CN105244388A - Texturing technology for solar cell - Google Patents
Texturing technology for solar cell Download PDFInfo
- Publication number
- CN105244388A CN105244388A CN201510616856.6A CN201510616856A CN105244388A CN 105244388 A CN105244388 A CN 105244388A CN 201510616856 A CN201510616856 A CN 201510616856A CN 105244388 A CN105244388 A CN 105244388A
- Authority
- CN
- China
- Prior art keywords
- parts
- substrate
- surface etching
- solar cell
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005516 engineering process Methods 0.000 title abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 26
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- PXOYOCNNSUAQNS-AGNJHWRGSA-N alantolactone Chemical compound C1[C@H]2OC(=O)C(=C)[C@H]2C=C2[C@@H](C)CCC[C@@]21C PXOYOCNNSUAQNS-AGNJHWRGSA-N 0.000 claims abstract description 16
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 14
- PXOYOCNNSUAQNS-UHFFFAOYSA-N alantolactone Natural products C1C2OC(=O)C(=C)C2C=C2C(C)CCCC21C PXOYOCNNSUAQNS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011780 sodium chloride Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 abstract description 3
- 238000003754 machining Methods 0.000 abstract description 2
- OSWPMRLSEDHDFF-UHFFFAOYSA-N methyl salicylate Chemical compound COC(=O)C1=CC=CC=C1O OSWPMRLSEDHDFF-UHFFFAOYSA-N 0.000 abstract 2
- 239000004205 dimethyl polysiloxane Substances 0.000 abstract 1
- 229960001047 methyl salicylate Drugs 0.000 abstract 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 abstract 1
- -1 polydimethylsiloxane Polymers 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 241001647745 Banksia Species 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to the technical field of machining, in particular to a texturing technology for a solar cell. The texturing technology comprises the following steps: firstly, placing a battery substrate into a plasma processing chamber; spraying a trigger agent on the substrate before surface etching; and finally, carrying out surface etching and side wall protection on the substrate to form a textured surface. The trigger agent is prepared from the following raw materials: 5 parts of polydimethylsiloxane, 5 parts of ethyl acetate, 0.5 part of alantolactone, 5 parts of methyl salicylate, 5 parts of sodium chloride and 79.5 parts of ice. According to the texturing technology for the solar cell provided by the invention, an operation technology is simple; the key point is that firstly spraying the trigger agent on the substrate before surface etching and then carrying out surface etching and side wall protection on the substrate to form the textured surface; and meanwhile, through a reasonable design of the formula of the trigger agent, the subsequent surface etching and side wall protection steps are finished relatively well.
Description
Technical field
The present invention relates to Machining Technology field, specifically relate to a kind of process for etching of solar cell.
Background technology
In the course of processing of existing solar cell, first cell substrate is positioned in plasma process chamber, then to the surface etching of substrate and sidewall protection to form matte.But the uniformity consistency that this processing method mainly exists the matte of the pyramid figure of formation is poor.And before surface etching and sidewall protection, substrate is sprayed and triggers the uniformity consistency that agent just can significantly improve matte.
Summary of the invention
For the technical problem existed in prior art, the object of the present invention is to provide a kind of process for etching of solar cell, for achieving the above object, present invention employs following technical scheme:
A process for etching for solar cell, is first positioned in plasma process chamber by cell substrate, then on surface etching forward direction substrate, has sprayed triggering agent, finally to the surface etching of substrate and sidewall protection to form matte.Described triggering agent is made up of 5 parts of dimethyl silicone polymers, 5 parts of ethyl acetate, 0.5 part of alantolactone, 5 parts of gaultherolins, 5 parts of sodium chloride and 79.5 parts of water.
Preferably, the preparation method of described triggering agent is: in container, first add 5 parts of dimethyl silicone polymers, 5 parts of ethyl acetate and 50 parts of water, stirs 10 minutes; Then slowly add 0.5 part of alantolactone and 5 parts of gaultherolins, limit edged stirs, and stirs 10 minutes after interpolation; Last property adds 5 parts of sodium chloride and 29.5 parts of water.
Beneficial effect of the present invention shows:
1), the triggering agent that uses in process for etching, its formula Design is reasonable, particularly with the addition of a small amount of alantolactone (extract component of the plant soil banksia rose), can significantly improve the treatment effeciency triggering agent.By trigger agent with the use of, make the matte uniformity of cell substrate after surface etching and sidewall protection.
2), trigger the preparation method of agent, by the method for progressively adding, the solubility property between each material can not only be improved, the possibility of particle agglomeration can also be avoided, the pretreatment potentiality of triggering agent is promoted significantly.
