CN105242469A - 一种分担电容器、包括该分担电容器的像素及阵列基板 - Google Patents

一种分担电容器、包括该分担电容器的像素及阵列基板 Download PDF

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CN105242469A
CN105242469A CN201510730916.7A CN201510730916A CN105242469A CN 105242469 A CN105242469 A CN 105242469A CN 201510730916 A CN201510730916 A CN 201510730916A CN 105242469 A CN105242469 A CN 105242469A
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electrode layer
capacitor
pixel
dielectric layer
layer
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刘桓
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2015/094035 priority patent/WO2017075820A1/zh
Priority to US14/898,226 priority patent/US20170256571A1/en
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Abstract

本发明提供一种分担电容器、包括该分担电容器的像素及阵列基板。该分担电容器包括：第一电极层；第一介电层，设置在第一电极层上；第二电极层，设置在第一介电层上并通过第一介电层与第一电极层电绝缘；第二介电层，设置在第二电极层上；第三电极层，设置在第二介电层上并且通过第二介电层与第二电极层电绝缘；其中，第三电极层与第一电极层电连接。通过本发明提供的分担电容器及包括该分担电容器的像素，能够提高像素开口率，从而提高薄膜晶体管液晶显示器的产品品质。

Description

一种分担电容器、包括该分担电容器的像素及阵列基板
技术领域
本发明涉及薄膜晶体管液晶显示器领域，具体来说，涉及一种分担电容器、包括该分担电容器的像素及阵列基板。
背景技术
在采用垂直配向技术(即，VA技术)的薄膜晶体管液晶显示器(TFT-LCD)中，通常将像素分为主区与副区，通过使副区的像素电压低于主区的像素电压，使得副区的液晶取向与主区的液晶取向不同，从而改善大视角色偏。
为了使副区的像素电压低于主区的像素电压，通常采用电荷分担(Charge-sharing)技术。图1中示出了采用电荷分担技术的像素结构。如图1所示，像素包括主区(Main区)和副区(Sub区)并且包括主薄膜晶体管2、副薄膜晶体管3、充电栅线4、分担栅线5和分担薄膜晶体管6。当充电栅线4开启时，信号线向主区和副区的像素电极ITO充电后，充电栅线4关闭，分担栅线5开启，使得分担电容器1与副区的像素电极ITO导通，从而使分担电容器1分担一部分副区像素电极上原本充满的电荷，因此，副区的像素电极的电压降低到适当比例，实现副区与主区电压值不同。
现有技术中的分担电容器一般包括MII结构和MIS结构这两种结构。
图2示出了根据现有技术的分担电容器的MII结构的截面图，图3示出了图2的分担电容器的电路图。如图2所示，分担电容器100包括依次设置在阵列基板110上的第一金属层101、第一介电层102、第二介电层103和像素电极层104。其中，第一金属层101和像素电极层104分别是分担电容器100的两个极板，像素电极层104可以由氧化铟锡形成。如图3所示，第一金属板101连接到V共电位，并且，由于像素电极层104通过通孔106连接到第二金属层105，使得像素的副区电荷通过分担薄膜晶体管6(见图1)被分担到像素电极层104上，则像素电极层104的电位为V分担。
