CN105304436A - Directly heated cathode and preparation method thereof - Google Patents

Directly heated cathode and preparation method thereof Download PDF

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CN105304436A
CN105304436A CN201510756121.3A CN201510756121A CN105304436A CN 105304436 A CN105304436 A CN 105304436A CN 201510756121 A CN201510756121 A CN 201510756121A CN 105304436 A CN105304436 A CN 105304436A
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direct
preparation
heated cathode
cathode
tungsten
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CN105304436B (en
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漆世锴
王小霞
罗积润
胡明炜
赵青兰
李云
张琪
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Abstract

The invention discloses a directly heated cathode. A refractory oxide containing Y2O3 is adopted as an active substance; and the active substance is subjected to dip-coating on the surface of a pure tungsten filament cathode of which the surface is provided with a tungsten sponge layer to form the directly heated cathode. The invention further discloses a preparation method of the directly heated cathode. According to the directly heated cathode disclosed by the invention, the thermal emission current density of the pure tungsten filament cathode is greatly improved; and the working lifetime of the cathode is prolonged, so that the working lifetime of a high-power continuous wave magnetron is prolonged.

Description

Direct-heated cathode and preparation method thereof
Technical field
The present invention relates to electric vacuum technology field, relate more specifically to a kind of direct-heated cathode and preparation method thereof, this negative electrode adopts containing rare earth oxide Y 2o 3refractory oxides active material, compared to pure tungsten wire cathode, can reduce the working temperature of negative electrode, improves the emission of negative electrode, extends the life-span of negative electrode.
Background technology
Along with magnetron is towards high-output power future development, ordinary oxide negative electrode, barium-tungsten dispense cathode etc. because of its can not be high pressure resistant, the bombardment of not resistance to electronic and ionic, is easy to that the shortcomings such as electric spark occur and almost can not applies.Therefore, in middle power (being less than 3kW) magnetron, all adopt the thoriated tungsten cathode of carbonization.And directly-heated type pure tungsten (W) wire cathode that general employing emissive power is very little in the high power CW ripple magnetron pipe of high anode voltage (being greater than 10kV), this is because pure tungsten wire cathode is compared to ordinary oxide negative electrode and barium-tungsten dispense cathode, there is launch stability good, resistance to electronics, Ions Bombardment ability are strong, the advantages such as anti-Poisoning is strong, compared to carbonized thoriated tungsten carthode, have the longer life-span.But, at high power CW ripple magnetron in guarantee normal output power situation, its negative electrode is generally operational between 2450 ~ 2700K temperature, its cathode surface is caused to evaporate too fast, when the diameter of negative electrode lower than initial diameter 90% time, namely declare that cathode life ends, therefore in continuous wave magnetron, the termination in pure W wire cathode life-span is the one of the main reasons causing magnetron life to terminate.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of direct-heated cathode and preparation method thereof, to improve the life-span of the emission of negative electrode, the working temperature reducing pure tungsten wire cathode, prolongation negative electrode.
To achieve these goals, the invention provides a kind of preparation method of direct-heated cathode, it is characterized in that, comprise the following steps:
A, evenly apply tungsten powder layer at tungsten filament substrate surface, at being placed in high temperature hydrogen furnace 1600 DEG C ± 50 DEG C, insulation formed tungsten spongy layer after 10 ~ 15 minutes;
B, by Y 2o 3, Gd 2o 3, HfO 2(45 ~ 50) % by weight percentage: (5 ~ 10) %: the obtained Y of (45 ~ 50) % ball milling mixing 2o 3, Gd 2o 3and HfO 2mixed-powder, and be pressed into bulk;
C, the block that step b obtains is put into Muffle furnace, in 1450 ± 50 DEG C of sintering 2 ~ 4 hours, synthesis was containing Y 2o 3refractory oxides active material;
D, step c is obtained containing Y 2o 3refractory oxides block grinding 2 ~ 3 hours;
E, steps d is obtained containing Y 2o 3refractory oxides active material be evenly applied to tungsten spongy layer surface be prepared into required direct-heated cathode.
And, a kind of direct-heated cathode prepared by the preparation method of above-mentioned direct-heated cathode.
Known based on technique scheme, preparation method of the present invention can improve the emission of pure tungsten wire cathode, the working temperature reducing pure tungsten wire cathode, reduction cathode surface evaporation rate, extend cathode life.Containing Y 2o 3sinter the memory space that one deck tungsten spongy layer can not only increase active material between refractory oxides active material layer and the substrate of pure tungsten silk, and the conductance between the substrate of pure tungsten silk and coating layer of active substance can be increased.Adopt the HfO that fusing point is higher 2can ensure that active material at high temperature still has lower evaporation rate.In addition, containing Y 2o 3refractory oxides material has good activity, and pure tungsten wire cathode can be made just to obtain larger emission at a lower temperature, meanwhile, this containing Y 2o 3refractory oxides active material is compared to ordinary oxide, and barium-tungsten dispense cathode and thoriated-tungsten cathode have larger resistance to electronics, Ions Bombardment and anti-poisoning capability, is a kind of being suitable for be operated in the ideal cathode material in high power CW ripple magnetron environment.
