CN105206547A - Method for measuring double image alignment precision - Google Patents
Method for measuring double image alignment precision Download PDFInfo
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- CN105206547A CN105206547A CN201510627068.7A CN201510627068A CN105206547A CN 105206547 A CN105206547 A CN 105206547A CN 201510627068 A CN201510627068 A CN 201510627068A CN 105206547 A CN105206547 A CN 105206547A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention belongs to the field of semiconductor fabrication and discloses a method for measuring the double image alignment precision. The method comprises the steps of firstly, providing a silicon chip, wherein the silicon chip is provided with a first film masking layer, a second film masking layer and a substrate in sequence from top to bottom; then etching the first film masking layer for forming a first pattern; subsequently, etching the second film masking layer for forming a second pattern; then judging whether an alignment deviation exists between the first pattern and the second pattern or not, and if an alignment mark layer is formed, considering that the alignment deviation exists; finally, measuring the alignment mark layer, and obtaining the alignment offset. The method is particularly applicable to alignment precision measurement of double patterns formed on the same substrate, the alignment mark layer is easy to collect, signal intensity of an alignment mark is greatly improved, and the alignment offset of the double patterns can be obtained conveniently and accurately within a short time.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, relate to a kind of method measuring dual imaging alignment precision.
Background technology
Along with the continuous progress of integrated circuit fabrication process, the volume of semiconductor device and critical size are just becoming more and more less.Along with critical size is more and more less, IC industry faces increasing challenge.The photoetching resolution such as photoetching double exposure strengthens technology realizing 32nm technology node and has been sent to great expectations.Due to the raising of the productivity ratio that the progress of mask aligner software and hardware technology causes, the significance level of double-pattern exposure technology grows with each passing day, and has become current industry 32nm mainstream solution.
The starting point of double-pattern exposure technology is two layer patterns design configuration exceeding mask aligner limiting resolution being split into the resolution that mask aligner can reach, and produce corresponding two pieces of reticle, then by the double-pattern metallization processes of photoetching-etching-photoetching-etching, the final graphics of demand is finally reached.
Due to the second time exposure of double-pattern exposure be first time exposure figure basis or gap in carry out, this technique requires higher to the alignment precision of photoetching, requires the alignment precision of about 2nm.The figure that double-pattern exposure is formed, in superposition shape, finally defines whole device architecture.This structure is just as mansion, base, if the deviation stacked is too large, total will be made to lose efficacy, and therefore, the alignment precision of photoetching seems particularly important.
The height of the alignment precision of existing photoetching is characterized by alignment precision measurement usually, namely after the etching technics of this layer terminates, namely needs the alignment condition measuring current layer etching technics and front layer process.In reticle, normally design some three-back-shaped marks, copy on silicon chip by etching technics, after each etching technics completes, judged the deviation of X, Y-direction by the mark that optical measurement two is three-back-shaped.
The three-dimensional structure of various components and parts is broken down into the litho pattern of tens layers two dimension aborning.In order to reach good device performance, each layer photoetching figure will ensure accurate aligning alignment (Overlay) between layers.Alignment precision measures normally each placement alignment precision measurement pattern (OverlayMark) in the figure of upper and lower two lithography layers, by measuring the deviation of the relative position of two alignment figures, ensures the aligning between two-layer litho pattern.
Please refer to Fig. 1 a-1d, Fig. 1 a-1d is the silicon chip structural representation of alignment precision method of measurement in prior art, and first graphical photoresist etches the first hard mask and the second hard mask (as shown in Figure 1a) respectively; Then the overlay mark center (as shown in Figure 1 b) of ground floor is calculated by the optical lens of special measurement equipment; Then the overlay mark center (as illustrated in figure 1 c) of the second layer is calculated by the optical lens of special measurement equipment; Finally the coordinate of two-layer overlay mark center is subtracted each other, obtain departure (as shown in Figure 1 d).
