CN105280605A - Integrated transformer - Google Patents
Integrated transformer Download PDFInfo
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- CN105280605A CN105280605A CN201410355224.4A CN201410355224A CN105280605A CN 105280605 A CN105280605 A CN 105280605A CN 201410355224 A CN201410355224 A CN 201410355224A CN 105280605 A CN105280605 A CN 105280605A
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Abstract
An integrated transformer comprises a first inductor and a second inductor, the first inductor comprises B circles of spiral wirings formed by a first metal layer and A circles of wirings formed by a second metal layer, and the A circles of the wirings formed by the second metal layer is overlapped with the innermost A circles of the wirings of the B circles of the spiral wirings formed by the first metal layer; and the second inductor comprises C circles of wirings formed by at least the second metal layer, the C circles of the wirings, formed by the second metal layer, of the second inductor are substantially overlapped with the partial wirings formed by the first metal layer, A is less than B, and A is less than C.
Description
Technical field
The present invention relates to integrated transformer, espespecially a kind of asymmetrical integrated transformer.
Background technology
Transformer (transformer) and balance/unbalanced transformer (balun) realize the single-ended critical elements to functions such as differential wave conversion, signal coupling, impedance matchings for being used in radio frequency integrated circuit, along with integrated circuit is to system level chip (SystemonChip, SoC) develop, integrated transformer (integratedtransformer/balun) replaces traditional separate elements gradually, and is widely used in radio frequency integrated circuit.But, passive device in integrated circuit, such as inductance and transformer, often consume a large amount of chip areas, therefore, how the quantity of passive device in integrated circuit to be simplified and by the area minimization of passive device, and optimize element characteristic, such as quality factor (qualityfactor, Q) and coupling coefficient (couplingcoefficient simultaneously, K) etc., be an important problem.
Summary of the invention
Therefore, one of object of the present invention is to provide a kind of integrated transformer, its quality factor had and coupling coefficient, and only needs to use very little chip area just can realize, to reduce the manufacturing cost of chip and to optimize its element characteristic.
According to one embodiment of the invention, a kind of integrated transformer includes one first inductance and one second inductance, wherein this first inductance contains the B that is made up of a first metal layer and encloses helical form coiling and the A that is made up of one second metal level encloses coiling, and the A be wherein made up of this second metal level encloses inner most A that coiling and the B that this first metal layer is formed enclose helical form coiling, and to enclose coiling overlapping in fact; This second inductance contains the C be at least made up of this second metal level and encloses coiling, wherein the C be made up of this second metal level circle coiling of this second inductance is overlapping in fact with the part coiling be made up of this first metal layer of this first inductance, wherein A is less than B, and A is less than C.
Accompanying drawing explanation
Figure 1A is the schematic diagram of the first metal layer of the integrated transformer of foundation first embodiment of the invention.
Figure 1B is the schematic diagram of the second metal level of the integrated transformer of foundation first embodiment of the invention.
Fig. 1 C is the schematic diagram of the 3rd metal level of the integrated transformer of foundation first embodiment of the invention.
Fig. 1 D is the top view of the integrated transformer according to first embodiment of the invention.
Fig. 1 E is the generalized section of the integrated transformer according to first embodiment of the invention.
Fig. 2 A is the schematic diagram of the first metal layer of the integrated transformer of foundation second embodiment of the invention.
Fig. 2 B is the schematic diagram of the second metal level of the integrated transformer of foundation second embodiment of the invention.
Fig. 2 C is the 3rd metal level of integrated transformer and the schematic diagram of the 4th metal level of foundation second embodiment of the invention.
Fig. 2 D is the top view of the integrated transformer according to second embodiment of the invention.
Fig. 2 E is the generalized section of the integrated transformer according to second embodiment of the invention.
Fig. 3 is the schematic diagram of the integrated transformer according to another embodiment of the present invention.
Fig. 4 is the schematic diagram of the integrated transformer according to another embodiment of the present invention.
Fig. 5 is the schematic diagram of the integrated transformer according to another embodiment of the present invention.
Fig. 6 is the schematic diagram of the integrated transformer according to another embodiment of the present invention.
