CN105244266B - A kind of Ohmic contact forming method of SiC wafers - Google Patents
A kind of Ohmic contact forming method of SiC wafers Download PDFInfo
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- CN105244266B CN105244266B CN201510703099.6A CN201510703099A CN105244266B CN 105244266 B CN105244266 B CN 105244266B CN 201510703099 A CN201510703099 A CN 201510703099A CN 105244266 B CN105244266 B CN 105244266B
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- 235000012431 wafers Nutrition 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 238000000137 annealing Methods 0.000 claims abstract description 40
- 230000008021 deposition Effects 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052799 carbon Inorganic materials 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 18
- 239000007789 gas Substances 0.000 abstract description 16
- 239000000126 substance Substances 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000012360 testing method Methods 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 238000001755 magnetron sputter deposition Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 238000005262 decarbonization Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention belongs to SiC fields, more particularly to a kind of Ohmic contact forming method of SiC wafers.Method provided by the invention comprises the following steps：A), SiC crystal column surfaces deposited metal layer, obtaining surface deposition has the SiC wafers of metal level；B), the SiC wafers that the surface deposition has metal level are made annealing treatment, and obtain being formed the SiC wafers of Ohmic contact；Described make annealing treatment includes several temperature rise periods, several holding stages and several temperature-fall periods, and at least one stage in the annealing is in CO2Carried out in atmosphere.Method provided by the invention has been passed through CO during the SiC wafers that deposition has metal level are annealed2Gas, CO2Gas and the carbon simple substance reaction generation CO gases generated in annealing process, so as to realize effective removal of carbon simple substance in annealing process, therefore without additionally increasing decarbonizing technology, enormously simplify the handling process of SiC wafer ohmic contact crafts.
Description
Technical field
The invention belongs to SiC fields, more particularly to a kind of Ohmic contact forming method of SiC wafers.
Background technology
As third generation semi-conducting material, SiC material has many unique advantages, such as：Breakdown electric field is high, electric conduction
Hinder that low, thermal conductivity is high and saturated electrons migration rate height etc..Therefore, SiC device has higher overvoltage capacity, relatively low conducting
Resistance, preferable heat conductivility.Due to SiC device have many advantages, such as it is above-mentioned so that it is increasingly valued by people, into
For a kind of boundless semiconductor devices of application prospect.
Preparing for SiC device is sufficiently complex, including the growth of SiC films, ion doping, plasma etching and formation ohm
All multiple operation such as contact.Wherein, formed Ohmic contact be to prepare one of mostly important process of SiC device, Ohmic contact it is good
The bad performance for directly affecting SiC device.
So-called formation Ohmic contact, actually refer to form a kind of special contact condition between metal and semiconductor,
Under this contact condition, the resistance value of contact surface is much smaller than the resistance of semiconductor in itself.Because metal and SiC crystal column surfaces are straight
Contact can not form Ohmic contact, therefore be required to be made annealing treatment after metal contacts with SiC crystal column surfaces, make contact
Metal silicide layer is formed between metal and SiC wafers.The metal silicide layer can effectively reduce contacting metal and SiC wafers
Between potential barrier, so as to realize the Ohmic contact of contacting metal and SiC crystal column surfaces.
In the device obtained after being contacted to SiC wafers with metal carries out annealing process, contacting metal reacts with SiC wafers
Carbon simple substance can be also generated while generating metal silicide, has one can be separated out to contacting metal surface in these carbon simple substances, from
And remain on contacting metal surface, form thin layer carbon.If these thin layer carbon are not efficiently removed, ohm will be directly affected and connect
Effect is touched, causes ohmic contact resistance increase, ohmic contact characteristic to deteriorate, so as to have a strong impact on the forward characteristic of device.
In order to solve the above problems, the method used at present is after completing to anneal, and the work of carbon is removed on one step surface of increase
Skill step.Wherein, the carbon method of removing more generally used is oxygen plasma decarbonization, and oxygen plasma decarbonization is to pass through electricity
Oxygen is ionized into oxygen plasma by magnetic field, then oxygen plasma is in contact with the SiC device after annealing, so as to by SiC device
The thin layer oxidation of coal on surface realizes the removal of thin layer carbon into gas.
