CN105227149B - On-line NMR broadband RF signal power amplification circuit - Google Patents
On-line NMR broadband RF signal power amplification circuit Download PDFInfo
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- CN105227149B CN105227149B CN201510614339.5A CN201510614339A CN105227149B CN 105227149 B CN105227149 B CN 105227149B CN 201510614339 A CN201510614339 A CN 201510614339A CN 105227149 B CN105227149 B CN 105227149B
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- mosfet
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- frequency mosfet
- power amplification
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
- G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
- G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
- G01R33/36—Electrical details, e.g. matching or coupling of the coil to the receiver
- G01R33/3614—RF power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
Abstract
The embodiment of the present invention provides a kind of on-line NMR broadband RF signal power amplification circuit.The circuit includes：First order amplifying circuit, second level amplifying circuit, third level amplifying circuit, the first coupling transformer, the second coupling transformer, the 3rd coupling transformer, biasing circuit and control circuit；First order amplifying circuit is connected with second level amplifying circuit by the first coupling transformer；Second level amplifying circuit is connected with third level amplifying circuit by the second coupling transformer；The output end of third level amplifying circuit and power amplification circuit is connected by the 3rd coupling transformer；Biasing circuit is connected with control circuit, second level amplifying circuit and third level amplifying circuit respectively.The bias voltage that control circuit of the embodiment of the present invention passes through bias circuit controls radio frequency MOSFET, and then radio frequency MOSFET is controlled to be turned on and off, prevent the transmission signal in power amplification circuit from influenceing reception of the pre-amplification circuit to echo-signal, it is accurate to improve detection of the backscatter signal.
Description
Technical field
The present embodiments relate to petroleum detection field, more particularly to a kind of on-line NMR broadband RF signal power
Amplifying circuit.
Background technology
Nuclear magnetic resonance spectrometer is detected by power amplification circuit, pre-amplification circuit, signal acquisition processing circuit and sensor
Region is formed.When carrying out Nuclear Magnetic Resonance Measurement using nuclear magnetic resonance spectrometer, test sample is placed in sensor detection areas, work(
Pulse signal after amplification is input in sensor detection areas by rate amplifying circuit, the test in actuated sensor search coverage
Sample produces sample signal, and the sample signal is analyzed by data inversion.
Power amplification circuit is the important component of nuclear magnetic resonance spectrometer, and during Nuclear Magnetic Resonance Measurement it is main
Energy emitting element, it is desirable to provide the power output signal of constant gain, and being capable of pulse signals progress Linear Amplifer.It is existing
Power amplification circuit include three-stage amplifier, first order amplifying circuit is drive circuit, specifically chooses integrated amplifier；The
Second amplifying circuit includes two radio frequency metal-oxide semiconductor field-effect transistor (Metallic Oxide
Semiconductor Field Effect Transistor, abbreviation MOSFET)；Third level amplifying circuit includes two radio frequencies
MOSFET；By transformer coupled between first order amplifying circuit and second level amplifying circuit, second level amplifying circuit and the 3rd
By transformer coupled between level amplifying circuit；All radio frequency MOSFET bias voltage is provided by external circuitses.
Bias voltage is provided because external circuitses are continuously radio frequency MOSFET, radio frequency MOSFET is remained conducting shape
State, power amplification circuit persistently send transmission signal, because the echo signal amplitude that pre-amplification circuit receives is smaller, continue
Transmission signal influence echo-signal reception, cause detection of the backscatter signal not accurate.
The content of the invention
The embodiment of the present invention provides a kind of on-line NMR broadband RF signal power amplification circuit, to improve echo inspection
Survey precision.
