CN105244393A - Polymide solar cell and preparation method thereof - Google Patents
Polymide solar cell and preparation method thereof Download PDFInfo
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- CN105244393A CN105244393A CN201410247125.4A CN201410247125A CN105244393A CN 105244393 A CN105244393 A CN 105244393A CN 201410247125 A CN201410247125 A CN 201410247125A CN 105244393 A CN105244393 A CN 105244393A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of solar cells, and particularly relates to a polymide solar cell. The polymide solar cell comprises a polymide substrate, a diffusion barrier layer, a first electrode layer, an absorption layer, a buffer layer, a second electrode layer, an anti-reflection layer and a surface electrode layer, wherein the diffusion barrier layer, the first electrode layer, the absorption layer, the buffer layer, the second electrode layer, the anti-reflection layer and the surface electrode layer are formed on the polymide substrate in sequence, the diffusion barrier layer is in a structure with three or more layers, each layer of the diffusion barrier layer is prepared by materials randomly selecting from the following groups: aluminum, molybdenum, titanium, nickel, copper, zirconium, niobium, chromium, ruthenium, rhodium, palladium, tantalum, tungsten, iridium, osmium, platinum, gold or silver, or alloys thereof; nitrides, oxides or carbides of silicon; and titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride. According to the polymide solar cell disclosed by the invention, the diffusion barrier layer can effectively prevent impurity elements of the substrate from getting into the absorption layer, and a binding force of the diffusion barrier layer with the substrate and the first electrode layer can be significantly improved. Meanwhile, the invention provides a preparation method of the polymide solar cell and a diffusion barrier layer of the polymide solar cell.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly a kind of polyimides solar cell and preparation method thereof.
Background technology
Along with the continuous increase of mankind's energy resource consumption, such as the exhausting of fossil fuel of the non-renewable energy is problem demanding prompt solution.Fossil energy total amount consumed will in about flex point appears in the year two thousand thirty, and the proportion of regenerative resource will constantly rise, and wherein, the proportion of solar energy in future source of energy structure is by increasing, and this proportion of conservative estimation can more than 60% in 2100.Solar energy is the energy the abundantest in numerous regenerative resource, and the global sunlight energy of a hour is just equivalent to the earth energy consumption of a year, far away higher than wind energy, underground heat, water power, oceanic energy, biological energy source equal energy source.
The important development direction of solar cell is multiduty flexible substrates solar cell.Be using rigid material (glass etc.) as the difference of substrate with conventional solar cell, the base material of flexible solar cell is softness, flexible tinsel or high-molecular organic material, such as stainless steel foil, aluminium foil, polyimide film etc.Flexible solar cell is a kind of high-end photovoltaic products, and it has following clear superiority: (1) battery component can bend, and is applicable to nonplanar mounting condition; (2) battery component lightweight, quality is higher than power; (3) backing material consumption is little, with low cost.
Flexible solar cell has departed from traditional backing material glass, it is made to possess the characteristic of light flexible song, but also bring new problem: a large amount of some elements existed in flexible metal basement simultaneously, such as Fe, spread to absorbed layer by metal electrode in the high-temperature technology easily prepared at battery, cause absorbed layer deep energy level to adulterate, greatly affect the photoelectric properties of battery.And this impact is almost negligible for soda-lime glass substrate.Therefore, the barrier layer that polyimides solar cell needs one deck elevated chemical stable, to prevent the diffusion of the harmful element being similar to Fe.
Patent CN101268608A discloses a kind of photovoltaic device having conductive barrier layers and have aluminum foil substrate.Disclosed in this patent, barrier layer is applicable to aluminum foil substrate, and is not suitable for other flexible substrates, such as polyimides substrate.Reason is, the thermal coefficient of expansion of polyimides substrate is different from aluminium foil, and the diffusion impervious layer being therefore applicable to aluminium foil can not adapt to polyimides substrate, and this often causes the adhesion of diffusion impervious layer and polyimides substrate inadequate.
Therefore, while effectively preventing the impurity element of polyimide base substrate from being spread to absorbed layer by metal electrode in high-temperature technology, add the adhesion problem of high containment and polyimides substrate and the first electrode layer further, still need and will explore further.
