CN105206755A - Organic light-emitting diode - Google Patents
Organic light-emitting diode Download PDFInfo
- Publication number
- CN105206755A CN105206755A CN201510672556.XA CN201510672556A CN105206755A CN 105206755 A CN105206755 A CN 105206755A CN 201510672556 A CN201510672556 A CN 201510672556A CN 105206755 A CN105206755 A CN 105206755A
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- layer
- white light
- emitting layer
- emitting
- ito anode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic light-emitting diode. The organic light-emitting diode comprises an MgAg cathode layer, an ITO anode layer and a glass substrate from inside to outside, and a power source is arranged between the MgAg cathode layer and the ITO anode layer. The organic light-emitting diode is characterized in that an electron transfer layer, white light-emitting layers and a hole transfer layer are sequentially arranged between the MgAg cathode layer and the ITO anode layer; the white light-emitting layers comprise the first white light-emitting layer, the second white light-emitting layer and the third white light-emitting layer which are arranged side by side at intervals; a red filtering film, a green filtering film and a blue filtering film are arranged between the ITO anode layer and the glass substrate side by side and correspond to the first white light-emitting layer, the second white light-emitting layer and the third white light-emitting layer respectively; a layer of insulating matter is further arranged on the outer side of the ITO anode layer to serve as a buffering layer. Power consumption is lowered, energy waste is avoided, and meanwhile driving voltage is reduced.
Description
Technical field
The present invention relates to a kind of Organic Light Emitting Diode.
Background technology
Organic Light Emitting Diode (OLED) can select glow color easily by the change of organic material chemical constitution, conventional OLED colorize technology has independent luminescent material method, colored filter film method, look conversion method and microresonator toning method, wherein, colored filter film method realizes full-color effect with a flood white light-emitting layer collocation colored filter, although technics comparing is simple, during for large size panel, then cause power consumption comparatively large, create certain energy waste.
Summary of the invention
For the problems referred to above, the invention provides a kind of Organic Light Emitting Diode, its structure is improved, reduce power consumption, avoid the waste of the energy, reduce driving voltage simultaneously.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the present invention is achieved through the following technical solutions:
A kind of Organic Light Emitting Diode, comprise MgAg cathode layer from inside to outside, ito anode layer and glass substrate, power supply is provided with between described MgAg cathode layer and ito anode layer, it is characterized in that, electron transfer layer is provided with in turn between described MgAg cathode layer and ito anode layer, white light-emitting layer and hole transmission layer, described white light-emitting layer comprises and being arranged side by side, the first white light-emitting layer kept at a certain distance away, second white light-emitting layer and the 3rd white light-emitting layer, be provided with between described ito anode layer and glass substrate side by side and respectively with the first white light-emitting layer, the red filter film that second white light-emitting layer is corresponding with the 3rd white light-emitting layer, green filter film and blue filter film, the outside of described ito anode layer is also provided with one deck megohmite insulant as resilient coating.
The thickness of described resilient coating is between 0.5nm-2nm, such as 1nm.
The invention has the beneficial effects as follows: realize compared with full-color effect with traditional employing one flood white light-emitting layer colored filter of arranging in pairs or groups, this structure adopts that be arranged side by side, that keep at a certain distance away the first white light-emitting layer, the second white light-emitting layer and the 3rd white light-emitting layer, and it is corresponding with red filter film, green filter film and blue filter film respectively, during for large size panel, effectively can reduce power consumption, avoid the waste of the energy, reduce driving voltage simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of Organic Light Emitting Diode of the present invention;
The mark implication of accompanying drawing is as follows:
1:MgAg negative electrode; 2: electron transfer layer; 3: the first white light-emitting layer; 4: the second white light-emitting layer; 5: the three white light-emitting layer; 6: hole transmission layer; 7:ITO anode; 8: red filter film; 9: green filter film; 10: blue filter film; 11: glass substrate.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, technical solution of the present invention is described in further detail, can better understand the present invention to make those skilled in the art and can be implemented, but illustrated embodiment is not as a limitation of the invention.
As shown in Figure 1, a kind of Organic Light Emitting Diode, comprise 1 layer, MgAg negative electrode from inside to outside, ito anode 7 layers and glass substrate 11, power supply is provided with between 1 layer, described MgAg negative electrode and ito anode 7 layers, wherein, electron transfer layer 2 is provided with in turn between 1 layer, described MgAg negative electrode and ito anode 7 layers, white light-emitting layer and hole transmission layer 6, described white light-emitting layer comprises and being arranged side by side, the first white light-emitting layer 3 kept at a certain distance away, second white light-emitting layer 4 and the 3rd white light-emitting layer 5, be provided with between described ito anode 7 layers and glass substrate 11 side by side and respectively with the first white light-emitting layer 3, second white light-emitting layer 4 and the corresponding red filter film 8 of the 3rd white light-emitting layer 5, green filter film 9 and blue filter film 10, the outside of described ito anode 7 layers is also provided with one deck megohmite insulant as resilient coating.The light sent from glass substrate 11 is respectively ruddiness, green glow and blue light, finally realizes the effect of full color.The outside that ito anode is 7 layers is also provided with the thin megohmite insulant of one deck as resilient coating, and such as layer of lithium fluoride, silicon dioxide layer etc., can reduce driving voltage, and wherein, the thickness of resilient coating is preferably between 0.5nm-2nm, such as 1nm.
