CN105304553B - The forming method of interconnection structure - Google Patents
The forming method of interconnection structure Download PDFInfo
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- CN105304553B CN105304553B CN201410265005.7A CN201410265005A CN105304553B CN 105304553 B CN105304553 B CN 105304553B CN 201410265005 A CN201410265005 A CN 201410265005A CN 105304553 B CN105304553 B CN 105304553B
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Abstract
The present invention provides a kind of forming method of interconnection structure, including：Substrate is provided, forms material layer；Removal portion of material layer is open with being formed；Form catalyst layer；Remove material layer and positioned at material surface catalyst layer with exposed portion substrate；The conductive plunger of carbon nano-tube material is formed on remaining catalyst layer；Form interlayer dielectric layer.The beneficial effects of the present invention are remove extra catalyst layer, only to form the carbon nano-tube material of conductive plunger part before the conductive plunger of carbon nano-tube material is formed.Compared with the prior art, need not after forming conductive plunger increase removal other parts carbon nano-tube material the step of, the influence of the conductive plunger for the carbon nano-tube material that the reduction that can so try one's best retains for needs, such as, it ensure that pattern and wall curvature for the carbon nanotubes to be formed etc., and then ensure the performance of the conductive plunger of the carbon nano-tube material formed.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and in particular to a kind of forming method of interconnection structure.
Background technology
With the continuous raising reduced with circuit level of electronic component size, starting to use in the prior art has
More low-resistivity, anti-electricity, material of the stronger copper of transfer ability as conductive structure.But with further subtracting for characteristic size
Small, the current density that interconnection line is carried is increasing, and copper has been increasingly difficult to further promote interconnection line performance to meet
Demand.
At the same time, carbon nanotubes (Carbon Nano Tubes, CNT) is due to having the tube wall for being similar to graphite, nanometer
Good calorifics and the electric properties such as grade duct, quantum size effect, high current density, high-termal conductivity, are increasingly becoming people and grind
The hot spot studied carefully, and as the new selection of interconnection structure material.
Therefore, carbon nanotubes how is preferably formed to be applied in the interconnection structure of semiconductor devices (such as shape
Into the conductive plunger of carbon nano-tube material), become the technical issues of those skilled in the art are urgently to be resolved hurrily.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of forming method of interconnection structure, by forming leading for carbon nano-tube material
Electric plug improves the performance of interconnection structure.
To solve the above problems, the present invention provides a kind of forming method of interconnection structure, including：
Substrate is provided；
Material layer is formed over the substrate；
The opening through the material layer is formed in the material layer；
Catalyst layer is formed on the surface of the material layer and the bottom of the opening；
The material layer and the catalyst layer positioned at material surface are removed, while retains the catalysis positioned at open bottom
Oxidant layer；
The conductive plunger of carbon nano-tube material is formed on remaining catalyst layer；
Form the interlayer dielectric layer for covering the conductive plunger；
Part interlayer dielectric layer is removed, to expose the conductive plunger of carbon nano-tube material.
Optionally, the step of forming material layer includes：Form photoresist, bottom anti-reflection layer or amorphous carbon material
Material layer.
Optionally, the step of forming material layer includes：Form the material layer of Other substrate materials；
The step of removing the material layer and the catalyst layer positioned at material surface includes：Institute is impregnated using developer solution
Material layer is stated, to remove the material layer and the catalyst layer positioned at material surface.
Optionally, the step of forming material layer includes：Form the material layer of Other substrate materials；
The step of removing the material layer and the catalyst layer positioned at material surface includes：Described in being removed using adhesive tape
Material layer and the catalyst layer positioned at material surface.
Optionally, formed in the material layer after the step of opening of the material layer, form catalyst layer
The step of before, further include：
Barrier layer is formed on the surface of the material layer and the bottom of the opening, and is formed in the barrier layer surface
Contact layer；
The step of forming catalyst layer includes：The catalyst layer is formed in the contact layer surface.
Optionally, the step of forming barrier layer includes：Form the barrier layer of tantalum or tantalum-nitride material.
Optionally, the step of forming contact layer includes：Form the contact layer of titanium nitride material.
Optionally, the step of forming barrier layer includes：The barrier layer is formed by the way of physical vapour deposition (PVD)；
The step of forming contact layer includes：The contact layer is formed by the way of physical vapour deposition (PVD).
Optionally, the step of forming catalyst layer includes：Form the catalyst layer of cobalt material.
