CN105337145B - Solid-state terahertz emission device based on edge tones effect - Google Patents
Solid-state terahertz emission device based on edge tones effect Download PDFInfo
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- CN105337145B CN105337145B CN201510615325.5A CN201510615325A CN105337145B CN 105337145 B CN105337145 B CN 105337145B CN 201510615325 A CN201510615325 A CN 201510615325A CN 105337145 B CN105337145 B CN 105337145B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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Abstract
The invention discloses a kind of solid-state terahertz emission device based on edge tones effect, including dielectric substrate layers, the semiconductor conducting layer that is arranged on dielectric substrate layer surface, the insulating protective layer for being arranged on semiconductor conducting layer surface, insulation cutting, input electrode and the output electrode for penetrating semiconductor conducting layer.The insulation cutting includes the first insulation cutting, the second insulation cutting and third insulation cutting；The first insulation cutting and the second insulation cutting are oppositely arranged, and gap therebetween forms a low conducting channel；Described third insulation cutting one end is cusped edge structure, and low conducting channel described in the cusped edge face is far from input electrode one end open；The third insulation cutting other end extends to one end margin of semiconductor conducting layer；Described first insulation cutting one end and second insulation cutting one end extend to semiconductor conducting layer both side surface.The radiator structure is simple, is easily integrated, and can work in Terahertz frequency range at normal temperatures.
Description
Technical field
The present invention relates to a kind of solid-state terahertz emission device based on edge tones effect more particularly to it is a kind of utilize edge tones
Effect (edge tone effect) causes unstability so as to excite high frequency radiation, and can work in Terahertz at normal temperatures
The radiator of frequency range.
Background technology
Terahertz (1THz=1012Hz it) radiates, is commonly referred to as electromagnetic wave of the frequency in 100GHz to 10THz, it is corresponded to
Wave-length coverage at 3mm to 30 μm, between microwave and infrared waves, recently since the progress of nanometer technology causes Terahertz to grind
Study carefully and be applied in more areas, Terahertz Technology due to its be capable of the characteristic of non-destructive testing be widely used in mechanics of communication,
Biological spectrum, remote detection dangerous goods, food quality control and the manipulation for carrying out quantum state in the semiconductors.In order to excite
This THz wave needs corresponding radiation source, and the obstruction that Terahertz Technology progress is subject to is mainly compact due to lacking, low
Power consumption, solid-state terahertz emission source.
With the sustainable development of semiconductor technology, the characteristic size of device constantly reduces, from micron dimension always till now
Nanometer scale；And also from traditional high latitude (three-dimensional) to low-dimensional, (two dimension, standard are one-dimensional for corresponding material system structure used
With it is one-dimensional) transformation.The device general technology of Low Dimensional Semiconductor Structures is simple, is easily integrated, therefore be considered as high-frequency element
Ideal chose.
Although edge tones effect behavior is sufficiently complex, can be realized by very simple structure.In fact, stream
Oscillation body excitation edge tones effect is seen everywhere.In daily life, we can often hear that wind blowed the wind sent out during trees
The music of whistle, pipe flute musical instrument, these phenomenons all occur in the case where no solid components vibrates.Their voiced process
Active mechanism be exactly edge tones.When high-velocity fluid is punished in sharp arris into two strands, formation two arranges the vortex detached up and down, by
In airflow obstruction, different location flow velocity changes, and the big local pressure of flow velocity is small, and the small local pressure of flow velocity is big, produces
Pressure difference.Upper and lower two row are vortexed since attracting each other occurs in suction effect and collides so that fluid is shaken with specific frequency
Swing --- sounding.Edge tones is the phenomenon that a kind of fluid is shared, but edge tones effect will generate different frequencies in different fluid
The oscillation of section.Study (M.Dyakonov and M.Shur, " Shallow water analogy for a ballistic
field effect transistor:New mechanism of plasma wave generation by DC
Current " Phys.Rev.Lett.71,2465 (1993)) show characteristic of the electronics in nanostructured with fluid, therefore
Also there is edge tones effect.Such edge tones effect can cause charge density distribution in nanostructured that hyperfrequency oscillation occurs, because
This can be used for design terahertz emission device.
