CN105293426A - Sensor package and method of manufacturing the same - Google Patents
Sensor package and method of manufacturing the same Download PDFInfo
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- CN105293426A CN105293426A CN201510106739.5A CN201510106739A CN105293426A CN 105293426 A CN105293426 A CN 105293426A CN 201510106739 A CN201510106739 A CN 201510106739A CN 105293426 A CN105293426 A CN 105293426A
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- upper cover
- pedestal
- electrode
- sensor package
- combination member
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
The present invention provides a sensor package and a method of manufacturing the same. The sensor package comprises a substrate arranged in the mass body of an inner space of the substrate and having at least one electrode; an upper cover combined to the surface of the surface to seal the space of the quality body; and a combination member formed by polymer materials and configured to combine the substrate and the upper cover.
Description
This application claims priority and the rights and interests of the 10-2014-0074747 korean patent application submitted in Korean Intellectual Property Office on June 19th, 2014, the disclosure of this application is contained in this by reference.
Technical field
The disclosure relates to one to be had the sensor package of MEMS (MEMS) sensor and manufactures the method for this sensor package.
Background technology
Acceleration transducer has been widely used in various industrial circle (such as, robotics, various precision apparatus fields etc.), recently, the demand for the semiconductor acceleration sensor utilizing MEMS (MEMS) technology increases rapidly.
Usually, semiconductor acceleration sensor has such structure: the mass body forming sensor element is accommodated in the inner space of ceramic package.In addition, in order to protect this mass body, this space of closed with covers is used.
According in the semiconductor acceleration sensor of prior art, usually, utilize metal bond or eutectic bond agent that lid is attached to package body.But, due at high temperature manufacture process should be performed when above-mentioned bonding agent, therefore manufacture process meeting relative complex, and product reliability can be reduced due to high temperature.
[relate art literature]
(patent document 1) 2001-337105 Japanese Patent Laid-Open
Summary of the invention
One side of the present disclosure can provide a kind of sensor package that easily can manufacture with low temperature process and the method manufacturing this sensor package.
According to one side of the present disclosure, a kind of sensor package can comprise: pedestal, comprises the mass body that is arranged in the inner space being formed in described pedestal and has the surface that at least one electrode is formed thereon; Upper cover, is attached to a surface of described pedestal, to close the space being provided with mass body; Combination member, is formed by polymeric material and described pedestal and described upper cover is bonded to each other.
Here, the first side surface of described upper cover can comprise: the first inclined surface, is formed as vertical with the upper surface of upper cover; Second inclined surface, from the lower end of described first inclined surface towards electrode to downward-extension.
According to another aspect of the present disclosure, the method manufacturing sensor package can comprise: prepare a pedestal, and described pedestal comprises the mass body that is arranged in the inner space being formed in described pedestal and has the surface that at least one electrode and wiring pattern be formed thereon; Polymeric material is utilized to form combination member in semiconductor processing on a surface of described pedestal; Upper cover is attached to described combination member.
Described sensor package is manufactured by MEMS (MEMS) process.
Accompanying drawing explanation
By the detailed description of carrying out below in conjunction with accompanying drawing, above and other aspect of the present disclosure, other advantages of characteristic sum will clearly be understood, in the accompanying drawings:
Fig. 1 is the sectional view of the sensor package schematically shown according to exemplary embodiment of the present disclosure;
Fig. 2 is the decomposition diagram of the sensor package shown in Fig. 1;
Fig. 3 to Fig. 8 is for describing the view manufactured according to the method for the sensor package of this exemplary embodiment.
Detailed description of the invention
Hereinafter, embodiment of the present disclosure is described in detail with reference to the accompanying drawings.
But the disclosure can be implemented in many different forms, and should not be construed as limited to embodiment set forth herein.More properly, provide these embodiments to make the disclosure to be thoroughly with complete, and these embodiments will pass on the scope of the present disclosure fully to those skilled in the art.
In the accompanying drawings, for the sake of clarity, can exaggerate the shape and size of element, identical drawing reference numeral will be used to indicate same or analogous element all the time.
Fig. 1 is the sectional view of the sensor package schematically shown according to exemplary embodiment of the present disclosure, and Fig. 2 is the decomposition diagram of the sensor package shown in Fig. 1.
