CN105356857B - Electricity with generalized chebyshev response turns down bandpass filter - Google Patents

Electricity with generalized chebyshev response turns down bandpass filter Download PDF

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Publication number
CN105356857B
CN105356857B CN201510718122.9A CN201510718122A CN105356857B CN 105356857 B CN105356857 B CN 105356857B CN 201510718122 A CN201510718122 A CN 201510718122A CN 105356857 B CN105356857 B CN 105356857B
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inductor wire
line
varactor
patch capacitor
biasing resistor
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CN201510718122.9A
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CN105356857A (en
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程飞
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Dfine Technology Co Ltd
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Dfine Technology Co Ltd
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Abstract

The problem of present invention is that the electricity with generalized chebyshev response turns down bandpass filter, solves existing low pass filter cutoff frequency and fixes, and selectivity is not high.Substrate includes upper strata metal (1) from top to bottom,Medium (2),Metal ground (3),Substrate has the first plated-through hole (111) for running through substrate up and down,Second metallization is logical (112),3rd plated-through hole (113),The first varactor (121) is welded with the metal of upper strata,Second varactor (122),3rd varactor (123),First patch capacitor (131),Second patch capacitor (132),3rd patch capacitor (133),First biasing resistor (141),Second biasing resistor (142),3rd biasing resistor (143),Upper strata metal has the first input and output feeder line (151),Second input and output feeder line (152),First inductor wire (161),Second inductor wire (162),3rd inductor wire (163),First offset line (171),Second offset line (172),3rd offset line (173),First input and output feeder line (151) is 50 ohm of microstrip line,Its right end is connected with the left end of the first inductor wire (161).