The one side of the embodiment of the present invention is to provide a kind of on-line NMR broadband RF signal power amplification circuit,
Including：First order amplifying circuit, second level amplifying circuit, third level amplifying circuit, the first coupling transformer, the second coupling transformation
Device, the 3rd coupling transformer, biasing circuit and control circuit；Wherein,
The first order amplifying circuit includes radio frequency integrated amplifier, the input connection work(of the radio frequency integrated amplifier
The input of rate amplifying circuit；
The second level amplifying circuit includes the first radio frequency MOSFET and the second radio frequency MOSFET；
The third level amplifying circuit includes the 3rd radio frequency MOSFET and the 4th radio frequency MOSFET；
It is the first coupling transformer between the first order amplifying circuit and the second level amplifying circuit, first coupling
The primary for closing transformer connects the output end of the radio frequency integrated amplifier, the secondary both ends difference of first coupling transformer
Connect the grid of the first radio frequency MOSFET and the grid of the second radio frequency MOSFET；
It is the second coupling transformer between the second level amplifying circuit and the third level amplifying circuit, second coupling
The primary both ends for closing transformer connect the drain electrode of the first radio frequency MOSFET and the drain electrode of the second radio frequency MOSFET respectively,
The secondary both ends of second coupling transformer connect the grid of the 3rd radio frequency MOSFET and the 4th radio frequency respectively
MOSFET grid；
It is the 3rd coupling transformer between the third level amplifying circuit and the output end of the power amplification circuit, it is described
The primary both ends of 3rd coupling transformer connect the drain electrode of the 3rd radio frequency MOSFET and the 4th radio frequency MOSFET respectively
Drain electrode, the secondary of the 3rd coupling transformer connects the output end of the power amplification circuit；
The biasing circuit includes the first driver, the second driver, the 3rd driver, fourth drive, the first slip
Rheostat, the second slide rheostat, the 3rd slide rheostat and the 4th slide rheostat, the control circuit is respectively with described
One driver, second driver, the 3rd driver are connected with the input of the fourth drive, and described first drives
The output end for moving device, second driver, the 3rd driver and the fourth drive is slided with described first respectively
Rheostat, second slide rheostat, the 3rd slide rheostat connect with the fixing end of the 4th slide rheostat,
First slide rheostat, second slide rheostat, the 3rd slide rheostat and the 4th slide rheostat
Sliding end respectively with the first radio frequency MOSFET, the second radio frequency MOSFET, the 3rd radio frequency MOSFET and described
4th radio frequency MOSFET grid connection.
On-line NMR broadband RF signal power amplification circuit provided in an embodiment of the present invention, by biasing circuit with
Radio frequency MOSFET grid connection, control circuit are connected with biasing circuit in power amplification circuit, and control circuit passes through biased electrical
Road control radio frequency MOSFET bias voltage, and then control radio frequency MOSFET to be turned on and off, sending power amplification circuit
Radio frequency MOSFET is opened during transmission signal, and radio frequency MOSFET is closed at the end of transmission signal is sent, and is prevented in power amplification circuit
Transmission signal influence reception of the pre-amplification circuit to echo-signal, it is accurate to improve detection of the backscatter signal.
Brief description of the drawings
Fig. 1 is the circuit diagram of on-line NMR broadband RF signal power amplification circuit provided in an embodiment of the present invention；
Fig. 2 is the circuit diagram of driver provided in an embodiment of the present invention；
Fig. 3 is the circuit diagram of radio frequency integrated amplifier provided in an embodiment of the present invention；
Fig. 4 is another circuit diagram of radio frequency integrated amplifier provided in an embodiment of the present invention；
Fig. 5 is the oscillogram of control signal provided in an embodiment of the present invention and transmission signal；
Fig. 6 is the signal that the gain of power amplification circuit provided in an embodiment of the present invention changes with the frequency of transmission signal
Figure.
Embodiment
Fig. 1 is the circuit diagram of on-line NMR broadband RF signal power amplification circuit provided in an embodiment of the present invention.
