CN205844471U - A kind of superfrequency detection circuit for partial discharge - Google Patents
A kind of superfrequency detection circuit for partial discharge Download PDFInfo
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- CN205844471U CN205844471U CN201620522770.7U CN201620522770U CN205844471U CN 205844471 U CN205844471 U CN 205844471U CN 201620522770 U CN201620522770 U CN 201620522770U CN 205844471 U CN205844471 U CN 205844471U
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- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 230000004044 response Effects 0.000 claims abstract description 15
- 230000003412 degenerative effect Effects 0.000 claims abstract description 14
- 210000000056 organ Anatomy 0.000 claims abstract description 14
- 230000003068 static effect Effects 0.000 claims abstract description 14
- 230000007423 decrease Effects 0.000 claims abstract description 8
- 230000005669 field effect Effects 0.000 claims description 81
- 230000000694 effects Effects 0.000 claims description 5
- 238000005259 measurement Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007621 cluster analysis Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 235000019988 mead Nutrition 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Abstract
The utility model discloses a kind of superfrequency detection circuit for partial discharge, belong to superfrequency Partial Discharge Detection field, it includes acquisition terminal MCU and the superfrequency Partial discharge signal modulate circuit communicated with acquisition terminal MCU；Described superfrequency Partial discharge signal modulate circuit includes that UHF-antenna, exponential fade decline band static organ, the degenerative balanced amplifier of frequency response and comparison circuit；Described UHF-antenna accesses exponential fade and declines band static organ, and the decline output of band static organ of described exponential fade accesses comparison circuit through the degenerative balanced amplifier of frequency response, and the output of described comparison circuit accesses acquisition terminal MCU.This utility model simple in construction, easy to use, safe and reliable, it is possible to greatly to eliminate the interference signal impact on detected value, detection particularly with 650MHz 1920MHz partial-discharge ultrahigh-frequency signal can be obviously improved the accuracy of measurement, it is possible to accurately detects ultrahigh frequency partial discharge signal.
Description
Technical field
This utility model relates to a kind of superfrequency detection circuit for partial discharge, belongs to superfrequency Partial Discharge Detection field.
Background technology
In Electric Power Equipment Insulation body, dielectric strength and disruptive field intensity are the highest, when shelf depreciation occurs in the least scope
Time, breakdown process quickly, will produce the steepest pulse current, and its rise time is less than 1ns, and stimulating frequency up to counts GHz's
Electromagnetic wave.Superfrequency Partial Discharge Detection (Ultra-High-Frequency, be called for short UHF) method in phase early 1980s by
Central power office of Britain (CEGB) laboratory proposes, and its ultimate principle is to be put local in power equipment by superfrequency sensor
Superfrequency electromagnetism (300MHz≤f≤3GHz) signal produced during electricity detects, thus obtains the relevant information of shelf depreciation,
Realize partial discharge monitoring.Owing to on-the-spot dizzy interference is concentrated mainly on below 300MHz frequency range, therefore superfrequency method can be effective
Avoid the interference such as corona at scene, there is higher sensitivity and capacity of resisting disturbance, shelf depreciation live detection, fixed can be realized
The advantages such as position and Classifcation of flaws.
At present, in prior art there is a lot of significantly shortcoming, such as structure complexity in superfrequency detection circuit for partial discharge,
Needing to gather without distortions useful signal, data volume is very big, and data intractability is the highest, and Long Distant Transmit ultrahigh-frequency signal,
Accuracy and the reliability of measurement all can be had a huge impact by its time delay and signal deformity.
Utility model content
Technical problem to be solved in the utility model there is provided one and designs simple, safety and stability, and can be accurate
The superfrequency detection circuit for partial discharge of detection ultrahigh frequency partial discharge signal.
The technical scheme that this utility model is used is as follows:
A kind of superfrequency detection circuit for partial discharge, it includes acquisition terminal MCU and the spy communicated with acquisition terminal MCU
High frequency Partial discharge signal modulate circuit；Described superfrequency Partial discharge signal modulate circuit includes that UHF-antenna, exponential fade decline band
The degenerative balanced amplifier of static organ, frequency response and comparison circuit；Described UHF-antenna accesses exponential fade and declines band
Static organ, described exponential fade decline band static organ output through the degenerative balanced amplifier of frequency response access more electric
Road, the output of described comparison circuit accesses acquisition terminal MCU.