Accompanying drawing explanation
Fig. 1 is the preparation flow of high power CW ripple magnetron with common pure tungsten wire cathode
Fig. 2 is that the present invention contains Y 2o 3preparation method's flow chart of oxide active material layer tungsten cathode;
Fig. 3 is directly-heated type low temperature high current-density cathodes structural representation of the present invention;
Fig. 4 is the DC voltage current characteristic curve synoptic diagram of directly-heated type low temperature high current-density cathodes of the present invention;
Fig. 5 is the life curve schematic diagram of directly-heated type low temperature high current-density cathodes of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
The invention discloses a kind of direct-heated cathode, it adopts containing rare earth oxide Y 2o 3refractory oxides as active material, by this active material dip-coating on surface be tungsten spongy layer pure tungsten wire cathode surface.Directly-heated type low temperature high current-density cathodes of the present invention can work at low temperatures, and the life-span of this negative electrode at present on life-span platform is more than 3000 hours.
The invention also discloses a kind of preparation method of direct-heated cathode, comprise the following steps:
A, on tungsten filament substrate surface evenly sprays after tungsten powder layer, at putting into high temperature hydrogen furnace 1600 ± 50 DEG C, insulation forms the tungsten spongy layer with deposit active material ability after 10 ~ 15 minutes;
B, by Y 2o 3, Gd 2o 3, HfO 2(45 ~ 50) % by weight percentage: (5 ~ 10) %: the obtained Y of (45 ~ 50) % ball milling mixing 2o 3, Gd 2o 3and HfO 2mixed-powder, and be pressed into bulk;
C, the block that step b obtains put into Muffle furnace in 1450 ± 50 DEG C of sintering 2 ~ 4 hours, synthesis is containing Y 2o 3refractory oxides active material;
D, step c is obtained containing Y 2o 3refractory oxides block grind 2 ~ 3 hours in agate alms bowl, be prepared into active material;
E, steps d is obtained containing Y 2o 3the even dip-coating of active material of refractory oxides prepares described direct-heated cathode on tungsten spongy layer surface.
Wherein, the purity of the tungsten powder in step a is 99.9%, and average grain diameter is 1 ~ 3 μm.
Wherein, in the sintering process of the tungsten spongy layer in step a, during intensification, within 0.5 ~ 1 hour consuming time, linearly rise to 1600 ± 50 DEG C from normal temperature, in 1600 ± 50 DEG C of insulations cooling after 10 ~ 15 minutes, during cooling, within 2 ~ 4 hours consuming time, be linearly down to normal temperature from 1600 ± 50 DEG C.
Wherein, the ball milling in step b carries out in agate jar, and add in agate tank and analyze pure absolute ethyl alcohol or deionized water, compacting behind mixing and ball milling≤24 hour.
Wherein, the Y in step b 2o 3, Gd 2o 3, HfO 2the purity of three kinds of oxides is 99.9%, and its percentage by weight is respectively (45 ~ 50) %: (5 ~ 10) %: (45 ~ 50) %.
Wherein, analyze the addition of pure absolute ethyl alcohol or deionized water, for agate tank volume≤2/3.
Wherein, in step c, sintering atmosphere is air atmosphere or CO 2atmosphere.
Wherein, the grinding in steps d carries out in agate alms bowl, mixing and ball milling≤3 hour.
Wherein, in step e dip-coating containing Y 2o 3the active material thickness of refractory oxides is 10 ~ 100 μm.
Fig. 1 is the preparation flow figure of the tungsten cathode of prior art, Fig. 2 is of the present invention containing Y 2o 3the preparation flow figure of the tungsten cathode of oxide active material layer, both relatively can find out that inventive point of the present invention is the last two steps.As a preferred embodiment, the invention discloses a kind of method preparing directly-heated type low temperature high current-density cathodes, the steps include: to choose purity to be 99.9wt% particle mean size the be Y of 2 ~ 10 μm 2o 3, Gd 2o 3, HfO 2by weight percentage for putting into the agate tank of dribbling after (45 ~ 50) %: (5 ~ 10) %: (45 ~ 50) % mixing.In agate tank, pour the pure absolute ethyl alcohol of analysis or the deionized water of 2/3 volume into, on ball mill, ball milling mixes more than 24 hours, mixes.Above-mentioned suspension-turbid liquid is poured under being placed in infrared lamp in measuring cup, dry the powder obtaining and mix, and powder is put into mould, with 40kgf/cm on hydraulic press 2it is 10mm that pressure makes diameter, and height is the pie shape of 1 ~ 2mm; Cake block is put into high temperature muffle furnace, passes into air or CO 2gas sinters, and sintering temperature is 1450 ± 50 DEG C, temperature retention time 2 ~ 4 hours.
On tungsten filament substrate surface evenly sprays after tungsten powder layer, at putting into high temperature hydrogen furnace 1600 ± 50 DEG C, insulation formed tungsten spongy layer after 10 ~ 15 minutes.Then, Y is contained by what sinter 2o 3refractory oxides cake block is put into agate alms bowl and is carried out grinding more than 2 hours, till being ground to suitable particles size, obtains active material; This active material is evenly sprayed the preparation completing directly-heated type low temperature high current-density cathodes on tungsten spongy layer surface.The structure of the direct-heated cathode of the present invention prepared as shown in Figure 3.
