CN105206708A - Method for reducing fissure rate of double-side diffused silicon wafers and shortening time required by diffusion technology - Google Patents
Method for reducing fissure rate of double-side diffused silicon wafers and shortening time required by diffusion technology Download PDFInfo
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- CN105206708A CN105206708A CN201510590327.3A CN201510590327A CN105206708A CN 105206708 A CN105206708 A CN 105206708A CN 201510590327 A CN201510590327 A CN 201510590327A CN 105206708 A CN105206708 A CN 105206708A
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- moves
- silicon carbide
- diffusion
- fire door
- speed
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 26
- 239000010703 silicon Substances 0.000 title claims abstract description 26
- 238000005516 engineering process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004904 shortening Methods 0.000 title claims abstract description 7
- 235000012431 wafers Nutrition 0.000 title abstract 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 30
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 30
- 239000010453 quartz Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000012634 fragment Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 230000008642 heat stress Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a method for reducing the fissure rate of double-side diffused silicon wafers and shortening the time required by a diffusion technology. According to the method, phosphorus diffusion is conducted on the cleaned and textured silicon wafers. The method is characterized in that operation is performed at different speeds during boat feeding and boat discharging, vacant-propeller operation is performed at the highest speed required by a diffusion device, the diffusion operation time is shortened, and diffusion capacity is improved. The silicon wafers operate at lower speed when being fed into or discharged out of a furnace tube, heat stress is reduced, and the fissure rate of the diffused silicon wafers is reduced.
Description
Technical field
The present invention relates to a kind of method reducing the Double side diffusion fragment rate shortening diffusion technology time, belong to area of solar cell.
Background technology
At present, the production technology of solar cell mainly comprises cleaning and texturing, diffusion, etching, PECVD, silk screen printing and sintering etc.In the main manufacturing processes of solar cell, diffuse to form PN junction, PN junction is the core of solar cell, plays vital effect to photovoltaic conversion efficiency.Diffusion furnace tube temperature is at about 820 DEG C, diffusing procedure ambient temperature is at about 25 DEG C, and when diffusion silicon chip is into and out of boiler tube, the higher temperature difference makes silicon chip produce larger thermal stress, the silicon carbide paddle speed of service now makes compared with great Yi that silicon chip is hidden to be split, thus reduces cell piece yields.During one side diffusion, back-to-back, fragment rate is lower for silicon chip.After being spread changed into Double side diffusion by one side, each quartz boat groove only has a slice silicon chip, and silicon chip has lacked mutual support, and the higher temperature difference more easily makes that silicon chip is hidden to be split.If just reduced into and out of boat speed, the time of spreading into and out of boat can be longer, and diffusion production capacity can reduce, and production cost can increase.
Summary of the invention
The object of this invention is to provide a kind of Double side diffusion fragment rate that reduces and increase the method shortening the diffusion technology time.Adopt different from boat speed, run with the maximal rate required by diffusion facilities when empty oar runs, thus make the fragment rate of diffusion lower, spread into and out of the boat time shorter, thus diffusion production capacity can be promoted.Silicon chip runs from into and out of during boiler tube with lower speed, reduces thermal stress, reduces diffusion fragment rate.
Reduce the method that Double side diffusion fragment rate shortens the diffusion technology time, step is as follows:
(1) silicon chip clean for cleaning and texturing is filled quartz boat, the quartz boat filling silicon chip is positioned on silicon carbide paddle, opens fire door;
(2) silicon carbide paddle moves to front limit;
(3) silicon carbide paddle moves to lower limit;
(4) empty oar moves to rear spacing, closes fire door;
(5) open fire door, empty oar moves to front limit;
(6) empty oar moves to upper limit;
(7) silicon carbide paddle moves to rear spacing, closes fire door.
Reduce the method that Double side diffusion fragment rate shortens the diffusion technology time, concrete steps are as follows:
(1) silicon chip clean for cleaning and texturing is filled quartz boat, the quartz boat filling silicon chip is positioned on silicon carbide paddle, opens fire door;
(2) silicon carbide paddle first moves to the interface place of quartz boat and furnace tube port with the speed of 600 ~ 800mm/min, then moves to front limit place with the speed of 200 ~ 400mm/min;
(3) silicon carbide paddle moves to lower limit with the speed of 300 ~ 600mm/min;
(4) empty oar moves to rear spacing with the maximal rate 1000mm/min required by equipment, closes fire door;
(5) open fire door, empty oar moves to rear spacing with the maximal rate 1000mm/min required by equipment;
(6) silicon carbide paddle moves to upper limit with the speed of 300 ~ 600mm/min;
(7) silicon carbide paddle first moves to the interface place of quartz boat and furnace tube port with the speed of 600 ~ 800mm/min, then moves to rear spacing place with the speed of 200 ~ 300mm/min, closes fire door.
The invention has the advantages that: adopt the present invention different into and out of boat speed, make the fragment rate of diffusion lower, spread into and out of the boat time shorter, thus diffusion production capacity can be promoted; Silicon chip runs from into and out of during boiler tube with lower speed, reduces thermal stress, reduces diffusion fragment rate.
Embodiment
The following stated be only that reduction Double side diffusion fragment rate disclosed in this invention shortens the preferred implementation of diffusion technology time; should be understood that; for the person of ordinary skill of the art; do not depart from the present invention create the prerequisite of design under; can also make some distortion and improvement, these all belong to protection scope of the present invention.