The embodiment of the present invention is continuously radio frequency MOSFET for external circuitses and provides bias voltage, radio frequency MOSFET is remained conducting
State, there is provided on-line NMR broadband RF signal power amplification circuit, the on-line NMR broadband RF signal work(
Rate amplifying circuit includes first order amplifying circuit, second level amplifying circuit, third level amplifying circuit, the first coupling transformer, the
Two coupling transformers, the 3rd coupling transformer, biasing circuit and control circuit；As shown in figure 1, first order amplifying circuit includes penetrating
The input P2 of frequency integrated amplifier A1, radio frequency integrated amplifier A1 input connection power amplification circuit；Amplify the second level
Circuit includes the first radio frequency MOSFET A2 and the second radio frequency MOSFET A3；Third level amplifying circuit includes the 3rd radio frequency MOSFET
A4 and the 4th radio frequency MOSFET A5；It is the first coupling transformer T1 between first order amplifying circuit and second level amplifying circuit, the
One coupling transformer T1 primary connection radio frequency integrated amplifier A1 output end, the first coupling transformer T1 secondary both ends point
The first radio frequency MOSFET A2 grid and the second radio frequency MOSFET A3 grid are not connected；Second level amplifying circuit and described the
It is the second coupling transformer T2 between three-stage amplifier, the second coupling transformer T2 primary both ends connect the first radio frequency respectively
MOSFET A2 drain electrode and the second radio frequency MOSFET A3 drain electrode, the second coupling transformer T2 secondary both ends connect the respectively
Three radio frequency MOSFET A4 grid and the 4th radio frequency MOSFET A5 grid；Third level amplifying circuit and power amplification circuit
It is the 3rd coupling transformer T3 between output end P3, the 3rd coupling transformer T3 primary both ends connect the 3rd radio frequency respectively
MOSFET A4 drain electrode and the 4th radio frequency MOSFET A5 drain electrode, the 3rd coupling transformer T3 secondary connection power amplification electricity
The output end P3 on road；Biasing circuit include the first driver A6, the second driver A7, the 3rd driver A8, fourth drive A9,
First slide rheostat R1, the second slide rheostat R2, the 3rd slide rheostat R3 and the 4th slide rheostat R4, control circuit
The input with the first driver A6, the second driver A7, the 3rd driver A8 and fourth drive A9 is connected respectively, and first drives
Dynamic device A6, the second driver A7, the 3rd driver A8 and fourth drive A9 output end respectively with the first slide rheostat R1,
Second slide rheostat R2, the 3rd slide rheostat R3 and the 4th slide rheostat R4 fixing end connect, and first slides variable resistance
Device R1, the second slide rheostat R2, the 3rd slide rheostat R3 and the 4th slide rheostat R4 sliding end are penetrated with first respectively
Frequency MOSFET A2, the second radio frequency MOSFET A3, the 3rd radio frequency MOSFET A4 and the 4th radio frequency MOSFET A5 grid connection.
In embodiments of the present invention control circuit by control terminal P1 respectively with the first driver A6, the second driver A7,
3rd driver A8 is connected with fourth drive A9 input.
Radio frequency integrated amplifier A1 output end connects the first fixed value resistance R5, the first coupling transformer T1 primary both ends
Connect the first fixed value resistance R5 both ends.
The embodiment of the present invention is connected by biasing circuit with the grid of radio frequency MOSFET in power amplification circuit, control circuit
It is connected with biasing circuit, control circuit controls radio frequency by bias circuit controls radio frequency MOSFET bias voltage
MOSFET is turned on and off, and opens power amplification circuit radio frequency MOSFET when sending transmission signal, transmission signal sends knot
Radio frequency MOSFET is closed during beam, prevents the transmission signal in power amplification circuit from influenceing pre-amplification circuit and being connect to echo-signal
Receive, it is accurate to improve detection of the backscatter signal.
Fig. 2 is the circuit diagram of driver provided in an embodiment of the present invention；Fig. 3 is that radio frequency provided in an embodiment of the present invention integrates
The circuit diagram of amplifier；Fig. 4 is another circuit diagram of radio frequency integrated amplifier provided in an embodiment of the present invention.In above-described embodiment
On the basis of, the first coupling transformer T1 secondary both ends pass through the first electric capacity C1 and second electric capacity C2 the first radio frequencies of connection respectively
The grid of MOSFET A2 grid and the second radio frequency MOSFET A3；Second coupling transformer T2 secondary both ends pass through respectively
The grid of three electric capacity C3 and the radio frequency MOSFET A4 of the 4th electric capacity C4 connections the 3rd grid and the 4th radio frequency MOSFET A5.
