CN105253889A - Polycrystalline silicon production system and polycrystalline silicon production method - Google Patents
Polycrystalline silicon production system and polycrystalline silicon production method Download PDFInfo
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- CN105253889A CN105253889A CN201410342757.9A CN201410342757A CN105253889A CN 105253889 A CN105253889 A CN 105253889A CN 201410342757 A CN201410342757 A CN 201410342757A CN 105253889 A CN105253889 A CN 105253889A
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Abstract
The present invention provides a polycrystalline silicon production system and a polycrystalline silicon production method. The polycrystalline silicon production system comprises a reduction furnace and a tail gas heat exchanger, wherein the reduction furnace and the tail gas heat exchanger are connected through a first tail gas pipeline, a tail gas output pipeline is connected to the tail gas heat exchanger, the system further comprises a second tail gas pipeline, and the second tail gas pipeline is respectively connected to the first tail gas pipeline and the tail gas output pipeline. According to the present invention, the second tail gas pipeline can shunt the tail gas in the first tail gas pipeline, can make the tail gas in the second tail gas pipeline be not subjected to heat exchange with the material, can reduce the temperature of the tail gas in the first tail gas pipeline, and can correspondingly reduce the heat resource of the tail gas heat exchanger so as to reduce the feeding temperature of the mixing gas in the material conveying pipeline, eliminate the high temperature running safety risks of the first tail gas pipeline and the material conveying pipeline, inhibit the atomization effect, improve the polycrystalline silicon product quality, control the tail gas temperature without the material reducing and the current reducing, and improve the polycrystalline silicon deposition rate, such that the production efficiency can be improved, the energy can be saved, the consumption can be reduced, and the production cost can be reduced.
Description
Technical field
The present invention relates to technical field of polysilicon production, be specifically related to a kind of polycrystalline silicon production system and method.
Background technology
Along with the development of science and technology, the development of solar photovoltaic industry and semi-conductor industry is also more and swifter and more violent, therefore, as solar photovoltaic industry and semi-conductor industry production main raw material---the demand of polysilicon is also increasing.
At present, the production method of polysilicon mostly adopts improved Siemens, and single furnace output, in order to reduce energy consumption, improves in production of polysilicon enterprise, more and more maximizes to the design selection of polycrystalline silicon reducing furnace, by original 3-12 to rod be developed to gradually 24 to rod and more than.Utilize large-scale reduction furnace to produce polysilicon, normally tail gas heat exchanger is connected with exhaust pipe respectively by material pipeline with reduction furnace, and material feeding pipeline is connected with tail gas heat exchanger respectively with tail gas export pipeline.Utilize the high-temperature tail gas of polycrystalline reduction reaction generation in tail gas heat exchanger and material-heat-exchanging, namely material heats up and tail gas cooling, and the material after heat exchange is transported in reduction furnace, and the tail gas after heat exchange exports by tail gas export pipeline.
But, because in large-scale reduction furnace, silicon core quantity is more, when silicon rod grows to the later stage, along with the increase of silicon rod diameter, and the increase of reduction furnace power, the heat in stove in gas field is corresponding increase also, easily gather a large amount of heats in stove, cause temperature too high, correspondingly can produce following problem:
1, silicon rod surface easily forms the particulate state being similar to " puffed rice ", causes silicon rod configuration of surface poor, is unfavorable for that later product is processed, affect polysilicon product quality.
2, the heat taken out of of tail gas is comparatively large, on the one hand, may exceed the high temperature resistant design variable of exhaust pipe, cause explosion hazard, there is potential safety hazard.On the other hand, the temperature entering the tail gas of tail gas heat exchanger is too high, makes mixing of materials temperature spend height, accordingly, can continue again to increase the temperature in reduction furnace.
3, reduction reaction aggravation, trichlorosilane cracking can produce a large amount of silica flours, and spraying effect occurs.Reduction furnace is once atomization, and silica flour will be deposited in chassis of reducing furnace, stove barrel and tail gas heat exchanger, easily causes pipeline, equipment scaling blocks, is using after 2-3, needs quarterly that snaking is once.And long-term atomization can cause tail gas heat exchanger fouling comparatively dark, affects the heat transfer effect of tail gas and material feeding, and then further increase the danger that exhaust pipe blasts.
In order to control atomization, ensure production safety, inlet amount and electric current usually by reducing material reduce exhaust temperature, but the inlet amount reducing material can affect the sedimentation velocity of later stage silicon rod, reduces production efficiency, reduce electric current and power consumption also can be caused to increase.
Existing a kind of polysilicon is prepared in scheme, is by passing into 0.1% ~ 20% hydrogen halide in reduction furnace, suppresses generation and the spraying effect of silica flour in reduction furnace, to change the form on silicon rod surface.But, in reduction furnace, pass into certain hydrogen halide, the quality of polysilicon may be affected, and, if hydrogen halide flow control is improper, the probability of collision of trichlorosilane and hydrogen can be reduced on the contrary, reduce the sedimentation velocity of polysilicon.
Therefore, a kind of production of polysilicon scheme is needed badly, to solve the problems of the technologies described above.
Summary of the invention
The present invention is directed to above shortcomings in prior art, a kind of polycrystalline silicon production system and method are provided, existingly utilize large-scale reduction furnace to realize in polysilicon production process in order to solve, prevent from being atomized, reduce that exhaust temperature and temperature of charge scheme bring production efficiency reduces, power consumption increases, the problem of polysilicon product Quality Down.
The present invention, for solving the problems of the technologies described above, adopts following technical scheme:
The invention provides a kind of polycrystalline silicon production system, comprise: reduction furnace and tail gas heat exchanger, reduction furnace is connected by the first exhaust pipe with tail gas heat exchanger, tail gas export pipeline is connected with tail gas heat exchanger, it is characterized in that, described system also comprises the second exhaust pipe, and the second exhaust pipe is connected with tail gas export pipeline with the first exhaust pipe respectively; Second exhaust pipe can shunt the tail gas in the first exhaust pipe, and the tail gas in the second exhaust pipe can be made not carry out heat exchange with material.
Further, reduction furnace is also connected by Location Detection of Medium Transportation Pipeline with tail gas heat exchanger; Described system also comprises: controller, for detect the temperature of the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline the first temperature-detecting device, for the second temperature-detecting device of detecting the temperature of the first exhaust pipe inner exhaust gas and the tail gas variable valve be arranged on the second exhaust pipe, in controller, be preset with control cycle;
Controller is connected with tail gas variable valve with the first temperature-detecting device, the second temperature-detecting device respectively, for when control cycle arrives, obtain the state that tail gas variable valve is current, and the temperature of the first exhaust pipe inner exhaust gas that the temperature of gas mixture, the second temperature-detecting device detect and the current state of the tail gas variable valve that gets in the Location Detection of Medium Transportation Pipeline detected according to the first temperature-detecting device, regulate the valve opening of tail gas variable valve.