Tungsten cathode of the present invention is loaded in cylindrical shape anode vacuum diode, after 500 DEG C of insulations in 1 ~ 1.5 hour, degas under 50 ~ 60mA high-frequency current 5 ~ 10 minutes, degas under 80 ~ 120mA high-frequency current 2 ~ 5 minutes, now system vacuum is better than 10 -5pa.Through degassing, activating and carrying out DC voltage current characteristic test after seasoned 10 hours.Leucoscope target temperature is adopted to measure in test.Test result as shown in Figure 4.
This containing Y as can be seen from Figure 4 2o 3refractory oxides active material W wire cathode cathode temperature 1300 DEG C, 1400 DEG C, 1500 DEG C time Cathode DC deviation point emission be respectively 0.4A/cm 2, 1.0A/cm 2, 4.0A/cm 2, the emission of pure W wire cathode under the same terms.Cathode DC deviation point emission when cathode temperature is 1600 DEG C, 1700 DEG C is greater than 7.74A/cm respectively 2, 10.5A/cm 2, demonstrate this negative electrode and there is powerful heat emission ability.
The vacuum diode that tungsten cathode of the present invention is housed after DC voltage current characteristic tests is inserted life-span platform and carries out life test, test result as shown in Figure 5.Fig. 5 is this negative electrode is 1600 DEG C in brightness temperature, initial transmissions current density 1.5A/cm 2time life curve.As can be seen from Figure 5 this negative electrode life-span is under these conditions more than 3000 hours, and cathode life, still in proceeding, can know that from Fig. 5 it is drawn current density and is still not less than 1.5A/cm when after this negative electrode 3000 hours life at present 2, illustrating that this cathode life performance has reached the requirement of high power magnetron to practical cathode life, is a kind of novel directly-heated type low temperature high current-density cathodes.In addition, in the life of negative electrode, the working temperature of negative electrode remains on about 1600 DEG C always, does not monitor this negative electrode and occurs the phenomenons such as sparking, illustrate that this negative electrode has higher job stability.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. a preparation method for direct-heated cathode, is characterized in that, comprises the following steps:
A, evenly apply tungsten powder layer at tungsten filament substrate surface, at being placed in high temperature hydrogen furnace 1600 DEG C ± 50 DEG C, insulation formed tungsten spongy layer after 10 ~ 15 minutes;
B, by Y 2o 3, Gd 2o 3, HfO 2(45 ~ 50) % by weight percentage: (5 ~ 10) %: the obtained Y of (45 ~ 50) % ball milling mixing 2o 3, Gd 2o 3and HfO 2mixed-powder, and be pressed into bulk;
C, the block that step b obtains is put into Muffle furnace, in 1450 ± 50 DEG C of sintering 2 ~ 4 hours, synthesis was containing Y 2o 3refractory oxides active material;
D, step c is obtained containing Y 2o 3refractory oxides block grinding 2 ~ 3 hours;
E, steps d is obtained containing Y 2o 3refractory oxides active material be evenly applied to tungsten spongy layer surface be prepared into required direct-heated cathode.
2. the preparation method of direct-heated cathode as claimed in claim 1, it is characterized in that, the tungsten powder purity in described step a is 99.9%, and average grain diameter is 1 ~ 3 μm.
3. the preparation method of direct-heated cathode as claimed in claim 1, it is characterized in that, in described step a in tungsten spongy layer sintering process, during intensification, within 0.5 ~ 1 hour consuming time, linearly rise to 1600 DEG C ± 50 DEG C from normal temperature, in 1600 DEG C ± 50 DEG C insulations cooling after 10 ~ 15 minutes, during cooling, within 2 ~ 4 hours consuming time, be linearly down to normal temperature from 1600 DEG C ± 50 DEG C.
4. the preparation method of direct-heated cathode as claimed in claim 1, it is characterized in that, the ball milling in described step b, is carry out in agate jar, and adds in agate tank and analyze pure absolute ethyl alcohol or deionized water, compacting behind mixing and ball milling≤24 hour.
5. the preparation method of direct-heated cathode as claimed in claim 4, is characterized in that, the addition of the pure absolute ethyl alcohol of described analysis or deionized water, for agate tank volume≤2/3.
6. the preparation method of direct-heated cathode as claimed in claim 1, is characterized in that, the Y in described step b 2o 3, Gd 2o 3, HfO 2the purity of three kinds of oxides is 99.9%, and its percentage by weight is (45 ~ 50) %: (5 ~ 10) %: (45 ~ 50) %.
7. the preparation method of direct-heated cathode as claimed in claim 1, it is characterized in that, in described step c, sintering atmosphere is air atmosphere or CO 2atmosphere.
8. the preparation method of direct-heated cathode as claimed in claim 1, it is characterized in that, the grinding in described steps d, is carry out in agate alms bowl, mixing and ball milling≤3 hour.
9. the preparation method of direct-heated cathode as claimed in claim 1, is characterized in that, in described step e, dip-coating contains Y 2o 3the thickness of refractory oxides active material is 10 ~ 100 μm.
10. the direct-heated cathode prepared by the preparation method of the direct-heated cathode as described in claim 1 to 9 any one.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037007A (en) * 2018-07-03 2018-12-18 九江学院 A kind of preparation method of the directly-heated type cathode of resistance to electron bombardment
CN110615474A (en) * 2019-09-16 2019-12-27 九江学院 Preparation method of hafnate electron emission active substance for hot cathode
CN111850524A (en) * 2020-07-17 2020-10-30 广东威特真空电子制造有限公司 Rare earth tungsten cathode and preparation method and application thereof
CN112798650A (en) * 2020-12-30 2021-05-14 中国科学院空天信息创新研究院 Device and method for testing electron bombardment resistance of cathode

