CN105197872A - Al-Ge eutectic bonding pretreatment method and bonding method - Google Patents
Al-Ge eutectic bonding pretreatment method and bonding method Download PDFInfo
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- CN105197872A CN105197872A CN201410231382.9A CN201410231382A CN105197872A CN 105197872 A CN105197872 A CN 105197872A CN 201410231382 A CN201410231382 A CN 201410231382A CN 105197872 A CN105197872 A CN 105197872A
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Abstract
The invention provides an Al-Ge eutectic bonding pretreatment method and a bonding method. The Al-Ge eutectic bonding pretreatment method comprises providing a first substrate with a germanium top layer on the surface and a second substrate with an aluminum top layer on the surface, and feeding gas with inactive chemical property to the substrates to remove air so that the germanium top layer and aluminum top layer oxidation is prevented. The method is free of reduction gas for removing oxide layers on the aluminum and germanium surfaces, and adopts gas with inactive chemical property to remove air so that aluminum and germanium oxidation is prevented. In pre-bonding and bonding, only non-active gas (such as N2) or inert gas exists and reduction gas (usually such as H2) is avoided so that processes are simplified, a cost is reduced and process safety is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of Al-Ge eutectic bonding preprocess method and bonding method.
Background technology
Rapidly, products application has arrived the every aspect of national life in MEMS technology development recent years.Technical development and the product development of too busy to get away MEMS are popularized in the foundation of intelligent society and the development of Internet of Things.The product size of present MEMS has more and more less trend, and power consumption requirements is also more and more higher.WLCSP can reduce product size as an emerging technology under the prerequisite that MEMS integrated level is more and more higher, reduces power consumption and cost.
Al-Ge has lower eutectic temperature as the material with general semiconductor compatibility, meets the thermal balance requirement of IC wafer.After Al-Ge eutectic bonding, have good electrical connection properties and air-tightness, the requirement of MEMS and IC device to electrical connection and the requirement of closed cavity vacuum can be met completely.But the surface of Al and Ge is all highly susceptible to oxidation, need when bonding to introduce reducibility gas (as H
2) with reduction-oxidation layer, the membership that adds of reducibility gas increases cost, also has the hidden danger of secure context.
Summary of the invention
Technical problem to be solved by this invention is, Al-Ge eutectic bonding preprocess method and bonding method are provided, it does not adopt reducibility gas to remove the oxide layer on aluminium and germanium surface, but adopt the inactive air scavenge air of chemical property, prevent aluminium and germanium oxidation, reduce bonding cost, improve bonding security.
In order to solve the problem, the invention provides a kind of Al-Ge eutectic bonding preprocess method, the first substrate comprising the steps: to provide a surface to have germanium top layer and a surface have the second substrate of aluminium top layer; Be filled with the inactive gas of chemical property, deaeration, prevent described germanium top layer and aluminium top layer oxidized.
The present invention also provides a kind of bonding method, and the first substrate comprising the steps: to provide a surface to have germanium top layer and a surface have the second substrate of aluminium top layer; Be filled with the inactive gas of chemical property, deaeration, prevent described germanium top layer and aluminium top layer oxidized; With described germanium top layer and described aluminium top layer for carrying out bonding to described first substrate and the second substrate in intermediate layer.
Before described bonding steps, comprise one further with described germanium top layer and described aluminium top layer for the step of pre-bonding is carried out in intermediate layer to described first substrate and the second substrate: para-linkage cavity is evacuated to preset value, and heat described first substrate and the second substrate to pre-bonding temperature; The aluminium top layer of the germanium top layer of described first substrate and described second substrate is fitted, and applies pre-bonding pressure, keep certain hour.
Described pre-bonding temperature is 380 ~ 400 degrees Celsius, and described pre-bonding pressure is 5000 ~ 40000 newton, and described pre-bonding time is 3 ~ 15 minutes.
Before described bonding steps, before being filled with the inactive gas of chemical property, comprise a step of being aimed at described aluminium top layer by described germanium top layer further.In alignment procedures, described first substrate and described second substrate are not in contact with each other.
After described bonding steps, comprise a step-down cooling step further: cancel bonding pressure; Be filled with the inactive gas of chemical property; Be cooled to room temperature.