As shown in Fig. 2 the first driver A6 in above-described embodiment include driving chip EL7202CS, driving resistance R6 and
Electric capacity C is driven, wherein, driving chip EL7202CS input is connected with control circuit by control terminal P1, driving chip
EL7202CS output end is connected with the first slide rheostat R1 fixing end, driving resistance R6 one end connection driving chip
EL7202CS input, driving resistance R6 other end ground connection, driving electric capacity C one end and driving chip EL7202CS electricity
Source pin connects, driving electric capacity C other end ground connection；Second driver A7, the 3rd driver A8 and fourth drive A9 and
One driver A6 structures are identical.
As shown in figure 3, radio frequency integrated amplifier A1 in above-described embodiment include radio frequency integrate amplification chip MAV-11SM,
Second fixed value resistance R7 and the 5th electric capacity C5, the input that radio frequency integrates amplification chip MAV-11SM connect the one of the 5th electric capacity C5
End, the 5th electric capacity C5 other end connect the input P2 and the second fixed value resistance R7 of power amplification circuit one end respectively, the
Two fixed value resistance R7 other end ground connection, radio frequency integrate the first fixed value resistance R5 of output end connection of amplification chip one end, the
Certain value resistance R5 other end ground connection.
As shown in figure 4, one end of the first fixed value resistance R5 ground connection is also connected with parallel circuit, parallel circuit includes the 6th electric capacity
C6, the 7th electric capacity C7, inductance L and the 3rd fixed value resistance R8, the 7th electric capacity C7 and inductance L series connection, the 6th electric capacity C6 is with connecting
7th electric capacity C7 and inductance L is in parallel, and the 3rd fixed value resistance R8 is in parallel with the 7th electric capacity C7.
In embodiments of the present invention, the transmission signal power bracket of input P2 inputs is within 13dbm, the first definite value electricity
It is 50 ohm to hinder R5, the second fixed value resistance R7, the 3rd fixed value resistance R8 resistance.
The embodiment of the present invention connects electric capacity by radio frequency MOSFET grid, ensure that radio frequency MOSFET has the inclined of stabilization
Voltage is put, and provides the concrete structure of driver and radio frequency integrated amplifier.
Fig. 5 is the oscillogram of control signal provided in an embodiment of the present invention and transmission signal.On the basis of above-described embodiment
On, control circuit output control signal, control signal be used for control the first radio frequency MOSFET A2, the second radio frequency MOSFET A3,
3rd radio frequency MOSFET A4 and the 4th radio frequency MOSFET A5 are turned on and off.
As shown in figure 5, control signal K1 is pulse signal, and when pulse signal K1 is high level, the first radio frequency MOSFET
A2, the second radio frequency MOSFET A3, the 3rd radio frequency MOSFET A4 and the 4th radio frequency MOSFET A5 are opened, when pulse signal K1 is
During low level, the first radio frequency MOSFET A2, the second radio frequency MOSFET A3, the 3rd radio frequency MOSFET A4 and the 4th radio frequency
MOSFET A5 are closed.