Description

Electricity with generalized chebyshev response turns down bandpass filter
Technical field:
The invention belongs to the electricity in microwave and millimeter wave device arts, more particularly to microwave and millimeter wave device to adjust low pass filtered Ripple device.
Background technology:
The broadband general purpose receiver of high integration can be widely used in mobile communication, civil aviation, space flight, maritime affairs are led to Letter, scientific investigation are reconnoitred etc..Wave filter is the Primary Component of receiver front end, had in usual receiver substantial amounts of wave filter and Switch composition frequency preselection unit.This mode adds system complexity, increases loss and the volume of system.Adjustable filtering Device may be substituted for these wave filter groups, so as to simplify receiver structure.
Tunable filter is generally divided to two kinds, and one kind is mechanical tuning, and one kind is that electricity is adjusted.Mechanical tuning is needed using electricity Machine controls, therefore tuned speed is slow.In addition, the wave filter volume of mechanical tuning is larger, it is more heavy.And load two pole of transfiguration The electrically tunable filter of pipe, using planar structure, is easily integrated, and size is small, and tuned speed is fast, meets that Modern Communication System is small-sized Change, integrated requirement.
Receiver usually requires that wave filter has good selectivity, and the existing wave filter with Chebyshev's response is cut Only frequency is fixed, and selectivity is not high.
The content of the invention:
Light-weight the purpose of the present invention is to propose to a kind of small, integration degree is high, and cost is low, the tool of high selectivity There is the tunable low pass filter that generalized chebyshev responds.
What the present invention was realized in:
Substrate includes upper strata metal 1 from top to bottom, medium 2, metal 3, substrate has the first gold medal for running through substrate up and down Categoryization through hole 111, the second plated-through hole 112, the 3rd plated-through hole 113, is welded with two pole of the first transfiguration on upper strata metal 1 Pipe 121, the second varactor 122, the 3rd varactor 123, the first patch capacitor 131, the second patch capacitor 132, Three patch capacitors 133, the first biasing resistor 141, the second biasing resistor 142, the 3rd biasing resistor 143, upper strata metal 1 have first Input and output feeder line 151, the second input and output feeder line 152, the first inductor wire 161, the second inductor wire 162, the 3rd inductor wire 163, the first offset line 171, the second offset line 172, the 3rd offset line 173.
Further, the first input and output feeder line 151 is 50 ohm of microstrip line, its right end and the first inductor wire 161 Left end is connected, and the first inductor wire 161 is thin microstrip line, and the width of the first input and output feeder line 151 is gradually transitions and the first electricity It is wide to feel line 161, the second input and output feeder line 152 is 50 ohm of microstrip line, the right end phase of its left end and the second inductor wire 162 Even, the second inductor wire 162 is thin microstrip line, and the width of the second input and output feeder line 152 is gradually transitions and the second inductor wire 162 Wide, the first inductor wire 161 is equal with 162 length and width of the second inductor wire, the right end of the first inductor wire 161 and the second electricity The left end of sense line 162 is connected, and the 3rd inductor wire 163 is thin microstrip line, the upper end and the first inductor wire 161, the second inductor wire 162 It is connected at the same time.
Further, the upper end of the first patch capacitor 131 is welded on the left end of the first inductor wire 161, the first patch capacitor 131 lower end welds together with the cathode of the first varactor 121, one end of the first biasing resistor 141, the first transfiguration two The anode of pole pipe 121 welds together with the first plated-through hole 111, and the other end of the first biasing resistor 141 is welded to first On offset line 171, the upper end of the second patch capacitor 132 is welded on the left end of the second inductor wire 162, the second patch capacitor 132 Lower end and cathode, the second biasing resistor 142 of the second varactor 122 weld together, the sun of the second varactor 122 Pole welds together with the second plated-through hole 112, and the other end of the second biasing resistor 142 is welded on the second offset line 172, The upper end and the lower end of the 3rd inductor wire 163 of 3rd patch capacitor 133 are welded together, the lower end of the 3rd patch capacitor 133 with The cathode of 3rd varactor 123, one end of the 3rd biasing resistor 143 are welded together, the sun of the 3rd varactor 123 Pole welds together with the 3rd plated-through hole 113, and the other end of the 3rd biasing resistor 143 is welded on the 3rd offset line 173.
The principle of technical scheme is:In Fig. 2, signal is flowed into and out by input and output feeder line, and inductor wire can To be equivalent to inductance, and patch capacitor and the structure of varactor series connection are used for the tunable capacitor in equivalence filter.Use The purpose of patch capacitor is to separate AC signal and direct current signal.The wave filter of the structure can realize that generalized chebyshev is rung Should, i.e., band is outer has transmission zero generation, compared to common wave filter, is selectively improved.When being added on offset line Bias voltage when changing, thus it is possible to vary the equivalent capacitance value of varactor, changes filter cutoff frequency so as to reach Purpose.It is very convenient and the frequency of transmission zero is controlled by middle varactor.The effect of biasing resistor is to allow DC voltage is added on varactor, while ensures that AC signal will not be leaked on voltage source by isolation resistance.
Electricity proposed by the present invention turns down bandpass filter, is responded as a result of generalized chebyshev, therefore has outside in band Transmission zero, improves the selectivity of wave filter.
The advantages of the present invention:
(1)The cutoff frequency that electricity in the present invention turns down bandpass filter can change with bias voltage, have real-time Adjustability, dynamic meet the needs of different operating environment.
(2)The tuned cell of the present invention is varactor, and technology maturation, is easily obtained, and cost is relatively low, opposite and YIG For wave filter, tuned speed is fast, and loss is small.
(3)Electricity in the present invention turns down bandpass filter and employs generalized chebyshev response, close to the transmission zero of passband The selectivity of wave filter can be improved.
(4)The present invention uses planar structure, can meet the requirement produced in enormous quantities, small, light-weight, integration degree It is high.
Brief description of the drawings:
Fig. 1 is the front view of the present invention.
Fig. 2 is the circuit structure diagram of the present invention.
Fig. 3 is the reflectance factor test curve figure of the present invention.
Fig. 4 is the transmission coefficient test curve figure of the present invention.
Embodiment:
Electricity with generalized chebyshev response turns down bandpass filter, and substrate includes upper strata metal 1 from top to bottom, medium 2, metal 3, run through the plated-through hole 111 of substrate, plated-through hole 112, plated-through hole 113, and on substrate up and down The varactor 121 just welded, varactor 122, varactor 123, patch capacitor 131, patch capacitor 132, patch Chip capacitor 133, biasing resistor 141, biasing resistor 142, biasing resistor 143;Upper strata metal 1 includes input and output feeder line 151, defeated Enter output feeder 152, inductor wire 161, inductor wire 162, inductor wire 163, offset line 171, offset line 172, offset line 173.
Input and output feeder line 151 is 50 ohm of microstrip line, its right end is connected with the left end of inductor wire 161, inductor wire 161 For thin microstrip line, the width of input and output feeder line 151 is gradually transitions wide with inductor wire 161;Input and output feeder line 152 is 50 The microstrip line of ohm, its left end is connected with the right end of inductor wire 162, and inductor wire 162 is thin microstrip line, input and output feeder line 152 Width be gradually transitions it is wide with inductor wire 162;Inductor wire 161 is equal with 162 length and width of inductor wire, inductor wire 161 right end is connected with the left end of inductor wire 162;Inductor wire 163 is thin microstrip line, the upper end and inductor wire 161, inductor wire 162 are connected at the same time.
The upper end of patch capacitor 131 is welded on the left end of inductor wire 161, the lower end of patch capacitor 131 and varactor 121 cathode and biasing resistor 141 welds together, and anode and the plated-through hole 111 of varactor 121 are welded on one Rise, the other end of biasing resistor 141 is welded on offset line 171;The upper end of patch capacitor 132 is welded on a left side for inductor wire 162 End, the lower end of patch capacitor 132 weld together with the cathode of varactor 122 and biasing resistor 142, varactor 122 anode welds together with plated-through hole 112, and the other end of biasing resistor 142 is welded on offset line 172;Patch The upper end of capacitance 133 and the lower end of inductor wire 163 are welded together, the lower end of patch capacitor 133 and the moon of varactor 123 Pole and biasing resistor 143 are welded together, and anode and the plated-through hole 113 of varactor 3 123 weld together, partially The other end for putting resistance 143 is welded on offset line 173.
Substrate uses domestic F4B dielectric substrates, relative dielectric constant 2.65, substrate thickness 0.8mm.Test result is such as Shown in Fig. 3 and Fig. 4, when bias voltage changes, the adjustable extent of the cutoff frequency of the low-pass filter is that 1.613GHz is arrived 2.218GHz, return loss is consistently greater than 10dB in whole adjustable extent, and the overall dimensions of circuit are 32.2mm × 26mm.

Claims (1)

1. the electricity with generalized chebyshev response turns down bandpass filter, it is characterised in that substrate includes upper strata gold from top to bottom Belong to (1), medium (2), metal ground (3), substrate has the first plated-through hole (111) for running through substrate up and down, and the second metallization is logical Hole (112), the 3rd plated-through hole (113), is welded with the first varactor (121), two pole of the second transfiguration on the metal of upper strata Manage (122), the 3rd varactor (123), the first patch capacitor (131), the second patch capacitor (132), the 3rd patch capacitor (133), the first biasing resistor (141), the second biasing resistor (142), the 3rd biasing resistor (143), upper strata metal have first defeated Enter output feeder (151), the second input and output feeder line (152), the first inductor wire (161), the second inductor wire (162), the 3rd electricity Feel line (163), the first offset line (171), the second offset line (172), the 3rd offset line (173), the first input and output feeder line (151) microstrip line for being 50 ohm, its right end are connected with the left end of the first inductor wire (161), and the first inductor wire is thin microstrip line, The width of first input and output feeder line (151) is gradually transitions, second input and output feeder line wide with the first inductor wire (161) (152) microstrip line for being 50 ohm, its left end are connected with the right end of the second inductor wire (162), and the second inductor wire (162) is trickle Band line, the width of the second input and output feeder line (152) are gradually transitions, first inductor wire wide with the second inductor wire (162) (161) it is equal with the second inductor wire (162) length and width, the right end and the second inductor wire (162) of the first inductor wire (161) Left end be connected, the 3rd inductor wire (163) is thin microstrip line, the upper end and the first inductor wire (161), the second inductor wire (162) It is connected at the same time, the upper end of the first patch capacitor (131) is welded on the left end of the first inductor wire (161), the first patch capacitor (131) Lower end weld together with the cathode of the first varactor (121), one end of the first biasing resistor (141), the first transfiguration The anode of diode (121) welds together with the first plated-through hole (111), the other end weldering of the first biasing resistor (141) It is connected on the first offset line (171), the upper end of the second patch capacitor (132) is welded on the left end of the second inductor wire (162), and second The lower end of patch capacitor (132) and cathode, the second biasing resistor (142) of the second varactor (122) weld together, the The anode and the second plated-through hole of two varactors (122)(112)Weld together, the second biasing resistor(142)It is another One end is welded to the second offset line(172)On, the 3rd patch capacitor(153)Upper end and the 3rd inductor wire(163)Lower end weldering It is connected to together, the 3rd patch capacitor(133)Lower end and the 3rd varactor(123)Cathode, the 3rd biasing resistor(143) One end be welded together, the 3rd varactor(123)Anode and the 3rd plated-through hole(113)Weld together, the Three biasing resistors(143)The other end be welded to the 3rd offset line(173)On.
CN201510718122.9A 2015-10-30 2015-10-30 Electricity with generalized chebyshev response turns down bandpass filter Active CN105356857B (en)

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Publication number Priority date Publication date Assignee Title
CN105826641A (en) * 2016-03-24 2016-08-03 成都九洲迪飞科技有限责任公司 High selectivity band-pass adjustable filter

Citations (4)

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Publication number Priority date Publication date Assignee Title
CN104241749A (en) * 2014-09-16 2014-12-24 电子科技大学 Microstrip filter with controllable transmission zeros
CN204067532U (en) * 2014-09-16 2014-12-31 电子科技大学 A kind of double frequency band-pass filter based on defect microstrip line
CN204375894U (en) * 2015-01-15 2015-06-03 华南理工大学 A kind of restructural double-frequency bandpass filtering device
CN104795614A (en) * 2015-04-07 2015-07-22 上海大学 Broad-stopband electrically-tunable dual-frequency band-pass filter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241749A (en) * 2014-09-16 2014-12-24 电子科技大学 Microstrip filter with controllable transmission zeros
CN204067532U (en) * 2014-09-16 2014-12-31 电子科技大学 A kind of double frequency band-pass filter based on defect microstrip line
CN204375894U (en) * 2015-01-15 2015-06-03 华南理工大学 A kind of restructural double-frequency bandpass filtering device
CN104795614A (en) * 2015-04-07 2015-07-22 上海大学 Broad-stopband electrically-tunable dual-frequency band-pass filter

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A Dual-Mode Substrate Integrated Waveguide Filter With Controllable Transmission Zeros;Cheng F 等;《IEEE Microwave & Wireless Components Letters》;20150930;全文 *
Tunable bandpass filter using varactor-loaded quarter-wavelength resonator;Cheng F 等;《nternational Conference on Microwave and Millimeter Wave Technology.IEEE》;20120508;全文 *
Tunable Bandpass Filter With Two Adjustable Transmission Poles and Compensable Coupling;Luo X 等;《IEEE Transactions on Microwave Theory & Techniques》;20140930;全文 *
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