Embodiment 1:
Reduce the method that Double side diffusion fragment rate shortens the diffusion technology time, its concrete steps are as follows:
(1) silicon chip clean for cleaning and texturing is filled quartz boat, the quartz boat filling silicon chip is positioned on silicon carbide paddle, opens fire door;
(2) silicon carbide paddle first moves to the interface place of quartz boat and furnace tube port with the speed of 700mm/min, then moves to front limit place with the speed of 300mm/min;
(3) silicon carbide paddle moves to lower limit with the speed of 500mm/min;
(4) empty oar moves to rear spacing with the maximal rate 1000mm/min required by equipment, closes fire door;
(5) open fire door, empty oar moves to rear spacing with the maximal rate 1000mm/min required by equipment.
(6) silicon carbide paddle moves to upper limit with the speed of 500mm/min;
(7) silicon carbide paddle first moves to the interface place of quartz boat and furnace tube port with the speed of 700mm/min, then moves to rear spacing place with the speed of 250mm/min, closes fire door.
Comparative example:
The Double side diffusion concrete steps of traditional handicraft are as follows:
(1) silicon chip clean for cleaning and texturing is filled quartz boat, the quartz boat filling silicon chip is positioned on silicon carbide paddle, opens fire door;
(2) silicon carbide paddle moves to front limit place with the speed of 400mm/min;
(3) silicon carbide paddle moves to lower limit with the speed of 50mm/min;
(4) empty oar moves to rear spacing with the speed of 650mm/min, closes fire door;
(5) open fire door, empty oar moves to rear spacing with the speed of 650mm/min;
(6) silicon carbide paddle moves to upper limit with the speed of 50mm/min;
(7) silicon carbide paddle moves to rear spacing place with the speed of 400mm/min, closes fire door.
Time and the diffusion fragment rate of embodiment and comparative example compare, and result is as shown in the table:
Can be found out by above-mentioned data, a kind of method reducing the Double side diffusion fragment rate shortening diffusion technology time provided by the present invention, by silicon carbide paddle in different phase with the different speeds of service, Double side diffusion fragment rate more than 0.3% can be reduced, shorten about 7 minutes diffusion times.
Claims (2)
1. reduce the method that Double side diffusion fragment rate shortens the diffusion technology time, it is characterized in that, step is as follows:
(1) silicon chip clean for cleaning and texturing is filled quartz boat, the quartz boat filling silicon chip is positioned on silicon carbide paddle, opens fire door;
(2) silicon carbide paddle moves to front limit;
(3) silicon carbide paddle moves to lower limit;
(4) empty oar moves to rear spacing, closes fire door;
(5) open fire door, empty oar moves to front limit;
(6) empty oar moves to upper limit;
(7) silicon carbide paddle moves to rear spacing, closes fire door.
2. a kind of method reducing the Double side diffusion fragment rate shortening diffusion technology time according to claim 1, is characterized in that:
(1) silicon chip clean for cleaning and texturing is filled quartz boat, the quartz boat filling silicon chip is positioned on silicon carbide paddle, opens fire door;
(2) silicon carbide paddle first moves to the interface place of quartz boat and furnace tube port with the speed of 600 ~ 800mm/min, then moves to front limit place with the speed of 200 ~ 400mm/min;
(3) silicon carbide paddle moves to lower limit with the speed of 300 ~ 600mm/min;
(4) empty oar moves to rear spacing with the maximal rate 1000mm/min required by equipment, closes fire door;
(5) open fire door, empty oar moves to rear spacing with the maximal rate 1000mm/min required by equipment;
(6) silicon carbide paddle moves to upper limit with the speed of 300 ~ 600mm/min;
(7) silicon carbide paddle first moves to the interface place of quartz boat and furnace tube port with the speed of 600 ~ 800mm/min, then moves to rear spacing place with the speed of 200 ~ 300mm/min, closes fire door.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510590327.3A CN105206708A (en) | 2015-09-17 | 2015-09-17 | Method for reducing fissure rate of double-side diffused silicon wafers and shortening time required by diffusion technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510590327.3A CN105206708A (en) | 2015-09-17 | 2015-09-17 | Method for reducing fissure rate of double-side diffused silicon wafers and shortening time required by diffusion technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105206708A true CN105206708A (en) | 2015-12-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510590327.3A Pending CN105206708A (en) | 2015-09-17 | 2015-09-17 | Method for reducing fissure rate of double-side diffused silicon wafers and shortening time required by diffusion technology |
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| Country | Link |
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| CN (1) | CN105206708A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419997A (en) * | 2008-11-28 | 2009-04-29 | 宁波尤利卡太阳能科技发展有限公司 | Producing method for crystalline silicon solar cell PN junction |
| CN201835008U (en) * | 2010-10-15 | 2011-05-18 | 深圳市捷佳伟创微电子设备有限公司 | Soft landing diffusion furnace |
| CN102610696A (en) * | 2012-03-22 | 2012-07-25 | 常州亿晶光电科技有限公司 | Diffusion process for solar cell tube furnace |
| CN102916084A (en) * | 2012-10-25 | 2013-02-06 | 上海大学 | Continuous passing type diffusion method for silicon solar cell |
-
2015
- 2015-09-17 CN CN201510590327.3A patent/CN105206708A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419997A (en) * | 2008-11-28 | 2009-04-29 | 宁波尤利卡太阳能科技发展有限公司 | Producing method for crystalline silicon solar cell PN junction |
| CN201835008U (en) * | 2010-10-15 | 2011-05-18 | 深圳市捷佳伟创微电子设备有限公司 | Soft landing diffusion furnace |
| CN102610696A (en) * | 2012-03-22 | 2012-07-25 | 常州亿晶光电科技有限公司 | Diffusion process for solar cell tube furnace |
| CN102916084A (en) * | 2012-10-25 | 2013-02-06 | 上海大学 | Continuous passing type diffusion method for silicon solar cell |
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Application publication date: 20151230 |