Summary of the invention
Main purpose of the present invention is for the blocking effect of the diffusion impervious layer of the polyimides solar cell existed in above-mentioned prior art and the undesirable problem of adhesion, a kind of polyimides solar cell and preparation method thereof is provided, meanwhile, the invention provides a kind of polyimides solar cell diffusion impervious layer.
In order to realize foregoing invention object, the technical solution used in the present invention is as follows:
Polyimides solar cell, the diffusion impervious layer comprising polyimides substrate and formed successively in polyimides substrate, the first electrode layer, absorbed layer, resilient coating, the second electrode lay, anti-reflection layer and surface electrode layer, described diffusion impervious layer is more than three layers or three layers structures, and every one deck of described diffusion impervious layer is optionally made by following group:
A group: aluminium, molybdenum, titanium, nickel, copper, zirconium, niobium, chromium, ruthenium, rhodium, palladium, tantalum, tungsten, iridium, osmium, platinum, gold or silver-colored, or their alloy; Or
B group: the nitride of silicon, oxide or carbide; Or
C group: titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride;
The thickness of described diffusion impervious layer is 10nm ~ 3000nm.
Polyimides solar cell of the present invention, select the diffusion impervious layer of sandwich construction, and select the composition of diffusion impervious layer, the polyimides solar cell that the present invention obtains, its diffusion impervious layer can effectively prevent the impurity element of polyimides substrate from entering absorbed layer, thus reduce the destruction of these impurity elements to absorbed layer, improve the performance of battery.
As preferably, aforesaid polyimides solar cell, described first electrode layer is molybdenum film layer.
As preferably, aforesaid polyimides solar cell, described diffusion impervious layer is three-decker, comprises near basalis, intermediate layer and near the first electrode layer.Polyimides solar cell of the present invention, diffusion impervious layer is by optimum selecting three-layer structure, effectively can not only prevent the impurity element of polyimides substrate from entering absorbed layer, and meanwhile, effectively can improve the adhesion of diffusion impervious layer and polyimides substrate and the first electrode layer.
As preferably, aforesaid polyimides solar cell, the intermediate layer of described diffusion impervious layer is made up of any one of titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride.By the aforementioned component of preferred interlayer, the impurity element of polyimides substrate effectively can be stoped in the high temperature preparation process of copper indium gallium selenide cell to diffuse to absorbed layer, affect the performance of battery.
As preferably, aforesaid polyimides solar cell, the close basalis of described diffusion impervious layer is made up of titanium, titanium nitride or tantalum nitride.Inventor is found by large quantity research, the thermal coefficient of expansion of titanium, titanium nitride and titanizing tantalum differs less with polyimides, thus combine better, and these materials in the high temperature preparation process of solar cell not with selenium generation chemical reaction, the performance of battery and the adhesion of rete can not be affected.
As preferably, aforesaid polyimides solar cell, being made up of titanium, chromium or titanium nitride near the first electrode layer of described diffusion impervious layer.The present invention is by preferred close first electrode layer, because titanium and chromium, titanium nitride are all grown to columnar crystal structure in preparation process, and molybdenum is similarly columnar crystal structure, belong to isoepitaxial growth type, effectively can improve the adhesion between diffusion impervious layer and the first electrode layer.
As further preferred, aforesaid polyimides solar cell, described close basalis is made of titanium, described intermediate layer is made up of titanium nitride, described close first electrode layer is made of titanium, and the thickness of described diffusion impervious layer is 1200nm, and described first electrode layer is molybdenum film layer.
As second object of the present invention, the invention provides the preparation method of aforementioned polyimides solar cell, comprise the steps:
(1) in polyimides substrate, prepare diffusion impervious layer, described preparation method is selected from any one of electroless plating, electrochemical filming method, chemical vapour deposition technique, vapour deposition method or magnetron sputtering method;
(2) the first electrode layer, absorbed layer, resilient coating, the second electrode lay, anti-reflection layer and surface electrode layer is prepared successively on the diffusion barrier.
