CN105296952A - Substrate temperature control system and method - Google Patents
Substrate temperature control system and method Download PDFInfo
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- CN105296952A CN105296952A CN201510737946.0A CN201510737946A CN105296952A CN 105296952 A CN105296952 A CN 105296952A CN 201510737946 A CN201510737946 A CN 201510737946A CN 105296952 A CN105296952 A CN 105296952A
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Abstract
The invention relates to a substrate temperature control system and method. The substrate temperature control system comprises a vacuum chamber, a sample table, a circulating pipeline, an inert gas source, a water chiller water tank and a control unit, wherein the sample table is used for holding a substrate, is arranged in the vacuum chamber and comprises a heater for heating the substrate; the circulating pipeline is connected with the sample table and comprises an inlet and an outlet; the inert gas source is connected to the inlet of the circulating pipeline through an air inlet valve; the water chiller water tank is connected to the inlet of the circulating pipeline through a water inlet valve; the control unit is electrically connected with the heater, the air inlet valve and the water inlet valve; when the substrate needs to be heated, the air inlet valve is switched on, and the water inlet valve is switched off; and when the substrate needs to be cooled, the water inlet valve is switched on, and the air inlet valve is switched off. The substrate temperature control system can be used for controlling the temperature of the substrate.
Description
Technical field
The present invention relates to a kind of temperature regulating device, more particularly, relate to a kind of substrate temperature controlling system and method.
Background technology
Their use properties can be increased substantially at the surface deposition ganoine thin film of the multiple types of tools such as cutting tool and component, therefore obtain widespread use at the surface deposition film of instrument and component.Physical vapor deposition (PhysicalVaporDeposition, PVD) technology prepares the main method of ganoine thin film.Adopt physical method under vacuum, material source is gasificated into gaseous atom, molecule, or partial ionization becomes ion, and by low-pressure gas or plasma body, at substrate surface deposit film.The process exploitation of PVD, normally adjusting process prepares the ganoine thin film of heterogeneity, microtexture, and then obtains corresponding use properties.
In the hard films of the PVD process deposits extensively adopted, often there is too high unrelieved stress.In order to improve the use properties of film based system, must this residual stress control in rational level.The temperature of substrate is a key factor of the microtexture determining film, and the microtexture of film has the impact of essence to its unrelieved stress, therefore, inquire into substrate temperature to the impact of film microtexture, and then study it, on the impact of film residual stress, there is very high using value.Prepare in the process of ganoine thin film in prior art; usually can heat substrate; but there is no cooling measure; the plasma body that temperature is higher drops on substrate; the temperature of substrate can be caused to be increased to several Baidu specification sheets; according to the Thornton model of classics, depositing temperature has remarkably influenced for the microtexture of film, and then very important to adjustment film performance.Especially, if obtain non-crystal structure by low temperature depositing ganoine thin film, then carry out Amorphous Crystallization, will obtain ganoine thin film that is nanocrystalline, isometric crystal structure, performance obviously can be different from the ganoine thin film of conventional columnar crystal structure.
Summary of the invention
The technical problem to be solved in the present invention is, to prepare in the process of ganoine thin film not to the defect that the temperature of substrate controls, provide a kind of substrate temperature controlling system and method, can control the temperature of substrate for prior art.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of substrate temperature controlling system, comprising:
Vacuum chamber;
For placing the sample table of substrate, be arranged in described vacuum chamber, and comprise the well heater for heating described substrate;
The circulating line be connected with described sample table, includes an inlet and an outlet;
Inert gas source, is connected to the ingress of described circulating line by intake valve;
Cooling-water machine water tank, is connected to the ingress of described circulating line by water intaking valve; And
The control unit be electrically connected with described well heater, intake valve and water intaking valve, when needs are to described substrate heating, open described intake valve and keeps described water intaking valve to close; When needs are lowered the temperature to described substrate, open described water intaking valve and keep described intake valve to close.
According to substrate temperature controlling system of the present invention, described sample table comprises water-cooled chip bench for placing described substrate, for the described well heater that heats described water-cooled chip bench and the mounting seat for fixing described water-cooled chip bench and well heater and for being connected to described vacuum chamber inside, described well heater is arranged between described water-cooled chip bench and described mounting seat, and described substrate temperature controlling system also comprises the arc source be oppositely arranged with described water-cooled chip bench.