Preferably, be also preset with first threshold and Second Threshold in controller, first threshold is less than Second Threshold;
Controller specifically for, when control cycle arrives, obtain the state that tail gas variable valve is current, in the Location Detection of Medium Transportation Pipeline detect the first temperature-detecting device, the temperature of gas mixture is compared with first threshold, and the temperature of the first exhaust pipe inner exhaust gas detected by the second temperature-detecting device is compared with Second Threshold; When the temperature that the temperature of described gas mixture is greater than first threshold and/or described tail gas is greater than Second Threshold, judges that tail gas variable valve is current and whether be in opened condition, if so, then control tail gas variable valve and increase valve opening, otherwise, control tail gas variable valve and open; When the temperature of described gas mixture is less than or equal to first threshold, and when the temperature of described tail gas is less than or equal to Second Threshold, control tail gas variable valve and keep current valve opening.
Preferably, each gear of tail gas variable valve is also preset with in described controller;
Described controller specifically for, the temperature being greater than first threshold and/or described tail gas when the temperature of described gas mixture is greater than Second Threshold, and tail gas variable valve is current when being in closing condition, controls tail gas variable valve and opens with minimum gear; The temperature being greater than first threshold and/or described tail gas when the temperature of described gas mixture is greater than Second Threshold, and tail gas variable valve is current when being in opened condition, controls tail gas variable valve and promote 1 gear on current gear; When the temperature of described gas mixture is less than or equal to first threshold, and when the temperature of described tail gas is less than or equal to Second Threshold, control tail gas variable valve and keep current gear.
Further, for providing the shunting tail gas water coolant water-line of high-temperature cooling water to the second exhaust pipe.
Preferably, one end of shunting tail gas water coolant water-line is connected with water coolant water-line, one end that the other end is connected with the first exhaust pipe with the second exhaust pipe is connected, in order to be delivered in the chuck of the second exhaust pipe by the high-temperature cooling water in water coolant water-line.
Further, described system also comprises the 3rd temperature-detecting device of the temperature for detecting the second exhaust pipe inner exhaust gas and is arranged at the shunting tail gas cooling sea water regulating valve shunted on tail gas water coolant water-line; When tail gas variable valve is in closing condition and opened condition, shunting tail gas cooling sea water regulating valve is all in opened condition;
Controller respectively with the 3rd temperature-detecting device with shunt tail gas cooling sea water regulating valve and be connected, also for, when control cycle arrives, according to the temperature of the second exhaust pipe inner exhaust gas that the 3rd temperature-detecting device detects, regulate the valve opening of shunting tail gas cooling sea water regulating valve.
Preferably, be also preset with the 3rd threshold value in controller, the 3rd threshold value is less than Second Threshold;
Controller specifically for, when control cycle arrives, the temperature of the second exhaust pipe inner exhaust gas detected by the 3rd temperature-detecting device is compared with the 3rd threshold value, if the temperature of the second exhaust pipe inner exhaust gas is greater than the 3rd threshold value, then controls shunting tail gas cooling sea water regulating valve and increases valve opening; If the temperature of the second exhaust pipe inner exhaust gas is less than or equal to the 3rd threshold value, then controls shunting tail gas cooling sea water regulating valve and keep current valve opening.
Preferably, each gear of shunting tail gas cooling sea water regulating valve is also preset with in controller;
Controller specifically for, when the temperature of the second exhaust pipe inner exhaust gas is greater than the 3rd threshold value, controls shunting tail gas cooling sea water regulating valve and promote 1 gear at current gear; When the temperature of the second exhaust pipe inner exhaust gas is less than or equal to the 3rd threshold value, controls shunting tail gas cooling sea water regulating valve and keep current gear.
The present invention also provides a kind of method for preparing polysilicon, is carrying out, in polycrystalline reduction reaction process, comprising the following steps:
Utilize the second exhaust pipe, the tail gas in the first exhaust pipe transferred out from reduction furnace is shunted, and make the tail gas in the second exhaust pipe not carry out heat exchange with material.
Further, described method also comprises: the temperature detecting the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline, and the temperature detecting the tail gas in the first exhaust pipe;
Describedly utilize the second exhaust pipe, the tail gas in the first exhaust pipe transferred out shunted, specifically comprise from reduction furnace:
When control cycle arrives, obtain the state that the second exhaust pipe is current, and the state current according to the temperature of the gas mixture of trichlorosilane and hydrogen in the Location Detection of Medium Transportation Pipeline detected, the temperature of the first exhaust pipe inner exhaust gas and the second exhaust pipe, regulate the flow of the second exhaust pipe inner exhaust gas.
Preferably, the state that in the Location Detection of Medium Transportation Pipeline that described basis detects, the temperature of the gas mixture of trichlorosilane and hydrogen, the temperature of the first exhaust pipe inner exhaust gas and the second exhaust pipe are current, regulates the flow of the tail gas in the second exhaust pipe, specifically comprises:
By the temperature of described gas mixture in the Location Detection of Medium Transportation Pipeline that detects compared with the first threshold preset, and by the temperature of the first exhaust pipe inner exhaust gas that detects compared with default Second Threshold;
If the temperature that the temperature of described gas mixture is greater than first threshold and/or described tail gas is greater than Second Threshold, then judge that the second exhaust pipe is current and whether be in opening state, if the second exhaust pipe is current be in opening state, then increase the flow of the second exhaust pipe inner exhaust gas, otherwise, open the second exhaust pipe, to shunt tail gas by the second exhaust pipe
If the temperature of described gas mixture is less than or equal to first threshold, and the temperature of described tail gas is less than or equal to Second Threshold, then keep the flow that the second exhaust pipe inner exhaust gas is current.
Further, described method also comprises: provide high-temperature cooling water to the second exhaust pipe, in order to reduce the temperature of the second exhaust pipe inner exhaust gas.
Preferably, after the second exhaust pipe is opened, described method also comprises:
Detect the temperature of the second exhaust pipe inner exhaust gas;
When control cycle arrives, according to the temperature of the second exhaust pipe inner exhaust gas detected, regulate the flow of the high-temperature cooling water of the temperature for reducing the second exhaust pipe inner exhaust gas.
Preferably, the temperature of the second exhaust pipe inner exhaust gas that described basis detects, regulates the flow of the high-temperature cooling water of the temperature for reducing the second exhaust pipe inner exhaust gas, specifically comprises:
By the temperature of the second exhaust pipe inner exhaust gas that detects compared with the 3rd threshold value preset;
If the temperature of the second exhaust pipe inner exhaust gas is greater than the 3rd threshold value, then increase the flow of high-temperature cooling water in the second exhaust pipe; If the temperature of the second exhaust pipe inner exhaust gas is less than or equal to the 3rd threshold value, then keep the flow that in the second exhaust pipe, high-temperature cooling water is current.
