CN105226019A - The integrated technology in many ways hindering film resistor on the same plane of substrate - Google Patents
The integrated technology in many ways hindering film resistor on the same plane of substrate Download PDFInfo
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- CN105226019A CN105226019A CN201410264222.4A CN201410264222A CN105226019A CN 105226019 A CN105226019 A CN 105226019A CN 201410264222 A CN201410264222 A CN 201410264222A CN 105226019 A CN105226019 A CN 105226019A
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Abstract
A kind of on the same plane of substrate the integrated practical technology in many ways hindering film resistor, adopt this technical scheme can on the conplane optional position of substrate the film resistor of integrated multiple different sheet resistance and interconnected conduction band, improve the integrated level of thin-film hybrid integrated circuit, reduce the volume of thin-film hybrid integrated circuit product, weight reduction further, thus thin-film hybrid integrated circuit overall performance and reliability can be improved further.
Description
Art:
The present invention relates to the technology that a kind of film resistor is integrated.Especially the integrated technology in many ways hindering film resistor can be realized on the same plane of substrate.
Background technology:
Current, electronic system is to miniaturization, and high performance, multifunction, low cost and high reliability future development, the system integration (SiP) is arisen at the historic moment.
In various electronic system, the ratio representative value of all passive components (to active element) quantity is 10: 1, in some radio communication system, ratio is up to 50: 1 even 100: 1. its installation cost has accounted for about 70% [1] of all costs especially, and therefore passive component is integrated in the system integration very important!
In the continuous upgrading adapting to complete electronic set and system, no matter be the size and the weight that reduce whole product, or in current existing volume, increase the function of system, the integrated of passive component can play very large effect.
The integrated technological approaches of passive component has thin-film integration, and the integrated and LTCC technology of thick film, the pluses and minuses of these three kinds of technology are shown in as following table 1
Table 1 is thin, thick film passive component performance comparison [2]
[1] the present Research poplar nation of passive component integrated technology is towards the 17th national hybrid integrated circuit academic meeting paper collection 2011.9
[2] the technological trend poplar nation of passive component embedded set is towards mixing microelectric technique 2008V01.19.No2
As can be seen from upper table contrast situation, adopt thin-film integration passive component realizability energy and integrated optimum combination.Based on the thin film integration technology of microelectronic technique, because its high frequency performance is good, components accuracy is high, and reliability is high, and integration density is high, especially can well with the feature such as semiconductor chip compatibility, become one of main flow direction of passive integration technical development.
Current, be no matter the integrated or thin-film integration of thick film, mainly integrated passive component is resistance.
Thick film integrated technology can adopt the electric slurry of different sheet resistance, by repeatedly silk screen printing and high-sintering process, can realize the integrated of multiple sheet resistance thick-film resistor on thick film substrate same plane.
Thin film integration technology adopts vacuum evaporation technology or sputtering technology, and deposit resistance film on substrate, realizes the integrated of film resistor, and typical resistances material conventional in current thin film hybrid integrated circuit mainly contains three kinds, and its material behavior sees the following form
Table 1
* TCR: temperature coefficient of resistance, it is the important technological parameters of gauge resistor stability and precision.More small resistor performance is better for TCR value.
The technology of current thin film hybrid integrated can only on the same plane of substrate the film resistor of an integrated sheet resistance, the unicity of this integrated resistor sheet resistance on the same plane of substrate, bring following limitation to the application of film hybrid integrated:
(1) in thin-film hybrid integrated circuit, particularly circuit is complicated, and in circuit, resistive element is many and resistance span large, in the product of dispersion.Adopt the resistance material of single sheet resistance can not whole resistive elements integrated in realizing circuit.In this case, designer can only select a kind of sheet resistance material to carry out a part of resistance in integrated circuit according to resistance situation in circuit, all the other resistance then adopt outside plate resistor and paste, thus add the volume and weight of product, and product reliability is also affected.
(2) another kind of situation is also had, exactly in order to enhance product performance and further reduced volume, need, to the resistance material of the integrated different sheet resistance of the resistance of difference in functionality in circuit, to give full play to the advantage of different resistance material, thin-film integration circuit integrity characteristic is fully enhanced.
Above two kinds of situations illustrate, thin-film hybrid integrated circuit is compared with thick film hybrid integrated circuit, and because it can only integrated single sheet resistance film resistor on substrate same plane, the unicity of its sheet resistance have impact on it and applies widely.