It can be the acceleration transducer packaging part that can utilize MEMS (MEMS) manufacture technics according to the sensor package 100 of this exemplary embodiment.Therefore, sensor package 100 can be formed based on the semiconductor substrate of such as wafer (wafer).
According to the mass body 11 that the sensor package 100 of this exemplary embodiment can comprise pedestal 10 and be arranged in the inner space 13 of pedestal 10.Mass body 11 and pedestal 10 are connected to each other by least one connecting portion 12.
Mass body 11 can be semiconductor chip or sensor, and connecting portion 12 can have the one end being connected to mass body 11 and the other end being connected to pedestal 10, and connecting portion 12 is used as spring, vibrates pro rata for making mass body 11 and acceleration according to external force.
In addition, the lid 20 and 30 having lid shape can be attached to bottom and the top of pedestal 10, respectively with the inner space 13 of closed base 10.
Lower cover 20 can be attached to the lower surface of pedestal 10, and upper cover 30 can be attached to the upper surface of pedestal 10.Here, when the inner space 13 of pedestal 10 be groove instead of through hole, lower cover 20 can be omitted.
At least one electrode 15 and wiring pattern 17 can be formed on the upper surface of pedestal 10.The side that electrode 15 can be formed in the upper surface of pedestal 10 separates with inner space 13 with being set to largest interval.
Therefore, upper cover 30 can be formed as the remaining upper surface except being formed with the part of electrode 15 covering pedestal 10, is exposed to outside to make electrode 15.
Wiring pattern 17 can form circuit and can be electrically connected to electrode 15 on pedestal 10.The forming position of wiring pattern 17 is not limited to the upper surface of pedestal 10, if needed, wiring pattern 17 can be formed in various position.
Can be formed by mutually the same material according to the pedestal 10 of this exemplary embodiment, upper cover 30 and lower cover 20.Such as, pedestal 10, upper cover 30 and lower cover 20 can be formed by silicon materials.But configuration of the present disclosure is not limited thereto.
In addition, in the present example embodiment, lid 20 and 30 and pedestal 10 are bonded to each other by the combination member 40 formed by polymeric material.
In order to make lid 20 and lid 30 and pedestal 10 be bonded to each other, the combination member 40 that formed by metal can be used or can eutectic bond be carried out, but in this case, heat must be applied to sensor package 100.
But, when using polymeric material, due to technique and described binding operation can be performed at relatively low temperatures, therefore obviously easily manufacture process can be performed.
Meanwhile, when use polymeric material as combination member 40, Problems existing is to be difficult to use wet etching method, but this problem solves according to the method for the sensor package of this exemplary embodiment that will describe below by manufacturing.
Can be any one in (such as) epoxy resin, acrylic resin, polycarboxylated styrene (PHS), silicones and phenol resin according to the combination member 40 of this exemplary embodiment.This polymeric material but the disclosure is not limited thereto, but various polymeric material can be used, as long as can make base 10 and upper cover 30 easily combine each other.
In addition, inclined surface can be formed as according to first side surface 35 being set to adjacent with electrode 15 of this exemplary embodiment upper cover 30.In addition, the first side surface 35 of upper cover 30 can to downward-extension, with closer to electrode 15.
More particularly, the first side surface 35 of upper cover 30 comprises: the first inclined surface 35a, is formed as vertical with the upper surface of upper cover 30; Second inclined surface 35b, from the lower end of the first inclined surface 35a towards electrode 15 to downward-extension.
This shape is by shape that the Transformatin of a part for upper cover 30 is formed in the manufacture process of sensor package 100, to make the electrode 15 be formed on pedestal 10 be exposed to outside, by the manufacture process of the clearer description sensor package 100 of the method for the manufacture sensor package that will be described below.
Simultaneously, as shown in fig. 1, because the first side surface 35 of upper cover 30 comprises inclined surface as above, so ozzle P (capillary (capillary)) the movable minimum space of wirebonding device in wire bonding process can be guaranteed on electrode 15.
As mentioned above, the overall dimensions according to the sensor package 100 of this exemplary embodiment can significantly reduce, and guarantees the space for wire bond technique simultaneously.