Invention content
The purpose of the present invention is exactly overcome the deficiencies in the prior art, is exactly that edge tones effect is introduced nano electron device
Field provides a kind of solid-state terahertz emission device based on completely new working mechanism, compact-sized and low in energy consumption.
In order to achieve the above object, it adopts the following technical scheme that：
A kind of solid-state terahertz emission device based on edge tones effect, including dielectric substrate layers, is arranged on dielectric substrate layers
The semiconductor conducting layer on surface, the insulating protective layer for being arranged on semiconductor conducting layer surface, the insulation for penetrating semiconductor conducting layer
Cutting, input electrode and output electrode.The input electrode is arranged on semiconductor conducting layer one end outer surface, the output electrode
It is arranged on two side external surface of semiconductor conducting layer；The semiconductor conducting layer is two-dimensional semiconductor conductive layer；The insulation cutting
Including the first insulation cutting, the second insulation cutting and third insulation cutting；The first insulation cutting and the second insulation cutting phase
To setting, and gap therebetween forms a low conducting channel；The third insulate cutting one end for cusped edge structure, and the point
Low conducting channel is far from input electrode one end open described in rib face；The third insulation cutting other end, which extends to, described partly leads
One end margin of body conductive layer；Described first insulation cutting one end and second insulation cutting one end extend to semiconductor conducting layer both sides
Surface.
Preferably, the width ratio of the width of the low conducting channel and semiconductor conducting layer is 1/50~1/10.
Preferably, the distance of the low conducting channel outlet and third insulation cutting tip is 100~500nm.It is logical
The setting is crossed, makes the distance at the low conducting channel outlet and third insulation cutting tip in hundred nanometer scales, it is ensured that
The direct current gone out from low conducting channel conducts, which leaves, to be insulated cutting point by edge tones effect in third behind the outlet of low conducting channel
End generation unstability is preferable so as to be converted into the effect of exchange, and can be realized in technique.
Further, the first insulation cutting is identical with the second insulation groove dimensions and is symmetrical arranged；The third is exhausted
Edge cutting is triangle, and low conducting channel described in one apex angle face is far from input electrode one end open, a line
With described semiconductor conducting layer one end coincident.Third insulation cutting is set as triangle, and make described first absolutely
Edge cutting is identical with the second insulation groove dimensions and is symmetrical arranged, then the apex angle of low conducting channel described in its face forms the third
The tip of insulation cutting, electric current generate edge tones effect after from the low conducting channel under the action of points, can not only
The current waveform of output is made to stablize the most, and the cutting of triangular structure also more irregular quarter with cusped edge in technique
Slot is more easily implemented.Preferably, third insulation cutting is set as isosceles triangle shape, then the alignment of its apex angle is described low leads
Electric raceway groove forms tip far from input electrode one end open, and carrier is not only excited to generate the best results of edge tones effect, and
And the structure of isosceles triangle is also more convenient for realizing in cutting technique.
Preferably, the third insulation cutting apex angle is 15 °~120 °.Third insulation cutting point in the angular range
End, can better ensure that the generation of edge tones effect and preferable electric current output effect, technique are also relatively easy to implement.
Further, the output electrode is located at third insulation cutting institute including being relatively arranged on semiconductor conducting layer
The first output electrode and the second output electrode of two side external surfaces in region.The input signal of direct current from the input electrode into
Enter, and pass through the semiconductor conducting layer, in the action of points of third insulation cutting after by the low conducting channel
Lower generation edge tones effect is converted to high-frequency alternating current, and is exported from the first output electrode and the second output electrode.
Preferably, the semiconductor conducting layer is III compound semiconductor, and the dielectric substrate layers are undoped
Levy semiconductor.The semiconductor conducting layer is two-dimensional semiconductor conductive layer, is preferably III compound semiconductor, such as arsenic
Gallium, gallium nitride etc..The dielectric substrate layers are preferably undoped intrinsic semiconductor, such as silicon, indium phosphide or blue precious
The insulating materials such as stone, silica.The insulating protective layer plays the role of protecting two-dimensional semiconductor conductive layer and insulation, and selection is led
The high insulating materials of heating rate.