Existing in thin-film hybrid integrated circuit in order to overcome, can only the technological deficiency of film resistor of integrated single sheet resistance on the same plane of substrate, in order to improve the integrated level of film resistor further, patent of the present invention provides a kind of novel feasible technical scheme.Integratedly on the same plane that this technical scheme can be implemented in substrate in many ways hinder film resistor and interconnected conduction band.
Patent of the present invention solves the technical scheme that its technical problem adopts: the metallic film that deposit is suitable on substrate; pass through photoetching process; substrate makes recessive mask carry out protecting or isolating, realize at the integrated film resistor in many ways hindered of the same plane of substrate.
Technical scheme comprises following process:
1, according to treating the electronic circuit properties of product requirement wanting thin-film integration, the resistance that the film resistor material selecting several different sheet resistances realizes product is integrated, and substrate same plane carries out layout, and the complanation domain of deisgn product;
2, according to the product plane domain of design, design and make the reticle of different sheet resistance film resistor and the recessive mask lithography version of corresponding different sheet resistance film resistor;
3, select suitable metal material as recessive mask material, be deposited on film forming on substrate, pass through photoetching process, substrate is formed the recessive mask of different sheet resistance, protect the resistance film of the different sheet resistances wanting deposit or isolate, on the same plane of substrate, diverse location makes the film resistor of different sheet resistance;
4, depositing metal conduction band film on substrate;
5, the interconnected conduction band of photoetching, realizes that diverse location on substrate same plane is integrated hinders film resistor and interconnected in many ways.
The beneficial effect of patent of the present invention is:
1, owing to being integrated with the film resistor in many ways hindered on the same plane of substrate, thus further increases the integrated level of film resistor, can reduce small product size further.
2 owing to integratedly in many ways can hinder film resistor on the same plane of substrate, to the complanation layout design of thin-film hybrid integrated circuit, especially complicated for circuit, in circuit, resistive element is many, the integrated layout design of the product of resistance dispersion can be more flexible, optimize domain, properties of product are improved further, and volume reduces further.
3 owing to improve the integrated level of film resistor, product can be made need not to adopt outer paster type resistor, or outer paster type resistor reduces in a large number, and thus interiors of products on line reduces, and solder joint reduces, thus product reliability is significantly improved.
Accompanying drawing illustrates:
Below in conjunction with drawings and Examples, the present invention is further described:
The present invention can at the film resistor of the integrated different sheet resistance in the conplane optional position of substrate, and schematic diagram is as Fig. 1.
Fig. 1: integrated different sheet resistance film resistor schematic diagram on same plane
In Fig. 1:
1---sheet resistance 1 resistance film
2---sheet resistance 2 resistance film
3---resistance 3 resistance film
4---substrate (substrate)
The present invention adopts depositing metal film on substrate, is made the method for recessive mask by photoetching process, realizes integratedly on substrate same plane in many ways hindering film resistor.Recessive mask can be made protection type and also can make isolated form, and two schemes is described below:
1. the recessive mask means technical scheme of protection type
If product need adopt the film resistor of three sheet resistances to carry out the integrated of whole resistance in realizing circuit, if the film resistor layout of three kinds of different sheet resistances and as shown in Figure 2 interconnected on the complanation domain of product.
Fig. 2: integrated three sheet resistance film resistors and interconnected schematic layout pattern thereof on the same plane of substrate
Prepare six reticle according to layout and interconnection network, schematic diagram is illustrated in fig. 3 shown below.
Fig. 3: reticle schematic diagram
In Fig. 2:
1---sheet resistance 1 film resistor R1
2---sheet resistance 2 film resistor R2
3---sheet resistance 3 film resistor R3
4---substrate (substrate)
5---conduction band
Technological process is as described below: its process schematic as shown in Figure 4.