Structure described above send the signal of telecommunication according to the sensor package 100 of this exemplary embodiment by electrode 15, the described signal of telecommunication depends on the change of the resistance value produced when mass body 11 vibrates pro rata with the acceleration of external force, and the size of the acceleration corresponding with external force can be detected based on the described signal of telecommunication at outside (such as, signal processing apparatus).
Then, will the method manufactured according to the sensor package 100 of this exemplary embodiment be described.
Fig. 3 to Fig. 8 is for describing the view manufactured according to the method for the sensor package of this exemplary embodiment.
Manufacture and can use semiconductor technology (such as, MEMS technology) according to the method for the sensor package of this exemplary embodiment.Therefore, multiple sensor package can be manufactured under wafer state simultaneously, form single-sensor packaging part by cut crystal after completing in manufacturing process.
First, with reference to Fig. 3, pedestal 10 in space 13 can be provided at its inner portion by preparation quality body 11.In this case, mass body 11 is connected to pedestal 10 by connecting portion (12 in Fig. 2), and electrode 15 and wiring pattern (17 in Fig. 2) can be formed on a surface of pedestal 10.
Electrode 15 can form a line in the position separating preset distance with the inner space 13 be formed in pedestal 10.
By preparing the semiconductor substrate 101 (hereinafter referred to as wafer) of such as wafer and partly etching the inside of this wafer and form inner space 13, mass body 11, connecting portion 12 etc. in pedestal 10 as above.
Meanwhile, multiple pedestal 10 can be formed on single wafer 101.Therefore, as shown in Figure 3, single wafer 101 can divide pedestal 10 by each independently region A, and repeat to arrange on single wafer 101.
In this case, two pedestals 10 being set to adjacent one another are can be formed according to mode facing with each other.Such as, two pedestals 10 arranged continuously on wafer 101 can be formed according to the mode based on the mutual horizontal symmetrical of line of cut C.
Here, line of cut C can to refer in cutting technique (will be described below) along its cut crystal with the line separated by each sensor package 100.
Subsequently, as shown in Figure 4, lower cover 20 can be attached to the bottom of pedestal 10.Be similar to pedestal 10, lower cover 20 can be prepared under wafer 201 state and lower cover 20 is attached to the bottom of the wafer 101 that pedestal 10 is formed thereon.
In this case, the groove 22 that can expand the inner space 13 of pedestal 10 can be formed in the wafer 201 of lower cover 20.Groove 22 is formed by etching technics.
Pedestal 10 and lower cover 20 are bonded to each other by the combination member 40 formed by polymeric material.
Then, as shown in Figure 5, upper cover 30 can adhere to pedestal 10.Be similar to pedestal 10, also can prepare upper cover 30 under wafer 301 state, and upper cover 30 is attached to the top of submount wafer 101.
Therefore, when completing the stacking technique of wafer, upper cover wafer 301 and lower cover wafer 201 can be prepared and be stacked on multi-layer crystal chip on the upper and lower of submount wafer 101 respectively.
Meanwhile, can extension base 10 inner space 13 groove 32 also by etching be formed in upper cover wafer 301.
Submount wafer 101 and upper cover wafer 301 are bonded to each other by the combination member 40 formed by polymeric material.
Polymeric material is patterned by semiconductor technology (such as, exposure technology).Therefore, easily form combination member 40 by semiconductor technology, and combination member 40 can be formed as having accurate size and accurate shape.
In addition, due to the combination member 40 of optimised quantity can be adopted, therefore can be reduced in combination member 40 in basic cohesive process significantly and be pushed through the situation of side too much.
On the contrary, utilizing metal as combination member or when utilizing eutectic bond technique, being difficult to utilize semiconductor technology to carry out patterning.Therefore, when utilizing metal as combination member or when utilizing eutectic bond technique, can be difficult to the width accurately controlling or formed accurately combination member, the region it being applied with combination member is expanded, and this can increase the width of combination member.
When the applying region of combination member is increased as mentioned above, the size of sensor package also needs to increase, and result, adds manufacturing cost, limits miniaturization.
In addition, combination member 40 is formed by polymeric material in such as this exemplary embodiment, cohesive process can be performed at relatively low temperatures.Usually, polymer is 200 DEG C or lower in conjunction with temperature.On the contrary, when utilize metal bonding members combined process or in eutectic bond technique, treatment temperature can be at least 300 DEG C or higher, usually above 400 DEG C.
