CN105226151A - Light-emitting diode assembly and forming method thereof - Google Patents
Light-emitting diode assembly and forming method thereof Download PDFInfo
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- CN105226151A CN105226151A CN201510639810.6A CN201510639810A CN105226151A CN 105226151 A CN105226151 A CN 105226151A CN 201510639810 A CN201510639810 A CN 201510639810A CN 105226151 A CN105226151 A CN 105226151A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a kind of light-emitting diode assembly and forming method thereof, this device comprises: a substrate; One light emitting diode construction, is formed on the substrate, this light emitting diode construction have one below LED layers, LED layers above an active layer and one first; And multiple embedded components, this LED layers above first at least extending through this light emitting diode construction of part, described multiple embedded components is watched by top and is different from this LED layers above first by this light emitting diode construction institute around the refraction coefficient of, described multiple embedded components.The present invention effectively can promote the optical efficiency of light-emitting diode.
Description
The application is the priority date submitted on November 02nd, 2009 to be the application number of on 08 25th, 2009 be 200910209233.1 name be called the divisional application of the application for a patent for invention of " light-emitting diode assembly and forming method thereof ".
Technical field
The present invention relates to semiconductor device, particularly crystallization iii-v light-emitting diode.
Background technology
Generally speaking, light-emitting diode (light-emittingdiode; LED) be made up of the second conductive layer of the first conductive layer of the first conductivity type, active layer and the second conductivity type, and can light be produced under positive bias (forward-biased).The light-emitting diode of different colours can use the material of different energy gap (bandgap) to be formed.Typical active layer can penetrate light from the both sides of luminescent layer, and light can be propagated toward all directions.But, owing to toward in the light of all directions injection from both sides, having luminous energy partly and being lost, therefore in the application of reality, often only need light from single side and penetrate along specific direction.
At a kind of light that promotes from the method for the shot of the single side of light-emitting diode assembly, be form reflector between substrate and light emitting diode construction.Reflector comprises metallic reflective material, and it can make to return light-emitting area to light-emitting diode from the light reflection of the light-emitting diode assembly injection substrate-side, promotes the optical efficiency (lightefficiency) of light-emitting diode assembly whereby.
Although reflective metal layer can help light from the single side injection of light-emitting diode assembly, but the light of injection generally still can be propagated towards all directions of the scope more than 180 °.The light propagated toward all directions is in some application needing light to penetrate along specific direction, and such as set of lenses or similar device are less desirable.
In the method for the light output variable of another kind strengthening light-emitting diode assembly, be by light-emitting area roughening.The light-emitting diode assembly with smooth surface has the total internal reflection of higher degree (totalinternalreflection), and wherein light can be inclined to and be reflected back active layer, instead of is penetrated.In order to reduce the degree of total internal reflection, can by the surface roughening of light-emitting diode assembly.Surface roughness is generally when forming light-emitting diode assembly, by metal organic chemical vapor deposition technology controlling and process, or after formation light-emitting diode assembly, is controlled by etch process.Although surface roughening can promote the output variable of light, but good ohmic contact degree of having any problem to be formed on a rough surface.
The method of the light output variable of another kind of strengthening light-emitting diode assembly comprises formation nano-pillar again.In this method, light-emitting diode assembly comprises many from the nanoscale Column being luminous of substrate vertically towards upper extension.But, due to most of light that nano-pillar produces, can be incident on the sidewall of nano-pillar with the angle being greater than critical angle, therefore still can reduce due to the factor of total internal reflection from the light of nano-pillar structure output.
According to above-mentioned, therefore there is the light-emitting diode assembly needing optical efficiency to promote.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of light-emitting diode assembly, comprising: a substrate; One light emitting diode construction, is formed on the substrate, this light emitting diode construction have one below LED layers, LED layers above an active layer and one first; And multiple embedded components, this LED layers above first at least extending through this light emitting diode construction of part, described multiple embedded components is watched by top and is different from this LED layers above first by this light emitting diode construction institute around the refraction coefficient of, described multiple embedded components.
The present invention also provides a kind of light-emitting diode assembly, comprising: a substrate; And a light emitting diode construction, be positioned on this substrate, this light emitting diode construction has the multiple embedded components being at least arranged in one first conductive layer, and the refraction coefficient of described multiple embedded components is different from a film of this light emitting diode construction embedding described multiple embedded components.