But alignment precision method of measurement step is comparatively loaded down with trivial details in prior art, therefore, those skilled in the art need badly provides a kind of method measuring dual imaging alignment precision, and fast and easy obtains the alignment precision of dual imaging accurately.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method measuring dual imaging alignment precision, and fast and easy obtains the alignment precision of dual imaging accurately.
In order to solve the problems of the technologies described above, the invention provides a kind of method measuring dual imaging alignment precision, comprising the following steps:
Step S01, provides one piece of silicon chip, and described silicon chip has the first mask layer, the second mask layer and substrate from top to bottom successively;
Step S02, adopts photoetching and etching technics to etch described first mask layer, has multiple first figure to make described first mask layer;
Step S03, adopts photoetching and etching technics to etch described second mask layer, has multiple second graph to make described second mask layer;
Step S04, judges whether there is alignment deviation between the first figure and second graph; Wherein, as formed the alignment mark layer be jointly made up of the first mask layer and the second mask layer, then there is alignment deviation, proceed step S05, as do not formed the alignment mark layer be jointly made up of the first mask layer and the second mask layer, then there is not alignment deviation, terminating measuring process;
Step S05, measures described alignment mark layer, draws alignment side-play amount.
Preferably, in described step S05, ESEM is adopted to measure described alignment mark layer.
Preferably, in described step S02, specifically comprise the following steps:
First, the first mask layer is coated with the first anti-reflecting layer and the first photoresist layer successively;
Then, patterning first photoresist layer to form the first figure, and by the first Graphic transitions on described first mask layer;
Finally, the first anti-reflecting layer and the first photoresist layer is removed.
Preferably, the etching stopping of described first figure is in the upper surface of described second mask layer.
Preferably, wet-etching technology or dry etch process is adopted to remove described first anti-reflecting layer and the first photoresist layer.
Preferably, in described step S03, specifically comprise the following steps:
First, the second mask layer is coated with the second anti-reflecting layer and the second photoresist layer successively;
Then, second graph to form second graph, and is transferred on described second mask layer by patterning second photoresist layer;
Finally, the second anti-reflecting layer and the second photoresist layer is removed.
Preferably, the etching stopping of described second graph is in the upper surface of described substrate.
Preferably, described second anti-reflecting layer covers described first figure.
Preferably, wet-etching technology or dry etch process is adopted to remove the second anti-reflecting layer and the second photoresist layer.
Compared with existing scheme, the invention provides a kind of method measuring dual imaging alignment precision, first on the first mask layer, the first figure is formed, then on the second mask layer, second graph is formed, by contrasting the first figure and second graph, judging whether to occur alignment deviation, as formed corresponding alignment mark layer, and then obtaining alignment side-play amount by measuring the live width be etched.The alignment precision that the present invention is particularly useful for the double-pattern formed on same layer substrate is measured, alignment mark layer in the present invention is easy to gather, greatly strengthen the signal strength signal intensity of alignment mark, the alignment side-play amount obtaining dual imaging accurately can be facilitated at short notice.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 a-1d is the silicon chip structural representation of alignment precision method of measurement in prior art;
Fig. 2 is the schematic flow sheet of the method measuring dual imaging alignment precision in the present invention;
Fig. 3 a-3e is the silicon chip structural representation of alignment precision method of measurement in the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.Those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Above-mentioned and other technical characteristic and beneficial effect, by conjunction with the embodiments and the method for accompanying drawing to measurement dual imaging alignment precision of the present invention be described in detail.Fig. 2 is the schematic flow sheet of the method measuring dual imaging alignment precision in the present invention; Fig. 3 a-3e is the silicon chip structural representation of alignment precision method of measurement in the present invention.
As shown in Figure 2, the invention provides a kind of method measuring dual imaging alignment precision, comprise the following steps:
Step S01, provides one piece of silicon chip, and silicon chip has the first mask layer 10, second mask layer 20 and substrate 30 (as shown in Figure 3 a) from top to bottom successively.
Concrete, in this step, this area conventional means can be adopted, material forms each level.
Step S02, adopts photoetching and etching technics to etch described first mask layer 10, has multiple first figure 40 (as shown in Fig. 3 b, 3c) to make the first mask layer 10.