According to substrate temperature controlling system of the present invention, on described water-cooled chip bench, be provided with insulation thimble connecting hole; Described sample table also comprises the insulation thimble be plugged in described insulation thimble connecting hole; Described insulation thimble is made up of the material of high thermal conductivity, in described insulation thimble, is fixedly installed temperature sensor.
According to substrate temperature controlling system of the present invention, described sample table also comprises the insulation barrier be arranged between described water-cooled chip bench and described well heater, at the center of described insulation barrier, offers heating radiation hole.
According to substrate temperature controlling system of the present invention, described sample table also comprises the heat reflector be arranged between described well heater and described mounting seat, and described heat reflector has the front openings towards described well heater.
According to substrate temperature controlling system of the present invention, on the left and right sides of described heat reflector, be provided with the multiple recesses for fixing described well heater, the two ends of described well heater are supported in described recess respectively; Described sample table also comprises two well heater mounting blocks in strip, and described well heater mounting block is pressed in the two ends of described well heater respectively, and the two ends of described well heater mounting block are connected respectively on the corresponding side of described heat reflector.
According to substrate temperature controlling system of the present invention, between described insulation barrier and described mounting seat, be also provided with support distance piece, described support distance piece is fixedly connected with the two ends of described well heater, and is fixedly connected with described mounting seat.
According to substrate temperature controlling system of the present invention, described mounting seat is provided with for described sample table being fixed to vertical support pin in described vacuum chamber and horizontal support pin, described horizontal support pin comprises the rotating connector be fixedly connected with described sample table and the horizontal support bar be rotationally connected with described rotating connector.
A kind of substrate temperature control method, for controlling above-described substrate temperature controlling system, said method comprising the steps of:
S1, according to the actual requirements, by target temperature SV
ninput to described control unit;
S2, described control unit compare actual temperature PV and the target temperature SV of the described sample table recorded
n, and output current signal accordingly;
S3, described control unit are determined to the output voltage of described well heater according to described current signal;
Wherein said step S2 comprises:
If actual temperature PV is less than target temperature SV
n, described control unit controls described inlet open, and the rare gas element in described inert gas source enters from described circulating line, closes after continuing predetermined time;
If actual temperature PV is higher than target temperature SV
n, described control unit controls described water intaking valve and opens, and the water coolant in described cooling-water machine water tank is entered by described circulating line, arrives described sample table and cools it.
A kind of substrate temperature control method, for controlling above-described substrate temperature controlling system, said method comprising the steps of:
S1, according to the actual requirements, by each target temperature SV in multiple temperature control stage
1-SV
ninput to described control unit;
S2, described control unit relatively go up a target temperature SV
n-1with next target temperature SV
n, and output current signal accordingly;
S3, described control unit are determined to the output voltage of described well heater according to described current signal;
Wherein said step S2 comprises:
If a upper target temperature SV
n-1be less than next target temperature SV
n, described control unit controls described inlet open, and the rare gas element in described inert gas source enters from described circulating line, closes after continuing predetermined time;
If a upper target temperature SV
n-1higher than next target temperature SV
n, described control unit controls described water intaking valve and opens, and the water coolant in described cooling-water machine water tank is entered by described circulating line, arrives described sample table and cools it.
Implement substrate temperature controlling system of the present invention and method, there is following beneficial effect: accurately can control the temperature of substrate, the sample table at substrate place not only can be made to heat up, can also lower the temperature to it, and then reach the object that the performance of the film of deposition on substrate is controlled.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation of substrate temperature controlling system in the present invention;
Fig. 2 is the structural representation of sample table in the present invention;
Fig. 3 is the decomposing schematic representation of sample table in the present invention;
Fig. 4 is another decomposing schematic representation of sample table in the present invention;
Fig. 5 is the block diagram of an embodiment of substrate temperature controlling system in the present invention;
Fig. 6 is the block diagram of another embodiment of substrate temperature controlling system in the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Fig. 1 is the structural representation of substrate temperature controlling system 100 in the present invention.As shown in Figure 1, substrate temperature controlling system 100 of the present invention comprises: vacuum chamber 101, be arranged in vacuum chamber 101 and comprise the sample table 102 of well heater 108, the circulating line 103 be connected with sample table 102, be connected to by intake valve 104 the entrance 103a place of circulating line 103 inert gas source 105, be connected to by water intaking valve 106 the entrance 103a place of circulating line 103 cooling-water machine water tank 107 and be electrically connected to carry out the control unit 109 controlled with well heater 108, intake valve 104, water intaking valve 106.When needs heat substrate 110, open intake valve 104 and keep water intaking valve 106 to close; When needs are lowered the temperature to substrate 110, open water intaking valve 106 and keep intake valve 104 to close.
