CN105324838B - Bonding wire for semiconductor device and manufacture method thereof - Google Patents

Bonding wire for semiconductor device and manufacture method thereof Download PDF

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Publication number
CN105324838B
CN105324838B CN201580000889.6A CN201580000889A CN105324838B CN 105324838 B CN105324838 B CN 105324838B CN 201580000889 A CN201580000889 A CN 201580000889A CN 105324838 B CN105324838 B CN 105324838B
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China
Prior art keywords
line
heat treatment
wire
less
ratio
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CN201580000889.6A
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Chinese (zh)
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CN105324838A (en
Inventor
山田隆
小田大造
大石良
榛原照男
宇野智裕
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Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Kanae Co Ltd
Nippon Micrometal Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
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    • C22C5/08—Alloys based on silver with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
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Abstract

The present invention is in order to suppress tilt bad and rebound bad simultaneously, a kind of bonding wire for semiconductor device is provided, it is characterized in that, (1) in comprising line center the cross section (line central cross-section) parallel with line length direction, there is not the ratio a/b of major diameter a and minor axis b is more than 10 and area is 15 μm2Above crystal grain (bacillar structure)；(2) result of the crystal orientation in the line length direction in mensuration line central cross-section, the existence ratio of the crystal orientation<100>that be less than 15 ° poor relative to described line length orientation angle is calculated as more than 50% and less than 90% with area ratio；(3) result of the crystal orientation in the line length direction in mensuration line surface, the existence ratio of the crystal orientation<100>that be less than 15 ° poor relative to described line length orientation angle is calculated as more than 50% and less than 90% with area ratio.Carrying out at least 1 draft in wire-drawing process is the Wire Drawing of more than 15.5%, and the temperature of that heat treatment nearest from finished heat treatment before finished heat treatment temperature and finished heat treatment is set to prescribed limit.

Description

Bonding wire for semiconductor device and manufacture method thereof
Technical field
The present invention relates to bonding wire for semiconductor device, particularly relate to comprise partly leading of Ag or Ag alloy Body device closing line and manufacture method thereof.
Background technology
Semiconductor device is by loading quasiconductor on circuit layout card (lead frame, substrate, band etc.) Element also will use semiconductor device between the electrode on semiconductor element and the electrode on circuit layout card With closing line (the most simply referred to as " closing line ".) connect formed.
As bonding wire for semiconductor device, employ the lametta about the μm of line footpath 20～50. One end of closing line uses ultrasound wave and by thermo-compressed mode, the tip of line is added heat fusing and form ball After, this bulb is bonded on the electrode of semiconductor element.The other end of line is by ultrasonic wave pressure Connect and be bonded on the electrode of circuit layout card.
As closing line blank, employed high-purity Au (golden) or Au alloy in the past.But, Owing to Au is expensive, it is desirable to be other type of metal that Master Cost is cheap.Instead The line blank of the low cost of Au, have studied Cu (copper).Compared with Au, Cu easily aoxidizes, because of This is in patent documentation 1, as core and the double-deck closing line of coating (peripheral part), it is shown that Core uses Cu, coating to use the example of Pd (palladium).It addition, disclosed in patent documentation 2 A kind of closing line, it has: the core that is made up of Cu or Cu alloy；On the surface of this core with Pd is the coating of main constituent；With the alloy-layer that the surface at this coating comprises Au and Pd.
Cu line or Pd are coated to Cu line, owing to the hardness after engaging is high, it is therefore desirable for obtain hardness Lower material.As have be equal to Au or electrical conductance that it is above and hardness ratio Cu low and And there is the element of oxidative resistance, Ag (silver-colored) can be enumerated.
Patent Document 3 discloses a kind of Ag-Au-Pd ternary alloy system based on Ag to engage Line.This closing line is annealed heat treatment before progressive die wire drawing, is tempered at heat after progressive die wire drawing Reason, by ball bond in nitrogen atmosphere.Thus, though the harshness under high temperature, high humidity and high pressure Use environment under use, it is also possible to maintain and the connection reliability of aluminum pad.
Patent Document 4 discloses Ag-Au, Ag-Pd, the Ag-Au-Pd based on Ag to close Gold thread material.The central part of alloy wire comprises elongated crystal grain or equi-axed crystal, other of alloy wire Part is made up of equi-axed crystal, comprises crystal grain is total amount more than the 20% of annealing twin.To encapsulate system The q&r of product rise to purpose.
