CN105271725B - The enhanced processing method of solar panels reflex reflector - Google Patents

The enhanced processing method of solar panels reflex reflector Download PDF

Info

Publication number
CN105271725B
CN105271725B CN201510841102.0A CN201510841102A CN105271725B CN 105271725 B CN105271725 B CN 105271725B CN 201510841102 A CN201510841102 A CN 201510841102A CN 105271725 B CN105271725 B CN 105271725B
Authority
CN
China
Prior art keywords
solar panels
low radiation
radiation coated
coated glass
reflex reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510841102.0A
Other languages
Chinese (zh)
Other versions
CN105271725A (en
Inventor
姚升康
孟金波
郜光伟
郭喜民
崔国桥
高飞
陈金
付建荣
张建谱
刘辉
郑军炜
常江
孟增垂
苏阳
张凯华
张海东
刘然
段士崇
张海英
孟凡江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hebei Kun Electric Power Engineering Consulting Co. Ltd
Original Assignee
Hebei Kun Electric Power Engineering Consulting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hebei Kun Electric Power Engineering Consulting Co Ltd filed Critical Hebei Kun Electric Power Engineering Consulting Co Ltd
Priority to CN201510841102.0A priority Critical patent/CN105271725B/en
Publication of CN105271725A publication Critical patent/CN105271725A/en
Application granted granted Critical
Publication of CN105271725B publication Critical patent/CN105271725B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The present invention relates to a kind of intensifying method of device of solar generating accessory, the specifically enhanced processing method of solar panels reflex reflector, by setting arc low radiation coated glass and supporting coordinating the glass ingredient and coating structure specific specific enhanced processing method, so that the efficiency and durability of the reflex reflector are improved so that the solar energy utilization ratio of device of solar generating is substantially improved.