Concrete, specifically comprise the following steps in this step: first, the first mask layer 10 is coated with the first anti-reflecting layer 11 and the first photoresist layer 12 successively; Then, patterning first photoresist layer 12 is to form the first figure, and by the first Graphic transitions to described first mask layer 10, the etching stopping of the first figure 40 is in the upper surface of the second mask layer 20; Finally, remove the first anti-reflecting layer 11 and the first photoresist layer 12, wet-etching technology or dry etch process wherein can be adopted to remove the first anti-reflecting layer 11 and the first photoresist layer 12.
Step S03, adopts photoetching and etching technics to etch described second mask layer 20, has multiple second graph 50 (as shown in Fig. 3 d, 3e) to make the second mask layer 20.
Concrete, this step specifically comprises the following steps: first, and the second mask layer 20 is coated with the second anti-reflecting layer 21 and the second photoresist layer 22 successively, and wherein, the second anti-reflecting layer 21 covers described first figure 40; Then, second graph to form second graph, and is transferred on the second mask layer 20 by patterning second photoresist layer 22, and the etching stopping of second graph 50 is in the upper surface of substrate 30; Finally, remove the second anti-reflecting layer 21 and the second photoresist layer 22, wherein, adopt wet-etching technology or dry etch process to remove the second anti-reflecting layer 21 and the second photoresist layer 22.
Step S04, judges whether there is alignment deviation between the first figure 40 and second graph 50; Wherein, as formed the alignment mark layer be jointly made up of the first mask layer 10 and the second mask layer 20, then there is alignment deviation, proceed step S05, as do not formed the alignment mark layer be jointly made up of the first mask layer 10 and the second mask layer 20, then there is not alignment deviation, terminate measuring process.
Concrete, alignment mark layer in this step is the overlapping region of the first figure 40 and second graph 50, alignment deviation is there is by checking alignment mark layer to judge whether, as the first figure 40 is completely overlapping with second graph 50, then there is not alignment deviation, as the first figure 40 has occurred overlapping region and Non-overlapping Domain with second graph 50, then show to have occurred alignment deviation.There is not alignment deviation then to stop measuring, as there is alignment deviation, then carry out continuation and measure alignment side-play amount.
Step S05, measures described alignment mark layer, draws alignment side-play amount.
Concrete, in the present embodiment, preferred employing ESEM is measured described alignment mark layer, alignment mark layer in this step is the overlapping region of the first figure 40 and second graph 50, owing to there is deviation between the first figure 40 and second graph 50, the live width of Non-overlapping Domain and alignment side-play amount, the live width (i.e. the live width of overlapping region) of alignment mark layer is gone in the first figure 40 and the bus reductions of second graph 50, can draw alignment side-play amount.
In sum, the invention provides a kind of method measuring dual imaging alignment precision, first on the first mask layer 10, the first figure 40 is formed, then on the second mask layer 20, second graph 50 is formed, by contrasting the first figure 40 and second graph 50, judging whether to occur alignment deviation, as formed corresponding alignment mark layer, and then obtaining alignment side-play amount by measuring the live width be etched.The alignment precision that the present invention is particularly useful for the double-pattern formed on same layer substrate is measured, alignment mark layer in the present invention is easy to gather, greatly strengthen the signal strength signal intensity of alignment mark, the alignment side-play amount obtaining dual imaging accurately can be facilitated at short notice.
Above-mentioned explanation illustrate and describes some preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in invention contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the present invention, then all should in the protection range of claims of the present invention.
Claims (9)
1. measure a method for dual imaging alignment precision, it is characterized in that, comprise the following steps:
Step S01, provides one piece of silicon chip, and described silicon chip has the first mask layer, the second mask layer and substrate from top to bottom successively;
Step S02, adopts photoetching and etching technics to etch described first mask layer, has multiple first figure to make described first mask layer;
Step S03, adopts photoetching and etching technics to etch described second mask layer, has multiple second graph to make described second mask layer;
Step S04, judges whether there is alignment deviation between the first figure and second graph; Wherein, as formed the alignment mark layer be jointly made up of the first mask layer and the second mask layer, then there is alignment deviation, proceed step S05, as do not formed the alignment mark layer be jointly made up of the first mask layer and the second mask layer, then there is not alignment deviation, terminating measuring process;
Step S05, measures described alignment mark layer, draws alignment side-play amount.
