CN102569337B - Anti-crosstalk flexible transparent memory array and preparation method thereof - Google Patents
Anti-crosstalk flexible transparent memory array and preparation method thereof Download PDFInfo
- Publication number
- CN102569337B CN102569337B CN201210068383.7A CN201210068383A CN102569337B CN 102569337 B CN102569337 B CN 102569337B CN 201210068383 A CN201210068383 A CN 201210068383A CN 102569337 B CN102569337 B CN 102569337B
- Authority
- CN
- China
- Prior art keywords
- electrode
- transparent
- flexible
- layer
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses an anti-crosstalk flexible transparent memory array and a preparation method of the array. An organic diode is used as a drive pipe, the preparation technology is simple, the occupied area is small and the array is convenient to reduce with equal ratio. In the invention, flexible transparent material is adopted, thus the array has the intrinsic characteristic of a variable resistance memory, also has the advantages of being flexible and transparent, especially solves the problem of crosstalk in the integrated array of the memory; and the prepared memory array can be widely used in electronic paper, flexible transparent display and other related electronic systems. The organic material is used for replacing the traditional expensive heavy silicon and other inorganic materials and the memory array is a green environmental protection device adapted to the future development and also has the advantages of being light in weight and low in cost of the organic semiconductor material, and the device has a fully transparent structure and produced on a transparent device or article by a transparent encapsulation process and especially promotes the display technology of a new generation.
Description
Technical field
The present invention relates to flexible and transparent electronic system, be specifically related to flexible and transparent storage array of a kind of anti-crosstalk and preparation method thereof.
Background technology
In recent years, integrated circuit obtains swift and violent development, and its application is more and more extensive.Meanwhile electronic system also combines with increasing other type systematics, and then the more powerful function and efficacy of performance.Under this development trend, a kind of special Circuits System---flexible and transparent electronic system is arisen at the historic moment.Flexible and transparent electronic system has light transmission function in curling or flexible, therefore can cover and be arranged on arbitrary surface or moving-member, greatly expand the range of application of electronic system, especially have broad application prospects in fields such as flexible and transparent demonstrations, for example, there have been at present the electronic products such as flexible transparent mobile phone and flexible transparent plate computer to come out.
Diode and resistance-variable storing device are being played the part of separately very important role in integrated circuit, and its Recent Progresses In The Development is also very rapid.Resistance-variable storing device is the non-volatile type memories of a kind of new ideas, and the memory cell of resistance-variable storing device is generally metal/function film layer/metal three-decker, claims sandwich structure.Its general principle is, the resistance of material can be realized reversible transformation under the excitation of applied voltage or electric current between high-impedance state (" 0 " state) and low resistance state (one state), thereby realizes the function of data storage (deposit " 0 " or deposit " 1 ").Compare with traditional flash, resistance-variable storing device has structure and the advantage such as preparation technology is simple, speed is fast, operating voltage is low.Meanwhile, resistance-variable storing device, due to simple cellular construction, can adopt cross array structure to be prepared into storage array.This cross array structure technique is simple, density is high and have good Scaling ability, has embodied and has prepared multiple-layer overlapped crossed array and three-dimensional integrated potentiality.If but the storage array of preparation is applied directly in circuit, can cause integrated circuit normally to work with leakage current problem because existing to crosstalk.Taking the integrated array of the memory of 2x2 as example, when one in four adjacent memories be that high resistant and other three are while being low resistive state, in the time reading the resistance of high-impedance state, electric current is no longer by the memory of this high resistant, but by the memory of three low-resistances around, form current channel, misread thereby cause, Here it is crosstalk phenomenon, as shown in Figure 1.In fact, crosstalking not is to only occur on the memory of this high resistant adjacent with the memory of three low-resistances, and this current channel that the memory of three low-resistances forms also has impact to other high-impedance state around.For improving the reliability of circuit, be necessary to introduce on storage array diode as driving tube to solve cross-interference issue.In circuit, diode plays a part to select and isolation, and in the time of storage operation to high resistant, diode is opened, and has so just selected the memory of action required; In the time of storage operation to low-resistance, diode is closed, and avoids misoperation to unit around and generation to read and crosstalks, and plays isolation, thereby has effectively suppressed the cross-interference issue in the integrated array of memory.Adopting the minimum unit area of diode and resistance-variable storing device Integrated Solution is 4F
2, and can 3D integrated, therefore storage density can be done very highly.Thereby effectively solve the cross-interference issue in integrated array.