Description

The enhanced processing method of solar panels reflex reflector
Technical field
The invention belongs to clean energy resource field, more particularly to field of solar thermal power generation, and in particular to a kind of solar panels The enhanced processing method of reflex reflector.
Background technology
Current solar panels as device of solar generating be than more conventional, but if due to its horizontal positioned, Easily due to sunshine it is not vertical irradiation and causes energy utilization insufficient, therefore there are many solar panels to pass through to set at present Sloped rotating device and cause solar panels with the movement of sunshine as far as possible remain vertical with sunshine, while in order to Reaching similar purpose also has the devices such as the solar panels of some arcs, and some are there is also at present by reflex reflector to improve each The method of solar energy utilization ratio on direction, curved reflection device is exactly one of which, but current curved reflection device for Solar use efficiency also has certain waste, it is impossible to while transmitted, and used as the accessory of solar panels, durability degree is not It is fine.
The content of the invention
It is an object of the invention to propose a kind of enhanced processing method of solar panels reflex reflector.
Realized especially by following technological means:
The enhanced processing method of solar panels reflex reflector, the solar panels reflex reflector is makes supporting with solar panels Arc low radiation coated glass, comprises the following steps:
(1)Form glass substrate:It is by mass percentage:Al2O3:12 ~ 21%, B2O3:6 ~ 12%, ZnO:6 ~ 8%, SrO: 2 ~ 6%, MgO:1 ~ 3%, CaO:2 ~ 11%, BaO:2 ~ 5%, Sb2O3:0.1 ~ 0.3%, SnO2:1.6 ~ 2.2%, Ce:0.06 ~ 0.09%, it is remaining It is SiO to measure2And inevitably impurity forms arc glass substrate.
(2)Plated film is carried out to glass substrate:The arc low radiation coated glass includes successively from extrados to intrados: Glass substrate, a Si3N4Layer, an ITO indium tin oxide layers, the first oxidation chrome plating, Cu-N barrier layers, silver layer, the second oxidation Chrome plating, the 2nd ITO indium tin oxide layers, the 2nd Si3N4Layer.
(3)Intensive treatment:After plated film, by step(2)The arc low radiation coated glass for obtaining is placed in deep cooling heat treatment In case, after cooling to -50 ~ -80 DEG C, 15 ~ 25min of the temperature is kept, then go out deep cooling heat treatment box, slowly return to room Temperature;Then the arc low radiation coated glass is inserted into vacuum heat heating furnace, 52 ~ 100 DEG C is warmed up to stove, keep the temperature After 20 ~ 30min of degree, furnace cooling to room temperature obtains the arc low radiation coated glass of high intensity.
Wherein, step(3)In the cooling be to be realized by liquid nitrogen.
Supporting solar panels can be following setting:Including:Front layer glass, the photovoltaic being formed on front layer glass are thin Film, rear layer glass, positioned at be provided with photovoltaic film front layer glass and rear layer glass between encapsulation thin slice and for sealing Encapsulate the filler of thin slice.
When realization, the center of circle of the arc low radiation coated glass in solar panels side so that from dorsad The front layer glass that the sunshine for coming reflexes to solar panels by arc low radiation coated glass is irradiated on the direction of solar panels On, and can be irradiated on solar panels through the glass from the next sunshine of arc low radiation coated glass back side illuminaton.
Preferably, the silver thickness is 22 ~ 28nm, first and second Si3N4Thickness degree is 20 ~ 25nm, described Cu-N barrier layer thickness is 16 ~ 22nm.
Effect of the invention is that:
1, by Reasonable adjustment arc low radiation coated glass(Low-E glass)Constituent content so that from the dorsad sun The sunshine for coming is irradiated on the direction of energy plate to be reflexed on the front layer glass of solar panels by arc low radiation coated glass, and And the sunshine come from arc low radiation coated glass back side illuminaton can be irradiated on solar panels through the glass, so that greatly The big sun light utilization efficiency that improve solar panels.
2, by the component content and matched enhanced processing method of reasonable disposition low radiation coated glass substrate (Deep cooling+homogenize)So that its intensity is guaranteed and its light transmittance has obtained certain improvement, is more adapted to low-emission coated Setting;Cause that the bond strength between each layer is further improved, and improves its durable simultaneously by specific enhanced processing method Degree.
By the reasonable setting to low-emission coated layer so that its from glass substrate side irradiation come sunshine transmitted through The glass plate and the more ratios of sunshine come from the irradiation of plated film side are reflexed on solar panels.
Specific embodiment
Embodiment 1
The enhanced processing method of solar panels reflex reflector, the solar panels reflex reflector is makes supporting with solar panels Arc low radiation coated glass, comprises the following steps:
(1)Form glass substrate:It is by mass percentage:Al2O3:19%, B2O3:8%, ZnO:6.8%, SrO:3%, MgO:2%, CaO:9%, BaO:3%, Sb2O3:0.2%, SnO2:1.96%, Ce:0.08%, balance of SiO2And it is inevitably miscellaneous Matter forms arc glass substrate.
(2)Plated film is carried out to glass substrate:The arc low radiation coated glass includes successively from extrados to intrados: Glass substrate, a Si3N4Layer, an ITO indium tin oxide layers, the first oxidation chrome plating, Cu-N barrier layers, silver layer, the second oxidation Chrome plating, the 2nd ITO indium tin oxide layers, the 2nd Si3N4Layer.
(3)Intensive treatment:After plated film, by step(2)The arc low radiation coated glass for obtaining is placed in deep cooling heat treatment In case, by liquid nitrogen cooling to after -59 DEG C, temperature 18min is kept, then go out deep cooling heat treatment box, slowly return to room temperature; Then the arc low radiation coated glass is inserted into vacuum heat heating furnace, 66 DEG C is warmed up to stove, keep temperature 25min Afterwards, furnace cooling obtains the arc low radiation coated glass of high intensity to room temperature.
Embodiment 2
The enhanced processing method of solar panels reflex reflector, the solar panels reflex reflector is makes supporting with solar panels Arc low radiation coated glass, comprises the following steps:
(1)Form glass substrate:It is by mass percentage:Al2O3:15%, B2O3:9%, ZnO:6.2%, SrO:5%, MgO:2.6%, CaO:6%, BaO:3.2%, Sb2O3:0.18%, SnO2:2.0%, Ce:0.069%, balance of SiO2And can not keep away The impurity exempted from forms arc glass substrate.
(2)Plated film is carried out to glass substrate:The arc low radiation coated glass includes successively from extrados to intrados: Glass substrate, a Si3N4Layer, an ITO indium tin oxide layers, the first oxidation chrome plating, Cu-N barrier layers, silver layer, the second oxidation Chrome plating, the 2nd ITO indium tin oxide layers, the 2nd Si3N4Layer;Wherein described silver thickness is 26nm, described first and second Si3N4Thickness degree is 22nm, and the Cu-N barrier layer thickness is 18nm.
(3)Intensive treatment:After plated film, by step(2)The arc low radiation coated glass for obtaining is placed in deep cooling heat treatment In case, by liquid nitrogen cooling to after -62 DEG C, temperature 20min is kept, then go out deep cooling heat treatment box, slowly return to room temperature; Then the arc low radiation coated glass is inserted into vacuum heat heating furnace, 58 DEG C is warmed up to stove, keep temperature 26min Afterwards, furnace cooling obtains the arc low radiation coated glass of high intensity to room temperature.
When realization, the center of circle of the arc low radiation coated glass in solar panels side so that from dorsad The front layer glass that the sunshine for coming reflexes to solar panels by arc low radiation coated glass is irradiated on the direction of solar panels On, and can be irradiated on solar panels through the glass from the next sunshine of arc low radiation coated glass back side illuminaton.