The present invention is by setting up the second exhaust pipe, the tail gas transferred out from reduction furnace is shunted, the temperature of the first exhaust pipe inner exhaust gas can be reduced, tail gas in second exhaust pipe does not participate in the heat exchange with material, also the thermal source of corresponding minimizing tail gas heat exchanger, thus the feeding temperature of gas mixture in reduction Location Detection of Medium Transportation Pipeline, eliminate the potential safety hazard of the first exhaust pipe and Location Detection of Medium Transportation Pipeline hot operation, ensure production safety; The reduction of gas mixture feeding temperature directly can affect the decline of gas field temperature in reduction furnace, thus improves silicon rod configuration of surface, improves polysilicon product quality; Suppress spraying effect by the temperature reducing gas field in stove, avoid introducing other Substances Pollution polysilicons, ensure polysilicon product quality; Reduce the probability that stove is atomization, the situation of pipeline, equipment scaling can be alleviated, thus extend the snaking cycle, reduce reduction furnace non-operating time, improve reduction furnace effective rate of utilization.Technical solution of the present invention without the need to by falling material, reduce electric current and control exhaust temperature, polysilicon deposition speed can be improved, thus enhance productivity, save energy and reduce the cost, reduce production cost.
Accompanying drawing explanation
The structural representation of the polycrystalline silicon production system that Fig. 1 provides for the embodiment of the present invention;
One of schematic flow sheet of the method for preparing polysilicon that Fig. 2 provides for the embodiment of the present invention;
The schematic flow sheet two of the method for preparing polysilicon that Fig. 3 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the present invention, carry out clear, complete description to the technical scheme in the present invention, obviously, described embodiment is a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
The present invention utilizes the second exhaust pipe to shunt tail gas, and the thermal source decreased with trichlorosilane and hydrogen heat exchange, thus reduce the feeding temperature of gas mixture in the temperature of the first exhaust pipe inner exhaust gas and Location Detection of Medium Transportation Pipeline, fundamentally eliminate the potential safety hazard of pipeline, enhance productivity and polysilicon product quality, extend the cycle of pipeline, equipment snaking, realize energy-saving and cost-reducing.
The structural representation of the polycrystalline silicon production system that Fig. 1 provides for the embodiment of the present invention, as shown in Figure 1, this polycrystalline silicon production system comprises: reduction furnace 1 and tail gas heat exchanger 2, reduction furnace 1 is connected by the first exhaust pipe 11 with tail gas heat exchanger 2, tail gas export pipeline 12 is connected with tail gas heat exchanger 2, for exporting tail gas.
(in one end that the first exhaust pipe 11 is connected with reduction furnace 1, water coolant water-line 13 is connected with the first exhaust pipe 11, high-temperature cooling water in water coolant water-line 13 can be delivered in the chuck of the first exhaust pipe 11, with the tail gas cooling thought in the first exhaust pipe 11.Wherein, water coolant water-line 13 is connected with the first exhaust pipe 11 with the chassis of reduction furnace 1 respectively, and on the one hand, the chassis that can be reduction furnace 1 provides high-temperature cooling water, on the other hand, also can be the first exhaust pipe 11 and provides high-temperature cooling water.Reduction furnace CWR line 21 is connected with the chassis of reduction furnace 1, for exporting the high-temperature cooling water in chassis of reducing furnace.Tail gas heat exchanger CWR line 19 is connected with tail gas heat exchanger 2, for exporting the high-temperature cooling water in tail gas heat exchanger 2.Reduction furnace CWR line 21 is all connected with CWR line 22 with tail gas heat exchanger CWR line 19, unified by high temperature cooling Water Sproading by CWR line 22.)
This polycrystalline silicon production system also comprises the second exhaust pipe 14, second exhaust pipe 14 and is connected with tail gas export pipeline 12 with the first exhaust pipe 11 respectively.Second exhaust pipe 14 can shunt the tail gas in the first exhaust pipe 11, and the tail gas in the second exhaust pipe 14 does not carry out heat exchange with material.
As shown in Figure 1, this polycrystalline silicon production system can also comprise: hydrogen interchanger 3 and static mixer 4, hydrogen interchanger 3 is arranged on tail gas export pipeline 12, and be connected with static mixer 4 by hydrogen feed line 16, trichlorosilane feeding line 17 is also connected with static mixer 4, for trichlorosilane is delivered to static mixer 4.Hydrogen is delivered to hydrogen interchanger 3 and static mixer 4 by hydrogen feed line 16 successively, specifically, first, in hydrogen interchanger 3, the tail gas utilizing exhaust pipe line 12 to carry is to hydrogen heat exchange, and the tail gas that exhaust pipe line 12 is carried is the tail gas that the tail gas in the first exhaust pipe 11 exports after tail gas heat exchanger 2 heat exchange.Then, the trichlorosilane that the hydrogen after heat exchange is carried through hydrogen feed line 16 and trichlorosilane pipeline 17 again mixes in static mixer 4, forms gas mixture.This gas mixture is transported in tail gas heat exchanger 2, utilizes the heat of the first exhaust pipe 11 inner exhaust gas to after this gas mixture heat exchange, by Location Detection of Medium Transportation Pipeline 18, the gas mixture after heat exchange is delivered to reduction furnace 1, to carry out polycrystalline reduction reaction.
First exhaust pipe 11 not only can carry out heat exchange with material (i.e. the gas mixture of trichlorosilane and hydrogen) in tail gas heat exchanger 2, can also carry out heat exchange in hydrogen interchanger 3 with material (i.e. hydrogen).And the second exhaust pipe 14 is connected with tail gas export pipeline 12, and the tail gas in the second exhaust pipe 14 does not enter hydrogen interchanger 3, not with hydrogen heat exchange.That is, the tail gas in the second exhaust pipe 14 does not carry out heat exchange with material (gas mixture of trichlorosilane and hydrogen and/or hydrogen).
By describing above and can finding out, the embodiment of the present invention is by arranging the second exhaust pipe 14, the tail gas that a part transfers out from reduction furnace 1 can be carried by the second exhaust pipe 14, thus realize the tail gas shunting in the first exhaust pipe 11, to reduce the temperature of the first exhaust pipe 11 inner exhaust gas.And transfer out from reduction furnace 1, by first exhaust pipe 11 carry tail gas need and material-heat-exchanging, therefore, the temperature of the first exhaust pipe 11 inner exhaust gas can affect the feeding temperature of material, and then affects the temperature of gas field in reduction furnace 1.
Therefore, the polycrystalline silicon production system that the embodiment of the present invention provides additionally provides a kind of controlling mechanism of the second exhaust pipe, with according to material feeding temperature in the temperature of the first exhaust pipe 11 inner exhaust gas and Location Detection of Medium Transportation Pipeline 18, control the opportunity of opening of the second exhaust pipe 14 and open degree.
As shown in Figure 1, this polycrystalline silicon production system can also comprise: controller (not illustrating in figure), the first temperature-detecting device 5, second temperature-detecting device 6 and tail gas variable valve 7.First temperature-detecting device 5 can be arranged on Location Detection of Medium Transportation Pipeline 18, for detecting the temperature T1 of the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline 18.Second temperature-detecting device 6 can be arranged on the first exhaust pipe 11, for detecting the temperature T2 of the first exhaust pipe 11 inner exhaust gas.Tail gas variable valve 7 is arranged on the second exhaust pipe 14, for controlling the state (namely in the second exhaust pipe 14 for carrying opening state or the closing condition of the tube layer of tail gas) of the second exhaust pipe 14, and the degree that the second exhaust pipe 14 is opened (namely opening degree for what carry the tube layer of tail gas in the second exhaust pipe 14).