图4示出了根据现有技术的分担电容器的MIS结构的截面图，图5是图4的分担电容器的电路图。如图4所示，分担电容器200包括依次设置在阵列基板210上的第一金属层201、第一介电层202和第二金属层203，另外，在第二金属层203上还设置有第二介电层220。其中，第一金属层201和第二金属层203分别是分担电容器200的两个极板。如图5所示，第一金属层201连接到V共电位，第二金属层连接到分担薄膜晶体管6(见图1)，其电位为V分担。
但是，在像素中设置以上分担电容器会损失像素的开口率，而且分担电容器的极板面积越大，像素开口率损失越大。
虽然在同样电容大小下减小极板面积能够提高像素开口率，从而提高TFT-LCD产品的穿透率，最终提升产品品质。但为了使副区电压降到合适的值，必须使分担电容器能够分担合适的电荷量Q。分担电容器分担的电荷量可以由下式(1)表示：
Q＝C·V(式1)
其中，C为分担电容器的电容值，V为分担电容器的两极板的电位差。对于每一个固定的灰阶电压而言，V的值是固定的，因此需要将分担电容器的电容设计为合适的值，才能获得合适的大视角色偏效果。分担电容器的电容可以由下式2表示：
C = ϵ A d (式2)
其中，ε为电解质介电系数，A为极板面积，d为两极板间的距离。
因此，如果减小分担电容器的极板的面积，虽然能够增大像素开口率，但是，如上式可知，分担电容器的电容也会减小，从而无法分担足够的电荷。
发明内容
为克服现有技术的不足，本发明提供分担电容器、包括该分担电容器的像素及阵列基板。
本发明的分担电容器包括：第一电极层；第一介电层，设置在第一电极层上；第二电极层，设置在第一介电层上并通过第一介电层与第一电极层电绝缘；第二介电层，设置在第二电极层上；第三电极层，设置在第二介电层上并且通过第二介电层与第二电极层电绝缘；其中，第三电极层与第一电极层电连接。
根据本发明的一个实施例，分担电容器还可以包括设置在第一电极层之上的通孔，第三电极层通过通孔与第一电极层电连接。
根据本发明的一个实施例，通孔可以贯穿第一介电层和/或第二介电层。
根据本发明的一个实施例，第一介电层可以包括氮化硅(SiNx)。
根据本发明的一个实施例，第二介电层可以包括氮化硅。
根据本发明的一个实施例，第三电极层可以包括氧化铟锡。
本发明还提供一种像素，该像素包括上述分担电容器。
根据本发明的一个实施例，像素还可以包括主区和副区，分担电容器电连接到副区，使得副区的像素电压低于主区的像素电压。
本发明还提供一种阵列基板，上述分担电容器可以设置在该阵列基板上。
根据本发明的一个实施例，上述阵列基板可以是玻璃基板。
通过本发明提供的分担电容器及包括该分担电容器的像素，能够提高像素开口率，从而提高薄膜晶体管液晶显示器的产品品质。
附图说明
通过下面结合附图进行的对实施例的描述，本发明的上述和/或其他目的和优点将会变得更加清楚，其中：
图1示出了采用电荷分担技术的像素结构的示意图。
图2示出了根据现有技术的分担电容器的MII结构的截面图。
图3是图2的分担电容器的电路图。
图4示出了根据现有技术的分担电容器的MIS结构的截面图。
图5是图4的分担电容器的电路图。
图6示出了根据本发明实施例的分担电容器的截面图。
图7是图6的分担电容器的电路图。
具体实施方式
现在在下文中将参照附图更充分地描述示例实施例，然而，示例实施例可以以不同的形式来实施，并不应该被解释为限于在此阐述的实施例。相反，提供这些实施例是为了使这公开将是彻底的和完整的，并将把示例性实施方式充分地传达给本领域技术人员。
将理解的是，当元件或层被称作“在”另一元件或层“上”、“连接到”或“结合到”另一元件或层时，它可以直接在另一元件或层上、直接连接到或直接结合到另一元件或层，或者可存在中间元件或中间层。相反，当元件被称作“直接在”另一元件或层上、“直接连接到”或“直接结合到”另一元件或层时，不存在中间元件或中间层。
将理解的是，尽管在这里可使用术语第一、第二等来描述不同的元件、组件、区域、层和/或部分，但是这些元件、组件、区域、层和/或部分并不受这些术语的限制。这些术语仅是用来将一个元件、组件、区域、层和/或部分与另一个元件、组件、区域、层和/或部分区分开来。因此，在不脱离本发明的教导的情况下，下面讨论的第一元件、组件、区域、层或部分可被命名为第二元件、组件、区域、层或部分。
在这里可使用空间相对术语，如“在…下方”、“在…下面”、“下面的”、“在…上方”、“上面的”等，用来轻松地描述如图中所示的一个元件或特征与其它元件或特征的关系。应该理解的是，空间相对术语意在包含除了在附图中描述的方位之外的装置在使用或操作中的不同方位。
本发明的分担电容器包括：第一电极层；第一介电层，设置在第一电极层上；第二电极层，设置在第一介电层上并通过第一介电层与第一电极层电绝缘；第二介电层，设置在第二电极层上；第三电极层，设置在第二介电层上并且通过第二介电层与第二电极层电绝缘；其中，第三电极层与第一电极层电连接。
而根据本发明提供的分担电容器，在保持相同的电容值的情况下，能够减小极板面积，从而增大像素的开口率。
下面将结合图6和图7来详细说明根据本发明实施例的分担电容器300的截面图和电路图。其中，图6示出了根据本发明实施例的分担电容器300的截面图，图7是图6的分担电容器300的电路图。如图6所示，根据本实施例的分担电容器包括设置在阵列基板310上的第一电极层301、设置在第一电极层301上的第一介电层302、设置在第一介电层302上的第二电极层303、设置在第二电极层303上的第二介电层304、以及设置在第二介电层304上的第三电极层305，其中，第二电极层303通过第一介电层302与第一电极层301电绝缘，第三电极层305通过第二介电层304与第二电极层303电绝缘，第三电极层305通过通孔306与第一电极层301电连接。
本发明中的阵列基板310可以是玻璃基板，但本发明不限于此。另外，在本实施例中，通孔306贯穿第一介电层302和第二介电层304，使得第一电极层301暴露在第三电极层305中，从而使第三电极层305与第一电极层301电连接。需要说明的是，通孔306只要在保证第三电极层305与第二电极层303绝缘的情况下，使得第三电极层305与第一电极层301电连接即可，其形状和设置位置没有特别的限制。
在本实施例中，第一介电层302可以包括氮化硅(SiNx)。第二介电层304也可以包括氮化硅。另外，第三电极层305可以用作像素电极层并包括氧化铟锡(ITO)。
由图6可知，根据本实施例的分担电容器与传统分担电容器结构完全不同。根据本实施例的分担电容器采用第一电极层301(M1)||第二电极层303(M2)||第三电极层305(ITO)这种三层的电容器结构，通过通孔306将第三电极层305连接至第一电极层301。这样，如图7所示，使第三电极层305和第一电极层301连接到V共电位，将第二电极层303连接分担薄膜晶体管6(见图1)，使其处于V分担电位。这种“层叠”的电容器结构能够减小分担电容器的极板面积，从而增大像素开口率，提升产品穿透率，从而提升产品品质。
本发明还提供一种像素，在该像素中，设置有本发明的分担电容器。在该像素中，除设置有本发明的分担电容器以外，其它结构与图1所示的像素基本相同，在此不再赘述。
如上所述，本发明分担电容器采用如图所示的M1||M2||ITO三层电容器结构。由此，第一电极层301与第二电极层303间形成子电容器C1，第二电极层303与第三电极层305间形成子电容器C2，C1与C2实质上呈并联关系，因此最终的分担电容器300的电容的大小为C＝C1+C2。这样，同样的极板面积下，C大于C1或者C2。因此，相比于传统的分担电容器结构，对于同样像素，本发明的分担电容器结构需要更小的极板面积，从而能够提高像素的开口率，从而提升产品穿透率，提升产品品质。另外，其实施也非常简单，不需要其他新增制程。
综上所述，通过本发明提供的分担电容器及包括该分担电容器的像素，能够提高像素开口率，从而提高薄膜晶体管液晶显示器的产品品质。
虽然已经参照本发明的示例性实施例具体地示出并描述了本发明，但是本领域普通技术人员将理解，在不脱离如所附权利要求和它们的等同物所限定的本发明的精神和范围的情况下，可以在此做出形式和细节上的各种改变。应当仅仅在描述性的意义上而不是出于限制的目的来考虑实施例。因此，本发明的范围不是由本发明的具体实施方式来限定，而是由权利要求书来限定，该范围内的所有差异将被解释为包括在本发明中。

Claims (10)

1.一种分担电容器，其特征在于，所述分担电容器包括：
第一电极层；
第一介电层，设置在第一电极层上；
第二电极层，设置在第一介电层上并通过第一介电层与第一电极层电绝缘；
第二介电层，设置在第二电极层上；
第三电极层，设置在第二介电层上并且通过第二介电层与第二电极层电绝缘；
其中，第三电极层与第一电极层电连接。
2.根据权利要求1所述的分担电容器，其特征在于，所述分担电容器还包括设置在第一电极层之上的通孔，所述第三电极层通过通孔与第一电极层电连接。
3.根据权利要求1所述的分担电容器，其特征在于，所述通孔贯穿第一介电层和/或第二介电层。
4.根据权利要求1所述的分担电容器，其特征在于，所述第一介电层包括氮化硅。
5.根据权利要求1所述的分担电容器，其特征在于，所述第二介电层包括氮化硅。
6.根据权利要求1所述的分担电容器，其特征在于，所述第三电极层包括氧化铟锡。
7.一种像素，其特征在于，所述像素包括权利要求1至6中任一项所述的分担电容器。
8.根据权利要求7所述的像素，其特征在于，所述像素还包括主区和副区，分担电容器电连接到副区，使得副区的像素电压低于主区的像素电压。
9.一种阵列基板，其特征在于，在所述阵列基板上设置有所述权利要求1至6中任一项所述的分担电容器。
10.根据权利要求9所述的阵列基板，其特征在于，所述阵列基板是玻璃基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111162096A (zh) * 2020-01-02 2020-05-15 昆山国显光电有限公司 阵列基板以及显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053438A (zh) * 2009-10-28 2011-05-11 三星电子株式会社 液晶显示器
CN102197336A (zh) * 2008-11-05 2011-09-21 夏普株式会社 有源矩阵基板、液晶面板、液晶显示单元、液晶显示装置、电视接收机
CN102298238A (zh) * 2011-08-19 2011-12-28 深圳市华星光电技术有限公司 液晶显示器
US20140138786A1 (en) * 2012-04-10 2014-05-22 Drs Rsta, Inc. High density capacitor integrated into focal plane array processing flow

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232589B1 (en) * 1999-01-19 2001-05-15 Photon Vision Systems Single polysilicon CMOS pixel with extended dynamic range
CN201222151Y (zh) * 2008-03-03 2009-04-15 上海广电光电子有限公司 液晶显示装置及其像素结构
CN101738804B (zh) * 2009-12-30 2011-10-05 友达光电股份有限公司 像素结构
CN103676384A (zh) * 2013-12-26 2014-03-26 深圳市华星光电技术有限公司 Tft基板及用该tft基板的液晶显示面板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102197336A (zh) * 2008-11-05 2011-09-21 夏普株式会社 有源矩阵基板、液晶面板、液晶显示单元、液晶显示装置、电视接收机
CN102053438A (zh) * 2009-10-28 2011-05-11 三星电子株式会社 液晶显示器
CN102298238A (zh) * 2011-08-19 2011-12-28 深圳市华星光电技术有限公司 液晶显示器
US20140138786A1 (en) * 2012-04-10 2014-05-22 Drs Rsta, Inc. High density capacitor integrated into focal plane array processing flow

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111162096A (zh) * 2020-01-02 2020-05-15 昆山国显光电有限公司 阵列基板以及显示面板

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