CN105336853A - Electrical bistable device based on polyethylene oxide and poly(3-hexylthiophene) and preparation method thereof - Google Patents
Electrical bistable device based on polyethylene oxide and poly(3-hexylthiophene) and preparation method thereof Download PDFInfo
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- CN105336853A CN105336853A CN201510627162.2A CN201510627162A CN105336853A CN 105336853 A CN105336853 A CN 105336853A CN 201510627162 A CN201510627162 A CN 201510627162A CN 105336853 A CN105336853 A CN 105336853A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/50—Bistable switching devices
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
Abstract
The invention relates to an electrical bistable device based on polyethylene oxide and poly(3-hexylthiophene) and a preparation method thereof. Each of the three different structures of electrical bistable devices is composed of a substrate, a functional layer and an electrode layer. The functional layer of the first structure of device is a blending monolayer formed by PEO and P3HT, and the maximum switch ratio of the device can be 1032; the functional layer of the second structure of device is a double layer formed by a P3HT layer and a PEO layer, wherein the P3HT layer is close to the substrate, the PEO layer is close to the electrode layer, and the maximum switch ratio of the device can be 104; and the functional layer of the third structure of device is a double layer formed by the PEO layer and the P3HT layer, wherein the PEO layer is close to the substrate, the P3HT layer is close to the electrode layer, and the maximum switch ratio of the device can be 104. According to the electrical bistable device and the preparation method thereof, the preparation technology is simple, cost is low, flexibility is great, the structure is variable, the device size is small and the device is light and thin and convenient.
Description
Technical field
The present invention relates to organic optoelectronic technical field, is a kind of dual stabilization part based on poly(ethylene oxide) (PEO) and poly-3-hexyl thiophene (P3HT) and preparation method thereof specifically.
Background technology
Electric bi-stable is the fundamental characteristics of semiconductor memory component, and its principal phenomena is: device there will be two kinds of different conduction states under identical applied voltage.Specifically, when applying voltage on device function layer film both sides, along with the change of voltage, the conduction state of device also changes thereupon.When applied voltage is removed, the conduction state occurring to change can keep for a long time.And applying reverse voltage can make again the conduction state of device reduce, difference the is corresponding write of memory element, reading and erase process.
In recent years, along with information technology is to low carbonization, low cost, portable, high power capacity and respond future development fast, be that the memory technology of medium reaches Development limitation gradually with inorganic semiconductor, and as memory element prepared by functional layer, there is the advantages such as cost is low, technique is simple, pliability is good, structure is changeable, device size is little based on organic material, thus become the memory having application prospect, regain the concern of academia, and achieve and develop rapidly.Meanwhile, thin polymer film is prepared simply and effect stability due to it, obtains everybody extensive concern.Utilize the physicochemical characteristics of different polymer, annealed process, make device have charge storage, dual stabilization part of good performance can be produced, have good application prospect in organic field of storage.
Summary of the invention
For the defect existed in prior art, the object of the present invention is to provide a kind of dual stabilization part based on poly(ethylene oxide) and poly-3-hexyl thiophene and preparation method thereof, preparation technology is simple, cost is low, pliability is good, structure is changeable, device size is little, frivolous convenience.
For reaching above object, the technical scheme that the present invention takes is:
Based on a dual stabilization part for poly(ethylene oxide) and poly-3-hexyl thiophene, it is characterized in that, comprising: the substrate 1 set gradually from bottom to up, functional layer 2, electrode layer 3;
Described functional layer 2 is the blended individual layer be made up of PEO and P3HT,
Or described functional layer 2 is the bilayer of the upper and lower stacked composition of PEO layer and P3HT layer,
P3HT layer near substrate 1, PEO layer near electrode layer 3,
Or PEO layer near substrate 1, P3HT layer near electrode layer 3.
On the basis of technique scheme, described substrate 1 is the glass substrate with electric conducting material, and described electric conducting material is tin indium oxide.
On the basis of technique scheme, described electrode layer 3 is aluminium electrode layer.