The thin spaceization of the narrower intervals of adjacent closing line develops.As corresponding docking The requirement of zygonema, it is desirable to graph thinning, high intensity, ring (loop: loop) control, zygosity Improve.The densification installed due to quasiconductor, causes ring-shaped to complicate.As annular Classification, ring height, the line length (span) of joint become index.For up-to-date quasiconductor, It is internally formed and loads in mixture epipodium and low ring, short span and long span etc. a packaging body (package) The situation of contrary ring increases.If being used a kind of closing line to realize, need strict closing line Design of material.
As the characteristic of the line used in batch production, stablized by the ring control in bonding process, Zygosity also improves, suppresses line to deform, meet the long-term reliability of connecting portion in resin enclosure operation Deng comprehensive characteristic, it is desired to be able to tackle most advanced thin space connection, stacked die connection etc. High-density installation.
Citation
Patent documentation
Patent documentation 1: Japan's public table WO2002-23618 publication again
Patent documentation 2: Japanese Unexamined Patent Publication 2011-77254 publication
Patent documentation 3: No. 4771562 publications of Japanese Patent No.
Patent documentation 4: Japanese Unexamined Patent Publication 2013-139635 publication
Summary of the invention
By multi-pipe pin, thin space, in an IC, carry out the line that line length, ring height are different Connection loads in mixture.When thin space, the inclination (leaning) that ball erection part occurs sometimes is bad.Incline The phenomenon that the worst line erection part referred near ball bond is toppled over, the interval of adjacent lines is close.Demand Improve and tilt bad wire material.
It addition, in stacked die connects, sometimes rebounding, (spring) is bad becomes problem.At layer During the line of folded chip connects, more use what bonding station compared with common wire bonding reversed to be claimed Make the inverse connection engaged.Inverse engage be formed on the electrode on chip in the first phase projection and Second stage engages on the electrodes of the substrate bulb, on above-mentioned projection wedge joint splice grafting zygonema Method.By this inverse joint, it is possible to by the suppression of ring height for relatively low, even and chip laminate number Increase, step difference (the rank discrepancy in elevation) at a relatively high situation also is able to realize stable ring and controls.The opposing party Face, in this inverse joint, occurs rebounding of closing line warpage bad sometimes.In memory IC, Stacked die is just becoming main flow, and wait in expectation this bad reduction of rebounding.
Ag content is that Ag or the Ag alloy of more than 90 mass % (is also referred to as " Ag in this manual Or Ag alloy ".) closing line (being sometimes referred to as " line " in this manual), owing to hardness is low, because of This is difficult to chip damage.Thus, it is mostly used for inverse joint.On the other hand, in inverse joint such as Above-mentioned be susceptible to rebound bad.It addition, it is low to result from the hardness of Ag or Ag alloy wire, hold Easily run-off the straight is bad.
For Ag or Ag alloy wire, although exist improve tilt bad and rebound bad in appoint A kind of bad method, tilts bad it can be difficult to improve simultaneously and rebounds bad.The purpose of the present invention It is to provide and improves the bad and bad semiconductor device comprising Ag or Ag alloy that rebounds simultaneously By closing line and manufacture method thereof.
That is, idea of the invention is as follows.
(1) a kind of bonding wire for semiconductor device, its Ag content is more than 90 mass %, and it is special Levying and be, comprising line center the cross section parallel with line length direction, (hereinafter referred to as " line center is cut Face ") in, there is not the ratio a/b of major diameter a and minor axis b is more than 10 and area is 15 μm2Above Crystal grain (hereinafter referred to as " bacillar structure "), measure line length direction in above-mentioned line central cross-section The result of crystal orientation, poor relative to above-mentioned line length orientation angle is the crystal orientation ＜ of less than 15 ° The existence ratio of 100 ＞ is calculated as more than 50% and less than 90% with area occupation ratio, measures the line in line surface The result of the crystal orientation of length direction, poor relative to above-mentioned line length orientation angle is less than 15 ° The existence ratio of crystal orientation ＜ 100 ＞ is calculated as more than 50% and less than 90% with area occupation ratio.