Optionally, the step of forming catalyst layer includes：The catalyst layer is formed by the way of laser ablation.
Optionally, after the step of forming catalyst layer, the material layer and urging positioned at material surface are removed
Before the step of agent layer, further include：
The substrate and catalyst layer are made annealing treatment.
Optionally, include in the step of conductive plunger of formation carbon nano-tube material on remaining catalyst layer：
The mode of using plasma enhancing chemical vapor deposition forms the conductive plunger of the carbon nano-tube material.
Optionally, part interlayer dielectric layer is removed, is included with exposing the step of the conductive plunger of carbon nano-tube material：
Part interlayer dielectric layer is removed by flatening process, makes remaining interlayer dielectric layer and the carbon nano-tube material
The surface of conductive plunger flush.
Optionally, the step of forming interlayer dielectric layer includes：Form the interlayer dielectric layer that k values are less than 3.
Optionally, the step of forming interlayer dielectric layer includes：Using plasma enhances the mode shape of chemical vapor deposition
Into the interlayer dielectric layer.
Optionally, the flatening process is chemical mechanical grinding.
Optionally, the step of providing substrate includes：The first connecting portion part is formed in the substrate；
Include being formed in the material layer through the step of opening of the material layer：
Make the opening positioned at the top of the first connecting portion part.
Optionally, remove part interlayer dielectric layer, the step of to expose the conductive plunger of carbon nano-tube material after, also wrap
It includes：
Second connecting portion part is formed in remaining inter-level dielectric layer surface, and the second connecting portion part is made to be located at the carbon
Above the conductive plunger of nano-tube material.
Optionally, the step of forming second connecting portion part includes：Form the second connecting portion part of copper product.
Compared with prior art, technical scheme has the following advantages：
After forming opening in material layer, catalyst layer is formed on the surface of material layer and the bottom of the opening, so
The material layer and the catalyst layer positioned at material surface are removed afterwards.By removing extra catalyst layer, to form carbon
The conductive plunger of nano-tube material.Compared with the prior art, removal other parts need not be increased after conductive plunger is formed
The step of carbon nano-tube material, the shadow for the conductive plunger of carbon nano-tube material that reduction that so can be retains as far as possible for needs
It rings, for example, ensure that pattern and wall curvature of the carbon nanotubes to be formed etc., and then ensures the carbon nano-tube material formed
The performance of conductive plunger.
In alternative, the material layer is formed using photoresist, and developer solution is used to impregnate the material layer to remove
The material layer and the catalyst layer positioned at material surface since the material layer is dissolved by the developing removal, are formed at
The catalyst layer of the material surface also departs from material surface and then is removed accordingly, can so reach removal and be not required to
The catalyst layer (being formed at the catalyst layer in the opening) that reduction retains needs as far as possible while the catalyst layer wanted
The purpose of influence.
In alternative, the material layer is formed using photoresist, and the material layer is removed using adhesive tape and is located at
The catalyst layer of material surface, adhesive tape will not contact the catalyst layer positioned at open bottom substantially, and positioned at material surface
Catalyst layer will be together removed together with material layer, so as to being formed at the catalyst of open bottom not interfering with as far as possible
While layer, the material layer and the catalyst layer positioned at material surface are removed.
Description of the drawings
Fig. 1 to Fig. 8 be interconnection structure of the present invention one embodiment of forming method in each step structure diagram.
Specific embodiment
Due to carbon nano-tube material it is generally necessary to grow on a catalyst, the prior art is forming leading for carbon nano-tube material
During electric plug, catalyst layer often is formed in the surface of the first interlayer dielectric layer in interconnection structure and opening, then described
The conductive plunger of carbon nano-tube material is grown on catalyst layer.The conductive plunger of carbon nano-tube material at this time is not only formed at layer
Between dielectric layer opening in, be also formed into the surface of interlayer dielectric layer, thus also need to after this removal other parts carbon
Nano-tube material, and retain conductive plunger of the carbon nanotubes being located in opening as interconnection structure.
But the carbon nano-tube material for needing to retain easily is influenced during part carbon nano-tube material is removed
(carbon nanotubes namely in the opening).
For example, the prior art may remove the carbon nanotubes positioned at inter-level dielectric layer surface by the way of planarization.But
It is during planarization, although planarization, by the surface of the carbon nanotubes stopped in opening, this part of carbon is received
The surface of mitron is also highly susceptible to the influence of planarization, and the pattern of the carbon nanotubes in opening is caused to change.