2. the method for measurement dual imaging alignment precision according to claim 1, is characterized in that, in described step S05, adopts ESEM to measure described alignment mark layer.
3. the method for measurement dual imaging alignment precision according to claim 1, is characterized in that, in described step S02, specifically comprise the following steps:
First, the first mask layer is coated with the first anti-reflecting layer and the first photoresist layer successively;
Then, patterning first photoresist layer to form the first figure, and by the first Graphic transitions on described first mask layer;
Finally, the first anti-reflecting layer and the first photoresist layer is removed.
4. the method for measurement dual imaging alignment precision according to claim 1, is characterized in that, in step S02, the etching stopping of described first figure is in the upper surface of described second mask layer.
5. the method for measurement dual imaging alignment precision according to claim 3, is characterized in that, adopts wet-etching technology or dry etch process to remove described first anti-reflecting layer and the first photoresist layer.
6. the method for measurement dual imaging alignment precision according to claim 1, is characterized in that, in described step S03, specifically comprise the following steps:
First, the second mask layer is coated with the second anti-reflecting layer and the second photoresist layer successively;
Then, second graph to form second graph, and is transferred on described second mask layer by patterning second photoresist layer;
Finally, the second anti-reflecting layer and the second photoresist layer is removed.
7. the method for measurement dual imaging alignment precision according to claim 1, is characterized in that, in step S03, the etching stopping of described second graph is in the upper surface of described substrate.
8. the method for measurement dual imaging alignment precision according to claim 6, is characterized in that, described second anti-reflecting layer covers described first figure.
9. the method for measurement dual imaging alignment precision according to claim 6, is characterized in that, adopts wet-etching technology or dry etch process to remove the second anti-reflecting layer and the second photoresist layer.
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Cited By (9)
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| CN109177518A (en) * | 2018-08-01 | 2019-01-11 | 歌尔股份有限公司 | The determination method, apparatus and electronic equipment of spray printing web plate positional shift state |
| CN109307981A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Photoetching process for GPP production |
| CN110364449A (en) * | 2019-07-24 | 2019-10-22 | 上海华力集成电路制造有限公司 | The monitoring method of grid oxygen nitrating annealing temperature |
| CN113206020A (en) * | 2021-04-08 | 2021-08-03 | 深圳市时代速信科技有限公司 | Evaporation offset measurement method and system of evaporation table |
| CN113835309A (en) * | 2021-09-24 | 2021-12-24 | 长江先进存储产业创新中心有限责任公司 | Detection structure and detection method for alignment precision of double imaging process |
| CN115145127A (en) * | 2022-09-05 | 2022-10-04 | 上海传芯半导体有限公司 | Detection structure of alignment precision, preparation method thereof and detection method of alignment precision |
| CN115390374A (en) * | 2022-11-01 | 2022-11-25 | 睿力集成电路有限公司 | Overlay error measurement method and method for controlling semiconductor manufacturing process |
| CN115793413A (en) * | 2022-12-22 | 2023-03-14 | 上海铭锟半导体有限公司 | Super-resolution pattern realization method and device based on alignment difference and double photoetching |
| WO2023206633A1 (en) * | 2022-04-24 | 2023-11-02 | 长鑫存储技术有限公司 | Measurement image detection method, apparatus, semiconductor device, and storage medium |
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| CN115390374A (en) * | 2022-11-01 | 2022-11-25 | 睿力集成电路有限公司 | Overlay error measurement method and method for controlling semiconductor manufacturing process |
| CN115793413A (en) * | 2022-12-22 | 2023-03-14 | 上海铭锟半导体有限公司 | Super-resolution pattern realization method and device based on alignment difference and double photoetching |
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