(2) according to the bonding wire for semiconductor device described in above-mentioned (1), it is characterised in that described Bonding wire for semiconductor device comprises in Pd, Cu, Au, Zn, Pt, Ge, Sn, Ti, Ni 1 More than Zhong, in the case of comprising Pd, Cu, Au, Zn, these elements adds up to 0.01～8 matter Amount %, in the case of comprising Pt, Ge, Sn, Ti, Ni, these elements adds up to 0.001～1 Quality %, surplus is Ag and impurity.
(3) according to the bonding wire for semiconductor device described in above-mentioned (1) or (2), it is characterised in that The S contained in above-mentioned impurity be below 1 mass ppm, Cl be below 0.5 mass ppm.
(4) a kind of manufacture above-mentioned (1)～the bonding wire for semiconductor device described in any one of (3) Method, it is characterised in that there is the wire-drawing process of the Wire Drawing carrying out more than 1 time, above-mentioned Wire-drawing process has the Wire Drawing that at least 1 draft is 15.5～30.5%, at wire-drawing process Way in carry out the heat treatment of more than 1 time, after wire-drawing process terminates, carry out finished heat treatment, described Among the heat treatment of more than 1 time temperature from nearest that heat treatment of finished heat treatment be 600 DEG C with Upper and less than 800 DEG C, the temperature of finished heat treatment be 300 DEG C less than 600 DEG C.
The present invention is directed to Ag or Ag alloy bond line, by making line central cross-section there is not threadiness group Knitting, cross section ＜ 100 ＞ orientation ratio is more than 50% and less than 90%, and Surface L T.LT.LT 100 ＞ is orientated ratio It is more than 50% and less than 90%, it is possible to improve simultaneously and tilt bad and rebound bad.By in wire drawing Operation carries out the Wire Drawing that draft at least one times is 15.5～30.5%, terminates at wire-drawing process After carry out heat treatment (finished heat treatment), and carry out in the way of wire-drawing process at the heat of more than 1 time Reason, by (final from that heat treatment that finished heat treatment is nearest among the heat treatment of described more than 1 time Front heat treatment) temperature is set to more than 600 DEG C and less than 800 DEG C, and finished heat treatment temperature is set to 300 DEG C less than 600 DEG C, it is possible to form above-mentioned crystalline structure.
Detailed description of the invention
If distinguishing viewed crystallization in Ag or Ag alloy bond line by the shape in sightingpiston Tissue, then when the situation that differential seat angle is more than 15 degree of adjacent crystal orientation is defined as crystal boundary, Can be categorized as the ratio (a/b) of major diameter a and minor axis b of the crystal grain shape close to 1 crystal and The crystal of the elongated shape that a/b value is big.A/b is also referred to as equiax crystal close to the crystal of 1.Here, will A/b is more than 10 and the area of crystal grain in sightingpiston is 15 μm2Above crystal grain is defined as " fiber Shape tissue ".
When for Ag or Ag alloy bond line, with comprising line center (line central shaft) and line length The parallel cross section of degree direction (bobbin to) (is also referred to as line central cross-section in this manual.It is bag Line cross section containing line central shaft.) observe time, observe threadiness defined above near online central shaft The situation of tissue is more.The crystal being referred to as elongated crystal grain 18 in patent documentation 4 is equivalent to fiber Shape tissue (with reference to Figure 1B of the document).Part beyond bacillar structure is that a/b is close to 1 Crystal grain.
For each crystalline structure occurred in sightingpiston, it is possible to measure ＜ 100 ＞ orientation.As sightingpiston, Select above-mentioned line central cross-section, measure the crystal orientation in line length direction in above-mentioned line central cross-section As a result, representing poor relative to above-mentioned line length orientation angle with area occupation ratio is the crystal orientation of less than 15 ° The existence ratio of ＜ 100 ＞, and named " cross section ＜ 100 ＞ is orientated ratio ".It addition, as observing Face, selects line surface, measures the result of the crystal orientation in line length direction in above-mentioned line surface, uses It is crystal orientation ＜ 100 ＞ of less than 15 ° that area occupation ratio represents poor relative to above-mentioned line length orientation angle There is ratio, and named " Surface L T.LT.LT 100 ＞ is orientated ratio ".