Further, since planarization method of the prior art is generally chemical mechanical grinding (CMP), in process of lapping,
Lapping liquid (slurry) is also easily penetrated into the opening of the interlayer dielectric layer, and the carbon nanotubes of formation is impacted.
So in order to avoid problems of the prior art described previously as far as possible, the carbon nanotubes material to formation is reduced
The influence of the conductive plunger of material, so as to ensure the quality for the conductive plunger to be formed, the present invention provides a kind of formation of interconnection structure
Method, in the present embodiment, the forming method comprise the following steps：
Substrate is provided；Material layer is formed over the substrate；Opening through the material layer is formed in the material layer
Mouthful；Catalyst layer is formed on the surface of the material layer and the bottom of the opening；Remove the material layer and positioned at material
The catalyst layer on bed of material surface, while retain the catalyst layer positioned at open bottom；Carbon is formed on remaining catalyst layer to receive
The conductive plunger of nanotube material；Form the interlayer dielectric layer for covering the conductive plunger；Part interlayer dielectric layer is removed, exposing makes
The conductive plunger of remaining carbon nano-tube material exposes.
By above-mentioned steps, the carbon nano-tube material of conductive plunger part can be only formed, compared with the prior art, is not required to
To increase the carbon nano-tube material of removal other parts after conductive plunger is formed, can so reduce the carbon retained for needs
The influence of the conductive plunger of nano-tube material, and then ensure the performance of the conductive plunger of the carbon nano-tube material formed.
It is understandable for the above objects, features and advantages of the present invention is enable to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
With reference to figure 1, substrate is provided.In the present embodiment, the source-drain area that the substrate includes being formed by front process is (in figure
It is not drawn into) and grid, interlayer dielectric layer 100 is also formed with above grid, being formed with metal in the interlayer dielectric layer 100 inserts
Plug 50, the metal plug 50 are the first connecting portion part.
Play signal it should be understood that said structure is only the present embodiment, the present invention has for above-mentioned substrate
The structure of body does not limit.
Specifically, copper or tungsten may be employed as material in the metal plug 50, but likewise, the present invention to this not
It is limited in any way.
Specifically, it in the present embodiment, is also formed with being used between the metal plug 50 and the interlayer dielectric layer 100
The barrier layer 51 for preventing the metal in metal plug 50 from spreading.
In the present embodiment, tantalum nitride or tantalum may be employed as material in the barrier layer 51, but based on it is above-mentioned
The reasons why identical, whether the present invention is for necessarily being formed the material on the barrier layer 51 and barrier layer 51 and not doing any limit
It is fixed.
With continued reference to Fig. 1, material layer 80 is formed on the substrate.Portion of material layer 80 is removed with the shape in material layer 80
Into the opening 81 through the material layer 80.The carbon nano-tube material that the size of the opening 81 is subsequently formed for definition is led
The size of electric plug.
Meanwhile make the opening 81 positioned at the top of the metal plug 50 (the first connecting portion part), so that metal is inserted
Plug 50 exposes from the opening 81, in order to the conductive plunger of carbon nano-tube material and the gold that are formed in subsequent step
Belong to plug 50 to contact and realize electrical connection.
In the present embodiment, photoresist may be employed as material in the material layer 80.This is because photoresist compares appearance
It is easily removed in subsequent step, for example, stripping technology (lift-off process) removal photoresist may be employed, removed
Journey is smaller to the influence for needing the catalyst layer of member-retaining portion.
Correspondingly, the mode that spin coating (coating) may be employed forms the material layer 80 of the Other substrate materials.
It should be understood that be intended to be easy to the material being removed using formation herein to form the material layer 80,
So for that whether must form the material layer 80 using photoresist and be not construed as limiting, other materials for being easier to be stripped
Material, such as bottom anti-reflection layer (Bottom Antireflective Coating, BARC) or amorphous carbon can be used for
Form the material layer 80.Similarly, the present invention is not also limited for forming the mode of the material layer 80.
Due to being already formed with interlayer dielectric layer 100 in the present embodiment substrate, so in the present embodiment, the material layer
The separation layer for interlayer dielectric layer 100 and material layer 80 to be separated is also formed between 80 and the interlayer dielectric layer 100
110, correspondingly, the opening 81 also opens the separation layer 110, to expose the metal plug 50 of lower section.