Preferably, the first temperature-detecting device 5 and the second temperature-detecting device 6 can adopt thermometer to realize.
Control cycle is preset with in controller, controller respectively with the first temperature-detecting device 5, second temperature-detecting device 6 is connected with tail gas variable valve 7, for when control cycle arrives, obtain the state that tail gas variable valve 7 is current, and the temperature T1 of gas mixture in the Location Detection of Medium Transportation Pipeline 18 detected according to the first temperature-detecting device 5, the temperature T2 of the first exhaust pipe 11 inner exhaust gas that the second temperature-detecting device 6 detects and the current state of the tail gas variable valve 7 got, regulate the valve opening of tail gas variable valve 7, to control the flow of the second exhaust pipe 14 inner exhaust gas.
It should be noted that, the valve opening of tail gas variable valve 7 is regulated to comprise: the valve opening increasing tail gas variable valve 7, to increase the flow of the second exhaust pipe 14 inner exhaust gas, or, keep the valve opening that tail gas variable valve 7 is current, with the flow keeping the second exhaust pipe 14 inner exhaust gas current.Wherein, the valve opening increasing tail gas variable valve 7 comprises again two kinds of situations: a kind of situation is, the valve opening of tail gas variable valve 7 is increased to a certain aperture (namely control tail gas variable valve 7 and be adjusted to opened condition by closing condition) by 0, thus open the second exhaust pipe 14, increase the flow of the second exhaust pipe 14 inner exhaust gas; Another kind of situation is, when tail gas variable valve 7 is in opened condition, increases the valve opening of tail gas variable valve, thus increases the flow of the second exhaust pipe 14 inner exhaust gas.
Concrete, be preset with first threshold A1 in controller and Second Threshold A2, first threshold A1 are less than Second Threshold A2.First threshold A1 is used for the upper limit as the temperature T1 of the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline 18, and first threshold A1 can be 135-250 DEG C, and preferably, first threshold A1 is chosen to be 230 DEG C.Second Threshold A2 is used for the upper limit as the temperature T2 of the first exhaust pipe 11 inner exhaust gas, and Second Threshold A2 can be 500-600 DEG C, and preferably, Second Threshold A2 is chosen to be 550 DEG C.
Controller specifically for, when control cycle arrives, obtain the state that tail gas variable valve 7 is current, in the Location Detection of Medium Transportation Pipeline 18 detect the first temperature-detecting device 5, the temperature T1 of gas mixture is compared with first threshold A1, and the temperature T2 of the first exhaust pipe 11 inner exhaust gas detected by the second temperature-detecting device 6 is compared with Second Threshold A2; When the temperature T2 that the temperature T1 of described gas mixture is greater than first threshold A1 and/or described tail gas is greater than Second Threshold A2, judge that tail gas variable valve 7 is current and whether be in opened condition, if, then control tail gas variable valve 7 and increase valve opening, otherwise, control tail gas variable valve 7 to open, to open the second exhaust pipe 14.
When the temperature T1 of described gas mixture is less than or equal to first threshold A1, and the temperature T2 of described tail gas is when being less than or equal to Second Threshold A2, illustrate that now Location Detection of Medium Transportation Pipeline 18 and the first exhaust pipe 11 are all in normal operating conditions, do not belong to hot operation, accordingly, in reduction furnace 1, the temperature of gas field is also in the zone of reasonableness of generation spraying effect and silicon rod surface popped rice rate, therefore, in this case, controller can control the valve opening that tail gas variable valve 7 keeps current, without the need to increasing the flow of the second exhaust pipe 14 inner exhaust gas.Now, tail gas variable valve 7 may be in opened condition, namely the second exhaust pipe 14 is opening state, tail gas variable valve 7 also may be in closing condition, and namely the second exhaust pipe 14 is closing condition, and no matter tail gas variable valve 7 is in unlatching or closing condition, all without the need to changing current valve state and valve opening, that is, in this case, controller does not perform any operation to tail gas variable valve 7.
Further, be also preset with each gear of tail gas variable valve 7 in controller, the different valve openings of the different corresponding tail gas variable valve 7 of gear difference, controller can control the valve opening of tail gas variable valve 7 according to the gear preset.
Controller specifically for, the temperature T2 being greater than first threshold A1 and/or described tail gas as the temperature T1 of described gas mixture is greater than Second Threshold A2, and tail gas variable valve 7 is current when being in closing condition, control tail gas variable valve 7 to open with minimum gear, thus open the second exhaust pipe 14, and start to carry tail gas with minimum flow.The temperature T2 being greater than first threshold A1 and/or described tail gas as the temperature T1 of described gas mixture is greater than Second Threshold A2, and tail gas variable valve 7 is current when being in opened condition, control tail gas variable valve 7 and on current gear, raise 1 gear again, to increase the flow of the second exhaust pipe 14 inner exhaust gas.When the temperature T1 of described gas mixture is less than or equal to first threshold A1, and when the temperature T2 of described tail gas is less than or equal to Second Threshold A2, control tail gas variable valve 7 and keep current gear, to keep the flow of the second exhaust pipe 14 inner exhaust gas constant.
By describing above and can finding out, the valve opening of controller or increase tail gas variable valve 7, keep the valve opening that tail gas variable valve 7 is current, there is not the situation of the valve opening reducing tail gas variable valve 7, even if the temperature that in Location Detection of Medium Transportation Pipeline 18, the temperature of gas mixture is reduced to below first threshold and/or the first exhaust pipe 11 inner exhaust gas is reduced to below Second Threshold, also keep the flow that the second exhaust pipe 14 inner exhaust gas is current.
Further, as shown in Figure 1, this polycrystalline silicon production system also comprises: for providing the shunting tail gas water coolant water-line 15 of high-temperature cooling water to the second exhaust pipe 14.
One end of shunting tail gas water coolant water-line 15 is connected with water coolant water-line 13, one end that the other end and the second exhaust pipe 14 are connected with the first exhaust pipe 11 is connected, in order to the high-temperature cooling water in water coolant water-line 13 is delivered in the chuck of the second exhaust pipe 14, thus it is the tail gas cooling in the second exhaust pipe 14.
First exhaust pipe 11 is jacket pipe structure, tube layer conveying tail gas, chuck layer conveying high-temperature cooling water.Water coolant water-line 13 is connected with the first exhaust pipe 11, can provide high-temperature cooling water for the chuck layer of the first exhaust pipe 11, to reduce the temperature of the first exhaust pipe 11 inner exhaust gas.
Second exhaust pipe 14 also can be jacket pipe structure, water coolant water-line 13 by shunting tail gas water coolant water-line 15 for the chuck layer of the second exhaust pipe 14 provides high-temperature cooling water, to reduce the temperature of the second exhaust pipe 14 inner exhaust gas.
One end be connected with tail gas export pipeline 12 of second exhaust pipe 14 is also connected with the second tail gas CWR line 20, second tail gas CWR line 20 can be connected with CWR line 22, can export the high-temperature cooling water in the chuck layer of the second exhaust pipe 14.High-temperature cooling water in reduction furnace CWR line 21, tail gas heat exchanger CWR line 19 and the second tail gas CWR line 20 can gather in CWR line 22, so that follow-up unified recycling.