Further, described comparison circuit includes field-effect transistor Q11-field-effect transistor Q19, resistance R10, electric capacity
C10 and diode D12；The source electrode of described field-effect transistor Q11 is connected with the source electrode of field-effect transistor Q12, and described field is imitated
Answering the source electrode of transistor Q13 to be connected with the source electrode of field-effect transistor Q14, the drain electrode of described field-effect transistor Q11 connects respectively
Connect source electrode and the source electrode of described field-effect transistor Q14 of field-effect transistor Q13, the grid of described field-effect transistor Q15
Connecting the grid of field-effect transistor Q16, the drain electrode of described field-effect transistor Q15 connects the drain electrode of field-effect transistor Q13,
And the grid of described field-effect transistor Q15 connects its drain electrode, the source ground of described field-effect transistor Q15, described field effect
The drain electrode of transistor Q16 connects the drain electrode of field-effect transistor Q14, the source ground of described field-effect transistor Q16, described field
The grid of effect transistor Q19 connects the drain electrode of field-effect transistor Q14, and the grid of described field-effect transistor Q19 connects respectively
Connect drain electrode and the drain electrode of field-effect transistor Q16 of field-effect transistor Q18, the source ground of described field-effect transistor Q19,
The grid of described field-effect transistor Q17 connects drain electrode and the leakage of field-effect transistor Q19 of field-effect transistor Q12 respectively
Pole, the source ground of described field-effect transistor Q17, the drain electrode of described field-effect transistor Q12 is successively through electric capacity C10 and resistance
R10 ground connection, described diode D12 electric capacity C10 after concatenation in parallel and resistance R10 two ends, the negative pole of described diode D12 connects
The drain electrode of field-effect transistor Q12.
Further, this utility model also includes wideband pulses of current sensor and noise transducer, described wideband pulse
Current sensor is installed on power equipment earth lead, and described wideband pulses of current sensor and noise transducer all access collection
Terminal MCU.
Further, described UHF-antenna is plane equiangular spiral antenna or the A Ji working in 650MHz-1920MHz
Mead flat helical antenna.
Further, the degenerative described balanced amplifier of frequency response introduces negative feedback by resistance R10 and will balance
The signal of amplifier output port is coupled back its input port and reverse with its input signal superposes.
Further, the band connection frequency of the degenerative described balanced amplifier of frequency response is 650MHz-1920MHz.
Further, described acquisition terminal MCU gathers the local discharge signal of at least one power frequency period every time.
The beneficial effects of the utility model are as follows: circuit structure of the present utility model is simple, easy to use, safe and reliable,
This circuit can greatly eliminate the interference signal impact on detected value, extra-high particularly with 650MHz-1920MHz shelf depreciation
Frequently the detection of signal can be obviously improved the accuracy of measurement, it is possible to accurately detects ultrahigh frequency partial discharge signal.
UHF-antenna connects has exponential fade to decline band static organ, and it can strengthen energy laser propagation effect, exponential fade
The band static organ that declines connects the degenerative balanced amplifier of frequency response so that amplifying circuit is stable, and the flatness of gain is relatively
Good.The signal that balanced amplifier outputs it port by resistance introducing negative feedback is coupled back input port and inputs letter with it
Number reverse superposition, offsets part input signal and i.e. can obtain smooth gain response, can extend frequency range well.Gather eventually
End MCU ensures to gather the local discharge signal of at least one power frequency period every time, for realizing the conditioning to ultrahigh-frequency signal, adopting
Collection and storage control, and carry out signal processing of partial discharge, computing and characteristic parameter extraction, are responsible for and upper machine communication, for entering one
The pattern recognition drawn game of step is put point location and is prepared.
Accompanying drawing explanation
Fig. 1 is structural principle block diagram of the present utility model.
Fig. 2 is the circuit theory diagrams of comparison circuit in embodiment.
Detailed description of the invention
Below in conjunction with Fig. 1-Fig. 2 and embodiment, this utility model is further described.
As Figure 1-Figure 2, the present embodiment includes acquisition terminal MCU and the superfrequency office communicated with acquisition terminal MCU
Discharge signal modulate circuit；Described superfrequency Partial discharge signal modulate circuit include UHF-antenna, exponential fade decline band static organ,
The degenerative balanced amplifier of frequency response and comparison circuit；Described UHF-antenna accesses exponential fade and declines band static organ,
Described exponential fade decline band static organ output through the degenerative balanced amplifier of frequency response access comparison circuit, described ratio
The output of relatively circuit accesses acquisition terminal MCU.