Wherein, description of reference numerals is as follows:
110,120,125,130,210,220,225,230 helical form coilings
117,118,126,127,128,129_1,129_2,136,137,138,139_1,139_2,214,217,218,224_1,224_2,226,227,228,229_1,229_2,234_1,234_2,236,237,238,239_1,239_2 through hole
121_1,121_2,221_1,22,1_2 first input endpoint of inductance
122_1,122_2,222_1,22,2_2 second input endpoint of inductance
132,133,232,233,242,243 bridging lines
245,246 centre cap coilings
IND1 first inductance
IND2 second inductance
Embodiment
Please refer to Figure 1A, Figure 1B, Fig. 1 C, Fig. 1 D and Fig. 1 E, wherein Figure 1A, 1B and 1C are the schematic diagram according to the first metal layer of integrated transformer of first embodiment of the invention, the second metal level and the 3rd metal level, Fig. 1 D is the top view of the integrated transformer according to first embodiment of the invention, and Fig. 1 E is the profile of the present embodiment.The integrated transformer of the present embodiment can be applicable to transformer (transformer) in radio frequency chip or balance/unbalanced transformer (balun).
In the present embodiment, integrated transformer is asymmetric integrated transformer (asymmetricintegratedtransformer), the ratio of the inductance value of two inductance is about 9nH:6nH (nano-Henry) and (is only example explanation, the restriction of non-invention), and whole integrated transformer has very little chip area, be about 150um*100um (micro-meter).
In the present embodiment, the first metal layer is the layer (Re-DistributionLayer that reroute, RDL), and this second metal level is a super thick metal level (Ultra-ThickMetal, UTM), and the second metal level is between the first metal layer and the 3rd metal level, but the present invention is not as limit, in other embodiments, the first metal layer and the second metal level can be two adjacent metal levels any in integrated circuit.
Please refer to Figure 1A, Figure 1B and Fig. 1 C, integrated transformer forms one first inductance and one second inductance primarily of the first metal layer, the second metal level and the 3rd metal level, and wherein the first inductance itself is electrically insulated from the second inductance.The schematic diagram of illustrated the first metal layer contains a helical form coiling (spiralwiring) 110 and two through holes 117,118, and helical form coiling 110 has about 8 ~ 9 circles in this embodiment; The schematic diagram of the second metal level contain two input endpoint 121_1,121_2 of the first inductance, two input endpoint 122_1,122_2 of the second inductance, helical form coiling 120,125 and multiple through hole 126,127,128,129_1,129_2; 3rd metal level contain a helical form coiling 130, many articles of bridging lines 132,133 and multiple through hole 136,137,138,139_1,139_2.Through hole in Figure 1A, Figure 1B and Fig. 1 C is used to the different metal level of electric connection two, for example, the through hole 118 of the first metal layer is the through hole 128 being electrically connected to the second metal level, and the through hole 129_1 of the second metal level is the through hole 139_1 being electrically connected to the 3rd metal level.
In the present embodiment, the first inductance contains the A circle helical form coiling 120 that the B be made up of the first metal layer encloses helical form coiling 110 and is made up of the second metal level, and in the example shown in Figure 1A, 1B, B is about 8 ~ 9, and A is about 1 ~ 2.Specifically, two input endpoints 121_1,121_2 of first inductance are all at the second metal level, and the helical form coiling 110 be made up of the first metal layer is connected in series by through hole 118,128 with the helical form coiling 120 be made up of the second metal level, to form the first inductance.In addition, the first inductance only contains two groups of through holes 117,127 and 118,128 in the present embodiment.
In addition, in the present embodiment, the second inductance contains the P circle helical form coiling that the C be made up of the second metal level encloses helical form coiling 125 and is made up of the 3rd metal level, and in the example shown in Figure 1B, 1C, C is about 4 ~ 5, and P is about 2.Specifically, two input endpoints 122_1,122_2 of second inductance are all at the second metal level, input endpoint 122_2 is directly connected to helical form coiling 125, the helical form coiling 125 be made up of the second metal level is connected in series by through hole 129_1,139_1 with the helical form coiling 130 be made up of the 3rd metal level, helical form coiling 130 by the bridging line (using the 4th metal level (not illustrating)) between through hole 137,138 to be connected to bridging line 133 and input endpoint 122_1, thus to form the second inductance.
Then refer again to the top view shown in Fig. 1 D, in the first inductance, by the second metal level to form the inner most coiling of the helical form coiling 110 that helical form coiling 120 is formed with by the first metal layer overlapping in fact; And in the second inductance, the helical form coiling 125 be made up of the second metal level is overlapping in fact with the part coiling be made up of the first metal layer of the first inductance, and the innermost circle coiling of the second inductance is in close proximity to the outmost turns coiling of the helical form coiling 120 be made up of this second metal level of the first inductance.