Further, as shown in Figure 1, this polycrystalline silicon production system also comprises: the 3rd temperature-detecting device 8 and shunting tail gas cooling sea water regulating valve 9,3rd temperature-detecting device can be arranged on the second exhaust pipe 14, for detecting the temperature T3 of the second exhaust pipe 14 inner exhaust gas, shunting tail gas cooling sea water regulating valve 9 is arranged on shunting tail gas water coolant water-line 15, for regulating the flow of the high-temperature cooling water entering the second exhaust pipe 14.It should be noted that, no matter tail gas variable valve 7 is in closing condition or opened condition, all has high-temperature cooling water in the jacket pipe of the second exhaust pipe 14, namely shunts tail gas cooling sea water regulating valve 9 and is all in opened condition.
3rd temperature-detecting device 8 can adopt thermometer to realize.
Controller respectively with the 3rd temperature-detecting device 8 with shunt tail gas cooling sea water regulating valve 9 and be connected, also for, when control cycle arrives, according to the temperature T3 of the second exhaust pipe 14 inner exhaust gas that the 3rd temperature-detecting device 8 detects, regulate the valve opening of shunting tail gas cooling sea water regulating valve 9, thus control the flow of high-temperature cooling water in the second exhaust pipe 14, to ensure that the temperature of the second exhaust pipe 14 is within safety range.
Concrete, be also preset with the upper limit of the 3rd threshold value A the 3, three threshold value A 3 for the temperature T3 as the second exhaust pipe 14 inner exhaust gas in controller.Because the tail gas in the first exhaust pipe 11 is before entering lower procedure, usually also can carries out second time and third time cooling through tail gas heat exchanger 2 and hydrogen interchanger 3, enter engine manifold more afterwards.And the second exhaust pipe 14 is directly connected with engine manifold, high-temperature cooling water is only had to cool the tail gas in the second exhaust pipe 14, tail gas in cooled second exhaust pipe 14 directly enters lower procedure, therefore, the temperature controlling the second exhaust pipe 14 inner exhaust gas is less than the temperature of the first exhaust pipe 11 inner exhaust gas, and namely the 3rd threshold value A 3 is less than Second Threshold A2.In addition, in the second exhaust pipe 14, high-temperature cooling water and tail gas carry out heat exchange, and therefore, the 3rd threshold value A 3 is greater than the initial temperature of high-temperature cooling water in water coolant water-line 13.Usually, in water coolant water-line 13, the initial temperature of high-temperature cooling water is at least 135 DEG C, and namely the 3rd threshold value A 3 is greater than 135 DEG C.3rd threshold value A 3 can be 200-350 DEG C, and preferably, the 3rd threshold value A 3 is chosen to be 300 DEG C.
Controller specifically for, when control cycle arrives, the temperature T3 of the second exhaust pipe 14 inner exhaust gas detected by the 3rd temperature-detecting device 8 is compared with the 3rd threshold value A 3, if the temperature T3 of the second exhaust pipe inner exhaust gas is greater than the 3rd threshold value A 3, then control shunting tail gas cooling sea water regulating valve 9 and increase valve opening, to increase the flow of high-temperature cooling water in the second exhaust pipe 14, to be the tail gas cooling in the second exhaust pipe 14.If the temperature T3 of the second exhaust pipe 14 inner exhaust gas is less than or equal to the 3rd threshold value A 3, then controls shunting tail gas cooling sea water regulating valve 9 and keep current valve opening, to keep the flow that in the second exhaust pipe 14, high-temperature cooling water is current.
Concrete, each gear of shunting tail gas cooling sea water regulating valve 9 is also preset with in controller, the different valve openings of different gear correspondence shunting tail gas cooling sea water regulating valves 9, it should be noted that, when tail gas variable valve 7 is in closing condition, shunting tail gas cooling sea water regulating valve 9 is opened with minimum gear.
Controller specifically for, when the temperature T3 of the second exhaust pipe 14 inner exhaust gas is greater than the 3rd threshold value A 3, illustrate that the temperature T3 of now the second exhaust pipe 14 inner exhaust gas is too high, control shunting tail gas cooling sea water regulating valve 9 and promote 1 gear at current gear, to increase the flow of high-temperature cooling water in the second exhaust pipe 14, so that effectively to the tail gas cooling in the second exhaust pipe 14.When the temperature T3 of the second exhaust pipe 14 inner exhaust gas is less than or equal to the 3rd threshold value A 3, illustrate that the temperature T3 of now the second exhaust pipe 14 inner exhaust gas is in normal range, control shunting tail gas cooling sea water regulating valve 9 and keep current gear, to keep the flow that in the second exhaust pipe 14, high-temperature cooling water is current.
By describing above and can finding out, the embodiment of the present invention is the temperature of the gas mixture of trichlorosilane and hydrogen in temperature by monitoring the first exhaust pipe 11 inner exhaust gas and Location Detection of Medium Transportation Pipeline 18, control the flow of the tail gas that the second exhaust pipe 14 is shunted, thus reduce the temperature of the gas mixture of trichlorosilane and hydrogen in the temperature of the first exhaust pipe 11 inner exhaust gas and Location Detection of Medium Transportation Pipeline 18, and, by increasing the flow of high-temperature cooling water in the second exhaust pipe 14, reduce the temperature of the second exhaust pipe 14 inner exhaust gas.
The embodiment of the present invention also provides a kind of method for preparing polysilicon, the method is applied in polysilicon reaction process, comprise the following steps: utilize the second exhaust pipe 14, tail gas in the first exhaust pipe 11 transferred out from reduction furnace 1 is shunted, and the tail gas in the second exhaust pipe 14 does not carry out heat exchange with material.
Below in conjunction with Fig. 2, be described in detail to the method, as shown in Figure 2, the method also comprises step 201:
Step 201, detects the temperature T1 of the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline, and detects the temperature T2 of the tail gas transferred out from reduction furnace in the first exhaust pipe.
Concrete, the first temperature-detecting device 5 can be utilized to detect the temperature T1 of the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline 18, and utilize the second temperature-detecting device 6 to detect the temperature T2 of the tail gas transferred out from reduction furnace in the first exhaust pipe 11.
Describedly utilize the second exhaust pipe, the tail gas in the first exhaust pipe transferred out shunted, specifically comprise from reduction furnace:
Step 202 ~ 203, when control cycle arrives, obtain for the current state of the second exhaust pipe of shunting the first exhaust pipe inner exhaust gas, and according to the temperature T2 of the tail gas in the temperature T1 of the gas mixture of the trichlorosilane in the Location Detection of Medium Transportation Pipeline detected and hydrogen, the first exhaust pipe and the current state of the second exhaust pipe, regulate the flow of the second exhaust pipe inner exhaust gas.
