CN105224155A - Capacitance type sensor, sensing device, sensing system and electronic equipment - Google Patents

Capacitance type sensor, sensing device, sensing system and electronic equipment Download PDF

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Publication number
CN105224155A
CN105224155A CN201510612860.5A CN201510612860A CN105224155A CN 105224155 A CN105224155 A CN 105224155A CN 201510612860 A CN201510612860 A CN 201510612860A CN 105224155 A CN105224155 A CN 105224155A
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China
Prior art keywords
sensing
electrode
signal
transistor
capacitance
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CN201510612860.5A
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Chinese (zh)
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刘雪春
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Shenzhen Sunwave Technology Co Ltd
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Shenzhen Sunwave Technology Co Ltd
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Priority to CN201510612860.5A priority Critical patent/CN105224155A/en
Publication of CN105224155A publication Critical patent/CN105224155A/en
Priority to PCT/CN2016/094467 priority patent/WO2017050040A1/en
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)

Abstract

The invention discloses a kind of capacitance type sensor, sensing device, sensing system and electronic equipment.Described capacitance type sensor comprises multiple sensing unit, and described sensing unit comprises sensing electrode and sensing circuit.Described sensing electrode can be coupled to target object in a capacitive manner, and described sensing electrode is for loading reference signal.Described sensing circuit comprises third transistor, and described third transistor is for responding because of the close of target object or the change touching caused reference signal on sensing electrode, and correspondence produces the second AC signal.The sensing signal that described capacitance type sensor exports is more stable.The sensing precision with the sensing device of described capacitance type sensor and sensing system is more accurate.There is the better user experience of the electronic equipment of sensing device or sensing system.

Description

Capacitance type sensor, sensing device, sensing system and electronic equipment
Technical field
The present invention relates to capacitive sensing technical field, particularly relate to a kind of capacitance type sensor, capacitance-type sensing device, capacitive sensing system and electronic equipment.
Background technology
Along with the development of society, increasing electronic equipment (as: the various intelligent artifact such as mobile phone, panel computer, Wearable and Smart Home) generally all can arrange one or more sensing devices.Described sensing device comprises as the touch sensing device of sensing user touch operation, the biological information sensing device of sensing biological information of human body etc.At present, the capacitance-type sensing device that adopts such as biological information sensing device performs sense operation more.
Capacitance-type sensing device generally comprises capacitance type sensor and control circuit.Described capacitance type sensor comprises multiple sensing unit (sensor).The drive singal of described multiple sensing unit reception control circuit, and corresponding output sensing signal gives described control circuit, to obtain corresponding sensitive information when user touches described multiple sensing unit.
So, each sensing unit independent detection, exports single sensing signal respectively, and described single sensing signal (as: voltage and/or electricity) common intensity is more weak.In addition, the sensing signal such as voltage, electricity is subject to the impact of stray capacitance in capacitance-type sensing device in the process be transmitted, more unstable, thus causes the sensing of capacitance-type sensing device to there is out of true or occur the situation of erroneous judgement, affects Consumer's Experience.
Summary of the invention
In view of this, the invention provides the electronic equipment of the higher capacitive sensing system of the more stable capacitance type sensor of a kind of easy output sensing signal, the higher capacitance-type sensing device of sensing precision, sensing precision and better user experience.
The invention provides a kind of capacitance type sensor, comprising:
Multiple sensing unit, described sensing unit comprises:
Sensing electrode, can be coupled to target object in a capacitive manner, and described sensing electrode is for loading reference signal; With
Sensing circuit, comprising:
Third transistor, for responding because of the close of target object or the change touching caused reference signal on sensing electrode, corresponding generation the second AC signal.
Preferably, described third transistor comprises the 3rd control electrode, the 5th transmission electrode and the 6th transmission electrode, and the 3rd control electrode and sensing electrode are two electrodes, and the 3rd control electrode connects sensing electrode, or the 3rd control electrode and sensing electrode are same electrode.
Preferably, when the 3rd control electrode and sensing electrode are two electrodes, the 3rd control electrode directly connects sensing electrode, or the 3rd control electrode connects sensing electrode by resistance.
Preferably, described third transistor is field effect transistor, and the grid of described field effect transistor is used as the 3rd control electrode, and source electrode and the one in drain electrode are used as the 5th transmission electrode, another one is used as the 6th transmission electrode.
Preferably, described 5th transmission electrode is used for being connected with a current source, and the 6th transmission electrode is for transmitting the second AC signal.
Preferably, described capacitance type sensor comprises differential pair tube, and described differential pair tube is made up of the third transistor of adjacent sensing unit.
Preferably, described differential pair tube, for responding the change because of the close of target object or the caused reference signal of touch on sensing electrode, forms the second different AC signal respectively corresponding on the 6th transmission electrode of two third transistor.
Preferably, described the second different AC signal is differential current signal.
Preferably, described sensing circuit comprises the first switch element and second switch unit further; Described 5th transmission electrode is used for connecting a current source by described first switch element, and described first switch element is for controlling whether have current delivery between the 5th transmission electrode and described current source; Described second switch unit, for connecting described 3rd control electrode, controls whether to transmit described reference signal to described sensing electrode.
Preferably, described second switch unit be used on schedule interval transmission reference signal give described sensing electrode.
Preferably, described multiple sensing unit is array arrangement.
Preferably, for the third transistor of a sensing unit:
For forming differential pair tube with the third transistor of adjacent sensing unit on line direction; Or/and
For forming differential pair tube with the third transistor of adjacent sensing unit on column direction.
Preferably, the third transistor of the sensing unit that the third transistor of each sensing unit is adjacent in timesharing and line direction and column direction all forms differential pair tube.
Preferably, described capacitance type sensor comprises signal wire group further, one signal group is connected to few two sensing units, and described signal wire group comprises the first signal wire, secondary signal line and the 3rd signal wire, and first, second, third signal wire extends along column direction respectively; Described first switch element is used for connecting described current source by described first signal wire;
For be arranged in same row two adjacent sensing units: the 6th transmission electrode of the third transistor of a sensing unit is used for being connected with secondary signal line, the 6th transmission electrode of the third transistor in another sensing unit is used for being connected with the 3rd signal wire; First switch element of described two adjacent sensing units is connected with same first signal wire.
Preferably, for be positioned at same a line two adjacent sensing units: the first switch element of described two adjacent sensing units is used for being connected with same current source by the first signal wire.
Preferably, the third transistor of the sensing unit of odd-numbered line connects secondary signal line; The third transistor of the sensing unit of even number line connects the 3rd signal wire.
Preferably, described first signal wire, secondary signal line and the 3rd signal wire extend along column direction, and for same signal wire group, described secondary signal line and described 3rd signal wire are arranged in order along line direction.
Preferably, each row sensing unit connects a signal wire group, and different lines sensing unit connects different signal wire groups.
Preferably, described capacitance type sensor comprises sweep trace group further, and described sweep trace group comprises the first sweep trace and the second sweep trace, and described first switch element comprises:
The first transistor, comprise the first control electrode, the first transmission electrode and the second transmission electrode, described first control electrode is connected with the first sweep trace, for responding sweep signal that the first sweep trace transmits and corresponding the first transmission electrode and the second transmission electrode whether electric connection that controls, first transmission electrode is connected with the first signal wire, and the second transmission electrode is connected with the 5th transmission electrode; With
Transistor seconds, comprise the second control electrode, the 3rd transmission electrode and the 4th transmission electrode, wherein, second control electrode connects the second sweep trace, for responding sweep signal that the second sweep trace transmits and corresponding the 3rd transmission electrode and the 4th transmission electrode whether electric connection that controls, the 3rd transmission electrode connects the second transmission electrode, the 4th transmission electrode connection the 5th transmission electrode.
Preferably, described sweep trace group comprises three scan line and reference signal line further, and described second switch unit comprises:
5th transistor, comprise the 5th control electrode, the 9th transmission electrode and the tenth transmission electrode, wherein, 5th control electrode connects three scan line, for responding sweep signal that three scan line transmits and corresponding the 9th transmission electrode and the tenth transmission electrode whether electric connection that controls, the 9th transmission electrode connects reference signal line, the tenth transmission electrode connection the 3rd control electrode; Described sensing electrode receives reference signal by the 5th transistor from reference signal line.
Preferably, described sweep trace group comprises the 4th sweep trace further, described sensing circuit comprises the 7th transistor further, described 7th transistor comprises the 7th control electrode, the 13 transmission electrode and the 14 transmission electrode, described 7th control electrode connects the 4th sweep trace, described 13 transmission electrode connects the tenth transmission electrode, and described 14 transmission electrode connects the 3rd control electrode, and the 13 transmission electrode and the 14 transmission electrode short circuit.
Preferably, described 7th transistor is used for and described 5th transistor alternate conduction.
Preferably, the first sweep trace is for connecting the first control electrode of same a line the first transistor, and the second sweep trace is for connecting the second control electrode of same row transistor seconds; Or the first sweep trace is for connecting the first control electrode of same row the first transistor, and the second sweep trace is for connecting the second control electrode of same a line transistor seconds.
Preferably, the sensing unit with a line shares same three scan line, same 4th sweep trace and same reference signal line.
Preferably, described capacitance type sensor comprises substrate further, and described substrate is for carrying described multiple sensing unit.
Preferably, when described sensing electrode and described 3rd control electrode are two electrodes, described sensing circuit is arranged between described sensing electrode and described substrate, and arranges contact hole in the structure of described sensing circuit, and described sensing electrode is connected with described 3rd control electrode by described contact hole; When described sensing electrode and described 3rd control electrode are same electrode, described 3rd control electrode is arranged compared to the 5th transmission electrode and the contiguous described substrate of the 6th transmission electrode.
Preferably, described sensing electrode covers described sensing circuit.
Preferably, described capacitance type sensor comprises ground wire further, the homonymy of described substrate is arranged on described multiple sensing unit, described ground wire is used for load-modulate signal, do not have target object close to or touch described sensing electrode time, the modulation signal that described reference signal loads relative to described ground wire remains unchanged.
Preferably, described substrate is insulated substrate, and each transistor in described sensing circuit all adopts thin film transistor (TFT), and wherein, the grid of described thin film transistor (TFT) is used as control electrode, and source electrode and drain electrode are used separately as transmission electrode.
Preferably, described capacitance type sensor comprises conductive layer further, described conductive layer and described multiple sensing unit are arranged on relative two sides of described substrate, and described ground wire and described conductive layer are for transmitting identical modulation signal, and described modulation signal comprises ground signalling and drive singal.
Preferably, described capacitance type sensor is biometric information sensor.
Preferably, described third transistor on sensing electrode because of target object close to or the variable quantity of reference signal caused by touching change and amplify, produce the first AC signal, and the first AC signal is superimposed on one second constant DC signal, described second AC signal of corresponding generation, wherein, the half of the first constant DC signal that provides for described current source of described second constant DC signal.
The present invention also provides a kind of capacitance-type sensing device, comprise capacitance type sensor and control circuit, described control circuit performs sense operation for controlling described capacitance type sensor, wherein, described capacitance type sensor be above-mentioned in arbitrarily described capacitance type sensor, described control circuit is integrated on a chips, and described capacitance type sensor is integrated into another chips.
Preferably, described control circuit is integrated into a control chip, the integrated circuit technology that described control chip adopts formation on semiconductor substrate to include CMOS (Complementary Metal Oxide Semiconductor) transistor is made, the integrated circuit technology that described capacitance type sensor adopts formation on insulated substrate to include thin film transistor (TFT) is made, wherein, described control chip is pressed together on and is formed on the insulated substrate of capacitance type sensor.
The present invention also provides a kind of capacitive sensing system, comprise capacitance-type sensing device and power management chip, described power management chip is used for powering for described capacitance-type sensing device, wherein, described capacitive sensing device be above-mentioned in arbitrarily described capacitance-type sensing device, described control circuit comprises earth terminal, described power management chip is used for providing modulation signal for described earth terminal, described control circuit is used for providing reference signal for described capacitive transducer, wherein, described reference signal raises with the rising of described modulation signal, reduce with the reduction of described modulation signal.
The present invention also provides a kind of capacitive sensing system, comprise capacitance-type sensing device and power management chip, described power management chip is used for powering for described capacitance-type sensing device, wherein, described capacitive sensing device be above-mentioned in arbitrarily described capacitance-type sensing device, described power management chip is supplied to the supply voltage of capacitance type sensor higher than the supply voltage being supplied to the chip being integrated with control circuit.
The present invention also provides a kind of electronic equipment, comprises capacitance-type sensing device, wherein, described capacitance-type sensing device be above-mentioned in arbitrarily described capacitance-type sensing device.
The present invention also provides a kind of electronic equipment, comprises capacitive sensing system, wherein, described capacitive sensing system be above-mentioned in arbitrarily described capacitive sensing system.
Because condenser type of the present invention shows that the sensing unit of sensor comprises third transistor, third transistor is for responding on sensing electrode because of the close of target object or the change touching caused reference signal, and form the second AC signal corresponding on the 6th transmission electrode, therefore, described condenser type shows that the sensing signal that sensor exports is more stable.Correspondingly, the sensing precision comprising the capacitance-type sensing device of described capacitance type sensor is higher, the sensing precision with the capacitive sensing system of described capacitance-type sensing device is higher, has the better user experience of the electronic equipment of capacitance-type sensing device or capacitive sensing system.
Although disclose multiple embodiment, comprise its change, by illustrate and describing the following detailed description of illustrative embodiment disclosed by the invention, other embodiments disclosed by the invention will be apparent to those skilled in the art.To recognize, the present invention openly can various apparent in amendment, all modifications all can not depart from the spirit and scope of the present invention.Correspondingly, accompanying drawing and detailed description should be regarded as illustrative in essence, instead of restrictive.
Accompanying drawing explanation
Describe its example embodiment in detail by referring to accompanying drawing, feature of the present invention and advantage will become more obvious.
Fig. 1 is the schematic diagram of the first embodiment of capacitance-type sensing device of the present invention.
Fig. 2 is the electrical block diagram of capacitance-type sensing device shown in Fig. 1.
The part circuit structure schematic diagram that Fig. 3 is capacitance type sensor shown in Fig. 2.
The part circuit structure schematic diagram that Fig. 4 is capacitance-type sensing device shown in Fig. 2.
The schematic diagram of other change embodiment that Fig. 5 and Fig. 6 is sensing circuit shown in Fig. 3.
Fig. 7 is the schematic diagram of capacitance type sensor shown in Fig. 1.
The third transistor of one sensing unit and the cross-sectional view of sensing electrode of capacitance type sensor are mainly shown in Fig. 8 to Figure 11.
Figure 12 is the working timing figure of the capacitance-type sensing device shown in Fig. 2.
The part block diagram that Figure 13 is capacitance type sensor shown in Fig. 1.
Figure 14 is the schematic diagram of the second embodiment of capacitance-type sensing device of the present invention.
Figure 15 is the electrical block diagram of two sensing units adjacent on a line direction shown in Figure 14.
Figure 16 is the part circuit structure schematic diagram of the capacitance-type sensing device of Figure 14.
The frame structure schematic diagram that Figure 17 is capacitance type sensor shown in Figure 14.
Figure 18 is the schematic diagram of other change embodiment of capacitance-type sensing device of the present invention.
Figure 19 is the schematic diagram forming multiple capacitance-type sensing device on a slice glass substrate.
Figure 20 is the schematic side view of the capacitance-type sensing device shown in Figure 19.
Figure 21 and Figure 22 is the side view of other change embodiment of capacitance-type sensing device.
Figure 23 is the schematic diagram of a better embodiment of chipset of the present invention.
Figure 24 is the structural representation of the first embodiment of capacitive sensing system of the present invention.
Figure 25 is the structural representation of the second embodiment of capacitive sensing system of the present invention.
Figure 26 is the schematic diagram of encapsulating structure first embodiment of capacitance-type sensing device of the present invention.