3), the process for etching of solar cell; operating procedure is succinct; focus on first spraying on surface etching forward direction substrate triggering agent; then to the surface etching of substrate and sidewall protection with the step forming matte; simultaneously; trigger the formula of agent by appropriate design, thus follow-up surface etching and sidewall protection step are completed better.
Embodiment
Below with reference to embodiment, the present invention is described in detail.But; embodiment content is only citing made for the present invention and explanation; affiliated those skilled in the art make various amendment to described specific embodiment or supplement or adopt similar mode to substitute; only otherwise depart from the design of invention or surmount this scope as defined in the claims, protection scope of the present invention all should be belonged to.
One, the composition of agent is triggered
5 parts, dimethyl silicone polymer 5 parts of ethyl acetate
Alantolactone 0.5 part of gaultherolin 5 parts
79.5 parts, sodium chloride 5 parts of water.
Two, the preparation method triggering agent is:
First in container, add 5 parts of dimethyl silicone polymers, 5 parts of ethyl acetate and 50 parts of water, stir 10 minutes; Then slowly add 0.5 part of alantolactone and 5 parts of gaultherolins, limit edged stirs, and stirs 10 minutes after interpolation; Last property adds 5 parts of sodium chloride and 29.5 parts of water.
Three, the process for etching of solar cell, step is as follows:
First cell substrate is positioned in plasma process chamber, then on surface etching forward direction substrate, has sprayed triggering agent, finally to the surface etching of substrate and sidewall protection to form matte (according to prior art enforcement).
Claims (2)
1. the process for etching of a solar cell; first cell substrate is positioned in plasma process chamber; then to the surface etching of substrate and sidewall protection to form matte; it is characterized in that; surface etching forward direction substrate has sprayed triggering agent, and described triggering agent is made up of 5 parts of dimethyl silicone polymers, 5 parts of ethyl acetate, 0.5 part of alantolactone, 5 parts of gaultherolins, 5 parts of sodium chloride and 79.5 parts of water.
2. the process for etching of solar cell as claimed in claim 1, is characterized in that the preparation method of described triggering agent is: in container, first add 5 parts of dimethyl silicone polymers, 5 parts of ethyl acetate and 50 parts of water, stirs 10 minutes; Then slowly add 0.5 part of alantolactone and 5 parts of gaultherolins, limit edged stirs, and stirs 10 minutes after interpolation; Last property adds 5 parts of sodium chloride and 29.5 parts of water.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510616856.6A CN105244388A (en) | 2015-09-25 | 2015-09-25 | Texturing technology for solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510616856.6A CN105244388A (en) | 2015-09-25 | 2015-09-25 | Texturing technology for solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105244388A true CN105244388A (en) | 2016-01-13 |
Family
ID=55041955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510616856.6A Pending CN105244388A (en) | 2015-09-25 | 2015-09-25 | Texturing technology for solar cell |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105244388A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101308219A (en) * | 2008-06-27 | 2008-11-19 | 吉林大学 | Method for constructing anti-reflection microstructure using single layer nanometer particle as etching blocking layer |
CN101800264A (en) * | 2010-02-20 | 2010-08-11 | 山东力诺太阳能电力股份有限公司 | Process for texturing crystalline silicon solar cell by dry etching |
CN102544289A (en) * | 2012-03-06 | 2012-07-04 | 中国科学院半导体研究所 | Method for roughening surface of epitaxial structure of gallium nitride-based light emitting diode |
CN103112816A (en) * | 2013-01-30 | 2013-05-22 | 中国科学院大学 | Method for preparing pyramid array on monocrystalline silicon substrate |
CN104393102A (en) * | 2014-10-16 | 2015-03-04 | 上海交通大学 | Preparation method of silicon surface micro/nano-meter anti-reflection structure, and application |
-
2015
- 2015-09-25 CN CN201510616856.6A patent/CN105244388A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101308219A (en) * | 2008-06-27 | 2008-11-19 | 吉林大学 | Method for constructing anti-reflection microstructure using single layer nanometer particle as etching blocking layer |
CN101800264A (en) * | 2010-02-20 | 2010-08-11 | 山东力诺太阳能电力股份有限公司 | Process for texturing crystalline silicon solar cell by dry etching |
CN102544289A (en) * | 2012-03-06 | 2012-07-04 | 中国科学院半导体研究所 | Method for roughening surface of epitaxial structure of gallium nitride-based light emitting diode |
CN103112816A (en) * | 2013-01-30 | 2013-05-22 | 中国科学院大学 | Method for preparing pyramid array on monocrystalline silicon substrate |
CN104393102A (en) * | 2014-10-16 | 2015-03-04 | 上海交通大学 | Preparation method of silicon surface micro/nano-meter anti-reflection structure, and application |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160113 |
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WD01 | Invention patent application deemed withdrawn after publication |