In the A-A ' section shown in Fig. 1 D, 1E, represented by " IND1 " is the first inductance, and be the second inductance represented by " IND2 ", in interior two circles of A-A ' section, first inductance itself can form the structure of spiral stacking (helicalstack), and mutual inductance (mutualinductance) between two inductance that also can form " L " type between the first inductance and the second inductance, therefore, the quality factor (Q value) of integrated transformer can be improved, and improve coupling amount, reduce usable floor area.That is the first inductance and the mutual inductance of the second inductance comprise in-plant vertical coupledly, oblique to be coupled and level is coupled simultaneously; In other words the first inductance and the second inductance vertical coupledly, oblique to be coupled and level is coupled the mutual inductance that formed each other by in-plant.
In the integrated transformer described in above embodiment, because the first inductance and the second inductance itself all employ the helical form coiling that two different metal layers contact, therefore, the first inductance and the second inductance can be made under minimum chip area to have maximum inductance value, in addition, the integrated transformer of the present embodiment also has good performance in quality factor and coupling amount, therefore can reduce the manufacturing cost of chip and optimize its element characteristic.
The partial design of the integrated transformer that Figure 1A ~ 1E illustrates is only an example explanation, and not as restriction of the present invention, specifically, illustrated helical form coiling 120,130 can not necessarily helical form coiling, and the number of turns of the first inductance and the second inductance also can change according to the demand of reality to some extent.In addition, the helical form coiling 130 in Fig. 1 C is mainly used to provide the extra inductance value of the second inductance and coupling amount, and in another embodiment of the invention, the helical form coiling 130 in Fig. 1 C can remove in integrated transformer.
Should be noted, although in the embodiment shown in Figure 1A ~ Fig. 1 E, first inductance and the second inductance itself do not comprise any parallel-connection structure, but, sometimes in order to other are considered, such as oil recovery enhancement factor, or when still having other spendable spaces in integrated circuit, other one or more metal levels can also be used to form stacked structure in addition, such as use the 3rd metal level or other metal level forms multiple section to do in parallel with the part coiling in the first inductance or the second inductance, change in these designs all should be under the jurisdiction of category of the present invention.
Please refer to Fig. 2 A, Fig. 2 B, Fig. 2 C, Fig. 2 D and Fig. 2 E, wherein Fig. 2 A, 2B and 2C is the schematic diagram according to the first metal layer of integrated transformer of second embodiment of the invention, the second metal level, the 3rd metal level and the 4th metal level, Fig. 2 D is the top view of the integrated transformer according to second embodiment of the invention, and Fig. 2 E is the profile of the present embodiment.The integrated transformer of the present embodiment can be applicable to transformer in radio frequency chip or balance/unbalanced transformer.
In the present embodiment, integrated transformer is asymmetric integrated transformer, and the ratio of the inductance value of two inductance is about 9nH:6nH (being only example to illustrate, the restriction of non-invention), and whole integrated transformer has very little chip area, is about 150um*100um.
In the present embodiment, the first metal layer is the layer (RDL) that reroutes, and this second metal level is a super thick metal level (UTM), and be from top to bottom sequentially the first metal layer, the second metal level, the 3rd metal level and the 4th metal level, but the present invention is not as limit, in other embodiments, the first metal layer and the second metal level can be two adjacent metal levels any in integrated circuit.
Please refer to Fig. 2 A, Fig. 2 B and Fig. 2 C, integrated transformer forms one first inductance and one second inductance primarily of the first metal layer, the second metal level, the 3rd metal level and the 4th metal level, and wherein the first inductance itself is electrically insulated from the second inductance.The schematic diagram of illustrated the first metal layer contains a helical form coiling (spiralwiring) 210 and two through holes 217,218, and helical form coiling 210 has about 8 ~ 9 circles in this embodiment; The schematic diagram of the second metal level contain two input endpoint 221_1,221_2 of the first inductance, two input endpoint 222_1,222_2 of the second inductance, helical form coiling 220,225 and multiple through hole 224_1,224_2,226,227,228,229_1,229_2; 3rd metal level contain a helical form coiling 230, many articles of bridging lines 232,233 and multiple through hole 234_1,234_2,236,237,238,239_1,239_2; 4th metal level contains many articles of bridging lines 242,243 and two articles of centre caps (centertap) coiling 245,246.Through hole in Fig. 2 A, Fig. 2 B and Fig. 2 C is used to the different metal level of electric connection two, for example, the through hole 218 of the first metal layer is the through hole 228 being electrically connected to the second metal level, and the through hole 229_1 of the second metal level is the through hole 239_1 being electrically connected to the 3rd metal level.