Figure 27 and Figure 28 is the schematic diagram of other embodiment of encapsulating structure of capacitance-type sensing device of the present invention.
Figure 29 is the schematic diagram of a better embodiment of capacitance type sensing module of the present invention.
Figure 30 is the schematic diagram that the present invention arranges capacitance type sensing module below the cover sheet of electronic equipment.
Figure 31 is the partial cutaway schematic view of Figure 30 along r-r ' direction.
Figure 32 is the schematic diagram of the tft array substrate of the display device of electronic equipment.
Figure 33 is the schematic diagram of a better embodiment of electronic equipment of the present invention.
Embodiment
More fully example embodiment is described referring now to accompanying drawing.But example embodiment can be implemented in a variety of forms, and should not be understood to be limited to embodiment set forth herein; On the contrary, these embodiments are provided to make the present invention comprehensively with complete, and the design of example embodiment will be conveyed to those skilled in the art all sidedly.Conveniently or clear, the thickness of every layer shown in accompanying drawing and size may be exaggerated, omit or be schematically illustrated in and the quantity of related elements is schematically shown.In addition, the size of element not exclusively reflects actual size, and the quantity incomplete reaction actual quantity of related elements.Reference numeral identical in the drawings represents same or similar structure.
In addition, described feature, structure can be combined in one or more embodiment in any suitable manner.In the following description, provide many details thus provide fully understanding embodiments of the present invention.But one of ordinary skill in the art would recognize that, what do not have in described specific detail is one or more, or adopts other structure, constituent element etc., also can put into practice technical scheme of the present invention.In other cases, be not shown specifically or describe known features or operate to avoid fuzzy the present invention.
In describing the invention, it is to be understood that " multiple " comprise two and two or more, unless otherwise expressly limited specifically." connection " can be electrical connection, is mechanically connected, couples, directly connect and the numerous embodiments such as connection indirectly, except the following special instruction of non-invention, otherwise and is not particularly limited.In addition, words such as " first ", " second " that occur in each element title and signal name is not limit the sequencing that element or signal occur, but for convenience of element name, clearly distinguishes each element, makes to describe more succinct.
It should be noted that further: capacitance-type sensing device provided by the invention is applicable to biological information sensing device, especially fingerprint sensing device.So, the present invention is not limited to this, and the sensing device of described capacitance-type sensing device also other suitable type applicable, as touch sensing device.Described biological information sensing device is used for the predetermined biological information of sensed object object.Described target object, as the finger for user, also can be the other parts of user's body, as palm, toe, ear etc., even also can be the object of other suitable type, and be not limited to human body.Described predetermined biological information is as being fingerprint, palmmprint, ear line etc.
Described capacitance-type sensing device comprises capacitance type sensor (sensors) and control circuit.Described control circuit connects capacitance type sensor, performs sense operation for controlling described capacitance type sensor.
Preferably, described capacitance type sensor comprises sensing electrode and differential pair tube.Described sensing electrode can be coupled to target object in a capacitive manner, for loading reference signal.Described differential pair tube is associated with described sensing electrode, for responding because of the close of target object or the change touching caused reference signal on sensing electrode, and corresponding generation differential signal.
Described control circuit receives described differential signal, and obtains corresponding sensitive information according to described differential signal correspondence.Described sensitive information is as the predetermined biological information for target object.Similarly, according to differential signal, described control circuit also can know that target object is close or touch this sensitive information of capacitance-type sensing device.
The sensing signal being transferred to control circuit due to capacitance type sensor of the present invention is differential signal, described differential signal is stronger, and the impact of differential signal by the stray capacitance in capacitance-type sensing device in the process being transferred to control circuit is less, therefore, the sensitive information that described control circuit obtains according to differential signal is relatively accurate and can reduce erroneous judgement, thus can promote Consumer's Experience.
Preferably, described differential signal is differential current signal.
Preferably, described capacitance type sensor comprises multiple sensing electrode and multiple differential pair tube.The differential signal that same differential pair tube produces is the second ac current signal of same width with same frequency and reversed-phase.In addition, described differential pair tube is used for being connected with a current source, and described current source is used for providing one first constant DC signal.Described two different the second ac current signal sums are equal with the first constant DC signal that described current source provides.
Described differential pair tube is associated with described sensing electrode, wherein, described differential pair tube or be two element with described sensing electrode, described differential pair tube is connected with described sensing electrode; Or described differential pair tube comprises described sensing electrode, that is, described sensing electrode is a part for differential pair tube.
Described differential pair tube comprises two-transistor, and described two-transistor comprises a third transistor, and described third transistor comprises the 3rd control electrode, the 5th transmission electrode and the 6th transmission electrode.When described differential pair tube and described sensing electrode are two element, described 3rd control electrode is connected with described sensing electrode; When described differential pair tube comprises described sensing electrode, described 3rd control electrode and described sensing electrode are same electrode.
When described differential pair tube and described sensing electrode are two element, described 3rd control electrode is directly connected with described sensing electrode; Or described 3rd control electrode is connected with described sensing electrode by a current limiting element.Preferably, described current limiting element comprises resistance.Correspondingly, described current limiting element can play the effect of anti-ESD, protection capacitance type sensor.
Described capacitance type sensor comprises multiple sensing unit (sensor).Each sensing unit comprises sensing electrode described in.In addition, preferably, each sensing unit also comprises differential pair tube described in, or adjacent sensing unit comprises the transistor in differential pair tube described in separately.
By selecting the transistor with suitable mutual conductance, when target object close to or touch-sensing electrode time, the variable quantity of transistor to reference signal of described differential pair tube is changed and amplifies, produce the first AC signal, and the first AC signal is superimposed on one second constant DC signal, described second AC signal of corresponding generation is to control circuit.Wherein, described second constant DC signal is the half of described first constant DC signal.Correspondingly, described sensing signal is comparatively strong, and the sensing result that described control circuit obtains according to described sensing signal is more accurate.
For capacitance type sensor of the present invention: or each sensing unit exports single current signal as sensing signal; Or each sensing unit output difference sub-signal is as sensing signal; Or adjacent sensing unit output difference sub-signal is as sensing signal; Wherein, described differential signal is as known in being described further below for differential current signal, and the differential signal that described sensing unit exports also can be differential voltage signal, so, and the preferred differential current signal of described differential signal; More preferably, the sensing signal that the transistor forming differential pair tube exports is amplifying signal; Correspondingly, the sensing precision with the capacitance-type sensing device of described capacitance type sensor is higher.
Below in conjunction with accompanying drawing, the circuit structure of capacitance-type sensing device, chipset, the circuit structure of capacitive sensing system, the encapsulating structure of capacitance-type sensing device, the various embodiments of the package assembly of capacitance type sensing module and the structure of electronic equipment etc. are described.
The circuit structure of capacitance-type sensing device
Refer to Fig. 1, Fig. 1 is the schematic diagram of the first embodiment of capacitance-type sensing device of the present invention.Described capacitance-type sensing device 1, for being applied in an electronic equipment (not shown), performs sense operation.Described electronic equipment is as being the various smart machines such as mobile phone, panel computer, TV, telechiric device, intelligent door lock, Wearable.Described capacitance-type sensing device 1 comprises control circuit 11 and capacitance type sensor 13.Described control circuit 11 is connected with described capacitance type sensor 13.Described control circuit 11 performs sense operation for control capacitance formula sensor 13, and described capacitance type sensor 13 exports corresponding sensing signal to described control circuit 11.Described control circuit 11 obtains corresponding sensitive information according to described sensing signal further.
Described capacitance type sensor 13 comprises substrate 130, multiple sensing unit 131 and ground wire 133.Described ground wire 133 and described multiple sensing unit 131 are arranged on the homonymy of described substrate 130, and described ground wire 133 is arranged around each sensing unit 131.It should be noted that, the quantity of the sensing unit 131 shown in Fig. 1 is only signal, and the quantity of the sensing unit 131 of actual product can be less than or more than the quantity shown in Fig. 1.
Described multiple sensing unit 131 is connected with described control circuit 11, and for performing sense operation, output sensing signal is to control circuit 11.
In the present embodiment, described ground wire 133, for connecting the modulation ground NGND of described electronic equipment, receives modulation signal.Described modulation signal comprises ground signalling and drive singal, and described drive singal is higher than described ground signalling.Described modulation signal is as comprising the periodic square wave signal that ground signalling and drive singal alternately change.Wherein, described ground signalling is as the ground signalling on the equipment ground for electronic equipment, and the ground signalling on described equipment ground is constant voltage signal, as being 0V (volt).
Described substrate 130 is as being semiconductor substrate etc.Described semiconductor substrate is as being silicon substrate etc.
In the present embodiment, described control circuit 11 is arranged on described substrate 130, and is arranged on the homonymy of described substrate 130 with described multiple sensing unit 131.Change ground, in other embodiments, described control circuit 11 is integrated in a control chip, and described control chip is pressed together on described substrate 130.
In the present embodiment, the arrangement in array of described multiple sensing unit 131, as matrix form arrangement.So, the present invention does not limit the concrete arrangement mode of described multiple sensing unit 131, and such as, in other embodiments, described multiple sensing unit 131 also can be Else Rule mode or non-regular arrangement.
Refer to Fig. 2, Fig. 2 is the electrical block diagram of capacitance-type sensing device 1 shown in Fig. 1.It should be noted that, in fig. 2, clear in order to illustrate, 4 sensing units 131 are only shown.Described sensing unit 131 comprises sensing electrode 14 and sensing circuit 15.Described sensing electrode 14 can be coupled to target object in a capacitive manner, for loading reference signal.Described sensing circuit 15 for according to sensing electrode 14 because of target object close to or touch the change of caused reference signal, and corresponding two the second different AC signal that produce, and export described two different the second AC signal to described control circuit 11.
In present embodiment, described two different the second AC signal are differential signal, and are differential current signal.Described two different the second AC signal are such as the predetermined biological informations calculating target object, and described predetermined biological information is as being fingerprint.So, in other embodiments, described two different the second AC signal also can be differential voltage signal.
Described sensing electrode 14 adopt in metal material, metal conductive oxide material, conducing composite material, grapheme material, carbon nano-tube material any one make.
In the present embodiment, the structure of described multiple sensing unit 131 is identical.So, in other embodiments, the structure of described multiple sensing unit 131 can be different, such as, and the shape of sensing electrode 14 and varying in size.
See also Fig. 3 and Fig. 4, the part circuit structure schematic diagram that Fig. 3 is capacitance type sensor 13 shown in Fig. 2.The part circuit structure schematic diagram that Fig. 4 is capacitance-type sensing device 1 shown in Fig. 2.Below describe for a sensing unit 131 and target object is described for finger F, the structure & working mechanism of other sensing unit 131 is similar, repeats no more.Described sensing circuit 15 according on sensing electrode 14 because of finger F close to or touch the change of caused reference signal, and corresponding output sensing signal.Finger F close to or touch-sensing electrode 14 time, the fingerprint ridge of finger F or fingerprint paddy and sensing electrode 14 form coupling capacitance Cf, and described coupling capacitance Cf is with being electrically connected to the equipment of earth ground or described electronic equipment by human body impedance Z.Preferably, described coupling capacitance Cf is electrically connected the equipment ground of described electronic equipment by human body impedance Z.Be generally the negative pole of the power supply of electronic equipment described equipment.Power supply is as being battery.
Described sensing circuit 15 comprises change-over circuit 151.Described change-over circuit 151 is for responding sensing electrode 14 because of the close of finger F or the change touching caused reference signal, and the second AC signal that corresponding generation two is different.
In the present embodiment, described change-over circuit 151 change sensing electrode 14 because of finger F close to or the variable quantity that touches caused reference signal be two the first different AC signal, and superpose on identical the second constant DC signal of described two different the first AC signal respectively to one, correspondingly produce described two different the second AC signal.Wherein, two different the first AC signal are differential current signal.
Preferably, described change-over circuit 151 comprises differential pair tube D.Described differential pair tube D responds sensing electrode 14 because of the close of finger F or the change touching caused reference signal, and correspondence produces two the second different AC signal.
Described differential pair tube D comprises third transistor T3 and the 4th transistor T4.Described third transistor T3 comprises the 3rd control electrode C3, the 5th transmission electrode S5 and the 6th transmission electrode S6.Described 6th transmission electrode S6 is for transmitting one second AC signal.In the present embodiment, described 3rd control electrode C3 and described sensing electrode 14 are two electrodes, and described 3rd control electrode C3 directly connects described sensing electrode 14.So, in other embodiments, see Fig. 5, described 3rd control electrode C3 also connects described sensing electrode 14 by current limiting element L, and described current limiting element L comprises resistance R, plays the effect of anti-ESD.In addition, described 3rd control electrode C3 and described sensing electrode 14 also can be same electrode.
Described 4th transistor T4 comprises the 4th control electrode C4, the 7th transmission electrode S7 and the 8th transmission electrode S8.Described 7th transmission electrode S7 connects described 5th transmission electrode S5.Described 7th transmission electrode S7 and described 5th transmission electrode S5 are further used for being connected with a current source 111.Described current source 111 is for providing the first constant DC signal, and described first constant DC signal is two times of the second constant DC signal, and the size as the first constant DC signal is I, then the size of the second constant DC signal is (I/2).Preferably, define a node N between described 7th transmission electrode S7 and described 5th transmission electrode S5, described differential pair tube D connects described current source 111 by described node N.Described 8th transmission electrode S8 is for transmitting another the second AC signal.
3rd control electrode C3 is for loading the first reference signal, and the 4th control electrode C4 is for loading the second reference signal.Correspondingly, when the 3rd control electrode C3 and described sensing electrode 14 are same electrode, or when the 3rd control electrode C3 directly connects described sensing electrode 14, the reference signal that described sensing electrode 14 loads also is the first reference signal.It should be noted that, when the 3rd control electrode C3 is connected with sensing electrode 14 by current limiting element L, the reference signal that described sensing electrode 14 loads is different from the first reference signal that described 3rd control electrode C3 loads.
Preferably, the first reference signal that described 3rd control electrode C3 receives is identical with the second reference signal that described 4th control electrode C4 receives, that is, described differential pair tube D receives common-mode signal input.So, the second reference signal that the first reference signal that described 3rd control electrode C3 receives receives with described 4th control electrode C4 also can differ certain difference, as 0.05V (volt), 0.1V (volt) etc., the first reference signal is still considered as identical with the second reference signal.Be activated at sensing unit 131 in the process performing sensing, described 3rd control electrode C3 and described 4th control electrode C4 are respectively used to that interval (as periodicity) is corresponding on schedule loads the first reference signal and the second reference signal at every turn.Defining the period that the 3rd control electrode C3 and described 4th control electrode C4 receives the first reference signal and the second reference signal is charge period, comprises the sensing period in the period often between adjacent two charge period.In the sensing period, the first reference signal is stopped and is transferred to the 3rd control electrode C3, and the second reference signal is stopped the described 4th control electrode C4 of transmission, and described sensing cell 131 performs sensing.
In the present embodiment, described first reference signal and the second reference signal are modulated voltage signal.
In the sensing period, all stray capacitance is there is due to the 3rd control electrode C3 and between the 4th control electrode C4 and ground wire 133, when do not have finger close to or touch-sensing electrode 14 time, described first reference signal keeps relatively constant with the signal on the relative described ground wire 133 of described second reference signal; When have finger close to or touch-sensing electrode 14 time, the signal on the relatively described ground wire 133 of described first reference signal changes, and signal on the relatively described ground wire 133 of described second reference signal keeps relatively constant.