As shown in figure 1, control circuit inputs control signal K1 by control terminal P1, when pulse signal K1 is high level, the
One driver A6, the second driver A7, the 3rd driver A8 and fourth drive A9 output currents, the electric current flow through the first slip
After rheostat R1, the second slide rheostat R2, the 3rd slide rheostat R3 and the 4th slide rheostat R4, the first slide rheostat
R1, the second slide rheostat R2, the 3rd slide rheostat R3 and the 4th slide rheostat R4 carry out partial pressure to the electric current, and first penetrates
Frequency MOSFET A2, the second radio frequency MOSFET A3, the 3rd radio frequency MOSFET A4 and the 4th radio frequency MOSFET A5 produce biased electrical
Pressure, makes the first radio frequency MOSFET A2, the second radio frequency MOSFET A3, the 3rd radio frequency MOSFET A4 and the 4th radio frequency MOSFET A5
Conducting is opened.When pulse signal K1 is low level, the first driver A6, the second driver A7, the 3rd driver A8 and the 4th
Driver A9 not slide by output current, the first slide rheostat R1, the second slide rheostat R2, the 3rd slide rheostat R3 and the 4th
Dynamic rheostat R4 does not have a partial pressure, the first radio frequency MOSFET A2, the second radio frequency MOSFET A3, the 3rd radio frequency MOSFET A4 and the
Four radio frequency MOSFET A5 grid and source electrode is grounded simultaneously, i.e. the first radio frequency MOSFET A2, the second radio frequency MOSFET A3,
Three radio frequency MOSFET A4 and the 4th radio frequency MOSFET A5 do not have bias voltage, the first radio frequency MOSFET A2, the second radio frequency
MOSFET A3, the 3rd radio frequency MOSFET A4 and the 4th radio frequency MOSFET A5 are closed.
As shown in figure 5, pulse signal K1 rising edge time goes out current moment early predetermined time interval than transmission signal K2
Tr, pulse signal K1 trailing edge moment and transmission signal K2 finish time are synchronization, and transmission signal K2 is put by power
The input P2 outputs of big circuit.
In the embodiment of the present invention, TrBetween 50ns to 100ns.
The embodiment of the present invention is that high level controls radio frequency MOSFET to open by pulse signal, and pulse signal is low level control
Radio frequency MOSFET processed is closed, and transmission signal only occurs in pulse signal high level, ensures transmission signal transmission interval internal power
Amplifying circuit disconnects, and prevents the transmission signal in power amplification circuit from influenceing reception of the pre-amplification circuit to echo-signal, carries
High detection of the backscatter signal is accurate.
Fig. 6 is the signal that the gain of power amplification circuit provided in an embodiment of the present invention changes with the frequency of transmission signal
Figure.The power amplification circuit of the embodiment of the present invention is using the circuit diagram shown in Fig. 1, as shown in fig. 6, the gain of power amplification circuit
Stablize in 50dB or so, produce larger fluctuation not with the increase of emission signal frequency, illustrate provided in an embodiment of the present invention
On-line NMR broadband RF signal power amplification circuit passes through control on the basis of power amplification circuit gain stabilization is ensured
Radio frequency MOSFET processed is turned on and off to realize the break-make of power amplification circuit.
In summary, the embodiment of the present invention is connected by the grid of radio frequency MOSFET in biasing circuit and power amplification circuit
Connect, control circuit is connected with biasing circuit, and control circuit is controlled by bias circuit controls radio frequency MOSFET bias voltage
Radio frequency MOSFET processed is turned on and off, and opens power amplification circuit radio frequency MOSFET when sending transmission signal, transmission signal
Radio frequency MOSFET is closed at the end of transmission, prevents the transmission signal in power amplification circuit from influenceing pre-amplification circuit and believing echo
Number reception, it is accurate to improve detection of the backscatter signal；Electric capacity is connected by radio frequency MOSFET grid, ensure that radio frequency MOSFET
With stable bias voltage, and provide the concrete structure of driver and radio frequency integrated amplifier；It is height by pulse signal
Automatic level control radio frequency MOSFET is opened, and pulse signal is closed for low level control radio frequency MOSFET, and transmission signal is only believed in pulse
Occur during number high level, ensure that transmission signal transmission interval internal power amplifying circuit disconnects, prevent the hair in power amplification circuit
Reception of the effect of signals pre-amplification circuit to echo-signal is penetrated, it is accurate to improve detection of the backscatter signal.