Further, the semiconductor conducting layer be AlGaN/GaN hetero-junctions, including AlGaN layer, GaN layer and
Two-dimensional electron gas-bearing formation is formed between AlGaN layer and GaN layer.Due to AlGaN layer from GaN layer with different band gap, convenient for two
The Two-dimensional electron gas-bearing formation formed between person, edge tones effect are betided in the Two-dimensional electron gas-bearing formation.
Preferably, the semiconductor conducting layer be AlGaAs/GaAs hetero-junctions, including AlGaAs layers, GaAs layers and
The δ doped regions that Two-dimensional electron gas-bearing formation is formed between AlGaAs layers and GaAs layers of the setting at GaAs layers.Due to AlGaAs layers with
GaAs layers have different band gap, GaAs layers are introduced with δ doped regions so as to obtain Two-dimensional electron gas-bearing formation, edge tones effect betides
In the Two-dimensional electron gas-bearing formation.
Compared with prior art, the beneficial effects of the present invention are：
1st, the present invention devises a kind of structure and very simply, using the sufficiently complex edge tones effect of behavior causes not
Stability is so as to excite the radiator of high frequency radiation.The design can be realized easily on low-dimensional materials, advantageously account for lacking
The present situation in weary solid-state terahertz emission source.The solid-state terahertz emission device based on edge tones effect is simple in structure, technique is easy
It realizes, be easily integrated.
2nd, the work of solid-state terahertz emission device energy room temperature and working frequency that should be based on edge tones effect be high, proper by selecting
When material can work in Terahertz frequency range at normal temperatures.
Description of the drawings
Fig. 1 is the schematic surface of the solid-state terahertz emission device described in embodiment；
Fig. 2 is the vertical structure schematic diagram of the solid-state terahertz emission device described in embodiment；
Fig. 3 is an output electrode output current characteristic figure of the solid-state terahertz emission device obtained by MHD modelings；
Fig. 4 is the output signal frequency distribution map of solid-state terahertz emission device obtained by MHD modelings；
Fig. 5 is the Dc bias of the solid-state terahertz emission device obtained by MHD modelings and output signal crest frequency
Between relational graph.
It is indicated in figure：
1-dielectric substrate layers；11-the first insulation cutting；12-the second insulation cutting；The insulation cutting of 13-third；
2-two-dimensional semiconductor conductive layer；21-AlGaAs layers；22-GaAs layers；23-Two-dimensional electron gas-bearing formation；221-δ mixes
Miscellaneous area；24-the first highly conductive area；25-low conducting channel；26 second highly conductive areas；
3-insulating protective layer；
41-input electrode；42-the first output electrode；43-the second output electrode.
Specific embodiment
Come that the present invention will be described in detail below in conjunction with attached drawing and specific implementation method, the present invention it is schematic implement and
Illustrate for explaining the present invention, but not as a limitation of the invention.
Please refer to Fig. 1 and Fig. 2, wherein, Fig. 1 is the surface signal of the solid-state terahertz emission device described in the present embodiment
Figure, Fig. 2 are the vertical structure schematic diagram of the solid-state terahertz emission device described in the present embodiment.Described in the present embodiment based on arris
The solid-state terahertz emission device that audio is answered from vertical structure, includes dielectric substrate layers 1, is arranged on absolutely successively from the bottom up
The two-dimensional semiconductor conductive layer 2 of edge substrate layer surface, the insulating protective layer 3 for being arranged on 2 surface of two-dimensional semiconductor conductive layer.Absolutely
Edge substrate layer 1 can be undoped intrinsic semiconductor, such as silicon, indium phosphide；Can also be the insulation materials such as sapphire, silica
Material.Two-dimensional semiconductor conductive layer 2 can be III compound semiconductor, such as GaAs, gallium nitride.Insulating protective layer 3 plays
The effect of two-dimensional semiconductor layer and insulation is protected, the insulating materials for selecting thermal conductivity high.
Further, the two-dimensional semiconductor conductive layer 2 can be AlGaN/GaN hetero-junctions, including AlGaN layer, GaN
Layer and the formation Two-dimensional electron gas-bearing formation between AlGaN layer and GaN layer；Since AlGaN layer and GaN layer have different band gap,
GAN has self poling effect, can form Two-dimensional electron gas-bearing formation 23 therebetween, edge tones effect betides the Two-dimensional electron gas-bearing formation
In 23.In the present embodiment, the two-dimensional semiconductor conductive layer 2 be AlGaAs/GaAs hetero-junctions, including AlGaAs layers 21,
GaAs layers 22 and the δ that Two-dimensional electron gas-bearing formation 23 is formed between AlGaAs layers 21 and GaAs layers 22 set in GaAs layers 22
Doped region 221.
Insulating protective layer 3 is omitted in Fig. 1, it is possible thereby to see that the first insulation for penetrating semiconductor conducting layer and being formed is carved
The insulation of slot 11, second cutting 12, third insulation cutting 13, and the figure further comprises the input electrode 41, first being omitted in Fig. 2
42 and second output electrode 43 of output electrode.The input electrode 41 is arranged on 2 one end outer surface of two-dimensional semiconductor conductive layer, institute
It states the first output electrode 42 and the second output electrode 43 is relatively arranged on semiconductor conducting layer 2 and is located at third insulation cutting 13
On two side external surface of region, and gap therebetween forms a low conducting channel 25；Third insulation cutting 13 is
Triangle, and low 25 one end open of conducting channel described in one apex angle face, a line are conductive with the two-dimensional semiconductor
2 one end coincident of layer；Described first insulation 11 one end of cutting and second 12 one end of insulation cutting extend to two-dimensional semiconductor and lead
2 both side surface of electric layer.
The principle that is utilized of the present invention is：The Dc bias loaded by electrode falls the overwhelming majority in low conducting channel 25
For accelerating carrier, the cusped edge of 13 one end of third insulation cutting is arranged on low the opening far from input electrode 21 of conducting channel 25
Near mouthful, for stopping the high speed carrier beam exported by low conducting channel 25.Solid-state terahertz emission device of the present invention
During work, in 41 input dc power of input electrode, input signal is inputted from input electrode 41, respectively by the first highly conductive area
24th, low 25 and second highly conductive area 26 of conducting channel, and formed after low conducting channel 25 is left in third insulation cutting 13
Edge tones effect occurs at the cusped edge of low 25 one end open of conducting channel of face, so as to generate unstability, DC conversion is
High-frequency alternating current, and exported from the first output electrode 42 and the second output electrode 43.The process is intuitively similar to inverter or friendship
Current source is flowed, the high-frequency current generated can be used for microwave system so as to generate terahertz emission.
Further, in order to smoothly excite the generation of edge tones effect, the width of the low conducting channel 25 is much smaller than institute
State the width of two-dimensional semiconductor conductive layer 2.Preferably, the width of the low conducting channel 25 and two-dimensional semiconductor conductive layer 2
Width ratio is 1/50~1/10, and the restriction in the range of the width ratio can be such that the radiator device is easily achieved in technique productions,
And the electric signal effect of output is preferable.
Further, in order to ensure to leave from the direct current that low conducting channel 25 transfers out, low conducting channel 25 is separate to input electricity
13 tip of cutting generation unstability is insulated so as to be converted into exchange in third by edge tones effect after the opening of 41 one end of pole
Effect it is preferable, the low conducting channel 25 far from 41 one end open of input electrode and third insulation cutting 13 tip away from
From for 100~500nm.By the setting, the distance of the low conducting channel outlet and third insulation cutting tip is made to exist
Hundred nanometer scales not only ensure that electric current conversion effect, and can be realized in technique.
Preferably, in the present embodiment, the first insulation cutting 11 and the second insulation 12 size of cutting are identical and symmetrical
Setting, the third insulate cutting 13 for isosceles triangle shape, and low conducting channel one end open described in its apex angle face, bottom
Side and 2 one end coincident of two-dimensional semiconductor conductive layer.Make the first insulation cutting 11 and the second insulation 12 size phase of cutting
It together and is symmetrical arranged, while third insulation cutting 13 is set as isosceles triangle, then the cutting 13 so that third insulate
Apex angle forms the tip of third insulation cutting 13, and electric current under the action of points generates side from the low conducting channel after
Rib audio should, the current waveform of output can not only be made to stablize the most, and the cutting of isosceles triangular structure in technique also compared with
Sealene triangle cutting is more easily implemented.