In the present invention, for Ag or Ag alloy bond line, when online central cross-section does not exist fibre Dimension shape tissue, cross section ＜ 100 ＞ orientation ratio is more than 50% and less than 90%, and Surface L T.LT.LT 100 ＞ takes To ratio be more than 50% and less than 90% time, it is possible to suppression tilt bad and rebound bad.It addition, When make cross section ＜ 100 ＞ orientation ratio and Surface L T.LT.LT 100 ＞ orientation ratio be all less than 90% same Time, when there is not bacillar structure, it is possible to suppression is rebounded bad.It addition, when making Surface L T.LT.LT 100 ＞ take To ratio be more than 50% time, it is possible to suppression tilt bad.But when cross section ＜ 100 ＞ is orientated ratio During less than 50%, run-off the straight is bad sometimes, and therefore cross section ＜ 100 ＞ orientation ratio is set as 50% Above.
In the case of there is bacillar structure in online central cross-section, can according to the length direction of line shape Becoming there is the part of bacillar structure and there is not the part of bacillar structure, 2nd engages (wedge joint conjunction) The fracture strength in portion is different according to each position, and 2nd engages instability, rebounds not the most sometimes Good.But, by the present invention in that bacillar structure does not exists, it is possible to suppress to rebound bad generation.
The present invention, cross section ＜ 100 ＞ orientation ratio and Surface L T.LT.LT 100 ＞ orientation ratio are all more than 50% And less than 90%, i.e. both ratios be identical degree and for certain ratio (90%) below time, The fracture strength at 2nd junction surface is the size of appropriateness, and is tailed off by the difference caused by minute sites, because of This is difficult to rebound bad.
It addition, when Surface L T.LT.LT 100 ＞ orientation ratio is too low, ball neck is easily deformed in the horizontal, because of This is susceptible to bad, but is more than 50% by making Surface L T.LT.LT 100 ＞ orientation ratio, it is possible to Suppression tilts bad generation.
Closing line is manufactured by Wire Drawing.Wire Drawing be make wire rod in casement by 1 time with On reduce the processing of area of section of blank.Ready line footpath is the blank of several millimeters, by repeatedly entering Wire Drawing under row cold conditions, makes line footpath attenuate successively, forms the closing line in score footpath.Generally will The draft of every 1 passage (often from casement by once) is set to 1～15%.Sometimes at wire-drawing process Way in or wire-drawing process terminate after carry out heat treatment.
When using Ag or Ag alloy blank to carry out common Wire Drawing, can online being centrally formed Bacillar structure.It addition, by the cold deformation in Wire Drawing, the crystal orientation on line surface is by shadow Ringing, Surface L T.LT.LT 100 ＞ orientation ratio improves.
By the heat treatment after Wire Drawing, it is possible to eliminate the bacillar structure at (elimination) line center. But, when to eliminate bacillar structure by heat treatment, require more than at the high-temperature hot of 800 DEG C Reason, carries out the result of heat treatment, and the crystal orientation random (random) of the crystal constituting line is changed, table Face ＜ 100 ＞ orientation ratio declines, it is difficult to Surface L T.LT.LT 100 ＞ realizing more than 50% is orientated ratio.
In the present invention, by the draft in Wire Drawing is studied, and it is limited to wire drawing In Tu and wire-drawing process terminate after the pattern of heat treatment that carries out, bacillar structure can be made not deposit , make cross section ＜ 100 ＞ orientation ratio is more than 50% and less than 90% simultaneously, Surface L T.LT.LT 100 ＞ takes It is more than 50% and less than 90% to ratio.Thereby, it is possible to suppression simultaneously tilts bad and rebounds bad.