On the basis of technique scheme, to be the preparation process of the blended individual layer be made up of PEO and P3HT be functional layer 2:
Step 1, weighs poly-3-hexyl thiophene P3HT, poly(ethylene oxide) PEO respectively and is placed in same brown vial, then add chlorobenzene solution in bottle;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve, obtain the blend solution of P3HT and PEO simultaneously;
Step 3, uses cleaning agent substrate 1 to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun on the blend solution of P3HT and the PEO of gained in substrate 1, then is placed in thermal station by the sample of gained and carries out annealing in process, forms functional layer 2;
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer 3.
On the basis of technique scheme, to be the preparation process of the bilayer of the upper and lower stacked composition of PEO layer and P3HT layer be functional layer 2:
Step 1, weighs poly-3-hexyl thiophene P3HT, poly(ethylene oxide) PEO respectively and is placed in a brown vial respectively, adding chlorobenzene solution, ethanolic solution respectively in two bottles;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve, obtain P3HT solution and PEO solution simultaneously;
Step 3, uses cleaning agent substrate 1 to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun on the P3HT solution of gained in substrate 1, then is placed in thermal station by the sample of gained and carries out annealing in process, forms the ground floor of functional layer;
Spin coating PEO solution on the sample of gained, is placed on the sample of gained in thermal station and carries out annealing in process, forms functional layer 2;
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer 3.
On the basis of technique scheme, to be the preparation process of the bilayer of the upper and lower stacked composition of P3HT layer and PEO layer be functional layer 2:
Step 1, weighs poly-3-hexyl thiophene P3HT, poly(ethylene oxide) PEO respectively and is placed in a brown vial respectively, adding chlorobenzene solution, ethanolic solution respectively in two bottles;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve simultaneously;
Step 3, uses cleaning agent substrate 1 to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun on the PEO solution of gained in substrate 1, then is placed in thermal station by the sample of gained and carries out annealing in process, forms the ground floor of functional layer;
Spin coating P3HT solution on the sample of gained, is placed on the sample of gained in thermal station and carries out annealing in process, forms functional layer 2;
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer 3.
Dual stabilization part based on poly(ethylene oxide) and poly-3-hexyl thiophene of the present invention and preparation method thereof, the functional layer material of device is all-polymer material: poly(ethylene oxide) and poly-3-hexyl thiophene, functional layer is only prepared from a kind of spin-coating method, it is simple that device has preparation technology, cost is low, pliability is good, structure is changeable, device size is little, the advantages such as frivolous convenience, wherein the company of poly-this product of 3-hexyl thiophene domestic production is more, technique is comparative maturity also, poly(ethylene oxide) is a kind of crystallinity, thermoplastic polymer, there is good water solubility, toxicity is low, the advantages such as easy machine-shaping.
Dual stabilization part based on poly(ethylene oxide) and poly-3-hexyl thiophene of the present invention and preparation method thereof, be divided into three kinds of structures: ITO/P3HT+PEO/Al, ITO/P3HT/PEO/Al, ITO/PEO/P3HT/Al, the on-off ratio of the dual stabilization part of these three kinds of structures reaches 10 respectively
3, 10
4, 10
4, there is good switching characteristic.
Accompanying drawing explanation
The present invention has following accompanying drawing:
Fig. 1 embodiments of the invention 1 structure chart;
Fig. 2 embodiments of the invention 2 structure chart;
Fig. 3 embodiments of the invention 3 structure chart;
The I-V curve chart of Fig. 4 embodiment of the present invention 1;
The I-V curve chart of Fig. 5 embodiment of the present invention 2;
The I-V curve chart of Fig. 6 embodiment of the present invention 3.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Dual stabilization part based on poly(ethylene oxide) (PEO) and poly-3-hexyl thiophene (P3HT) of the present invention, comprising: the substrate 1 set gradually from bottom to up, functional layer 2, electrode layer 3;
Described functional layer 2 is the blended individual layer be made up of PEO and P3HT, see Fig. 1,
Or described functional layer 2 is the bilayer of the upper and lower stacked composition of PEO layer and P3HT layer, see Fig. 2, P3HT layer near substrate 1, PEO layer near electrode layer 3,
Or described functional layer 2 is the bilayer of the upper and lower stacked composition of P3HT layer and PEO layer, see Fig. 3, PEO layer near substrate 1, P3HT layer near electrode layer 3.