The present invention also provides a kind of method forming light-emitting diode assembly, and the method comprises: provide a substrate; Form a light emitting diode construction on the substrate, this light emitting diode construction comprise one below LED layers, LED layers above an active layer and one first; And form multiple embedded components, its by top watch by this light emitting diode construction around, the refraction coefficient of described multiple embedded components is different from this light emitting diode construction.
The present invention effectively can promote the optical efficiency of light-emitting diode.
Accompanying drawing explanation
Fig. 1 to Fig. 4 shows the various processing steps that one embodiment of the invention forms light-emitting diode assembly.
Fig. 5 and Fig. 6 shows the various processing steps that another embodiment of the present invention forms light-emitting diode assembly.
Fig. 7 and Fig. 8 shows the various processing steps that another embodiment of the present invention forms light-emitting diode assembly.
Fig. 9 to Figure 11 shows the various processing steps that another embodiment of the present invention forms light-emitting diode assembly.
Figure 12 to Figure 14 shows the various plane graph with the light-emitting diode of circular embedded components.
Description of reference numerals in above-mentioned accompanying drawing is as follows:
100 ~ light-emitting diode assembly;
102 ~ substrate;
104 ~ light emitting diode construction;
106 ~ below LED layers;
108 ~ luminescent layer (or active layer);
LED layers above in the of 110 ~ the first;
120 ~ pattern mask;
200 ~ light-emitting diode assembly;
202 ~ opening;
300 ~ light-emitting diode assembly;
302 ~ embedded components;
400 ~ light-emitting diode assembly;
LED layers above in the of 410 ~ the second;
502 ~ opening;
602 ~ embedded components;
LED layers above in the of 610 ~ the second;
702 ~ opening;
802 ~ embedded components;
LED layers above in the of 810 ~ the second;
902 ~ dielectric layer;
1002 ~ light-emitting diode;
1204 ~ embedded components.
Embodiment
About the manufacture of each embodiment and occupation mode as detailed in the following.But, it should be noted that, various applicable inventive concept provided by the present invention implements according to this according to the various changes of literary composition in concrete, and be only used to display at this specific embodiment discussed and specifically use and manufacture method of the present invention, and not in order to limit the scope of the invention.
The invention provides the novel method forming light-emitting diode.The steps necessary that the present invention is explicit declaration inventive concept should be understood, but also can carry out other processes well known in exemplary steps.It is below the manufacture process that present pre-ferred embodiments is described by various drawings and Examples.In the various drawings and Examples of the present invention, the element that identical symbology is identical.
Fig. 1 to Fig. 4 shows the embodiment of the present invention, forms the various processing steps with the light-emitting diode assembly 100 of embedded components.First please refer to Fig. 1, light-emitting diode assembly 100 has substrate 102, with the light emitting diode construction 104 formed on substrate 102.Substrate 102 can be any light-emitting diode assembly substrate formed thereon, comprises sapphire (sapphire) substrate, carborundum (SiC) substrate, silicon substrate and similar substrate.For crystalline substrate, different positions, face can be used to (surfaceorientation), such as (111), (110) or (100).
Light emitting diode construction 104 can comprise any light emitting diode construction for application-specific.Generally speaking, light emitting diode construction 104 comprises the below LED layers (lowerLEDlayer) 106 be formed on substrate 102 surface.Below LED layers 106 is preferably with the III-V of the alloy of the first conductivity type doping.For example, the group III-N compound of n-type conductivity can be used, such as N-shaped gallium nitride (n-GaN).For example, below N-shaped gallium nitride, LED layers 106 can use metal organic vapor (MOVPE) technique, by substrate being arranged in the reaction chamber of metal organic plasma vapour phase epitaxy (MOPVE) equipment, be heated to about 1,000 DEG C, and supply of hydrogen, ammonia and trimethyl gallium (trimethylgallium; TMGa) formed to reaction chamber.In order to form the gallium nitride of N-shaped doping, also by silane (silane; SiH4) be introduced in reaction chamber.Pressure in reaction chamber is about 40torr.Also other technique can be used, such as molecular beam epitaxial process, metal organic chemical vapor deposition technique, hydride gas-phase epitaxy technique, liquid phase epitaxial method or similar technique, and other group III-N material can be used, for example, GaN, InN, AlN, InxGa (1-x) N, AlxGa (1-x) N, AlxInyGa (1-x-y) N or similar material is comprised.Also other III-V material can be used.