That is, there is the wire-drawing process of the Wire Drawing that Ag or Ag alloy blank carries out more than 1 time, The Wire Drawing that draft at least one times is 15.5～30.5% is carried out in wire-drawing process.And then, The way of wire-drawing process carries out the heat treatment of more than 1 time, after wire-drawing process terminates, is also carried out heat treatment (finished heat treatment).By making among the heat treatment of above-mentioned more than 1 time from nearest that of finished heat treatment Secondary heat treatment (heat treatment before final) temperature is more than 600 DEG C and less than 800 DEG C, makes finished heat treatment Temperature be 300 DEG C less than 600 DEG C, it is possible to be formed as online central cross-section does not exist threadiness Tissue, Surface L T.LT.LT 100 ＞ orientation ratio and cross section ＜ 100 ＞ orientation ratio all excellent in the invention described above Ag or Ag alloy bond line in the range of choosing.By carry out draft at least one times be 15.5～ The Wire Drawing of 30.5%, it is possible to realize bacillar structure than the fewest crystalline structure, by thereafter Heat treatment, bacillar structure easily eliminates.Finished heat treatment temperature is set to 300 DEG C be above because of It is below the upper limit of the present invention for thus enabling that cross section ＜ 100 ＞ orientation ratio, by finished heat treatment temperature Degree is set to be because less than 600 DEG C thus enabling that Surface L T.LT.LT 100 ＞ orientation ratio is under the present invention More than limit.Final front heat treatment temperature is set to 600 DEG C be above to make line entirety carry out recrystallization Change, heat treatment temperature before final is set to 800 DEG C and the following is thick in order to suppress to grow partly Crystal grain.
About carrying out period of Wire Drawing that draft is 15.5～30.5%, limit the most especially, Either can after the most final front heat treatment before final front heat treatment.Preferably will be final Before before front heat treatment or just final after heat treatment.
For having carried out the Wire Drawing after final front heat treatment, total draft during this period, passage Number does not the most limit.Preferably total draft is less than 95%.If so, it becomes possible to finally Heat treatment obtains desired crystalline structure with comparalive ease.
For the Wire Drawing carried out before heat treatment before final, total draft during this period, passage Number does not the most limit.Do not limit it addition, carry out heat treatment before heat treatment for whether before final Fixed.The heat treatment temperature etc. carried out in the case of heat treatment is also not specially limited.
The closing line of the present invention, is closed by Ag or Ag using Ag content to be more than 90 mass % Gold is as blank, it is possible to play effect fully.When Ag content is less than 90 mass %, resistivity Too high, it is not suitable as closing line and uses.As the composition beyond Ag, can be formed containing with Ag Solid solution, the composition being difficult to break in wire-drawing process, such as Pd, Cu, Au, Zn, Pt, Ge, Sn、Ti、Ni。
The closing line of the present invention, by be set to containing following selection component, surplus comprise Ag and The Ag alloy of impurity, it is possible to play excellent effect.
As the method for the long-term reliability evaluating closing line, except the heat run at most used is Beyond high temperature keeping in dry atmosphere is evaluated, also evaluate as general high humidity heating and carry out PCT test (pressure cooker test: pressure cooker cooking test).Heat recently as high humidity Evaluate, it is desirable to test (High Accelerated Temperature and at tightened up HAST Humidity Stress Test) (temperature 130 DEG C, relative humidity 85%RH (Relative Humidity), Do not occur bad in 5V).In the present invention, it is grouped into by the one-tenth as line, containing total 0.01 More than at least one in more than quality %, Pd, Cu, Au, Zn, it is possible to test at HAST In obtain good high humidity heating evaluation result.On the other hand, when the content of Pd, Cu, Au, Zn When totalling over 8 mass %, the intensity of line self improves, and therefore the fracture strength at 2nd junction surface is also Improve, be susceptible to rebound bad, therefore content is added up to and be set as below 8 mass %.
In the present invention, it is grouped into by the one-tenth as line, possibly together with amounting to more than 0.001 mass % , more than at least one in Pt, Ge, Sn, Ti, Ni, there is the ball shape making 1st engage and become Obtain effect well.On the other hand, 1 matter is totalled over when the content of Pt, Ge, Sn, Ti, Ni During amount %, the intensity of line self improves, and therefore the fracture strength at 2nd junction surface also improves, and easily sends out Life is rebounded bad, is the most preferably added up to by content and is set as below 1 mass %.
In the present invention, so by make online in the S content that contains as impurity be 1 mass Below ppm, and to make the Cl content contained as impurity be below 0.5 mass ppm, it is possible to make The FAB shape that 1st engages becomes good.