On the basis of technique scheme, described substrate 1 is the glass substrate with electric conducting material, and described electric conducting material is tin indium oxide (ITO).
On the basis of technique scheme, described electrode layer 3 is aluminium electrode layer.
On the basis of technique scheme, to be the preparation process of the blended individual layer be made up of PEO and P3HT be functional layer 2:
Step 1, gathers 3-hexyl thiophene P3HT, 36mg poly(ethylene oxide) PEO for 1:8 weighs 4mg respectively and is placed in same brown vial in mass ratio, then in bottle, adding 1ml chlorobenzene solution;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve simultaneously, through being greater than heating, the stirring of 12h, obtains the blend solution of P3HT and PEO;
Step 3, uses ITO cleaning agent substrate 1 to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun on the blend solution of P3HT and the PEO of gained in substrate 1, and the spin coating rotating speed of sol evenning machine is 6000rps, spin-coating time is 60s, then is placed in thermal station by the sample of gained and carries out annealing in process, and annealing temperature is 70 DEG C, annealing time is 2h, forms functional layer 2;
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer 3, obtain the dual stabilization part of the first structure, the speed of evaporation is 1
the thickness of electrode layer 3 is 100nm.
As can be seen from the I-V curve of Fig. 4 embodiment of the present invention 1, there is obvious hysteresis phenomenon in the characteristic curve of the dual stabilization part of the first structure, has maximum on-off ratio to reach 10 when voltage is 7v
3.When applying reverse biased to device, namely Al electrode connects positive pole, and device is in low conductive state; Apply forward bias to device subsequently, in the voltage range of 0-8v, device keeps low conduction state always; Until threshold voltage arrives, device current increases rapidly, and device is high connductivity state by low conductive state, is equivalent to the process of a write; When the bias voltage applied drops to 0v from 15v, device maintains high connductivity state, is equivalent to a process stored; Subsequently, when again applying a reverse biased to device, device reverts to low conduction state, is equivalent to the process of an erasing.
On the basis of technique scheme, to be the preparation process of the bilayer of the upper and lower stacked composition of PEO layer and P3HT layer be functional layer 2:
Step 1, gathers 3-hexyl thiophene P3HT, 15mg poly(ethylene oxide) PEO for 2:5 weighs 6mg respectively and is placed in a brown vial respectively in mass ratio, adding 1ml chlorobenzene solution respectively, 1ml ethanolic solution in two bottles;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve simultaneously, through being greater than heating, the stirring of 12h, obtains P3HT solution and PEO solution;
Step 3, uses ITO cleaning agent substrate 1 to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun in substrate 1 by the P3HT solution of gained, and spin coating rotating speed is 5000rps, and spin-coating time is 60s, then is placed in thermal station by the sample of gained and carries out annealing in process, and annealing temperature is 135 DEG C, and annealing time is 20min, forms the ground floor of functional layer;
Spin coating PEO solution on the sample of gained, spin coating rotating speed is 5000rps, and spin-coating time is 60s, is placed on by the sample of gained in thermal station and carries out annealing in process, and annealing temperature is 135 DEG C, and annealing time is 20min, forms functional layer 2;
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer 3, obtain the dual stabilization part of the second structure, the speed of evaporation is 1
the thickness of electrode layer 3 is 100nm.
As can be seen from the I-V curve of Fig. 5 embodiment of the present invention 2, there is obvious hysteresis phenomenon in the characteristic curve of the dual stabilization part of the second structure, has maximum on-off ratio to reach 10 at voltage for during-1v
4.When applying reverse biased to device, namely Al electrode connects positive pole, and device is in low conductive state; Apply forward bias to device subsequently, in the voltage range of 0-6v, device keeps low conduction state always; Until threshold voltage arrives, device current increases rapidly, and device is high connductivity state by low conductive state, is equivalent to the process of a write; When the bias voltage applied drops to-11v from 11v, device maintains high connductivity state, is equivalent to a process stored; Subsequently, device reverts to low conduction state, is equivalent to the process of an erasing.