Fig. 4: the recessive mask means process schematic of protection type
Deposit sheet resistance 1 resistance film on substrate, adopts 1# reticle, positive photoresist, the photoetching of sheet resistance 1 material corrosion liquid, substrate stays the resistance film R1 of sheet resistance 1.(Fig. 4 A)
Deposition mask metallic film, uses 1# reticle, positive photoresist, the photoetching of mask metal erosion liquid, on the sheet resistance 1 resistance film R1 of substrate, leaves mask metal film, protect sheet resistance 1 film resistor R1.(Fig. 4 B)
The resistance film of deposit sheet resistance 2, adopts 2# reticle, positive photoresist, sheet resistance 2 resistance material corrosive liquid, makes the resistance film R2 of sheet resistance 2 by lithography, and leave the sheet resistance film resistor R1 of mask metal diaphragm.(Fig. 4 C)
Deposition mask metal film, adopts 3# reticle, positive photoresist, the photoetching of mask metal corrosive liquid, make R1, R2 on the surface coverage mask metal film protect.(Fig. 4 D)
Deposit sheet resistance 3 resistance film, adopt 4# reticle, positive photoresist, sheet resistance 3 resistance material corrosive liquid carry out photoetching, make sheet resistance 3 film resistor R3 by lithography, R1, R2 of substrate leaving sheet resistance 3 resistance film R3 and having mask metal film to protect.(Fig. 4 E)
Adopt 3# reticle, negative photoresist, mask metal corrosive liquid to carry out photoetching, the protectiveness mask metal film on R1, R2 is removed, substrate leaves R1, R2, R3 of maskless metal coating.(Fig. 4 F)
Deposit conduction band film, adopts 5# reticle, positive photoresist, conduction band material corrosion liquid to carry out photoetching, R1, R2, R3 of substrate leaving conduction band figure He having conduction band to cover.(Fig. 4 G)
6# reticle, negative photoresist, conduction band material corrosion liquid is adopted to carry out photoetching.Remove the conduction band film on R1, R2, R3 film resistor, finally obtain three sheet resistance film resistors as layout requirement and interconnect, achieving the film resistor being integrated with three sheet resistances at the same plane of substrate like this.(Fig. 4 H) its rete profile as shown in Figure 5.
Fig. 5: integrated three sheet resistance film resistors and interconnected film layer structure profile on substrate same plane
In Fig. 4:
1---sheet resistance 1 film resistor R1
2---sheet resistance 2 film resistor R2
3---sheet resistance 3 film resistor R3
4---substrate (substrate)
5---interconnected conduction band
6---the R1 of mask metal film protection
7---the R2 of mask metal film protection
8---there is the R1 that conduction band film covers
9---there is the R2 that conduction band film covers
10---there is the R3 that conduction band film covers
In Fig. 5:
1---sheet resistance 1 film resistor R1
2---sheet resistance 2 film resistor R2
3---sheet resistance 3 film resistor R3
4---substrate (substrate)
5---interconnected conduction band
2. the recessive mask means technical scheme of isolated form
Equally, if the film resistor layout of three kinds of different sheet resistances as shown in Figure 2 on the complanation domain of product, prepare six reticle as shown in Figure 3 according to the layout of Fig. 2 and interconnected figure.
Technological process is as follows: its process schematic as shown in Figure 6.
Fig. 6: the recessive mask means process schematic of isolated form
Deposition mask metallic film, adopts 1# reticle, negative photoresist, the photoetching of mask metal erosion liquid, and substrate leaves mask metal film as the recessive mask of isolated form, the isolation window outputing sheet resistance 1 film resistor R1 to be deposited is isolated.(Fig. 6 I)
Deposit sheet resistance 1 resistance film, adopts 1# reticle, first uses positive photoresist, the photoetching of sheet resistance 1 resistance film corrosive liquid, rear negative photoresist and the photoetching of mask metal erosion liquid, substrate leaves sheet resistance 1 film resistor figure R1.(Fig. 6 J)
Deposition mask metal film; adopt 2# reticle, negative photoresist, the photoetching of mask metal erosion liquid; substrate leaves the mask metal film of the isolation window of sheet resistance 2 film resistor R2 to be deposited, now mask metal film also protects following sheet resistance 1 film resistor R1.(Fig. 6 K)
Deposit sheet resistance 2 resistance film, adopt 2# reticle, positive photoresist, the photoetching of sheet resistance 2 film resistor material corrosive liquid, make sheet resistance 2 film resistor R2 by lithography, substrate leaves sheet resistance 2 film resistor R2, now mask metal film also protects sheet resistance 1 film resistor R1.(Fig. 6 L)
Deposition mask metal film; adopt 4# reticle, mask metal erosion liquid, negative photoresist photoetching; mask metal film is outputed the isolation window of sheet resistance 3 film resistor R3 to be deposited, and mask metal film protects film resistor R1 and R2 of its following sheet resistance 1 and sheet resistance 2 simultaneously.(Fig. 6 M)
Deposit sheet resistance 3 resistance film, adopt 4# reticle, first use positive photoresist, sheet resistance 3 film resistor material corrosive liquid, make sheet resistance 3 film resistor R3 figure by lithography. use negative photoresist, mask metal erosion liquid afterwards, mask metal film in sheet resistance 1, sheet resistance 2 is removed, substrate leaves sheet resistance 1 film resistor R1, sheet resistance 2 film resistor R2, sheet resistance 3 film resistor R3 resistance pattern.(Fig. 6 N)
Deposit conduction band film, adopts 5# reticle, positive photoresist, conduction band material corrosion corrosion, substrate leaves the film resistor of three sheet resistances that conduction band film covers and interconnected conduction band film.(Fig. 6 O)
Adopt 6# reticle, negative photoresist, conduction band material corrosion corrosion, remove the conduction band film on R1, R2, R3, substrate leaves the film resistor of three sheet resistances and interconnected conduction band, achieve integrated three different sheet resistance film resistors and interconnected conduction band on same plane.(Fig. 6 P)
Its film resistance structure profile also as shown in Figure 5.
In Fig. 6:
1---sheet resistance 1 film resistor R1
2---sheet resistance 2 film resistor R2
3---sheet resistance 3 film resistor R3
4---substrate (substrate)
5---conduction band
6---the R1 of mask metal film protection
7---the R2 of mask metal film protection
8---there is the R1 that conduction band film covers
9---there is the R2 that conduction band film covers
10---there is the R3 that conduction band film covers
11---recessive mask metal film
12---the isolation window of sheet resistance 1 film resistor R1 to be deposited
13---the isolation window of sheet resistance 2 film resistor R2 to be deposited
14---the isolation window of sheet resistance 3 film resistor R3 to be deposited
As can be seen from the above, the recessive mask of protection type is substantially identical with the process technology scheme step of the recessive mask of isolated form, and required reticle is also substantially identical, and user can select flexibly according to the actual conditions in technical process.
Patent of the present invention can hinder film resistor in many ways with integrated at grade, also can use in the making of the compound conduction band film of integrated different performance at grade.
Practical example:
×× product circuit is more complicated, and circuit is by third stage amplifier, and high pass filter, amplitude limiter, the element circuit such as gain controller composition, circuit element is many, resistance 44, and the large and dispersion of Standard resistance range, from 39 Ω ~ 360K Ω.
Original product substrate is Al
2o
3ceramic substrate, adopts the Cr-Si resistance of 2K Ω/ to carry out thin-film integration K Ω level resistance, and ohm level resistance adopts plate resistor to paste outward, and small product size is 40 × 26 × 5.1=5304mm
3
Processing technology routine of the present invention is adopted to redesign integrated complanation domain to this circuit product, by all integrated for 44 resistance on the same plane of substrate.Ohm level resistance adopts the NiCr resistance of 200 Ω/ integrated, and K Ω level resistance adopts the Cr-Si resistance of 2K Ω/ integrated.
According to the Route Plane laying out pattern redesigned, devise three pieces of recessive mask lithography versions and one piece of interconnected conduction band reticle.Select Ti/W metal as recessive mask material, adopt the recessive mask means technological process of isolated form.Select Ti/W-Cu-Ti/W-Au as interconnected conduction band.Recessive mask material, two kinds of sheet resistance resistance and interconnected conduction band all adopt high-frequency sputtering technique film forming, adopt Al
2o
3substrate made by ceramic substrate, and the small product size of manufacturing experimently out is 35 × 18.9 × 5.1=3373.65mm
3.
Can find out, on same plane after the integrated resistance of resistance in many ways, the comparatively original only integrated sheet resistance small product size of small product size reduces 1/3rd, successful.
Product performance index meets the requirements.
The key technical indexes is:
1. gain G reatT.GreaT.GT 70dB
2. high pass cut off frequency (20 ± 1) KHz
3. filtering flatness≤± 0.5dB
4. noise≤60mV
5. gain control range 60dB
6. working temperature-55 DEG C ~ 125 DEG C
Supplemental instruction
(1) about the selection of recessive mask material
In theory, in thin film hybrid circuit, common metal material such as Cr, Cu, Ni, Ti/W, Al etc. can be used as recessive mask material, but consider impact between different materials corrosive liquid and with the factor such as backing material processing compatibility, suitable optimum selecting wanted by recessive mask metal material.
According to our experimental study, suggestion ceramic-like substrate selects Cu and Ti/W to be advisable as recessive mask metal during integrated Ni-Cr, Cr-Si resistance, and on organic polymer substrate, (as polyimides) then should adopt Ti/W as well.
(2) selecting about conduction band material
At present, in thin film hybrid circuit, Ni-Cr resistance adopts Cr-Au or Ni-Au compound conduction band, and Cr-Si resistance then adopts Cr-Cu-Cr-Au or Cr-Cu-Ni-Au compound conduction band, if resistance conduction band combination traditionally, certainly will increase the complexity of technique.In order to Simplified flowsheet, a kind of NEW TYPE OF COMPOSITE conduction band of our experimental studies Ti/W-Cu-Ti/W-Au, this compound conduction band all can mate with Ni-Cr resistance, Cr-Si resistance and TaN resistance, we advise when the integrated resistance of resistance in many ways, the unified Ti/W-Cu-Ti/W-Au that adopts of conduction band material is advisable, in such thin-film hybrid integrated circuit, conventional typical case three sheet resistance resistance can adopt, and technique is greatly simplified.
Claims (2)
1. depositing metal film on substrate, adopt photoetching process, substrate makes the process technology scheme of recessive mask, and to realize on the same plane of the substrate of thin film integrated circuit product the integrated film resistor that in many ways hinders and interconnected, its feature comprises the following steps:
A, basis are waited to want integrated electronic circuit properties of product requirement, the film resistor material of several different sheet resistances selected, the integrated of film resistor is hindered in many ways to the resistance in electronic circuit, the same plane of substrate carries out layout, the complanation domain that deisgn product is integrated;
B, product plane domain according to design, design and make the reticle of different sheet resistance film resistor and the recessive mask lithography version of corresponding different sheet resistance film resistor and interconnect conductors reticle;
C, technological process according to the recessive mask means of the protection type described in patent specification of the present invention or the recessive mask means of isolated form, select suitable metal material as recessive mask material in the different phase of technological process, be deposited on substrate, made the recessive mask of different sheet resistance film resistor by photoetching process respectively;
D, the protection utilizing recessive mask or buffer action, the resistance film of the different sheet resistance of deposit photoetching on the same plane of substrate;
E, on substrate depositing metal conduction band film, and the interconnected conduction band of photoetching and resistance pattern, realize the integrated film resistor and interconnected of in many ways hindering of diverse location on the same plane of substrate.
2. the depositing metal film on substrate according to right 1, adopts photoetching process on substrate, to make the technical scheme of recessive mask, the film resistor of resistance in many ways integrated on the same plane of substrate.Its film resistance architectural feature is: the film resistor of different sheet resistance is all single resistive material film of each different sheet resistance, and the exit electrode of film resistor is also all conduction band film sheet resistance different from each single resistive film superposition compositions.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034111A (en) * | 2019-03-13 | 2019-07-19 | 珠海博雅科技有限公司 | Layout design method suitable for Banba structure bandgap voltage reference |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136473A (en) * | 2010-01-25 | 2011-07-27 | 上海华虹Nec电子有限公司 | Metal film resistor on IC (Integrated Circuit) and manufacture method thereof |
| CN102299054A (en) * | 2010-06-28 | 2011-12-28 | 台湾积体电路制造股份有限公司 | Hard mask for thin film resistor manufacture |
| CN203205420U (en) * | 2012-12-12 | 2013-09-18 | 北京飞宇微电子有限责任公司 | Novel thin film hybrid integrated circuit film formation substrate |
-
2014
- 2014-06-12 CN CN201410264222.4A patent/CN105226019A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136473A (en) * | 2010-01-25 | 2011-07-27 | 上海华虹Nec电子有限公司 | Metal film resistor on IC (Integrated Circuit) and manufacture method thereof |
| CN102299054A (en) * | 2010-06-28 | 2011-12-28 | 台湾积体电路制造股份有限公司 | Hard mask for thin film resistor manufacture |
| CN203205420U (en) * | 2012-12-12 | 2013-09-18 | 北京飞宇微电子有限责任公司 | Novel thin film hybrid integrated circuit film formation substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034111A (en) * | 2019-03-13 | 2019-07-19 | 珠海博雅科技有限公司 | Layout design method suitable for Banba structure bandgap voltage reference |
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