The manufacture method of the closing line of the present invention is as described above.That is, use containing the invention described above Ag or the Ag alloy blank of composition carries out Wire Drawing, subtracts face in wire-drawing process at least one times Rate is the Wire Drawing of 15.5～30.5%, carries out heat treatment (at final heat after wire-drawing process terminates Reason), and in the way of wire-drawing process, carry out the heat treatment of more than 1 time, will the most front final heat treatment (institute State that heat treatment nearest from finished heat treatment among the heat treatment of more than 1 time) temperature be set as More than 600 DEG C and less than 800 DEG C, finished heat treatment temperature is set as 300 DEG C less than 600℃.Thereby, it is possible to be formed as online central cross-section there is not bacillar structure, cross section ＜ 100 ＞ Orientation ratio be more than 50% and less than 90%, Surface L T.LT.LT 100 ＞ orientation ratio be more than 50% and Ag or the Ag alloy bond line of less than 90%.
Embodiment
About the raw material of closing line, as the Ag of main constituent employ purity be 99.99 mass % with On highly purified blank, as the Pd of addition element, Cu, Au, Zn, Pt, Ge, Sn, The raw material of Ti, Ni employs the blank that purity is more than 99.9 mass %.About containing impurity element The level of S, Cl, contains S, Cl wittingly.
After Ag or the Ag alloy of the composition be formed as containing regulation, it is made for number milli by continuous casting The blank in rice noodle footpath, has then carried out being pulled out by the die drawing under cold conditions and the Wire Drawing that realizes and heat Process.About the draft of Wire Drawing, in a part for example of the present invention and comparative example, bestow Draft is set to by 1～10 passages on the way the operation of 15.5～30.5%, in addition Draft is set to 5.5%～15.0% by passage.Draft be more than 15.5% passage be located at just Before final after heat treatment.Finish line footpath after making Wire Drawing terminate is 15～25 μm.
As the heat treatment before and after wire drawing, carry out: at the final heat carried out after wire-drawing process terminates Reason and will carry out before finished heat treatment among the heat treatment that carries out in wire-drawing process way final before Heat treatment.Before final in heat treatment, the comparative example of all of example of the present invention and a part will finally before Heat treatment temperature is set to more than 600 DEG C and less than 800 DEG C.For finished heat treatment, all of present invention Finished heat treatment temperature is set to 300 DEG C less than 600 DEG C by the comparative example of example and a part.Will be from It is heat-treated to the total draft that wire drawing terminates before Zhong and is set to 80～90%.
[closing line containing component analysis]
The concentration containing composition (beyond impurity) in closing line is divided by icp analysis, ICP mass spectrum Analysis etc. is determined.Impurity concentration in closing line passes through GDMS (Glow Discharge Mass Spectrometry) analysis is determined.GDMS analyze be under an ar atmosphere using sample as Negative electrode produces glow discharge, in plasma sputter specimen surface, use mass spectrograph measure by from The method of the constitution element of son.
[crystalline structure of closing line]
Line center the cross section (line central cross-section) parallel with line length direction and line table will be comprised Face, as sightingpiston, has carried out the evaluation of crystalline structure.As evaluation methodology, employ the electronics back of the body and dissipate Penetrate diffraction approach (EBSD:Electron Backscattered Diffraction).EBSD method has energy Enough observe the crystal orientation of sightingpiston and illustrate crystal orientation between adjacent measuring point differential seat angle this The feature of sample, even fine rule as closing line, it is also possible to compare the easiest and observe accurately Crystal orientation.
Should be noted that in the case of implement EBSD method with curved surface as line surface for object. When the position that mensuration curvature is big, it is difficult to carry out the mensuration that precision is high.But, by by for mensuration Closing line is fixed into linearity in the plane, measures the par of the immediate vicinity of this closing line, with regard to energy Enough carry out the mensuration that precision is high.In particular, it is preferred that the face that is formed as is such measures region.Week To size, with the center in line length direction as axle, be set to less than the 50% of line footpath, line length direction Size be set to below 100 μm.Preferably, the size of circumference is set to less than the 40% of line footpath, The size in line length direction is set to below 40 μm, if so, then due to the contracting of minute Short and improve determination efficiency.In order to improve precision further, preferably measure more than 3 positions, obtain Consider the average information of deviation.More than measurement site distance 1mm make to keep off preferably.