Luminescent layer 108 (sometimes also referred to as active layer) is formed in the LED layers 106 of below.Luminescent layer 108 can comprise homojunction (homojunction), heterojunction (heterojunction), single quantum well (single-quantumwell; SQW), Multiple Quantum Well (multiple-quantumwell; Or similar structure MQW).In an exemplary embodiment, luminescent layer 108 comprises unadulterated N-shaped indium gallium nitride (galliumindiumnitride; GaxInyN (1-x-y)).In other embodiments, luminescent layer 108 comprises other materials generally used, such as aluminum indium gallium nitride (AlxInyGa (1-x-y) N).Again in other embodiments, luminescent layer 108 can be Multiple Quantum Well, comprises the multiple well layer (such as InGaN) and barrier layer (such as GaN) that are alternately arranged.The formation method of luminescent layer 108 comprises metal organic vapor technique, metal organic chemical vapor deposition technique, molecular beam epitaxial process, hydride gas-phase epitaxy technique, liquid phase epitaxial method or other chemical vapour deposition techniques be applicable to.
Above in the of first, LED layers 110 is arranged on luminescent layer 108.Above in the of first, LED layers 110 is preferably with the group III-N compound adulterated in contrast to the second conductivity type alloy of the first conductivity type, such as p-type gallium nitride (p-GaN), and can be formed similar in appearance to the technique forming below LED layers 106.For example, in one embodiment, use N-shaped gallium nitride/Multiple Quantum Well/p-type gallium nitride (n-GaN/MQW/p-GaN) light emitting diode construction, and LED layers 110 can be p-type gallium nitride layer above in the of first, it uses metal organic vapor technique, by reaction chamber is heated to about 1,000 DEG C, and hydrogen, ammonia and trimethyl gallium (trimethylgallium are provided; TMGa) formed to reaction chamber.In order to form the gallium nitride of p-type doping, also by bis-cyclopentadienyl magnesium (bis-cyclopentadienylmagnesium; CP2Mg) be introduced in reaction chamber.Pressure in reaction chamber is about 40torr.
Should notice that above explanation is to provide the cardinal principle summary that light emitting diode construction structure is described for example.Other films, such as reflector (such as distributed Bragg reflector (distributedBraggreflector), omni-directional reflector (omni-directionalreflector)), buffering/nucleating layer, covering/contact layer or similar film, also can in specific applications, exist depending on demand and/or expectation.In addition, should it should be noted that when film be explain with single film time, it can be the multiple films comprising identical or different material.For example, above below LED layers and first, LED layers can distinctly comprise one or more contact layer, and one or more cover layer, and the material that above-mentioned two kinds of films can be identical or different is formed.The structure of light emitting diode construction also can change according to the application of the material category used and expection.The embodiment of the present invention expects the light emitting diode construction that can use multiple kind, and it can provide embedded structure in light emitting diode construction 104.
Also should notice that above technique is the light emitting diode construction (p-upLEDstructure) adopting layer above p-type.In this embodiment, the below LED layers 106 of employing is doped and has n-type conductivity, and above in the of adopt first, LED layers 110 is doped and has p-type conductivity.In other embodiments of the invention, it is the light emitting diode construction (n-upLEDstructure) using layer above N-shaped, the below LED layers 106 wherein adopted and/or substrate 102 are doped and have p-type conductivity, and above in the of adopt first, LED layers 110 is doped and has n-type conductivity.
Please refer to Fig. 1, pattern mask 120 comprises one or more dielectric layer.In one embodiment, pattern mask 120 comprises, and for example, uses tetraethyl-metasilicate (tetra-ethyl-ortho-silicate; And the silicon dioxide layer that formed as thermal oxidation technique or the chemical vapour deposition technique of precursors of oxygen TEOS); Or the silicon nitride layer using silane (silane) to be formed as the chemical vapour deposition technique of precursors with ammonia (ammonia).Or, pattern mask 120 can other dielectric material formed.For example, silicon oxynitride or similar material can also be used.Also the hard mask of multilayer can be used, the multiple films be such as made up of silicon dioxide and silicon nitride.In addition, other such as metal, metal nitride, metal oxide or similar materials can also be used.For example, pattern mask 120 can be formed by tungsten.