Therefore, according to the method manufacturing sensor package, the thermal shock being applied to sensor package in cohesive process can reduce significantly.
In addition, effect stress is on polymer less than the stress acted on metal.Therefore, be exposed to the stress produced in the manufacture process in hot environment and low temperature environment repeatedly can be little, when the thermal coefficient of expansion of pedestal 10 and lid 20 and 30 is different from each other, combination member can be used as the buffer component between pedestal 10 and lid 20 and 30.
In addition, when the wafer 301 forming upper cover 30 is attached to form pedestal 10 wafer 101, cut or impurity may be produced between wafer 101 and 301.In addition, when to carry out in this state wafer in conjunction with, when relative hour of the thickness of combination member 40, part around impurity may be separated, thus described combination can not be performed aptly at many chip areas, when performing ensuing cutting process, the possibility that significant deficiency occurs can be increased.
Therefore, when utilize in conjunction with the corrupt split of thickness relative thin or eutectic bond technique, wafer is bonded to each other time, defect generation rate can be increased due to the pollution of mating surface.But, when using polymer in such as this exemplary embodiment, can relatively thick (levels at tens μm) in conjunction with thickness.Therefore, even if when there is cut or impurity, also can guarantee bond strength and no matter cut or impurity, thus defect incidence can be reduced significantly.
In addition, in corrupt split or eutectic bond process, mating surface needs evenly, to guarantee bond strength.Therefore, as shown in Figure 2, when combination member 40 is incorporated into wiring pattern 17, the flatening process performing mating surface is needed.
But, when using polymeric material, even if wiring pattern 17 is when mating surface is formed bending, owing to being filled with polymeric material along curved surface, therefore above-mentioned flatening process can be omitted.
In addition, when using metal to form combination member, when combination member contacts with wiring pattern 17, owing to being short-circuited, therefore need to form insulating barrier in addition on wiring pattern 17.In addition, when combination member contacts with electrode 15, owing to being short-circuited, therefore need to guarantee the insulation distance between electrode 15 and combination member 40.
Therefore, can complicate fabrication process be made, and also can increase the size of sensor package.
But, due to according to the combination member 40 of this exemplary embodiment by polymeric material (namely, insulating materials) formed, therefore can keep insulation by combination member 40 itself, and also can reduce the spacing distance between combination member 40 and electrode 15 significantly.
Next, a part for upper cover 30 can be removed.Perform this technique, be exposed to outside to make the electrode 15 being arranged on upper cover 30 bottom.In the process, wet etching and dry etching can sequentially be performed.
First, as shown in Figure 6, mask layer 50 can be formed.Form mask layer 50 to prevent from appropriate section occurring in etching process by unnecessary etching and removal.Therefore, any material can be used to form mask layer 50, the solubilize as long as this material can not be etched.
In addition, can be formed on two surfaces of multi-layer crystal chip according to the mask layer 50 of exemplary embodiment of the present disclosure.That is, mask layer 50 can be respectively formed on the lower surface of the upper and lower lid wafer 201 of upper surface of upper cover wafer 301.
In addition, because electrode 15 is exposed to outside by etching by needs, the mask layer 50 be therefore formed in upper cover wafer 301 can be formed on the remainder outside the part (following, etched portions) corresponding with electrode 15.
Meanwhile, if by only upper cover 30 part of multi-layer crystal chip being immersed etching solution or by utilizing other fixture etc. to prevent etching solution from etching the lower surface of multi-layer crystal chip, then can saving the mask layer 50 on the lower surface being formed in lower cover wafer 201.
In addition, mask layer 50 can be pre-formed before upper cover wafer 301 or lower cover wafer 201 are attached to submount wafer 101.In this case, mask layer 50 can be formed while preparation upper cover wafer 301 or lower cover wafer 201.
Subsequently, as shown in Figure 7, first etching is performed by wet etching method.First etching is performed by the method immersed by multi-layer crystal chip in etching solution.
As mentioned above, formed by polymeric material according to the combination member 40 of this exemplary embodiment.The solution used in wet etching method (such as, tetramethyl ammonium hydroxide (TMAH) etc.) there is the attribute easily making polymeric material dissolve, when contacting with etching solution according to the combination member 40 of this exemplary embodiment, can easily dissolve combination member 40.