Ratio is orientated for cross section ＜ 100 ＞ orientation ratio and Surface L T.LT.LT 100 ＞, can be with special soft It is whole that the part OIM analysis etc. of company (the such as TSL ソ リ ュ シ ョ Application ズ) determines Crystal orientation, as female group, measures the crystal orientation in line length direction, its result, has calculated relatively Existence ratio (area occupation ratio) in crystal orientation ＜ 100 ＞ that line length orientation angle difference is less than 15 °. For bacillar structure, by special-purpose software (such as TSL ソ リ ュ シ ョ Application ズ company OIM analysis etc.) calculate major diameter a, the ratio a/b of minor axis b and the area of crystal grain, according to definition Have rated the presence or absence of bacillar structure.
[inclination]
On the lead frame evaluated, engage 100 with the long 5mm of ring, ring height 0.5mm. As evaluation methodology, from chip level direction observation line erection part, with the center through ball bond The interval (tilting interval) when being spaced apart maximum of vertical line and line erection part is evaluated.Tilting Interval is good less than being judged as in the case of line footpath in terms of inclination, is tilting the interval feelings more than line footpath Under condition, erection part tilts, and is therefore judged as tilting bad.Use observation by light microscope 100 The line engaged, counting tilts bad radical.Bad is to be designated as ◎ when 0, bad be 1～ Be designated as zero when 5, bad be designated as when more than 6 ×.
[rebounding]
On the Si chip evaluated, engage 100 with the long 2.5mm of ring, ring height 0.15mm. In order to evaluate spring-back properties, the projection being formed on electrode carries out inverse joint, this is inverse engage be into The method of attachment that the wedge joint of row closing line closes, observes rebounding of closing line warpage bad.As evaluation Method, uses the line engaged of observation by light microscope 100, counts the bad root that rebounds Number.Bad is to be designated as ◎ when 0, and bad is to be designated as zero when 1～3, bad note when being 4～5 For △, bad be designated as when more than 6 ×.
[HAST]
Evaluate as high humidity heating, carried out HAST test.Engaged about with wire bonding device Semiconductor device, be placed on temperature 130 DEG C, humidity 85%RH, 5V so in the environment of, often Just took out every 48 hours and be evaluated.As evaluation methodology, measure resistance, the examination risen by resistance Sample is designated as NG.Until the sample that time is more than 480 hours becoming NG is designated as ◎, for Within 384 hours, be designated as zero less than the sample of 480 hours, be 288 hours less than 384 Hour sample be designated as △, the sample less than 288 hours is designated as ×.
[FAB core shift]
Have rated the FAB shape that 1st engages.On the lead frame evaluated, make of wire bonding device 100 FAB.As evaluation methodology, SEM (ultramicroscope) is used to observe 100 FAB, It is designated as OK during for spherical shape, core shift, shrinkage cavity are designated as NG, its quantity is counted.Will NG is that the situation of 0 is designated as ◎, and the situation that NG is 1～5 is designated as zero, by NG be 6～ The situation of 10 is designated as △, the situation that NG is more than 11 is designated as ×.
[crimping ball shape]
Have rated the ball shape that 1st engages.On the Si chip evaluated, engage with wire bonding device 100.As evaluation methodology, use observation by light microscope 100 crimping bulb, will be close to Circular is designated as OK, will become petal-like and be designated as NG, and be counted its quantity.By NG It is that the situation of 0 is designated as ◎, the situation that NG is 1～5 is designated as zero, is 6～10 by NG Individual situation is designated as △, the situation that NG is more than 11 is designated as ×.
In any of the above-described evaluation, be all ◎, zero, △ be qualified, only × for defective.
Result is shown in Table 1.To departing from the numerical value of the scope of the invention, project mark underscore.
Example 1～43 of the present invention, containing the composition of the scope of the invention, carries out 1 time subtracting in wire-drawing process Face rate is the Wire Drawing of 15.5～30.5%, heat treatment temperature before final is set to more than 600 DEG C and Less than 800 DEG C, finished heat treatment temperature is set to 300 DEG C less than 600 DEG C.Its result, energy Enough make bacillar structure not exist, simultaneously cross section ＜ 100 ＞ orientation ratio be more than 50% and 90% with Under, Surface L T.LT.LT 100 ＞ orientation ratio be more than 50% and less than 90%.