On the basis of technique scheme, to be the preparation process of the bilayer of the upper and lower stacked composition of P3HT layer and PEO layer be functional layer 2:
Step 1, gathers 3-hexyl thiophene P3HT, 15mg poly(ethylene oxide) PEO for 2:5 weighs 6mg respectively and is placed in a brown vial respectively in mass ratio, adding 1ml chlorobenzene solution respectively, 1ml ethanolic solution in two bottles;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve simultaneously, through being greater than heating, the stirring of 12h, obtains P3HT solution and PEO solution;
Step 3, uses ITO cleaning agent substrate 1 to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun in substrate 1 by the PEO solution of gained, and spin coating rotating speed is 5000rps, and spin-coating time is 60s, then is placed in thermal station by the sample of gained and carries out annealing in process, and annealing temperature is 135 DEG C, and annealing time is 20min, forms the ground floor of functional layer;
Spin coating P3HT solution on the sample of gained, spin coating rotating speed is 5000rps, and spin-coating time is 60s, is placed on by the sample of gained in thermal station and carries out annealing in process, and fiery temperature is 135 DEG C, and annealing time is 20min, forms functional layer 2;
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer 3, obtain the dual stabilization part of the third structure, the speed of evaporation is 1
the thickness of electrode layer 3 is 100nm.
As can be seen from the I-V curve of Fig. 6 embodiment of the present invention 3, there is obvious hysteresis phenomenon in the characteristic curve of the dual stabilization part of the third structure, has maximum on-off ratio to reach 10 at voltage for during-1v
4.When applying reverse biased to device, namely Al electrode connects positive pole, and device is in low conductive state; Apply forward bias to device subsequently, in the voltage range of 0-9v, device keeps low conduction state always; Until threshold voltage arrives, device current increases rapidly, and device is high connductivity state by low conductive state, is equivalent to the process of a write; When the bias voltage applied drops to-11v from 11v, device maintains high connductivity state, is equivalent to a process stored; Subsequently, device reverts to low conduction state, is equivalent to the process of an erasing.
Dual stabilization part based on poly(ethylene oxide) (PEO) and poly-3-hexyl thiophene (P3HT) of the present invention, functional layer material selects all-polymer material: poly(ethylene oxide) and poly-3-hexyl thiophene, compared to inorganic material, the advantages such as organic polymer material has, frivolous convenience, with low cost, preparation technology is simple, pliability is good, wherein the company of poly-this product of 3-hexyl thiophene domestic production is more, technique is comparative maturity also, poly(ethylene oxide) is a kind of crystallinity, thermoplastic polymer, has the advantages such as good water solubility, toxicity are low, easy machine-shaping; In dual stabilization part based on poly(ethylene oxide) and poly-3-hexyl thiophene of the present invention and preparation method thereof, functional layer only adopts spin-coating method to be prepared from, and preparation technology is simple; The maximum on-off ratio of the first prepared structure I TO/P3HT+PEO/Al device is 10
3; The maximum on-off ratio of prepared the second structure I TO/P3HT/PEO/Al device reaches 10
4; The maximum on-off ratio of the third prepared structure I TO/PEO/P3HT/Al device also reaches 10
4, device has good switching characteristic.
The content be not described in detail in this specification belongs to the known prior art of professional and technical personnel in the field.
Claims (6)
1., based on a dual stabilization part for poly(ethylene oxide) and poly-3-hexyl thiophene, it is characterized in that, comprising: the substrate (1) set gradually from bottom to up, functional layer (2), electrode layer (3);
Described functional layer (2) is the blended individual layer be made up of PEO and P3HT,
Or the bilayer that described functional layer (2) is PEO layer and the upper and lower stacked composition of P3HT layer,
P3HT layer near substrate (1), PEO layer near electrode layer (3),
Or PEO layer is near substrate (1), P3HT layer is near electrode layer (3).
2., as claimed in claim 1 based on the dual stabilization part of poly(ethylene oxide) and poly-3-hexyl thiophene, it is characterized in that: described substrate (1) be the glass substrate having electric conducting material, and described electric conducting material is tin indium oxide.