In recent years, there is article to report the diode of preparation in flexible substrate, silica-based and glass substrate and the storage array of resistance-variable storing device.But because electrode film (great majority are metal) or the dielectric layer material of the diode using and resistive device are not transparent, so can not reach the effect of flexible and transparent.And there is expensive heaviness, unbending shortcoming in inorganic material.These deficiencies have all limited the range of application of storage array to a certain extent.
Summary of the invention
In order to overcome deficiency of the prior art, the invention provides a kind of flexible and transparent storage array that solves circuit cross-interference issue and preparation method thereof, to change application and the existing way of current device, make the flexible portable storage of anti-crosstalk become possibility.
One object of the present invention is to provide a kind of flexible and transparent storage array of anti-crosstalk.
Flexible and transparent storage array of the present invention comprises: the substrate of flexible and transparent; Be formed on the hearth electrode of m strip on substrate; Be formed on the PN junction on hearth electrode; Be formed on the electrode layer on PN junction; Hearth electrode and extraction electrode, PN junction and electrode layer form transparent diode; Be formed on the resistance-change memory layer on electrode layer; The top electrode of n the strip being formed on resistance-change memory layer and intersect with hearth electrode; The extraction electrode that penetrates resistance-change memory layer, electrode layer and PN junction and be connected with hearth electrode; Isolation side walls between extraction electrode and resistance-change memory layer and the sidewall of electrode layer; Electrode layer, resistance-change memory layer and top electrode form transparent resistance-variable storing device; Said structure all adopts the material of flexible and transparent, and the hearth electrode of m the strip part crossing with the top electrode of n strip forms the storage array of m*n, and wherein, m and n are natural number.
Diode and resistance-change memory layer common electrode layer, electrode layer is as the top electrode of diode, and the while is as the top electrode of resistance-variable storing device.
Substrate is the material of the flexible and transparents such as Parylene (Parylene), and as the one in plastics and the elastomeric material of polyimides PI film, polydimethylsiloxane film, polyethylene terephtalate film, PEN PEN film etc.
Diode is the organic diode of flexible and transparent, the material of hearth electrode is the one in the electric conducting material that the poly-ethylenedioxy thiophene PEDOT of Al-Doped ZnO ZAO, tin indium oxide ITO, graphene film and conducting polymer composite etc. is transparent, the material of PN junction adopts the poly-alkylthrophene of doping polyvinylcarbazole, can be also as 3-hexyl thiophene P3HT: the one in fullerene derivate PCBM mixed film, phthalocyanine dye class organic material.
Described resistance-variable storing device is the transparent organic resistive random access memory with bipolar switch function.
Electrode layer adopts the one in the electric conducting material that the poly-ethylenedioxy thiophene PEDOT of Al-Doped ZnO ZAO, tin indium oxide ITO, graphene film and conducting polymer composite etc. is transparent, the material of resistance-change memory layer is that parylene polymer is the one in Parylene C type, Parylene N-type and Parylene D shaped material, and the material of top electrode is the one in the electric conducting material that the poly-ethylenedioxy thiophene PEDOT of Al-Doped ZnO ZAO, tin indium oxide ITO, graphene film and conducting polymer composite etc. is transparent.
The material of the resistance-change memory layer of resistance-variable storing device adopts has the insulation of resistive characteristic, transparent organic material, and preparation process does not relate to high temperature, has therefore reduced energy consumption.
Diode of the present invention is the organic diode of flexible and transparent, and preparation technology is simple, and area occupied is little, facilitates scaled down.
Flexible and transparent storage array of the present invention " flexible and transparent electronic system ", " driving tube " and " resistance-variable storing device " triplicity together, it is except having the characteristic of resistance-variable storing device itself, also possess flexibility, the advantage such as transparent, especially solved the problem that memory is crosstalked in integrated array, the storage array of preparation can be widely used in electronic paper (e-paper), flexible and transparent for example shows, in (electronic display) and other associated electrical systems.
Another object of the present invention is the preparation method of the flexible and transparent storage array that a kind of anti-crosstalk is provided.
