CN105225908B - Pallet component and etching apparatus - Google Patents
Pallet component and etching apparatus Download PDFInfo
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- CN105225908B CN105225908B CN201410273661.1A CN201410273661A CN105225908B CN 105225908 B CN105225908 B CN 105225908B CN 201410273661 A CN201410273661 A CN 201410273661A CN 105225908 B CN105225908 B CN 105225908B
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- pallet
- support member
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- height
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Abstract
The present invention provides a kind of pallet component, including pallet and the support member being arranged on the pallet, the support member is used to support multiple substrates, and cause to be formed with the gap for accommodating cooling gas between the basal surface of the substrate and the surface of the pallet, the support member includes being arranged on first support member in the first precalculated position and is arranged on second support member in the second precalculated position, the height that first support member protrudes from the surface of the pallet is less than the height that second support member protrudes from the surface of the pallet, so that the gap between the substrate that is supported less than second support member of the gap between the substrate that is supported of first support member and the surface of the pallet and the surface of the pallet, first precalculated position corresponds to plasma concentration relatively low region when carrying out plasma etching using the pallet component.Correspondingly, the present invention also provides a kind of etching apparatus.The present invention can improve the uniformity of the substrate etch rate in different zones.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing technology field, in particular it relates to a kind of pallet component and one kind include being somebody's turn to do
The etching apparatus of pallet component.
Background technology
Graphical sapphire substrate (PSS, patterned sapphire substrate) is sent out as gallium nitride (GaN) base
Optical diode illuminates epitaxial substrate material, the threading dislocation density of epitaxy of gallium nitride film can be reduced due to it, and significantly improve hair
The light extraction efficiency of optical diode and be widely studied and application.On the one hand, graphical sapphire substrate pattern is by reflection
Change the track of light, light is diminished (less than the cirtical angle of total reflection) in the incidence angle of interface outgoing, so as to transmit, improve light
Recovery rate；On the other hand, pattern can also make follow-up GaN growth the effect of lateral epitaxy occur, reduce crystal and lack
Fall into, improve light emitting diode internal quantum efficiency.
The manufacturing process of PSS is mainly included in the technical process such as the photoetching that is carried out on plane sapphire substrate and etching.Such as
Shown in Fig. 1 and Fig. 2, in etching technics, for improve production efficiency, usually multiple substrates 1 are fixed on a set of pallet 2, lid
Etched simultaneously in plate 3, i.e., first by pallet by the incoming chamber of manipulator, being then placed on the pedestal of plasma etch apparatus
On, reacting gas glow discharge under the mode of inductive produces living radical, metastable particle, atom etc., these work
Property particle it is accelerated after there is physics and chemical reaction with substrate surface, the figure required for etching.The meeting in etching process
Substantial amounts of heat is produced in substrate surface, so to be passed through helium in the gap of substrate 1 and pallet 2, substrate 1 is carried out cold
But.
The etching machine above chamber is positioned over for Top electrode, because electrode coil is loop configuration, build-up of luminance post plasma
Bulk concentration skewness so that tray center position plasma density is relatively low.Under each substrate cooling effect same case,
To cause the etch rate of center substrate compared with other positions slowly, dimension of picture is bigger than normal, so as to reduce uniformity between piece.
The content of the invention
It is an object of the invention to provide a kind of pallet component and etching apparatus, the region relatively low to improve plasma concentration
Etch rate, so as to improve the difference of etch rate between different zones, and then improve etching homogeneity.
The present invention provides a kind of pallet component, including pallet and the support member being arranged on the pallet, the support member
For supporting multiple substrates, and cause to be formed with receiving cooling gas between the basal surface of the substrate and the surface of the pallet
Gap, the support member include be arranged on the first precalculated position the first support member and be arranged on the second of the second precalculated position
Support member, the height that first support member protrudes from the surface of the pallet protrudes from the support less than second support member
The height on the surface of disk, so that the gap between the substrate that is supported of first support member and the surface of the pallet is less than institute
State the gap between the substrate and the surface of the pallet that the second support member supported, first precalculated position corresponds to and utilizes
The pallet component carries out plasma concentration relatively low region during plasma etching.