Concrete, when control cycle arrives, controller determines by the state obtaining tail gas variable valve 7 current the state that second exhaust pipe is current, and the temperature T2 of tail gas in the first exhaust pipe 11 that in the Location Detection of Medium Transportation Pipeline 18 detected according to the current state of tail gas variable valve 7, the first temperature-detecting device 5, the temperature T1 of gas mixture and the second temperature-detecting device 6 detect, control tail gas variable valve 7, thus regulate the flow of the second exhaust pipe inner exhaust gas.
In order to clearly demonstrate technical scheme of the present invention, below in conjunction with Fig. 3, be described in detail to the flow process of the method for preparing polysilicon that the embodiment of the present invention provides, as shown in Figure 3, this flow process comprises the following steps:
Step 301, detects the temperature T1 of the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline.
Step 302, detects the temperature T2 of the tail gas transferred out from reduction furnace in the first exhaust pipe.
It should be noted that, first temperature-detecting device 5 and the second temperature-detecting device 6 detect according to the sense cycle preset respectively, and the sense cycle of the two can be set to identical, also can be set to difference, namely step 301 is not limit with the execution sequence of step 302, also can perform simultaneously.
Step 303, when control cycle arrives, obtains the state that the second exhaust pipe is current.
Concrete, when control cycle arrives, controller obtains the current state of the second exhaust pipe 14 by the state obtaining tail gas variable valve 7 current.
Step 304, by the temperature T1 of described gas mixture in the Location Detection of Medium Transportation Pipeline 18 that detects compared with the first threshold A1 preset, and by the temperature T2 of the first exhaust pipe 11 inner exhaust gas that detects compared with the Second Threshold A2 preset, if the temperature T2 that in described Location Detection of Medium Transportation Pipeline 18, the temperature T1 of gas mixture is greater than first threshold A1 and/or described first exhaust pipe 11 inner exhaust gas is greater than Second Threshold A2, then perform step 306; Otherwise, perform step 305.
Concrete, if controller judges that the temperature T2 that the temperature T1 of gas mixture in Location Detection of Medium Transportation Pipeline 18 is greater than first threshold A1 and/or described first exhaust pipe 11 inner exhaust gas is greater than Second Threshold A2, then judge the state that the second exhaust pipe 14 is current further, namely perform step 306; If controller judges that the temperature T1 of gas mixture in Location Detection of Medium Transportation Pipeline 18 is less than or equal to first threshold A1, and the temperature T2 of the first exhaust pipe 11 inner exhaust gas is less than or equal to Second Threshold A2, then do not perform any operation, namely performs step 305.
Step 305, the state keeping the second exhaust pipe current and the current flow of second pipeline inner exhaust gas.
Concrete, controller does not perform any operation to tail gas variable valve 7, with the state keeping the second exhaust pipe 14 current and the current flow of second pipeline 14 inner exhaust gas.
Step 306, judges that the second exhaust pipe is current and whether is in opening state, if the second exhaust pipe is current be in opening state, then performs step 307; Otherwise, then step 308 is performed.
Concrete, if controller judges that tail gas variable valve 7 is in opened condition, illustrate that the second exhaust pipe 14 is in opening state, then increase the flow of the second exhaust pipe 14 inner exhaust gas, namely perform step 307; If controller judges that tail gas variable valve 7 is in closing condition, illustrate that the second exhaust pipe 14 is in closing condition, then open the second exhaust pipe 14, namely perform step 308.
Step 307, increases the flow of the second exhaust pipe inner exhaust gas.
Concrete, controller, by increasing the valve opening of tail gas variable valve 7, increases the flow of the second exhaust pipe 14 inner exhaust gas.
Step 308, opens the second exhaust pipe.
Concrete, controller is opened by controlling tail gas variable valve 7, opens the second exhaust pipe 14, to carry tail gas by the second exhaust pipe 14, thus realizes tail gas shunting.
Further, this method for preparing polysilicon can also comprise the following steps: provide high-temperature cooling water to the second exhaust pipe, in order to reduce the temperature of the second exhaust pipe inner exhaust gas.
After the second exhaust pipe 14 is opened (namely after step 308), can also by the temperature T3 of monitoring second exhaust pipe 14 inner exhaust gas, control the flow of high-temperature cooling water in the second exhaust pipe 14, thus the temperature of the second exhaust pipe 14 inner exhaust gas is controlled within safety range.
Therefore, as shown in Figure 3, this production of polysilicon flow process can also comprise the following steps:
Step 309, detects the temperature of the second exhaust pipe inner exhaust gas.
Concrete, the 3rd temperature-detecting device 8 can be utilized to detect the temperature T3 of the second exhaust pipe 14 inner exhaust gas.
Step 310, when control cycle arrives, by the temperature T3 of the second exhaust pipe inner exhaust gas that detects compared with the 3rd threshold value A 3 preset, if the temperature T3 of the second exhaust pipe inner exhaust gas is greater than the 3rd threshold value A 3, then performs step 311; Otherwise, perform step 312.
Concrete, when control cycle arrives, if controller judges that the temperature T3 of the second exhaust pipe 14 inner exhaust gas is greater than the 3rd threshold value A 3, then increase the flow of high-temperature cooling water in the second exhaust pipe 14, namely perform step 311; If controller judges that the temperature T3 of the second exhaust pipe 14 inner exhaust gas is less than or equal to the 3rd threshold value A 3, then do not perform any operation, namely perform step 312.
Step 311, increases the flow of high-temperature cooling water in the second exhaust pipe.
Concrete, controller, by increasing the valve opening of shunting tail gas cooling sea water regulating valve 9, increases the flow of high-temperature cooling water in the second exhaust pipe 14, to strengthen the dynamics of cooling second exhaust pipe 14 inner exhaust gas temperature.
Step 312, keeps the flow that in the second exhaust pipe, high-temperature cooling water is current.
Concrete, controller does not perform any operation to shunting tail gas cooling sea water regulating valve 9, to keep shunting the current valve opening of tail gas cooling sea water regulating valve 9, thus keeps the flow that in the second exhaust pipe 14, high-temperature cooling water is current.
In the initial period of production of polysilicon, because the silicon rod as deposition vehicle is thinner, inlet amount and tail gas amount all less, the heat of reduction furnace inner accumulated is less, the higher deposition reaction to polysilicon of temperature of gas mixture is more favourable, therefore, in polysilicon initial reaction stage (for 24 to rod, initial reaction stage is approximately 40h), not easily be atomized in reduction furnace, mixture temperature and exhaust temperature also all in normal range, without the need to reducing exhaust temperature to control atomization by opening the second exhaust pipe 14.
Along with the carrying out of polysilicon reaction, there will be following two kinds of situations:
One be, polycrystalline silicon rod is after initial reaction stage growth during this period of time, the inlet amount of gas mixture reaches maximum value, silicon rod diameter also reaches about 60mm, spacing between silicon rod starts to diminish, the in-furnace temperature that now reduces is more and more higher, the heat taken out of with tail gas also increases thereupon, tail gas and the abundant heat exchange of gas mixture, mixture temperature straight line is caused to rise, reach the highest design temperature of gas mixture charging, Location Detection of Medium Transportation Pipeline 18 and the first exhaust pipe 11 long term high temperature run, and there is potential safety hazard.
