CN105242335B - The preparation method of LED panel lamp diffuser plate - Google Patents
The preparation method of LED panel lamp diffuser plate Download PDFInfo
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- CN105242335B CN105242335B CN201510701825.0A CN201510701825A CN105242335B CN 105242335 B CN105242335 B CN 105242335B CN 201510701825 A CN201510701825 A CN 201510701825A CN 105242335 B CN105242335 B CN 105242335B
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- diffuser plate
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
- G02B5/0215—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having a regular structure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0268—Diffusing elements; Afocal elements characterized by the fabrication or manufacturing method
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Light Guides In General And Applications Therefor (AREA)
- Planar Illumination Modules (AREA)
Abstract
The present invention relates to a kind of preparation method of LED panel lamp diffuser plate, it comprises the following steps:A, offer master substrate, and bilayer mask layer is set in the front of the master substrate;B, on above-mentioned bilayer mask layer make required etching window;C, longitudinal etching is carried out, groove is obtained with the master substrate;D, lateral etching is carried out, to obtain some stamper micro-convex structures;E and the back side to master substrate carry out thinning;F, above-mentioned master substrate is cut, to obtain required stamper;G, by above-mentioned metal negative load injection machine in, the diffuser plate similar to CD is prepared using conventional Shooting Technique, the center of the diffuser plate is provided with the diffuser plate circular hole of insertion diffuser plate, and the guide-lighting micro-structural corresponding with stamper micro-convex structure is formed in diffuser plate.Present invention process is simple, mutually compatible with existing semiconductor technology, can ensure that the front light-out effect of diffuser plate, safe and reliable.
Description
Technical field
The present invention relates to a kind of preparation method, especially a kind of preparation method of LED panel lamp diffuser plate, belongs to diffusion
Technical field prepared by plate.
Background technology
CD is widely used to area information storage as the carrier of information Store, and the data recorded on CD are in
Helical form, is outwards scattered by center, and optical disc surface has the small hole point of many densifications, for recording digital information.
LED (Light Emitting Diode, light emitting diode) technologies are with its power saving, brightness high, long service life, anti-
The advantages of shock stability is good is widely popularized, and application of the LED in terms of normal lighting and display in recent years is more and more wider
It is general.Therefore, the LED illumination light source needed for how being obtained using compact disk structure is a prior art gesture problem to be solved.
Additionally, for LED panel lamp, how to prepare ensures that the front light-out effect of diffuser plate is a problem.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided a kind of system of LED panel lamp diffuser plate
Preparation Method, its process is simple is mutually compatible with existing semiconductor technology, can ensure that the front light-out effect of diffuser plate, safe and reliable.
According to the present invention provide technical scheme, a kind of preparation method of LED panel lamp diffuser plate, the diffuser plate
Preparation method comprises the following steps:
A, offer master substrate, and bilayer mask layer, the bilayer mask layer bag are set in the front of the master substrate
Include and be covered in the positive bottom mask of master substrate and the photoresist layer on bottom mask;
B, on above-mentioned bilayer mask layer make required etching window, the etching window insertion photoresist layer and bottom
Layer mask layer;
C, longitudinal etching is carried out to master substrate using above-mentioned etching window, groove is obtained with the master substrate,
The groove is extended downwardly from the front vertical of master substrate;
D, lateral etching is carried out to the groove in above-mentioned master substrate using etching window, to obtain some stamper dimpling knots
Structure;
E, the bottom mask and photoresist layer removed in above-mentioned stamper micro-convex structure, and the back side to master substrate carries out
It is thinning;
F, above-mentioned master substrate is cut using wire cutting, to obtain required stamper, will using electroforming process
The stamper is peeled off after carrying out pirate recordings, to obtain required metal negative:
G, above-mentioned metal negative is loaded in injection machine, the diffusion similar to CD is prepared using conventional Shooting Technique
Plate, the center of the diffuser plate is provided with the diffuser plate circular hole of insertion diffuser plate, and is formed in diffuser plate and stamper dimpling
The corresponding guide-lighting micro-structural of structure.