The blanket property covered form dielectric layer after, known photoetching technique then can be used to carry out Patternized technique, to obtain pattern mask 120.Generally speaking, photoetching technique comprises deposition photo anti-corrosion agent material, and the pattern part irradiation to photo anti-corrosion agent material.Afterwards, photo anti-corrosion agent material is developed to remove part photo anti-corrosion agent material.Remaining photo anti-corrosion agent material, in the processing step such as etched afterwards, can protect the material be positioned at below it.In this example, pattern mask 120 uses photo anti-corrosion agent material, by forming patterns of openings in photo anti-corrosion agent material, and then patterns of openings is etched in the dielectric layer that blanket covers and formed.Finally being formed in opening in pattern mask 120 can exposed portion light emitting diode construction 104, with the etch process after carrying out.
Fig. 2 shows the embodiment of the present invention after carrying out etching step, can form opening 202 in light-emitting diode assembly 100.In the etch process, pattern mask 120 can protect the light emitting diode construction 104 be positioned at below it not etched.Finally, the not protected part of light emitting diode construction 104 can be removed, form opening 202 whereby.In one embodiment, etch process at least comprises the light intensity electrochemistry wet etch process (photo-enhancedelectrochemical (PEC) wetetch) using potassium hydroxide (KOH).The width of opening 202 is better for about 10nm extremely about 10 μm, and at least extends downward substrate 102.Also can use other etch process, comprise dry etch process and (such as respond to coupled plasma etch process (inductively-coupledplasma (ICP) etching), reactive ion etching process (reactiveionetching; RIE) and similar technique) and/or wet etch process (low temperature etching processes (photo-assistedcryogenic (PAC) etching) that such as chemical etching process, light are auxiliary and similar technique).Should notice that opening 202 can be any shape, such as triangular pyramidal (pyramid), taper (tapered), cylindrical (cylindrical), semicircle (semisphere), cylindricality (column), rectangle (rectangular) or similar shape, and be better with the opening 202 of circle.
Fig. 3 shows the light-emitting diode assembly 100 of the embodiment of the present invention, can form embedded components 302 after filling opening 202.Should note in this embodiment, opening 202 and the embedded components 302 be formed at wherein are all film contacts with light emitting diode construction 104.In this embodiment, use non-conductive material or dielectric material filling opening 202 is preferably.For example, embedded components 302 can be the dielectric material of the such as silicon dioxide formed by chemical vapor deposition method.Also other material can be used, such as spin on glass, epoxy resin or similar material.According to above-mentioned, embedded components refers to the separately solid structure formed with solid material filling opening 202.Therefore, embedded components is not the opening (no matter being fill or unfilled opening) around unfilled opening or interior connection, such as, around joint gap in nano-pillar (interconnectedspace).
Although any suitable material can be used to form embedded components 302, but be used for being formed in the material of embedded components 302, there is the material of the refraction coefficient being different from light emitting diode construction 104 for better.In this method, the otherness of refraction coefficient, can make the light penetrated from the luminescent layer 108 of light emitting diode construction 104, reflected and/or bounce back to general line of vision (viewingdirection).
If be necessary, flatening process can be carried out.Forming the method for embedded components 302 according to being used for, likely can expect the surface from light emitting diode construction 104, removing the excessive packing material for forming embedded components 302.This can come with chemical mechanical milling tech, etch back process or similar technique.
Pattern mask 120 can remove before or after formation embedded components 302.In one embodiment, pattern mask 120 removes by the wet infusion method in hydrofluoric acid (HF).In other embodiments, pattern mask 120 is removed in flatening process.
Fig. 4 shows the embodiment of the present invention, above first, LED layers 110 is formed LED layers 410 above optional (optional) second.Above in the of second, LED layers 410 can be used to help LED layers above planarization, is beneficial to obtaining good ohmic contact afterwards, and can be formed similar in appearance to being used for the technique of LED layers 110 above formation first.But, also can use other Design and material.
Afterwards, technique can be carried out to complete light-emitting diode assembly 100.For example, can be formed (front side and/or rear contact) in electrical contact at first and second contact layer respectively, can protective layer be formed, and divisible and encapsulation LED device.