Two are, after reduction furnace 1 uses some cycles, due to atomization, cause on the first exhaust pipe 11 and adhere to silica flour from level to level gradually, treat that silica flour is more and more thicker, the effect of tail gas and gas mixture heat exchange worse and worse, although feeding temperature can control, the temperature of the first exhaust pipe 11 inner exhaust gas because of heat less, temperature sharply rises, for 24 concerning the reduction reaction of silicon rod, often after 50h, tail gas just can reach more than 600 degree, has exceeded the design load of exhaust pipe.
Between above-mentioned two situations, for reducing gas mixture and exhaust temperature, by opening the second exhaust pipe 14, reduce the amount that the first exhaust pipe 11 carries tail gas, thus reduce the temperature of mixing tank feeding temperature and the first exhaust pipe 11 inner exhaust gas, so both ensured safety in production, and do not needed again to fall material and produce.In addition, also by monitoring the temperature of the second exhaust pipe 14 inner exhaust gas, regulate the flow of high-temperature cooling water, thus avoid the temperature of shunting tail gas in the second exhaust pipe 14 too high.
Reaction end gas in reduction furnace 1 is being gone out chassis time-division two portions by the present invention, a part is carried via the first exhaust pipe 11, by the gas mixture heat exchange of tail gas heat exchanger 2 and trichlorosilane and hydrogen, again by after hydrogen interchanger 3 and hydrogen heat exchange, enter tail gas recycle operation via tail gas export pipeline 12; Another part is carried via the second exhaust pipe 14, does not carry out heat exchange with material, only carries out heat exchange with high-temperature cooling water, then gathers downstream exhaust gas recovery process with tail gas export pipeline 12.The present invention is by shunting tail gas, decrease the thermal source with the gas mixture heat exchange of trichlorosilane and hydrogen, the later stage does not need to control mixture temperature and exhaust temperature by falling material, eliminates potential safety hazard, later stage doses abundance also can improve sedimentation velocity, provides production efficiency.In addition, by controlling the feeding temperature of gas mixture, also suitably can reduce gas field temperature in stove, on the one hand, silicon rod configuration of surface can be improved, improve polysilicon product quality, on the other hand, reduce atomization probability, thus alleviate the situation of pipeline, equipment scaling, also can avoid introducing other Substances Pollution polysilicons, ensure polysilicon product quality.When in the first exhaust pipe 11, the silicon powder deposit of deposition is thicker, adjustable enters the tail gas amount of the second exhaust pipe 14, make the temperature of the first pipeline 11 inner exhaust gas within the scope of processing requirement, when in the second exhaust pipe 14, the silica flour of deposition reaches certain thickness, carry out again unifying block clearing, thus extend the cycle of snaking, reduce reduction furnace non-operating time, improve reduction furnace effective rate of utilization.This programme without the need to by falling material, reduce electric current and control exhaust temperature, polysilicon deposition speed can be improved, thus enhance productivity, save energy and reduce the cost, reduce production cost.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (15)
1. a polycrystalline silicon production system, comprise: reduction furnace and tail gas heat exchanger, reduction furnace is connected by the first exhaust pipe with tail gas heat exchanger, tail gas export pipeline is connected with tail gas heat exchanger, it is characterized in that, described system also comprises the second exhaust pipe, and the second exhaust pipe is connected with tail gas export pipeline with the first exhaust pipe respectively; Second exhaust pipe can shunt the tail gas in the first exhaust pipe, and the tail gas in the second exhaust pipe can be made not carry out heat exchange with material.
2. the system as claimed in claim 1, is characterized in that, reduction furnace is also connected by Location Detection of Medium Transportation Pipeline with tail gas heat exchanger; Described system also comprises: controller, for detect the temperature of the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline the first temperature-detecting device, for the second temperature-detecting device of detecting the temperature of the first exhaust pipe inner exhaust gas and the tail gas variable valve be arranged on the second exhaust pipe, in controller, be preset with control cycle;
Controller is connected with tail gas variable valve with the first temperature-detecting device, the second temperature-detecting device respectively, for when control cycle arrives, obtain the state that tail gas variable valve is current, and the temperature of the first exhaust pipe inner exhaust gas that the temperature of gas mixture, the second temperature-detecting device detect and the current state of the tail gas variable valve that gets in the Location Detection of Medium Transportation Pipeline detected according to the first temperature-detecting device, regulate the valve opening of tail gas variable valve.
3. system as claimed in claim 2, it is characterized in that, be also preset with first threshold and Second Threshold in controller, first threshold is less than Second Threshold;
Controller specifically for, when control cycle arrives, obtain the state that tail gas variable valve is current, in the Location Detection of Medium Transportation Pipeline detect the first temperature-detecting device, the temperature of gas mixture is compared with first threshold, and the temperature of the first exhaust pipe inner exhaust gas detected by the second temperature-detecting device is compared with Second Threshold; When the temperature that the temperature of described gas mixture is greater than first threshold and/or described tail gas is greater than Second Threshold, judges that tail gas variable valve is current and whether be in opened condition, if so, then control tail gas variable valve and increase valve opening, otherwise, control tail gas variable valve and open; When the temperature of described gas mixture is less than or equal to first threshold, and when the temperature of described tail gas is less than or equal to Second Threshold, control tail gas variable valve and keep current valve opening.
4. system as claimed in claim 3, is characterized in that, be also preset with each gear of tail gas variable valve in described controller;
Described controller specifically for, the temperature being greater than first threshold and/or described tail gas when the temperature of described gas mixture is greater than Second Threshold, and tail gas variable valve is current when being in closing condition, controls tail gas variable valve and opens with minimum gear; The temperature being greater than first threshold and/or described tail gas when the temperature of described gas mixture is greater than Second Threshold, and tail gas variable valve is current when being in opened condition, controls tail gas variable valve and promote 1 gear on current gear; When the temperature of described gas mixture is less than or equal to first threshold, and when the temperature of described tail gas is less than or equal to Second Threshold, control tail gas variable valve and keep current gear.
5. system as claimed in claim 3, it is characterized in that, described system also comprises: for providing the shunting tail gas water coolant water-line of high-temperature cooling water to the second exhaust pipe.
6. system as claimed in claim 5, it is characterized in that, one end of shunting tail gas water coolant water-line is connected with water coolant water-line, one end that the other end is connected with the first exhaust pipe with the second exhaust pipe is connected, in order to be delivered in the chuck of the second exhaust pipe by the high-temperature cooling water in water coolant water-line.
7. system as claimed in claim 5, is characterized in that, the 3rd temperature-detecting device that described system also comprises the temperature for detecting the second exhaust pipe inner exhaust gas and the shunting tail gas cooling sea water regulating valve be arranged on shunting tail gas water coolant water-line; When tail gas variable valve is in closing condition and opened condition, shunting tail gas cooling sea water regulating valve is all in opened condition;
Controller respectively with the 3rd temperature-detecting device with shunt tail gas cooling sea water regulating valve and be connected, also for, when control cycle arrives, according to the temperature of the second exhaust pipe inner exhaust gas that the 3rd temperature-detecting device detects, regulate the valve opening of shunting tail gas cooling sea water regulating valve.