Preferably, first precalculated position is located at the centre of the pallet.
Preferably, draw-in groove is additionally provided with the pallet, the draw-in groove includes the corresponding with first support member first card
Groove and the second draw-in groove corresponding with second support member, first support member are arranged in first draw-in groove, and described
Two support members are arranged in the second draw-in groove, the height of the height less than second support member of first support member, and/or institute
State the depth of the depth more than second draw-in groove of the first draw-in groove.
Preferably, the height that first support member protrudes from the tray surface is 0~70 μm, second support member
The height for protruding from the tray surface is 40~200 μm.
Preferably, the surface of the pallet is formed with multiple with the one-to-one plummer of the support member, the plummer
Towards substrate protrusion, the draw-in groove and the support member are arranged on the plummer, with the first support member phase
Height of the height of corresponding plummer more than the plummer corresponding with second support member.
Preferably, the passage for running through the pallet along the thickness direction of the pallet is additionally provided with the pallet.
Preferably, the pallet component also includes cover plate, and the cover plate is arranged on the top of the pallet, by the base
Piece is fixed between the cover plate and the pallet.
Correspondingly, the present invention also provides a kind of etching apparatus, including pallet component and rising above the pallet component
Bright line circle, wherein, the pallet component above-mentioned pallet component provided by the present invention, first precalculated position corresponds to described
The axis of build-up of luminance coil.
Preferably, the etching apparatus is the etching apparatus for etched features Sapphire Substrate.
As can be seen that when plasma etching is carried out, for the substrate in plasma concentration region higher, being located at
Gap between the basal surface and tray surface of the substrate in the relatively low region of plasma concentration is smaller so that plasma concentration is relatively low
Region in substrate and pallet between gap in cooling gas pyroconductivity it is larger so that the substrate in the region
Temperature it is relatively low, so as to improve the substrate etch rate in the low region of plasma concentration, and then reduce due to plasma concentration
The difference of etching speed caused by different, the uniformity of the etching of the substrate in raising different zones.
Brief description of the drawings
Accompanying drawing is, for providing a further understanding of the present invention, and to constitute the part of specification, with following tool
Body implementation method is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Shown in Fig. 1 is existing pallet component structural representation；
Shown in Fig. 2 be Fig. 1 A-A sectional views；
Shown in Fig. 3 be pallet component provided by the present invention structural representation.
Description of reference numerals
1、30：Substrate；2、10：Pallet；3、50：Cover plate；11：Plummer；21：First support member；22：Second support member；
40：Passage.
Specific embodiment
Specific embodiment of the invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
As an aspect of of the present present invention, there is provided a kind of pallet component, as shown in figure 3, the pallet component includes pallet 10
With the support member being arranged on pallet 10, the support member is used to support multiple substrates 30, and cause the basal surface of substrate 30 with
The gap for accommodating cooling gas is formed between the surface of pallet 10, the support member includes being arranged on the of the first precalculated position
One support member 21 and the second support member 22 for being arranged on the second precalculated position, the first support member 21 protrude from the surface of pallet 10
The height on the surface of pallet 10 is highly protruded from less than the second support member 22 so that the substrate 30 that is supported of the first support member 21 with
Between between substrate 30 that gap h1 between the surface of pallet 10 is supported less than the second support member 22 and the surface of pallet 10
Gap h2.First precalculated position corresponds to plasma concentration relatively low region when carrying out plasma etching using the pallet component.
The relatively low region of the plasma concentration is fixed in etching apparatus, for example, being positioned over quarter for Top electrode
Etching apparatus above erosion chamber, because electrode coil is loop configuration, thus the relatively low region of the plasma concentration is corresponding
In the centre of electrode coil.