Therefore, in first etching, need to control etch period, combination member 40 is not contacted with etching solution.Such as, as shown in Figure 7, the time that upper cover 30 is not completely removed is set, and performs wet etching method within the corresponding time.
Need to perform (as mentioned above) in the scope that combination member 40 does not contact with etching solution owing to etching for the first time, therefore electrode 15 can not be made to be exposed to outside by means of only first etching.But, owing to using wet etching, the thickness of the etch areas of upper cover wafer 301 therefore effectively can be reduced.
By wet etching, the etching groove 37 with trapezoid cross section can be formed in upper cover wafer 301.Etching groove 37 can form elongated shape with being arranged in upper cover wafer 301 Linear along single-sensor packaging part 100, or multiple etching groove can be separated from each other according to predetermined space and be formed parallel to each other.
Next, as shown in Figure 8, can perform and utilize the secondarily etched of dry etching method.
Can perform secondarily etched in etch areas, and the remainder in first etching on electrode 15 can be removed.
Because mask layer 50 has been formed on the upper surface of upper cover 30, therefore only can expose necessary part (such as, etch areas), make in secondarily etched, can directly perform dry etching and without the need to other mask process.Such as, for dry etching, plasma etching etc. can be used.
When performing dry etching, the electrode 15 be formed on the upper surface of pedestal 10 can be exposed to outside completely.In addition, the sidewall of the etching groove 37 formed during wet-etching technology performs this etching, formed (as shown in Figure 8) by multiple inclined surface to make the sidewall of etching groove 37 (or first side surface of upper cover).
More particularly, first side surface 35 being set to adjacent with electrode 15 of upper cover 30 comprises: the first inclined surface 35a, is formed as the upper surface being approximately perpendicular to upper cover 30; Second inclined surface 35b, the surface tilted towards electrode 15 by the lower end from the first inclined surface 35a is formed.
As mentioned above, the first side surface 35 of upper cover 30 can extend also upwards to be formed with the isolated mode of electrode 15 closer to electrode 15 according to the first side surface 35 towards pedestal 10.Therefore, as shown in fig. 1, the movable minimum space of ozzle P of wirebond arrangement in wire bond process can be guaranteed around electrode 15.
Next, after removal mask layer (50 of Fig. 7), described multi-layer crystal chip can be cut along line of cut C.Therefore, described multi-layer crystal chip can be divided into single packaging part, can complete as shown in Figure 1 according to the sensor package 100 of this exemplary embodiment.
As mentioned above, according in the sensor package of exemplary embodiment of the present disclosure and the method for this sensor package of manufacture, because polymeric material is used as the combination member between wafer, therefore combined process can be performed at low temperatures.Therefore, the thermal shock being applied to sensor package in the fabrication process can be reduced significantly.
In addition, can prevent from being short-circuited between wiring pattern by combination member, and the overall dimensions of packaging part can be reduced significantly.
Although illustrate and describe exemplary embodiment above, being apparent that for those skilled in the art, when not departing from the scope of the present invention be defined by the claims, can modifying and change.
Claims (19)
1. a sensor package, comprising:
Pedestal, comprises the mass body be arranged in the inner space being formed in described pedestal, and has the surface that at least one electrode is formed thereon;
Upper cover, is attached to the described surface of described pedestal, to close the described space being provided with mass body;
Combination member, is formed by polymeric material and described pedestal and described upper cover is bonded to each other.
2. sensor package as claimed in claim 1, wherein, described upper cover is attached to described pedestal, makes electrode be exposed to outside, and first side surface adjacent with electrode of upper cover comprises multiple inclined surfaces with differing tilt angles.
3. sensor package as claimed in claim 2, wherein, the first side surface of described upper cover to downward-extension, more to close on described electrode.
4. sensor package as claimed in claim 2, wherein, the first side surface of described upper cover comprises: the first inclined surface, is formed as vertical with the upper surface of upper cover; Second inclined surface, from the lower end of described first inclined surface towards electrode to downward-extension.
5. sensor package as claimed in claim 1, wherein, described pedestal has the wiring pattern be formed on the described surface of described pedestal, and described combination member is attached on described wiring pattern.
6. sensor package as claimed in claim 1, wherein, described combination member is formed by any one in epoxy resin, acrylic resin, polycarboxylated styrene (PHS), silicones and phenol resin.