In several embodiments provided by the present invention, it should be understood that disclosed apparatus and method, it can be passed through
Its mode is realized.For example, device embodiment described above is only schematical, for example, the division of the unit, only
Only a kind of division of logic function, there can be other dividing mode when actually realizing, such as multiple units or component can be tied
Another system is closed or is desirably integrated into, or some features can be ignored, or do not perform.It is another, it is shown or discussed
Mutual coupling or direct-coupling or communication connection can be the INDIRECT COUPLINGs or logical by some interfaces, device or unit
Letter connection, can be electrical, mechanical or other forms.
The unit illustrated as separating component can be or may not be physically separate, show as unit
The part shown can be or may not be physical location, you can with positioned at a place, or can also be distributed to multiple
On NE.Some or all of unit therein can be selected to realize the mesh of this embodiment scheme according to the actual needs
's.
In addition, each functional unit in each embodiment of the present invention can be integrated in a processing unit, can also
That unit is individually physically present, can also two or more units it is integrated in a unit.Above-mentioned integrated list
Member can both be realized in the form of hardware, can also be realized in the form of hardware adds SFU software functional unit.
The above-mentioned integrated unit realized in the form of SFU software functional unit, can be stored in one and computer-readable deposit
In storage media.Above-mentioned SFU software functional unit is stored in a storage medium, including some instructions are causing a computer
It is each that equipment (can be personal computer, server, or network equipment etc.) or processor (processor) perform the present invention
The part steps of embodiment methods described.And foregoing storage medium includes：USB flash disk, mobile hard disk, read-only storage (Read-
Only Memory, ROM), random access memory (Random Access Memory, RAM), magnetic disc or CD etc. it is various
Can be with the medium of store program codes.
Those skilled in the art can be understood that, for convenience and simplicity of description, only with above-mentioned each functional module
Division progress for example, in practical application, can be complete by different functional modules by above-mentioned function distribution as needed
Into the internal structure of device being divided into different functional modules, to complete all or part of function described above.On
The specific work process of the device of description is stated, the corresponding process in preceding method embodiment is may be referred to, will not be repeated here.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (7)
- A kind of 1. on-line NMR broadband RF signal power amplification circuit, it is characterised in that including：First order amplification electricity Road, second level amplifying circuit, third level amplifying circuit, the first coupling transformer, the second coupling transformer, the 3rd coupling transformation Device, biasing circuit and control circuit；Wherein,The first order amplifying circuit includes radio frequency integrated amplifier, and the input connection power of the radio frequency integrated amplifier is put The input of big circuit；The second level amplifying circuit includes the first radio frequency MOSFET and the second radio frequency MOSFET；The third level amplifying circuit includes the 3rd radio frequency MOSFET and the 4th radio frequency MOSFET；It is the first coupling transformer between the first order amplifying circuit and the second level amplifying circuit, first coupling becomes The primary of depressor connects the output end of the radio frequency integrated amplifier, and the secondary both ends of first coupling transformer connect respectively The grid of the grid of the first radio frequency MOSFET and the second radio frequency MOSFET；It is the second coupling transformer between the second level amplifying circuit and the third level amplifying circuit, second coupling becomes The primary both ends of depressor connect the drain electrode of the first radio frequency MOSFET and the drain electrode of the second radio frequency MOSFET respectively, described The secondary both ends of second coupling transformer connect the grid of the 3rd radio frequency MOSFET and the 4th radio frequency MOSFET respectively Grid；It is the 3rd coupling transformer between the third level amplifying circuit and the output end of the power amplification circuit, the described 3rd The primary both ends of coupling transformer connect the drain electrode of the 3rd radio frequency MOSFET and the leakage of the 4th radio frequency MOSFET respectively Pole, the secondary of the 3rd coupling transformer connect the output end of the power amplification circuit；The biasing circuit includes the first driver, the second driver, the 3rd driver, fourth drive, the first slip variable resistance Device, the second slide rheostat, the 3rd slide rheostat and the 4th slide rheostat, the