, based on whether being volatile organic compounds, based on whether can reclaim and/or based on whether not adding process to dispose) or their combination.
Although be described the present invention in conjunction with one or more embodiment, it will be understood by those of skill in the art that and can make a variety of changes without departing from the present invention and can replace element wherein with Equivalent.In addition, instruction content according to the present invention multiple amendment can be made to adapt to concrete situation or material when not departing from base region of the present invention.Therefore, intention is not that the present invention is limited to as implementing specific embodiment disclosed in optimum way of the present invention, but the present invention will comprise all embodiments fallen within the scope of appended claims.In addition, all numerical value pointed out in embodiment all should be interpreted as explicitly pointed out exact value the same with approximation.

Claims (20)

1. a device for chemical gas-phase deposition system, comprising:
Comprise the first chemical gas-phase deposition system of the first coating chamber;
Comprise the second chemical gas-phase deposition system of the second coating chamber; And
Comprise the fluid drawing-in system of vacuum pump and fluid introducing device, the one or both that described fluid drawing-in system is arranged and is arranged to be introduced by fluid in described first coating chamber and described second coating chamber is covered to carry out chemical vapour phase deposition coating;
Being arranged at least partially of wherein said fluid drawing-in system operates together with described second chemical gas-phase deposition system with described first chemical gas-phase deposition system.
2. device according to claim 1, wherein said first chemical gas-phase deposition system and described second chemical gas-phase deposition system are heat chemical gas-phase deposition systems in batches.
3. device according to claim 1, wherein operates described first chemical gas-phase deposition system and is less than with the energy that described second chemical gas-phase deposition system uses the energy operating separately two identical chemical gas-phase deposition systems and use.
4. device according to claim 1, wherein operates described first chemical gas-phase deposition system and is less than with the fluid that described second chemical gas-phase deposition system uses the fluid operating separately two identical chemical gas-phase deposition systems and use.
5. device according to claim 1, wherein operates described first chemical gas-phase deposition system and is less than with the heat that described second chemical gas-phase deposition system uses the heat operating separately two identical chemical gas-phase deposition systems and use.
6. device according to claim 1, wherein said first coating chamber and described second coating chamber are fixing and level.
7. device according to claim 1, wherein said second chemical gas-phase deposition system is arranged to and receives effluent from described first chemical gas-phase deposition system.
8. device according to claim 1, wherein said first chemical gas-phase deposition system and described second chemical gas-phase deposition system are arranged to merging effluent.
9. device according to claim 1, wherein said first coating chamber has and is greater than 3,000cm 3volume.
10. device according to claim 1, wherein said first coating chamber is symmetrical or substantial symmetry along at least one plane.
11. devices according to claim 1, wherein said first coating chamber comprises the closed boundary with at least three substantially smooth surfaces.
12. devices according to claim 11, wherein said closed boundary is by 12 substantially smooth surface compositions.
13. devices according to claim 11, wherein said at least three substantially smooth surfaces and at least three radiant heater element thermo-contacts.
14. devices according to claim 13, wherein each described radiant heater element comprise be oriented to heat the first area of described closed boundary primary heater, be oriented to the secondary heater that the second area of described closed boundary is heated and the 3rd well heater being oriented to the 3rd region heating to described closed boundary, wherein said first area is positioned at the nearside of described passage portion, described 3rd zone location is in the distally of described passage portion, and described second area is positioned between described first area and described 3rd region.
15. devices according to claim 13, wherein each described radiant heater element comprises resistance heater.
16. 1 kinds of chemical gaseous phase depositing process, comprising:
The first chemical gas-phase deposition system comprising the first coating chamber is provided;
There is provided fluid drawing-in system, described fluid drawing-in system is arranged and is arranged to fluid to be introduced described first coating chamber; And
The second chemical gas-phase deposition system making to comprise the second coating chamber and described fluid drawing-in system at least partially together with operate.
17. 1 kinds of chemical gas-phase deposition systems, comprising:
Have the non-rectangular parallelepiped coating chamber of closed boundary, described closed boundary extends around the coating zone with at least three flat surfaces, and adjacent passage portion, described passage portion is located with the axial orientation relative to described at least three flat surfaces;
Fluid drawing-in system, described fluid drawing-in system comprises vacuum pump and fluid introducing device, and is arranged and is arranged to fluid to be introduced described non-rectangular parallelepiped coating chamber and cover to carry out chemical vapour phase deposition coating to goods in described non-rectangular parallelepiped coating chamber; And
The device of radiant heater element, the device of described radiant heater element to be positioned at outside described non-rectangular parallelepiped coating chamber and with the described closed boundary of described non-rectangular parallelepiped coating chamber to the heating zone hot tie-in in described non-rectangular parallelepiped coating chamber.
18. chemical gas-phase deposition systems according to claim 17, also comprise thermal steering hood, and described thermal steering hood is around radiant heater element and be arranged and be arranged to be guided from described radiant heater element by heat to enter described first coating chamber.
19. chemical gas-phase deposition systems according to claim 17, wherein said first coating chamber does not have well heater, reverberator, water-cooled element and heat dissipation element.
20. chemical gas-phase deposition systems according to claim 17, wherein said fluid introducing device comprises the one or more valves for introducing described fluid.
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