Specifically, the present embodiment may be employed nitrating silicon carbide layer (nitrogen-doped silicon carbide,
NDC) the material as the separation layer 110 still, forms separation layer 110 as the prior art, the present invention is to separation layer 110
Material does not repeat, while is not also limited in any way.
With continued reference to Fig. 2, in the present embodiment, the shape successively also on the surface of the opening 81 and the material layer 80
Into barrier layer 210 and contact layer 220.
By being formed with metal plug 50 in substrate in this present embodiment, the barrier layer 210 is used to prevent metal plug
Metal diffusion in 50；Specifically, tantalum (Ta) may be employed in the barrier layer 210 or tantalum nitride (TaN) is used as material.
The mode that physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) may be employed forms the stop
Layer 210, such as sputtering sedimentation, but the present invention is not limited for how to form the barrier layer 210.
The contact layer 220 is used to reduce between the conductive plunger of carbon nano-tube material being subsequently formed and metal plug 50
Contact resistance.In the present embodiment, titanium nitride may be employed as material in the contact layer 220, but likewise, the present invention
This is not limited.
Specifically, the mode identical with forming barrier layer 210 may be employed in the contact layer 220, that is, using physics
The mode of vapor deposition is formed.
With reference to figure 3, catalyst layer 230 is formed in the bottom on 220 surface of contact layer and the opening 81.It is described to urge
Agent layer 230 is used for the growth basis as the carbon nano-tube material formed in subsequent step.The catalysis in the present embodiment
Oxidant layer 230 is made of tiny nano particle.
Specifically, the catalyst layer 230 in the present embodiment can be cobalt (Co) material, but the present invention is to above-mentioned catalysis
The specific material of oxidant layer 230 does not limit, and the catalyst layer 230 can also use the other materials shape such as cobalt aluminium (CoAl)
Into the catalyst layer 230.
In the present embodiment, the catalyst layer 230 of the cobalt material can pass through laser ablation (laser ablation)
Mode be formed at 220 surface of contact layer and be open 81 bottom.This mode can form more uniform cobalt
Granulosa, also, when the size of the opening 81 is smaller, cobalt granule also preferably can be formed in the opening by this method
81 bottoms.
It should be noted that the present invention is not limited for specifically which kind of mode to form the catalyst layer 230 using,
In actual mechanical process, forming method should be selected according to factors such as the specific materials of catalyst layer.
In addition, in the present embodiment, after the catalyst layer 230 is formed, also the catalyst layer 230 of formation is moved back
Fire processing.High temperature in annealing process can make particle (such as cobalt granule in the present embodiment) in catalyst layer 230 into one
Step cures, is attached on the substrate (being in the present embodiment contact layer 220), this is conducive to increase catalyst layer 230 and lining
Degree of adhesion between bottom makes the catalyst granules to be formed not easy to fall off.
With reference to figure 4, the material layer 80 and the catalyst layer 230 positioned at 80 surface of material layer, while reserved bit are removed
Catalyst layer 230 in 81 bottom of opening.
It is formed by material layer 80 in this present embodiment using photoresist, stripping technology (lift- may be employed in the present embodiment
Off process) remove the photoresist.
Specifically, developer solution, which may be employed, in the present embodiment impregnates the material layer 80, with remove the material layer 80 and
Catalyst layer 230 positioned at 80 surface of material layer.This is because photoresist is dissolved under the immersion of developer solution, institute is formed at
The catalyst layer 230 for stating photoresist surface is also removed therewith.Meanwhile the catalyst layer 230 positioned at 81 bottom of opening is then basic
It is unaffected.
It is the used example for being used to remove material layer 80 of the present embodiment more than it should be understood that.
In the other embodiment of the present invention, it can also can be used for removing the material layer 80 using other, while again to 81 bottom of opening
The catalyst layer 230 in portion influences smaller mode, for example, it is also possible to the material layer 80 is removed by the way of adhesive tape stripping,
Although adhesive tape only touches the catalyst layer 230 on 80 surface of material layer, material layer 80 can be together with this partial catalyst
Layer 230 is removed together, and the catalyst layer 230 positioned at 81 bottom of opening will not then touch adhesive tape substantially, thus substantially not
It can be affected.
With reference to figure 5, the conductive plunger 300 of formation carbon nano-tube material on remaining catalyst layer 230.The carbon nanometer
Tube material is growth starting point with the catalyst layer 230, and edge is grown up perpendicular to the direction of substrate surface, and then described in formation
The conductive plunger 300 of carbon nano-tube material.