control circuit are driven with described first respectively Dynamic device, second driver, the 3rd driver are connected with the input of the fourth drive, first driving Device, second driver, the output end of the 3rd driver and the fourth drive are slided with described first become respectively Resistance device, second slide rheostat, the 3rd slide rheostat connect with the fixing end of the 4th slide rheostat, institute State the first slide rheostat, second slide rheostat, the 3rd slide rheostat and the 4th slide rheostat Sliding end respectively with the first radio frequency MOSFET, the second radio frequency MOSFET, the 3rd radio frequency MOSFET and described Four radio frequency MOSFET grid connection；Wherein, the radio frequency integrated amplifier includes radio frequency integrated amplification chip, the second fixed value resistance and the 5th electric capacity, described to penetrate The input of the integrated amplification chip of frequency connects one end of the 5th electric capacity, and the other end of the 5th electric capacity connects described respectively One end of the input of power amplification circuit and second fixed value resistance, the other end ground connection of second fixed value resistance, institute State one end that radio frequency integrates output end the first fixed value resistance of connection of amplification chip, another termination of first fixed value resistance Ground；One end of the first fixed value resistance ground connection is also connected with parallel circuit, and the parallel circuit includes the 6th electric capacity, the 7th electricity Hold, inductance and the 3rd fixed value resistance, one end of first fixed value resistance connects the 6th electric capacity, the 7th electric capacity, the 3rd fixed respectively It is worth one end of resistance, the other end of the 6th electric capacity connects one end of power end and inductance, the other end of the inductance respectively The 7th electric capacity, the other end of the 3rd fixed value resistance are connected respectively.
- 2. on-line NMR broadband RF signal power amplification circuit according to claim 1, it is characterised in that described The output end of radio frequency integrated amplifier connects the first fixed value resistance, the primary both ends connection of first coupling transformer described the The both ends of certain value resistance.
- 3. on-line NMR broadband RF signal power amplification circuit according to claim 2, it is characterised in that described The secondary both ends of first coupling transformer pass through the grid of the first radio frequency MOSFET described in the first electric capacity and the second capacitance connection respectively Pole and the grid of the second radio frequency MOSFET；The secondary both ends of second coupling transformer pass through the 3rd radio frequency described in the 3rd electric capacity and the 4th capacitance connection respectively The grid of MOSFET grid and the 4th radio frequency MOSFET.
- 4. on-line NMR broadband RF signal power amplification circuit according to claim 3, it is characterised in that described First driver includes driving chip, driving resistance and driving electric capacity, wherein, the input of the driving chip and the control Circuit is connected, and the output end of the driving chip is connected with the fixing end of first slide rheostat, the driving resistance One end connects the input of the driving chip, the other end ground connection of the driving resistance, one end of the driving electric capacity and institute State the power pins connection of driving chip, the other end ground connection of the driving electric capacity；Second driver, the 3rd driver and the fourth drive are identical with first activation configuration.
- 5. the on-line NMR broadband RF signal power amplification circuit according to claim any one of 1-4, its feature It is, the control circuit output control signal, the control signal is used to control the first radio frequency MOSFET, described second Radio frequency MOSFET, the 3rd radio frequency MOSFET and the 4th radio frequency MOSFET are turned on and off.
- 6. on-line NMR broadband RF signal power amplification circuit according to claim 5, it is characterised in that described Control signal is pulse signal, when the pulse signal is high level, the first radio frequency MOSFET, second radio frequency MOSFET, the 3rd radio frequency MOSFET and the 4th radio frequency MOSFET are opened, when the pulse signal is low level, institute The first radio frequency MOSFET, the second radio frequency MOSFET, the 3rd radio frequency MOSFET and the 4th radio frequency MOSFET is stated to close Close.
- 7. on-line NMR broadband RF signal power amplification circuit according to claim 6, it is characterised in that described The rising edge time of pulse signal goes out current moment early predetermined time interval than transmission signal, during the trailing edge of the pulse signal It is synchronization to carve with the finish time of the transmission signal, and the transmission signal is defeated by the input of the power amplification circuit Go out.
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