Preferably, 1 layer, described MgAg negative electrode comprises three that be arranged side by side, corresponding with the first white light-emitting layer 3, second white light-emitting layer 4 and the 3rd white light-emitting layer 5 MgAg cathode electrode units.
Realize compared with full-color effect with traditional employing one flood white light-emitting layer colored filter of arranging in pairs or groups, this structure adopts the first white light-emitting layer 3, second white light-emitting layer 4 that be arranged side by side, that keep at a certain distance away and the 3rd white light-emitting layer 5, and it is corresponding with red filter film 8, green filter film 9 and blue filter film 10 respectively, during for large size panel, effectively can reduce power consumption, avoid the waste of the energy.
These are only the preferred embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in the technical field that other are relevant, be all in like manner included in scope of patent protection of the present invention.
Claims (6)
1. an Organic Light Emitting Diode, comprise MgAg negative electrode (1) layer from inside to outside, ito anode (7) layer and glass substrate (11), power supply is provided with between described MgAg negative electrode (1) layer and ito anode (7) layer, it is characterized in that, electron transfer layer (2) is provided with in turn between described MgAg negative electrode (1) layer and ito anode (7) layer, white light-emitting layer and hole transmission layer (6), described white light-emitting layer comprises and being arranged side by side, the first white light-emitting layer (3) kept at a certain distance away, second white light-emitting layer (4) and the 3rd white light-emitting layer (5), be provided with between described ito anode (7) layer and glass substrate (11) side by side and respectively with the first white light-emitting layer (3), second white light-emitting layer (4) and the corresponding red filter film (8) of the 3rd white light-emitting layer (5), green filter film (9) and blue filter film (10), the outside of described ito anode (7) layer is also provided with one deck megohmite insulant as resilient coating.
2. a kind of Organic Light Emitting Diode according to claim 1, is characterized in that, the thickness of described resilient coating is between 0.5nm-2nm.
3. a kind of Organic Light Emitting Diode according to claim 2, is characterized in that, the thickness of described resilient coating is 1nm.
4. a kind of Organic Light Emitting Diode according to claim 2, is characterized in that, described resilient coating is layer of lithium fluoride.
5. a kind of Organic Light Emitting Diode according to claim 2, is characterized in that, described resilient coating is silicon dioxide layer.
6. a kind of Organic Light Emitting Diode according to claim 4 or 5, it is characterized in that, described MgAg negative electrode (1) layer comprises three that be arranged side by side, corresponding with the first white light-emitting layer (3), the second white light-emitting layer (4) and the 3rd white light-emitting layer (5) MgAg cathode electrode units.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510672556.XA CN105206755A (en) | 2015-10-19 | 2015-10-19 | Organic light-emitting diode |
Applications Claiming Priority (1)
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CN201510672556.XA CN105206755A (en) | 2015-10-19 | 2015-10-19 | Organic light-emitting diode |
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CN105206755A true CN105206755A (en) | 2015-12-30 |
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CN201510672556.XA Pending CN105206755A (en) | 2015-10-19 | 2015-10-19 | Organic light-emitting diode |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106098954A (en) * | 2016-06-30 | 2016-11-09 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence device and preparation method thereof, display device |
Citations (5)
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CN1610459A (en) * | 2003-10-23 | 2005-04-27 | 精工爱普生株式会社 | Method for producing organic EL apparatus, organic EL apparatus and electronic instrument |
JP2008218300A (en) * | 2007-03-07 | 2008-09-18 | Seiko Epson Corp | Light emitting apparatus, manufacturing method for same, and electronic equipment |
CN104425556A (en) * | 2013-08-27 | 2015-03-18 | 精工爱普生株式会社 | Light emitting device, method of manufacturing light emitting device, and electronic equipment |
CN204271085U (en) * | 2014-12-05 | 2015-04-15 | 昆山工研院新型平板显示技术中心有限公司 | A kind of organic light-emitting display device |
CN205039182U (en) * | 2015-10-19 | 2016-02-17 | 苏州汉克山姆照明科技有限公司 | Organic light emitting diode |
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2015
- 2015-10-19 CN CN201510672556.XA patent/CN105206755A/en active Pending
Patent Citations (5)
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CN1610459A (en) * | 2003-10-23 | 2005-04-27 | 精工爱普生株式会社 | Method for producing organic EL apparatus, organic EL apparatus and electronic instrument |
JP2008218300A (en) * | 2007-03-07 | 2008-09-18 | Seiko Epson Corp | Light emitting apparatus, manufacturing method for same, and electronic equipment |
CN104425556A (en) * | 2013-08-27 | 2015-03-18 | 精工爱普生株式会社 | Light emitting device, method of manufacturing light emitting device, and electronic equipment |
CN204271085U (en) * | 2014-12-05 | 2015-04-15 | 昆山工研院新型平板显示技术中心有限公司 | A kind of organic light-emitting display device |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106098954A (en) * | 2016-06-30 | 2016-11-09 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence device and preparation method thereof, display device |
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Application publication date: 20151230 |