In the opening 81 that step is formed before being located only within due to remaining catalyst layer 230, and the ruler of the opening 81
The very little size for defining the need conductive plunger to be formed, so, it is the basic shape of growth with the remaining catalyst layer 230
Into the size of carbon nanotubes be the size of the conductive plunger 300 that is formed along parallel substrate direction during the present invention needs.Also
It is to say, after conductive plunger 300 is formed, unwanted carbon nano-tube material need not be removed as the prior art, so
It can ensure that the carbon nano-tube material formed is not affected (for example, carbon nano-tube material pattern and wall curvature) as far as possible,
Make the conductive plunger to be formed 300 that there is preferable electric property.
In the present embodiment, plasma enhanced chemical vapor deposition (Plasma Enhanced may be employed
Chemical Vapor Deposition, PECVD) mode form the conductive plunger 300 of the carbon nano-tube material.It is this
Mode can form the preferable carbon nano-tube material of pattern.
In addition, in the present embodiment, the carbon nanotubes in the conductive plunger 300 of the carbon nano-tube material of formation is multi wall carbon
Nanotube (multi-walled carbon nanotube, MWNT), still, in other embodiments of the invention, can also
Form such as single-walled carbon nanotube (single-walled carbon nanotube, SWNT) or double-walled carbon nano-tube
The carbon nanotubes of other forms such as (double-walled carbon nanotube, DWNT), the limit that the present invention does not do this
It is fixed.
It is in the present embodiment, further comprising the steps of after the conductive plunger 300 is formed with reference to figure 6：Described
The interlayer dielectric layer for covering the conductive plunger 300 is formed on the substrate of exposing and the conductive plunger 300 of carbon nano-tube material
400, the interlayer dielectric layer 400 is used to that the conductive plunger 300 to be made to insulate.
In the present embodiment, the even ultralow k materials of low-k materials that k values are less than 3 may be employed in the interlayer dielectric layer 400
Material is formed, and is so conducive to reduce the RC retardation ratio of interconnection structure, is inhibited crosstalk.It should be understood that it is only this reality herein
It applies example to be used, whether the present invention using low-k materials for must not limit.
In addition, the inter-level dielectric can be formed in the present embodiment by way of plasma enhanced chemical vapor deposition
Layer 400, this mode has preferable Step Coverage ability, but the present invention to this and is construed as limiting.
With reference to figure 7, after the interlayer dielectric layer 400 is formed, part interlayer dielectric layer 400 is removed, exposes carbon nanometer
The conductive plunger 300 of tube material, that is to say, that make interlayer dielectric layer 400 and 300 surface of conductive plunger of the carbon nanotubes neat
It is flat, to provide condition to be subsequently formed new interconnection structure.
Specifically, the mode that chemical mechanical grinding (CMP) may be employed in the present embodiment removes part interlayer dielectric layer 400,
Chemical mechanical grinding stops when detecting carbon nano-tube material.
With continued reference to Fig. 8, after removing part interlayer dielectric layer 400, in the remaining 400 surface shape of interlayer dielectric layer
The interconnection structure of Cheng Xin, including separation layer 110`, interlayer dielectric layer 100` and second connecting portion part 50`；And make described second
Connecting component 50` is located at 300 top of conductive plunger of the carbon nano-tube material, is realized between the conductive plunger 300
Electrical connection.
In the present embodiment, the copper identical with the metal plug may be employed as material in the second connecting portion part 50`
Material.Correspondingly, it is also formed with preventing what metal from spreading between the second connecting portion part 50` and interlayer dielectric layer 100`
Barrier layer 51`.
Since the conductive plunger 300 of the carbon nano-tube material of formation will not be influenced substantially be subject to other steps, ensure that
The preferable electric property of conductive plunger 300 itself, thus after the second connecting portion part 50` is formed, the conductive plunger
300 is also corresponding with preferable electrical connection properties with second connecting portion part 50`.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (18)
1. a kind of forming method of interconnection structure, which is characterized in that including：
Substrate is provided；
Material layer is formed over the substrate；
The opening through the material layer is formed in the material layer；
Catalyst layer is formed on the surface of the material layer and the bottom of the opening；
The material layer and the catalyst layer positioned at material surface are removed, while retains the catalyst positioned at open bottom
Layer；
The conductive plunger of carbon nano-tube material is formed on remaining catalyst layer；
Form the interlayer dielectric layer for covering the conductive plunger；
Part interlayer dielectric layer is removed, to expose the conductive plunger of carbon nano-tube material；
The step of forming material layer includes：Form the material layer of Other substrate materials；
The step of removing the material layer and the catalyst layer positioned at material surface includes：The material is removed using adhesive tape
Layer and the catalyst layer positioned at material surface.