In the present invention, the first support member 21 protrudes from the height on the surface of pallet 10 and is protruded from less than the second support member 22
The height on the surface of pallet 10, so that gap between the substrate 30 in the first precalculated position and the surface of pallet 10 is less than the
Gap between the substrate 30 in two precalculated positions and the surface of pallet 10.In other words, and in plasma concentration region higher
Substrate 30 is compared, and the gap between substrate 30 and pallet 10 in the relatively low region of plasma concentration is smaller so that plasma is dense
The pyroconductivity of cooling gas (e.g., helium) is larger in the gap between substrate 30 and pallet 10 in the relatively low region of degree, because
And cause the region in substrate 30 temperature it is relatively low, be easy to perform etching it, so as to improve the low region of plasma concentration
The interior etch rate of substrate 30 (etch rate of the substrate in plasma concentration region high is constant), so reduce due to etc. from
The difference of etching speed caused by sub- concentration is different, the uniformity of the etching of the substrate 30 in raising different zones.
Used as a kind of specific embodiment of the invention, first precalculated position is located at the centre of pallet.For example,
When 22 substrates can be set on pallet 10 (that is, along the direction at center to the edge of pallet set gradually a substrate, 7
Substrate and 14 substrates), the plasma concentration in the centre of pallet 10 is relatively low, and the first precalculated position is located at the center of pallet 10
Position, the first support member 21 is the support member in the centre for being arranged on pallet 10, the centre for supporting pallet 10
Substrate, the second support member 22 is other support members beyond the first support member 21, for beyond the centre for supporting pallet 10
21 substrates.Height of the height of the first support member 21 less than the second support member 22 so that be arranged on the centre of pallet 10
The basal surface of substrate 30 and the surface of pallet 10 between gap it is smaller, the substrate 30 of the position beyond the centre of pallet 10
Basal surface and the surface of pallet 10 between gap it is larger.
In the present invention, the support member can be sealing ring, and substrate 30 is arranged on the sealing ring, so as in substrate
30 closed spaces formed below, for accommodating cooling gas, cool down with to substrate 30.
As a kind of specific embodiment of the invention, draw-in groove is also provided with pallet 10, the draw-in groove includes and institute
State corresponding first draw-in groove of the first support member 21 and with corresponding second draw-in groove of the second support member 22, the first support member 21 is arranged on
In first draw-in groove, the second support member 22 is arranged in the second draw-in groove, and the height of the first support member 21 is less than the second support member
22 height, and/or first draw-in groove depth more than second draw-in groove depth so that the first support member 21 is convex
Height for the surface of pallet 10 protrudes from the height on the surface of pallet 10 less than the second support member 22, and then causes to be arranged on first
Gap between the basal surface of substrate 30 in precalculated position and the surface of pallet is smaller, is arranged on the substrate 30 in the second precalculated position
Basal surface and the surface of pallet 10 between gap it is larger.
Further, the height that the first support member 21 protrudes from the surface of pallet 10 is 0~70 μm, the second support member 22
The height for protruding from the surface of pallet 10 is 40~200 μm.That is, the basal surface and pallet of the substrate 30 in the first precalculated position are arranged on
Gap between 10 surface is 0~70 μm, is arranged on the basal surface of the substrate 30 in the second precalculated position and the surface of pallet 10
Between gap be 40~200 μm.For example, the height that the first support member 21 protrudes from the surface of pallet 10 is 30 μm, second
The height that support member 22 protrudes from the surface of pallet 10 is 100 μm.
In the present invention, when the gap being arranged between the substrate 30 in the first precalculated position and the surface of pallet 10 is smaller,
And the gap that is arranged between the substrate 30 in the second precalculated position and the surface of pallet 10 it is larger when, can be in different ways
So that substrate 30 is stably placed on pallet 10.For example, the height of the fixture of fixed substrate 30 can be adjusted, will be arranged on
The height reduction of the corresponding fixture of substrate 30 in the first precalculated position so that be arranged on the height of the substrate 30 in the first precalculated position
Degree is reduced, so that the gap being arranged between the basal surface of the substrate 30 in the first precalculated position and the surface of pallet 10 subtracts
It is small；Can also adjusting tray 10 different zones height, the height of the first pre-position of pallet 10 is raised, so as to set
The gap put between the basal surface of the substrate 30 in the first precalculated position and the surface of pallet 10 reduces.