The bonding temperature of described bonding steps is 420 ~ 450 degrees Celsius, and bonding pressure is 20000 ~ 50000 newton, and bonding time is 5 ~ 30 minutes.
Described germanium top layer thickness is 0.35 ~ 1 micron, and the thickness of described aluminium top layer is 0.5 ~ 2 micron, and the thickness of described aluminium top layer is greater than the thickness of described germanium top layer.
Described germanium top layer and described aluminium top layer are patterned germanium top layer and aluminium top layer, the figure of described germanium top layer is of a size of 10 ~ 100 microns, the figure of described aluminium top layer is of a size of 10 ~ 100 microns, and the size of the figure of described aluminium top layer is greater than the size of the figure of described germanium top layer.
The invention has the advantages that, do not adopt reducibility gas to remove the oxide layer on aluminium and germanium surface, but adopt the inactive air scavenge air of chemical property, prevent aluminium and germanium oxidation.The inactive gas of chemical property is only there is (as N in pre-bonding and bonding process
2or inert gas), without the need to reducibility gas (normally H
2) introducing, Simplified flowsheet, reduces costs, and improves technological operation security.
Accompanying drawing explanation
Fig. 1 is the step schematic diagram of the preprocess method of Al-Ge eutectic bonding of the present invention;
Figure 2 shows that the step schematic diagram of bonding method of the present invention;
Fig. 3 A ~ Fig. 3 D is the process chart of the method for Al-Ge eutectic bonding of the present invention;
Fig. 4 is pre-bonding steps schematic diagram.
Detailed description of the invention
Elaborate below in conjunction with the detailed description of the invention of accompanying drawing to the pretreated method of Al-Ge eutectic bonding provided by the invention and bonding method.
See Fig. 1, Al-Ge eutectic bonding preprocess method of the present invention comprises the steps:
Step S10, the first substrate providing a surface to have germanium top layer and a surface have the second substrate of aluminium top layer.
Described first substrate and the second substrate can be silicon substrate.In order to make accompanying drawing more clearly can show the present invention, the size of germanium top layer and aluminium top layer is exaggerated in the accompanying drawings.In this embodiment, the mode that described germanium top layer and aluminium top layer are deposited by metal is formed.And described germanium top layer and aluminium top layer carry out graphical treatment, form patterned germanium top layer and patterned aluminium top layer.The thickness of described germanium top layer is 0.35 ~ 1 micron, and the thickness of described aluminium top layer is 0.5 ~ 2 micron.Preferably, the thickness of described aluminium top layer is greater than the thickness of described germanium top layer.The figure of described germanium top layer is of a size of 10 ~ 100 microns, and the figure of described aluminium top layer is of a size of 10 ~ 100 microns.Preferably, the size of the figure of described aluminium top layer is greater than the size of the figure of described germanium top layer.The size of the size of the figure of described aluminium top layer and the figure of described germanium top layer refers to the length of side of the most minor face of bonding surface.Preferably, the width of the width of the figure of described germanium top layer and the figure of described aluminium top layer is all greater than 15 microns.
Step S11, be filled with the inactive gas of chemical property, deaeration, prevent described germanium top layer and aluminium top layer oxidized.
In the prior art, by passing into reducibility gas, the oxide layer of germanium topsheet surface and aluminium topsheet surface is reduced.And in this step, be then protect germanium topsheet surface and aluminium topsheet surface by being filled with the inactive gas of chemical property, prevent it oxidized.The present invention does not introduce reducibility gas, Simplified flowsheet, reduces costs, and improves technological operation security.The inactive gas of described chemical property comprises nitrogen and inert gas.
See Fig. 2, bonding method of the present invention comprises the steps: step S20, and the first substrate providing a surface to have germanium top layer and a surface have the second substrate of aluminium top layer; Step S21, aims at described germanium top layer with described aluminium top layer; Step S22, is filled with the inactive gas of chemical property, deaeration, prevent described germanium top layer and aluminium top layer oxidized; Step S23, with described germanium top layer and described aluminium top layer for carrying out pre-bonding to described first substrate and the second substrate in intermediate layer; Step S24, with described germanium top layer and described aluminium top layer for carrying out bonding to described first substrate and the second substrate in intermediate layer.