In the present embodiment, the first inductance contains the A circle helical form coiling 220 that the B be made up of the first metal layer encloses helical form coiling 210 and is made up of the second metal level, and in the example shown in Fig. 2 A, 2B, B is about 8 ~ 9, and A is about 1 ~ 2.Specifically, two input endpoints 221_1,221_2 of first inductance are all at the second metal level, and the helical form coiling 210 be made up of the first metal layer is connected in series by through hole 218,228 with the helical form coiling 220 be made up of the second metal level, to form the first inductance.
In addition, in the present embodiment, the second inductance contains the P circle helical form coiling that the C be made up of the second metal level encloses helical form coiling 225 and is made up of the 3rd metal level, and in the example shown in Fig. 2 B, 2C, C is about 4 ~ 5, and P is about 2.Specifically, two input endpoints 222_1,222_2 of second inductance are all at the second metal level, input endpoint 222_2 is directly connected to helical form coiling 225, the helical form coiling 225 be made up of the second metal level is connected in series by through hole 229_1,239_1 with the helical form coiling 230 be made up of the 3rd metal level, helical form coiling 230 by the bridging line 243 between through hole 237,238 to be connected to bridging line 233 and input endpoint 222_1, thus to form the second inductance.
Centre cap coiling 245 is the coiling central points being connected to the first inductance by through hole 234_1,224_1,214, and centre cap coiling 245 is used for being connected to a fixed voltage, such as supply voltage or earthed voltage, maintain this fixed voltage to make the coiling central point of the first inductance; In addition, centre cap coiling 246 is the coiling central points being connected to the second inductance by through hole 234_2,224_2, and centre cap coiling 246 is also used for being connected to a fixed voltage, such as supply voltage or earthed voltage, maintain this fixed voltage to make the coiling central point of the second inductance.
Then refer again to the top view shown in Fig. 2 D, in the first inductance, by the second metal level to form the inner most coiling of the helical form coiling 210 that helical form coiling 220 is formed with by the first metal layer overlapping in fact; And in the second inductance, the helical form coiling 225 be made up of the second metal level is overlapping in fact with the part coiling be made up of the first metal layer of the first inductance, and the innermost circle coiling of the second inductance is in close proximity to the outmost turns coiling of the helical form coiling 220 be made up of this second metal level of the first inductance.
In the A-A ' section shown in Fig. 2 D, 2E, represented by " IND1 " is the first inductance, and be the second inductance represented by " IND2 ", in interior two circles of A-A ' section, first inductance itself can form the structure of spiral stacking (helicalstack), and mutual inductance (mutualinductance) between two inductance that also can form " L " type between the first inductance and the second inductance, therefore, the quality factor (Q value) of integrated transformer can be improved, and improve coupling amount, reduce usable floor area.That is the first inductance and the mutual inductance of the second inductance comprise in-plant vertical coupledly, oblique to be coupled and level is coupled simultaneously; In other words the first inductance and the second inductance vertical coupledly, oblique to be coupled and level is coupled the mutual inductance that formed each other by in-plant.
In the integrated transformer described in above embodiment, because the first inductance and the second inductance itself all employ the helical form coiling that two different metal layers contact, therefore, the first inductance and the second inductance can be made under minimum chip area to have maximum inductance value, in addition, the integrated transformer of the present embodiment also has good performance in quality factor and coupling amount, therefore can reduce the manufacturing cost of chip and optimize its element characteristic.
The partial design of the integrated transformer that Fig. 2 A ~ 2E illustrates is only an example explanation, and not as restriction of the present invention, specifically, illustrated helical form coiling 220,230 can not necessarily helical form coiling, and the number of turns of the first inductance and the second inductance also can change according to the demand of reality to some extent.In addition, the helical form coiling 230 in Fig. 2 C is mainly used to provide the extra inductance value of the second inductance and coupling amount, and in another embodiment of the invention, the helical form coiling 230 in Fig. 2 C can remove in integrated transformer.
Should be noted, although in the embodiment shown in Fig. 2 A ~ Fig. 2 E, first inductance and the second inductance itself do not comprise any parallel-connection structure, but, sometimes in order to other are considered, such as oil recovery enhancement factor, or when still having other spendable spaces in integrated circuit, other one or more metal levels can also be used to form stacked structure in addition, such as use the 3rd metal level or other metal level forms multiple section to do in parallel with the part coiling in the first inductance or the second inductance, change in these designs all should be under the jurisdiction of category of the present invention.
In addition, in the embodiment of Figure 1A ~ 1D, 2A ~ 2D, the shape of inductance coiling is square, but, in other embodiments of the invention, the shape of inductance coiling can be the shape that hexagon, octangle etc. are different, or can be circular, and the change in these designs all should be under the jurisdiction of category of the present invention.
Please refer to Fig. 3 ~ Fig. 6, it depicts the schematic diagram of other embodiments of integrated transformer of the present invention.Specifically, in the embodiment shown in fig. 3, that two helical layer stacked structures of the first inductance of inner ring in Fig. 1 E, Fig. 2 E are revised as three helical layer stacked structures, that is first inductance separately contain the coiling be made up of the 3rd metal level, and the helical form coiling 110,120 in this coiling and Figure 1A ~ 1E is connected in series; In the embodiment shown in fig. 4, except two helical layer stacked structures of the first inductance by inner ring in Fig. 1 E, Fig. 2 E are revised as three helical layer stacked structures, second inductance also can have two helical layer stacked structures (using the second metal level and the 3rd metal level), that is second inductance separately contain the C that is made up of the 3rd metal level and enclose helical form coiling, and the C be made up of the second metal level of the second inductance encloses coiling and the C be made up of the 3rd metal level, and to enclose helical form coiling overlapping in fact; In the embodiment shown in fig. 5, be the spiral stacked structure (using the first metal layer and the second metal level) of adding second inductance in the outmost turns of integrated transformer in addition; In the embodiment shown in fig. 6, be use the first metal layer in addition to make a coiling to be connected to the second inductance in the outmost turns of integrated transformer.How specifically implement the embodiment shown in Fig. 3 ~ Fig. 6 because those skilled in the art should be able to recognize after the embodiment of reading Figure 1A ~ 1E, 2A ~ 2E, therefore relevant details does not repeat them here.In addition, the present invention also can be used in 3D stacking on process technique.Such as: IND1 is first crystal grain (DIE), and IND2 is on second crystal grain (DIE)
Brief summary the present invention, in integrated transformer of the present invention, first inductance itself employs the helical form coiling that first, second metal level is contacted, and the second inductance also at least employs the helical form coiling that the second metal level is formed, therefore, the first inductance and the second inductance can be made under minimum chip area to have maximum inductance value, in addition, the integrated transformer of the present embodiment also has good performance in quality factor and coupling amount, therefore can reduce the manufacturing cost of chip and optimize its element characteristic.
The foregoing is only preferred embodiment of the present invention, all equivalent variations of doing according to the claims in the present invention and modification, all should belong to covering scope of the present invention.
Claims (14)
1. an integrated transformer, includes:
One first inductance, contain the B that is made up of a first metal layer and enclose helical form coiling and the A that is made up of one second metal level encloses coiling, the A be wherein made up of this second metal level encloses inner most A that coiling and the B that this first metal layer is formed enclose helical form coiling, and to enclose coiling overlapping in fact; And
One second inductance, contains the C be at least made up of this second metal level and encloses coiling, and wherein the C be made up of this second metal level circle coiling of this second inductance is overlapping in fact with the part coiling be made up of this first metal layer of this first inductance;
Wherein A is less than B, and A is less than C.
2. integrated transformer as claimed in claim 1, it is also helical form coiling that the A that wherein this second metal level is formed encloses coiling, and the B be made up of this first metal layer encloses helical form coiling encloses coiling by the A that pass through aperture and this second metal level are formed and be connected in series, to form this first inductance.
3. integrated transformer as claimed in claim 1, wherein the innermost circle coiling of this second inductance is in close proximity to the outmost turns coiling of the A be made up of this second metal level circle coiling of this first inductance.
4. integrated transformer as claimed in claim 1, wherein this second inductance further comprises the multiple sections be made up of one the 3rd metal level, wherein the plurality of section is intended for the bridging line of the C be made up of this second metal level circle coiling of this second inductance, and this second metal level is between this first metal layer and the 3rd metal level.