The bottom mask includes silicon dioxide layer, and the silicon dioxide layer is being grown in master substrate just by PECVD
Face, the thickness of bottom mask is 200nm~2000nm, and the thickness of the photoresist layer is 10 μm~50 μm.
In step b, when making etching window on bilayer mask layer, comprise the following steps:
B1, photoetching is carried out to photoresist layer using reticle, window is etched with the photoresist for obtaining some insertion photoresist layers
Mouthful;
B2, bottom mask is performed etching using BOE solution, to obtain the bottom mask etching window of insertion bottom mask
Mouthful, the bottom mask etching window (12) is corresponding with photoresist etching window consistent.
In step c, when longitudinal direction etching is carried out to master substrate, the upper substrate bias power of ICP etching apparatus for 1000W~
1500W, lower substrate bias power is 0W~50W, etching gas BCl3Flow be 100sccm~150sccm, etching gas Cl2Stream
It is 5sccm~10sccm to measure, and longitudinal etch period is 1500s~3000s.
In step d, when carrying out lateral etching to master substrate, the upper substrate bias power of ICP etching apparatus for 500W~
1000W, lower substrate bias power is 300W~1000W, etching gas BCl3Flow be 50sccm~100sccm, etching gas Cl2
Flow be 10sccm~50sccm, the lateral etching time be 500s~1000s.
In step e, the back side of master substrate is carried out thinning using being ground, to cause the thickness of thinning rear master substrate to be
300μm。
The shape of the stamper micro-convex structure includes coniform, hemispherical or round table-like.
The material of the diffuser plate includes optical grade PC (makrolon), polymethyl methacrylate (PMMA) or polyphenyl second
Alkene (PS);The radius of the diffuser plate is 60 ± 1mm, and thickness is 1.2 ± 0.1mm, and the radius of diffuser plate circular hole is 10-40mm.
Guide-lighting micro-structural in the diffuser plate arranges to form guide-lighting and scattered for carrying out the light for entering diffuser plate
The light conductor penetrated, the light conductor is in the spiral distribution around diffuser plate circular hole in diffuser plate, or light conductor is in diffuser plate
Be parallel to each other the circular distribution of distribution in multiple.
The master substrate includes Sapphire Substrate or silicon substrate.
Advantages of the present invention:The bilayer mask layer of photoresist layer and bottom mask is set in master substrate, is made and is carved
After fenetre mouthful, longitudinal etching and lateral etching are carried out to master substrate using ICP equipment, to obtain stamper micro-convex structure, led to
Cross carries out thinning and wire cutting and obtains stamper to master substrate, and required diffusion is prepared by being molded function using stamper
Plate, required LED panel lamp can be prepared using diffuser plate, and process is simple is mutually compatible with existing semiconductor technology, can ensure that diffusion
The front light-out effect of plate, it is safe and reliable.
Brief description of the drawings
Fig. 1 is the structural representation that the present invention forms LED panel lamp.
Fig. 2 is the schematic diagram that LED illumination light source of the present invention coordinates with guide-lighting micro-structural.
Fig. 3 is distribution schematic diagram of the light conductor of the present invention on diffuser plate.
Fig. 4~Fig. 8 is the specific implementation structure sectional view that the present invention prepares stamper, wherein
Fig. 4 is the sectional view after the present invention obtains bilayer mask layer in master substrate.
Fig. 5 is that the present invention obtains the sectional view after etching window.
Fig. 6 is the sectional view after the present invention is etched in length and breadth to master substrate.
Fig. 7 is that the present invention carries out the sectional view after lateral etching to master substrate.
Fig. 8 is the structural representation that the present invention obtains stamper.
Description of reference numerals:1- diffuser plates, 2- diffuser plates circular hole, 3-LED lighting sources, 4- leaded lights micro-structural, 5- reflections
Film, 6- light conductors, 7- stripper loops, 8- photoresist layers, 9- bottoms mask, 10- master substrates, 11- photoresists etching window, 12-
Bottom mask etching window, 13- grooves, 14- stampers micro-convex structure, 15- stampers circular hole and 16- stampers.