The preparation method of the flexible and transparent storage array of anti-crosstalk of the present invention comprises the following steps:
1) provide the substrate of an organic flexible and transparent;
2) at the conductive layer of Grown one deck flexible and transparent, photolithography patterning, forms the hearth electrode of m strip, and m is natural number;
3) the transparent organic thin film of growing on hearth electrode, forms PN junction;
4) the transparent conductive film of sputter thickness 100～300nm on PN junction, forms electrode layer;
5) apply one deck photoresist, photoetching is also etched to the upper surface of hearth electrode, forms through hole;
6) the resistive material of deposition thickness 30～60nm, forms resistance-change memory layer;
7) the part resistive material of chemical wet etching on hearth electrode, thus define the through hole of drawing of hearth electrode, meanwhile, form isolation side walls;
8) grow on the resistance-change memory layer conductive layer of flexible and transparent, photolithography patterning, forms the top electrode of n strip, forms the extraction electrode of hearth electrode simultaneously, and n is natural number.
Beneficial effect of the present invention:
1) organic material has replaced silicon and other inorganic material of traditional costliness heaviness, is the environmental protection device that adapts to future development;
2) except possessing inorganic device fundamental characteristics, also acted on organic semiconducting materials light weight, advantage that cost is low, and device is all-transparent structure, can be produced on transparent equipment or article by transparent packaging technology, especially can promote
A new generation's Display Technique;
3) in realizing the technological merit such as flexible, transparent, effectively solved the cross-interference issue in integrated array, made it more practical;
4) preparation process relates to high-temperature technology hardly, has reduced energy consumption, has saved preparation time, and has good compatibility with existing technique.
Brief description of the drawings
In the integrated array of existing memory, there is the schematic diagram of crosstalking in Fig. 1;
Fig. 2 is the profile of the embodiment of the flexible and transparent storage array of anti-crosstalk of the present invention;
Fig. 3 to Fig. 9 is the process chart of the flexible and transparent storage array preparation method's of anti-crosstalk of the present invention embodiment.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, further set forth the present invention.
Fig. 2 is the profile of the embodiment of the flexible and transparent storage array of a kind of anti-crosstalk provided by the present invention, and as shown in the figure, storage array comprises: the substrate 1 of flexible and transparent; Be formed on the hearth electrode 2 of m strip on substrate; Be formed on the PN junction 3 on hearth electrode; Be formed on the electrode layer 4 on PN junction; Be formed on the resistance-change memory layer 5 on electrode layer; The top electrode 6 of n the strip being formed on resistance-change memory layer and intersect with hearth electrode; The extraction electrode 7 that penetrates resistance-change memory layer, electrode layer and PN junction and be connected with hearth electrode; Isolation side walls 8 between extraction electrode and resistance-change memory layer and the sidewall of electrode layer; Said structure all adopts the material of flexible and transparent, and the hearth electrode of m the strip part crossing with the top electrode of n strip forms the storage array of m*n, and wherein, m and n are natural number.
The preparation method of an embodiment of the flexible and transparent storage array of anti-crosstalk disclosed in this invention is as follows:
1) substrate of polyimides PI is put into the NaOH aqueous solution foam washing ten minutes of 70 DEG C, then PI substrate is put into isopropyl alcohol organic solution, ultrasonic cleaning ten minutes, finally uses washed with de-ionized water, dries up, and prepares substrate 1, as Fig. 3 institute not;
2) utilize the film build method of rotary coating, the polyaniline film of the about 100nm thickness of one deck of growing on substrate 1, and adopt standard photolithography techniques to make conducting layer figure, form the hearth electrode 2 of 2 strips, as shown in Figure 4;
3) utilize rotating coating, chloroform is as solvent, and on hearth electrode 2, whirl coating film makes the poly-alkylthrophene film of doping polyvinylcarbazole, and the about 80nm of thickness forms PN junction 3;
4) utilize magnetically controlled sputter method, the transparent conductive film of sputter ZAO on PN junction 3, thickness is about 150nm, form electrode layer 4, thus, make taking polyaniline film as hearth electrode 2, the transparent diode taking the poly-alkylthrophene film of the polyvinylcarbazole that adulterates as PN junction 3 with taking the electrode layer 4 of ZAO as top electrode, as shown in Figure 5;
5) spin coating one deck photoresist, the upper surface that is etched to hearth electrode 2 after photolithography patterning stops, and removes photoresist and obtains through hole, as shown in Figure 6;
6) utilize polymer (Polymer) chemical vapour deposition (CVD) CVD (Chemical Vapor Deposition) technology, the resistive material of one deck Parylene C type (Parylene-C) of growing on electrode layer 4 is as resistance-change memory layer 5, thickness is about 40nm, as shown in Figure 7;
7) utilize photoetching technique, adopt lithographic method to remove the part resistive material of part on hearth electrode 2, thereby define the through hole of drawing of hearth electrode, meanwhile, protected Parylene film can form again isolation side walls 8, the wall of through hole is drawn in protection, in order to avoid hearth electrode contacts with intermediate layer pour into electric conducting material in through hole time, remove photoresist, as shown in Figure 8, not only as the active layer of device, and play the effect of self-isolation protection at this Parylene;
8) utilize the method for rotary coating on resistance-change memory layer 5, to be coated with layer/polyaniline conductive thin layer; the about 100nm of thickness; Coating glue protect, exposure, development; remove the part of unwanted polyaniline; remove photoresist and form top electrode 6; form extraction electrode 7 simultaneously hearth electrode is drawn, as shown in Figure 9.
Thereby the top electrode of two strips and the part that the hearth electrode of two strips intersects have formed organic flexible and transparent storage array of the 2*2 that diode and resistance-variable storing device form.
Finally it should be noted that: although this specification describes by specific embodiment the material that the present invention uses in detail; structure and preparation method thereof; but it should be appreciated by those skilled in the art; implementation of the present invention is not limited to the description scope of embodiment; not departing from essence of the present invention and spiritual scope; can carry out various amendments and replacement to the present invention, therefore protection scope of the present invention defines depending on claim scope.
Claims (7)
1. a flexible and transparent storage array, is characterized in that, described storage array comprises: the substrate (1) of flexible and transparent; Be formed on the hearth electrode (2) of m strip on substrate; Be formed on the PN junction (3) on hearth electrode; Be formed on the electrode layer (4) on PN junction; Be formed on the resistance-change memory layer (5) on electrode layer; The top electrode (6) of n the strip being formed on resistance-change memory layer and intersect with hearth electrode; Penetrate the extraction electrode (7) that resistance-change memory layer is connected with electrode layer and with hearth electrode; Isolation side walls (8) between extraction electrode and resistance-change memory layer and the sidewall of electrode layer; Described substrate, hearth electrode, PN junction, electrode layer, resistance-change memory layer, top electrode, extraction electrode and isolation side walls all adopt the material of flexible and transparent, the hearth electrode of m the strip part crossing with the top electrode of n strip forms the storage array of m*n, wherein, m and n are natural number; The material of described PN junction is 3-hexyl thiophene P3HT: fullerene derivate PCBM mixed film.
2. storage array as claimed in claim 1, it is characterized in that, described substrate is the material of the flexible and transparent of Parylene, and one in plastics and the elastomeric material of polyimides PI film, polydimethylsiloxane film, polyethylene terephtalate film, PEN PEN film.
3. storage array as claimed in claim 1, it is characterized in that, the material of described hearth electrode, electrode layer and top electrode is respectively the one in the transparent electric conducting material of the poly-ethylenedioxy thiophene PEDOT of Al-Doped ZnO ZAO, tin indium oxide ITO, graphene film and conducting polymer composite.
4. storage array as claimed in claim 1, is characterized in that, the material of described resistance-change memory layer is that parylene polymer is the one in Parylene C type, Parylene N-type and Parylene D shaped material.
5. the preparation method of a flexible and transparent storage array comprises the following steps:
1) provide the substrate of an organic flexible and transparent;
2) at the conductive layer of Grown one deck flexible and transparent, photolithography patterning, forms the hearth electrode of m strip, and m is natural number;
3) the transparent organic thin film of growing on hearth electrode, material is 3-hexyl thiophene P3HT: fullerene derivate PCBM mixed film, forms PN junction;
4) the transparent conductive film of sputter on PN junction, forms electrode layer;
5) apply one deck photoresist, photoetching is also etched to the upper surface of hearth electrode, forms through hole;
6) deposit resistive material, forms resistance-change memory layer;
7) the part resistive material of chemical wet etching on hearth electrode, thus define the through hole of drawing of hearth electrode, meanwhile, form isolation side walls;
8) grow on the resistance-change memory layer conductive layer of flexible and transparent, photolithography patterning, forms the top electrode of n strip, forms the extraction electrode of hearth electrode simultaneously, and n is natural number.
6. preparation method as claimed in claim 5, is characterized in that, in step 4) in, the thickness of described electrode layer is between 100～300nm.