Specifically, sample table 102 is arranged in vacuum chamber 101, and substrate 110 is arranged in sample table 102, and vacuum chamber 101 is provided with the arc source 111 relative with sample table 102.Arc source 111 for sputter plasma to substrate 110, thus at substrate 110 deposited on silicon film.
Circulating line 103 extends to vacuum chamber 101 from vacuum chamber 101 outside inner, outside by extending to vacuum chamber 101 after sample table 102 again, to cool sample table 102.Circulating line 103 comprises entrance 103a and outlet 103b, inert gas source 105 is connected to the entrance 103a place of circulating line 103 by intake valve 104, cooling-water machine water tank 107 is also connected to the entrance 103a place of circulating line 103 by water intaking valve 106, the outlet 103b of circulating line 103 is connected to cooling-water machine water tank 107, to re-start cooling to the water flowed out.But the present invention is not limited thereto, the outlet 103b of circulating line 103 also can be free of attachment to cooling-water machine water tank 107, and directly the water flowed out is reclaimed.Intake valve 104 and water intaking valve 106 are generally in closing condition.
In order to keep vacuum chamber 101 for vacuum, vacuum chamber 101 is provided with isolated flange 112.Circulating line 103 passes through and is fixed on isolated flange 112 from isolated flange 112, those skilled in the art may appreciate that, because circulating line 103 is circulating, so pass through according to two places of loop direction respectively on isolated flange 112 and fix.
When the temperature of sample table 102 is too high need cooling time, control unit 109 controls water intaking valve 106 and opens, and the water in cooling-water machine water tank 107 enters from the entrance 103a of circulating line 103, arrives sample table 102 and cools it, get back to afterwards in cooling-water machine water tank 107, again cooled by cooling-water machine.After reaching the temperature of expectation, control unit 109 controls water intaking valve 106 and closes.When the temperature of sample table 102 is too low need heating time, control unit 109 controls intake valve 104 and opens, and the rare gas element in inert gas source 105 enters from the entrance 103a of circulating line 103, and the water in circulating line 103 blows away by rare gas element.When this is the boiling point in order to prevent Heating temperature higher than water, water residual in circulating line 103 can become water vapour, the pressure in circulating line 103 is increased fast, even cause and break, and causes disadvantageous effect to heating; Can also prevent current residual in circulating line 103 from taking away heat, reducing temperature rise rate simultaneously.After the time of presetting opened by intake valve 104, the water in circulating line 103 is enough to be blown away, and control unit 109 closes intake valve 104.
Fig. 2 is the structural representation of sample table 102 in the present invention; Fig. 3 is the decomposing schematic representation of sample table 102 in the present invention; Fig. 4 is another decomposing schematic representation of sample table 102 in the present invention.As in Figure 2-4, sample table 102 comprises water-cooled chip bench 113 for placing substrate 110, for the well heater 108 that heats water-cooled chip bench 113 and the mounting seat 109 for fixing water-cooled chip bench 113 and well heater 108 and for being connected to vacuum chamber 101 inside.
Specifically, water-cooled chip bench 113 is made up of the metal that thermal conductivity is good, preferably copper.In water-cooled chip bench 113, be provided with sinuous cooling duct (not shown), this cooling duct is connected on circulating line 103 by water-cooled inlet tube 114 and water-cooled outlet pipe 115.Water in circulating line 103 or rare gas element enter the cooling duct in water-cooled chip bench 113 by water-cooled inlet tube 114, are flowed out afterwards by water-cooled outlet pipe 115, and get back to outlet 103b by circulating line 103.