Fig. 3 A ~ Fig. 3 D is the process chart of bonding method of the present invention.
See Fig. 3 A and step S20, the first substrate 300 providing a surface to have germanium top layer 301 and a surface have the second substrate 310 of aluminium top layer 311.Described first substrate 300 and the second substrate 310 can be silicon substrate.In order to make accompanying drawing more clearly can show the present invention, the size of germanium top layer 301 and aluminium top layer 311 is exaggerated in the accompanying drawings.In this embodiment, the mode that described germanium top layer 301 and aluminium top layer 311 are deposited by metal is formed.The thickness of described germanium top layer 301 is 0.35 ~ 1 micron, and the thickness of described aluminium top layer 311 is 0.5 ~ 2 micron.Preferably, the thickness of described aluminium top layer 311 is greater than the thickness of described germanium top layer 301.The figure of described germanium top layer 301 is of a size of 10 ~ 100 microns, and the figure of described aluminium top layer 311 is of a size of 10 ~ 100 microns.Preferably, the size of the figure of described aluminium top layer 311 is greater than the size of the figure of described germanium top layer 301.The size of the size of the figure of described aluminium top layer 311 and the figure of described germanium top layer 301 refers to the length of side of the most minor face of bonding surface.Preferably, the width of the width of the figure of described germanium top layer 301 and the figure of described aluminium top layer 311 is greater than 15 microns.
See Fig. 3 B and step S21, the aluminium top layer 311 of the germanium top layer 301 of described first substrate with described second substrate is aimed at.In this embodiment, the germanium top layer 301 of described first substrate is aimed at the aluminium top layer 311 of described second substrate, but is not in contact with each other.After aligning, the germanium top layer 301 of described first substrate is with the non-touching advantage of aluminium top layer 311 of described second substrate, under follow-up vacuum environment the germanium top layer 301 of described first substrate and aluminium top layer 311 key of described second substrate with after can obtain with bonding after the consistent vacuum of the cavity that formed.
See step S22, be filled with the inactive gas of chemical property, deaeration, prevent described germanium top layer and aluminium top layer oxidized.The object being filled with the inactive gas of chemical property discharges the air in bonding cavity, and to prevent, germanium top layer 301 in subsequent step is surperficial and aluminium top layer 311 surface is oxidized.In the prior art, by passing into reducibility gas, the oxide layer on germanium top layer 301 surface and aluminium top layer 311 surface is reduced.And in this step, be then protect germanium top layer 301 surface and aluminium top layer 311 surface by being filled with the inactive gas of chemical property, prevent it oxidized.The present invention does not introduce reducibility gas, Simplified flowsheet, reduces costs, and improves technological operation security.The inactive gas of described chemical property comprises nitrogen and inert gas.
See Fig. 3 C and step S23, with described germanium top layer and described aluminium top layer for carrying out pre-bonding to described first substrate and the second substrate in intermediate layer.See Fig. 4, described pre-bonding process comprises the steps: step S40, and para-linkage cavity is evacuated to preset value, and heats described first substrate and the second substrate extremely pre-bonding temperature; Step S41, fits the aluminium top layer of the germanium top layer of described first substrate and described second substrate, and applies pre-bonding pressure, keeps certain hour.
The described preset value vacuumized is determined according to the needs of different bonding apparatus, and general normal pressure is with down to 5e
-5millibar.Wherein, 1 bar=100000 handkerchief.The temperature of described pre-bonding is 380 ~ 400 degrees Celsius, the demand different according to user, selects the pre-bonding temperature be applicable to.The object of the pre-bonding pressure of described applying makes the Temperature Distribution in the first substrate 300 and the second substrate 310 more even, improves bonding quality.Described pre-bonding pressure is 5000 ~ 40000 newton, and described pre-bonding time is 3 ~ 15 minutes.The demand different according to user, selects applicable pre-bonding pressure and pre-bonding time.