7. preparation method as claimed in claim 5, is characterized in that, in step 6) in, the thickness of described resistance-change memory layer is between 30～60nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210068383.7A CN102569337B (en) | 2012-03-15 | 2012-03-15 | Anti-crosstalk flexible transparent memory array and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210068383.7A CN102569337B (en) | 2012-03-15 | 2012-03-15 | Anti-crosstalk flexible transparent memory array and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102569337A CN102569337A (en) | 2012-07-11 |
| CN102569337B true CN102569337B (en) | 2014-11-05 |
Family
ID=46414335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210068383.7A Expired - Fee Related CN102569337B (en) | 2012-03-15 | 2012-03-15 | Anti-crosstalk flexible transparent memory array and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102569337B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840240B (en) * | 2012-11-20 | 2020-03-17 | 深圳光启创新技术有限公司 | Resonant cavity, filter device and electromagnetic wave equipment |
| CN112582444B (en) * | 2020-12-14 | 2023-08-08 | 东南大学 | Three-terminal resistive random access memory capable of inhibiting crosstalk current and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181566C (en) * | 2001-06-29 | 2004-12-22 | 精碟科技股份有限公司 | Transparent electrode substrate, its preparing process and its organic LED (OLED) |
| CN100576557C (en) * | 2004-11-26 | 2009-12-30 | 株式会社半导体能源研究所 | Semiconductor device and manufacture method thereof |
| CN101478031A (en) * | 2009-01-19 | 2009-07-08 | 中国科学院物理研究所 | Transparent resistor type non-volatile memory |
| CN101630719B (en) * | 2009-07-24 | 2011-01-26 | 北京大学 | Resistive random access memory and manufacturing method thereof |
| KR101361658B1 (en) * | 2009-12-04 | 2014-02-21 | 한국전자통신연구원 | Resistive memory device and method of fabricating the same |
-
2012
- 2012-03-15 CN CN201210068383.7A patent/CN102569337B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102569337A (en) | 2012-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhou et al. | Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device | |
| CN103035845B (en) | The preparation method of organic (the inorganic)/metal of high conductivity/inorganic (organic) multi-layer-structure transparent conductive film | |
| CN102282673A (en) | Transparent memory for transparent electronic device | |
| CN105185901B (en) | A kind of compound resistive memory based on molybdenum disulfide and preparation method thereof | |
| CN106531887A (en) | Low-temperature erasable ferroelectric organic transistor nonvolatile memory | |
| US20140145139A1 (en) | Transparent flexible resistive memory and fabrication method thereof | |
| CN104485418A (en) | Self-gating resistance-variable memory unit and preparation method thereof | |
| CN109638154A (en) | A kind of flexible gating tube device and preparation method thereof based on hafnium titanyl laminated film | |
| CN103606389B (en) | High conductivity is inorganic, the preparation method of metal-doped multi-layer-structure transparent conductive film | |
| CN104733614B (en) | Organic thin film solar cell based on two-layer hybrid active layer and preparation method thereof | |
| KR20130053097A (en) | Printed organic nand flash memory and methods therefor | |
| CN104465989A (en) | Three-terminal atom switching device and preparing method thereof | |
| CN102569337B (en) | Anti-crosstalk flexible transparent memory array and preparation method thereof | |
| CN103258958B (en) | Organic resistive random access memory and preparation method thereof | |
| CN102610755B (en) | Ultra-low-power organic resistance changing memory device and manufacturing method thereof | |
| CN105237745A (en) | Quaternary phosphonium salt group-containing conjugated polyelectrolyte and its use in organic photoelectric device | |
| CN104425712A (en) | Completely-transparent resistive random access memory adopting rare earth oxide as storage layer and production method thereof | |
| CN105140396A (en) | Fluorine-triphenylamine conjugated polymer and preparation method of electric storage device of fluorine-triphenylamine conjugated polymer | |
| CN102593142B (en) | Anti-crosstalk flexible transparent memory array and production method thereof | |
| CN109545967A (en) | A kind of organic resistive random access memory | |
| CN103579499A (en) | Resistive random access memory device with rectification characteristic and manufacturing method thereof | |
| CN103618046A (en) | Memory device made of graphene quantum dot/poly-(3, 4-ethylenedioxy group thiophene)-poly-(styrenesulfonic acid) materials and preparation method | |
| CN105384930A (en) | Conjugated-nonconjugated N-form polyelectrolyte and application thereof in organic photoelectric devices | |
| CN104134751A (en) | Polymer solar cell in symmetrical structure and application of polymer solar cell | |
| CN108198938A (en) | A kind of organic electrical storage of self-rectifying and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20200315 |