Claims (2)

1. the enhanced processing method of solar panels reflex reflector, it is characterised in that the solar panels reflex reflector is and the sun The energy matching used arc low radiation coated glass of plate, comprises the following steps:
(1)Form glass substrate:It is by mass percentage:Al2O3:12 ~ 21%, B2O3:6 ~ 12%, ZnO:6 ~ 8%, SrO:2 ~ 6%, MgO:1 ~ 3%, CaO:2 ~ 11%, BaO:2 ~ 5%, Sb2O3:0.1 ~ 0.3%, SnO2:1.6 ~ 2.2%, Ce:0.06 ~ 0.09%, it is balance of SiO2And inevitably impurity forms arc glass substrate;
(2)Plated film is carried out to glass substrate:The arc low radiation coated glass includes successively from extrados to intrados:Glass Substrate, a Si3N4Layer, an ITO indium tin oxide layers, the first oxidation chrome plating, Cu-N barrier layers, silver layer, the plating of the second chromium oxide Layer, the 2nd ITO indium tin oxide layers, the 2nd Si3N4Layer;
(3)Intensive treatment:After plated film, by step(2)The arc low radiation coated glass for obtaining is placed in deep cooling heat treatment box, After cooling to -50 ~ -80 DEG C, 15 ~ 25min of the temperature is kept, then go out deep cooling heat treatment box, slowly return to room temperature;So The arc low radiation coated glass is inserted into vacuum heat heating furnace afterwards, 52 ~ 100 DEG C is warmed up to stove, keep the temperature 20 ~ After 30min, furnace cooling to room temperature obtains the arc low radiation coated glass of high intensity.
2. the enhanced processing method of solar panels reflex reflector according to claim 1, it is characterised in that step(3)In The cooling be to be realized by liquid nitrogen;The vacuum heat heating furnace is sensing heating.
CN201510841102.0A 2015-11-28 2015-11-28 The enhanced processing method of solar panels reflex reflector Active CN105271725B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510841102.0A CN105271725B (en) 2015-11-28 2015-11-28 The enhanced processing method of solar panels reflex reflector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510841102.0A CN105271725B (en) 2015-11-28 2015-11-28 The enhanced processing method of solar panels reflex reflector

Publications (2)