Particularly, when pointing close or touch-sensing electrode 14, described third transistor T3 changes the variable quantity of the reference signal on sensing electrode 14 into the first AC signal i, and load described first AC signal i on one second constant DC signal, thus on the 6th transmission electrode S6 formation second AC signal (I/2)+i.Correspondingly, by the component properties of differential pair tube D, described 4th transistor T4 changes the variable quantity of the reference signal on sensing electrode 14 into the first AC signal (-i), and load described first AC signal (-i) on one second constant DC signal, thus on the 8th transmission electrode S8 formation second AC signal (I/2)-i.Described 2 second AC signal (I/2)+i, (I/2)-i sum are equal with the size I of described first constant DC signal.Also namely, described differential pair tube D responds the change of the first reference signal R1 and corresponding generation exports from second AC signal of current source 111 to the six transmission electrode S6 and the 8th transmission electrode S8.
It should be noted that, by selecting the differential pair tube D with suitable mutual conductance, described first AC signal can by amplification in various degree, and therefore, relative to the variable quantity of reference signal or the variable quantity of electricity, the first AC signal is stronger.Correspondingly, according to the first AC signal entrained in the second AC signal is next corresponding, described control circuit 11 knows that the information in fingerprint of finger is then more accurate.Especially for differential pair tube D, described control circuit 11 carries out additive operation to receive two different second AC signal, can obtain first AC signal of two times, further increase the intensity of signal.
Preferably, described sensing circuit 15 comprises the first switch element K1 further.Described first switch element K1 is connected between described node N and described current source 111, for controlling whether carry out current delivery between described differential pair tube D and described current source 111.
Described first switch element K1 comprises the first transistor T1.Described the first transistor T1 comprises the first control electrode C1, the first transmission electrode S1 and the second transmission electrode S2.Described first control electrode C1 to control between the first transmission electrode S1 and the second transmission electrode S2 whether conducting for responding one scan signal correspondence.First transmission electrode S1 is for connecting described current source 111.Second transmission electrode S2 is for connecting described node N.
Preferably, described first switch element K1 comprises transistor seconds T2 further.Described transistor seconds T2 comprises the second control electrode C2, the 3rd transmission electrode S3 and the 4th transmission electrode S4.Described second control electrode C2 to control between the 3rd transmission electrode S3 and the 4th transmission electrode S4 whether conducting for responding one scan signal correspondence.3rd transmission electrode S3 is for connecting the second transmission electrode S2.4th transmission electrode S4 is for connecting described node N.Transistor seconds T2 and the first transistor T1 forms secondary switch.In the present embodiment, which which form secondary switch to be more conducive to control circuit 11 and to control or sensing unit 131 flexibly and be activated, in addition, after also can illustrate, the position of sensing unit 131 can be determined according to position relationship between the sweep trace be connected with described secondary switch.Change ground, in other embodiments, described first switch element K1 also can only comprise the first transistor T1.Further, described first switch element K1 also non-limitingly comprises the first transistor T1 and transistor seconds T2, also can comprise the on-off element of other suitable type.Further, described first switch element K1 also can be arranged in control circuit 11, but not in sensing unit 131, even, described first switch element K1 also can be omitted, and accordingly, arranges the first similar switch element K1 and be also fine between sensing electrode 14 and control circuit 11.
More preferably, described sensing circuit 15 comprises second switch unit K2 further.Described second switch unit K2 is used for controlling whether transmit the first reference signal and whether transmits the second reference signal to the 4th control electrode C4 to the 3rd control electrode C3 and control.Because differential pair tube D is associated with sensing electrode 14, therefore, the second control module K2 correspondence controls whether transmission of reference signals is to described sensing electrode 14.
Preferably, described second switch unit K2 comprises the 5th transistor T5 and the 6th transistor T6.
Described 5th transistor T5 comprises the 5th control electrode C5, the 9th transmission electrode S9 and the tenth transmission electrode S10.Wherein, the 5th control electrode C5 corresponding controls the 9th transmission electrode S9 and the tenth transmission electrode S10 whether conducting for responding one scan signal.9th transmission electrode S9 is for receiving the first reference signal.Tenth transmission electrode S10 connects the 3rd control electrode C3.
Described 6th transistor T6 comprises the 6th control electrode C6, the 11 transmission electrode S11 and the 12 transmission electrode S12.Wherein, the 6th control electrode C6 corresponding controls the 11 transmission electrode S11 and the 12 transmission electrode S12 whether conducting for responding one scan signal.11 transmission electrode is for receiving the second reference signal.12 transmission electrode S12 connects the 4th control electrode C4.
Change ground, in other embodiments, described second switch unit K2 also can be arranged in control circuit 11, but not in sensing unit 131.In addition, second switch unit K2 also non-limitingly comprises the 5th transistor T5 and the 6th transistor T6, also can be the on-off element comprising other suitable type.
More preferably, described sensing circuit 15 comprises the first compensating unit M1 and the second compensating unit M2 further.Described first compensating unit M1 is arranged between the tenth transmission electrode S10 and the 3rd control electrode C3, for compensating voltage when the 5th transistor T5 closes between the tenth transmission electrode S10 and the 3rd control electrode C3.Described second compensating unit M2 is arranged between the 12 transmission electrode S12 and the 4th control electrode C4, for compensating voltage when the 6th transistor T6 closes between the 12 transmission electrode S12 and the 4th control electrode C4.
Preferably, described first compensating unit M1 comprises the 7th transistor T7.Described 7th transistor T7 comprises the 7th control electrode C7, the 13 transmission electrode S13 and the 14 transmission electrode S14.Wherein, the 7th control electrode C7 controls the 13 transmission electrode S13 and the 14 transmission electrode S14 whether conducting for responding one scan signal.13 transmission electrode S13 connects the tenth transmission electrode S10.14 transmission electrode S14 connects the 3rd control electrode C3.13 transmission electrode S13 and the 14 transmission electrode S14 short circuit.
Described second compensating unit M2 comprises the 8th transistor T8.Described 8th transistor T8 comprises the 8th control electrode C8, the 15 transmission electrode S15 and the 16 transmission electrode S16.Wherein, the 8th control electrode C8 controls the 15 transmission electrode S15 and the 16 transmission electrode S16 whether conducting for responding one scan signal.15 transmission electrode S15 connects the 12 transmission electrode S12.16 transmission electrode S16 connects the 4th control electrode C4.15 transmission electrode S15 and the 16 transmission electrode S16 short circuit.
7th transistor T7 is used for and the 5th transistor T5 alternate conduction, and the 7th transistor T7 of conducting compensates the voltage between the 3rd control electrode C3 and the tenth transmission electrode S10 when the 5th transistor T5 ends; 8th transistor T8 is used for and the 6th transistor T6 alternate conduction, and the 8th transistor T8 of conducting compensates the voltage between the 4th control electrode C4 and the 12 transmission electrode S12 when the 6th transistor T6 ends.
It should be noted that, whether 7th transistor T7 and the 8th transistor T8 conducting to be described herein, refer to the 7th control electrode C7 and the 8th control electrode C8 responding scanning signal and correspondingly control the 7th transistor T7 and the 8th transistor T8 conducting respectively respectively, but not the 13 transmission electrode S13 of the 7th transistor T7 and the 14 transmission electrode S14 short circuit and conducting between the 13 transmission electrode S13 and the 14 transmission electrode S14, the 15 transmission electrode S15 of non-8th transistor T8 and the 16 transmission electrode S16 short circuit and conducting between the 15 transmission electrode S15 and the 16 transmission electrode S16.
Change ground, in other embodiments, described first compensating unit M1 and the second compensating unit M2 can be omitted.In addition, described first compensating unit M1 and the second compensating unit M2 also non-limitingly comprises the 7th transistor T7 and the 8th transistor T8 respectively, also can comprise the on-off element of other suitable type.
In order to avoid leakage current, for the part or all of transistor in sensing circuit 15, for the first transistor T1, the transistor be in series with each transistor can be comprised further, as shown in Figure 6.
In described sensing circuit 15 first to the 8th transistor T1 ~ T8 adopts any one or combinations several arbitrarily in thin film transistor (TFT), bipolarity triode and metal oxide semiconductor field effect tube.
Described thin film transistor (TFT) comprises the combination of any one or two kinds in N-type TFT, P-type TFT.
Described thin film transistor (TFT) comprises any one or combinations several arbitrarily in amorphous silicon film transistor, low-temperature polysilicon film transistor, high temperature polysilicon silicon thin film transistor, metal oxide thin-film transistor.
When the transistor in sensing circuit 15 adopts thin film transistor (TFT), the grid of described thin film transistor (TFT) is used as control electrode, and source electrode and drain electrode are used separately as transmission electrode; When the transistor in sensing circuit 15 adopts bipolarity triode, the base stage of described bipolarity triode is used as control electrode, and collector and emitter are used separately as transmission electrode; When the transistor in sensing circuit 15 adopts metal oxide semiconductor field effect tube, the grid of described metal oxide semiconductor field effect tube is used as control electrode, and source electrode and drain electrode are used separately as transmission electrode.
Please consult Fig. 2 and Fig. 3 in the lump again, described capacitance type sensor 13 comprises multiple sweep trace group G1, multiple signal wire group G2 and many reference signal line R further.Wherein, described sweep trace group G1 is for transmitting scanning-line signal to described multiple sensing unit 131.Described signal wire group G2 is used for transmission current signal between described multiple sensing unit 131 and described control circuit 11.Described many reference signal line R are for transmitting the first reference signal and the second reference signal to described multiple sensing unit 131.
One signal wire group G2 connects at least two sensing units 131.Scan line group G1 connects at least two sensing units 131.Preferably, in the present embodiment, each signal wire group G2 connects a row sensing unit 131.Different lines sensing unit 131 connects unlike signal line-group group G2.One signal wire group G2 is set between adjacent two row sensing units 131.
Described signal wire group G2 comprises the first signal wire G21, secondary signal line G22 and the 3rd signal wire G23.For each signal wire group G2: described first signal wire G21, secondary signal line G22 and the 3rd signal wire G23 extend along column direction, and described first signal wire G21, secondary signal line G22 and the 3rd signal wire G23 arrange in the row direction successively.Further, the first transmission electrode S1 of the first transistor T1 of the sensing unit 131 of same row connects same first signal wire G21.The 6th transmission electrode S6 of the third transistor T3 of the sensing unit 131 of same row connects same secondary signal line G22.8th transmission electrode S8 of the 4th transistor of the sensing unit 131 of same row connects same 3rd signal wire G23.Described first signal wire G21 is further used for being connected with current source 111, transmits described first constant DC signal.Described secondary signal line G22 and described 3rd signal wire G23 are further used for being connected with a treatment circuit 113.Described secondary signal line G22 and described 3rd signal G23 parallel transmission current signal between described sensing unit 131 and described treatment circuit 113.When have finger close to or touch-sensing electrode 14 and cause the change of reference signal time, described secondary signal line G22 and described 3rd signal G23 parallel transmission second AC signal between described sensing unit 131 and described treatment circuit 113; When do not have finger close to or touch-sensing electrode 14 time, described secondary signal line G22 and described 3rd signal G23 parallel transmission second constant DC signal between described sensing unit 131 and described treatment circuit 113.
Described sweep trace group G1 comprises the first sweep trace G11, the second sweep trace G12, three scan line G13 and the 4th sweep trace G14.First sweep trace G11 and the second sweep trace G12 insulate cross arrangement.In the present embodiment, described second sweep trace G12, three scan line G13 and the 4th sweep trace G14 extend all in the row direction, and described first sweep trace G11 extends along column direction.Particularly, the first control electrode C1 of the first transistor T1 of the sensing unit 131 of same row connects same first sweep trace G11.The second control electrode C2 with the transistor seconds T2 of the sensing unit 131 of a line connects same second sweep trace G12.The 5th control electrode C5 with the 5th transistor T5 of the sensing unit 131 of a line connects same three scan line G13.The 7th control electrode C7 with the 7th transistor T7 of the sensing unit 131 of a line connects same 4th sweep trace G14.The 8th control electrode C8 with the 8th transistor T8 of the sensing unit 131 of a line connects same 4th sweep trace G14.
Preferably, same three scan line G13 is connected to the 5th control electrode C5 of the 5th transistor T5 of the sensing unit 131 of a line and the 6th control electrode C6 short circuit of the 6th transistor T6.Be connected to same 4th sweep trace G14 with the 7th control electrode C7 of the 7th transistor T7 of the sensing unit 131 of a line and the 8th control electrode C8 short circuit of the 8th transistor T8.
Described first sweep trace G11, the second sweep trace G12, three scan line G13 are connected with scan driving circuit 115 further with the 4th sweep trace G14, receive the sweep signal from described scan drive circuit 115.
Change ground, in other embodiments, the first control electrode C1 with the first transistor T1 of the sensing unit 131 of a line connects the second sweep trace G12, and the second control electrode C2 of the transistor seconds T2 of the sensing unit 131 of same row connects the first sweep trace G11.Or, the location swap of the first sweep trace G11 and the second sweep trace G12, the first control electrode C1 with the first transistor T1 of the sensing unit 131 of a line connects the first sweep trace G11, and the second control electrode C2 of the transistor seconds T2 of the sensing unit 131 of same row connects the second sweep trace G12.
Because the first sweep trace G11 and the second sweep trace G12 insulate arranged in a crossed manner, therefore, according to the position relationship of the first sweep trace G11 and the second sweep trace G12, described control circuit 11 can know the position of each sensing unit 131.In addition, by arranging secondary switch, described control circuit 11 is also conducive to carrying out blocked scan to described multiple sensing unit 131.
Described many reference signal line R extend in the row direction.Described 9th transmission electrode S9 connects a reference signal line R.Described tenth transmission electrode S10 connects a reference signal line R.Preferably, same reference signal line R is connected to the tenth transmission electrode S10 phase short circuit with the 9th transmission electrode S9 of a line sensing unit 131, correspondingly, the first reference signal of the 3rd control electrode C3 reception is identical with the second reference signal that the 4th control electrode C4 receives.Relatively, when the 9th transmission electrode S9 of same a line sensing unit 131 connects different reference signal line R from the tenth transmission electrode S10, the first reference signal that 3rd control electrode C3 receives can be selected slightly different from the second reference signal that the 4th control electrode C4 receives, but the two is still considered as identical.Described many reference signal line R are further used for being connected with a reference signal generation circuit 117, receive the first reference signal from described reference signal generation circuit 117 and the second reference signal.
In the present embodiment, the second sweep trace G12, three scan line G13 and the 4th sweep trace G14 and reference signal line R in scan line group G1 is connected with the sensing unit 131 of a line.The second sweep trace G12, three scan line G13 and the 4th sweep trace G14 and reference signal line R in scan line group G1 is set between adjacent two row sensing units 131.
Refer to Fig. 7, Fig. 7 touches the schematic diagram of capacitance type sensor 13 shown in Fig. 1 for finger F.Please consult Fig. 1 and Fig. 2 in the lump, described sensing electrode 14 is arranged on than the position of described sensing circuit 15 closer to finger F simultaneously.In the present embodiment, described sensing circuit 15 is arranged between described sensing electrode 14 and described substrate 130, and contact hole (see following) is set in the structure of described sensing circuit 15, described sensing electrode 15 is connected with described 3rd control electrode C3 by described contact hole.Preferably, described sensing electrode 14 matches with ground wire 133 and covers sensing circuit 15, sweep trace group G1, reference signal line R and signal wire group G2 substantially completely, thus avoid when target object touch sensing circuit 15, sweep trace group G1, reference signal line R or signal wire group G2 time and cause the interference to sensing signal.In addition, the sensing electrode 14 of described each sensing unit 131 is preferably coplanar with layer.
Refer to Fig. 8 to Figure 11, the third transistor T3 of a sensing unit 131 and the cross-sectional view of sensing electrode 14 of capacitance type sensor 13 are mainly shown in Fig. 8 to Figure 11.Wherein, the third transistor T3 shown in Fig. 8 is low-temperature polysilicon film transistor.Described low-temperature polysilicon film transistor is single top-gate thin-film transistors.Described sensing circuit 15 is included on substrate 130 and forms the first insulation course 141, be formed in the active channel 142 and 143 on the first insulation course 141, source electrode 144 and drain electrode 145, be formed in the second insulation course 146 in active channel 142 and 143, source electrode 144 and drain electrode 145, be formed in the grid 147 on the second insulation course 146, be formed in the 3rd insulation course 148 on grid 147, run through the 3rd insulation course 148 until contact hole (sign) above grid 147, and be formed in the sensing electrode 14 above described 3rd insulation course 148.Described sensing electrode 14 is connected with described grid 147 by described contact hole.Wherein, third transistor T3 comprises active channel 142 and 143, source electrode 144, drain electrode the 145, second insulation course 146 and grid 147.
Third transistor T3 shown in Fig. 9 is bottom gate thin film transistor.Described sensing circuit 15 is included on substrate 130 and forms the first insulation course 141, be formed in the grid 147 on the first insulation course 141 and going between L of being connected with grid 147, be formed in the second insulation course 146 on grid 147 and the first insulation course 141, be formed in the active layer 149 on the second insulation course 146, be formed in source electrode 144 and the drain electrode 145 of active layer 149 both sides, with be formed in source electrode 144, three insulation course 148 of drain electrode 145 and second on insulation course 146, run through the contact hole of the 3rd insulation course 148 and the second insulation course 146, with the sensing electrode 14 be formed in above the 3rd insulation course 148.Wherein, described lead-in wire L extends to the position of described contact hole from the side of grid 147, described sensing electrode 14 connects described grid 147 by described contact hole.Described third transistor T3 comprises grid 147, second insulation course 146, active layer 149, source electrode 144 and drain electrode 145.Described active layer 149 is as being silicon island layer or metal oxide layer (IGZO).Described lead-in wire L is identical with the material of described grid 147, and itself and described grid 147 are structure as a whole.
Third transistor T3 shown in Figure 10 is inverted bottom gate thin film transistor.The grid of third transistor T3 is used as sensing electrode 14 further.As long as the structure shown in Fig. 9 is inverted, opposite side relative with the side arranging sensing unit 131 on substrate 130 is formed screen layer 40, cover the region except grid 23, and without the need to forming contact hole on the second insulation course 146 and the 3rd insulation course 148, without the need to forming lead-in wire L.Change ground, except opposite side relative with the side arranging sensing unit 131 on substrate 130 forms screen layer 40, cover the mode in the region except grid 23, the surrounding edge of grid 23 also can be selected to extend cover sensing circuit 15.Visible, when described sensing electrode 14 is same electrode with described 3rd control electrode C3, described 3rd control electrode C3 is arranged compared to the contiguous described substrate 130 of the 5th transmission electrode S5 and the 6th transmission electrode S6.
Third transistor T3 shown in Figure 11 is Double Tops grid low-temperature polysilicon film transistors.Similar with the sensing unit 131 shown in Fig. 8, the insulation course 148 on a grid 147 of third transistor T3 forms contact hole, sensing electrode 14 is connected with grid 147.Herein, the structure for third transistor T3 repeats no more.
As shown in the above, described capacitance type sensor 13 respond sensing electrode 14 because of target object close to or touch the change of caused reference signal and the corresponding differential current signal that produces, and provide differential current signal to control circuit 11, therefore, the sensing signal that exports of capacitance type sensor 13 of the present invention is comparatively strong and stability is higher.
Change ground, in other embodiments, at the 6th transmission electrode S6 and a resistance that the 8th transmission electrode S8 connects respectively, and draw two signal line respectively between differential pair tube D and each resistance, thus the corresponding differential voltage signal that gathers also is fine as sensing signal.
Referring again to Fig. 1 to Fig. 3, the circuit structure of capacitance-type sensing device 1 is described as follows.
Preferably, described control circuit 11 comprises an earth terminal 110, described current source 111, described treatment circuit 113, described scan drive circuit 115, described reference signal generation circuit 117 and sequential control circuit 119.Described sequential control circuit 119 is at least connected with described scan drive circuit 115, exports the sequential of each sweep signal for controlling described scan drive circuit 115.
In the present embodiment, described earth terminal 110, for connecting the modulation ground NGND of described electronic equipment, receives described modulation signal.Described earth terminal 110 and ground wire 133 transmit described modulation signal, thus, ground signalling is in compared to described modulation signal, when described modulation signal is in drive singal, the driving intensity that described control circuit 11 is transferred to the signal of capacitance type sensor 13 uprises, when being fingerprint sensing device for capacitance-type sensing device 1, and then more easily can sense fingerprint image.
So, in other embodiments, described earth terminal 110 and described ground wire 133 are all for being connected the equipment ground of described electronic equipment, and receive the ground signalling from equipment ground, described ground signalling is constant voltage signal.Correspondingly, described first reference signal and described second reference signal are constant voltage signal.
Described current source 111 is connected with the first signal wire G21, for providing described first constant DC signal.
Described reference signal generation circuit 117 is connected with described many reference signal line R, for providing described first reference signal and described second reference signal.
Described scan drive circuit 115 is connected with described each sweep trace group G1, for providing sweep signal to each article of the first sweep trace G11, each article of the second sweep trace G12, each article of three scan line G13 and each article of the 4th sweep trace G14.
Described treatment circuit 113 and secondary signal line G22 and the 3rd signal wire G23 parallel join, for receiving the sensing signal exported from described multiple sensing unit 131, after described sensing signal is changed and amplifying process, then calculate the associated sensed information of target object according to the sensing signal after process.
Particularly, when sensing signal is the second AC signal and is current signal, described treatment circuit 113 changes the second AC signal into corresponding ac voltage signal, and the ac voltage signal after conversion is amplified, the associated sensed information of target object is calculated according to the ac voltage signal amplified; Or described treatment circuit 113 amplifies the second AC signal received, and the second AC signal changed after amplification is corresponding ac voltage signal, calculates the associated sensed information of target object according to the ac voltage signal amplified.Described treatment circuit 113 carries out subtraction to through conversion and the ac voltage signal after amplifying further, and knows the associated sensed information of target object according to the signal obtained after computing.
Due to for for fingerprint sensing device, described sensing unit 131 is more, single pass a line sensing unit 131 needs more treatment circuit 113 and current source 111, therefore, for the capacitance-type sensing device 1 of such as fingerprint sensing type of device, inventor finds that the mode of employing time-sharing multiplex treatment circuit circuit 113 and current source 111 can be relatively good, correspondingly, described control circuit 11 comprises the 3rd switch element K3 (see Fig. 2) further, described 3rd switch-linear hybrid is in current source 111, between treatment circuit 113 and described multiple sensing unit 131, for switching described treatment circuit 113, connection between current source 111 and sensing unit 131.So, adopt secondary switch and in conjunction with the first sweep trace G11, connection between the second sweep trace G12 and sensing unit 21 and arrange relation, described control circuit 11 can be conducive to blocked scan is carried out to described capacitance type sensor 13.Correspondingly, e.g., a current source 111 is set without the need to each row sensing unit 131 corresponding, is switched by the control of the 3rd switch element K3, with a line sensing unit 131 time-sharing multiplex described in current source 111.Similarly, treatment circuit 113 is suitable for too.Wherein, the 3rd switch element K3 comprises multiple gauge tap K31.Described 3rd switch element K3 is connected with sequential control circuit 119, and whether sequential control circuit 119 for controlling the closedown of the multiple gauge tap K31 in the 3rd switch element K3.So, in other embodiments, described control circuit 11 can comprise a control module further and works to replace sequential control circuit 119 to control the 3rd switch element K3.
Certainly, if treatment circuit 113 and current source 111 more, or, the negligible amounts of sensing unit 131, without the need to the sensing unit 131 points of every a line at least twice sweep time, described first switch element K1 comprises a transistor, described sweep trace group G1 comprises one in the first sweep trace G11 and the second sweep trace G12.
See also Figure 12, Figure 12 is the working timing figure of the capacitance-type sensing device 1 shown in Fig. 2.In order to each signal of clear differentiation, in Figure 12, corresponding sign is all done to each signal, the first constant DC signal provided as current source 111 adopts I1 to indicate, and the current signal that secondary signal line G22 and the 3rd signal wire G23 exports adopts I2 and I3 to carry out indicating etc. respectively.What need again to illustrate is, in other embodiments, described capacitance-type sensing device 1 is in the process of work, described ground wire 133, described earth terminal 110 can always connection device ground, so, in the present embodiment, preferably, described ground wire 133 receives modulation signal M, first reference signal R1 and the second reference signal R2 is the signal modulated through modulation signal M, thus described first reference signal R1 and described second reference signal R2 raises with the rising of described modulation signal M, reduces with the reduction of described modulation signal M.Because described modulation signal M comprises the drive singal W higher than ground signalling G; therefore; the reference signal that described sensing electrode 14 loads (namely; first reference signal R1) relatively raised when described modulation signal M is in drive singal W; thus improve driving force; and then; when described capacitive device 1 is such as fingerprint sensing device; time it is arranged on below the cover sheet (coverlens) of electronic equipment, also more easily can sense the fingerprint image of user.
So, the present invention non-limiting ground wire 133, earth terminal 110 receive modulation signal M, change ground, in other embodiments, capacitance type sensor 13 and control circuit 11 include as power end, voltage difference between described power end and described ground wire 133 (earth terminal 110) is the power supply of capacitance type sensor 13 (control circuit 11), and described power end is for receiving modulation signal M.In addition, described modulation signal M also and non-limitingly comprise ground signalling G and drive singal W, in other embodiments, described modulation signal M also can comprise the square-wave signal that negative voltage and positive voltage are formed, or the square-wave signal that ground signalling and negative voltage are formed, or the ladder square-wave signal of multiple voltage formation etc., preferably, when control circuit 15 adopts positive level driving sensing electrode 14 in advance, the drive singal W of preferred modulation signal M is positive level, relatively, when control circuit 15 adopts negative level driving sensing electrode 14 in advance, the drive singal W of preferred modulation signal M is negative level.In addition, modulation signal M also can adopt sinusoidal wave grade for other suitable waveform signal except adopting square-wave signal.
Due to the negligible amounts of the sensing unit 131 shown in Fig. 2, in order to embody blocked scan, see also Figure 13, the part block diagram that Figure 13 is capacitance type sensor 13 shown in Fig. 1.Multiple sensing units 131 shown in Figure 13 have been divided into 4 regions, are respectively B1, B2, B3 and B4.Described control circuit 11 scans successively to described 4 regions B1, B2, B3 and B4.So, the present invention is not limited to aforementioned scan mode, also can be other scan mode, as change each region B1, B2, B3 and B4 scanning sequency, also can be varied for the division of scanning area etc.
In addition, in principles illustrated below, be the time performing scanning for every a line sensing unit 131 of each region B1, B2, B3 and B4 be T, described time T comprises two charge period t1 and t3 and two sensing period t2 and t4 and be described.So, described capacitance-type sensing device 1 is in the process of real work, and the time T that every a line sensing unit 131 of each region B1, B2, B3 and B4 performs scanning comprised more than multiple charge period of two charge period t1 and t3 and the multiple sensing periods more than two sensing period t2 and t4.
The principle of work of described capacitance-type sensing device 1 is as follows:
In sweep time T, current source 111 is connected with the sensing unit 131 in the B1 of region by the 3rd switch element K3 with treatment circuit 113.Current source 111 provides the first constant DC signal I1, and size is I.
In sweep time T, described earth terminal 110 and ground wire 133 receive modulation signal M.Preferably, described modulation signal M comprises drive singal W at sensing period t2 and t4, is ground signalling G at charge period t1 and t3.
In sweep time T, described reference signal generation circuit 117 provides the first reference signal R1, the second reference signal R2 respectively to the reference signal line R be connected with the 9th transmission electrode S9 and the reference signal line R be connected with the 11 transmission electrode S11.Wherein, the first reference signal R1, the second reference signal R2 change with the change of modulation signal M, and modulated signals M modulates.
In sweep time T, described scan drive circuit 115 provides the first level H1 of the first sweep signal Y1 to the first sweep trace G11 be connected with the first row sensing unit 131 in the B1 of region and the second sweep trace G12.Wherein, described first sweep signal Y1 changes with the change of modulation signal M, and modulated signals M modulates.Correspondingly, the first transistor T1 and the transistor seconds T2 that are arranged in region B1 the first row sensing unit 131 are switched on, and described sensing unit 131 is activated.
At charge period t1, described scan drive circuit 115 provides the first level H1 of the second sweep signal Y2 to the three scan line G13 be connected with the first row sensing unit 131 in the B1 of region.Meanwhile, described scan drive circuit 115 provides the second electrical level H2 of the 3rd sweep signal Y3 to the 4th sweep trace G13 be connected with the first row sensing unit 131 in the B1 of region.Correspondingly, in the region B1 be connected with three scan line G13, the 5th transistor T5, the 6th transistor T6 of the first row sensing unit 131 is switched on, in the region B1 be connected with the 4th sweep trace G14, the 7th transistor T7, the 8th transistor T8 of the first row sensing unit 131 is cut off, thus, first reference signal R1 is transferred to the 3rd control electrode C3 by the 13 transmission electrode S13, the 14 transmission electrode S14 of phase short circuit in the 5th transistor T5 of conducting and the 7th transistor T7 of cut-off, charges to sensing electrode 14 and the 3rd control electrode C3; Second reference signal R2 is transferred to the 4th control electrode C4 by the 15 transmission electrode S15, the 16 transmission electrode S16 of phase short circuit in the 6th transistor T6 of conducting and the 8th transistor T8 of cut-off, charges to the 4th control electrode C4.If the signal that the 6th transmission electrode S6 exports is I2, the signal that the 8th transmission electrode S8 exports is I3, and accordingly, recharge here period t1, and described signal I2 and I3 is the second constant DC signal, and size is I/2.
At sensing period t2, described scan drive circuit 115 provides the second electrical level H2 of the second sweep signal Y2 to the three scan line G13 be connected with the first row sensing unit 131 in the B1 of region.Meanwhile, described scan drive circuit 115 provides the first level H1 of the 3rd sweep signal Y3 to the 4th sweep trace G13 be connected with the first row sensing unit 131 in the B1 of region.Correspondingly, 5th transistor T5 of the first row sensing unit 131 in the region B1 be connected with three scan line G13, 6th transistor T6 is cut off, 7th transistor T7 of the first row sensing unit 131 in the region B1 be connected with the 4th sweep trace G14, 8th transistor T8 is switched on, thus, described sensing electrode 14 may be used for performing sense operation, in addition, 7th transistor T7 of conducting compensates the voltage between the tenth transmission electrode S10 and the 3rd control electrode C3, 8th transistor T8 of conducting compensates the voltage between the 12 transmission electrode S12 and the 4th control electrode C4.
Can find out, at this sensing period t2, the drive singal W of the first sweep signal Y1, the second sweep signal Y2, the 3rd sweep signal Y3, the first reference signal R1 and the equal modulated signals M of the second reference signal R2 raises, and the first reference signal R1 relative modulation signal M does not change.Correspondingly, the signal I2 that exports of the 6th transmission electrode S6 and the signal I3 that exports of the 8th transmission electrode S8 remains unchanged.Secondary signal line G22 transmit second constant DC signal I2 and I3 corresponding to the 3rd signal wire G23 is to treatment circuit 113.Described treatment circuit 113 according to described second constant DC signal I2 know do not have target object close to or touch this sensing electrode 14.
It should be noted that, if do not arrange the 7th transistor T7, when the 5th transistor T5 ends, charge carrier (electronics or the hole at the tenth transmission electrode S10 place, determine according to the type of the 5th transistor T5) impact can be had on the voltage of the 3rd control electrode C3, relatively, when arranging the 7th transistor T7, 7th transistor T7 of conducting can absorb described charge carrier or discharge the charge carrier (specifically according to the type selecting of five transistor T5) electrically contrary with described charge carrier when the 5th transistor T5 ends, thus keep the voltage relative modulation signal M at the 3rd control electrode C3 place to remain unchanged.Similarly, the 8th transistor T8 is set, remains unchanged to keep the voltage relative modulation signal M at the 4th control electrode C4 place.
At charge period t3, similar or identical with the charging principle of charge period t1, the first reference signal R1 is supplied to the 3rd control electrode C3 again, charges to the 3rd control electrode C3; Second reference signal R2 is supplied to the 4th control electrode C4 again, charges to the 4th control electrode C4.Recharge here period t3, and described signal I2 and I3 is the second constant DC signal, and size is I/2.
At sensing period t4, similar or identical with the principle of work of sensing period t2, only, first reference signal R1 relative modulation signal M changes, correspondingly, described differential pair tube D corresponds to the 6th transmission electrode S6 and the 8th transmission electrode S8 and forms two different the second AC signal (I/2)+i, (I/2)-i, and respectively by secondary signal line G22 and the 3rd signal wire G23 parallel transmission to treatment circuit 113.Described treatment circuit 113 according to described second AC signal (I/2)+i, (I/2)-i know have target object close to or touch this sensing electrode 14.
As mentioned above, the first row sensing unit 131 in the B1 of region is completed by scanning.Next, can adopt and to line by line scan or the sensing unit 131 of interleaved mode to other row in the B1 of region carries out as above similar scanning, thus complete the scanning to whole region B1.Similarly, complete the scanning to other region B2, B3 and B4 successively, and then complete the scanning to whole capacitance type sensor 13.About the concrete scanning process of the sensing unit 131 for other row sensing unit 131 in the B1 of region and other region B2, B3 and B4, repeat no more herein.
Due to the differential current signal that the sensing unit 131 of capacitance type sensor 13 of the present invention exports, described differential current signal is stablized, not easily by the impact of stray capacitance in circuit (as the stray capacitance between control electrode C3 and ground wire 133, stray capacitance etc. between second, third signal wire G22, G23 and ground wire 133), therefore the sensing signal that described capacitance type sensor 13 exports is comparatively strong and stable.Correspondingly, what the control circuit 11 of described capacitance-type sensing device 1 received is from the sensing signal of capacitance type sensor 13 is differential current signal, therefore, the sensing precision of described capacitance-type sensing device 1 can be improved, thus is conducive to promoting Consumer's Experience.
In the principle of work of embodiment above, two charge period t1 and t3 are comprised with described time T, and two sensing period t2 and t4 be that example is described, so, change ground, in other embodiments, described time T comprises two electric discharge period t1 and t3, and two sense period t2 and t4, correspondingly, the drive singal of described modulation signal M is negative level, described reference signal generation circuit 117 is supplied to the first reference signal R1 of differential pair tube D and the second reference signal R2 and corresponds to negative level, namely, to sensing electrode 14, 3rd control electrode C3, and the 4th control electrode C4 discharge, this, namely section was defined as the period of discharging discharge time.
Refer to Figure 14, Figure 14 is the electrical block diagram of the second embodiment of capacitance-type sensing device of the present invention.Capacitance-type sensing device 2 is with the difference of capacitance-type sensing device 1: the first, and the structure of the sensing unit 231 of the capacitance type sensor 23 of capacitance-type sensing device 2 is slightly different from the structure of the sensing unit 131 of the capacitance type sensor 13 of capacitance-type sensing device 1; The second, the control circuit 21 control capacitance formula sensor 23 of capacitance-type sensing device 2 performs the principle of work that the principle of work sensed slightly is different from the control circuit 11 control capacitance formula sensor 13 execution sensing of capacitance-type sensing device 1.The structure distinguished capacitance-type sensing device 2 and capacitance-type sensing device 1 below and principle of work carry out related description, so, the more similar or identical part of capacitance-type sensing device 2 and capacitance-type sensing device 1, repeat no more herein, for those skilled in the art, its basis, can without the need to creative work natural expansion on described capacitance-type sensing device 2 above to the description of the structure & working mechanism of capacitance-type sensing device 1.
See also Figure 15 and Figure 16, Figure 15 is the electrical block diagram of two sensing units 231 adjacent on a column direction shown in Figure 14.Figure 16 is the part circuit structure schematic diagram of the capacitance-type sensing device 2 of Figure 14.Below describe for two adjacent sensing units 231 and target object is described for finger F, the structure & working mechanism of other sensing unit 231 is similar, repeats no more.Described sensing circuit 25 comprises change-over circuit 251.Described change-over circuit 251 is for responding sensing electrode 24 because of the close of finger F or the change touching caused reference signal, and corresponding generation the second AC signal.Preferably, described change-over circuit 251 change sensing electrode 24 because of finger F close to or the variable quantity that touches caused reference signal be the first AC signal, and superpose on described first AC signal to one second constant DC signal, described second AC signal of corresponding generation.Preferably, described first AC signal and the second AC signal are current signal.So, in other embodiments, described second AC signal also can be voltage signal.
In the present embodiment, described change-over circuit 251 comprises third transistor N3.Described third transistor N3 responds sensing electrode 24 because of the close of finger F or the change touching caused reference signal, and correspondence produces the second AC signal.Preferably, described third transistor N3 changes and amplifies the variable quantity of sensing electrode 24 because of the reference signal caused by the close of target object or touch, described second AC signal of corresponding generation.
Described third transistor N3 is used for forming differential pair tube (sign) with the third transistor N3 of neighboring sensor unit 231.Such as, for the third transistor N3 of a sensing unit 231: for forming differential pair tube with the third transistor N3 of adjacent sensing unit 231 on line direction; Or/and, for forming differential pair tube with the third transistor N3 of adjacent sensing unit 231 on column direction.
Preferably, the third transistor N3 of the third transistor N3 of described each sensing unit 231 neighboring sensor unit 231 of diverse location in timesharing and line direction and column direction forms differential pair tube respectively.That is, two sensing units 231 of arbitrary neighborhood are for forming a sensing unit group 233 (see Figure 15).In the present embodiment, the sensing unit of same row 231 shares a current source 211, with the third transistor N3 of sensing unit 231 adjacent in a line when needs composition differential pair tube, shares a current source 211 (see Figure 14).
When capacitance type sensor 23 performs sensing, be electrically connected with same current source 211 two is adjacent and third transistor N3 in the sensing unit 231 be activated forms differential pair tube, described two adjacent and the 5th transmission electrode P5 of third transistor N3 in the sensing unit 231 be activated is electrically connected same current source 211.By the component properties of differential pair tube, for described two adjacent and sensing units 231 be activated: be no matter sensing electrode 24 in one of them sensing unit 231 or two sensing units 231 by target object close to or when touching the change of caused reference signal, third transistor N3 in described two sensing units 231 forms the second AC signal respectively on the 6th transmission electrode P6, and the second AC signal that two third transistor N3 are formed respectively is with width with same frequency and reversed-phase, for differential signal, sum of the two is equal with the first constant DC signal that described current source 211 provides.
Preferably, the sensing circuit 25 of described each sensing unit 231 comprises the first switch element Q1 further.Described first switch element Q1 is connected between the 5th transmission electrode P5 and described current source 211, for controlling whether carry out current delivery between described 5th transmission electrode P5 and described current source 211.
Described first switch element Q1 comprises the first transistor N1.Described the first transistor N1 comprises the first control electrode V1, the first transmission electrode P1 and the second transmission electrode P2.Described first control electrode V1 to control between the first transmission electrode P1 and the second transmission electrode P2 whether conducting for responding one scan signal correspondence.First transmission electrode P1 is for connecting described current source 211.Second transmission electrode P2 is for connecting described 5th transmission electrode P5.
Preferably, described first switch element Q1 comprises transistor seconds N2 further.Described transistor seconds N2 comprises the second control electrode V2, the 3rd transmission electrode P3 and the 4th transmission electrode P4.Described second control electrode V2 to control between the 3rd transmission electrode P3 and the 4th transmission electrode P4 whether conducting for responding one scan signal correspondence.3rd transmission electrode P3 is for connecting the second transmission electrode P2.
More preferably, described sensing circuit 25 comprises second switch unit Q2 further.Described second switch unit Q2 is used for controlling whether to transmit the first reference signal to the 3rd control electrode V3.Third transistor N3 is associated with sensing electrode 24, and therefore, second switch unit Q2 correspondence controls whether transmission of reference signals is to described sensing electrode 24.
In the present embodiment, described 3rd control electrode V3 and described sensing electrode 24 are two electrodes, and described 3rd control electrode V3 directly connects described sensing electrode 24.In other embodiments, described 3rd control electrode V3 also connects described sensing electrode 24 by current limiting element, and described current limiting element comprises resistance, plays the effect of anti-ESD.In addition, described 3rd control electrode V3 and described sensing electrode 24 also can be same electrode.
Preferably, described second switch unit Q2 comprises the 5th transistor N5.Described 5th transistor N5 comprises the 5th control electrode V5, the 9th transmission electrode P9 and the tenth transmission electrode P10.Wherein, the 5th control electrode V5 corresponding controls the 9th transmission electrode P9 and the tenth transmission electrode P10 whether conducting for responding one scan signal.9th transmission electrode P9 is for receiving the first reference signal.Tenth transmission electrode P10 connects the 3rd control electrode V3.
More preferably, described sensing circuit 25 comprises the first compensating unit U1 further.Described first compensating unit U1 is arranged between the tenth transmission electrode P10 and the 3rd control electrode V3, for compensating voltage when the 5th transistor N5 closes between the tenth transmission electrode P10 and the 3rd control electrode V3.
Preferably, described first compensating unit U1 comprises the 7th transistor N7.Described 7th transistor N7 comprises the 7th control electrode V7, the 13 transmission electrode P13 and the 14 transmission electrode P14.Wherein, the 7th control electrode V7 controls the 13 transmission electrode P13 and the 14 transmission electrode P14 whether conducting for responding one scan signal.13 transmission electrode P13 connects the tenth transmission electrode P10.14 transmission electrode P14 connects the 3rd control electrode V3.13 transmission electrode P13 and the 14 transmission electrode P14 short circuit.
7th transistor N7 is used for and the 5th transistor N5 alternate conduction, and the 7th transistor N7 of conducting compensates the voltage between the 3rd control electrode V3 and the tenth transmission electrode P10 when the 5th transistor N5 ends.
Referring again to Figure 15 and Figure 16, described capacitance type sensor 23 comprises multiple sweep trace group G3, multiple signal wire group G4 and many reference signal line X further.Wherein, described sweep trace group G3 is for transmitting scanning-line signal to described multiple sensing unit 231.Described signal wire group G4 is used for transmission current signal between described multiple sensing unit 231 and described control circuit 21.Described many reference signal line X are for transmitting the first reference signal to described multiple sensing unit 231.
Described sweep trace group G3 comprises the first sweep trace G31, the second sweep trace G32, three scan line G33 and the 4th sweep trace G34.Described signal wire group G4 comprises the first signal wire G41, secondary signal line G42 and the 3rd signal wire G43.
The 6th transmission electrode P6 for the third transistor N3 of be arranged in same row two adjacent sensing unit 231: sensing units 231 is used for being connected with secondary signal line G42, and the 6th transmission electrode P6 of the third transistor N3 in another sensing unit 231 is used for being connected with the 3rd signal wire G43; The 5th transmission electrode P5 of the third transistor N3 of described two adjacent sensing units 231 is connected by same first signal wire G41.
For each signal wire group G4: described first signal wire G41, secondary signal line G42 and the 3rd signal wire G43 extend along column direction, and described first signal wire G41, secondary signal line G42 and the 3rd signal wire G43 arrange in the row direction successively.
In the present embodiment, the sensing unit 231 of odd-numbered line all connects secondary signal line G42, and the sensing unit 231 of even number line all connects the 3rd signal wire G43.Change ground, in other embodiments, the sensing unit 231 of odd-numbered line all connects the 3rd signal wire G43, and the sensing unit 231 of even number line all connects secondary signal line G42.
First sweep trace G31 and the second sweep trace G32 insulate cross arrangement.
Preferably, the control electrode V3 of the first transistor N3 of same row is connected to same first sweep trace G31.The second control electrode V2 with the transistor seconds N2 of a line is connected to same second sweep trace G32.The 5th control electrode V5 with the 5th transistor N5 of a line is connected to same three scan line G33.The 7th control electrode V7 with the 7th transistor N7 of a line is connected to same 4th sweep trace G34.The 9th transmission electrode P9 with the 5th transistor N5 of a line is connected to same reference signal line X.
Multiple sensing units 231 due to capacitance type sensor 23 respond sensing electrode 24 because of the close of target object or the change touching caused reference signal, and corresponding second AC signal that produces is to control circuit 21, therefore, the sensing signal that exports of capacitance type sensor 23 is comparatively strong and stability is higher.
The principle of work of described capacitance-type sensing device 2 is as follows.
In the present embodiment, preferably, described capacitance-type sensing device 2 adopts the mode of blocked scan to work.So, in other embodiments, also can without the need to blocked scan, but complete scan a line each time, by Multiple-Scan, complete the scanning of all sensing units 231 to whole capacitance type sensor 23.
See also Figure 17, Figure 17 is the frame structure schematic diagram of capacitance type sensor 23.Similar with Figure 13, the multiple sensing units 231 shown in Figure 14 have been divided into 4 regions, are respectively J1, J2, J3 and J4.Multiple sensing units 231 in described scanning block J1 are labeled as a11 ~ a55 by the mode of row-column arrangement, in scanning block J2, the sensing unit adjacent with sensing unit a55 is denoted as a56, and in scanning block J3, the sensing unit adjacent with sensing unit a55 is denoted as a65.Herein, mainly to be described the scan mode of the sensing unit 231 in scanning block J1, the scan mode of the sensing unit 231 in other scanning block J2, J3 and J4 is similar, repeats no more herein.In addition, scan drive circuit 215 drives the principle of work of the first switch element Q1 and second switch unit Q2 alternate conduction, sensing circuit 25 provides the first reference signal to charge to the 3rd control electrode V3 at charge period, stop providing the first reference signal to the 3rd control electrode V3 in the sensing period, the principle of work that sensing electrode 24 correspondence performs sensing in the sensing period is all similar with the principle of work of capacitance-type sensing device 1, also repeats no more herein.The main principle of work difference to capacitance-type sensing device 2 and capacitance-type sensing device 1 is described below.
First, it should be noted that, such as, for capacitance-type sensing device 2 for for fingerprint sensing device, usually, multiple sensing unit 231 is set between adjacent fingerprint ridge and fingerprint paddy usually.
Secondly, sensing unit 131 due to capacitance-type sensing device 1 comprises a differential pair tube D all separately, therefore, it is absolute value that described sensing unit 131 senses the second AC signal obtained, control circuit 11 is compared by the sensing signal exported each sensing unit 131, then may correspond to acquisition information in fingerprint.Relatively, because the third transistor N3 of the neighboring sensor unit 231 of capacitance-type sensing device 2 is for forming a differential pair tube, therefore, each sensing unit 231 senses the second AC signal obtained is not absolute value as described above.
In order to obtain information in fingerprint, preferably, the third transistor N3 of all adjacent sensing unit 231 of the third transistor N3 of each sensing unit 231 and its line direction and column direction is needed to form differential pair tube respectively, thus, obtain many group sensing numerical value, do subtraction to the adjacent sensing numerical value obtained again and obtain many group sensing differences, described control circuit 21 by comparing described many group sensing differences, then may correspond to acquisition information in fingerprint.
The scanning process of described control circuit 21 to the multiple sensing units 231 in described scanning block J1 is as follows:
First, the described control circuit 21 first independent sensing unit 231 to the first row carries out first time scanning, now, third transistor N3 in third transistor N3 in sensing unit a11 and sensing unit a12 forms differential pair tube, third transistor N3 in third transistor N3 in sensing unit a13 and sensing unit a14 forms differential pair tube, and described control circuit 21 obtains sensing signal Y1, Y2 respectively.