2. forming method as described in claim 1, which is characterized in that the step of forming material layer includes：Form photoresist, bottom
The material layer of portion's anti-reflecting layer or amorphous carbon material.
3. forming method as described in claim 1, which is characterized in that
The step of forming material layer includes：Form the material layer of Other substrate materials；
The step of removing the material layer and the catalyst layer positioned at material surface includes：The material is impregnated using developer solution
The bed of material, to remove the material layer and the catalyst layer positioned at material surface.
4. forming method as described in claim 1, which is characterized in that formed in the material layer through the material layer
After the step of opening, formed catalyst layer the step of before, further include：
Barrier layer is formed on the surface of the material layer and the bottom of the opening, and is formed and contacted in the barrier layer surface
Layer；
The step of forming catalyst layer includes：The catalyst layer is formed in the contact layer surface.
5. forming method as claimed in claim 4, which is characterized in that
The step of forming barrier layer includes：Form the barrier layer of tantalum or tantalum-nitride material.
6. forming method as claimed in claim 5, which is characterized in that the step of forming contact layer includes：Form nitridation titanium
The contact layer of material.
7. the forming method as described in claim 4,5 or 6, which is characterized in that
The step of forming barrier layer includes：The barrier layer is formed by the way of physical vapour deposition (PVD)；
The step of forming contact layer includes：The contact layer is formed by the way of physical vapour deposition (PVD).
8. forming method as described in claim 1, which is characterized in that the step of forming catalyst layer includes：
Form the catalyst layer of cobalt material.
9. the forming method as described in claim 1 or 8, which is characterized in that the step of forming catalyst layer includes：Using laser
The mode of ablation forms the catalyst layer.
10. forming method as described in claim 1, which is characterized in that after the step of forming catalyst layer, described in removal
Before the step of material layer and the catalyst layer positioned at material surface, further include：
The substrate and catalyst layer are made annealing treatment.
11. forming method as described in claim 1, which is characterized in that carbon nanotubes material is formed on remaining catalyst layer
The step of conductive plunger of material, includes：
The mode of using plasma enhancing chemical vapor deposition forms the conductive plunger of the carbon nano-tube material.
12. forming method as described in claim 1, which is characterized in that removal part interlayer dielectric layer, to expose carbon nanotubes
The step of conductive plunger of material, includes：
Part interlayer dielectric layer is removed by flatening process, makes leading for remaining interlayer dielectric layer and the carbon nano-tube material
The surface of electric plug flushes.
13. forming method as described in claim 1, which is characterized in that the step of forming interlayer dielectric layer includes：
Form the interlayer dielectric layer that k values are less than 3.
14. the forming method as described in claim 1 or 13, which is characterized in that the step of forming interlayer dielectric layer includes：Using
The mode of plasma enhanced chemical vapor deposition forms the interlayer dielectric layer.
15. forming method as claimed in claim 12, which is characterized in that the flatening process is chemical mechanical grinding.
16. forming method as described in claim 1, which is characterized in that the step of providing substrate includes：Shape in the substrate
Into the first connecting portion part；
Being formed in the material layer included through the step of opening of the material layer：
Make the opening positioned at the top of the first connecting portion part.
17. forming method as described in claim 1, which is characterized in that removal part interlayer dielectric layer, to expose carbon nanotubes
After the step of conductive plunger of material, further include：
Second connecting portion part is formed in remaining inter-level dielectric layer surface, and the second connecting portion part is made to be located at the carbon nanometer
Above the conductive plunger of tube material.
18. forming method as claimed in claim 17, which is characterized in that the step of forming second connecting portion part includes：It is formed
The second connecting portion part of copper product.
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| CN102683265A (en) * | 2011-03-15 | 2012-09-19 | 中国科学院微电子研究所 | Method for filling carbon nano tube bundles in TSV (through silicon vias) of silicon interposer |
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| JP5414756B2 (en) * | 2011-09-09 | 2014-02-12 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
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| CN102683265A (en) * | 2011-03-15 | 2012-09-19 | 中国科学院微电子研究所 | Method for filling carbon nano tube bundles in TSV (through silicon vias) of silicon interposer |
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