Publication Number Publication Date
CN105271725A CN105271725A (en) 2016-01-27
CN105271725B true CN105271725B (en) 2017-07-04

Family

ID=55141650

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510841102.0A Active CN105271725B (en) 2015-11-28 2015-11-28 The enhanced processing method of solar panels reflex reflector

Country Status (1)

Country Link
CN (1) CN105271725B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0322720A3 (en) * 1987-12-25 1990-01-17 Asahi Glass Company Ltd. Electromagnetic wave shielding transparent body
JPH03178430A (en) * 1989-03-07 1991-08-02 Asahi Glass Co Ltd Infrared ray reflecting article
CN102584032B (en) * 2012-02-15 2013-11-13 肇庆市科润真空设备有限公司 Device and method for manufacturing solar arc-shaped condensation glass

Also Published As

Publication number Publication date
CN105271725A (en) 2016-01-27

Similar Documents

Publication Publication Date Title
CN105449010B (en) Stainless steel lining bottom flexible CIGS thin-film solar cell barrier layer preparation method
US20080308147A1 (en) Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
CN101958371B (en) Device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells
CN1703782A (en) Manufacturing apparatus and method for large-scale production of thin-film solar cells
US20110005591A1 (en) Solar Cell Front Contact Doping
CN106756851A (en) A kind of controllable heat control material of emissivity and preparation method thereof
TW201428992A (en) Apparatus and method of forming solar cell
US20110303282A1 (en) Solar glass and manufacturing method thereof
JP5812487B2 (en) Manufacturing method of solar cell
JP2007059484A (en) Solar cell and method of manufacturing the same
CN105271725B (en) The enhanced processing method of solar panels reflex reflector
US9640679B2 (en) Photovoltaic device with oxide layer
CN105355691B (en) A kind of device of solar generating
EP2403014A1 (en) Transparent electrically conductive layer and method for forming same
CN202749383U (en) Colored translucent spectroscopic amorphous silicon thin film solar cell
CN101980368A (en) Copper indium gallium selenide film battery and preparation method thereof
CN103840020A (en) Solar call and method of manufacturing the same
JP5891366B2 (en) Method for producing transparent conductive film and method for producing solar cell
KR20100093240A (en) Thin film solar cells and manufacturing method for the same
KR20110066300A (en) Sodium incorporation process of ci(g)s solar cell
JP2022519048A (en) Equipment, equipment and methods for heat treating multilayers
CN105391382B (en) A kind of solar panels rotating supporting device
Bailey An Advanced Glazing System
CN102856424A (en) Manufacturing method of solar cells
CN204760399U (en) Cavity intelligence photovoltaic module and intelligence photovoltaic module thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information

Inventor after: Yao Shengkang

Inventor after: Liu Hui

Inventor after: Zheng Junwei

Inventor after: Chang Jiang

Inventor after: Meng Zengchui

Inventor after: Su Yang

Inventor after: Zhang Kaihua

Inventor after: Zhang Haidong

Inventor after: Liu Ran

Inventor after: Duan Shichong

Inventor after: Zhang Haiying

Inventor after: Meng Jinbo

Inventor after: Meng Fanjiang

Inventor after: Gao Guangwei

Inventor after: Guo Ximin

Inventor after: Cui Guoqiao

Inventor after: Gao Fei

Inventor after: Chen Jin

Inventor after: Fu Jianrong

Inventor after: Zhang Jianpu

Inventor before: Li Bai

CB03 Change of inventor or designer information
TA01 Transfer of patent application right

Effective date of registration: 20170516

Address after: 050022 Hebei Province, Shijiazhuang city Yuhua District Huai An Road No. 158 Xin International Plaza A block, room 1604, 1602, 1603

Applicant after: Hebei Kun Electric Power Engineering Consulting Co. Ltd

Address before: Jinxiang Qiushi building 26 No. 102299 Beijing city Changping District Road Zhenhai technology company

Applicant before: Li Bai

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant