CN105280741A - 一种太阳能电池组件焊带 - Google Patents
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- 238000003466 welding Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910021389 graphene Inorganic materials 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 4
- 229910001074 Lay pewter Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 abstract description 3
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 23
- 238000002834 transmittance Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 206010023126 Jaundice Diseases 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
本发明公开了一种太阳能电池组件焊带，属于太阳能组件技术领域，包括基板，在所述基板上依次设置导电层、焊层，其特征在于：所述导电层为的石墨烯层。它解决现有技术中太阳能组件焊带材料成本高、存在环境污染隐患的技术问题。本发明具有成本低、环境友好、导电率高等优点。
Description
技术领域
本发明涉及一种焊接材料，尤其涉及一种太阳能电池组件焊带，属于太阳能组件技术领域。
背景技术
焊带是光伏组件焊接过程中的重要原材料，太阳能组件通过焊带连接太阳能电池片，由于焊带良好的导电性，使得各太阳能电池片在焊接后形成一个完成的电气通路，从而使得太阳光纤的照射下产生的电流和电压能够在焊带中传输出来，为利用太阳能提供了可靠的基础。因此，焊带质量的好坏直接影响到光伏组件的收集效率，对光伏组件的功率影响很大。
现有的太阳能组件焊带结构包括三部分，中间是铜带，上下两层是锡合金或者银层。但是，在实际使用中，铜带及锡合金或银层造价成本高，而且现有的锡合金大部分都是锡铅合金，合金内含有重金属，使得在生产过程中具有较大的污染，对人体健康及自然环境造成潜在危害；同时，对太阳能电池组件的国外出口存在重大隐患，尤其是欧洲的RoHS认证。
石墨烯具有良好的力学、电学和热学性质：石墨烯是有史以来最结实的材料，其强度是钢的100多倍；电子传导率最快的材料，比硅材料快140倍；它还是最轻的固体物质、室温下导电性能最好的材料、具有97.7%的透光率。因其电阻率极低，电子迁移的速度极快，因此被期待可用来发展更薄、导电速度更快的新一代电子元件。在石墨烯中，电子能够极为高效地迁移，而传统的半导体和导体，例如硅和铜远没有石墨烯表现得好。由于电子和原子的碰撞，传统的半导体和导体用热的形式释放了一些能量，在一般的电子元器件中以这种方式浪费了72%-81%的电能，石墨烯则不同，它的电子能量不会被损耗，这使它具有了非比寻常的优良特性。因此，将石墨烯复合在焊带表面具有巨大的应用前景。
发明内容
本发明针对现有技术中太阳能组件焊带材料成本高、存在环境污染隐患的技术问题，提供一种太阳能组件焊带，降低生产成本、对环境友好且提高导电率。
为此，本发明采用如下技术方案：
一种太阳能电池组件焊带，包括基板，在所述基板上依次设置导电层、焊层，其特征在于：所述导电层为石墨烯层。
优选的，所述基板材料为PET或铜或硅。
优选的，所述基板的厚度范围为100微米到300微米。
优选的，所述导电层的厚度为1~60纳米。
优选的，所述焊层为无铅锡合金或锡铅合金。
优选的，所述焊层厚度15~30微米。
本发明具有如下有益效果：
1、取代了传统铜带表面镀锡的焊带，减轻焊带质量，大大降低了生产成本，减小了重金属铅的危害，是一种环境友好型焊带。
2、石墨烯具有比铜与银更高的导电率，大大增加了光伏焊带的导电效率，减少了电能的损耗，进而提高光伏组件的光电转换效率。
附图说明
图1为本发明的结构示意图；
图中，1为基材，2为导电层，3为焊层。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案，下面结合具体实施例对本发明的技术方案进行清楚、完整的描述，本发明中与现有技术相同的部分将参考现有技术。
如图1所示，本发明的太阳能电池组件焊带，包括基板1，在所述基板1上依次设置导电层2、焊层3，其中，所述基板1的材料为PTE，厚度范围为100微米到300微米，包括端点值；导电层2为一层石墨烯，厚度为1~60纳米，包括端点值；焊层3为无铅锡合金，厚度15~30微米，包括端点值。
以PET材料为基板的焊带透光率好。当然，在其他实施例中，基板1也可以采用铝或铝合金材料、硅材料、或者铜材料。
石墨烯的层数关系到焊带的导电率、透光率，层数越少其导电性能越佳，单层石墨烯导电率最高；同时，层数越少石墨烯的透光率越大，单层石墨烯透光率最大，能达到97%以上。但是，采用多层石墨烯也能实现本发明的技术方案。
焊层3采用无铅锡合金，焊层3的厚度范围是15μm~30μm，这使得本发明的焊带与太阳能电池片上的银栅能够更好的结合到一起，本发明焊带的电池片拉脱力测试结果：平均拉脱力为5N；传统的焊带（如铜上直接上锡，无石墨烯导电层）在电池片上的平均拉脱力为3N。
另外，本发明的焊带的其他性能测试结果：现有技术焊带成品电阻率＜2.3×10-8Ω·m；而本发明焊带的电阻率＜1×10-8Ω·m；现有技术焊带成品断裂强度：≥150Mpa；本实施例焊带断裂强度：≈130GPa。
同时，由于本发明焊带的导电层2中并不含有其他杂质元素，对焊带进行可靠性测试后，并不会产生发黄等不良现象，完全满足工程需求。
本发明利用石墨烯层超高的导电率，减少过程电流损失，进而提高了光电转换效率。
为便于说明，表示器件结构的剖面图会不依一般比例局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。
上面阐述了很多具体细节以便于充分理解本发明，但本发明采用其他不同与在此描述的其他方式来实施，基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
Claims (6)
1.一种太阳能电池组件焊带，包括基板，在所述基板上依次设置导电层、焊层，其特征在于：所述导电层为石墨烯层。
2.根据权利要求1所述的太阳能电池组件焊带，其特征在于：所述基板材料为PET或铜或硅。
3.根据权利要求1所述的太阳能电池组件焊带，其特征在于：所述基板的厚度范围为100微米到300微米。
4.根据权利要求1所述的太阳能电池组件焊带，其特征在于：所述导电层的厚度为1~60纳米。
5.根据权利要求1所述的太阳能电池组件焊带，其特征在于：所述焊层为无铅锡合金或锡铅合金。
6.根据权利要求1所述的太阳能电池组件焊带，其特征在于：所述焊层厚度15~30微米。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409952A (zh) * | 2016-11-03 | 2017-02-15 | 海宁市乔斯特新能源有限公司 | 一种具有石墨烯的太阳能电池焊带 |
| CN108258076A (zh) * | 2018-02-12 | 2018-07-06 | 无锡嘉瑞光伏有限公司 | 一种采用异形焊带的太阳能电池组件 |
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| WO2011101788A1 (en) * | 2010-02-17 | 2011-08-25 | Basf Se | Process for producing electrically conductive bonds between solar cells |
| CN103212924A (zh) * | 2013-04-11 | 2013-07-24 | 西安交通大学 | 一种电子封装用的石墨烯包覆铜焊丝及其制备方法 |
| CN204424291U (zh) * | 2015-03-19 | 2015-06-24 | 成都格莱飞科技股份有限公司 | 低成本复合太阳能电池光伏焊带装置 |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011101788A1 (en) * | 2010-02-17 | 2011-08-25 | Basf Se | Process for producing electrically conductive bonds between solar cells |
| CN103212924A (zh) * | 2013-04-11 | 2013-07-24 | 西安交通大学 | 一种电子封装用的石墨烯包覆铜焊丝及其制备方法 |
| CN204424291U (zh) * | 2015-03-19 | 2015-06-24 | 成都格莱飞科技股份有限公司 | 低成本复合太阳能电池光伏焊带装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409952A (zh) * | 2016-11-03 | 2017-02-15 | 海宁市乔斯特新能源有限公司 | 一种具有石墨烯的太阳能电池焊带 |
| CN108258076A (zh) * | 2018-02-12 | 2018-07-06 | 无锡嘉瑞光伏有限公司 | 一种采用异形焊带的太阳能电池组件 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: trina solar Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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