The described control circuit 21 more independent sensing unit 231 to the first row carries out second time scanning, now, third transistor N3 in third transistor N3 in sensing unit a12 and sensing unit a13 forms differential pair tube, third transistor N3 in third transistor N3 in sensing unit a14 and sensing unit a15 forms differential pair tube, and described control circuit 21 obtains sensing signal Y3, Y4 respectively.
Control circuit 21 takes turns doing subtraction to sensing signal Y1, Y3, Y2, Y4 of obtaining, obtains sensing difference △ Y1, △ Y2, △ Y3 respectively.
Next, control circuit 21 scans the sensing unit 231 of the first row and the second row simultaneously, two sensing units 231 that same row are adjacent, as a11 and a21, third transistor N3 form differential pair tube, described control circuit 21 obtains sensing signal Y5, Y6, Y7, Y8, Y9 (sign) respectively.
Control circuit 21 takes turns doing subtraction to sensing signal Y5, Y6, Y7, Y8, Y9 of obtaining, obtains sensing difference △ Y4, △ Y5, △ Y6, △ Y7 (sign) respectively.
Following again, control circuit 21 carries out first time scanning to the sensing unit 231 of the second row separately, wherein, third transistor N3 in third transistor N3 in sensing unit a21 and sensing unit a22 forms differential pair tube, third transistor N3 in third transistor N3 in sensing unit a23 and sensing unit a24 forms differential pair tube, and described control circuit 21 obtains sensing signal Y10, Y11 (sign) respectively.
The described control circuit 21 more independent sensing unit 231 to the second row carries out second time scanning, wherein, third transistor N3 in third transistor N3 in sensing unit a22 and sensing unit a23 forms differential pair tube, third transistor N3 in third transistor N3 in sensing unit a24 and sensing unit a25 forms differential pair tube, and described control circuit 21 obtains sensing signal Y12, Y13 (sign) respectively.
Control circuit 21 takes turns doing subtraction to sensing signal Y10, Y12, Y11, Y13 of obtaining, obtains sensing difference △ Y8, △ Y9, △ Y10 (sign) respectively.
Next, control circuit 21 scans the sensing unit 231 of the second row and the third line simultaneously.
According to as above scan mode, the sensing unit 231 of other row of J1 in scanning block is scanned, similarly, the sensing unit 231 of other scanning block J2, J3, J4 is scanned, thus the scanning completed all sensing units 231, obtain many group sensing difference △ Y1, △ Y2 ..., described control circuit 21 compares many groups of sensing differences of acquisition to know information in fingerprint.
It should be noted that, more accurate in order to sense, the sensing unit 231 for scanning block J1 edge: also need form differential pair tube with the third transistor N3 of the sensing unit 231 of other adjacent scan areas J2, J3, acquisition sensing signal.Such as, for sensing unit a55: the sensing unit a55 in the third transistor N3 in sensing unit a55 and sensing unit a56 and a65 forms differential pair tube more respectively.
Control sensing unit 231 to control circuit 21 above to perform scan operation and done general explanation; so; the scan mode of capacitance-type sensing device 2 of the present invention is not limited to the above; for a person skilled in the art; it is not paying on the basis of creative work, all should fall into protection scope of the present invention according to other change embodiment that the above-mentioned description of the present invention is made.
Due to the current signal that the sensing unit 231 of capacitance type sensor 23 of the present invention exports, described current signal stable, not easily by the impact of stray capacitance in circuit (as the stray capacitance between control electrode C3 and ground wire 133, stray capacitance etc. between second, third signal wire G22, G23 and ground wire 133), therefore the sensing signal that described capacitance type sensor 23 exports is comparatively strong and stable.Correspondingly, what the control circuit 21 of described capacitance-type sensing device 2 received is from the sensing signal of capacitance type sensor 23 is current signal, and therefore, the sensing precision of described capacitance-type sensing device 2 can be improved, thus is conducive to promoting Consumer's Experience.
Refer to Figure 18, Figure 18 is the schematic diagram of other change embodiment of capacitance-type sensing device of the present invention.In figure 18, the circuit diagram of a sensing unit is only shown.Wherein, sensing unit 331 sensing circuit 35 that comprises sensing electrode 34 and be connected with sensing electrode.Described sensing circuit 35 for change sensing electrode 34 because of target object close to or the variable quantity that touches caused reference signal be corresponding current signal, and export to signal wire (not shown) by output terminals A 1, described signal wire transmission current signal is to control circuit (not shown), and described control circuit knows corresponding sensitive information according to described current signal.Visible, the sensing signal that sensing unit 331 exports is current signal, and this sensing signal is an absolute value.
Particularly, described sensing circuit comprises change-over circuit 351 and switch element 353.Described change-over circuit 351 comprises operational amplifier 36, transistor 37 and resistance R.The in-phase end of sensing electrode 34 concatenation operation amplifier 36, the end of oppisite phase of described operational amplifier 36 is used for being connected to ground by resistance R.Switch element 353 comprises transistor 38 and transistor 39, and the two forms secondary switch, and its control end E1, E2 are separately used for responding scanning signal and correspondingly control transistor 38,39 whether conducting.Wherein, transistor 37 is connected with transistor 38.The sensing signal that described sensing circuit 35 produces outputs to output terminals A 1 by switch element 353.
What need to illustrate is again, the capacitance-type sensing device of the various embodiments that the present invention is above-mentioned preferably adopts self-capacitance mode to perform sense operation, so, the present invention is not as limit, and the capacitance-type sensing device for above-mentioned various embodiments also can adopt mutual capacitance mode to perform sense operation.When sense operation is performed for employing mutual capacitance mode, the capacitance-type sensing device of described various embodiment comprises drive electrode further, as around as described in the driving ring of capacitance type sensor, described drive electrode is for receiving drive singal, and described sensing electrode is used for output sensing signal.When target object touches capacitance-type sensing device, can drive electrode be touched, thus drive singal is transferred to target object, and then act on and form capacity coupled sensing electrode with target object, thus form mutual capacitance sensing.About the principle of work of other element of capacitance-type sensing device and principle of work described above similar, repeat no more herein.
Capacitance-type sensing device-chipset
(1) capacitance-type sensing device
At present, existing capacitance-type sensing device, as fingerprint sensing device, is generally based on Silicon Wafer making CMOS integrated circuit.So, area due to capacitance type sensor generally accounts for about 80% of the area of whole capacitance-type sensing device, therefore, the material of the required Silicon Wafer consumed of capacitance-type sensing device is more, cause manufacturing cost higher, in addition, the area of capacitance type sensor is larger, also can be subject to the makers' production capacity restriction of Silicon Wafer, thus affect the production capacity of capacitance-type sensing device.
In particular, for fingerprint sensing device, it compares other class sensing device (as touch-control sensing device), area is relatively large, is about 30 ~ 50 square millimeters, therefore, the Silicon Wafer material of single fingerprint sensing device use is relatively many, thus improves manufacturing cost.
Just owing to there is technical matters as above, correspondence of the present invention proposes a kind of capacitance type sensor, be used in insulated substrate forms the technique including the integrated circuit of thin film transistor (TFT) (TFT) to make, relatively, described control circuit is integrated into a control chip, described control chip is used in Silicon Wafer forms the technique including the integrated circuit of complementary metal oxide semiconductor (CMOS) (CMOS) transistor to make, therefore, capacitance type sensor and both control circuits separate and make, form two chips, correspondingly, the capacitance-type sensing device comprising described two chips is a chipset (Chipset).Wherein, described insulated substrate is as being glass substrate, plastic base, ceramic substrate etc.
Invention thought is herein suitable for the above-mentioned capacitance-type sensing device 1 mentioned and capacitance-type sensing device 2.Be described for capacitance-type sensing device 1 below, certainly, technical scheme described below is suitable for capacitance-type sensing device 2 equally, and so, related content repeats no more.
Correspondingly, first to the 8th transistor T1 ~ T8 of capacitance type sensor 13 is thin film transistor (TFT), and preferred low-temperature polysilicon film transistor, so, amorphous silicon film transistor, metal oxide (as: IGZO) thin film transistor (TFT), graphene film transistor are all applicable.In the present embodiment, described insulated substrate adopts glass substrate, that is, substrate 130 is glass substrate.Described control circuit 11 is integrated into control chip 15 (see Figure 20), and described control chip 15 is pressed together on described insulated substrate preferably by the mode of glass top chip (COG).
Change ground, in other embodiments, during according to plastic base, capacitance type sensor 13 correspondence can adopt volume to volume (rolltoroll) technique to make and be formed.Further, in other embodiments, described control chip 15 is connected with described capacitance type sensor 13 by an intermediate connector (not shown), and described intermediate connector is as being flexible circuit board; Or described control chip 15 and described capacitance type sensor 13 are formed in relative two sides of substrate 130; Or described control circuit 11 is integrated in other chip of electronic equipment, as power management chip or display driver chip.
Refer to Figure 19, Figure 19 is the schematic diagram forming multiple capacitance-type sensing device 1 on a slice glass substrate.The thickness of described glass substrate 17 is 0.4mm, and area is 4cm × 4cm.Described glass substrate 17 is divided into 16 equal-sized regions, that is, each region area is about 50 square millimeters.Based on TFT manufacturing process, form the thin film transistor (TFT) in the integrated circuit of capacitance type sensor 13 on each zone.The integrated circuit of described capacitance type sensor 13 comprises multiple sensing unit 131 and sweep trace group G1, signal wire group G2, reference signal line R and ground wire 133 (seeing also Fig. 1 and Fig. 2).The integrated circuit of described control chip 15 comprises CMOS (Complementary Metal Oxide Semiconductor) transistor or/and electronic components such as resistance or/and electric capacity.Then, adopt the mode of COG to be pressed together on glass substrate 17 control chip 15 being integrated with control circuit 11, and be connected with described multiple sensing unit 131.Wherein, described control chip 15 and described multiple sensing unit 131 are positioned at the homonymy of glass substrate 17.
Cut described glass substrate 17 one-tenth 16 small pieces, thus, form 16 capacitance-type sensing devices 1.Each cut small pieces glass substrate is the substrate 130 of capacitance type sensor 13.Similarly, the area of described glass substrate 17 also can be 40cm × 40cm, and correspondence can form 1600 capacitance-type sensing devices 1.It should be noted that, after control chip 15 is pressed together on glass substrate 17, before glass-cutting substrate 17 one-tenth 16 small pieces, preferably, the glass substrate 17 of the integrated circuit being loaded with described control chip 15 and capacitance type sensor 13 is placed in an injection mold, epoxy resin material injection is entered in cavity body of mould, the integrated circuit of described control chip 15 and capacitance type sensor 13 is encapsulated.
The integrated circuit technology adopting formation on insulated substrate to comprise thin film transistor (TFT) due to capacitance type sensor 13 is made, insulated substrate is compared with the low price of silicon substrate, and insulated substrate is not subject to the restriction of 8 cun compared with silicon substrate, therefore, the manufacturing cost comprising the capacitance-type sensing device 1 of described capacitance type sensor 13 is lower, and the production capacity of control chip 15 also can obtain corresponding raising.
Preferably, glass substrate 17 forms conductive layer further, described conductive layer is positioned at relative two sides of described glass substrate 17 with described multiple sensing unit 131.After the described glass substrate 17 of cutting, the capacitance type sensor 13 of each capacitance-type sensing device 1 comprises conductive layer 135 (see Figure 20 below) further, and described conductive layer 135 is for being formed in a part for the conductive layer on glass substrate 17.
Described conductive layer 135 is for transmitting identical signal with described ground wire 133.Preferably, described conductive layer 135 is for connecting the modulation ground NGND of described electronic equipment, transmission modulation signal, thus, be in ground signalling compared to described modulation signal, when described modulation signal is in drive singal, the driving intensity that described control circuit 11 is transferred to the signal of capacitance type sensor 13 uprises, when being fingerprint sensing device for capacitance-type sensing device 1, and then more easily can sense fingerprint image.In addition, described conductive layer 135 also can play the effect of shielding to a certain extent.
Change ground, in other embodiments, described ground wire 133, described conductive layer 135 and described earth terminal 110 are all for being connected the equipment ground of described electronic equipment, and receive the ground signalling from equipment ground, described ground signalling is constant voltage signal.
Refer to Figure 20, Figure 20 is the schematic side view of the capacitance-type sensing device 1 shown in Figure 19.Described substrate 130 comprises relative first surface A and second B.Described multiple sensing unit 131 is arranged on described first surface A.The first surface A of described substrate 130 is arranged a binding district 137 (BondingArea).Described conductive layer 135 is arranged on described second B.
Described control chip 15 is arranged on described binding district 137.Preferably, described control chip 15 pressing (bonding) in described binding district 137, and is connected with described capacitance type sensor 13.Described capacitance type sensor 13 extends many wire (not shown), is connected with described control chip 15 by described many wires.Described many wires are as being aforesaid first, second, third signal wire G21, G22, G23, reference signal line R, first, second, third, fourth sweep trace G11, G12, G13, G14 etc.
In the present embodiment, described capacitance type sensor 13 is bare chip with described control chip 15.Described capacitance type sensor 13 is packaged in one with described control chip 15 by injection packaging process, thus saves manufacturing cost.So, change ground, in other embodiments, described capacitance type sensor 13 and/or described control chip 15 are the chip encapsulated, but not bare chip.It should be noted that, in order to bare chip can be electrically connected easily, its aluminium electrode will be pre-formed the au bump (Aubump) of high about 15 microns.
Understandably, described conductive layer 135 comprises at least one metal level or wire netting compartment.In other embodiments, described conductive layer 135 adopts transparent conductive material to make, and wherein, transparent conductive material, as being ITO, IZO material, being sputtered on second B of described substrate 130 by ITO target, makes ITO conductive film layer.In order to prevent ito thin film from coming off in production run embrittlement, a protective seam (not shown) can be formed at described ITO conductive film further.
Refer to Figure 21 and Figure 22, Figure 21 and Figure 22 is the side view of other change embodiment of capacitance-type sensing device 1.Wherein, the key distinction of Figure 21, Figure 22 and Figure 20 is: described binding district 137 is arranged on second B of substrate 130.Described substrate 130 forms multiple via hole 139, and described many wires 138 extend to the binding district 137 second B from first surface A through described via hole 139.The key distinction of Figure 22 and Figure 21 is: described many wires 138 extend to the binding district 137 second B from first surface A around the edge, side of described substrate 130.
(2) chipset
Based on the technological thought of above-mentioned capacitance-type sensing device, the chip of other suitable type also can adopt above-mentioned technological thought to form chipset, and is not limited to capacitance-type sensing device.Correspondingly, the invention provides a kind of structure of novel chip group, be described as follows.
Refer to Figure 23, Figure 23 is the schematic diagram of a better embodiment of chipset of the present invention.Described chipset 8 comprises the first chip 81 and the second chip 83.The first integrated circuit 813 that described first chip 81 comprises insulated substrate 811 and is arranged on described insulated substrate 811.The second integrated circuit 833 that described second chip 83 comprises semiconductor substrate 831 and is arranged on described semiconductor substrate 831.
Described insulated substrate 811 is any one in glass substrate, plastic base and ceramic substrate; Described semiconductor substrate 831 comprises silicon substrate.
Described first chip 81 is associated with the second chip 83.Described second chip 83 is arranged on the insulated substrate 811 of described first chip 81, and is connected with the first integrated circuit 813 of described first chip 81.Preferably, described second chip 83 is pressed together on described insulated substrate 811, and is all positioned at the homonymy of described insulated substrate 811 with described first integrated circuit 813.Such as, when insulated substrate 811 is glass substrate, described second chip 83 is pressed together on described glass substrate by the mode of glass top chip (COG).