See Fig. 3 D and step S24, for intermediate layer, bonding is carried out to described first substrate 300 and the second substrate 310 with described germanium top layer 301 and described aluminium top layer 311.Described bonding method is described first substrate 300 and the second substrate 310 to the bonding temperature of heating, and applies bonding pressure, keeps certain hour, completes bonding.Described bonding temperature is 420 ~ 450 degrees Celsius, and described bonding pressure is 20000 ~ 50000 newton, and described bonding time is 5 ~ 30 minutes.The demand different according to user, selects the bonding temperature, bonding pressure and the bonding time that are applicable to.
After bonding steps S24, comprise a step-down cooling step further: cancel bonding pressure; The inactive gas of chemical property is filled with in bonding cavity; Be cooled to room temperature.In this step, in bonding cavity, the object of the inactive gas of chemical property is filled with: one is by gas circulation temperature lowering; Two is prevent when higher than room temperature, and the parts after bonding are oxidized.The inactive gas of described chemical property comprises nitrogen and inert gas.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. an Al-Ge eutectic bonding preprocess method, is characterized in that, the first substrate comprising the steps: to provide a surface to have germanium top layer and a surface have the second substrate of aluminium top layer; Be filled with the inactive gas of chemical property, deaeration, prevent described germanium top layer and aluminium top layer oxidized.
2. a bonding method, is characterized in that, the first substrate comprising the steps: to provide a surface to have germanium top layer and a surface have the second substrate of aluminium top layer; Be filled with the inactive gas of chemical property, deaeration, prevent described germanium top layer and aluminium top layer oxidized; With described germanium top layer and described aluminium top layer for carrying out bonding to described first substrate and the second substrate in intermediate layer.
3. bonding method according to claim 2, it is characterized in that, before described bonding steps, comprise one further with described germanium top layer and described aluminium top layer for the step of pre-bonding is carried out in intermediate layer to described first substrate and the second substrate: para-linkage cavity is evacuated to preset value, and heat described first substrate and the second substrate to pre-bonding temperature; The aluminium top layer of the germanium top layer of described first substrate and described second substrate is fitted, and applies pre-bonding pressure, keep certain hour.
4. bonding method according to claim 3, is characterized in that, the temperature of described pre-bonding is 380 ~ 400 degrees Celsius, and the pressure of described pre-bonding is 5000 ~ 40000 newton, and the time of described pre-bonding is 3 ~ 15 minutes.
5. bonding method according to claim 2, is characterized in that, before described bonding steps, before being filled with the inactive gas of chemical property, comprises a step of being aimed at described aluminium top layer by described germanium top layer further.
6. bonding method according to claim 5, is characterized in that, in alignment procedures, described first substrate and described second substrate are not in contact with each other.
7. bonding method according to claim 2, is characterized in that, after described bonding steps, comprises a step-down cooling step further: cancel bonding pressure; Be filled with the inactive gas of chemical property; Be cooled to room temperature.
8. bonding method according to claim 2, is characterized in that, the bonding temperature of described bonding steps is 420 ~ 450 degrees Celsius, and bonding pressure is 20000 ~ 50000 newton, and bonding time is 5 ~ 30 minutes.
9. bonding method according to claim 2, is characterized in that, described germanium top layer thickness is 0.35 ~ 1 micron, and the thickness of described aluminium top layer is 0.5 ~ 2 micron, and the thickness of described aluminium top layer is greater than the thickness of described germanium top layer.
10. bonding method according to claim 2, it is characterized in that, described germanium top layer and described aluminium top layer are patterned germanium top layer and aluminium top layer, the figure of described germanium top layer is of a size of 10 ~ 100 microns, the figure of described aluminium top layer is of a size of 10 ~ 100 microns, and the size of the figure of described aluminium top layer is greater than the size of the figure of described germanium top layer.
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| TW200934722A (en) * | 2007-10-10 | 2009-08-16 | Bosch Gmbh Robert | Composite comprising at least two semiconductor substrates and production method |
| CN101918304A (en) * | 2008-01-21 | 2010-12-15 | Nxp股份有限公司 | Clean and hermetic sealing of a package cavity |
| US20090286382A1 (en) * | 2008-05-16 | 2009-11-19 | Corporation For National Research Initiatives | Low-temperature wafer bonding of semiconductor substrates to metal substrates |
| CN102398888A (en) * | 2010-09-10 | 2012-04-04 | 台湾积体电路制造股份有限公司 | Wafer level packaging |
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Application publication date: 20151230 |