Fig. 5 and Fig. 6 shows another embodiment of the present invention, forms the various processing steps with the light-emitting diode assembly 200 of embedded components.Fig. 5 and Fig. 6 adopts the initial structure similar in appearance to previously described in reference Fig. 1, the element that wherein identical symbology is identical, but the structure that also can use other.Therefore, the method for the present embodiment is with after the above-mentioned technique discussed with reference to Fig. 1, carries out explaining referring to the technique described in Fig. 5 and Fig. 6.
Fig. 5 shows the embodiment of the present invention, carries out etching step to form opening 502.Different from the etching step previously carried out with reference to Fig. 2, the opening 502 that the etch process in the present embodiment is formed, extends only through top LED layers 110.In one embodiment, the etch process carried out at least comprises the light intensity electrochemistry wet etch process using potassium hydroxide.Also other etch process be can use, dry etch process (such as responding to coupled plasma etch process, reactive ion etching process and similar technique) and/or wet etch process (low temperature etching processes that such as chemical etching process, light are assisted and similar technique) comprised.Should notice that opening 502 can be any shape, such as triangular pyramidal (pyramid), taper (tapered), cylindrical (cylindrical), semicircle (semisphere), cylindricality (column), rectangle (rectangular) or similar shape, and be better with width between the circular open of about 10nm to about 10 μm.
Please refer to Fig. 6, opening 502 can be filled by dielectric material afterwards, form embedded components 602 whereby, and if necessary, can similar in appearance to previously with reference to the method planarization described in Fig. 3 it.
Fig. 6 also shows in the embodiment of the present invention, above first, LED layers 110 is formed LED layers 610 above optional (optional) second.Above in the of optional second, LED layers 610 can be used to help LED layers above planarization, be beneficial to obtaining good ohmic contact afterwards, and above in the of second, LED layers 610 can with similar in appearance to previously being formed with reference to the method being used for being formed LED layers 410 above in the of optional second described in Fig. 4.Technique can be carried out to complete light-emitting diode assembly 200.For example, can be formed (front side and/or rear contact) in electrical contact at first and second contact layer respectively, can protective layer be formed, and divisible and encapsulation LED device.
Fig. 7 and Fig. 8 shows another embodiment of the present invention, forms the various processing steps with the light-emitting diode assembly 300 of embedded components.Fig. 7 and Fig. 8 adopts the initial structure similar in appearance to previously described in reference Fig. 1, the element that wherein identical symbology is identical, but the structure that also can use other.
Please refer to Fig. 7, the opening 702 of formation extend only through part first above LED layers 110.Compared to the above-mentioned opening extending through LED layers 110 above in the of all first, the opening in this embodiment extend only through part first above LED layers 110.Opening 702 is formed by using the light intensity electrochemistry wet etch process of potassium hydroxide.Also other etch process be can use, dry etch process (such as responding to coupled plasma etch process, reactive ion etching process and similar technique) and/or wet etch process (low temperature etching processes that such as chemical etching process, light are assisted and similar technique) comprised.Should notice that opening 702 can be any shape, such as triangle (triangular), taper (tapered), cylindrical (cylindrical), semicircle (semisphere), cylindricality (column), rectangle (rectangular) or similar shape, and be better with width between the circular open of about 10nm to about 10 μm.
Please refer to Fig. 8, afterwards, removable pattern mask 120 (with reference to figure 7), and opening 702 can be filled by dielectric material, form embedded components 802 whereby.If necessary, can similar in appearance to previously carrying out flatening process with reference to the method described in Fig. 3.
Should notice that embedded components 802 also can use electric conducting material to be formed.In this embodiment, embedded components 802 does not contact with luminescent layer 108, and the electric conducting material buried above first in LED layers 110 therefore can be used to be formed.For example, embedded components 802 can comprise tin indium oxide (indium-tin-oxide; Or zinc oxide (ZnO) ITO).
Fig. 8 also shows one embodiment of the invention, LED layers 810 above LED layers 110 being formed optional second above first.Above in the of optional second, LED layers 810 can be used to help LED layers above planarization, be beneficial to obtaining good ohmic contact afterwards, and above in the of second, LED layers 810 can with similar in appearance to previously being formed with reference to the method being used for being formed LED layers 410 above in the of optional second described in Fig. 4.Then technique can be carried out to complete light-emitting diode assembly 300.For example, can be formed (front side and/or rear contact) in electrical contact at first and second contact layer respectively, can protective layer be formed, and divisible and encapsulation LED device.
