CN105186474A - Protection circuit - Google Patents

Protection circuit Download PDF

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Publication number
CN105186474A
CN105186474A CN201510432732.2A CN201510432732A CN105186474A CN 105186474 A CN105186474 A CN 105186474A CN 201510432732 A CN201510432732 A CN 201510432732A CN 105186474 A CN105186474 A CN 105186474A
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CN
China
Prior art keywords
field effect
effect transistor
resistance
grid
input signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510432732.2A
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Chinese (zh)
Inventor
仝兴孚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PUYANG LIYUAN AUTO ELECTRIC Co Ltd
Original Assignee
PUYANG LIYUAN AUTO ELECTRIC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PUYANG LIYUAN AUTO ELECTRIC Co Ltd filed Critical PUYANG LIYUAN AUTO ELECTRIC Co Ltd
Priority to CN201510432732.2A priority Critical patent/CN105186474A/en
Publication of CN105186474A publication Critical patent/CN105186474A/en
Pending legal-status Critical Current

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Abstract

The invention relates to a protection circuit. The protection circuit comprises field effect transistors; the drain of the field effect transistor Q1 and the drain of the field effect transistor Q2 are respectively connected with the input ends of a transformer T; a resistor R3 is connected between the gate and source of the field effect transistor Q1; a resistor R4 is connected between the gate and source of the field effect transistor Q2; an input signal is connected with the gate of the field effect transistor Q1 through a resistor R1; the other input signal is connected with the gate of the field effect transistor Q2 through a resistor R2; the source of the field effect transistor Q1 is connected with the source of the field effect transistor Q2 and is connected with the source or drain of the field effect transistor Q3; the drain or source of the field effect transistor Q3 is grounded; and the gate of the field effect transistor Q3 is connected with a power source end through a resistor R5. The protection circuit of the invention has the advantages of simple structure, ingenious design and stable and reliable operation.

Description

A kind of protective circuit
technical field:
The present invention relates to a kind of circuit, be specifically related to a kind of protective circuit.
background technology:
In many electronic circuits, easy powered overload impact, can cause the situation damaging other overvoltage or overcurrent; Also have power supply to connect instead, or the overcurrent that causes due to electronic circuit itself make power supply or load circuit cause damage; Also have in the circuit of some other use field effect transistor; under normal circumstances, the source electrode of field effect transistor is directly grounded, some protective circuits are inoperative to field effect transistor in such cases; and in same circuit, design these protective circuits some complexity rather simultaneously, be unfavorable for practical application.
summary of the invention:
The present invention provides a kind of multifunctional protection circuit for problems of the prior art exactly.
Technical scheme provided by the invention is:
A kind of protective circuit, comprise field effect transistor, the drain electrode of field effect transistor Q1 is connected with the input of transformer T respectively with the drain electrode of field effect transistor Q2, contact resistance R3 between the grid of field effect transistor Q1 and source electrode, contact resistance R4 between the grid of field effect transistor Q2 and source electrode, input signal connects the grid of field effect transistor Q1 by resistance R1, another input signal connects the grid of field effect transistor Q2 by resistance R2, the source electrode of field effect transistor Q1 is connected with the source electrode of field effect transistor Q2 and is connected with the source electrode of field effect transistor Q3 or drain, the drain electrode of field effect transistor Q3 or source ground, the grid of field effect transistor Q3 connects power end by resistance R5.
Concrete, the grid of described field effect transistor Q3 also connects power end by diode D, and the positive pole of diode D is connected with the grid of field effect transistor Q3.
Concrete, the grid of described field effect transistor Q3 also connects thermistor RT, the other end ground connection of thermistor RT.
Concrete, the described input signal by resistance R1 is pulse signal, is pulse signal by the input signal of resistance R2, and by the pulse input signal of resistance R1 be alternately input by the pulse input signal of resistance R2.
Structure of the present invention is simple, design concept is ingenious, circuit operates steadily reliably, in this circuit running, the source electrode of field effect transistor Q1 is connected with the source electrode of field effect transistor Q2 and is connected with the source electrode of field effect transistor Q3 or drain, and the drain electrode of field effect transistor Q3 or source ground, the advantage of this kind of connected mode is: 1 can surge current suppression, makes surge current be unlikely to excessive other components and parts that burn; 2 detect On current, to make suitable action; 3 play anti-reverse effect, during the gate turn-on positive source of field effect transistor Q3, its conducting, instead then switch on power negative pole time circuit close, be unlikely to burn out circuit; 4 overtemperature protections; the temperature produced when electric current is excessive in circuit is high; the resistance of thermistor RT changes; the voltage of the grid of field effect transistor Q3 changes; the on state resistance of field effect transistor Q3 changes; feedback quantity changes, and sends and can control trigger signal closedown, and then play many-sided protective effect to circuit according to the setting of the chip that can control trigger signal.
Accompanying drawing explanation
Fig. 1 is that the circuit of embodiment connects schematic representation intention.
Embodiment
Be illustrated in figure 1 a kind of circuit connection diagram of protective circuit, comprise field effect transistor, the drain electrode of field effect transistor Q1 is connected with the input of transformer T respectively with the drain electrode of field effect transistor Q2, contact resistance R3 between the grid of field effect transistor Q1 and source electrode, contact resistance R4 between the grid of field effect transistor Q2 and source electrode, input signal connects the grid of field effect transistor Q1 by resistance R1, another input signal connects the grid of field effect transistor Q2 by resistance R2, the source electrode of field effect transistor Q1 is connected with the source electrode of field effect transistor Q2 and is connected with the source electrode of field effect transistor Q3 or drain, the drain electrode of field effect transistor Q3 or source ground, the grid of field effect transistor Q3 connects power end by resistance R5.The grid of described field effect transistor Q3 also connects power end by diode D, and the positive pole of diode D is connected with the grid of field effect transistor Q3.The grid of described field effect transistor Q3 also connects thermistor RT, the other end ground connection of thermistor RT.
The described input signal by resistance R1 is pulse signal, is pulse signal by the input signal of resistance R2, and by the pulse input signal of resistance R1 be alternately input by the pulse input signal of resistance R2.