As the 3rd object of the present invention, the invention provides polyimides solar cell diffusion impervious layer, be arranged between polyimides substrate and the first electrode layer, described diffusion impervious layer is more than three layers or three layers structures, and every one deck of described diffusion impervious layer can optionally be made by following group:
A group: aluminium, molybdenum, titanium, nickel, copper, zirconium, niobium, chromium, ruthenium, rhodium, palladium, tantalum, tungsten, iridium, osmium, platinum, gold or silver-colored, or their alloy; Or
B group: the nitride of silicon, oxide or carbide; Or
C group: titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride;
The thickness of described diffusion impervious layer is 10nm ~ 3000nm, and described first electrode layer is molybdenum film layer.
As preferably, aforesaid polyimides solar cell diffusion impervious layer, described diffusion impervious layer is three-decker, comprises near basalis, intermediate layer and near the first electrode layer; Described intermediate layer is made up of any one of titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride; Described close basalis is made up of titanium, titanium nitride or tantalum nitride; Described close first electrode layer is made up of titanium, chromium or titanium nitride.
As preferred further, aforesaid polyimides solar cell diffusion impervious layer, described close basalis is made of titanium, and described intermediate layer is made up of titanium nitride, and described close first electrode layer is made of titanium, and the thickness of described diffusion impervious layer is 1200nm.
Aforementioned polyimides solar cell diffusion impervious layer, its preparation method can be selected from any one of electroless plating, electrochemical filming method, chemical vapour deposition technique, vapour deposition method or magnetron sputtering method.
Aforesaid polyimides solar cell and polyimides solar cell diffusion impervious layer, the first electrode layer wherein, is preferably molybdenum film layer.The preparation method of the first electrode layer is selected from any one in vapour deposition method, magnetron sputtering method.The thickness of the first electrode layer is 500nm ~ 3000nm.
Aforesaid polyimides solar cell and polyimides solar cell diffusion impervious layer, absorbed layer wherein can be selected from any one of CIGS thin-film, copper-zinc-tin-sulfur film, copper-indium-sulfur film, Cadimium telluride thin film, dye-sensitized solar battery film and organic solar batteries film.The preparation method of absorbed layer can be selected from any one of electrochemical deposition method, nano-crystalline granule cladding process, vapour deposition method or magnetron sputtering method.
Aforesaid polyimides solar cell and polyimides solar cell diffusion impervious layer, resilient coating is selected from any one of zinc sulphide or cadmium sulfide.The preparation method of resilient coating is selected from any one of solwution method, chemical bath method or magnetron sputtering method.
Aforesaid polyimides solar cell and polyimides solar cell diffusion impervious layer, the second electrode lay material is selected from that tin oxide mixes indium, tin oxide mixes fluorine, doped zinc oxide aluminium, zinc oxide boron-doping or doped zinc oxide gallium any one.The preparation method of the second electrode lay is selected from any one in magnetron sputtering method, reactive sputtering, electron-beam vapor deposition method.
Aforesaid polyimides solar cell and polyimides solar cell diffusion impervious layer, anti-reflection layer material is selected from any one of magnesium fluoride, titanium dioxide, silicon nitride, silicon dioxide, alundum (Al2O3), magnesium oxide or ceria.Anti-reflection layer preparation method is selected from as any one in evaporation, sputtering method or chemical method.
Aforesaid polyimides solar cell and polyimides solar cell diffusion impervious layer, surface electrode layer material is selected from nickel, aluminium, silver etc.The preparation method of surface electrode layer is generally evaporation.
Compared with prior art, the invention has the beneficial effects as follows:
Polyimides solar cell of the present invention and diffusion impervious layer, by the screening structure of diffusion impervious layer and the constituent of each structure, the diffusion impervious layer obtained effectively can stop that the impurity element of polyimides enters absorbed layer, improve battery performance, meanwhile, the adhesion of diffusion impervious layer and polyimides, the first electrode layer can significantly be increased.
Accompanying drawing explanation
Fig. 1 is the structural representation of polyimides solar cell of the present invention;
Fig. 2 is the photo after the obtained solar battery thin film selenizing of embodiment 1;
Fig. 3 is the EDS test result figure of the diffusion impervious layer of the solar cell that embodiment 1 obtains.
In Fig. 1,1-substrate, 2-diffusion impervious layer, 201-near basalis, 202-intermediate layer, 203-near the first electrode layer, 3-first electrode layer, 4-absorbed layer, 5-resilient coating, 6-the second electrode lay, 7-anti-reflection layer, 8-surface electrode layer.
Embodiment
Below in conjunction with embodiment, foregoing invention content of the present invention is described in further detail.
But this should be interpreted as that the scope of the above-mentioned theme of the present invention is only limitted to following embodiment.Without departing from the idea case in the present invention described above, according to ordinary skill knowledge and customary means, make various replacement and change, all should comprise within the scope of the invention.
Embodiment 1 the present embodiment is about polyimides solar cell, diffusion impervious layer and preparation method.
Polyimides solar cell, structure is: substrate 1 is polyimides; Diffusion impervious layer 2 is three-decker, and thickness is 1200nm, and be wherein titanium near basalis 201, intermediate layer 202 is titanium nitride, is titanium near the first electrode layer 203; First electrode layer 3 is molybdenum; Absorbed layer 4 is CIGS thin-film; Resilient coating 5 is cadmium sulfide; The second electrode lay 6 is doped zinc oxide aluminium; Anti-reflection layer 7 is magnesium fluoride; Surface electrode layer 8 is nickel/aluminium/nickel.
Preparation method:
(1) process of polyimides substrate 1: polyimide foil substrate surface is very smooth, surface roughness is very little, therefore without the need to carrying out surface finish process, needs before use to do twice surface degreasing process.One-time surface deoiling method is ultrasonic cleaning in the detergent solution of 60 DEG C, ultrasonic cleaning time 20min.The method of secondary oil removing is in the sodium hydroxide solution of 30% concentration, ultrasonic cleaning 30min at heating-up temperature 60 DEG C.
(2) preparation of diffusion impervious layer 2:
The close basalis 201 of diffusion impervious layer 2 is titanium: magnetron sputtering method, and in the argon gas of air pressure 4mtorr, adopt the power sputtered titanium target of 240W to prepare, thickness is about 300nm.
The intermediate layer 202 of diffusion impervious layer 2 is titanium nitride, adopts magnetron sputtering method, is the argon gas of 4mtorr with the mist of nitrogen at air pressure, and power is sputtered titanium target acquisition under 210W condition, and thickness is about 600nm.
Close first electrode layer 203 of diffusion impervious layer 2 is titanium, and adopting magnetron sputtering method, is under the argon gas of 4mtorr at air pressure, and power is that under 240W condition, sputtered titanium target obtains, and thickness is about 300nm.
(3) first electrode layers 3 are molybdenum: magnetron sputtering method, and air pressure is the argon gas of 4mtorr, and sputtering power is 210W, and sputtering target material is molybdenum target, and thickness is about 1000nm.
(4) absorbed layer 4 is CIGS thin-film, and adopt magnetron sputtering method, air pressure is the argon gas of 4mtorr, and sputtering power is 120W, and target is CIGS target material, obtains the prefabricated membrane that thickness is about 800nm.After film preparation, in quick selenizing stove, the heating mode that employing is rapidly heated is to absorbed layer film at the temperature of 600 DEG C, and selenization 30nm, obtains CIGS thin-film.
(5) resilient coating 5 is cadmium sulfide: chemical bath legal system is standby, and bath temperature is 80 DEG C, and film thickness is about 60nm.
(6) the second electrode lay 6 is doped zinc oxide aluminium: adopt magnetron sputtering, target is doped zinc oxide aluminium, and sputtering power is 180W, and sample stage temperature is 200 DEG C, and air pressure is 4mtorr argon gas, and thickness is about 500nm.
(7) anti-reflection layer 7 is magnesium fluoride: adopt resistance-type evaporation, temperature is about 1300 DEG C, and thickness is about 80nm.
(8) surface electrode layer 8 is nickel/aluminium/nickel: nickel film adopts electron-beam vapor deposition method, the thickness of ground floor nickel film is about 200nm, prevent the diffusion of aluminium, the thickness of second layer nickel film is about 200nm, prevent the oxidation of aluminium, aluminum interlayer film adopts the method for resistance-type evaporation, and thickness is about 3000nm.
Obtained polyimide foil solar cell, after high temperature selenizing as shown in Figure 2, film flawless and without obscission.Obtained solar cell device, after tested, even if through bending, film also can not come off.
Obtained not polyimides solar cell, as shown in Figure 3, EDS test data is as shown in table 1 for EDS test result:
Table 1.EDS test data
From Fig. 3 and table 1 data, the blocking effect of the diffusion impervious layer 2 of obtained polyimides solar cell is fine, diffuses to absorbed layer without the impurity element in any polyimides substrate.
Embodiment 2 the present embodiment is about polyimides solar cell and diffusion impervious layer
Polyimides solar cell, structure is: substrate 1 is polyimides; Diffusion impervious layer 2 is three-decker, and thickness is 1200nm, and be wherein titanium near basalis 201, intermediate layer 202 is carborundum, is chromium near the first electrode layer 203; First electrode layer 3 is molybdenum; Absorbed layer 4 is CIGS thin-film; Resilient coating 5 is cadmium sulfide; The second electrode lay 6 is doped zinc oxide aluminium; Anti-reflection layer 7 is magnesium fluoride; Surface electrode layer 8 is nickel/aluminium/nickel.
Embodiment 3 the present embodiment is polyimides solar cell and diffusion impervious layer
Polyimides solar battery structure: substrate 1 is polyimides; Diffusion impervious layer 2 is three-decker, and the close basalis 201 of diffusion impervious layer 2 is titanium nitride, and intermediate layer 202 is tantalum nitride, and be titanium nitride near the first electrode layer 203, diffusion impervious layer 2 thickness is 3000nm; First electrode layer 3 is molybdenum; Absorbed layer 4 is CIGS thin-film; Resilient coating 5 is cadmium sulfide; The second electrode lay 6 is doped zinc oxide aluminium; Anti-reflection layer 7 is magnesium fluoride; Surface electrode layer 8 is nickel/aluminium/nickel.
Embodiment 4 the present embodiment is polyimides solar cell and diffusion impervious layer
Polyimides solar battery structure: substrate 1 is polyimides; Diffusion impervious layer 2 is three-decker, and the close basalis 201 of diffusion impervious layer 2 is titanium, and intermediate layer 202 is titanium nitride, and be chromium near the first electrode layer 203, diffusion impervious layer 2 thickness is 2000nm; First electrode layer 3 is molybdenum; Absorbed layer 4 is CIGS thin-film; Resilient coating 5 is cadmium sulfide; The second electrode lay 6 is doped zinc oxide aluminium; Anti-reflection layer 7 is magnesium fluoride; Surface electrode layer 8 is nickel/aluminium/nickel.
Embodiment 5 the present embodiment is polyimides solar cell and diffusion impervious layer
Polyimides solar battery structure: substrate 1 is polyimides; Diffusion impervious layer 2 is four-layer structure, and the close basalis 201 of diffusion impervious layer 2 is two-layer, is respectively titanium layer and titanium nitride, and intermediate layer 202 is tantalum nitride, and be titanium near the first electrode layer 203, diffusion impervious layer 2 thickness is 3000nm; First electrode layer 3 is molybdenum; Absorbed layer 4 is CIGS thin-film; Resilient coating 5 is cadmium sulfide; The second electrode lay 6 is doped zinc oxide aluminium; Anti-reflection layer 7 is magnesium fluoride; Surface electrode layer 8 is nickel/aluminium/nickel.
Claims (10)
1. polyimides solar cell, the diffusion impervious layer comprising polyimides substrate and formed successively in polyimides substrate, the first electrode layer, absorbed layer, resilient coating, the second electrode lay, anti-reflection layer and surface electrode layer, it is characterized in that, described diffusion impervious layer is more than three layers or three layers structures, and every one deck of described diffusion impervious layer is optionally made by following group:
A group: aluminium, molybdenum, titanium, nickel, copper, zirconium, niobium, chromium, ruthenium, rhodium, palladium, tantalum, tungsten, iridium, osmium, platinum, gold or silver-colored, or their alloy; Or
B group: the nitride of silicon, oxide or carbide; Or
C group: titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride;
The thickness of described diffusion impervious layer is 10nm ~ 3000nm.
2. polyimides solar cell according to claim 1, is characterized in that, described diffusion impervious layer is three-decker, comprises near basalis, intermediate layer and close first electrode layer.
3. polyimides solar cell according to claim 2, is characterized in that, the intermediate layer of described diffusion impervious layer is made up of any one of titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride.
4. polyimides solar cell according to claim 2, is characterized in that, the close basalis of described diffusion impervious layer is made up of titanium, titanium nitride or tantalum nitride.
5. polyimides solar cell according to claim 2, is characterized in that, being made up of titanium, chromium or titanium nitride near the first electrode layer of described diffusion impervious layer.
6. polyimides solar cell according to claim 2, is characterized in that, described close basalis is made of titanium, described intermediate layer is made up of titanium nitride, described close first electrode layer is made of titanium, and the thickness of described diffusion impervious layer is 1200nm, and described first electrode layer is molybdenum film layer.
7. the polyimides solar cell described in any one of claim 1 ~ 6, is characterized in that, comprise the steps:
(1) in polyimides substrate, prepare diffusion impervious layer, described preparation method is selected from any one of electroless plating, electrochemical filming method, chemical vapour deposition technique, vapour deposition method or magnetron sputtering method;
(2) the first electrode layer, absorbed layer, resilient coating, the second electrode lay, anti-reflection layer and surface electrode layer is prepared successively on the diffusion barrier.
8. polyimides solar cell diffusion impervious layer, is arranged between polyimides substrate and the first electrode layer, it is characterized in that, described diffusion impervious layer is more than three layers or three layers structures, and every one deck of described diffusion impervious layer can optionally be made by following group:
A group: aluminium, molybdenum, titanium, nickel, copper, zirconium, niobium, chromium, ruthenium, rhodium, palladium, tantalum, tungsten, iridium, osmium, platinum, gold or silver-colored, or their alloy; Or
B group: the nitride of silicon, oxide or carbide; Or
C group: titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride;
The thickness of described diffusion impervious layer is 10nm ~ 3000nm, and described first electrode layer is molybdenum film layer.
9. polyimides solar cell diffusion impervious layer according to claim 8, it is characterized in that, described diffusion impervious layer is three-decker, comprises near basalis, intermediate layer and close first electrode layer; Described intermediate layer is made up of any one of titanium nitride, tantalum nitride, tungsten nitride or zirconium nitride; Described close basalis is made up of titanium, titanium nitride or tantalum nitride; Described close first electrode layer is made up of titanium, chromium or titanium nitride.
10. polyimides solar cell diffusion impervious layer according to claim 9, it is characterized in that, described close basalis is made of titanium, and described intermediate layer is made up of titanium nitride, described close first electrode layer is made of titanium, and the thickness of described diffusion impervious layer is 1200nm.
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| CN109192791A (en) * | 2018-08-31 | 2019-01-11 | 北京铂阳顶荣光伏科技有限公司 | Solar battery and its barrier layer |
| CN114041212A (en) * | 2019-07-05 | 2022-02-11 | 东友精细化工有限公司 | Transparent electrode structure and electric device comprising same |
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| US20200161483A1 (en) * | 2017-06-23 | 2020-05-21 | King Abdullah University Of Science And Technology | Hole blocking layers for electronic devices and method of producing an electronic device having a hole-blocking layer |
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| CN101093863A (en) * | 2007-06-12 | 2007-12-26 | 南开大学 | Thin film solar cell of using ZnO as electrical isolation layer and impurity barrier layer, and preparation method |
| CN103456802B (en) * | 2013-09-04 | 2015-09-09 | 南开大学 | A kind of back electrode for polyimide substrate copper-indium-galliun-selenium film solar cell |
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| CN109192791A (en) * | 2018-08-31 | 2019-01-11 | 北京铂阳顶荣光伏科技有限公司 | Solar battery and its barrier layer |
| CN114041212A (en) * | 2019-07-05 | 2022-02-11 | 东友精细化工有限公司 | Transparent electrode structure and electric device comprising same |
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