One-tenth as line is grouped into, containing amounting to more than 0.01 mass %, Pd, Cu, Au, Zn In at least one more than example of the present invention, HAST result of the test is zero or ◎, has obtained the best Good result.One-tenth as line is grouped into, containing amount to more than 0.001 mass %, Pt, Ge, The example of the present invention more than at least one in Sn, Ti, Ni, crimping ball shape is zero or ◎, obtains The best result.It is that below 1 mass ppm, Cl content are as the Impurity S con-tent in line Example of the present invention below 0.5 mass ppm, FAB is shaped as zero or ◎, has obtained good result.
The operation that comparative example 44,45 does not has draft to be more than 15.5% in wire-drawing process, online in Producing bacillar structure, rebounding, it is bad to be evaluated as.Comparative example 46, owing to finished heat treatment temperature is low, Therefore cross section ＜ 100 ＞ orientation ratio is beyond the upper limit, and rebounding, it is bad to be evaluated as.Comparative example 47, due to Finished heat treatment temperature is high, and therefore cross section ＜ 100 ＞ orientation ratio deviates from lower limit, with Surface L T.LT.LT 100 ＞ orientation ratio is mutually auxiliary less than 70%, tilts to be evaluated as bad.Comparative example 48, at final front warm Reason temperature is low, and finished heat treatment temperature is high, therefore cross section ＜ 100 ＞ orientation ratio and Surface L T.LT.LT 100 ＞ orientation ratio all deviates from lower limit, tilts to be evaluated as bad.Comparative example 49, final front heat treatment temperature Spend low, and the operation not having draft to be more than 15.5% in wire-drawing process, Surface L T.LT.LT 100 ＞ takes Low to ratio and there is bacillar structure, there occurs and rebound bad and tilt bad.Comparative example 50, Owing to final front heat treatment temperature is low and finished heat treatment temperature is low, therefore Surface L T.LT.LT 100 ＞ orientation ratio Rate is high, and rebounding, it is bad to be evaluated as.Comparative example 51, final before heat treatment temperature is low and finished heat treatment Temperature is low, and the operation not having draft to be more than 15.5% in wire-drawing process, cross section ＜ 100 ＞ orientation ratio and Surface L T.LT.LT 100 ＞ orientation ratio all exceed the upper limit and there is bacillar structure, rebound It is evaluated as bad.
Probability is utilized in industry
The present invention can be used in quasiconductor.

Claims (4)

1. a bonding wire for semiconductor device, its Ag content is more than 90 mass %, its feature It is,
In comprising line center the cross section parallel with line length direction i.e. line central cross-section, do not exist The ratio a/b of major diameter a and minor axis b is more than 10 and area is 15 μm2Above crystal grain,
Measuring the crystal orientation in line length direction in described line central cross-section, result is relative to described Line length orientation angle difference is that the existence ratio of crystal orientation ＜ 100 ＞ of less than 15 ° is calculated as with area occupation ratio More than 50% and less than 90%,
The crystal orientation in the line length direction in mensuration line surface, result is relative to described line length side To the existence ratio of crystal orientation ＜ 100 ＞ that differential seat angle is less than 15 ° with area occupation ratio be calculated as 50% with Upper and less than 90%.
Bonding wire for semiconductor device the most according to claim 1, it is characterised in that
Described bonding wire for semiconductor device comprise Pd, Cu, Au, Zn, Pt, Ge, Sn, Ti, More than one in Ni, in the case of comprising Pd, Cu, Au, Zn, these elements adds up to 0.01～8 mass %, in the case of comprising Pt, Ge, Sn, Ti, Ni, these elements adds up to 0.001～1 mass %, surplus is Ag and impurity.
Bonding wire for semiconductor device the most according to claim 2, it is characterised in that
The S contained in described impurity be below 1 mass ppm, Cl be below 0.5 mass ppm.
4. the side of the bonding wire for semiconductor device described in any one of a manufacturing claims 1～3 Method, it is characterised in that
There is the wire-drawing process of the Wire Drawing carrying out more than 1 time, have in described wire-drawing process to Few 1 draft is the Wire Drawing of 15.5～30.5%, carries out 1 in the way of described wire-drawing process Secondary above heat treatment, carries out finished heat treatment, the heat of described more than 1 time after wire-drawing process terminates Among process, the temperature from nearest that heat treatment of described finished heat treatment is more than 600 DEG C and 800 Below DEG C, the temperature of described finished heat treatment be 300 DEG C less than 600 DEG C.
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