Further, described comparison circuit includes field-effect transistor Q11-field-effect transistor Q19, resistance R10, electric capacity
C10 and diode D12；The source electrode of described field-effect transistor Q11 is connected with the source electrode of field-effect transistor Q12, and described field is imitated
Answering the source electrode of transistor Q13 to be connected with the source electrode of field-effect transistor Q14, the drain electrode of described field-effect transistor Q11 connects respectively
Connect source electrode and the source electrode of described field-effect transistor Q14 of field-effect transistor Q13, the grid of described field-effect transistor Q15
Connecting the grid of field-effect transistor Q16, the drain electrode of described field-effect transistor Q15 connects the drain electrode of field-effect transistor Q13,
And the grid of described field-effect transistor Q15 connects its drain electrode, the source ground of described field-effect transistor Q15, described field effect
The drain electrode of transistor Q16 connects the drain electrode of field-effect transistor Q14, the source ground of described field-effect transistor Q16, described field
The grid of effect transistor Q19 connects the drain electrode of field-effect transistor Q14, and the grid of described field-effect transistor Q19 connects respectively
Connect drain electrode and the drain electrode of field-effect transistor Q16 of field-effect transistor Q18, the source ground of described field-effect transistor Q19,
The grid of described field-effect transistor Q17 connects drain electrode and the leakage of field-effect transistor Q19 of field-effect transistor Q12 respectively
Pole, the source ground of described field-effect transistor Q17, the drain electrode of described field-effect transistor Q12 is successively through electric capacity C10 and resistance
R10 ground connection, described diode D12 electric capacity C10 after concatenation in parallel and resistance R10 two ends, the negative pole of described diode D12 connects
The drain electrode of field-effect transistor Q12.
Preferably, the present embodiment also includes wideband pulses of current sensor and noise transducer, described wideband pulse current
Sensor card is loaded on power equipment earth lead, and described wideband pulses of current sensor and noise transducer all access acquisition terminal
MCU。
Preferably, described UHF-antenna is plane equiangular spiral antenna or the A Ji meter working in 650MHz-1920MHz
Moral flat helical antenna.
Preferably, the degenerative described balanced amplifier of frequency response introduces negative feedback by resistance R10 and balance is put
The signal of big device output port is coupled back its input port and reverse with its input signal superposes.
Preferably, the band connection frequency of the degenerative described balanced amplifier of frequency response is 650MHz-1920MHz.
Preferably, described acquisition terminal MCU gathers the local discharge signal of at least one power frequency period every time.
Preferably, Partial Discharge in Power Transformer signal is high-frequency pulse signal, and signal from Partial Discharge Sources along transformation
Device winding can produce the biggest decay and vibration during traveling to superfrequency sensor, superfrequency component is concentrated mainly on letter
Number wave head part, general persistence is that tens nanoseconds are to hundreds of nanosecond.Superfrequency Partial discharge signal modulate circuit uses can be real
The superfrequency sensor of the partial-discharge ultrahigh-frequency signal detection of existing bandwidth 650MHz 1920MHz, has good frequency and rings
Answer characteristic.
Preferably, superfrequency sensor uses wideband pulses of current sensor, is installed on equipment ground line, described electric current
The sensor travelling wave current signal that coupling electrical power device interior shelf depreciation produces from earth lead；Described noise transducer couples
The interference signal of all kinds of UHF in space.
Preferably, the signal of described current sensor coupling is fed to acquisition terminal MCU through high-frequency low-consumption coaxial cable, enters
The AD conversion of row signal, collection；The space UHF signal of described noise transducer coupling is connected to acquisition terminal by RF coaxial cable
Signal conditioner within MCU, carries out the conditionings such as signal filtering, amplification, detection.
Preferably, the signal transmission after detection carries out AD conversion, collection, through digitized sampling to acquisition terminal MCU
Initial data is uploaded to host computer by USB interface, and host computer is provided with special Analysis of Partial Discharge and processes software, to gathering eventually
The data that end is uploaded are further processed, and mainly include that signal phase, peak value statistics, cluster analysis, anti-interference electric discharge spectrum carry
Take and generate.
Preferably, the present embodiment also includes frequency mixer, utilizes frequency mixer that it is carried out mixing and filtering, is not changing anti-telecommunications
Realizing down conversion under number characteristic condition, to use the A/D converter of relatively low sampling rate by after its digitized, analyzing and processing carries
Pick and place signal of telecommunication relevant feature parameters.
Last it is noted that above example is only in order to illustrate the technical solution of the utility model, it is not intended to limit；
Although this utility model being described in detail with reference to previous embodiment, it will be understood by those within the art that:
Technical scheme described in previous embodiment still can be modified by it, or is equal to wherein portion of techniques feature
Replace；And these amendments or replacement, do not make the essence of appropriate technical solution depart from this utility model embodiment technical scheme
Spirit and scope.
Claims (7)
1. a superfrequency detection circuit for partial discharge, it is characterised in that: it include acquisition terminal MCU and with acquisition terminal MCU
The superfrequency Partial discharge signal modulate circuit communicated；Described superfrequency Partial discharge signal modulate circuit includes UHF-antenna, index
Gradual change type micro-strip static organ, the degenerative balanced amplifier of frequency response and comparison circuit；Described UHF-antenna accesses index
Gradual change type micro-strip static organ, the decline output of band static organ of described exponential fade connects through the degenerative balanced amplifier of frequency response
Entering comparison circuit, the output of described comparison circuit accesses acquisition terminal MCU.
A kind of superfrequency detection circuit for partial discharge the most according to claim 1, it is characterised in that: described comparison circuit bag
Include field-effect transistor Q11-field-effect transistor Q19, resistance R10, electric capacity C10 and diode D12；Described field-effect transistor
The source electrode of Q11 is connected with the source electrode of field-effect transistor Q12, the source electrode of described field-effect transistor Q13 and field-effect transistor
The source electrode of Q14 connects, and the drain electrode of described field-effect transistor Q11 connects the source electrode of field-effect transistor Q13 and described field respectively
The source electrode of effect transistor Q14, the grid of described field-effect transistor Q15 connects the grid of field-effect transistor Q16, described field
The drain electrode of effect transistor Q15 connects the drain electrode of field-effect transistor Q13, and the grid of described field-effect transistor Q15 connects it
Drain electrode, the source ground of described field-effect transistor Q15, the drain electrode of described field-effect transistor Q16 connects field-effect transistor
The drain electrode of Q14, the source ground of described field-effect transistor Q16, it is brilliant that the grid of described field-effect transistor Q19 connects field effect
The drain electrode of body pipe Q14, the grid of described field-effect transistor Q19 connects drain electrode and the field effect of field-effect transistor Q18 respectively
The drain electrode of transistor Q16, the source ground of described field-effect transistor Q19, the grid of described field-effect transistor Q17 connects respectively
Connect drain electrode and the drain electrode of field-effect transistor Q19 of field-effect transistor Q12, the source ground of described field-effect transistor Q17,
The drain electrode of described field-effect transistor Q12 is successively through electric capacity C10 and resistance R10 ground connection, and described diode D12 parallel connection is after concatenation
Electric capacity C10 and resistance R10 two ends, the negative pole of described diode D12 connects the drain electrode of field-effect transistor Q12.
3. according to the arbitrary described a kind of superfrequency detection circuit for partial discharge of claim 1 or 2, it is characterised in that: it also wraps
Including wideband pulses of current sensor and noise transducer, described wideband pulses of current sensor is installed in power equipment earth lead
On, described wideband pulses of current sensor and noise transducer all access acquisition terminal MCU.
4. according to the arbitrary described a kind of superfrequency detection circuit for partial discharge of claim 1 or 2, it is characterised in that: described spy
High frequency antenna is plane equiangular spiral antenna or the archimedean plannar spiral antenna working in 650MHz-1920MHz.
A kind of superfrequency detection circuit for partial discharge the most according to claim 2, it is characterised in that: frequency response negative feedback
Described balanced amplifier introduce negative feedback by resistance R10 and that the signal of balanced amplifier output port is coupled back it is defeated
Inbound port also reverse with its input signal superposes.
6. according to the arbitrary described a kind of superfrequency detection circuit for partial discharge of claim 1 or 2, it is characterised in that: frequency is rung
The band connection frequency answering degenerative described balanced amplifier is 650MHz-1920MHz.
7. according to the arbitrary described a kind of superfrequency detection circuit for partial discharge of claim 1 or 2, it is characterised in that adopt described in:
Collection terminal MCU gathers the local discharge signal of at least one power frequency period every time.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620522770.7U CN205844471U (en) | 2016-06-01 | 2016-06-01 | A kind of superfrequency detection circuit for partial discharge |
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| CN201620522770.7U CN205844471U (en) | 2016-06-01 | 2016-06-01 | A kind of superfrequency detection circuit for partial discharge |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105929315A (en) * | 2016-06-01 | 2016-09-07 | 国网河北省电力公司电力科学研究院 | Ultrahigh frequency partial discharge detection circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105929315A (en) * | 2016-06-01 | 2016-09-07 | 国网河北省电力公司电力科学研究院 | Ultrahigh frequency partial discharge detection circuit |
| CN105929315B (en) * | 2016-06-01 | 2019-03-22 | 国网河北省电力公司电力科学研究院 | A kind of superfrequency detection circuit for partial discharge |
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