8. system as claimed in claim 7, it is characterized in that, be also preset with the 3rd threshold value in controller, the 3rd threshold value is less than Second Threshold;
Controller specifically for, when control cycle arrives, the temperature of the second exhaust pipe inner exhaust gas detected by the 3rd temperature-detecting device is compared with the 3rd threshold value, if the temperature of the second exhaust pipe inner exhaust gas is greater than the 3rd threshold value, then controls shunting tail gas cooling sea water regulating valve and increases valve opening; If the temperature of the second exhaust pipe inner exhaust gas is less than or equal to the 3rd threshold value, then controls shunting tail gas cooling sea water regulating valve and keep current valve opening.
9. system as claimed in claim 8, is characterized in that, is also preset with each gear of shunting tail gas cooling sea water regulating valve in controller;
Controller specifically for, when the temperature of the second exhaust pipe inner exhaust gas is greater than the 3rd threshold value, controls shunting tail gas cooling sea water regulating valve and promote 1 gear at current gear; When the temperature of the second exhaust pipe inner exhaust gas is less than or equal to the 3rd threshold value, controls shunting tail gas cooling sea water regulating valve and keep current gear.
10. a method for preparing polysilicon, is characterized in that, is carrying out, in polycrystalline reduction reaction process, comprising the following steps:
Utilize the second exhaust pipe, the tail gas in the first exhaust pipe transferred out from reduction furnace is shunted, and make the tail gas in the second exhaust pipe not carry out heat exchange with material.
11. methods as claimed in claim 10, it is characterized in that, described method also comprises: the temperature detecting the gas mixture of trichlorosilane and hydrogen in Location Detection of Medium Transportation Pipeline, and the temperature detecting the tail gas in the first exhaust pipe;
Describedly utilize the second exhaust pipe, the tail gas in the first exhaust pipe transferred out shunted, specifically comprise from reduction furnace:
When control cycle arrives, obtain the state that the second exhaust pipe is current, and the state current according to the temperature of the gas mixture of trichlorosilane and hydrogen in the Location Detection of Medium Transportation Pipeline detected, the temperature of the first exhaust pipe inner exhaust gas and the second exhaust pipe, regulate the flow of the second exhaust pipe inner exhaust gas.
12. methods as claimed in claim 11, it is characterized in that, the state that in the Location Detection of Medium Transportation Pipeline that described basis detects, the temperature of the gas mixture of trichlorosilane and hydrogen, the temperature of the first exhaust pipe inner exhaust gas and the second exhaust pipe are current, regulate the flow of the tail gas in the second exhaust pipe, specifically comprise:
By the temperature of described gas mixture in the Location Detection of Medium Transportation Pipeline that detects compared with the first threshold preset, and by the temperature of the first exhaust pipe inner exhaust gas that detects compared with default Second Threshold;
If the temperature that the temperature of described gas mixture is greater than first threshold and/or described tail gas is greater than Second Threshold, then judge that the second exhaust pipe is current and whether be in opening state, if the second exhaust pipe is current be in opening state, then increase the flow of the second exhaust pipe inner exhaust gas, otherwise, open the second exhaust pipe, to shunt tail gas by the second exhaust pipe
If the temperature of described gas mixture is less than or equal to first threshold, and the temperature of described tail gas is less than or equal to Second Threshold, then keep the flow that the second exhaust pipe inner exhaust gas is current.
13. methods as claimed in claim 12, it is characterized in that, described method also comprises: provide high-temperature cooling water to the second exhaust pipe, in order to reduce the temperature of the second exhaust pipe inner exhaust gas.
14. methods as claimed in claim 13, it is characterized in that, after the second exhaust pipe is opened, described method also comprises:
Detect the temperature of the second exhaust pipe inner exhaust gas;
When control cycle arrives, according to the temperature of the second exhaust pipe inner exhaust gas detected, regulate the flow of the high-temperature cooling water of the temperature for reducing the second exhaust pipe inner exhaust gas.
15. methods as claimed in claim 14, is characterized in that, the temperature of the second exhaust pipe inner exhaust gas that described basis detects, regulates the flow of the high-temperature cooling water of the temperature for reducing the second exhaust pipe inner exhaust gas, specifically comprise:
By the temperature of the second exhaust pipe inner exhaust gas that detects compared with the 3rd threshold value preset;
If the temperature of the second exhaust pipe inner exhaust gas is greater than the 3rd threshold value, then increase the flow of high-temperature cooling water in the second exhaust pipe; If the temperature of the second exhaust pipe inner exhaust gas is less than or equal to the 3rd threshold value, then keep the flow that in the second exhaust pipe, high-temperature cooling water is current.
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| CN107352545A (en) * | 2016-05-09 | 2017-11-17 | 新特能源股份有限公司 | Using the method and polycrystalline silicon reduction system of polycrystalline silicon reduction system production polysilicon |
| CN107512719A (en) * | 2016-06-15 | 2017-12-26 | 新特能源股份有限公司 | Polycrystalline silicon reduction exhaust residual-heat utilization method and system |
| CN111596636A (en) * | 2020-06-19 | 2020-08-28 | 亚洲硅业(青海)股份有限公司 | Polycrystalline silicon reduction furnace control method and device and electronic equipment |
| CN115092931A (en) * | 2022-06-29 | 2022-09-23 | 新特能源股份有限公司 | Novel control method and control system for producing polycrystalline silicon |
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| CN202988746U (en) * | 2012-11-06 | 2013-06-12 | 陕西天宏硅材料有限责任公司 | Tail gas shock cooling device of polycrystalline silicon reducing furnace and heating hydrogenation furnace |
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| CN107352545A (en) * | 2016-05-09 | 2017-11-17 | 新特能源股份有限公司 | Using the method and polycrystalline silicon reduction system of polycrystalline silicon reduction system production polysilicon |
| CN107512719A (en) * | 2016-06-15 | 2017-12-26 | 新特能源股份有限公司 | Polycrystalline silicon reduction exhaust residual-heat utilization method and system |
| CN107512719B (en) * | 2016-06-15 | 2019-11-12 | 新特能源股份有限公司 | Polycrystalline silicon reduction exhaust residual-heat utilization method and system |
| CN111596636A (en) * | 2020-06-19 | 2020-08-28 | 亚洲硅业(青海)股份有限公司 | Polycrystalline silicon reduction furnace control method and device and electronic equipment |
| CN115092931A (en) * | 2022-06-29 | 2022-09-23 | 新特能源股份有限公司 | Novel control method and control system for producing polycrystalline silicon |
| CN115092931B (en) * | 2022-06-29 | 2023-10-27 | 新特能源股份有限公司 | Control method and control system for producing polycrystalline silicon |
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Application publication date: 20160120 Assignee: Xinte silicon based new materials Co.,Ltd. Assignor: XINTE ENERGY Co.,Ltd. Contract record no.: X2023990000586 Denomination of invention: A polycrystalline silicon production system and method Granted publication date: 20180105 License type: Common License Record date: 20230605 |