Fig. 9 to Figure 11 shows another embodiment of the present invention, forms the various processing steps with the light-emitting diode assembly 400 of embedded components.First please refer to Fig. 9, dielectric layer 902 is formed on substrate 102.Dielectric layer 902 can comprise one or more dielectric layer.In an embodiment, for example, dielectric layer 902 can comprise use tetraethyl-metasilicate (tetra-ethyl-ortho-silicate; And the silicon dioxide layer that formed as thermal oxidation technique or the chemical vapour deposition technique of precursors of oxygen TEOS).Or, dielectric layer 902 can other dielectric material formed.For example, also can use silicon nitride, silicon oxynitride or similar material, and also can be formed with the technique of such as chemical vapour deposition (CVD).Also the dielectric layer of multilayer can be used, the plural layers be such as made up of silicon dioxide and silicon nitride.The thickness of dielectric layer 902 is better for about 2 μm to about 6 μm.
Figure 10 shows in the embodiment of the present invention, and then pattern dielectric layer 902 (with reference to Fig. 9) is to form embedded components 1002.In one embodiment, be use known photoetching technique pattern dielectric layer 902.In this example, be use photo anti-corrosion agent material to manufacture embedded components 1002.The height of each embedded components 1002 better between about 50 to about 1000 and width between about 10nm to about 10 μm.Embedded components 1002 can be any shape, such as rectangle (rectangle), circular (circle), oval (oval), triangle (triangle) and/or similar shape, and be better with circle.
Then light emitting diode construction 104 is as shown in figure 11 formed.Should notice that light emitting diode construction 104 can use analog material as previously described with respect to fig. 1 and process similarity to be formed, but because the technique that uses and material are used to form embedded components, therefore light emitting diode construction 104 part that will only be formed in substrate 102 and expose.In the method, being be different from previously referring to figs. 1 through the order described in Fig. 4, also, is first form embedded components 1002, then forms the order of light emitting diode construction 104, is formed similar in appearance to previously described device.
Figure 12 to Figure 14 shows the various plane graph with the light-emitting diode 1202 of circular embedded components 1204.In detail, Figure 12 display has the light-emitting diode 1202 of the embedded components 1204 arranged with row (columnsandrows) according to row; Figure 13 display has the light-emitting diode 1202 of staggered embedded components 1204; And Figure 14 display has the light-emitting diode 1202 of the embedded components 1204 being arranged in another pattern.Although each embedded components 1204 can be any shape, but in the preferred embodiment of Figure 12 to Figure 14 display, embedded components 1204 is circular.In this embodiment, the diameter of circular embedded components 1204 is better for about 10nm extremely about 10 μm.Also other such as oval (elliptical), rectangle (rectangular), triangle (triangular) or similar shape and other patterns can be used.
Also should notice that the shape of adjustable embedded components and pattern are to reduce the degree of current crowding (currentcrowding).In certain embodiments, embedded components is formed with dielectric material, and above-mentioned embedded components can act as current blocked (currentblocking) element, causes electric current at the ambient dynamic of embedded components, and the temperature of device may be made to raise, and make failure of apparatus.The degree reducing current crowding can be helped in embodiment as shown in Figure 14.In addition, in embodiment as shown in Figure 8, embedded components does not contact with active layer, and electric conducting material can be used to form embedded components.This further can reduce the effect of current crowding.
Although the present invention discloses as above with preferred embodiment; so itself and be not used to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when doing a little change and retouching, the scope that therefore protection scope of the present invention ought define depending on appended claim is as the criterion.
Claims (10)
1. a light-emitting diode assembly, comprising:
One substrate;
One light emitting diode construction, formed on the substrate, this light emitting diode construction have one below LED layers, LED layers above an active layer and one first, wherein, described below LED layers is the group III-N compound with the first conductivity type, and above in the of described first, LED layers is the group III-N compound with second conductivity type contrary with described first conductivity type; And
Multiple embedded components, this LED layers above first at least extending through this light emitting diode construction of part, described multiple embedded components is watched by top and is different from this LED layers above first by this light emitting diode construction institute around the refraction coefficient of, described multiple embedded components;
Wherein, described multiple embedded components is for being staggered.