Described first integrated circuit 813 comprises one or more transistor, and described one or more transistor is thin film transistor (TFT).That is, described first chip 81 is used in integrated circuit insulated substrate 811 being formed and comprises thin film transistor (TFT).
Described second integrated circuit 833 comprises one or more CMOS (Complementary Metal Oxide Semiconductor) transistor.That is, described second chip 83 is used in integrated circuit semiconductor substrate 831 being formed and comprises CMOS (Complementary Metal Oxide Semiconductor) transistor.
Comprise the first chip 81 due to chipset 8 and the second chip 83, first chip 81 adopts integrated circuit insulated substrate 811 being formed and comprises thin film transistor (TFT), therefore, the cost of described chipset 81 is lower, also can improve the manufacture production capacity of the second chip 83 simultaneously.
Further, in the present embodiment, described first chip 81 gives described second chip 81 for output difference sub-signal.Preferably, described differential signal is differential current signal.Change ground, described first chip 81 gives described second chip 81 for output current signal.So, the present invention non-limiting described first chip 81 differential signal transmission or current signal give the second chip 81, change ground, and in other embodiments, described first chip 81 also can transmit the signals such as non-differential voltage signal to the second chip 83.
Described first chip 81 is as being sensor, and described second chip 83 is as being control chip, and described second chip 83 performs corresponding sensing function for controlling the first chip 81.Described first chip 81 is corresponding for responding the close of target object or touch exports corresponding sensing signal to described second chip 83, and described second chip 83 knows corresponding sensitive information according to described sensing signal further.Preferably, described sensing signal is current signal.More preferably, described sensing signal is differential current signal.Described sensitive information is the predetermined biological information of target object.
Based on the same or analogous reason of above-mentioned capacitance-type sensing device 1, the cost of described chipset 8 is lower.In addition, described chipset 8 second chip receive be current signal or differential signal, therefore the information provided of described chipset 8 is more accurate.
The circuit structure of capacitive sensing system
Refer to Figure 24, Figure 24 is the structural representation of the first embodiment of capacitive sensing system of the present invention.Described capacitive sensing system 3 comprises capacitance-type sensing device 30 and power management chip 35.Described power management chip 35 is connected between described capacitance-type sensing device 30 and a main control chip (Host) 9, for powering for described capacitance-type sensing device 30, and set up information communication between described main control chip 5 and described capacitance-type sensing device 30.Described main control chip 5 is as the CPU being electronic equipment, and described main control chip 5 controls electronic equipment for the information correspondence sensed according to described capacitive sensing system 3 and performs corresponding function, as separated screen, paying etc.
In the present embodiment, described capacitance-type sensing device 30 is a chipset, comprises capacitance type sensor 31 and control chip 33.Described control chip 33 performs sense operation for controlling described capacitance type sensor 31.Wherein, described capacitance type sensor 31 is also a chip.
Preferably, described capacitance-type sensing device 30 is as the capacitance-type sensing device 1,2 etc. for each embodiment as described in aforementioned, the control circuit 11,21 of described capacitance-type sensing device 1,2 is integrated in control chip respectively, and such as, described control chip 33 is aforementioned control chip 15.So, described capacitance-type sensing device 30 also can be the capacitance-type sensing device of other suitable type.
Described power management chip 35 is for providing the first supply voltage for described capacitance type sensor 31, and for described control chip 33 provides second source voltage, wherein, the first supply voltage is different from second source voltage.
Because the capacitance type sensor 31 of capacitance-type sensing device 30 is two chips with control chip 33, correspondingly, power management chip 35 can provide different supply voltage to described capacitance type sensor 31 and control chip 33, thus can improve the dirigibility of product design.
Preferably, described first supply voltage is higher than second source voltage.
When described first supply voltage is higher than second source voltage, the signal to noise ratio (S/N ratio) (SNR) of capacitance type sensor 31 uprises, thus is conducive to provide stronger sensing signal to control chip 33, improves sensing precision.In addition, capacitance type sensor 31 is large compared with the area of control chip 33, therefore, by improving to the supply voltage of capacitance type sensor 31, thus the manufacturing process different from control chip 33 can be adopted to manufacture capacitance type sensor 31, reduce the production cost of capacitance type sensor 31.As, capacitance type sensor 31 and control chip 33 all can adopt technique silicon wafer substrate being formed integrated circuit to make, so, control chip 33 adopts and makes compared with the higher technique of capacitance type sensor 31, as, the minimal characteristic live width of the integrated circuit in control chip 33 is 0.13nm (nanometer), and relatively, the minimal characteristic live width of the integrated circuit in capacitance type sensor 31 is 0.35nm.
Preferably, described capacitance type sensor 31 is used in insulated substrate forms the technique including the integrated circuit of thin film transistor (TFT) to make, and described control chip 33 is used in semiconductor substrate forms the technique including the integrated circuit of complementary metal oxide semiconductor (CMOS) (CMOS) transistor to make.Further, described thin film transistor (TFT) is preferably low-temperature polysilicon film transistor.Described control chip 33 is pressed together on the insulated substrate of capacitance type sensor 31 preferably by the mode of glass top chip (COG).The insulated substrate of described capacitance type sensor 31 is as being glass substrate, plastic base or ceramic substrate etc.Described semiconductor substrate is as being silicon substrate etc.
Particularly, described capacitance type sensor 31 comprises the first power input 311 and earth terminal 312.Described control chip 33 comprises second source input end 331 and earth terminal 333.Described power management chip 35 comprises the first power output end 351, second source output terminal 353, modulated terminal 355 and earth terminal 357.Wherein, described first power output end 351 is connected with the first power input 311, and described second source output terminal 353 is connected with described first power input 311.Described modulated terminal 355 is connected respectively with described earth terminal 312 and earth terminal 333.Described earth terminal 357, for connecting the equipment ground GND of electronic equipment, receives ground signalling.Described earth terminal 357 is connected with described modulated terminal 355 by a modulation circuit 359.Described modulated terminal 355 as with being used as the modulation of electronic equipment NGND or with modulation NGND be connected.
Described power management chip 35 exports the first supply voltage to described first power input 311 by the first power output end 351, and exports second source voltage to described second source input end 331 by second source output terminal 353.Described modulation circuit 359 receives ground signalling and a drive singal of earth terminal 357, the described modulation signal of corresponding generation.Described modulation signal comprises ground signalling and drive singal, and drive singal is higher than ground signalling.Preferably, described modulation signal is as the periodic square wave signal alternately occurred for ground signalling and drive singal.Described drive singal is as provided for the generation of power management chip 35 inside or external circuit.Described modulation circuit 359 is as comprised control module and two-transistor, and described control module controls described two-transistor respectively and alternately exports ground signalling and drive singal to form described modulation signal.
Described power management chip 35 exports modulation signal to described earth terminal 312 and earth terminal 333 by described modulated terminal 355, wherein, the first supply voltage that described first power input 311 receives changes with the change of described modulation signal, and the second source voltage that described second source input end 331 receives changes with the change of described modulation signal.
Preferably, described first supply voltage and second source voltage all raise with the rising of described modulation signal, reduce with the reduction of described modulation signal.
Described first supply voltage becomes one the 3rd supply voltage after described modulation signal modulation, and described second source voltage becomes one the 4th supply voltage after described modulation signal modulation.
Accordingly, each point voltage of the integrated circuit in described capacitance type sensor 31 (as elucidated before sensing electrode 14,24 load reference signal) all changes with the change of modulation signal, thus, ground signalling is in compared to described modulation signal, when described modulation signal is in drive singal, each point voltage correspondence of the integrated circuit in capacitance type sensor 31 uprises.Similarly, each point voltage of the integrated circuit in described control chip 33 all changes with the change of modulation signal, thus when modulation signal is in drive singal, each point voltage correspondence of the integrated circuit in control chip 33 uprises.
Preferably, described capacitive sensing system 3 comprises the first protection circuit 37 and the second protection circuit 38 further.Wherein, described first protection circuit 37 is arranged between described first power output end 351 and the first power input 311; described first protection circuit 37, for when first supply voltage of the 3rd supply voltage higher than the first power output end 351 place, disconnects the connection between the first power output end 351 and the first power input 311.Described second protection circuit 38 is arranged between described second source output terminal 353 and second source input end 331; described second protection circuit 38, for when the second source voltage of the 4th supply voltage higher than second source output terminal 353 place, disconnects the connection between second source output terminal 353 and second source input end 331.
In the present embodiment, described first protection circuit 37 comprises the first diode D1, and described first diode D1 is series between described first power output end 351 and the first power input 311.Described second protection circuit 38 comprises the second diode D2, and described second diode D2 is series between described second source output terminal 353 and described second source input end 331.
Described capacitive sensing system 3 comprises the first electric capacity C11, the second electric capacity C12, the 3rd electric capacity C13, the 4th electric capacity C14 further.Wherein, the anode of described first diode D1 connects the negative electrode of earth terminal 357, the first diode D1 of power management chip 35 by the second electric capacity C12 connection modulated terminal 355 by the first electric capacity C11.The anode of described second diode D2 connects the negative electrode of earth terminal 357, the second diode D2 of power management chip 35 by the 4th electric capacity C14 connection modulated terminal 355 by the 3rd electric capacity C13.
Described capacitive sensing system 3 comprises flash cell 39 further, and described flash cell 39 is for storage program.In the present embodiment, described flash cell 39 is built in described control chip 33.So, change ground, in other embodiments, described flash cell 39 is an independently chip, is connected with described control chip 33, or, be connected with described power management chip 35.
The structure respective with control chip 33 about above-mentioned capacitance type sensor 31 and interaction relationship therebetween, do not repeat them here.As previously mentioned, the capacitance type sensor 13,23 above described in each embodiment and control circuit 11,21 is preferably adopted.
Preferably, described capacitive sensing system 3 is capacitance type fingerprint sensing system.
As shown in the above, the capacitance-type sensing device 30 of described capacitive sensing system 3 comprises two chips, thus makes described capacitive sensing system 3 design more flexible.In addition, different by controlling to the voltage of each chip, thus improve the sensing precision of capacitive sensing system 3 on the one hand, the manufacturing cost of capacitive sensing system 3 can be reduced on the other hand.
Refer to Figure 25, Figure 25 is the structural representation of the second embodiment of capacitive sensing system of the present invention.Described capacitive sensing system 4 is substantially identical with the structure of capacitive sensing system 3, and the two key distinction is: the first protection circuit 47 of described capacitive sensing system 4 is different from the first protection circuit 37 of capacitive sensing system 3; Second protection circuit 48 of described appearance formula sensing system 7 is different from the second protection circuit 38 of capacitive sensing system 3.
Particularly, described first protection circuit 47 comprises the 9th transistor T9 and the first control module 470.Described 9th transistor T9 wraps the 9th control electrode C9, the 17 transmission electrode S17 and the 18 transmission electrode S18; Described 9th control electrode C9 connects described first control module the 470, the 17 transmission electrode S17 and connects the first power output end 451, and the 18 transmission electrode S18 connects the first power input 411; When first supply voltage of the 3rd supply voltage higher than the first power output end 451 place, described first control module 470 controls the 9th transistor T9 to be ended.
Described second protection circuit 48 comprises the tenth transistor T10 and the second control module 480.Described tenth transistor T10 wraps the tenth control electrode C10, the 19 transmission electrode S19 and the 20 transmission electrode S20; Described tenth control electrode C10 connects described second control module the 480, the 19 transmission electrode S19 and connects second source output terminal the 453, the 20 transmission electrode S20 connection second source input end 431; When the second source voltage of the 4th supply voltage higher than second source output terminal 453 place, described second control module 480 controls the tenth transistor T10 to be ended.
In the present embodiment, described first control module 470 is two control modules with described second control module 480.Change ground, in other embodiments, the two is same control module.
Further, above-mentioned technological thought of powering to chipset is suitable for said chip group 8 too.Circuit structure and the power supply the principle of each chip are analogized, and repeat no more herein.
The encapsulating structure of capacitance-type sensing device
Refer to Figure 26, Figure 26 is the schematic diagram of encapsulating structure first embodiment of capacitance-type sensing device of the present invention.The encapsulating structure 5 of described capacitance-type sensing device comprises capacitance-type sensing device and packaging body 51.Described packaging body 51 is for encapsulating capacitance-type sensing device.The material of described packaging body 51 is as being epoxy resin material or stupalith.
Preferably, described capacitance-type sensing device is as the capacitance-type sensing device 1,2,30 etc. for each embodiment as described in aforementioned.So, described capacitance-type sensing device also can be the capacitance-type sensing device of other suitable type.
In the present embodiment, be described for the capacitance-type sensing device 1 shown in Figure 20.Described packaging body 51 covers capacitance type sensor 13 on the first surface A of described substrate 130 and control chip 15.Wherein, the height of described packaging body 51 is a little more than the height of control chip 15, substantially concordant with the height of control chip 15.In addition, the surfacing of described packaging body 51.
Described packaging body 51 has two effects: the first, is isolated from the outside by the integrated circuit of control chip 15 and capacitance type sensor 13; The second, because capacitance type sensor 13 and control chip 15 variable thickness cause, described packaging body 51 plays the effect of planarization.
Refer to Figure 27 and Figure 28, Figure 27 and Figure 28 is the schematic diagram of other embodiment of encapsulating structure of capacitance-type sensing device of the present invention.The key distinction of Figure 27 and Figure 26 is: the height of described packaging body 53 is higher than the height of described packaging body 51.The key distinction of Figure 28 and Figure 27 is: described packaging body 55 encapsulates described capacitance-type sensing device 1 in the inner, and in other words, described capacitance-type sensing device 1 is wrapped in described packaging body 55.
The package assembly of capacitance type sensing module
Refer to Figure 29, Figure 29 is the schematic diagram of a better embodiment of capacitance type sensing module of the present invention.Described capacitance type sensing module 6 comprises the encapsulating structure 5 of capacitance-type sensing device, cover plate 61, color layers 63, adhesive coating 64 and flexible circuit board 67.Described color layers 63 is arranged on below cover plate 61, and is connected with the encapsulating structure 5 of capacitance-type sensing device by adhesive coating 64.Described flexible circuit board 67 is connected with the encapsulating structure 5 of described capacitance-type sensing device, and such as, for transmitting the signal of aforesaid power management chip 35 to capacitance-type sensing device, and the signal of transmission capacitance-type sensing device is to power management chip 35.Wherein, cover plate 61 selects any one material in glass, sapphire or glass-ceramic to make.Preferably, described color layers 63 is identical with the appearance color of electronic equipment.
Change ground, in other embodiments, the mode of plated film (Coating) also can be adopted on the encapsulating structure 5 of capacitance-type sensing device to form hardened layer (hardcoating).The color of described hardened layer is identical with the appearance color of electronic equipment.Correspondingly, above-mentioned cover plate 61, color layers 63, adhesive coating 64 can be omitted.
Preferably, capacitance type sensing module 6 also comprises a conducting element 69, for described conducting element 69:
As driving element, form mutual capacitance with sensing electrode 14 (24), transmission drive singal; Or
Be connected with the earth terminal 150 of capacitance-type sensing device, transmission modulation signal; Or
With the equipment of electronic equipment be connected, transmission ground signalling.
Certainly, the capacitance type sensing module adopting above-mentioned plated film mode to be formed also preferably includes described conducting element 69.
When described capacitance type sensing module 6 is the entity button of electronic equipment a part of, described conducting element 69 is such as basic ring, and described basic ring is arranged on the peripheral edge of described capacitance type sensing module 6.When described in user's finger touch during capacitance type sensing module 6, it can touch described basic ring.
When described capacitance type sensing module 6 is the virtual push button of electronic equipment a part of, described cover plate 61 is the cover sheet (Coverlens) of electronic equipment, that is, described capacitance type sensing module 6 shares cover sheet with electronic equipment.Relatively, the capacitance type sensing module adopting above-mentioned plated film mode to be formed is arranged on below cover sheet.Arrange capacitance type sensing module 6 for below described cover sheet, the set-up mode of described conducting element 69 is shown in Figure 30 and Figure 31.