On the front surface of water-cooled chip bench 113 just to arc source 111, be provided with substrate clamping part 116.This substrate clamping part 116 is two clamp clips be detachably connected on water-cooled chip bench 113.Be placed into by substrate 110 after on water-cooled chip bench 113, substrate clamping part 116 is fastened on the edge of substrate 110 by employing screw etc., and substrate 110 is close on water-cooled chip bench 113.
In the side of water-cooled chip bench 113, be provided with bias plasma connecting hole 117.In order to measure the temperature of water-cooled chip bench 113 and not be subject to the impact of the bias voltage on water-cooled chip bench 113, the end face of water-cooled chip bench 113 is provided with insulation thimble connecting hole 113a, and insulation thimble 120 is plugged in insulation thimble connecting hole 113a by shrink-fit.In insulation thimble 120, be fixedly installed temperature sensor 130, this temperature sensor 130 is insulated by insulation thimble 120 and water-cooled chip bench 113.Temperature sensor 130 can be thermopair.Insulation thimble 120 stupalith that preferably thermal conductivity is higher, such as beryllium oxide ceramics, aluminium nitride ceramics etc., can conduct rapidly the heat of water-cooled chip bench 113, the temperature that temperature sensor 130 is recorded closely or equal the temperature of water-cooled chip bench 113.
On water-cooled chip bench 113, be also provided with multiple water-cooled chip bench connecting hole 118.This water-cooled chip bench connecting hole 118 runs through water-cooled chip bench 113.
Well heater 108 is arranged between water-cooled chip bench 113 and mounting seat 109.In this embodiment, well heater 108 is many red heat fluorescent tubes that side by side parallel is arranged, but well heater 108 also can be other form.Between well heater 108 and water-cooled chip bench 113, be provided with insulation barrier 119.Insulation barrier 119 makes water-cooled chip bench 113 and other element insulating, and this insulation barrier 119 is preferably made up of pottery.In order to not hinder well heater 108 pairs of water-cooled chip bench 113 to heat, at the center of insulation barrier 119, offering heating radiation hole 119b, insulation barrier 119 is also provided with insulation barrier connecting hole 119a.The size of this heating radiation hole 119b is comparatively large, is enough to make most heat direct radiations of well heater 108 on water-cooled chip bench 113.Insulation barrier 119 can be made up of such as pottery.
In order to the reflect heat sent by well heater 108 is to the direction at water-cooled chip bench 113 place, between well heater 108 and mounting seat 109, be provided with heat reflector 121.In the present embodiment, this heat reflector 121 is the cube shaped of front openings, and it is towards the front openings of well heater 108.On the internal surface of heat reflector 121, be coated with metallic reflector.Heat reflector 121 can be made of metal.On the left and right sides of heat reflector 121, be provided with the multiple recess 121a for fixed heater 108 and mounting block connecting hole 121b.In the present embodiment, in a tubular form, the two ends of multiple well heater 108 are supported in the corresponding recess 121a of the left and right sides of heat reflector 121 well heater 108 respectively.Water-cooled chip bench 113 also comprises two well heater mounting blocks 122, this well heater mounting block 122 is in strip, comprise middle narrow portion 122a and from the two ends of middle narrow portion 122a towards the wide portion 122b in two ends that the direction at mounting seat 109 place extends, wherein the wide portion 122b in two ends is provided with connecting hole.The middle narrow portion 122a of two well heater mounting blocks 122 is pressed in the two ends of multiple well heater 108 respectively, and wide portion, two ends 122b connects with the mounting block connecting hole 121b of the corresponding side of heat reflector 121 respectively by web member, thus well heater 108 is fixed on heat reflector 121.
In the illustrated embodiment in which, the quantity of heat reflector 121 is multiple, and is specially three.The structure of this multiple heat reflector 121 is identical, but outside dimension diminishes successively, and nested successively.Owing to have employed multiple heat reflector 121, heat can be controlled well.But the present invention is not limited thereto, also only can adopt a heat reflector 121.
At the back side of insulation barrier 119 away from water-cooled chip bench 113, be fixedly installed multiple joint pin 123.The end of joint pin 123 is provided with outside screw, and the outside surface of joint pin 123 is arranged with insulation thimble.In the back surface of heat reflector 121 away from insulation barrier 119, be provided with the connecting hole run through.The joint pin 123 of insulation barrier 119 through the connecting hole on heat reflector 121, and adopts nut to be connected with the outside screw of joint pin 123 end, thus heat reflector 121 is fixed on insulation barrier 119.
In order to support well heater 108, between insulation barrier 119 and mounting seat 109, also be provided with and supporting distance piece 124.Support the left and right sides that distance piece 124 is positioned at heat reflector 121.On support distance piece 124, be provided with well heater connecting hole 125 and mounting seat connecting hole 126.The two ends of well heater 108 are supported in the corresponding recess 121a of the left and right sides of heat reflector 121 respectively, and extend to support distance piece 124 place, are provided with connecting hole 108a at the two ends of well heater 108.Adopt web member through after the connecting hole 108a of well heater 108, be connected with the well heater connecting hole 125 supported on distance piece 124.Adopt web member through mounting seat 109 in addition, and be connected with the mounting seat connecting hole 126 supported on distance piece 124, thus support distance piece 124 is fixed in mounting seat 109.
Sample table 102 also comprises successively through the long web member 127 be connected with mounting seat 109 after the water-cooled chip bench connecting hole 118 on water-cooled chip bench 113, insulation barrier connecting hole 119a on insulation barrier 119.The nut that long web member 127 can be thru-bolt and coordinate with its end.Make water-cooled chip bench 113, insulation barrier 119 and mounting seat 109 sequentially connect like this, and well heater 108 and heat reflector 121 are fixed between insulation barrier 119 and mounting seat 109.In order to insulate, be arranged with insulation covering in long web member 127 periphery.
At the back side of mounting seat 109, be provided with vertical support pin 128 and horizontal support pin 129.This vertical support pin 128 and horizontal support pin 129 are for being fixed to whole sample table 102 in vacuum chamber 101.The vertical support bar 128b that this vertical support pin 128 comprises L shape contiguous block 128a and is connected with L shape contiguous block 128a.Wherein the first part of L shape contiguous block posts the back side being fixed on mounting seat 109, and second section is connected with vertical support bar 128b is vertical.Horizontal support pin 129 comprises the web plate 129a posting the back side being fixed on mounting seat 109, the horizontal support bar 129c being connected to the rotating connector 129b on web plate 129 and being connected with rotating connector 129b, wherein the quantity of rotating connector 129b is two, both are from web plate 129a extension and toward each other, rotating connector 129b is equipped with and is rotationally connected hole 129d and around the arcuate socket 129e being rotationally connected hole 129d.The end of horizontal support bar 129e be rotationally connected hole 129d and be connected rotationally, simultaneously, horizontal support bar 129c is provided with the small convex pillar (not shown) coordinated with arcuate socket 129e, when horizontal support bar 129c rotates, small convex pillar slides in arcuate socket 129e, by means of the rotational angle of the length range limit levels support bar 129c of arcuate socket 129e.
When sample table 102 inserts the corresponding fixed orifices in vacuum chamber 101 by means of vertical support pin 128 and horizontal support pin 129, sample table 102 can be rotated in the horizontal direction according to the position of arc source 111, make sample table 102 just to electric arc edge 111.
Fig. 5 is the block diagram of an embodiment of substrate temperature controlling system 100 in the present invention; Fig. 6 is the block diagram of another embodiment of substrate temperature controlling system 100 in the present invention.Substrate temperature control method utilizes substrate temperature controlling system 100 of the present invention.Wherein control unit 109 can comprise temperature controller 109a and power regulator 109b.Under the working order of substrate temperature controlling system 100, well heater 108 1 direct-open.This substrate temperature control method is applicable to comprise the situation in single temperature control stage and comprise the situation in multiple temperature control stage, in this multiple temperature control stage, in the time that different constant temperature is different.
Specifically, when the single temperature control stage, this substrate temperature control method comprises step:
S1, according to the actual requirements, by target temperature SV
ninput to temperature controller 109a;
The actual temperature PV that S2, temperature controller 109a C.T. sensor 130 record and target temperature SV
n, and output current signal is to power regulator 109b accordingly, this current signal can be the current signal of 4-10mA;
S3, power regulator 109b are determined to the output voltage of well heater 108 according to current signal, this output voltage is the actual voltage value of well heater 108, are the alternating-current of 0-220V.
Wherein step S2 comprises further:
If actual temperature PV is less than target temperature SV
n, show to need heat temperature raising, now control unit 109 controls intake valve 104 and opens, and the rare gas element in inert gas source 105 enters from the entrance of circulating line 103, and the water in circulating line 103 blows away by rare gas element.Close after continuing predetermined time.This predetermined time can be such as 10 seconds.
If actual temperature PV is higher than target temperature SV
n, show that needs cool, now control unit 109 controls water intaking valve 106 and opens, and the water coolant in cooling-water machine water tank 107 is entered by circulating line 103, arrives sample table 102 and also cools it, get back to afterwards in cooling-water machine water tank 107.The process cooled can at whole temperature control phase lasts.
When comprising multiple (such as N number of) temperature control stage, this substrate temperature control method comprises step:
S1, according to the actual requirements, by each target temperature SV in multiple temperature control stage
1-SV
ntemperature controller 109a is inputed to the time length of correspondence;
S2, temperature controller 109a relatively go up a target temperature SV
n-1with next target temperature SV
n, and output current signal is to power regulator 109b accordingly, this current signal can be the current signal of 4-10mA;
S3, power regulator 109b are determined to the output voltage of well heater 108 according to current signal, this output voltage is the actual voltage value of well heater 108, are the alternating-current of 0-220V.
Wherein step S2 comprises further:
If next target temperature SV
nbe less than a target temperature SV
n-1, show to need heat temperature raising, now control unit 109 controls intake valve 104 and opens, and the rare gas element in inert gas source 105 enters from the entrance of circulating line 103, and the water in circulating line 103 blows away by rare gas element.Close after continuing predetermined time.This predetermined time can be such as 10 seconds.
If next target temperature SV
nhigher than a upper target temperature SV
n-1, show that needs cool, now control unit 109 controls water intaking valve 106 and opens, and the water coolant in cooling-water machine water tank 107 is entered by circulating line 103, arrives sample table 102 and also cools it, get back to afterwards in cooling-water machine water tank 107.The process cooled can at whole temperature control phase lasts.
Adopt substrate temperature controlling system 100 of the present invention and method, accurately can control the temperature of substrate 110, the sample table 102 at substrate 110 place not only can be made to heat up, can also lower the temperature to it, and then reach the object that the performance of the film of deposition on substrate 110 is controlled.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a substrate temperature controlling system, is characterized in that, comprising:
Vacuum chamber;
For placing the sample table of substrate, be arranged in described vacuum chamber, and comprise the well heater for heating described substrate;
The circulating line be connected with described sample table, includes an inlet and an outlet;
Inert gas source, is connected to the ingress of described circulating line by intake valve;
Cooling-water machine water tank, is connected to the ingress of described circulating line by water intaking valve; And
The control unit be electrically connected with described well heater, intake valve and water intaking valve, when needs are to described substrate heating, open described intake valve and keeps described water intaking valve to close; When needs are lowered the temperature to described substrate, open described water intaking valve and keep described intake valve to close.
2. substrate temperature controlling system according to claim 1, it is characterized in that, described sample table comprises water-cooled chip bench for placing described substrate, for the described well heater that heats described water-cooled chip bench and the mounting seat for fixing described water-cooled chip bench and well heater and for being connected to described vacuum chamber inside, described well heater is arranged between described water-cooled chip bench and described mounting seat, and described substrate temperature controlling system also comprises the arc source be oppositely arranged with described water-cooled chip bench.
3. substrate temperature controlling system according to claim 2, is characterized in that, on described water-cooled chip bench, is provided with insulation thimble connecting hole; Described sample table also comprises the insulation thimble be plugged in described insulation thimble connecting hole; Described insulation thimble is made up of the material of high thermal conductivity, in described insulation thimble, is fixedly installed temperature sensor.
4. substrate temperature controlling system according to claim 2, is characterized in that, described sample table also comprises the insulation barrier be arranged between described water-cooled chip bench and described well heater, at the center of described insulation barrier, offers heating radiation hole.
5. substrate temperature controlling system according to claim 4, is characterized in that, described sample table also comprises the heat reflector be arranged between described well heater and described mounting seat, and described heat reflector has the front openings towards described well heater.
6. substrate temperature controlling system according to claim 5, is characterized in that, on the left and right sides of described heat reflector, be provided with the multiple recesses for fixing described well heater, the two ends of described well heater are supported in described recess respectively; Described sample table also comprises two well heater mounting blocks in strip, and described well heater mounting block is pressed in the two ends of described well heater respectively, and the two ends of described well heater mounting block are connected respectively on the corresponding side of described heat reflector.
7. substrate temperature controlling system according to claim 6, it is characterized in that, between described insulation barrier and described mounting seat, be also provided with support distance piece, described support distance piece is fixedly connected with the two ends of described well heater, and is fixedly connected with described mounting seat.
8. substrate temperature controlling system according to claim 2, it is characterized in that, described mounting seat is provided with for described sample table being fixed to vertical support pin in described vacuum chamber and horizontal support pin, described horizontal support pin comprises the rotating connector be fixedly connected with described sample table and the horizontal support bar be rotationally connected with described rotating connector.
9. a substrate temperature control method, for controlling substrate temperature controlling system as claimed in claim 1, is characterized in that, said method comprising the steps of:
S1, according to the actual requirements, by target temperature SV
ninput to described control unit;
S2, described control unit compare actual temperature PV and the target temperature SV of the described sample table recorded
n, and output current signal accordingly;
S3, described control unit are determined to the output voltage of described well heater according to described current signal;
Wherein said step S2 comprises:
If actual temperature PV is less than target temperature SV
n, described control unit controls described inlet open, and the rare gas element in described inert gas source enters from described circulating line, closes after continuing predetermined time;
If actual temperature PV is higher than target temperature SV
n, described control unit controls described water intaking valve and opens, and the water coolant in described cooling-water machine water tank is entered by described circulating line, arrives described sample table and cools it.
10. a substrate temperature control method, for controlling substrate temperature controlling system as claimed in claim 1, is characterized in that, said method comprising the steps of:
S1, according to the actual requirements, by each target temperature SV in multiple temperature control stage
1-SV
ninput to described control unit;
S2, described control unit relatively go up a target temperature SV
n-1with next target temperature SV
n, and output current signal accordingly;
S3, described control unit are determined to the output voltage of described well heater according to described current signal;
Wherein said step S2 comprises:
If a upper target temperature SV
n-1be less than next target temperature SV
n, described control unit controls described inlet open, and the rare gas element in described inert gas source enters from described circulating line, closes after continuing predetermined time;
If a upper target temperature SV
n-1higher than next target temperature SV
n, described control unit controls described water intaking valve and opens, and the water coolant in described cooling-water machine water tank is entered by described circulating line, arrives described sample table and cools it.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106555175A (en) * | 2016-10-27 | 2017-04-05 | 合肥优亿科机电科技有限公司 | A kind of high-density plasma reinforced chemical vapor deposition apparatus |
| CN106987808A (en) * | 2017-05-15 | 2017-07-28 | 成都西沃克真空科技有限公司 | A kind of coating machine substrate heater |
| CN110499492A (en) * | 2019-09-19 | 2019-11-26 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and its evaporation coating method |
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| CN205368490U (en) * | 2015-11-03 | 2016-07-06 | 深圳职业技术学院 | Substrate temperature control system |
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| EP0297521A1 (en) * | 1987-07-02 | 1989-01-04 | Fujitsu Limited | High temperature heating sputtering process |
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| CN205368490U (en) * | 2015-11-03 | 2016-07-06 | 深圳职业技术学院 | Substrate temperature control system |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106555175A (en) * | 2016-10-27 | 2017-04-05 | 合肥优亿科机电科技有限公司 | A kind of high-density plasma reinforced chemical vapor deposition apparatus |
| CN106987808A (en) * | 2017-05-15 | 2017-07-28 | 成都西沃克真空科技有限公司 | A kind of coating machine substrate heater |
| CN106987808B (en) * | 2017-05-15 | 2019-04-09 | 成都西沃克真空科技有限公司 | A kind of coating machine substrate heating device |
| CN110499492A (en) * | 2019-09-19 | 2019-11-26 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and its evaporation coating method |
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|---|---|
| CN105296952B (en) | 2017-08-15 |
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