Although oxygen plasma decarbonization can effectively remove the thin layer carbon on SiC device surface, this method not only work
Skill is complicated, can also cause the oxidation of contacting metal in SiC device so that also needs to increase PROCESS FOR TREATMENT quilt after decarbonizing technology
The contacting metal of oxidation, cause the further complication of whole SiC wafers ohmic contact craft.In addition, if thin layer carbon and by
The metal ohmic contact of oxidation removes not complete enough, it will device performance is caused to have a strong impact on.
The content of the invention
In view of this, it is an object of the invention to provide a kind of Ohmic contact forming method of SiC wafers, the present invention to provide
Method effective removal of carbon is realized in annealing process, without extra increase decarbonizing technology, enormously simplify SiC wafers Europe
The handling process of nurse contact process.
The invention provides a kind of Ohmic contact forming method of SiC wafers, comprise the following steps：
A), SiC crystal column surfaces deposited metal layer, obtaining surface deposition has the SiC wafers of metal level；
B), the SiC wafers that the surface deposition has metal level are made annealing treatment, and the SiC for obtaining being formed Ohmic contact is brilliant
Circle；
The annealing includes several temperature rise periods, several holding stages and several temperature-fall periods, described to move back
At least one stage in fire processing is in CO2Carried out in atmosphere.
Preferably, the annealing includes temperature rise period, the first holding stage, the first temperature-fall period, the second guarantor successively
Thermophase and the second temperature-fall period；Second holding stage is in CO2Carried out in atmosphere；The temperature of second holding stage is
150~350 DEG C.
Preferably, the time of second holding stage is 2~20min.
Preferably, the heating rate of the temperature rise period is 10~40 DEG C/s.
Preferably, the temperature of first holding stage is 800~1200 DEG C.
Preferably, the time of first holding stage is 1~10min.
Preferably, the cooling method of first temperature-fall period and the second temperature-fall period is Temperature fall.
Preferably, second temperature-fall period is in inert gas or N2Carried out under atmosphere.
Preferably, in step a), the mode of the deposited metal layer is magnetron sputtering.
Preferably, it is 50~500nm that the surface deposition, which has the metal layer thickness of the SiC wafers of metal level,.
Compared with prior art, the invention provides a kind of Ohmic contact forming method of SiC wafers.It is provided by the invention
Method comprises the following steps：A), SiC crystal column surfaces deposited metal layer, obtaining surface deposition has the SiC wafers of metal level；B), institute
The SiC wafers that stating surface deposition has metal level are made annealing treatment, and obtain being formed the SiC wafers of Ohmic contact；At the annealing
Managing includes several temperature rise periods, several holding stages and several temperature-fall periods, at least one in the annealing
Stage is in CO2Carried out in atmosphere.Method provided by the invention is led to during the SiC wafers that deposition has metal level are annealed
CO is entered2Gas, CO2Gas and the carbon simple substance reaction generation CO gases generated in annealing process, so as to be realized in annealing process
Effective removal of carbon simple substance, therefore without additionally increase decarbonizing technology, enormously simplify the place of SiC wafer ohmic contact crafts
Manage flow.Test result indicates that compared to not adding CO in annealing process2The situation of gas, side provided by the present invention
The forward characteristic for the semiconductor devices that the obtained SiC wafers for forming Ohmic contact of method are assembled into greatly promotes, so as to prove to adopt
The method carried with the present invention can effectively remove the carbon residue on SiC wafers contacting metal surface in Ohmic contact forming process.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 be SBD device that the SiC wafers of the Ohmic contact provided by the invention as made from embodiment 1 are assembled into just
To characteristic test curve map；
Fig. 2 be SBD device that the SiC wafers of the Ohmic contact provided by the invention as made from embodiment 2 are assembled into just
To characteristic test curve map；
Fig. 3 be SBD device that the SiC wafers of the Ohmic contact provided by the invention as made from embodiment 3 are assembled into just
To characteristic test curve map；
Fig. 4 is the forward direction for the SBD device that the SiC wafers of the Ohmic contact provided by the invention as made from comparative example are assembled into
Characteristic test curve map.
Embodiment
The technical scheme in the embodiment of the present invention is clearly and completely described below, it is clear that described embodiment
Only part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the common skill in this area
The every other embodiment that art personnel are obtained under the premise of creative work is not made, belong to the model that the present invention protects
Enclose.