Refer to Figure 30 and Figure 31, Figure 31 is the schematic diagram that the present invention arranges capacitance type sensing module below the cover sheet of electronic equipment.Figure 31 is the partial cutaway schematic view of Figure 30 along r-r ' direction.Be described for described capacitance type sensing module 6 below, similarly, following technical proposals is suitable for the capacitance type sensing module that above-mentioned plated film mode is formed too.Described electronic equipment 100 comprises cover sheet 101, and the encapsulating structure 5 of the capacitance-type sensing device of described capacitance type sensing module 6 is arranged on below cover sheet 101.Definition cover sheet 101 is being just virtual key region 103 to the region of the encapsulating structure 5 of capacitance-type sensing device.The contiguous virtual key region 103 of described conducting element 69 is arranged; it extends out from a lateral edges of described electronic equipment and extends to cover sheet 101 top edges; near virtual key region 103; thus; when finger touch virtual key region 103, described conducting element 69 can be touched simultaneously.
Change ground, in other embodiments, also can adopt conducting element 69 that one circle is set around described cover sheet 101 edge, or arrange around the side below cover sheet 101, it should be noted that, herein around the upper edge and the lateral edge that comprise covering protection cover plate 101; Or arrange engraved structure near the virtual key region 103 of cover sheet 101, described conducting element 69 exposes from described engraved structure, when finger touch virtual key region 103, described conducting element 69 can be touched simultaneously.
In superincumbent each embodiment, described capacitance type sensing module 6 is arranged on the front of electronic equipment 100.So, in other embodiments, described capacitance type sensing module 6 also can be arranged on the back side or the side of electronic equipment 100.When capacitance type sensing module 6 is arranged on the back side or the side of electronic equipment 100, if when the entity part at side and the back side is metal, conducting element 69 can be omitted.
Refer to Figure 32, Figure 32 is the schematic diagram of the tft array substrate of the display device of electronic equipment 100.Described tft array substrate 70 comprises insulated substrate 701, display element 703, display driver chip 705 and capacitance-type sensing device.Described display driver chip 705 is for driving display element 703 display frame, and the two is arranged on the homonymy of insulated substrate 701.Described capacitance-type sensing device is as formed by the aforementioned TFT technique that adopts on the glass substrate.At this, the tft array substrate 70 of described capacitance-type sensing device and display device is together formed, the two shared insulated substrate 701.
The show electrode 713 that described display element 703 comprises switching transistor 711 and is connected with switching transistor 711.Wherein, described switching transistor 711 is thin film transistor (TFT).While formation switching transistor 711, form the transistor in the sensing unit of capacitance-type sensing device; While formation show electrode 713, form the sensing electrode in the sensing unit of capacitance-type sensing device.Correspondingly, described sensing electrode is identical with described show electrode 433 material.Herein, described sensing electrode and described show electrode 433 are made up of transparent conductive material.
Described display device is as being LCD display device or OLED display, and the display device of other suitable type.Preferably, described display device is OLED display.
The structure of electronic equipment
Refer to Figure 33, Figure 33 is the schematic diagram of a better embodiment of electronic equipment of the present invention.Described electronic equipment 200 is as being the various smart machines such as mobile phone, panel computer, TV, telechiric device, intelligent door lock, Wearable, intelligent wallet.Described electronic equipment 200 comprises sensing device 201.Described sensing device 201 is as the capacitance-type sensing device 1,2,30 etc. as described in for aforementioned each embodiment; Or described sensing device 201 is as the encapsulating structure 5 being aforesaid capacitance-type sensing device; Or described sensing device 201 is as the capacitive sensing system 3,4 as described in for aforementioned each embodiment; Or described sensing device 201 is as the capacitance type sensing module 6 etc. as described in for aforementioned each embodiment.
Because described electronic equipment 200 comprises described sensing device 201, the sensing precision of described sensing device 201 is higher, correspondingly, and the better user experience of described electronic equipment 200.
Although be open to describe the present invention with reference to each embodiment, be appreciated that these embodiments are illustrative, and scope of the present invention is not limited only to them.Many changes, amendment, interpolation and improvement are all possible.More generally, describe in the context of specific embodiments according to each embodiment disclosed by the invention.Function can be separated in a different manner during the course or combination in each embodiment disclosed by the invention, or utilizes different terms to describe.These and other change, amendment, adding and improve can in such as scope as defined in the claims disclosed by the invention subsequently.

Claims (38)

1. a capacitance type sensor, comprising:
Multiple sensing unit, described sensing unit comprises:
Sensing electrode, can be coupled to target object in a capacitive manner, and described sensing electrode is for loading reference signal; With
Sensing circuit, comprising:
Third transistor, for responding because of the close of target object or the change touching caused reference signal on sensing electrode, corresponding generation the second AC signal.
2. capacitance type sensor as claimed in claim 1, it is characterized in that: described third transistor comprises the 3rd control electrode, the 5th transmission electrode and the 6th transmission electrode, 3rd control electrode and sensing electrode are two electrodes, 3rd control electrode connects sensing electrode, or the 3rd control electrode and sensing electrode are same electrode.
3. capacitance type sensor as claimed in claim 2, it is characterized in that: when the 3rd control electrode and sensing electrode are two electrodes, the 3rd control electrode directly connects sensing electrode, or the 3rd control electrode connects sensing electrode by resistance.
4. capacitance type sensor as claimed in claim 2, it is characterized in that: described third transistor is field effect transistor, the grid of described field effect transistor is used as the 3rd control electrode, and source electrode and the one in drain electrode are used as the 5th transmission electrode, another one is used as the 6th transmission electrode.
5. capacitance type sensor as claimed in claim 2, is characterized in that: described 5th transmission electrode is used for being connected with a current source, and the 6th transmission electrode is for transmitting the second AC signal.
6. capacitance type sensor as claimed in claim 2, it is characterized in that: described capacitance type sensor comprises differential pair tube, described differential pair tube is made up of the third transistor of adjacent sensing unit.
7. capacitance type sensor as claimed in claim 6, it is characterized in that: described differential pair tube, for responding the change because of the close of target object or the caused reference signal of touch on sensing electrode, forms the second different AC signal respectively corresponding on the 6th transmission electrode of two third transistor.
8. capacitance type sensor as claimed in claim 7, is characterized in that: described the second different AC signal is differential current signal.
9. capacitance type sensor as claimed in claim 7, is characterized in that: described sensing circuit comprises the first switch element and second switch unit further; Described 5th transmission electrode is used for connecting a current source by described first switch element, and described first switch element is for controlling whether have current delivery between the 5th transmission electrode and described current source; Described second switch unit, for connecting described 3rd control electrode, controls whether to transmit described reference signal to described sensing electrode.
10. capacitance type sensor as claimed in claim 9, is characterized in that: described second switch unit be used on schedule interval transmission reference signal to described sensing electrode.
11. capacitance type sensors as claimed in claim 9, is characterized in that: described multiple sensing unit is array arrangement.
12. capacitance type sensors as claimed in claim 11, is characterized in that: the third transistor for a sensing unit:
For forming differential pair tube with the third transistor of adjacent sensing unit on line direction; Or/and
For forming differential pair tube with the third transistor of adjacent sensing unit on column direction.
13. capacitance type sensors as claimed in claim 7, is characterized in that: the third transistor of the sensing unit that the third transistor of each sensing unit is adjacent in timesharing and line direction and column direction all forms differential pair tube.
14. capacitance type sensors as claimed in claim 12, it is characterized in that: described capacitance type sensor comprises signal wire group further, one signal group is connected to few two sensing units, described signal wire group comprises the first signal wire, secondary signal line and the 3rd signal wire, and first, second, third signal wire extends along column direction respectively; Described first switch element is used for connecting described current source by described first signal wire;
For be arranged in same row two adjacent sensing units: the 6th transmission electrode of the third transistor of a sensing unit is used for being connected with secondary signal line, the 6th transmission electrode of the third transistor in another sensing unit is used for being connected with the 3rd signal wire; First switch element of described two adjacent sensing units is connected with same first signal wire.
15. capacitance type sensors as claimed in claim 14, is characterized in that: for be positioned at same a line two adjacent sensing units: the first switch element of described two adjacent sensing units is used for being connected with same current source by the first signal wire.
16. capacitance type sensors as claimed in claim 14, is characterized in that: the third transistor of the sensing unit of odd-numbered line connects secondary signal line; The third transistor of the sensing unit of even number line connects the 3rd signal wire.
17. capacitance type sensors as claimed in claim 14, it is characterized in that: described first signal wire, secondary signal line and the 3rd signal wire extend along column direction, for same signal wire group, described secondary signal line and described 3rd signal wire are arranged in order along line direction.
18. capacitance type sensors as claimed in claim 14, it is characterized in that: each row sensing unit connects a signal wire group, different lines sensing unit connects different signal wire groups.
19. capacitance type sensors as claimed in claim 14, it is characterized in that: described capacitance type sensor comprises sweep trace group further, described sweep trace group comprises the first sweep trace and the second sweep trace, and described first switch element comprises:
The first transistor, comprise the first control electrode, the first transmission electrode and the second transmission electrode, described first control electrode is connected with the first sweep trace, for responding sweep signal that the first sweep trace transmits and corresponding the first transmission electrode and the second transmission electrode whether electric connection that controls, first transmission electrode is connected with the first signal wire, and the second transmission electrode is connected with the 5th transmission electrode; With
Transistor seconds, comprise the second control electrode, the 3rd transmission electrode and the 4th transmission electrode, wherein, second control electrode connects the second sweep trace, for responding sweep signal that the second sweep trace transmits and corresponding the 3rd transmission electrode and the 4th transmission electrode whether electric connection that controls, the 3rd transmission electrode connects the second transmission electrode, the 4th transmission electrode connection the 5th transmission electrode.
20. capacitance type sensors as claimed in claim 19, it is characterized in that: described sweep trace group comprises three scan line and reference signal line further, described second switch unit comprises:
5th transistor, comprise the 5th control electrode, the 9th transmission electrode and the tenth transmission electrode, wherein, 5th control electrode connects three scan line, for responding sweep signal that three scan line transmits and corresponding the 9th transmission electrode and the tenth transmission electrode whether electric connection that controls, the 9th transmission electrode connects reference signal line, the tenth transmission electrode connection the 3rd control electrode; Described sensing electrode receives reference signal by the 5th transistor from reference signal line.
21. capacitance type sensors as claimed in claim 20, it is characterized in that: described sweep trace group comprises the 4th sweep trace further, described sensing circuit comprises the 7th transistor further, described 7th transistor comprises the 7th control electrode, the 13 transmission electrode and the 14 transmission electrode, described 7th control electrode connects the 4th sweep trace, described 13 transmission electrode connects the tenth transmission electrode, described 14 transmission electrode connects the 3rd control electrode, and the 13 transmission electrode and the 14 transmission electrode short circuit.
22. capacitance type sensors as claimed in claim 21, is characterized in that: described 7th transistor is used for and described 5th transistor alternate conduction.
23. capacitance type sensors as claimed in claim 19, is characterized in that: the first sweep trace is for connecting the first control electrode of same a line the first transistor, and the second sweep trace is for connecting the second control electrode of same row transistor seconds; Or the first sweep trace is for connecting the first control electrode of same row the first transistor, and the second sweep trace is for connecting the second control electrode of same a line transistor seconds.
24. capacitance type sensors as claimed in claim 21, is characterized in that: the sensing unit with a line shares same three scan line, same 4th sweep trace and same reference signal line.
25. capacitance type sensors as described in claim 20 or 21, it is characterized in that: described capacitance type sensor comprises substrate further, described substrate is for carrying described multiple sensing unit.
26. capacitance type sensors as claimed in claim 25, it is characterized in that: when described sensing electrode and described 3rd control electrode are two electrodes, described sensing circuit is arranged between described sensing electrode and described substrate, and in the structure of described sensing circuit, contact hole is set, described sensing electrode is connected with described 3rd control electrode by described contact hole; When described sensing electrode and described 3rd control electrode are same electrode, described 3rd control electrode is arranged compared to the 5th transmission electrode and the contiguous described substrate of the 6th transmission electrode.
27. capacitance type sensors as claimed in claim 26, is characterized in that: described sensing electrode covers described sensing circuit.
28. capacitance type sensors as claimed in claim 25, it is characterized in that: described capacitance type sensor comprises ground wire further, the homonymy of described substrate is arranged on described multiple sensing unit, described ground wire is used for load-modulate signal, do not have target object close to or touch described sensing electrode time, the modulation signal that described reference signal loads relative to described ground wire remains unchanged.
29. capacitance type sensors as claimed in claim 28, it is characterized in that: described substrate is insulated substrate, each transistor in described sensing circuit all adopts thin film transistor (TFT), wherein, the grid of described thin film transistor (TFT) is used as control electrode, and source electrode and drain electrode are used separately as transmission electrode.
30. capacitance type sensors as claimed in claim 29, it is characterized in that: described capacitance type sensor comprises conductive layer further, described conductive layer and described multiple sensing unit are arranged on relative two sides of described substrate, described ground wire and described conductive layer are for transmitting identical modulation signal, and described modulation signal comprises ground signalling and drive singal.
31. capacitance type sensors as claimed in claim 1, is characterized in that: described capacitance type sensor is biometric information sensor.
32. capacitance type sensors as claimed in claim 5, it is characterized in that: described third transistor on sensing electrode because of target object close to or the variable quantity of reference signal caused by touching change and amplify, produce the first AC signal, and the first AC signal is superimposed on one second constant DC signal, described second AC signal of corresponding generation, wherein, the half of the first constant DC signal that provides for described current source of described second constant DC signal.
33. 1 kinds of capacitance-type sensing devices, comprise capacitance type sensor and control circuit, described control circuit performs sense operation for controlling described capacitance type sensor, wherein, described capacitance type sensor is the capacitance type sensor in claim 1-32 described in any one, described control circuit is integrated on a chips, and described capacitance type sensor is integrated into another chips.
34. capacitance-type sensing devices as claimed in claim 33, it is characterized in that: described control circuit is integrated into a control chip, the integrated circuit technology that described control chip adopts formation on semiconductor substrate to include CMOS (Complementary Metal Oxide Semiconductor) transistor is made, the integrated circuit technology that described capacitance type sensor adopts formation on insulated substrate to include thin film transistor (TFT) is made, wherein, described control chip is pressed together on and is formed on the insulated substrate of capacitance type sensor.
35. 1 kinds of capacitive sensing systems, comprise capacitance-type sensing device and power management chip, described power management chip is used for powering for described capacitance-type sensing device, wherein, described capacitive sensing device is the capacitance-type sensing device in claim 33-34 described in any one, described control circuit comprises earth terminal, described power management chip is used for providing modulation signal for described earth terminal, described control circuit is used for providing reference signal for described capacitive transducer, wherein, described reference signal raises with the rising of described modulation signal, reduce with the reduction of described modulation signal.
36. 1 kinds of capacitive sensing systems, comprise capacitance-type sensing device and power management chip, described power management chip is used for powering for described capacitance-type sensing device, wherein, described capacitive sensing device is the capacitance-type sensing device in claim 33-34 described in any one, and described power management chip is supplied to the supply voltage of capacitance type sensor higher than the supply voltage being supplied to the chip being integrated with control circuit.
37. 1 kinds of electronic equipments, comprise capacitance-type sensing device, and wherein, described capacitance-type sensing device is the capacitance-type sensing device in claim 33-34 described in any one.
38. 1 kinds of electronic equipments, comprise capacitive sensing system, and wherein, described capacitive sensing system is the capacitive sensing system in claim 35-36 described in any one.
CN201510612860.5A 2015-09-23 2015-09-23 Capacitance type sensor, sensing device, sensing system and electronic equipment Withdrawn CN105224155A (en)

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