Preferably, 13 apex angle of the third insulation cutting is 15 °~120 °.Third insulation cutting point in the angular range
End, can better ensure that the generation of edge tones effect and preferable electric current output effect, technique are also relatively easy to implement.
First insulation cutting 11, second insulation cutting 12 of the present invention and third insulation cutting 13 can be by two
It ties up and is obtained on semiconductor conducting layer 2 using dry etch process, the depth of cutting is can penetrate two-dimensional semiconductor conductive layer 2
Most shallow depth requirements.
Fig. 3~Fig. 5 is please referred to, wherein, Fig. 3 is the output of solid-state terahertz emission device obtained by MHD modelings
Electrode output current characteristic figure；Fig. 4 is the output signal frequency distribution of the solid-state terahertz emission device obtained by MHD modelings
Figure；Fig. 5 is between the Dc bias of solid-state terahertz emission device and output signal crest frequency obtained by MHD modelings
Relational graph.The structure for having following feature is employed using semiconductor conducting layer during MHD modelings：The length of low conducting channel 25
For 150nm, width 15nm, distance is 100nm at the third insulation cutting cusped edge that low conducting channel 25 is 30 ° with apex angle.
The frequency of oscillation that output current is understood by waveform observation shown in Fig. 3 is about 1THz；Therefore, which generates
High-frequency current can be used for microwave system so as to generate terahertz emission.
Fig. 4 is the power spectral density that the flow field that records is obtained with frequency by Fast Fourier Transform after device simulation
Figure, reflects the distribution of device frequency of oscillation.As seen in Figure 4：The main frequency of output current is distributed in 1THz or so.
Other peak values are since edge tones " stage " (English is " stages ") generates.
Fig. 5 reflects the relationship between device Dc bias and output signal crest frequency, due to being flowed in highly conductive region
The presence of resistance, device input electrode institute making alive are flowed for electronics is made to overcome interior flow resistance power, so as to
Impact insulation cusped edge generates unstability excitation high frequency radiation.
In the present embodiment, third insulation cutting 13 isosceles triangle shape ideal for effect, apex angle forms point
End is so as to the generation that cusped edge audio is excited to answer.It should be noted that：It is only most preferred embodiment herein, in the technology for implementing the present invention
During scheme, other shapes also can be used in third insulation cutting, and the one end for only needing low conducting channel 25 described in its face is tip
.
Compared with the prior art, the present invention devises that a kind of structure is very simple, utilizes the sufficiently complex arris of behavior
Audio should cause unstability so as to excite the radiator of high frequency radiation.The design can be easily real on low-dimensional materials
It is existing, advantageously account for the present situation for lacking solid-state terahertz emission source.The solid-state terahertz emission device knot based on edge tones effect
Structure is simple, technique is easy to implement, is easily integrated, can room temperature work and working frequency it is high, by selecting appropriate material can be
Terahertz frequency range is worked under room temperature.
The technical solution provided above the embodiment of the present invention is described in detail, specific case used herein
The principle and embodiment of the embodiment of the present invention are expounded, the explanation of above example is only applicable to help to understand this
The principle of inventive embodiments；Meanwhile for those of ordinary skill in the art, embodiment according to the present invention, in specific embodiment party
There will be changes in formula and application range, in conclusion the content of the present specification should not be construed as limiting the invention.
Claims (9)
1. a kind of solid-state terahertz emission device based on edge tones effect, including dielectric substrate layers, is arranged on dielectric substrate layers table
The semiconductor conducting layer in face, the insulating protective layer for being arranged on semiconductor conducting layer surface, the insulation quarter for penetrating semiconductor conducting layer
Slot, input electrode and output electrode；It is characterized in that：The input electrode is arranged on semiconductor conducting layer one end outer surface, institute
It states output electrode and is arranged on two side external surface of semiconductor conducting layer；The semiconductor conducting layer is two-dimensional semiconductor conductive layer；Institute
It states insulation cutting and includes the first insulation cutting, the second insulation cutting and third insulation cutting；The first insulation cutting and second
Insulation cutting is oppositely arranged, and gap therebetween forms a low conducting channel；Described third insulation cutting one end is cusped edge
Structure, and low conducting channel described in the cusped edge face is far from input electrode one end open；The third insulation cutting other end prolongs
Extend to one end margin of semiconductor conducting layer；Described first insulation cutting one end and second insulation cutting one end extend to and partly lead
Body conductive layer both side surface.
2. the solid-state terahertz emission device according to claim 1 based on edge tones effect, it is characterised in that：It is described low to lead
The width of electric raceway groove and the width ratio of semiconductor conducting layer are 1/50~1/10.
3. the solid-state terahertz emission device according to claim 1 based on edge tones effect, it is characterised in that：It is described low to lead
Distance of the electric raceway groove far from input electrode one end open and third insulation cutting tip is 100~500nm.
4. the solid-state terahertz emission device according to claim 1 based on edge tones effect, it is characterised in that：Described first
Insulation cutting is identical with the second insulation groove dimensions and is symmetrical arranged；The third insulation cutting is triangle, and one
Low conducting channel described in apex angle face is far from input electrode one end open, a line and one end margin of semiconductor conducting layer
It overlaps.
5. the solid-state terahertz emission device according to claim 4 based on edge tones effect, it is characterised in that：The third
The apex angle of low conducting channel described in the cutting face that insulate is 15 °~120 °.
6. the solid-state terahertz emission device according to claim 1 based on edge tones effect, it is characterised in that：The output
Electrode, which includes being relatively arranged on semiconductor conducting layer and is located at the third, to insulate the first defeated of two side external surface of cutting region
Go out electrode and the second output electrode.
7. according to solid-state terahertz emission device of the Claims 1 to 5 any one of them based on edge tones effect, feature exists
In：The semiconductor conducting layer is III compound semiconductor, and the dielectric substrate layers are undoped intrinsic semiconductor.
8. according to solid-state terahertz emission device of the Claims 1 to 5 any one of them based on edge tones effect, feature exists
In：The semiconductor conducting layer is AlGaN/GaN hetero-junctions, including AlGaN layer, GaN layer and in AlGaN layer and GaN layer
Between formed Two-dimensional electron gas-bearing formation.
9. according to solid-state terahertz emission device of the Claims 1 to 5 any one of them based on edge tones effect, feature exists
In：The semiconductor conducting layer is AlGaAs/GaAs hetero-junctions, including AlGaAs layers, GaAs layers and in GaAs layers of setting
Between AlGaAs layers and GaAs layers formed Two-dimensional electron gas-bearing formation δ doped regions.
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| WO2004023611A1 (en) * | 2002-09-04 | 2004-03-18 | Teraview Limited | Coherent thz emitter with dc power reducing resistor |
| WO2008109706A1 (en) * | 2007-03-05 | 2008-09-12 | University Of Virginia Patent Foundation | Method of local electro-magnetic field enhancement of terahertz (thz) radiation in sub wavelength regions and improved coupling of radiation to materials through the use of the discontinuity edge effect |
| CN103219944A (en) * | 2013-04-23 | 2013-07-24 | 华南师范大学 | Frequency multiplier based on lower dimension semiconductor structure |
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2015
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004023611A1 (en) * | 2002-09-04 | 2004-03-18 | Teraview Limited | Coherent thz emitter with dc power reducing resistor |
| WO2008109706A1 (en) * | 2007-03-05 | 2008-09-12 | University Of Virginia Patent Foundation | Method of local electro-magnetic field enhancement of terahertz (thz) radiation in sub wavelength regions and improved coupling of radiation to materials through the use of the discontinuity edge effect |
| CN103219944A (en) * | 2013-04-23 | 2013-07-24 | 华南师范大学 | Frequency multiplier based on lower dimension semiconductor structure |
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