The invention provides a kind of Ohmic contact forming method of SiC wafers, comprise the following steps：
A), SiC crystal column surfaces deposited metal layer, obtaining surface deposition has the SiC wafers of metal level；
B), the SiC wafers that the surface deposition has metal level are made annealing treatment, and the SiC for obtaining being formed Ohmic contact is brilliant
Circle；
The annealing includes several temperature rise periods, several holding stages and several temperature-fall periods, described to move back
At least one stage in fire processing is in CO2Carried out in atmosphere.
In the present invention, first in SiC crystal column surface deposited metal layers.Wherein, source of the present invention to the SiC wafers
It is not particularly limited, commercially available SiC wafers can be used, can also be prepared into according to method well known to those skilled in the art
Arrive.In the present invention, to being not particularly limited in the mode of the SiC crystal column surfaces deposited metal layer, preferably magnetron sputtering.
The target of the magnetron sputtering is preferably Ni or Ti；The sputtering pressure of the magnetron sputtering is preferably 0.1~5Pa, more preferably
0.2~2Pa, most preferably 0.5~1Pa.After the SiC crystal column surfaces complete the deposition of metal level, obtaining surface deposition has gold
Belong to the SiC wafers of layer.In the present invention, it is preferably Ni layers or Ti that the surface deposition, which has the metal level of the SiC wafers of metal level,
Layer；It is preferably 50~500nm that the surface deposition, which has the metal layer thickness of the SiC wafers of metal level, more preferably 100~
400nm, most preferably 200~300nm.
Obtain surface deposition have the SiC wafers of metal level after, to the surface deposition have metal level SiC wafers move back
Fire processing.Wherein, the annealing includes several temperature rise periods, several holding stages and several temperature-fall periods, institute
At least one stage in annealing is stated in CO2Carried out in atmosphere.In one embodiment provided by the invention, the annealing
Processing includes temperature rise period, the first holding stage, the first temperature-fall period, the second holding stage and the second temperature-fall period successively, its
In, the temperature of second holding stage is 150~350 DEG C, and second holding stage is in CO2Carried out in atmosphere.In this hair
In bright, the second holding stage is in CO2The reason for being carried out in atmosphere is that the temperature of the second holding stage is relatively adapted to SiC wafers moving back
The carbon simple substance and CO generated during fire2Reacted, so as to realize the efficient removal of carbon simple substance.
Above-mentioned annealing provided by the invention successively include the temperature rise period, the first holding stage, the first temperature-fall period,
In the embodiment of second holding stage and the second temperature-fall period, the heating rate of the temperature rise period is preferably 10~40 DEG C/s,
More preferably 20~30 DEG C/s；The temperature of first holding stage is preferably 800~1200 DEG C, more preferably 950~1050
℃；The time of first holding stage is preferably 1~10min, more preferably 2~5min；The side of first temperature-fall period
Formula is preferably Temperature fall；The temperature of second holding stage is preferably 200~300 DEG C；Second holding stage when
Between be preferably 2~20min, more preferably 5~10min；The mode of second temperature-fall period is preferably Temperature fall.In this hair
In bright, second temperature-fall period is preferably in inert gas or N2Carried out under atmosphere.In the present invention, the second temperature-fall period is lazy
Property gas or N2The purpose carried out under atmosphere is in order to avoid CO2CO with the C reaction generations of SiC crystal column surfaces is in cryogenic conditions
The lower metal with SiC crystal column surfaces deposition is reacted, and so as to generate metal carbides, influences product property.
After the SiC wafers that the surface deposition has metal level make annealing treatment, the SiC for obtaining being formed Ohmic contact is brilliant
Circle.
Method provided by the invention carries out being passed through CO in annealing process in the SiC wafers that deposition has metal level2Gas, CO2
Gas and the carbon simple substance reaction generation CO gases generated in annealing process, so as to realize the effective of carbon simple substance in annealing process
Remove, therefore without additionally increasing decarbonizing technology, enormously simplify the handling process of SiC wafer ohmic contact crafts.
Test result indicates that CO is not added compared to annealing process2The situation of atmosphere, method provided by the present invention
The forward characteristic for the semiconductor devices that the SiC wafers of obtained formation Ohmic contact are assembled into greatly promotes, so as to prove to use
The method that the present invention carries can effectively remove the carbon residue on SiC wafers contacting metal surface in Ohmic contact forming process.
For the sake of becoming apparent from, it is described in detail below by following examples.
Embodiment 1
Prepare the SiC wafers for forming Ohmic contact
1) metal ohmic contact deposits：Connect using magnetron sputtering method in SiC wafers (4 cun × 400 μm) surface deposition ohm
Metal is touched, target Ni, sputtering pressure is arranged to 0.5~1Pa, and after magnetron sputtering terminates, obtaining surface deposition has 200~
The SiC wafers of 220nmNi layers.
2) metal alloy annealing：The SiC wafers that surface deposition there are Ni layers are placed in high temperature rapid thermal annealing stove；It is passed through
Argon gas, when oxygen content monitoring system display device inside cavity oxygen content is less than 20~30ppm, begin to warm up, with 20 DEG C/s
Heating rate temperature is risen to 950~975 DEG C, the temperature maintain 5min；Temperature fall, when temperature is down to 200~300 DEG C
Between when, CO is passed through into annealing furnace2Gas makes SiC wafers be completely disposed at CO2In atmosphere, 5min is maintained；Hold time end
Afterwards, N is utilized2Environment in equipment is purified, until there is no CO in equipment2Gas CO is generated with reaction, is naturally cooling to
Less than 100 DEG C are come out of the stove, and obtain being formed the SiC wafers of Ohmic contact.
Embodiment 2
Prepare the SiC wafers for forming Ohmic contact
1) metal ohmic contact deposits：Connect using magnetron sputtering method in SiC wafers (4 cun × 400 μm) surface deposition ohm
Metal is touched, target Ni, sputtering pressure is arranged to 0.5~1Pa, and after magnetron sputtering terminates, obtaining surface deposition has 230~
The SiC wafers of 250nmNi layers.
2) metal alloy annealing：The SiC wafers that surface deposition there are Ni layers are placed in high temperature rapid thermal annealing stove；It is passed through
Argon gas, when oxygen content monitoring system display device inside cavity oxygen content is less than 20~30ppm, begin to warm up, with 25 DEG C/s
Heating rate temperature is risen to 970~990 DEG C, the temperature maintain 3min；Temperature fall, when temperature is down to 200~300 DEG C
Between when, CO is passed through into annealing furnace2Gas makes SiC wafers be completely disposed at CO2In atmosphere, 7min is maintained；Hold time end
Afterwards, N is utilized2Environment in equipment is purified, until there is no CO in equipment2Gas CO is generated with reaction, is naturally cooling to
Less than 100 DEG C are come out of the stove, and obtain being formed the SiC wafers of Ohmic contact.
Embodiment 3
Prepare the SiC wafers for forming Ohmic contact
1) metal ohmic contact deposits：Connect using magnetron sputtering method in SiC wafers (4 cun × 400 μm) surface deposition ohm
Metal is touched, target Ni, sputtering pressure is arranged to 0.5~1Pa, and after magnetron sputtering terminates, obtaining surface deposition has 280~
The SiC wafers of 300nmNi layers.
2) metal alloy annealing：The SiC wafers that surface deposition there are Ni layers are placed in high temperature rapid thermal annealing stove；It is passed through
Argon gas, when oxygen content monitoring system display device inside cavity oxygen content is less than 20~30ppm, begin to warm up, with 30 DEG C/s
Heating rate temperature is risen to 1025~1050 DEG C, the temperature maintain 2min；Temperature fall, when temperature is down to 200~300
When between DEG C, CO is passed through into annealing furnace2Gas makes SiC wafers be completely disposed at CO2In atmosphere, 10min is maintained；Hold time knot
After beam, N is utilized2Environment in equipment is purified, until there is no CO in equipment2Gas CO, Temperature fall are generated with reaction
Come out of the stove to less than 100 DEG C, obtain being formed the SiC wafers of Ohmic contact.
Comparative example
Prepare the SiC wafers for forming Ohmic contact
1) metal ohmic contact deposits：Connect using magnetron sputtering method in SiC wafers (4 cun × 400 μm) surface deposition ohm
Metal is touched, target Ni, sputtering pressure is arranged to 0.5~1Pa, and after magnetron sputtering terminates, obtaining surface deposition has 200~
The SiC wafers of 220nmNi layers.
2) metal alloy annealing：The SiC wafers that surface deposition there are Ni layers are placed in high temperature rapid thermal annealing stove；It is passed through
Argon gas, when oxygen content monitoring system display device inside cavity oxygen content is less than 20~30ppm, begin to warm up, with 20 DEG C/s
Heating rate temperature is risen to 950~975 DEG C, the temperature maintain 5min；Temperature fall, when temperature is down to 200~300 DEG C
Between when, maintain 5min；Hold time after end, be naturally cooling to less than 100 DEG C and come out of the stove, obtain forming Ohmic contact
SiC wafers.
Embodiment 4
Performance test
The SiC wafers that Ohmic contact is formed made from embodiment 1~3 and comparative example are assembled into Schottky-barrier diode
(SBD) forward characteristic test, is carried out to SBD device, the testing standard of reference is：MIL-STD-750F:2012Method
4011.4&4016.4；Test condition is：24 DEG C of temperature, humidity 37%, 0~30A of current range, 0~3V of voltage range.Test
As a result as shown in Figure 1 to 4, Fig. 1 is that the SiC wafers of the Ohmic contact provided by the invention as made from embodiment 1 are assembled into
The forward characteristic test curve figure of SBD device；Fig. 2 is the SiC wafers of the Ohmic contact provided by the invention as made from embodiment 2
The forward characteristic test curve figure for the SBD device being assembled into；Fig. 3 is the Ohmic contact provided by the invention as made from embodiment 3
The forward characteristic test curve figure of SBD device that is assembled into of SiC wafers；Fig. 4 is provided by the invention as made from comparative example
The forward characteristic test curve figure for the SBD device that the SiC wafers of Ohmic contact are assembled into.
Made by the way that Fig. 1~Fig. 3 forward characteristic test result can be seen that compared with Fig. 4 by embodiment 1~3
The SBD device forward characteristic that the SiC wafers of the formation Ohmic contact obtained are assembled into far superior to forms Europe as made from comparative example
The SBD device that the SiC wafers of nurse contact are assembled into.So as to prove effectively remove SiC using the method that the present invention carries
The carbon residue on wafer contacting metal surface in Ohmic contact forming process.
The SBD device being assembled into the obtained SiC wafers for forming Ohmic contact of embodiment 1~3 carries out high temperature storage, temperature
Degree impact and high temperature reverse bias reliability test, result are qualified, illustrate that the SiC of formation Ohmic contact provided by the invention is brilliant
Circle has good use reliability.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of Ohmic contact forming method of SiC wafers, comprises the following steps：
A), SiC crystal column surfaces deposited metal layer, obtaining surface deposition has the SiC wafers of metal level；
B), the SiC wafers that the surface deposition has metal level are made annealing treatment, and obtain being formed the SiC wafers of Ohmic contact；
Described make annealing treatment includes several temperature rise periods, several holding stages and several temperature-fall periods, at the annealing
At least one stage in reason is in CO2Carried out in atmosphere.
2. according to the method for claim 1, it is characterised in that the annealing includes temperature rise period, the first guarantor successively
Thermophase, the first temperature-fall period, the second holding stage and the second temperature-fall period；Second holding stage is in CO2Enter in atmosphere
OK；The temperature of second holding stage is 150~350 DEG C.
3. according to the method for claim 2, it is characterised in that the time of second holding stage is 2~20min.
4. according to the method for claim 2, it is characterised in that the heating rate of the temperature rise period is 10~40 DEG C/s.
5. according to the method for claim 2, it is characterised in that the temperature of first holding stage is 800~1200 DEG C.
6. according to the method for claim 5, it is characterised in that the time of first holding stage is 1~10min.
7. according to the method for claim 2, it is characterised in that the cooling of first temperature-fall period and the second temperature-fall period
Mode is Temperature fall.
8. according to the method for claim 2, it is characterised in that second temperature-fall period is in inert gas or N2Under atmosphere
Carry out.
9. according to the method for claim 1, it is characterised in that in step a), the mode of the deposited metal layer is magnetic control
Sputtering.
10. according to the method described in any one of claim 1~9, it is characterised in that the surface deposition has the SiC of metal level
The metal layer thickness of wafer is 50~500nm.
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| US7790616B2 (en) * | 2007-08-29 | 2010-09-07 | Northrop Grumman Systems Corporation | Encapsulated silicidation for improved SiC processing and device yield |
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