Claims (4)

1. a protective circuit, comprise field effect transistor, it is characterized in that, the drain electrode of field effect transistor Q1 is connected with the input of transformer T respectively with the drain electrode of field effect transistor Q2, contact resistance R3 between the grid of field effect transistor Q1 and source electrode, contact resistance R4 between the grid of field effect transistor Q2 and source electrode, input signal connects the grid of field effect transistor Q1 by resistance R1, another input signal connects the grid of field effect transistor Q2 by resistance R2, the source electrode of field effect transistor Q1 is connected with the source electrode of field effect transistor Q2 and is connected with the source electrode of field effect transistor Q3 or drain, the drain electrode of field effect transistor Q3 or source ground, the grid of field effect transistor Q3 connects power end by resistance R5.
2. protective circuit according to claim 1, is characterized in that, the grid of described field effect transistor Q3 also connects power end by diode D, and the positive pole of diode D is connected with the grid of field effect transistor Q3.
3. protective circuit according to claim 2, it is characterized in that, the grid of described field effect transistor Q3 also connects thermistor RT, the other end ground connection of thermistor RT.
4. protective circuit according to claim 1; it is characterized in that; the described input signal by resistance R1 is pulse signal, is pulse signal by the input signal of resistance R2, and by the pulse input signal of resistance R1 be alternately input by the pulse input signal of resistance R2.
CN201510432732.2A 2015-07-22 2015-07-22 Protection circuit Pending CN105186474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510432732.2A CN105186474A (en) 2015-07-22 2015-07-22 Protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510432732.2A CN105186474A (en) 2015-07-22 2015-07-22 Protection circuit

Publications (1)

Publication Number Publication Date
CN105186474A true CN105186474A (en) 2015-12-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510432732.2A Pending CN105186474A (en) 2015-07-22 2015-07-22 Protection circuit

Country Status (1)

Country Link
CN (1) CN105186474A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109327012A (en) * 2018-09-21 2019-02-12 郑州云海信息技术有限公司 A kind of the protection circuit and server of mainboard

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734828A (en) * 1987-04-27 1988-03-29 Vargo Frank J High frequency-high voltage power converter circuit
CN2442473Y (en) * 2000-08-15 2001-08-08 上海纽福克斯汽车配件有限公司 Microwave oven for car
CN102290438A (en) * 2010-04-19 2011-12-21 韩国电子通信研究院 Variable gate field-effect transistor(FET) and, electrical and electronic apparatus comprising the same fet
CN102758715A (en) * 2011-11-28 2012-10-31 余兆辉 Igniting device of transformer primary coil input oscillation current type engine and implementing method
CN104143906A (en) * 2014-07-28 2014-11-12 武汉中元通信股份有限公司 Medium-power power source module for mobile wireless communication device
CN104300825A (en) * 2014-09-30 2015-01-21 杭州电子科技大学 Sine wave inverter with switchable output voltages
CN204928109U (en) * 2015-07-22 2015-12-30 濮阳市立圆汽车电器有限公司 Protective circuit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734828A (en) * 1987-04-27 1988-03-29 Vargo Frank J High frequency-high voltage power converter circuit
CN2442473Y (en) * 2000-08-15 2001-08-08 上海纽福克斯汽车配件有限公司 Microwave oven for car
CN102290438A (en) * 2010-04-19 2011-12-21 韩国电子通信研究院 Variable gate field-effect transistor(FET) and, electrical and electronic apparatus comprising the same fet
CN102758715A (en) * 2011-11-28 2012-10-31 余兆辉 Igniting device of transformer primary coil input oscillation current type engine and implementing method
CN104143906A (en) * 2014-07-28 2014-11-12 武汉中元通信股份有限公司 Medium-power power source module for mobile wireless communication device
CN104300825A (en) * 2014-09-30 2015-01-21 杭州电子科技大学 Sine wave inverter with switchable output voltages
CN204928109U (en) * 2015-07-22 2015-12-30 濮阳市立圆汽车电器有限公司 Protective circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109327012A (en) * 2018-09-21 2019-02-12 郑州云海信息技术有限公司 A kind of the protection circuit and server of mainboard
CN109327012B (en) * 2018-09-21 2020-03-31 郑州云海信息技术有限公司 Protection circuit and server of mainboard

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Application publication date: 20151223

RJ01 Rejection of invention patent application after publication