7. sensor package as claimed in claim 1, wherein, described pedestal and described upper cover are formed by semiconductor substrate.
8. a sensor package, comprising:
Pedestal, comprises the mass body be arranged in the inner space being formed in described pedestal, and has the surface that at least one electrode and wiring pattern be formed thereon;
Upper cover, is attached to the described surface of described pedestal, to close the space being provided with mass body;
Combination member, described pedestal and described upper cover are bonded to each other and make described pedestal and described upper cover insulated from each other.
9. manufacture a method for sensor package, described method comprises:
Prepare pedestal, described pedestal comprises the mass body be arranged in the inner space being formed in described pedestal, and has the surface that at least one electrode and wiring pattern be formed thereon;
Polymeric material is utilized to form combination member in semiconductor processing on the described surface of described pedestal;
Upper cover is attached to described combination member.
10. method as claimed in claim 9, described method also comprises: partly remove described upper cover, so that electrode is exposed to outside.
11. methods as claimed in claim 10, wherein, comprise the step that electrode exposes:
All the other regions except being formed in the etch areas on electrode of the upper surface of upper cover form mask layer;
Remove described etch areas.
12. methods as claimed in claim 11, wherein, the step removing etch areas comprises:
Wet etching method is utilized to etch described etch areas for the first time, partly to remove described etch areas;
Utilize the secondarily etched remaining etch areas of dry etching method, to remove remaining etch areas.
13. methods as claimed in claim 12, wherein, described first etching removes described etch areas in the scope that electrode is not exposed.
14. methods as claimed in claim 9, wherein, the step preparing pedestal is the wafer that preparation defines multiple pedestal, and the step in conjunction with upper cover is that the wafer defining multiple upper cover is attached to the wafer defining pedestal.
15. methods as claimed in claim 14, wherein, two pedestals arranged on the wafer are set to relative to each other flatly symmetrical continuously.
16. methods as claimed in claim 14, described method also comprises: after in conjunction with upper cover:
Electrode is exposed to outside;
Cut crystal.
17. methods as claimed in claim 9, wherein, by sensor package described in MEMS (MEMS) manufacture technics.
18. methods as claimed in claim 9, wherein, perform the step of described formation combination member and the step in conjunction with upper cover under 200 DEG C or lower temperature.
19. 1 kinds of methods manufacturing sensor package, described method comprises:
Prepare pedestal, described pedestal comprises the mass body that is arranged in the inner space being formed in described pedestal and has the surface that at least one electrode and wiring pattern be formed thereon;
Upper cover is attached to the described surface of described pedestal;
The etch areas of upper cover is partly etched by wet etching method;
The remainder of described etch areas is etched, so that electrode is exposed to outside by dry etching method.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140074747A KR20150145413A (en) | 2014-06-19 | 2014-06-19 | Sensor package and manufacturing method thereof |
| KR10-2014-0074747 | 2014-06-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105293426A true CN105293426A (en) | 2016-02-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510106739.5A Pending CN105293426A (en) | 2014-06-19 | 2015-03-11 | Sensor package and method of manufacturing the same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20150145413A (en) |
| CN (1) | CN105293426A (en) |
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| JP2001337105A (en) | 2000-05-26 | 2001-12-07 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor |
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| TW200618095A (en) * | 2004-10-27 | 2006-06-01 | Hewlett Packard Development Co | Method of singulating electronic devices |
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| CN1792764A (en) * | 2005-10-27 | 2006-06-28 | 中国科学院上海微系统与信息技术研究所 | Disc grade packing tech. for micro mechanical acceleration counter |
| DE102009045541A1 (en) * | 2009-10-09 | 2011-04-14 | Robert Bosch Gmbh | Method for manufacturing micromechanical device, involves arranging micro-electro-mechanical system structures and bond contact surfaces respectively in rows on micro-electro-mechanical system-wafer |
| CN102079502A (en) * | 2010-12-03 | 2011-06-01 | 华东光电集成器件研究所 | MEMS (micro electro mechanical system) device and wafer-level vacuum packaging method thereof |
| CN102795593A (en) * | 2012-08-29 | 2012-11-28 | 深迪半导体(上海)有限公司 | Method for processing ultrathin vacuum-sealed MEMS (Micro-electromechanical System) wafer |
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