2. light-emitting diode assembly as claimed in claim 1, the arrangement mode of wherein said multiple embedded components is that middle section is intensive compared with surrounding relative to described light emitting diode construction.
3. light-emitting diode assembly as claimed in claim 1, is wherein watched by top, and one of them of described multiple embedded components is arranged on the middle position relative to described light emitting diode construction.
4. light-emitting diode assembly as claimed in claim 1, wherein watched by top, the arrangement mode of described multiple embedded components is at least indentation relative to described light emitting diode construction.
5. as Claims 1-4 arbitrary as described in light-emitting diode assembly, LED layers above also comprising one second, be arranged on this above first on LED layers and described multiple embedded components, wherein, LED layers is the group III-N compound with described second conductivity type above described second;
Wherein above at least part of this first, LED layers is between described multiple embedded components and this active layer.
6. light-emitting diode assembly as claimed in claim 5, wherein said multiple embedded components comprises an electric conducting material.
7. form a method for light-emitting diode assembly, the method comprises:
One substrate is provided;
Form a light emitting diode construction on the substrate, this light emitting diode construction comprise one below LED layers, LED layers above an active layer and one first, wherein, described below LED layers is the group III-N compound with the first conductivity type, and above in the of described first, LED layers is the group III-N compound with second conductivity type contrary with described first conductivity type; And
Form multiple embedded components, its by top watch by this light emitting diode construction around, the refraction coefficient of described multiple embedded components is different from this light emitting diode construction;
Wherein, described multiple embedded components is for being staggered.
8. the method forming light-emitting diode assembly as claimed in claim 7, the arrangement mode of wherein said multiple embedded components is that middle section is intensive compared with surrounding relative to described light emitting diode construction.
9. the as claimed in claim 7 method forming light-emitting diode assembly, is wherein watched by top, and one of them of described multiple embedded components is arranged on the middle position relative to described light emitting diode construction.
10. the method forming light-emitting diode assembly as claimed in claim 7, wherein watched by top, the arrangement mode of described multiple embedded components is at least indentation relative to described light emitting diode construction.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/547,428 US8742441B2 (en) | 2008-09-10 | 2009-08-25 | Light-emitting diode with embedded elements |
| US12/547,428 | 2009-08-25 | ||
| CN2009102092331A CN101997019A (en) | 2008-09-10 | 2009-11-02 | Light-emitting diode device and method of forming same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2009102092331A Division CN101997019A (en) | 2008-09-10 | 2009-11-02 | Light-emitting diode device and method of forming same |
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| CN105226151A true CN105226151A (en) | 2016-01-06 |
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| US20070176191A1 (en) * | 2006-02-01 | 2007-08-02 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode and method of manufacturing the same |
| JP2007300017A (en) * | 2006-05-02 | 2007-11-15 | Sanken Electric Co Ltd | Semiconductor light emitting element |
| US20080135864A1 (en) * | 2006-11-15 | 2008-06-12 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (led) with emitters within structured materials |
| CN101459214A (en) * | 2003-04-15 | 2009-06-17 | 发光装置公司 | Method for manufacturing light emitting devices |
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| JP2005150675A (en) * | 2003-11-18 | 2005-06-09 | Itswell Co Ltd | Semiconductor light-emitting diode and its manufacturing method |
| KR100721454B1 (en) * | 2005-11-10 | 2007-05-23 | 서울옵토디바이스주식회사 | Light emitting device for ac power operation having photonic crystal structure and method of fbbricating the same |
| TWI370565B (en) * | 2007-09-13 | 2012-08-11 | Chi Mei Lighting Tech Corp | Light emitting diode device and applications thereof |
| US8026527B2 (en) * | 2007-12-06 | 2011-09-27 | Bridgelux, Inc. | LED structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101459214A (en) * | 2003-04-15 | 2009-06-17 | 发光装置公司 | Method for manufacturing light emitting devices |
| US20070176191A1 (en) * | 2006-02-01 | 2007-08-02 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode and method of manufacturing the same |
| JP2007300017A (en) * | 2006-05-02 | 2007-11-15 | Sanken Electric Co Ltd | Semiconductor light emitting element |
| US20080135864A1 (en) * | 2006-11-15 | 2008-06-12 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (led) with emitters within structured materials |
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| TWI424589B (en) | 2014-01-21 |
| TW201108460A (en) | 2011-03-01 |
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