3., as claimed in claim 1 based on the dual stabilization part of poly(ethylene oxide) and poly-3-hexyl thiophene, it is characterized in that: described electrode layer (3) is aluminium electrode layer.
4. as claimed in claim 1 based on the dual stabilization part of poly(ethylene oxide) and poly-3-hexyl thiophene, it is characterized in that: to be the preparation process of the blended individual layer be made up of PEO and P3HT be functional layer (2):
Step 1, weighs poly-3-hexyl thiophene P3HT, poly(ethylene oxide) PEO respectively and is placed in same brown vial, then add chlorobenzene solution in bottle;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve, obtain the blend solution of P3HT and PEO simultaneously;
Step 3, uses cleaning agent substrate (1) to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun on the blend solution of P3HT and the PEO of gained in substrate (1), then is placed in thermal station by the sample of gained and carries out annealing in process, forms functional layer (2);
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer (3).
5. as claimed in claim 1 based on the dual stabilization part of poly(ethylene oxide) and poly-3-hexyl thiophene, it is characterized in that: the preparation process of the bilayer that functional layer (2) is PEO layer and the upper and lower stacked composition of P3HT layer is:
Step 1, weighs poly-3-hexyl thiophene P3HT, poly(ethylene oxide) PEO respectively and is placed in a brown vial respectively, adding chlorobenzene solution, ethanolic solution respectively in two bottles;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve, obtain P3HT solution and PEO solution simultaneously;
Step 3, uses cleaning agent substrate (1) to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun on the P3HT solution of gained in substrate (1), then is placed in thermal station by the sample of gained and carries out annealing in process, forms the ground floor of functional layer;
Spin coating PEO solution on the sample of gained, is placed on the sample of gained in thermal station and carries out annealing in process, forms functional layer (2);
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer (3).
6. as claimed in claim 1 based on the dual stabilization part of poly(ethylene oxide) and poly-3-hexyl thiophene, it is characterized in that: the preparation process of the bilayer that functional layer (2) is P3HT layer and the upper and lower stacked composition of PEO layer is:
Step 1, weighs poly-3-hexyl thiophene P3HT, poly(ethylene oxide) PEO respectively and is placed in a brown vial respectively, adding chlorobenzene solution, ethanolic solution respectively in two bottles;
Step 2, carries out 50 DEG C of heating by solution in bottle, magnetic agitation, makes it fully dissolve simultaneously;
Step 3, uses cleaning agent substrate (1) to be cleaned up, then it is inserted successively in deionized water, acetone and alcohol and soak, and each ultrasonic 30 minutes, after nitrogen fluidized drying, in UV ozone environment, process 15 minutes;
Step 4, is spun on the PEO solution of gained in substrate (1), then is placed in thermal station by the sample of gained and carries out annealing in process, forms the ground floor of functional layer;
Spin coating P3HT solution on the sample of gained, is placed on the sample of gained in thermal station and carries out annealing in process, forms functional layer (2);
10
-4under the vacuum environment of more than Pa vacuum degree by Al electrode material evaporation in functional layer, formed electrode layer (3).
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855501A (en) * | 2005-03-17 | 2006-11-01 | 三星电子株式会社 | Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material |
| CN102344546A (en) * | 2011-07-11 | 2012-02-08 | 南京邮电大学 | Electrical bistable material for conjugated polymer as well as preparation method and application thereof |
| CN103972389A (en) * | 2014-05-21 | 2014-08-06 | 北京交通大学 | Electrical bistable device based on conjugated polymer doping and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855501A (en) * | 2005-03-17 | 2006-11-01 | 三星电子株式会社 | Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material |
| CN102344546A (en) * | 2011-07-11 | 2012-02-08 | 南京邮电大学 | Electrical bistable material for conjugated polymer as well as preparation method and application thereof |
| CN103972389A (en) * | 2014-05-21 | 2014-08-06 | 北京交通大学 | Electrical bistable device based on conjugated polymer doping and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| KEUN KAB PARK等: "Memory effects and carrier transport mechanisms of write-once-read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate", 《APPLIED PHYSICS LETTERS》 * |
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