As a kind of preferred embodiment of the invention, as shown in figure 3, the surface of pallet 10 be formed with it is multiple with the branch
The one-to-one plummer 11 of support member, the plummer 11 protrudes towards substrate 30, and the draw-in groove and the support member are arranged at
On plummer 11, the height of the plummer 11 corresponding with the first support member 21 is more than the carrying corresponding with the second support member 22
The height of platform 11 so that be arranged on the basal surface of substrate 30 in the first precalculated position and pallet 10 surface (plummer 11
Surface) between gap it is smaller, be arranged on the gap between the basal surface of substrate 30 in the second precalculated position and the surface of pallet 10
It is larger, and multiple substrates 30 is highly consistent, consequently facilitating be fixed to multiple substrates 30 simultaneously.
Further, as shown in figure 3, being also provided with running through pallet 10 along the thickness direction of pallet 10 on pallet 10
Passage 40.Multiple passages 40 can be set in the corresponding position of pallet 10 and each substrate 30, with to each substrate
30 basal surface is passed through cooling gas, so as to be cooled down to substrate 30.
Further, as shown in figure 3, the pallet component can also include cover plate 50, cover plate 50 is arranged on pallet 10
Top, substrate 30 is fixed between cover plate 50 and pallet 10.Specifically, can be provided with cover plate 50 and substrate 30 pairs
The through hole 40 answered, when be fixed on substrate 30 between cover plate 50 and pallet 10 by cover plate 50, the upper surface of substrate 30 can be by institute
State through hole to expose, so as to be contacted with the active particle in reaction chamber, to perform etching.
Above-mentioned is the description to pallet component provided by the present invention, it can be seen that when plasma etching is carried out, relatively
For the substrate in plasma concentration region higher, positioned at the basal surface and pallet of the substrate in the relatively low region of plasma concentration
Gap between surface is smaller so that cooling gas in the gap between substrate and pallet in the relatively low region of plasma concentration
Pyroconductivity it is larger so that the temperature of the substrate in the region is relatively low, so as to improve in the low region of plasma concentration
Substrate etch rate, and then reduce due to plasma concentration it is different caused by etching speed difference, improve in different zones
Substrate etching uniformity.
As another aspect of the present invention, there is provided a kind of etching apparatus, including pallet component and on the pallet component
The build-up of luminance coil of side, wherein, the pallet component is above-mentioned pallet component provided by the present invention, first precalculated position pair
The axis of build-up of luminance coil described in Ying Yu, so as to improve the etch rate in the first precalculated position, improves due to plasma concentration distribution
The different phenomenon of uneven and etch rate that cause occurs, and improves the uniformity of substrate etching.
Preferably, the etching apparatus is for etching PSS (graphical sapphire substrate, patterned sapphire
Substrate etching apparatus).In etching process, by multiple for etch substrates be fixed on etching apparatus pallet and
Performed etching simultaneously in cover plate, the present invention can improve the etch rate of the substrate at the axial location corresponding to build-up of luminance coil,
The uniformity of substrate etching is improved, therefore, carry out in a large amount of PSS etching process, the quality of PSS can be provided.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary implementation for using
Mode, but the invention is not limited in this.For those skilled in the art, essence of the invention is not being departed from
In the case of god and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of pallet component, including pallet and the support member being arranged on the pallet, the support member are used to support multiple
Substrate, and cause to be formed with the gap for accommodating cooling gas between the basal surface of the substrate and the surface of the pallet, it is special
Levy and be, the support member includes being arranged on first support member in the first precalculated position and is arranged on the second of the second precalculated position
Support member, the height that first support member protrudes from the surface of the pallet protrudes from the support less than second support member
The height on the surface of disk, so that the gap between the substrate that is supported of first support member and the surface of the pallet is less than institute
State the gap between the substrate and the surface of the pallet that the second support member supported, first precalculated position corresponds to and utilizes
The pallet component carries out plasma concentration relatively low region during plasma etching.
2. pallet component according to claim 1, it is characterised in that first precalculated position is located in the pallet
Center portion position.