Specific embodiment
With reference to specific drawings and Examples, the invention will be further described.
As depicted in figs. 1 and 2:The schematic diagram of LED panel lamp, the LED faces are prepared using diffuser plate 1 for the present invention
Plate light fixture has light soft uniform, and the characteristics of with high-luminous-efficiency, specifically, is provided with the center of the diffuser plate 1
The diffuser plate circular hole 2 of insertion diffuser plate 1;Some LED illumination light sources 3, institute are provided with the diffuser plate circular hole 2 of the diffuser plate 1
The exiting surface for stating LED illumination light source 3 is attached on the inwall of through hole 2, is provided with some for LED on the light guiding surface of diffuser plate 1
Light leaded light and the light conductor 6 of scattering that lighting source 3 is injected;Diffuser plate 1 can cause LED photographs using after the leaded light of light conductor 6
The light that Mingguang City source 3 sends sends the light of homogeneous soft after the leaded light of light conductor 6 from the exiting surface of diffuser plate 1.
Specifically, diffuser plate 1 is made of transparent plastics, and diffuser plate 1 is in the form of annular discs, i.e., with existing CD identical shape
Shape, diffuser plate 1 can be formed using existing CD.The material of the diffuser plate 1 is optical grade PC (makrolon), poly- methyl-prop
E pioic acid methyl ester (PMMA) or polystyrene (PS), the radius of the diffuser plate 1 is 60 ± 1mm, and thickness is 1.2 ± 0.1mm, through hole
Radius is 10-40mm.Distributed areas of the light conductor 6 on diffuser plate 1 are corresponding with the information area of existing CD consistent.
The center of diffuser plate 1 sets the diffuser plate circular hole 2 of insertion diffuser plate 1, and diffuser plate circular hole 2 is with diffuser plate 1 in same
Axle is distributed.In the inwall of diffuser plate circular hole 2, some LED illumination light sources 3, bottom surface and the diffuser plate 1 of LED illumination light source 3 are set
Bottom surface is parallel, i.e., the bottom surface of LED illumination light source 3 is parallel with the light guiding surface of diffuser plate 1.The height of LED illumination light source 3 is
0.6mm, the light structures form that LED illumination light source 3 can be lighted using existing conventional side, the exiting surface patch of LED illumination light source 3
In the inwall of diffuser plate circular hole 2, and fixed with diffuser plate 1.The light that LED illumination light source 3 sends enters in diffuser plate 1, and by
After light conductor 6 in diffuser plate 1 carries out guide-lighting and scattering, projected from the exiting surface of diffuser plate 1, reach uniform light soft
Purpose, while improve light extraction efficiency.
Further, reflectance coating 5 is coated with the light guiding surface of the diffuser plate 1, is provided with some equal in each light conductor 6
The guide-lighting micro-structural 4 of even distribution, the guide-lighting micro-structural 4 is in coniform, and the drift angle of guide-lighting micro-structural 4 points to going out for diffuser plate 1
Smooth surface.
In the embodiment of the present invention, reflectance coating 5 can be aluminium film, after the one side of diffuser plate 1 is coated with reflectance coating 5, can be further
Improve the light extraction efficiency from the exiting surface of diffuser plate 1.The bottom surface of guide-lighting micro-structural 4 is located on the light guiding surface of diffuser plate 1.It is guide-lighting micro-
Structure 4 is in each light conductor 6 and is uniformly distributed, i.e., the leaded light for being formed by guide-lighting micro-structural 4 with multi-turn in diffuser plate 1
Body 6.Additionally, guide-lighting micro-structural 4 can also be in hemispherical or round table-like, when guide-lighting micro-structural 4 is in hemispherical, the centre of sphere is near diffusion
The light guiding surface of plate 1, the direction that the centre of sphere points to outer wall is consistent with the direction that light guiding surface points to exiting surface, and the radius of hemisphere is 15 μm
~200 μm.When guide-lighting micro-structural 4 is in round table-like, the large end face of round platform points to the direction of small end face and light guiding surface points to light extraction
The direction in face is consistent.
As shown in figure 3, the light conductor 6 is in the annular spread around diffuser plate circular hole 2, the diffuser plate 1 in diffuser plate 1
Light guiding surface on formation light conductor 6 is set between some stripper loops 7, adjacent stripper loop 7, light conductor 6 is nine on diffuser plate 1.
10 being set during specific implementation, on the light guiding surface of diffuser plate 1 and enclosing stripper loop 7, the center of circle of stripper loop 7 is diffuser plate 1
The center of circle, the coaxial parallel distribution of the interbed of stripper loop 7.Region between adjacent stripper loop 7 is light conductor 6, is passed through on diffuser plate 1
Stripper loop 1 forms nine light conductors 6.In order to improve guide-lighting and dispersion effect, during specific implementation, stripper loop 7 on diffuser plate 1
Radius is followed successively by 18mm, 21mm, 25mm, 30mm, 35mm, 40mm, 45mm, 50mm, 55mm and 59.5mm.Certainly, it is specific real
Shi Shi, light conductor 6 can also be in the spiral distribution around through hole 2.When light conductor 6 is using spiral distribution, in light conductor 6
Including the guide-lighting micro-structural 4 consistent with the shape of light conductor 6.
Further, the drift angle of the guide-lighting micro-structural 4 is 90 °, and the height of guide-lighting micro-structural 4 is 0.04mm;Light conductor 6
Space D between interior guide-lighting micro-structural 4 is
D=k*d;
Wherein, the initial spacing between d is adjacent guide-lighting micro-structural 4, initial spacing d is 0.15mm, and k is each light conductor 6
Spacing regulation coefficient, on diffuser plate 1 the spacing regulation coefficient k of light conductor 6 be followed successively by 1.7345 from the inside to the outside, 1.7335,
1.5825、1.41705、1.3155、1.1407、1.0085、0.818、0.6235。
, it is necessary to the original position for being pointed in light conductor 6 guide-lighting micro-structural 4 is configured in the embodiment of the present invention, when leading
After the original position of light micro-structural 4 determines, the position of remaining guide-lighting micro-structural 4 is can determine that according to above-mentioned space D, that is, complete guide-lighting
Arrangement of the micro-structural 4 in each light conductor 6.
During specific implementation, rectangular coordinate system can be set up to diffuser plate 1, the origin of rectangular coordinate system is the circle of diffuser plate 1
The heart, the unit of rectangular coordinate system is 1mm.For first light conductor 6 in the neighbouring center of circle of diffuser plate 1, in the light conductor 6
The initial coordinate in length and breadth of guide-lighting micro-structural 4 is (- 21+D1).And for the second light conductor 6 of neighbouring first light conductor 6, its
The initial coordinate in length and breadth of interior guide-lighting micro-structural 4 is (- 25+D2), wherein, D1 is 1.7345*0.15, and D2 is 1.7335*0.15.
For all guide-lighting micro-structural 4 being optionally located in same light conductor 6, the equal position of line in the bottom surface center of circle of all guide-lighting micro-structurals 4
In on same annulus.The determination of the guide-lighting initial position of micro-structural 4 is carried out according to the above description in remaining light conductor 6 on diffuser plate 1
Confirm successively, specifically will not enumerate.
As shown in Fig. 4~Fig. 8, in order to be able to prepare the diffuser plate 1 of above-mentioned LED panel lamp, to meet LED panel lamp
Light extraction requirement, the preparation method of the diffuser plate comprises the following steps:
A, offer master substrate 10, and bilayer mask layer, the bilayer mask are set in the front of the master substrate 10
Layer includes being covered in the positive bottom mask 9 of master substrate 10 and the photoresist layer on bottom mask 98;
As shown in figure 4, the bottom mask 9 includes silicon dioxide layer, the silicon dioxide layer is grown in mother by PECVD
The front of disk substrate 10, the thickness of bottom mask 9 is 200nm~2000nm, and the thickness of the photoresist layer 8 is 10 μm~50 μ
m.Master substrate 10 can be Sapphire Substrate or silicon substrate.
B, required etching window is made on above-mentioned bilayer mask layer, the etching window insertion photoresist layer 8 and
Bottom mask layer 9;
As shown in figure 5, when making etching window on bilayer mask layer, comprising the following steps:
B1, photoetching is carried out to photoresist layer 8 using reticle, etched with the photoresist for obtaining some insertion photoresist layers 8
Window 11;
B2, bottom mask 9 is performed etching using BOE solution, to obtain the bottom mask etching window of insertion bottom mask 9
Mouth 12, the bottom mask etching window 12 is consistent with the correspondence of photoresist etching window 11.
In the embodiment of the present invention, the etching window of making is mainly used in performing etching master substrate 10, to obtain stamper
Micro-convex structure 14, the stamper micro-convex structure 14 is corresponding with the guide-lighting micro-structural 4 in diffuser plate 1, therefore, making etching window
Mouthful when, it is possible to use Tracepro simulation softwards simulate the distribution of guide-lighting micro-structural 4, obtain the distribution of stamper micro-convex structure 14
And relative dimensions, so as to obtain corresponding reticle, the process that sunykatuib analysis obtains reticle is those skilled in the art
Known, here is omitted.
Photoetching is carried out to photoresist layer 8 using reticle, photoresist etching window 11 is obtained, window is being etched according to photoresist
Mouth 11 is performed etching using BOE solution to silicon dioxide layer, obtains bottom mask etching window 12, i.e. bottom mask etching window
12 are collectively forming etching window with photoresist etching window 11, and following etchings to master substrate 10 can be met using etching window
It is required that.The technological means known to the art is performed etching to silicon dioxide layer using BOE solution, specifically bottom is covered
The process that the etching of film 9 obtains bottom mask etching window 11 is repeated no more.
C, longitudinal etching is carried out to master substrate 10 using above-mentioned etching window, ditch is obtained with the master substrate 10
Groove 13, the groove 13 is extended downwardly from the front vertical of master substrate 10;
As shown in fig. 6, when carrying out longitudinal direction etching to master substrate 10, the upper substrate bias power of ICP etching apparatus for 1000W~
1500W, lower substrate bias power is 0W~50W, etching gas BCl3Flow be 100sccm~150sccm, etching gas Cl2Stream
It is 5sccm~10sccm to measure, and longitudinal etch period is 1500s~3000s.
D, lateral etching is carried out to the groove 13 in above-mentioned master substrate 10 using etching window, it is micro- to obtain some stampers
Male structure 14;
As shown in fig. 7, when carrying out lateral etching to master substrate 10, the upper substrate bias power of ICP etching apparatus for 500W~
1000W, lower substrate bias power is 300W~1000W, etching gas BCl3Flow be 50sccm~100sccm, etching gas Cl2
Flow be 10sccm~50sccm, the lateral etching time be 500s~1000s.The shape of the stamper micro-convex structure 14 includes
Coniform, hemispherical or round table-like, the concrete shape of stamper micro-convex structure 14 can be selected as needed, in stamper dimpling
After the shape of structure 14 determines, the shape for preparing guide-lighting micro-structural 4 in diffuser plate 1 determines therewith.
E, the bottom mask 9 and photoresist layer 8 removed in above-mentioned stamper micro-convex structure 14, and to the back of the body of master substrate 10
Face carries out thinning;
In the embodiment of the present invention, bottom mask 9 and photoresist layer 8 are removed by conventional technical means, and stamper is served as a contrast
Bottom 10 is cleaned, and the master substrate 10 after cleaning is carried out it is thinning, it is thinning after the thickness of master substrate 10 be 300 μm, it is right
The specific thinning process of master substrate 10 is that here is omitted known to those skilled in the art.
F, above-mentioned master substrate 10 is cut using wire cutting, to obtain required stamper 16, using electroforming work
Skill is peeled off after the stamper 16 is carried out into pirate recordings, to obtain required metal negative:
In the embodiment of the present invention, master substrate 10 is cut using conventional wire cutting technology, in cutting, to subtracting
The central area of master substrate 10 and outer ring redundance after thin are cut, to obtain the stamper 16 of circle.In order to be able to
Diffuser plate 1 is obtained using the preparation technology of existing CD, the preparation cost of diffuser plate 1 is reduced, the stamper 16 to being formed carries out electricity
Casting, obtains having the metal negative through hole consistent with stamper through hole 15 in metal negative, the metal negative after stripping.It is right
Stamper 16 carries out electroforming and the detailed process of stripping is known to those skilled in the art, and here is omitted.
G, above-mentioned metal negative is loaded in injection machine, the diffuser plate similar to CD is prepared using conventional Shooting Technique
1, the center of the diffuser plate 1 is provided with the diffuser plate circular hole 2 of insertion diffuser plate 1, and is formed in diffuser plate 1 micro- with stamper
The corresponding guide-lighting micro-structural 4 of male structure 14.
In the embodiment of the present invention, the injection machine can be the existing injection-moulding device for preparing CD, and stamper 16 is transferred to injection
After machine, the process for preparing diffuser plate 1 using stamper 16 is consistent with the process that CD is prepared using injection machine, specifically no longer goes to live in the household of one's in-laws on getting married
State.
The present invention sets the bilayer mask layer of photoresist layer 8 and bottom mask 9 in master substrate 10, makes etching window
After mouthful, longitudinal etching and lateral etching are carried out to master substrate 10 using ICP equipment, to obtain stamper micro-convex structure 14, led to
Cross carries out thinning and wire cutting and obtains stamper 16 to master substrate 10, needed for being prepared by being molded function using stamper 16
Diffuser plate 1, can prepare required LED panel lamp using diffuser plate 1, process is simple is mutually compatible with existing semiconductor technology, energy
Ensure the front light-out effect of diffuser plate, it is safe and reliable.
Claims (10)
1. a kind of preparation method of LED panel lamp diffuser plate, it is characterized in that, the preparation method of the diffuser plate includes following step
Suddenly:
(a), provide master substrate(10), and in the master substrate(10)Front bilayer mask layer is set, the bilayer covers
Film layer includes being covered in master substrate(10)Positive bottom mask(9)And positioned at bottom mask(9)On photoresist layer
(8);
(b), on above-mentioned bilayer mask layer make required etching window, the etching window insertion photoresist layer(8)And
Bottom mask(9);
(c), using above-mentioned etching window to master substrate(10)Longitudinal etching is carried out, with the master substrate(10)Inside obtain
Groove(13), the groove(13)From master substrate(10)Front vertical extend downwardly;
(d), using etching window to above-mentioned master substrate(10)Interior groove(13)Lateral etching is carried out, to obtain some stampers
Micro-convex structure(14);
(e), remove above-mentioned stamper micro-convex structure(14)On bottom mask(9)And photoresist layer(8), and to master substrate
(10)The back side carry out it is thinning;
(f), using wire cutting to above-mentioned master substrate(10)Cut, to obtain required stamper(16), using electroforming
Technique is by the stamper(16)Peeled off after carrying out pirate recordings, to obtain required metal negative:
(g), above-mentioned metal negative loaded in injection machine, prepare the diffuser plate similar to CD using conventional Shooting Technique
(1), the diffuser plate(1)Center be provided with insertion diffuser plate(1)Diffuser plate circular hole(2), and in diffuser plate(1)Interior formation
In with stamper micro-convex structure(14)Corresponding guide-lighting micro-structural(4).
2. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that:The bottom mask(9)
Including silicon dioxide layer, the silicon dioxide layer is grown in master substrate by PECVD(10)Front, bottom mask(9)'s
Thickness is 200nm ~ 2000nm, the photoresist layer(8)Thickness be 10 μm ~ 50 μm.
3. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that, step(b)In, double
When making etching window on layer mask layer, comprise the following steps:
(b1), using reticle to photoresist layer(8)Photoetching is carried out, to obtain some insertion photoresist layers(8)Photoresist carve
Fenetre mouthful(11);
(b2), using BOE solution to bottom mask(9)Perform etching, to obtain insertion bottom mask(9)Bottom mask etching
Window(12), the bottom mask etching window(12)With photoresist etching window(11)Correspondence is consistent.
4. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that:Step(c)In, to mother
Disk substrate(10)When carrying out longitudinal direction etching, the upper substrate bias power of ICP etching apparatus is 1000W ~ 1500W, lower substrate bias power be 0W ~
50W, etching gas BCl3Flow be 100sccm ~ 150sccm, etching gas Cl2Flow be 5sccm ~ 10sccm, longitudinal direction carve
The erosion time is 1500s ~ 3000s.
5. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that:Step(d)In, to mother
Disk substrate(10)When carrying out lateral etching, the upper substrate bias power of ICP etching apparatus is 500W ~ 1000W, and lower substrate bias power is 300W
~ 1000W, etching gas BCl3Flow be 50sccm ~ 100sccm, etching gas Cl2Flow be 10sccm ~ 50sccm, it is horizontal
It is 500s ~ 1000s to etch period.
6. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that:Step(e)In, utilize
Grinding is to master substrate(10)The back side carry out it is thinning, with cause thinning rear master substrate(10)Thickness be 300 μm.
7. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that:The stamper dimpling knot
Structure(14)Shape include it is coniform, hemispherical or round table-like.
8. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that:The diffuser plate(1)'s
Material includes polycarbonate pc, polymethyl methacrylate or polystyrene;The diffuser plate(1)Radius for 60 ±
1mm, thickness is 1.2 ± 0.1mm, diffuser plate circular hole(2)Radius be 10-40mm.
9. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that:The diffuser plate(1)It is interior
Guide-lighting micro-structural(4)Arrangement is formed to be used for entering diffuser plate(1)Light carry out guide-lighting and scattering light conductor(6),
The light conductor(6)In diffuser plate(1)It is interior in around diffuser plate circular hole(2)Spiral distribution, or light conductor(6)In diffuser plate
(1)The circular distribution of the interior distribution that is parallel to each other in multiple.
10. the preparation method of LED panel lamp diffuser plate according to claim 1, it is characterized in that:The master substrate
(10)Including Sapphire Substrate or silicon substrate.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101281944A (en) * | 2008-04-30 | 2008-10-08 | 苏州纳米技术与纳米仿生研究所 | Method for construction of high power LED multilayer gradient material cooling channel |
CN102520591A (en) * | 2011-12-15 | 2012-06-27 | 东南大学 | Negative photoresist-based diffuser photo-etching process |
WO2013163933A1 (en) * | 2012-05-03 | 2013-11-07 | 博昱科技(丹阳)有限公司 | Light guide plate with concave microstructure and manufacturing method thereof |
EP2985643A1 (en) * | 2013-04-07 | 2016-02-17 | BOE Technology Group Co., Ltd. | Light guide plate and manufacturing method therefor, and display device comprising same |
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2015
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101281944A (en) * | 2008-04-30 | 2008-10-08 | 苏州纳米技术与纳米仿生研究所 | Method for construction of high power LED multilayer gradient material cooling channel |
CN102520591A (en) * | 2011-12-15 | 2012-06-27 | 东南大学 | Negative photoresist-based diffuser photo-etching process |
WO2013163933A1 (en) * | 2012-05-03 | 2013-11-07 | 博昱科技(丹阳)有限公司 | Light guide plate with concave microstructure and manufacturing method thereof |
EP2985643A1 (en) * | 2013-04-07 | 2016-02-17 | BOE Technology Group Co., Ltd. | Light guide plate and manufacturing method therefor, and display device comprising same |
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