5. integrated transformer as claimed in claim 1, wherein this second inductance further comprises the multiple sections be made up of one the 3rd metal level, wherein the plurality of section is used in parallel with the partial sector that the C be made up of this second metal level of this second inductance encloses in coiling, and this second metal level is between this first metal layer and the 3rd metal level.
6. integrated transformer as claimed in claim 1, wherein this second inductance further comprises the P be made up of one the 3rd metal level and encloses coiling, and the coiling of the P be made up of the 3rd metal level of this second inductance circle is overlapping in fact with the part coiling be made up of this second metal level of this first inductance.
7. integrated transformer as claimed in claim 6, wherein the P be made up of the 3rd metal level of this second inductance encloses coiling and the C be made up of this second metal level of this first inductance to enclose coiling overlapping in fact.
8. integrated transformer as claimed in claim 6, it is helical form coiling that the P that wherein the 3rd metal level is formed encloses coiling, and by this second metal level form C and enclose coiling and enclose coiling by the P that pass through aperture and the 3rd metal level are formed and be connected in series, to form this second inductance.
9. integrated transformer as claimed in claim 1, wherein the central point of this first inductance or this second inductance is connected to a centre cap, and this centre cap is formed by one the 3rd metal level.
10. integrated transformer as claimed in claim 1, wherein this first metal layer is the layer that reroutes, and this second metal level is a super thick metal level.
11. integrated transformers as claimed in claim 1, wherein this first inductance and this second inductance utilize vertical coupled, oblique to be coupled and level is coupled the mutual inductance that formed each other.
12. integrated transformers as claimed in claim 1, wherein this first inductance also comprises the coiling be made up of one the 3rd metal level, and the B be made up of this first metal layer encloses helical form coiling, the A that is made up of this second metal level encloses coiling and the coiling that is made up of the 3rd metal level is one another in series connection, to form this first inductance.
13. integrated transformers as claimed in claim 1, wherein this first inductance also comprises the coiling be made up of one the 3rd metal level, and the B be made up of this first metal layer encloses helical form coiling, the A that is made up of this second metal level encloses coiling and the coiling that is made up of the 3rd metal level is one another in series connection, to form this first inductance; And this second inductance further comprises the C that is made up of the 3rd metal level and encloses helical form coiling, and the C be made up of this second metal level of this second inductance encloses coiling and the C be made up of the 3rd metal level, and to enclose helical form coiling overlapping in fact.
14. integrated transformers as described in claim 1, wherein this second inductance also comprises the coiling be made up of this first metal layer, and the B be made up of this first metal layer that the coiling be made up of this first metal layer of the second inductance is arranged at this first inductance encloses outside helical form coiling.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019007322A1 (en) * | 2017-07-03 | 2019-01-10 | 无锡华润上华科技有限公司 | Stacked spiral inductor |
| CN111863400A (en) * | 2019-04-30 | 2020-10-30 | 瑞昱半导体股份有限公司 | Integrated transformer |
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| US7253712B1 (en) * | 2004-08-31 | 2007-08-07 | Theta Microelectronics, Inc. | Integrated high frequency balanced-to-unbalanced transformers |
| TW200820274A (en) * | 2006-10-26 | 2008-05-01 | United Microelectronics Corp | Planar transformer |
| TWM499690U (en) * | 2014-02-07 | 2015-04-21 | Advanced Connectek Inc | Electrical connector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6396362B1 (en) * | 2000-01-10 | 2002-05-28 | International Business Machines Corporation | Compact multilayer BALUN for RF integrated circuits |
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|---|---|---|---|---|
| US7253712B1 (en) * | 2004-08-31 | 2007-08-07 | Theta Microelectronics, Inc. | Integrated high frequency balanced-to-unbalanced transformers |
| TW200820274A (en) * | 2006-10-26 | 2008-05-01 | United Microelectronics Corp | Planar transformer |
| TWM499690U (en) * | 2014-02-07 | 2015-04-21 | Advanced Connectek Inc | Electrical connector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019007322A1 (en) * | 2017-07-03 | 2019-01-10 | 无锡华润上华科技有限公司 | Stacked spiral inductor |
| US12009129B2 (en) | 2017-07-03 | 2024-06-11 | Csmc Technologies Fab2 Co., Ltd. | Stacked spiral inductor |
| CN111863400A (en) * | 2019-04-30 | 2020-10-30 | 瑞昱半导体股份有限公司 | Integrated transformer |
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| CN105280605B (en) | 2018-10-26 |
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