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US3837909A (en) * 1972-07-27 1974-09-24 Itt Coated coil emissive electrode
WO2003075310A1 (en) * 2002-03-05 2003-09-12 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Short arc high-pressure discharge lamp-
CN101091987A (en) * 2006-06-22 2007-12-26 中国科学院电子学研究所 Method for producing spongy body of tungsten
CN101728181A (en) * 2009-12-06 2010-06-09 甘肃虹光电子有限责任公司 Manufacture method of annular barium-tungsten cathode emitter
CN102394208A (en) * 2011-11-02 2012-03-28 北京工业大学 Dipped yttrium oxide-tungsten based yttrium and scandate cathode material and manufacturing method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837909A (en) * 1972-07-27 1974-09-24 Itt Coated coil emissive electrode
WO2003075310A1 (en) * 2002-03-05 2003-09-12 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Short arc high-pressure discharge lamp-
CN101091987A (en) * 2006-06-22 2007-12-26 中国科学院电子学研究所 Method for producing spongy body of tungsten
CN101728181A (en) * 2009-12-06 2010-06-09 甘肃虹光电子有限责任公司 Manufacture method of annular barium-tungsten cathode emitter
CN102394208A (en) * 2011-11-02 2012-03-28 北京工业大学 Dipped yttrium oxide-tungsten based yttrium and scandate cathode material and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037007A (en) * 2018-07-03 2018-12-18 九江学院 A kind of preparation method of the directly-heated type cathode of resistance to electron bombardment
CN110615474A (en) * 2019-09-16 2019-12-27 九江学院 Preparation method of hafnate electron emission active substance for hot cathode
CN111850524A (en) * 2020-07-17 2020-10-30 广东威特真空电子制造有限公司 Rare earth tungsten cathode and preparation method and application thereof
CN112798650A (en) * 2020-12-30 2021-05-14 中国科学院空天信息创新研究院 Device and method for testing electron bombardment resistance of cathode

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