3. pallet component according to claim 1, it is characterised in that be additionally provided with draw-in groove on the pallet, the draw-in groove bag
Include the first draw-in groove corresponding with first support member and the second draw-in groove corresponding with second support member, first support
Part is arranged in first draw-in groove, and second support member is arranged in the second draw-in groove, first support member it is highly small
It is more than the depth of second draw-in groove in the depth of the height of second support member, and/or first draw-in groove.
4. pallet component according to claim 1, it is characterised in that first support member protrudes from the tray surface
It highly it is 0~70 μm, the height that second support member protrudes from the tray surface is 40~200 μm.
5. pallet component according to claim 3, it is characterised in that the surface of the pallet is formed with multiple with the branch
The one-to-one plummer of support member, the plummer protrudes towards the substrate, and the draw-in groove and the support member are arranged at institute
State on plummer, the height of the plummer corresponding with first support member holds more than corresponding with second support member
The height of microscope carrier.
6. pallet component as claimed in any of claims 1 to 5, it is characterised in that be additionally provided with the pallet
Thickness direction along the pallet runs through the passage of the pallet.
7. pallet component as claimed in any of claims 1 to 5, it is characterised in that the pallet component also includes
Cover plate, the cover plate is arranged on the top of the pallet, and the substrate is fixed between the cover plate and the pallet.
8. a kind of etching apparatus, including pallet component and the build-up of luminance coil above the pallet component, it is characterised in that described
Pallet component of the pallet component described in any one in claim 1 to 7, first precalculated position corresponds to the build-up of luminance
The axis of coil.
9. etching apparatus according to claim 8, it is characterised in that the etching apparatus is blue precious for etched featuresization
The etching apparatus at stone lining bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410273661.1A CN105225908B (en) | 2014-06-18 | 2014-06-18 | Pallet component and etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410273661.1A CN105225908B (en) | 2014-06-18 | 2014-06-18 | Pallet component and etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105225908A CN105225908A (en) | 2016-01-06 |
| CN105225908B true CN105225908B (en) | 2017-07-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410273661.1A Active CN105225908B (en) | 2014-06-18 | 2014-06-18 | Pallet component and etching apparatus |
Country Status (1)
| Country | Link |
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| CN (1) | CN105225908B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653663B (en) * | 2015-11-03 | 2021-07-13 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor processing equipment |
| CN111653509B (en) * | 2020-05-27 | 2023-07-21 | 黄山博蓝特半导体科技有限公司 | Etching method of patterned sapphire substrate for high-wavelength-consistency LED chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6653639B1 (en) * | 2000-10-17 | 2003-11-25 | Nikon Corporation | Chuck for mounting reticle to a reticle stage |
| JP2004170229A (en) * | 2002-11-20 | 2004-06-17 | Ulvac Kyushu Corp | Surface treatment method for test sample for transmission electron microscope |
| JP2009244240A (en) * | 2008-04-01 | 2009-10-22 | Sumitomo Electric Ind Ltd | Method for manufacturing sample for cross-sectional observation by scanning electron microscope |
| CN101740448A (en) * | 2008-11-17 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment and substrate support plate thereof |
| CN103590114A (en) * | 2012-08-17 | 2014-02-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet securing device and plasma processing apparatus |
-
2014
- 2014-06-18 CN CN201410273661.1A patent/CN105225908B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6653639B1 (en) * | 2000-10-17 | 2003-11-25 | Nikon Corporation | Chuck for mounting reticle to a reticle stage |
| JP2004170229A (en) * | 2002-11-20 | 2004-06-17 | Ulvac Kyushu Corp | Surface treatment method for test sample for transmission electron microscope |
| JP2009244240A (en) * | 2008-04-01 | 2009-10-22 | Sumitomo Electric Ind Ltd | Method for manufacturing sample for cross-sectional observation by scanning electron microscope |
| CN101740448A (en) * | 2008-11-17 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment and substrate support plate thereof |
| CN103590114A (en) * | 2012-08-17 | 2014-02-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet securing device and plasma processing apparatus |
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| CN105225908A (en) | 2016-01-06 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |